MEMS component and method for manufacturing a MEMS component

CN122552394APending Publication Date: 2026-08-11ROBERT BOSCH GMBH
View PDF 0 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-02-09
Publication Date
2026-08-11

AI Technical Summary

Benefits of technology

[0010] This allows for improved atomization of the regenerated layer due to spark formation caused by contact between the contact elements. Because the regenerated layer is made of a softer material than the contact elements, it is atomized more effectively during spark formation. This results in reduced or avoided wear of the contact elements through the deposition of the atomized regenerated layer on them.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN122552394A_ABST
    Figure CN122552394A_ABST
Patent Text Reader

Abstract

This invention relates to a MEMS component (100), particularly a MEMS relay, having a first component element (101) and a second component element (103), the second component element being movable relative to the first component element (101) along a contact direction (R). A first contact element (105) is constructed on the first component element (101), and a second contact element (107) is constructed on the second component element (103). The first contact element (105) is configured to protrude from a first element surface (109) of the first component element (101), and / or the second contact element (107) is configured to protrude from a second element surface (111) of the second component element (103). A regeneration layer (113) is constructed on the first element surface (109) and / or the second element surface (111), the regeneration layer (113) being configured to be atomized when sparks are formed due to contact between the first and second contact elements (105, 107). The invention also relates to a method for manufacturing the MEMS component (100).
Need to check novelty before this filing date? Find Prior Art

Description

Technical Field

[0001] This invention relates to a MEMS component and a method for manufacturing a MEMS component. Background Technology

[0002] MEMS components, especially MEMS relays, are known in the prior art. Summary of the Invention

[0003] One objective of this invention is to provide an improved MEMS component and an improved method for manufacturing the MEMS component.

[0004] This task is accomplished by the MEMS components and methods according to the present invention. Advantageous embodiments are described in the specification.

[0005] According to one aspect, a MEMS component, particularly a MEMS relay, is provided, having a first component element and a second component element movable relative to the first component element along a contact direction, wherein a first contact element is formed on the first component element and a second contact element is formed on the second component element, wherein the first contact element is configured to protrude from a first element surface of the first component element, and / or the second contact element is configured to protrude from a second element surface of the second component element, wherein a regeneration layer is formed on the first element surface and / or the second element surface, wherein the regeneration layer is configured to be atomized when sparks are formed due to contact between the first and second contact elements.

[0006] This provides the following technical advantages: an improved MEMS component, particularly an improved MEMS relay, can be provided. The MEMS component comprises two component elements that are movable relative to each other. At least one contact element is constructed on each component element. Movement of the component elements relative to each other causes contact between the contact elements and closure of the associated MEMS relay. A regeneration layer is constructed on at least one element surface of at least one component element, immediately adjacent to the corresponding contact element. Here, the regeneration layer is configured to be atomized when sparks are generated due to contact between the contact elements.

[0007] The regenerated layer is atomized and deposited onto the corresponding contact elements. This deposition of the atomized regenerated layer regenerates the contact elements and can delay or prevent wear caused by contact during the switching process of the MEMS relay. This improves the lifespan of the MEMS relay.

[0008] The atomized regenerated layer deposited on the contact element is activated during subsequent switching processes of the MEMS relay and during the associated contact element contact and the resulting heat formation, diffusing into the contact element material. This causes regeneration of the corresponding contact element and reduces or prevents wear of the contact element.

[0009] According to one embodiment, the regeneration layer is made of a material having a lower hardness than the material of the first and / or second contact elements.

[0010] This allows for improved atomization of the regenerated layer due to spark formation caused by contact between the contact elements. Because the regenerated layer is made of a softer material than the contact elements, it is atomized more effectively during spark formation. This results in reduced or avoided wear of the contact elements through the deposition of the atomized regenerated layer on them.

[0011] According to one embodiment, a first contact element is configured to protrude from a first element surface and / or a second contact element is configured to protrude from a second element surface, and each has a contact surface spaced apart from the element surface, wherein the regeneration layer has a layer thickness less than or equal to the distance between the contact surface of the corresponding contact element and the element surface of the corresponding component element.

[0012] This achieves the following technical advantages: by making the thickness of the regeneration layer smaller than the distance between the contact surface and the element surface of the contact element, a gap is created between the contact surface of the contact element and the surface of the regeneration layer. This gap ensures that, when the MEMS relay is closed and the contact element is engaged, the regeneration layer does not come into contact with another element of the corresponding component.

[0013] This allows for interference-free contact of the contact elements, and consequently, interference-free switching of the MEMS relay. By appropriately selecting the spacing between the contact surface of the contact element and the surface of the regenerated layer, optimal atomization of the regenerated layer can be achieved when sparks are generated due to contact with the contact element, and optimal deposition of the atomized regenerated layer on the contact surface of the corresponding contact element.

