Continuous processable reaction furnace and silicon-based negative electrode material preparation equipment comprising the same

Abstract

The present application provides a continuously processable reaction furnace. The continuously processable reaction furnace includes: a reaction furnace body part, which forms a reaction space inside in a horizontal direction and is exposed to a heating temperature set outside; a reaction gas supply part, which supplies one or more kinds of reaction gas to the reaction space through one end of the reaction furnace body; a powder supply part, which is connected to the periphery of the reaction furnace body part and supplies powder to the reaction space of the reaction furnace body part; a screw part, both ends of which are rotationally supported in the reaction space and rotated by power provided from outside to continuously stir the reaction gas supplied to the reaction space and the powder to produce a reactant and move the reactant from one side to the other side of the reaction space in the axial direction; a rotating part, which rotates the screw part; and a discharge part, which is formed at the lower end of the other end side of the reaction furnace body part and discharges the moved reactant. The present application also provides a silicon-based negative electrode material preparation device.

Description

Technical Field

[0001] The present invention relates to a continuously processing reactor and a silicon-based anode material preparation apparatus including the same, and more specifically, to a continuously processing reactor and a silicon-based anode material preparation apparatus including the same that can achieve mass production and post-processing uniformity of silicon-based anode material preparation. Background Technology

[0002] Rechargeable batteries are typically an irreplaceable core component in electronic devices. However, with the increasing demand for larger capacity and lighter weight rechargeable batteries, existing technologies are no longer sufficient to meet the growing needs of electric vehicles for extended driving range and smart wearable devices for lighter weight. The core issue is the low energy density of current rechargeable batteries.

[0003] Currently, graphite-based anode materials are the most widely used anode materials for secondary batteries, with a theoretical capacity of 372 mAh / g. Existing technologies are already very close to the theoretical capacity per gram, so there is an urgent need to develop anode materials with even higher capacity per gram. Silicon anode materials, on the other hand, have been extensively studied due to their very high capacity per gram (theoretical capacity of 4200 mAh / g).

[0004] Furthermore, silicon anode materials are being considered as a new generation of anode materials due to their advantages such as low delithiation probability and abundant raw material supply.

[0005] In this process for preparing silicon-based anode materials, the materials processed are all in powder form. These powders have extremely small particle sizes (<10 μm) and high specific surface areas (>900 m²). 2 The high g / g content makes it difficult to process, so it is produced in batches.

[0006] As a result, the production volume and post-processing uniformity are low, and the yield will inevitably decrease during the process of multiple batches.

[0007] The following problems may occur when silicon-based anode materials are prepared using a batch process.

[0008] First, it reduces the productivity of batch processes. Batch processing involves processing powders one by one, thus its productivity is lower than that of continuous processes. In particular, the preparation process of silicon-based anode materials is difficult to process due to the extremely small particle size and high specific surface area, which further exacerbates the reduction in productivity of batch processes.

[0009] Secondly, it reduces the uniformity of post-processing. Batch processing involves processing powders one by one, which reduces the uniformity of post-processing steps. In particular, the post-processing steps in the preparation of silicon-based anode materials are very complex and challenging. In batch processes, such steps must be performed manually by operators one by one, making it difficult to ensure uniform quality.

[0010] Third, it reduces yield. Batch processing inevitably leads to yield reduction during multiple steps. In particular, the preparation process of silicon-based anode materials is difficult to handle due to the extremely small particle size and high specific surface area, resulting in a more significant reduction in yield.

[0011] For the reasons mentioned above, in order to solve the existing problems, it is necessary to develop technologies that can improve productivity while improving the uniformity of post-processing by converting the silicon-based anode material preparation process into a continuous process and automating the post-processing steps. Summary of the Invention

[0012] Technical issues The present invention is proposed to solve the above-mentioned problems, and the purpose of the present invention is as follows.

[0013] The purpose of this invention is to provide a continuously processing reactor and a silicon-based anode material preparation apparatus including the reactor: during the preparation of silicon-based anode materials, a rotating screw section is used to flow powder and gas, and at the same time, multiple baffles are formed at predetermined positions on the screw blades formed on the rotating shaft of the screw section. By adopting the above structure, the powder is moved uniformly while preventing the powder from sticking to the screw blades, thereby enabling continuous processing of porous carbon structures, nano-sized silicon particles CVD / CVI, and carbon deposition processes as anti-oxidation layers for silicon, and imparting uniformity to the post-processing steps.

