Quantum bit device
By employing a vacuum gap capacitor design in superconducting qubits, the interaction between the electric field and the dielectric substrate is reduced, the energy relaxation lifetime is improved, the problem of short lifetime of existing superconducting qubits is solved, and longer-term quantum computing and sensing are realized.
CN122460263APending Publication Date: 2026-07-24AUSTRIAN INST OF SCI & TECH
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- AUSTRIAN INST OF SCI & TECH
- Filing Date
- 2024-12-19
- Publication Date
- 2026-07-24
AI Technical Summary
Technical Problem
Existing superconducting qubit designs have short lifetimes, making it difficult to improve the energy relaxation lifetime while maintaining scalability and balancing other factors.
Method used
By employing a vacuum gap capacitor design, superconducting qubits are placed in a vacuum, reducing the interaction between the capacitor's electric field and the dielectric substrate. By adjusting the capacitor configuration and the coating method of the superconducting material, the storage ratio of the electric field in the vacuum is maximized, thereby reducing energy loss.
Benefits of technology
This significantly improves the energy relaxation lifetime of qubits, reaching over 100 µs, meeting the needs of long-term quantum computing and sensing.
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Figure CN122460263A_ABST
Abstract
A superconducting qubit including a capacitor and a Josephson junction connected to the capacitor is provided. The capacitor includes two opposing surfaces coated with a superconducting material. When the superconducting qubit is placed in a vacuum, a region between the opposing surfaces is evacuated. The configuration of the capacitor is such that an energy relaxation lifetime of the qubit is at least 100 µs. The capacitor can include two electrode structures including a dielectric material coated with a superconducting material, each opposing surface being provided by a respective electrode structure. Three mutually perpendicular lines can be drawn through the dielectric material, each line intersecting the superconducting material on two opposite sides of the electrode structure.
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