[0014] According to one embodiment, the regeneration layer at least partially covers the contact surface and / or side surface of the contact element.

[0015] This allows for the following technical advantages: by constructing a regeneration layer on the contact surface and / or side surface of the contact element, improved atomization of the regeneration layer upon contact with the contact element and associated improved deposition of the atomized regeneration layer on the contact element.

[0016] By performing contact between the contact elements and generating heat from the contact, the regeneration layer already constructed on the contact surface can be diffused into the material of the contact elements. This can further improve the regeneration of the contact elements.

[0017] According to one embodiment, a plurality of pin-shaped first contact elements are constructed on a first component element, wherein a planar second contact element is constructed on a second component element, wherein the planar second contact element is configured to contact the plurality of first contact elements.

[0018] This allows for the following technical advantages: improved contact of contact elements and, consequently, improved switching behavior of MEMS relays.

[0019] According to one embodiment, the first and / or second contact elements are made of materials from the following list: tungsten, tantalum, molybdenum, ruthenium, wherein the regeneration layer is made of materials from the following list: gold, silver, copper, and / or wherein the first and / or second contact elements have an extension dimension of up to 5 µm along the surface normal of the first and / or second element surface and an extension dimension of 32 µm perpendicular to the surface normal, and / or wherein the layer thickness of the regeneration layer is between 1 nm and 100 nm, and / or wherein the spacing between the contact surface of the contact element and the surface of the regeneration layer is between 10 nm and 3 µm.

[0020] This allows for the following technical advantages: by selecting the material of the contact element, a particularly hard contact element can be provided, resulting in improved contact and reduced wear of the contact element.

[0021] By appropriately selecting the material of the regenerated layer, a regenerated layer that is as soft as possible can be provided, which can be largely atomized by the spark formation at the contact element. This can lead to improved deposition of the regenerated layer on the contact element and the associated regeneration of the contact element.

[0022] By adjusting the appropriate size configuration of the contact elements and / or the regenerated layer, optimal contact of the contact elements and / or deposition of the atomized regenerated layer on the contact elements can be achieved.

[0023] According to one aspect, a method for manufacturing a MEMS component according to one of the foregoing embodiments is provided, comprising: A component element having at least one contact element is provided, wherein the component element includes a substrate and an insulating layer formed on the substrate, wherein at least one contact element is configured to protrude from a component facet defined by a surface of the insulating layer; A regenerated layer is deposited on the insulating layer, and the regenerated layer at least partially covers the surface of at least one contact element and / or the insulating layer; Remove the regenerated layer from the contact surface of the contact element; and / or The regenerated layer is removed from the insulating layer, and a gap is created between the contact surface of the contact element and the surface of the regenerated layer.

[0024] This provides an improved method for manufacturing MEMS components, offering the following technical advantages. First, a component element is provided, comprising a substrate, an insulating layer disposed on the substrate, and at least one contact element disposed on the insulating layer. Then, a regenerated layer is deposited on the surface of the insulating layer such that the regenerated layer at least partially covers the surface of the insulating layer and the corresponding contact element. Subsequently, the regenerated layer is removed, at least from the contact surface of the contact element. Finally, the thickness of the regenerated layer is reduced to establish a distance between the surface of the regenerated layer and the contact surface of the contact element. This enables the manufacturing of the MEMS component to be as simple as possible.

[0025] According to one embodiment, the component element provided includes: Provide a substrate having an insulating layer constructed on a substrate; At least one recess is etched into the insulating layer; The contact layer is deposited onto the insulating layer with recesses, and the recesses are at least partially filled by the contact layer. Remove the contact layer from the surface of the insulating layer and create a gap between the contact surface of the contact element and the surface of the insulating layer.

[0026] This allows for the realization of personalized configurations for MEMS components. To this end, in order to provide a component element and to produce at least one contact element, at least one recess is etched into an insulating layer. Subsequently, a contact layer made of the material of the contact element is applied to the surface of the insulating layer, such that the at least one recess is at least partially filled by the contact layer. The contact layer is then removed from the surface of the insulating layer. This results in a technically simple method for manufacturing contact elements.

[0027] According to one embodiment, the method further includes: Another regenerated layer is deposited onto the regenerated layer, and the contact surface of the contact element is at least partially covered by the regenerated layer; and / or The regenerated layer is structured by performing a structuring process.

[0028] This allows for the following technical advantages: by depositing another regenerated layer onto the contact surface of the contact element, it enables the coating of the contact element with the regenerated layer. This allows the regenerated layer to diffuse more effectively into the contact element during the switching process of the MEMS relay.

[0029] According to one embodiment, the insulating layer includes a first sublayer, a second sublayer, and an electrode layer constructed between the sublayers, wherein a deep recess is constructed into one of the sublayers up to the electrode layer.

