Self-rectifying memristor and method of manufacturing the same

Abstract

This application belongs to the field of microelectronic devices, specifically disclosing a self-rectified memristor and its fabrication method. This application employs multi-element synergistic ion implantation into the functional layer. Rare gas ions introduce pure vacancy defects to regulate the interface barrier between the first electrode and the functional layer, forming a barrier difference and achieving a self-rectification effect. Non-metallic elements, acting as interstitial atoms or substitutional impurities, convert some vacancy defects into first composite defects. By changing the charge distribution, the energy level of the comprehensive defect at the interface between the first electrode and the functional layer is regulated to achieve the Poul-Frenkel electron emission mechanism. Metallic elements, acting as substitutional impurities, convert some comprehensive defects into second composite defects. By changing the bonding valence state, the concentration of the comprehensive defect at the interface between the first electrode and the functional layer is regulated to achieve resistive switching stability. This allows for precise control of the defect concentration and energy level, resulting in a fixed site that does not frequently move, thus preventing leakage current and improving its fatigue resistance and consistency.

Description

Technical Field

[0001] This application belongs to the field of microelectronic devices, and more specifically, relates to a self-rectified memristor and its fabrication method. Background Technology

[0002] A self-rectified memristor is a two-terminal electronic device whose resistance state can be reversibly modulated by the applied voltage / current. Its current-voltage characteristic curve exhibits inherent asymmetry, meaning it shows significantly different conduction behaviors under different polarity voltages, thereby spontaneously suppressing reverse leakage current and combining information storage and rectification functions.

[0003] Existing self-rectified memristors typically require complex fabrication methods to precisely control the interfacial barrier and defect concentration with the electrodes. For example, this involves adjusting the oxygen flux during magnetron sputtering to prepare multilayer films with different oxygen vacancy concentrations, adjusting defects in the functional layers through high-temperature post-annealing processes, or matching multilayer films with different band structures. This not only significantly increases the fabrication complexity of self-rectified memristors but also puts pressure on subsequent CMOS-compatible processes.

[0004] Furthermore, existing technology discloses a resistive switching memory memristor, in which the resistive switching layer includes a gas ion implantation region and a gas ion non-implanted region; the gas ion implantation region penetrates the resistive switching layer and connects to a first electrode and a second electrode; the gas ions are one or more of mono- or multi-element gas ions, such as helium ions, hydrogen ions, argon ions, carbon dioxide ions, etc. Unlike self-rectified memristors, the aforementioned resistive switching memory memristor uses gas ion implantation to generate a certain concentration of vacancies without introducing other ion doping. The introduced vacancies are used to effectively reduce the electrical initialization voltage of the memristor and improve its erase and write characteristics. However, it only forms vacancy defects and lacks sufficient control over these defects. The formed defects will penetrate the entire functional layer, and their frequent movement within the functional layer will increase the device leakage current, making it unsuitable for high-density three-dimensional integration. Summary of the Invention

[0005] In view of the shortcomings of the prior art, the purpose of this application is to provide a self-rectified memristor and its fabrication method, which aims to solve the problems of complex and difficult-to-control control methods of existing self-rectified memristors, and poor device consistency and stability caused by process differences and process complexity.

[0006] To achieve the above objectives, in a first aspect, this application provides a self-rectifying memristor, comprising a substrate, a first electrode, a second electrode, and a functional layer located between the first and second electrodes. The functional layer is implanted with at least one rare gas ion, at least one non-metallic element, and at least one metallic element. The rare gas ions introduce pure vacancy defects to modulate the interfacial barrier between the first electrode and the functional layer and form a barrier difference, thereby achieving a self-rectification effect. The non-metallic element, acting as an interstitial atom or substitutional impurity, converts some vacancy defects at the interface between the first electrode and the functional layer into first composite defects, thereby modulating the overall defect energy level at the interface between the first electrode and the functional layer by changing the charge distribution, thus achieving a Poul-Frenkel electron emission mechanism. The metallic element, acting as a substitutional impurity, converts some of the overall defects at the interface between the first electrode and the functional layer into second composite defects, thereby modulating the overall defect concentration at the interface between the first electrode and the functional layer by changing the bonding valence state, thereby achieving resistive switching stability.

[0007] Preferably, the pure vacancy defect distribution ranges from 5nm to 30nm, and the dp range at the center position is from 10nm to 15nm.