[0014] The objectives of this invention are not limited to those mentioned above. Other objectives and advantages of the invention not mentioned can be understood through the following description, and will become more clearly understood through embodiments of the invention. Furthermore, it is understood that the objectives and advantages of the invention can be achieved through the solutions and combinations thereof shown in the claims.

[0015] Technical solution To achieve the above objectives, the present invention provides a continuously processing reactor.

[0016] The continuously processing reactor includes: a reactor body section, which is horizontally oriented and has an internal reaction space exposed to a set external heating temperature; a reaction gas supply section, which supplies one or more reaction gases to the reaction space through one end of the reactor body section; a powder supply section, which is connected to the periphery of the reactor body section and supplies powder to the reaction space of the reactor body section; a screw section, which is rotatably supported at both ends in the reaction space and is rotated by power provided from the outside, continuously stirring the reaction gas and the powder supplied to the reaction space from one side to the other along the axial direction to generate and transfer reactants; a rotating section, which rotates the screw section; and a discharge section, which is formed at the lower end of the other end of the reactor body section, to discharge the transferred reactants.

[0017] Preferably, a plurality of auxiliary gas supply units are formed at multiple intervals at multiple locations on the reactor body to supply auxiliary gas to the reaction space, and the plurality of auxiliary gas supply units are connected to the reaction gas supply unit through auxiliary gas supply pipelines.

[0018] Furthermore, preferably, the screw section includes: a rotating shaft, both ends of which are rotatably supported inside the reactor body section; and screw blades formed in a helical shape on the outer periphery of the rotating shaft. The rotating section includes a rotary motor connected to the rotating shaft in a shaft manner, which rotates the rotating shaft at a set rotational speed according to the control of the control unit.

[0019] Furthermore, preferably, one or more baffles of a predetermined shape are formed on the outer surface of the screw blades in a protruding shape.

[0020] Furthermore, preferably, the baffle is formed on at least one side of the screw blade.

[0021] Furthermore, preferably, ultrasonic generating devices are provided at multiple locations around the reactor body, and the ultrasonic generating devices transmit ultrasonic waves of a set level from around the reactor body into the interior of the reactor body under the control of the control unit.

[0022] Furthermore, preferably, a waste gas discharge section is connected around the other end of the reactor body to discharge the residual waste gas in the reaction space to the outside.

[0023] According to another embodiment, the present invention can provide a silicon-based anode material preparation apparatus, comprising a structure in which multiple of the above-mentioned continuously processable reaction furnaces are connected in sequence.

[0024] Invention Effects Through the above technical solution, the present invention has the following effects: In the process of preparing silicon-based anode materials, a rotating screw section is used to make powder and gas flow. At the same time, multiple baffles are formed on the outside of the screw blades formed on the rotating shaft of the screw section. By adopting the above structure, while moving the powder uniformly, the powder is prevented from sticking to the screw blades. Thus, it is possible to continuously process porous carbon structures, nano-sized silicon particles CVD / CVI, and carbon deposition processes as anti-oxidation layers of silicon, and impart uniformity to the post-processing steps.

[0025] The above-mentioned effects and the specific effects of the present invention will be described below while describing the specific details for carrying out the present invention. Attached Figure Description

[0026] Figure 1 A perspective view illustrating an example of the continuously processing reactor structure of the present invention.

[0027] Figure 2 To show Figure 1 A simplified diagram of the structure of the reactor.

[0028] Figure 3 A perspective view showing the structure of the screw section of the present invention.

[0029] Figure 4 A perspective view of the baffle of the present invention is shown.

[0030] Figure 5 This is a front view of a screw section with a baffle according to the present invention.

[0031] Figure 6 This is a front view of another screw section of the present invention equipped with a baffle.

[0032] Figure 7 A perspective view showing another example of the configuration of the continuously processing reactor of the present invention.

[0033] Figure 8 To show Figure 7 A simplified diagram of the structure of the reactor.

[0034] Figure 9 A diagram illustrating the process flow in a silicon-based anode material preparation apparatus including the continuously processing reactor of the present invention. Detailed Implementation

[0035] The following detailed description, with reference to the accompanying drawings, will enable those skilled in the art to implement embodiments of the present invention.

[0036] However, the present invention can be implemented in various different forms and is not limited to the embodiments described herein.

[0037] To clearly illustrate the present invention, parts unrelated to the description will be omitted, and the same reference numerals will be used for the same or similar structural elements throughout the specification.