[0030] This allows for the realization of a simple structure for MEMS relays, which have switchable electrodes integrated into the insulating layer for switching the switching process of the MEMS relay. Attached Figure Description

[0031] Embodiments of the present invention are described with reference to the following accompanying drawings. They illustrate: Figure 1 A schematic diagram of a MEMS component according to one embodiment; Figure 2 Another schematic diagram of a MEMS component according to one embodiment; Figure 3 Another schematic diagram of a MEMS component according to one embodiment; Figure 4 Another schematic diagram of a MEMS component according to one embodiment; and Figure 5-12 : A graphical representation of the method steps of a method for manufacturing a MEMS component according to one embodiment. Detailed Implementation

[0032] Figure 1 A schematic diagram of a MEMS component 100 according to one embodiment is shown.

[0033] According to the present invention, the MEMS component 100 includes a first component element 101 and a second component element 103. The first and second component elements 101 and 103 are movable relative to each other along the contact direction R.

[0034] On the first element surface 109, the first component element 101 includes a first contact element 105. On the second element surface 111 facing the first element surface 109, the second component element 103 includes a second contact element 107 configured opposite to the first contact element 105.

[0035] By performing a switching process, a corresponding voltage can be applied to one of the contact elements 105 and 107. The electric field generated thereby attracts the other contact element 105 and 107, and the contact between the two contact elements 105 and 107 can cause the MEMS component 100, especially the MEMS relay, to close.

[0036] According to the present invention, a regeneration layer 113 is formed on at least one of the element surfaces 109, 111 of the first and second component elements 101, 103. The regeneration layer 113 is configured to be in close proximity to the corresponding contact elements 105, 107. Here, the regeneration layer 113 is configured to be atomized by spark formation caused by the mutual contact of the two contact elements 105, 107.

[0037] Subsequently, the atomized regenerated layer is deposited on the corresponding contact elements 105 and 107 and diffuses into the material of the corresponding contact elements 105 and 107. This causes the corresponding contact elements 105 and 107 to regenerate and reduces wear or extends the service life of the contact elements 105 and 107.

[0038] According to one embodiment, the regeneration layer 113 is made of a material having a lower hardness than the material of the corresponding contact elements 105, 107.

[0039] According to one embodiment, contact elements 105, 107 are made of materials from the following list: tungsten, tantalum, molybdenum, ruthenium. The regeneration layer 113 may be made of materials from the following list: gold, silver, copper.

[0040] In the illustrated embodiment, a regeneration layer 113 is constructed on each of the two element surfaces 109 and 111 of the first and second component elements 101 and 103. Here, the regeneration layer 113 is configured on both sides of the corresponding contact elements 105 and 107 with respect to the extending direction D perpendicular to the normal direction L.

[0041] Therefore, in the illustrated embodiment, the regeneration layer 113 is configured to be located on the side of the respective contact elements 105, 107. The contact elements 105, 107 have contact surfaces 115, 117 oriented parallel to the element surfaces 109, 111, and these contact surfaces face each other. When switching the MEMS relay, contact between the two contact elements 105, 107 occurs through the contact surfaces 115, 117.

[0042] In the illustrated embodiment, contact surfaces 115 and 117 are not covered by the regeneration layer 113.

[0043] Conversely, the side 119 of the corresponding contact elements 105, 107 arranged perpendicular to the contact surfaces 115, 117 is covered by the regeneration layer 113.

[0044] In the illustrated embodiment, the first component element includes a substrate 123. An insulating layer 125 is formed on the substrate 123. In the illustrated embodiment, the insulating layer 125 has a first sublayer 135 and a second sublayer 137. A conductive electrode layer 139 is formed between the sublayers 135 and 137. In the illustrated embodiment, a contact element 105 is integrated into the second sublayer 137 and contacts the electrode layer 139, thereby causing the contact element 105 to be electrically attached to the electrode layer 139.

[0045] Therefore, by manipulating the electrode layer 139, a corresponding voltage can be applied to the first contact element 105 so as to attract the second contact element 107 of the second component element 103, and cause a corresponding switching process through the contact of the two contact elements 105 and 107.

[0046] In the illustrated embodiment, the regenerated layer 113 also has a chamfer 141. The chamfer 141 is arranged adjacent to the side surface 119 of the respective contact elements 105, 107, and causes the layer thickness d of the regenerated layer to decrease relative to the normal direction N as the spacing relative to the extension direction D increases.

[0047] Figure 2 Another schematic diagram of a MEMS component 100 according to one embodiment is shown.

[0048] The implementation shown is based on Figure 1 The embodiments described herein include all the features described therein. In the illustrated embodiment, the second contact element 107 of the second component element 104 is planar in shape and extends along the extension direction D.

[0049] Conversely, the first component element 101 includes a plurality of first contact elements 105. The first contact elements 105 are pin-shaped and spaced apart from each other along the extending direction D. Each contact element 105 is electrically contacted with the electrode layer 139, thereby causing the switchability of the MEMS relay.