[0008] Preferably, the first composite defect has a distribution range of 5nm to 30nm, and the dp range at the center position is 10nm to 15nm.

[0009] Preferably, the vacancy defect distribution range of the second composite defect is 5nm~30nm, and the dp range of the center position is 10nm~15nm.

[0010] Preferably, the self-rectified memristor adopts a three-dimensional structure with horizontally stacked sidewalls.

[0011] To achieve the above objectives, in a second aspect, this application provides a method for fabricating a self-rectified memristor, comprising: S1. Substrate preparation; S2. Alternately deposit multiple cycles of first electrode thin films and insulating layer thin films on the substrate; S3. Use photolithography to determine the preset area, then selectively etch the first electrode and insulating layer film to the substrate, and then remove the resist to obtain a structure that locally exposes the first electrode. S4. Deposit a single functional layer in the preset area where the first electrode has been exposed; S5. Using multi-element ion implantation technology, the interface barrier, defect depth and defect concentration of the functional layer are controlled. The multi-element ion implantation includes at least one rare gas ion implantation, at least one non-metallic element implantation and at least one metallic element implantation. S6. Pattern the second electrode using photolithography; S7. Deposit the second electrode, then remove the adhesive and peel off to obtain the final device.

[0012] Preferably, after rare gas ions are injected into the functional layer, the distribution range of the pure vacancy defects formed is 5nm~50nm, and the dp range of the center position is 10nm~25nm.

[0013] Preferably, after the functional layer is implanted with non-metallic elements, the distribution range of the first composite defect is 0.1nm~30nm, and the dp range at the center position is 1nm~15nm.

[0014] Preferably, after the functional layer is implanted with metal elements, the distribution range of the second composite defect is 5nm~30nm, and the dp range at the center position is 10nm~15nm.

[0015] Preferably, the concentration of defects is controlled by adjusting the injection dose, wherein the injection dose of rare gas ions is 10 13 ions / cm 2 ~10 17 ions / cm 2 Between; the injection dose of non-metallic elements is between 10 13 ions / cm 2 ~10 15 ions / cm 2 Between; the injection dose of metal elements is between 10 13 ions / cm 2 ~10 14 ions / cm 2 Between; by controlling the injection energy, the position, size, and distribution range of defects in the functional layer are regulated. Among them, the injection energy of rare gas ions is between 15keV and 50keV, the injection energy of non-metallic elements is between 5keV and 35keV, and the injection energy of metallic elements is between 5keV and 35keV.

[0016] Overall, the technical solutions conceived in this application have the following beneficial effects compared with the prior art: (1) This application proposes a self-rectified memristor, which employs multi-element synergistic ion implantation into the functional layer. The rare gas ions introduce pure vacancy defects to regulate the interface barrier between the first electrode and the functional layer and form a barrier difference, thereby achieving a self-rectification effect. The non-metallic elements, acting as interstitial atoms or substitutional impurities, convert some vacancy defects at the interface between the first electrode and the functional layer into first composite defects. By changing the charge distribution, the energy level of the comprehensive defect at the interface between the first electrode and the functional layer is regulated to achieve the Poul-Frenkel electron emission mechanism. The metallic elements, acting as substitutional impurities, convert some comprehensive defects at the interface between the first electrode and the functional layer into second composite defects. By changing the bonding valence state, the concentration of the comprehensive defect at the interface between the first electrode and the functional layer is regulated to achieve resistive switching stability. This application not only enables precise control of defect concentration and energy levels, allowing for fixed-site infrequent leakage current generation, making it suitable for high-density three-dimensional integration, but also simplifies the fabrication method of the self-rectified memristor and improves its fatigue resistance and consistency.

[0017] (2) This application proposes a method for fabricating a self-rectified memristor. Compared with existing technologies, it eliminates the complex growth and bandgap matching processes of multilayer heterostructure films. Furthermore, the high CMOS process compatibility of ion implantation technology and its precise controllability over defects greatly simplify the fabrication process of the self-rectified memristor. In addition, this solution also solves the leakage current problem of memristors. By synergistically adjusting the implantation dose, energy, and angle of various element ions, the internal interface barrier, energy level depth, and defect concentration of the device can be precisely controlled to achieve stable resistive switching and rectification functions. This method can be applied to three-dimensional integration, greatly improving the integration scale of memristors. Moreover, compared with other traditional chemical and physical methods, the fabrication method provided in this application has the following two advantages: extremely high semiconductor process compatibility and simple process steps; the precise controllability, stability, and reliability of the process ensure its stability in large-scale mass production. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of a self-rectified memristor structure provided in an embodiment of this application.