[0038] In the following text, "the upper (or lower) part" or "the upper (or lower) part" of the substrate having or being provided with any structure means that any structure is in contact with the upper (or lower) part of the substrate to have or be provided with it.

[0039] Furthermore, it is not limited to the case where there are no other structures between the substrate and any structure provided or disposed on (or below) the substrate.

[0040] Next, the continuously processing reactor and the silicon-based anode material preparation apparatus including the present invention will be described with reference to the accompanying drawings.

[0041] First, the continuously processing reactor of the present invention will be described.

[0042] Figure 1 A perspective view illustrating an example of the continuously processing reactor structure of the present invention. Figure 2 To show Figure 1 A simplified diagram of the structure of the reactor. Figure 3 A perspective view showing the structure of the screw section of the present invention.

[0043] Reference Figures 1 to 3 The continuously processing reactor of the present invention includes a reactor body 100, a reaction gas supply unit 200, a powder supply unit 300, a screw unit 400, a rotating unit 500, and a discharge unit 60.

[0044] The reactor body 100 can be formed into a tubular shape that creates an internal reaction space. The reactor body 100 can be exposed to a heating temperature set externally by a separate heating device. The reactor body 100 of the present invention can be arranged in a horizontal direction.

[0045] The reaction gas supply unit 200 is connected to one end of the reactor body 100 to supply relevant reaction gases to the reaction space. The reaction gas supply unit 200 includes a reaction gas supply pipe 210 and a reaction gas supplier 220. The reaction gas supply pipe 210 is connected to one end of the reactor body 100. The reaction gas supplier 220 supplies reaction gases through the reaction gas supply pipe 210.

[0046] The powder supply section 300 is formed by a powder supply pipe. The powder supply pipe is connected to a predetermined position around the outer side of one end of the reactor body section 100, and supplies powder supplied from the outside to the reaction space.

[0047] The screw section 400 of the present invention is rotatably supported at both ends in the reaction space and can be rotated by power provided from the outside. It continuously stirs the reaction gas and the powder supplied to the reaction space from one side to the other along the axial direction to generate reactants and transfer them.

[0048] The screw section 400 has: a rotating shaft 410, both ends of which are rotatably supported at the center of both sides of the reaction space; and screw blades 420 formed in a helical or screw shape along the length of the rotating shaft 410.

[0049] The spacing between the screw blades 420 can be varied depending on the process.

[0050] The rotating part 500 of the present invention includes a rotary motor. The rotary motor is connected to one end of the rotating shaft 410 in a shaft manner, and the rotating shaft 410 can be rotated at a set rotational speed by the control unit 700.

[0051] Figure 4 A perspective view of the baffle of the present invention is shown. Figure 5 This is a front view of a screw section with a baffle provided in one aspect of the present invention. Figure 6 This is a front view showing another screw section of the present invention equipped with a baffle.

[0052] Reference Figures 4 to 6 The screw blade 420 of the present invention has a baffle 430 of a predetermined shape formed on the outside of the blade in a protruding shape, and one or more baffles may be provided.

[0053] The baffle 430 of the present invention can be formed on at least one side of the screw blade 410. For example, the baffle 430 can be formed on any one of the front or rear faces of the screw blade 410. Preferably, the baffle 430 can be formed on both the front and rear faces of the screw blade 410, i.e., on both faces simultaneously.

[0054] The baffle 430 can be formed as a crescent-shaped, quadrilateral, rectangular, or polygonal protrusion. Furthermore, the baffle 430 can be integrally formed on the outside of each screw blade 420. The position of the baffle 430 can also be configured to connect with the front end of the screw blade 420.

[0055] Furthermore, the baffle 430 can also be set on the outside of each screw blade 420 in one or more different positions facing different directions.

[0056] Furthermore, the discharge section 600 of the present invention is formed by a discharge pipe. The discharge pipe is formed at the lower end of the other end side of the reactor body section 100, and can discharge the transferred reactants.

[0057] Furthermore, ultrasonic generators 800 can be installed at multiple locations around the reactor body 100.

[0058] The ultrasonic generator 800 can use the ultrasonic generator module 810 to transmit ultrasonic waves at a level set by the control unit 700 from around the reactor body 100 into the interior of the reactor body 100.

[0059] Furthermore, an exhaust gas discharge section 150 for discharging residual waste gas in the reaction space can be connected around the other end of the reactor body 100. The exhaust gas discharge section 150 can be formed as an exhaust gas discharge pipe.

