Semiconductor memory device, method of operating a semiconductor memory device, and electronic system
By separating the vertical connection structure between the sub-word line driver and the connection pad in a three-dimensional semiconductor memory and using other sub-word line drivers to drive the word lines, the problem of voltage instability caused by threshold voltage fluctuations is solved, thereby improving the operational reliability and efficiency of the memory device.
CN122455041APending Publication Date: 2026-07-24SAMSUNG ELECTRONICS CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SAMSUNG ELECTRONICS CO LTD
- Filing Date
- 2025-08-27
- Publication Date
- 2026-07-24
AI Technical Summary
Technical Problem
In three-dimensional semiconductor memory devices, fluctuations in the threshold voltage of the sub-word line driver cause instability in the word line voltage level, affecting the normal operation of the memory cell.
Method used
By separating the sub-word line driver from the connection structure in the vertical direction of the connection pad, and using a different sub-word line driver to drive the word line, voltage level stability is ensured.
Benefits of technology
It effectively reduces the threshold voltage fluctuation of the sub-word line driver, improves the stability of the word line voltage level, and enhances the operational reliability and efficiency of the memory device.
✦ Generated by Eureka AI based on patent content.
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Figure CN122455041A_ABST
Abstract
Semiconductor memory devices, methods of operating semiconductor memory devices, and electronic systems are provided. The semiconductor memory device includes a first semiconductor die and a second semiconductor die. The second semiconductor die is stacked on the first semiconductor die in a vertical direction. The first semiconductor die includes a first connection pad, a second connection pad, a first word line, and a second word line. The first word line is electrically connected to the first connection pad. The second word line is electrically connected to the second connection pad. The second semiconductor die includes a first sub-word line driver and a second sub-word line driver. The first sub-word line driver is spaced apart from the first connection pad in the vertical direction. The second sub-word line driver is spaced apart from the second connection pad in the vertical direction and drives the first word line through the first connection pad.
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Citation Information
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