[0019] Figure 2 This is a flowchart of a self-rectified memristor fabrication method provided in an embodiment of this application.

[0020] Figure 3 This is the forward bias state energy band diagram of the self-rectified memristor provided in the embodiments of this application.

[0021] Figure 4 This is the energy band diagram of the negative bias state of the self-rectified memristor provided in the embodiments of this application.

[0022] Figure 5This is a voltage-current cycle diagram obtained by DC scanning of the self-rectified memristor provided in the embodiments of this application, which is a voltage-current cycle diagram obtained by 120 cycles.

[0023] Figure 6 This is a voltage-current cycle diagram obtained by DC scanning of the control group provided in the embodiments of this application, which is a voltage-current cycle diagram obtained by 20 cycles.

[0024] In all the figures, the same reference numerals are used to denote the same elements or structures, wherein: 101 is a substrate; 102 is a first electrode; 103 is an insulating layer; 104 is a functional layer; 105 is a pure vacancy defect; 106 is a first composite defect; 107 is a second composite defect; and 108 is a second electrode. Detailed Implementation

[0025] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0026] The embodiments of this application are described below with reference to the accompanying drawings.

[0027] like Figure 1 As shown, this application provides a self-rectifying memristor, including a substrate 101, a first electrode 102, a second electrode 108, an insulating layer 103, and a functional layer 104 located between the first and second electrodes. The functional layer 104 is implanted with at least one rare gas ion, at least one non-metallic element, and at least one metallic element. The rare gas ions introduce pure vacancy defects 105 to regulate the interface barrier between the first electrode and the functional layer and form a barrier difference, thereby achieving a self-rectification effect. The non-metallic element, as an interstitial atom or substitutional impurity, converts some vacancy defects at the interface between the first electrode and the functional layer into first composite defects 106. By changing the charge distribution, the energy level of the comprehensive defect at the interface between the first electrode and the functional layer is regulated to achieve the Poul-Frenkel electron emission mechanism. The metallic element, as a substitutional impurity, converts some comprehensive defects at the interface between the first electrode and the functional layer into second composite defects 107. By changing the bonding valence state, the concentration of comprehensive defects at the interface between the first electrode and the functional layer is regulated to achieve resistive switching stability.

[0028] It should be noted that the aforementioned multi-element ion implantation synergistically regulates defects within the functional layer. Rare gas elements, due to their chemical inertness, are less likely to bond with oxides in the medium and tend to collide with low-mass elements in the functional layer, escaping as gases to form pure defects within the functional layer. This regulates the potential barrier between the functional layer and the first electrode, creating a self-rectifying effect. Non-metallic elements, due to their chemical reactivity, smaller mass, and atomic radius, tend to bond with other elements in the functional layer, altering the local bonding environment or occupying interstitial positions to change charge distribution, further regulating the defect energy level at the interface between the functional layer and the first electrode. Metallic elements, due to their larger mass, atomic radius, and higher chemical reactivity, tend to bond with elements within the functional layer, changing the coordination environment and valence state, while simultaneously altering the defect formation energy and thus regulating the defect concentration to control the electron-trapping state of the defects. This makes it easier for electrons to be captured or released, contributing to the formation of resistive switching stability. These three influences are mutually coupled, jointly affecting the interfacial barrier between the functional layer and the electrode, as well as the depth and concentration of defect energy levels within the functional layer, enabling precise defect control. This application utilizes a multi-element synergistic injection technique to achieve self-rectified memristors with performance characteristics of no initialization, high consistency, and high durability, significantly improving device stability and greatly reducing the complexity of the fabrication process. It can be further applied to three-dimensional integration, greatly increasing the integration scale of memristors.

[0029] Preferably, the pure vacancy defect distribution ranges from 5nm to 30nm, and the dp range at the center position is from 10nm to 15nm.

[0030] Preferably, the first composite defect has a distribution range of 5nm to 30nm, and the dp range at the center position is 10nm to 15nm.

[0031] Preferably, the vacancy defect distribution range of the second composite defect is 5nm~30nm, and the dp range of the center position is 10nm~15nm.