[0060] The reactor of the present invention can be used in continuous moving negative electrode material preparation processes with very small particle size (<10 μm) and specific surface area (>900 m²). 2 While uniformly mixing powder with a high concentration (g / g), this can be achieved by rotating the screw section 400 as described above.

[0061] In particular, the reactor of the present invention is characterized in that it is provided with a screw section 400 having rotating screw blades 420, and the screw blades 420 are formed with baffles 430 that contact the powder being moved during stirring.

[0062] That is, at least one baffle 430 of a predetermined shape is formed on the outside of each screw blade 420 where it meets the powder, so that the powder is uniformly stirred as it moves through the rotating screw part 400, thereby inducing a uniform reaction between the reactive gas and the powder.

[0063] On the other hand, the reaction time in the reaction space of the reactor of the present invention can be dynamically set in the control unit 700 by the spacing of the rotating screw blades 420 and the number of rotations of the rotating shaft 410 of the screw section 400.

[0064] Furthermore, the flow of powder in the reaction space of the reactor can proceed horizontally. As a result, the powder will deposit on the lower wall of the reaction space to form a layer. However, in this invention, multiple ultrasonic generators 800 are provided at various locations on the lower outer periphery of the reactor to continuously transmit ultrasonic waves through the lower end of the reactor, thereby solving the problem of powder deposition.

[0065] Figure 7 A perspective view showing another example of the structure of the continuously processing reactor of the present invention. Figure 8 To show Figure 7 A simplified diagram of the structure of the reactor.

[0066] Figure 7 and Figure 8 Another example of the reactor of the present invention is shown.

[0067] The reactor can be compared with a reference. Figures 1 to 6 The structures of the described reactors are substantially the same. However, multiple auxiliary gas supply sections 180 for supplying auxiliary gas to the reaction space can be formed at multiple locations spaced apart in the reactor body 100.

[0068] The plurality of auxiliary gas supply units 180 can be connected to the reaction gas supply unit 200 via auxiliary gas supply pipelines.

[0069] The auxiliary gas supply unit 180 can be an injector that injects reaction gas obtained through the auxiliary gas supply pipeline 181 into different positions in the reaction space of the reactor.

[0070] Furthermore, the auxiliary gas supply section 180 is formed around the reactor body section 100, or it can be formed neatly along the length of the reactor body section 100, or it can be formed at different positions according to the vortex-shaped passage.

[0071] In this way, the reactive gas is simultaneously supplied to one end of the reactor and multiple locations along the powder movement path, thereby enabling the reaction between the reactive gas and the powder to proceed more effectively.

[0072] Embodiments of the present invention Figure 9 A diagram illustrating the process flow in a silicon-based anode material preparation apparatus including the continuously processing reactor of the present invention.

[0073] Reference Figure 9 The silicon-based anode material preparation equipment includes a storage tank 10, a first process section 1, a second process section 2, and a third process section 3.

[0074] The storage tank 10 stores the spherical carbon structures to be processed.

[0075] The storage tank 10 includes a device that can quantitatively load carbon structures into the first reactor 101 of the first process section 1 in a predetermined manner with a specified volume and weight, and may include a stirrer capable of suppressing bridge formation during loading.

[0076] The first reactor 101, the second reactor 102, and the third reactor 103 described later can be reactors of the present invention.

[0077] First Process Department 1 The first process section 1 of the present invention may include a first reactor 101. The first reactor 101 is a steam-activated reactor.

[0078] The first reactor 101 increases the specific surface area of ​​the spherical carbon structure to 300-2000 m². 2 / g. The first reactor 101 operates at a temperature of less than 1200°C, and a set amount of steam is continuously introduced into the reaction space of the first reactor 101.

[0079] In this process, the spherical carbon structure reacts with steam to increase its specific surface area, forming a "porous carbon structure". Moreover, the gas (Gas) (CO2, etc.) after the reaction is discharged through the exhaust gas outlet, and the porous carbon structure is discharged downward through the outlet under the action of gravity.

[0080] Second Process Section 2 The second process section 2 of the present invention may include a second reactor 102. The second reactor 102 is a Si chemical vapor deposition (CVD).

[0081] The second reactor 102 deposits / impregnates Si in a porous carbon structure.

[0082] The process operates at a temperature of 300–700°C, and reactive gases (silane, hydrogen, and inactive gases) are introduced sequentially or simultaneously according to the intended purpose. This invention enables the preparation of silicon / carbon composites (Si / C composites).