[0032] Preferably, the self-rectified memristor adopts a three-dimensional structure with horizontally stacked sidewalls, which has higher integration density and demonstrates strong scalability.

[0033] In one illustrated embodiment, the substrate 101 may be one of elemental Si, SiO2, Si3N4, Si+SiO2 stack, Si+Si3N4 stack, Si+SiO2+Si3N4 stack, ITO, or a flexible substrate material.

[0034] In one illustrated embodiment, the first electrode 102 and the second electrode 108 are one of the following: Pt, Au, TiN, TaN, Pd, Ru, Ir, W, Al, Hf, Ti, Ta, V, Cr, Fe, Co, Ni, Cu, Zn, Nb, Zr, TiW, Si, and other metal compounds. The first and second electrodes can be the same material or different materials with a difference in work function. The thickness of both the first and second electrode films is 10 nanometers to 1000 nanometers. The deposition sequence of the first and second electrodes is not limited to this embodiment.

[0035] In one illustrated embodiment, the insulating layer 103 is one of silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, aluminum oxide, hafnium oxide, aluminum nitride, or other materials with high dielectric constant. The insulating layer primarily serves to protect the functional layers of the resistive switching memory and isolate adjacent device cells, preventing direct exposure of the functional layers to air and interference between devices during operation. The thickness of the insulating layer film is from 10 nanometers to 1000 nanometers. The insulating layer is deposited using one of the following methods: chemical vapor deposition, atomic layer deposition, pulsed laser deposition, or thermal oxidation.

[0036] In one illustrated embodiment, the functional layer 104 is a single-layer binary or multi-component oxide material, such as hafnium oxide, aluminum oxide, tantalum oxide, titanium oxide, tungsten oxide, zinc oxide, zirconium oxide, molybdenum oxide, copper oxide, iron oxide, magnesium oxide, lithium tantalum oxide, lithium iron oxide, lithium silicon oxide, etc. The thickness of the functional layer is 5 nm to 50 nm. The functional layer is deposited by one or two of the following methods: sputtering, atomic layer deposition, evaporation, pulsed laser deposition, thermal oxidation, and chemical vapor deposition.

[0037] In one illustrated embodiment, the defect distribution within the functional layer 104 is regulated by the energy of injected rare gas ions, non-metallic elements, and metal ions; the metal compounds within the functional layer do not exceed the highest positive valence of the metal, and the number of defects is regulated by the injection dose and the type of injected ions.

[0038] In one illustrated embodiment, the overall feature size of the self-rectified memristor is from 10 nanometers to 1000 micrometers, and the defect distribution range is less than or equal to 100 nanometers.

[0039] In one illustrated embodiment, the rare gas ions are Ar, He, and Ne, etc.

[0040] In one illustrated embodiment, the nonmetallic element is H, N, O, S, C, etc.

[0041] In one illustrated embodiment, the metallic element is Al, Ag, Cu, etc.

[0042] Figure 3This is the energy band diagram of the self-rectified memristor under forward bias provided in the embodiments of this application. After a forward bias is applied to the first electrode, due to the synergistic injection of multi-element ions into the functional layer and the formation of a high concentration of shallow energy level defects near the first electrode, the interface barrier between the functional layer and the first electrode decreases under the influence of the forward bias. Electrons cross this barrier under the action of the electric field and are conducted through the Poole-Frenkel electron emission mechanism via the shallow energy level defects to generate a large forward current. At the same time, during the conduction process, some electrons are captured by defects, causing the self-rectified device to change from a high resistance state to a low resistance state.

[0043] Figure 4 This is a band structure diagram of the self-rectified memristor under negative bias provided in this application embodiment. Under an applied negative bias, the number of defects near the second electrode is reduced due to the injection of high-energy inert elements, resulting in a larger potential barrier at the interface between the functional layer and the second electrode. Electrons have difficulty crossing this large barrier under the influence of the electric field, thus generating a smaller negative current. This allows the device to have a rectification function to solve the leakage current problem and increase the integration scale. Simultaneously, due to the bending of the energy band by the electric field, electrons trapped by defects transition through the smaller potential barrier formed with the first electrode, causing the self-rectified memristor to change from a low-resistance state to a high-resistance state.

[0044] Furthermore, the multi-element synergistic ion implantation technology provided in this application enables efficient control of the interface barrier, energy level depth, and defect concentration of self-rectified memristors. High-energy (greater than 15 keV) inert element ion implantation modulates the interface between the first electrode and the functional layer, creating a barrier difference to achieve the self-rectification effect, effectively suppressing leakage current and increasing integration scale. Non-metallic element ion implantation modulates the defect states at the interface between the first electrode and the functional layer, forming shallow-level defects and realizing the Poole-Frenkel electron emission mechanism. Metallic element ion implantation modulates the electron-trapping states of defects in the functional layer, making it easier for electrons to be trapped or released, which contributes to the formation of resistive switching stability. This technology effectively improves the problems of complex fabrication processes and defect control, poor consistency, low durability, poor resistive state retention, and low yield in traditional self-rectified devices.

[0045] like Figure 2 As shown, this application provides a method for fabricating a self-rectified memristor, comprising: S1. Substrate preparation; S2. Alternately deposit multiple cycles of first electrode thin films and insulating layer thin films on the substrate; S3. Use photolithography to determine the preset area, then selectively etch the first electrode and insulating layer film to the substrate, and then remove the resist to obtain a structure that locally exposes the first electrode. S4. Deposit a single functional layer in the preset area where the first electrode has been exposed; S5. Using multi-element ion implantation technology, the interface barrier, defect depth and defect concentration of the functional layer are controlled. The multi-element ion implantation includes at least one rare gas ion implantation, at least one non-metallic element implantation and at least one metallic element implantation. S6. Pattern the second electrode using photolithography; S7. Deposit the second electrode, then remove the adhesive and peel off to obtain the final device.

[0046] It should be noted that the injection order of rare gas ions, non-metallic elements, and metallic elements has no effect on the performance of the self-rectified memristor.

[0047] Preferably, after rare gas ions are injected into the functional layer, the distribution range of the pure vacancy defects formed is 5nm~50nm, and the dp range of the center position is 10nm~25nm.

[0048] Preferably, after the functional layer is implanted with non-metallic elements, the distribution range of the first composite defect is 0.1nm~30nm, and the dp range at the center position is 1nm~15nm.

[0049] Preferably, after the functional layer is implanted with metal elements, the distribution range of the second composite defect is 5nm~30nm, and the dp range at the center position is 10nm~15nm.

[0050] Preferably, the concentration of defects is controlled by adjusting the injection dose, wherein the injection dose of rare gas ions is 10 13 ions / cm 2 ~10 17 ions / cm 2 Between; the injection dose of non-metallic elements is between 10 13 ions / cm 2 ~10 15 ions / cm 2 Between; the injection dose of metal elements is between 10 13 ions / cm 2 ~10 14 ions / cm 2 The location, size, and distribution range of defects in the functional layer are controlled by adjusting the implantation energy. Specifically, the implantation energy for rare gas ions is between 15 keV and 50 keV, for non-metallic elements between 5 keV and 35 keV, and for metallic elements between 5 keV and 35 keV. In one illustrated embodiment, the ion implantation angle ranges from -45° to 45°, and the substrate temperature during implantation ranges from 25°C to 600°C.

[0051] Example In this embodiment, the functional layer is made of hafnium oxide, prepared by atomic layer deposition, the reaction temperature is 200–250 degrees Celsius, the purge time is 1–5 seconds, and the reaction precursor is TEMA. The reaction of Hf and H2O has a deposition rate of 0.12 nm per cycle, with a total deposition of 100 cycles.

[0052] Specifically, oxygen vacancy defects within the functional layer are introduced by high-energy ion implantation of argon ions, with an ion implantation energy ranging from 15 keV to 50 keV and a dose of 1 × 10⁻⁶. 13 Up to 5×10 17 One particle per square centimeter, using an angled ion beam perpendicularly incident on the sample. The introduction of oxygen vacancy defects is achieved by controlling the implantation time, implantation dose, implantation energy, and implantation angle. Oxygen vacancies are distributed at the contact interface between the functional layer and the first electrode. The introduction of oxygen vacancy defects is used to modulate the potential barrier between the functional layer and the first electrode, forming a self-rectifying effect.

[0053] More specifically, the introduction of non-metallic elements within the functional layer is to adjust the energy level depth of oxygen vacancy defects; nitrogen is implanted, with ion implantation energies ranging from 5 keV to 35 keV and a dose of 1 × 10⁻⁶. 13 Up to 1×10 15 Particles per square centimeter were injected into the sample using an angled ion beam perpendicularly. The injection of nitrogen was used to alter the internal localized bonding environment and charge distribution to form shallow defect energy levels at the interface between the functional layer and the first electrode, and to realize the Poole-Frenkel electron emission mechanism, which is beneficial for electron conduction.