[0083] In this case, auxiliary gas supply units 180 can be cross-placed or additionally placed in the reaction space of the second reactor 102. This allows the gas concentration to be changed according to various positions within the reaction space of the second reactor 102, thereby enabling adjustment of the single / multiple layer configuration.

[0084] Third Process Department 3 The third process step 3 of the present invention may include a third reactor 103. The third reactor 103 is a carbon chemical vapor deposition (CarbonCVD) reactor.

[0085] To prevent oxidation / side reactions of the silicon / carbon composite, the third reactor 103 may use carbon to form a passivation layer.

[0086] The third reactor 103 operates at a temperature of 300-600°C and can sequentially or simultaneously introduce reaction gases (including carbon source gas, hydrogen, and inactive gas) to meet the set target.

[0087] In this invention, a reactor using a screw section is employed in the first, second, and third process sections as described above. This allows for the continuous execution of the three post-processing steps, thereby improving mass production. Unlike existing batch post-processing methods, this eliminates unnecessary movement between processes, thus minimizing material loss.

[0088] Furthermore, in this invention, the movement position of powder or material can be periodically changed by baffles formed on the outside of each screw blade, which has the advantage of improving the uniformity of post-processing.

[0089] Furthermore, the first, second, and third reactors generate ultrasonic waves at their respective bottom surfaces, which solves the problem of powder or material being lost due to being pressed against the bottom surface of the reactor's reaction space.

[0090] This invention is not limited to the specific preferred embodiments described above. Any person skilled in the art can make various modifications without departing from the spirit of the invention as claimed in the claims, and these modifications are also included within the scope of the claims.

[0091] Explanation of reference numerals in the attached figures 100: Reactor Body Section 150: Exhaust Gas Discharge Section 180: Auxiliary Gas Supply Department 181: Auxiliary gas supply pipeline 200: Reaction Gas Supply Section 210: Reaction gas supply pipe 220: Reactor gas supply unit 300: Powder Supply Department 400: Screw section 410: Rotation axis 420: Screw blade 500: Rotating part 600: Discharge section 700: Control Department 800: Ultrasonic generating device 810: Ultrasonic generating module.

Claims

1. A continuously processing reactor, characterized in that, include: The reactor body is horizontal, with an internal reaction space that is exposed to a set external heating temperature. The reaction gas supply unit supplies one or more reaction gases to the reaction space through one end of the reactor body; The powder supply unit is connected to the periphery of the reactor body and supplies powder to the reaction space of the reactor body. The screw section, with both ends rotatably supported in the reaction space, is rotated by power supplied from the outside, and continuously stirs the reaction gas and powder supplied to the reaction space from one side to the other along the axial direction to generate reactants and transfer them. The rotating part causes the screw part to rotate; and A discharge section is formed at the lower end of the other end of the reactor body to discharge the transferred reactants.

2. The continuously processing reactor according to claim 1, characterized in that, Multiple auxiliary gas supply sections are formed at intervals at multiple locations on the reactor body to supply auxiliary gas to the reaction space. The plurality of auxiliary gas supply units are connected to the reaction gas supply unit through auxiliary gas supply pipelines.

3. The continuously processing reactor according to claim 1, characterized in that, The screw section includes: The rotating shaft is rotatably supported at both ends inside the reactor body; and The screw blades are formed in a helical shape on the outer circumference of the rotating shaft. The rotating part includes a rotary motor, which is connected to the rotating shaft in a shaft manner, and rotates the rotating shaft at a set rotational speed according to the control of the control unit.

4. The continuously processing reactor according to claim 3, characterized in that, One or more baffles of a specified shape are formed on the outside of the screw blades in a protruding shape.

5. The continuously processing reactor according to claim 4, characterized in that, The baffle is formed on at least one side of the screw blade.

6. The continuously processing reactor according to claim 1, characterized in that, Ultrasonic generating devices are installed at multiple locations around the main body of the reactor. The ultrasonic generator, under the control of the control unit, transmits ultrasonic waves at a set level from around the reactor body into the interior of the reactor body.

7. The continuously processing reactor according to claim 1, characterized in that, The other end of the reactor body is connected to a waste gas discharge section to discharge the residual waste gas in the reaction space to the outside.

8. A silicon-based anode material preparation apparatus, characterized in that, The structure includes a plurality of continuously processing reactors connected in sequence according to any one of claims 1 to 7.

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