[0054] More specifically, the introduction of metal elements within the functional layer is to further regulate the concentration of oxygen vacancy defects; aluminum is implanted, with ion implantation energies ranging from 5 keV to 35 keV and a dose of 1 × 10⁻⁶. 13 Up to 1×10 14 Particles per square centimeter are injected into the sample using an angled ion beam perpendicularly. The injection of Al alters the coordination environment of elements within the functional layer, and the resulting Al-O bonds help to further control the migration of oxygen vacancies. At the same time, it changes the valence state of hafnium to modulate the defect electron trapping state of the functional layer, making it easier for electrons to be trapped or released, which helps to form resistive switching stability.

[0055] The synergistic implantation of the above three types of ions can effectively achieve the modulation of the interface barrier between the functional layer and the electrode, as well as the modulation of the defect energy level. While improving consistency, it also achieves the rectification effect, which greatly improves the integration scale of memristors.

[0056] To illustrate the practicality of this application, a control group is provided here. As a control group, the specific structure of the self-rectifying device provided by the prior art includes a substrate (SiO2 / Si), a first electrode (Ta), a functional layer (HfO2), and a second electrode (Pt); the fabrication method includes first electrode deposition, atomic layer deposition to grow the functional layer, photolithography, and second electrode deposition; the functional layer is prepared by atomic layer deposition, and its interior contains almost no defects; the reaction temperature is 200–250 degrees Celsius, the purge time is 1–5 seconds, and the reaction precursor is TEMA. The reaction of Hf and H2O has a deposition rate of 0.12 nm per cycle, with a total deposition of 100 cycles.

[0057] After the above-mentioned devices were fabricated, their electrical characteristics were tested and analyzed. For example... Figure 5 and Figure 6 As shown, I represents the values ​​of this embodiment and the control group, respectively. V-curves were obtained for 120 and 20 cycles, respectively. Comparison reveals that the device using multi-element synergistic implantation exhibits the highest rectification ratio and best inter-cycle consistency, with a more uniform distribution of high and low resistance and a larger window. This demonstrates that introducing multi-element ions into the functional layer can indeed significantly improve the overall performance of the device. The fabrication method and process shown in this embodiment can simply and efficiently fabricate self-rectifying devices and improve device consistency.

[0058] In this application, the terms "first" and "second," etc., are used to distinguish different objects, not to describe a specific order of objects. For example, "first response message" and "second response message," etc., are used to distinguish different response messages, not to describe a specific order of response messages.

[0059] In the embodiments of this application, the terms "exemplary" or "for example" are used to indicate that something is an example, illustration, or description. Any embodiment or design that is described as "exemplary" or "for example" in the embodiments of this application should not be construed as being more preferred or advantageous than other embodiments or design. Specifically, the use of the terms "exemplary" or "for example" is intended to present the relevant concepts in a specific manner.

[0060] In the description of the embodiments of this application, unless otherwise stated, "multiple" means two or more, for example, multiple processing units means two or more processing units, multiple elements means two or more elements, etc.

[0061] It should be understood that expressions such as “comprising” and “may include” used in this application indicate the existence of the disclosed functions, operations, or constituent elements, and do not limit one or more additional functions, operations, and constituent elements. In this application, terms such as “comprising” and / or “having” are to be interpreted as indicating a particular characteristic, number, operation, constituent element, component, or combination thereof, but not to exclude the existence or possibility of adding one or more other characteristics, numbers, operations, constituent elements, components, or combinations thereof.

[0062] Furthermore, in this application, the expression "and / or" includes any and all combinations of the associated listed words. For example, the expression "A and / or B" may include A, may include B, or may include both A and B.

[0063] In the description of the embodiments of this application, it should be noted that, unless otherwise explicitly specified and limited, the term "connection" should be interpreted broadly. For example, "top," "bottom," "inner," "outer," "left," "right," etc., are only directions with reference to the accompanying drawings. Therefore, the directional terms used are for better and clearer explanation and understanding of the embodiments of this application, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of this application.

[0064] Furthermore, the mathematical concepts mentioned in the embodiments of this application, such as symmetry, equality, parallelism, and perpendicularity, are limitations specific to the current technological level, rather than absolute and strict mathematical definitions. Slight deviations are permissible; approximations of symmetry, equality, parallelism, and perpendicularity are all acceptable. For example, "A and B are parallel" means that A and B are parallel or approximately parallel, and the angle between A and B can be between 0 and 10 degrees. "A and B are perpendicular" means that A and B are perpendicular or approximately perpendicular, and the angle between A and B can be between 80 and 100 degrees.

[0065] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A self-rectified memristor, comprising a substrate, a first electrode, a second electrode, and a functional layer located between the first electrode and the second electrode, characterized in that, The functional layer is implanted with at least one rare gas ion, at least one non-metallic element, and at least one metallic element. The rare gas ion introduces pure vacancy defects to modulate the interfacial barrier between the first electrode and the functional layer, forming a barrier difference and achieving a self-rectification effect. The non-metallic element, acting as an interstitial atom or substitutional impurity, converts some vacancy defects at the interface between the first electrode and the functional layer into first composite defects. By changing the charge distribution, it modulates the overall defect energy level at the interface between the first electrode and the functional layer, achieving a Poul-Frenkel electron emission mechanism. The metallic element, acting as a substitutional impurity, converts some of the overall defects at the interface between the first electrode and the functional layer into second composite defects. By changing the bonding valence state, it modulates the overall defect concentration at the interface between the first electrode and the functional layer, achieving resistive switching stability.

2. The self-rectified memristor as described in claim 1, characterized in that, The distribution range of pure vacancy defects is 5nm~30nm, and the dp range at the center is 10nm~15nm.

3. The self-rectified memristor as described in claim 1, characterized in that, The first composite defect has a distribution range of 5nm to 30nm, and the dp range at the center is 10nm to 15nm.

4. The self-rectified memristor as described in claim 1, characterized in that, The vacancy defect distribution range of the second composite defect is 5nm~30nm, and the dp range of the center position is 10nm~15nm.

5. The self-rectified memristor as described in any one of claims 1 to 4, characterized in that, The self-rectified memristor adopts a three-dimensional structure with horizontally stacked sidewalls.

6. A method for fabricating a self-rectified memristor, characterized in that, include: S1. Substrate preparation; S2. Alternately deposit multiple cycles of first electrode thin films and insulating layer thin films on the substrate; S3. Use photolithography to determine the preset area, then selectively etch the first electrode and insulating layer film to the substrate, and then remove the resist to obtain a structure that locally exposes the first electrode. S4. Deposit a single functional layer in the preset area where the first electrode has been exposed; S5. Using multi-element ion implantation technology, the interface barrier, defect depth and defect concentration of the functional layer are controlled. The multi-element ion implantation includes at least one rare gas ion implantation, at least one non-metallic element implantation and at least one metallic element implantation. S6. Pattern the second electrode using photolithography; S7. Deposit the second electrode, then remove the adhesive and peel off to obtain the final device.

7. The preparation method according to claim 6, characterized in that, After rare gas ions are injected into the functional layer, the distribution range of the resulting pure vacancy defects is 5nm~50nm, and the dp range at the center position is 10nm~25nm.

8. The preparation method according to claim 6, characterized in that, After non-metallic elements are injected into the functional layer, the first composite defect distribution ranges from 0.1 nm to 30 nm, and the dp range at the center position is from 1 nm to 15 nm.

9. The preparation method according to claim 6, characterized in that, After the functional layer is injected with metal elements, the resulting second composite defect has a distribution range of 5nm~30nm, and the dp range at the center position is 10nm~15nm.

10. The preparation method according to any one of claims 6 to 9, characterized in that, The concentration of defects is controlled by adjusting the injection dose, wherein the injection dose of rare gas ions is 10. 13 ions / cm 2 ~10 17 ions / cm 2 Between; the injection dose of non-metallic elements is between 10 13 ions / cm 2 ~10 15 ions / cm 2 Between; the injection dose of metal elements is between 10 13 ions / cm 2 ~10 14 ions / cm 2 Between; by controlling the injection energy, the position, size, and distribution range of defects in the functional layer are regulated. Among them, the injection energy of rare gas ions is between 15keV and 50keV, the injection energy of non-metallic elements is between 5keV and 35keV, and the injection energy of metallic elements is between 5keV and 35keV.

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