[0050] The second contact element 107 of the second component element 103, which has a planar structure, is configured to simultaneously contact a plurality of first contact elements 105 of the first component element 101.

[0051] In the illustrated embodiment, all contact elements 105 and 107 are provided with a regeneration layer 113, which is configured to be adjacent to the contact elements 105 and 107 respectively relative to the extension direction D. Here, the side surfaces 119 of the contact elements 105 and 107 are at least partially covered by the regeneration layer 113.

[0052] Conversely, in the illustrated embodiment, the contact surfaces 115 and 117 of the contact elements 105 and 107 are not covered by the regeneration layer 113.

[0053] Figure 3 Another schematic diagram of a MEMS component 100 according to one embodiment is shown.

[0054] Figure 3 The implementation method is based on Figure 1 or Figure 2 The implementation method includes all the features described therein.

[0055] exist Figure 3 Only a section of the MEMS component 100 is shown in the image to improve... Figure 3 Readability.

[0056] In the illustrated embodiment, the contact elements 105 and 107 are configured such that the distance A1 between the respective contact surfaces 115 and 117 and the respective element surfaces 109 and 111 is greater than the layer thickness d of the regeneration layer 113. This results in a distance A2 between the respective contact surfaces 115 and 117 of the respective contact elements 105 and 107 and the surface 121 of the regeneration layer 113.

[0057] In the illustrated embodiment, chamfer 141 is again shown. Chamfer 141 causes the regenerated layer 113 to completely cover the side surfaces 119 of the respective contact elements 105, 107, and the layer thickness d decreases as the spacing between the contact elements 105, 107 and the extending direction D increases. Here, the layer thickness d of the regenerated layer 113 refers to the area outside chamfer 141, in which the respective regenerated layer 113 has a largely uniform layer thickness d.

[0058] According to one embodiment, contact elements 105, 107 have a height H defined relative to the normal direction N up to 5 µm.

[0059] According to one embodiment, contact elements 105, 107 have a width B of up to 32 µm relative to the extending direction D.

[0060] According to one embodiment, the regenerated layer 113 has a layer thickness d between 1 nm and 1000 nm.

[0061] According to one embodiment, the distance A2 between the contact surfaces 115, 117 of the corresponding contact elements 105, 107 and the surface 121 of the corresponding regeneration layer 113 is 10 nm to 3 µm.

[0062] Figure 4 Another schematic diagram of a MEMS component 100 according to one embodiment is shown.

[0063] The implementation shown is based on Figure 2 The implementation method in [the document / method]. Figure 4Only the first component element 101 is shown in the figure to improve readability.

[0064] In the illustrated embodiment, the regeneration layer 113 is also formed on the contact surface 115 of the illustrated contact element 105.

[0065] Furthermore, the contact surface 115 has a cut-out 143 on the side 119 immediately adjacent to the contact element 105. The cut-out 143 is configured to be nearly circular and immediately adjacent to a chamfer 141. The cut-out 143 reduces the layer thickness d immediately adjacent to the contact element 105.

[0066] Figures 5 to 12 A graphical representation of the steps of a method for manufacturing a MEMS component 100 according to one embodiment is shown.

[0067] According to the present invention, in order to manufacture the MEMS component 100 according to the above embodiments, in the first method step, a component element 101, 103 having at least one contact element 105, 107 is first provided, wherein the component element 101, 103 includes a substrate 123 and an insulating layer 125 constructed on the substrate 123, wherein the contact elements 105, 107 are configured to protrude from the element surfaces 109, 111 defined by the surface 127 of the insulating layer 125.

[0068] This is through Figures 5 to 8 The method and steps involved.

[0069] In the illustrated embodiment, in order to provide component elements 105, 107, in Figure 5 In the method steps shown, a substrate 123 having an insulating layer 125 constructed thereon is first provided.

[0070] Subsequently, at least one recess 129 is etched into the surface 127 of the insulating layer 125.

[0071] In the illustrated embodiment, the insulating layer 125 further comprises a first sublayer 135 and a second sublayer 137. An electrode layer 139 is constructed between the two sublayers 135 and 137.

[0072] In the illustrated embodiment, at least one recess 129 is introduced into the second sub-layer 137 up to the conductive electrode layer 139.

[0073] exist Figure 6 In the illustrated embodiment, a contact layer 131 is then deposited onto the surface 127 of the insulating layer 125. Here, the contact layer 131 is applied to the insulating layer 125 such that at least one recess 129 is at least partially filled by the contact layer 131.

[0074] As described above, the contact layer 131 may include tungsten, molybdenum, tantalum, or ruthenium. The deposition of the contact layer 131 may be achieved, for example, by an MOCVD process.

[0075] exist Figure 7 In the method steps shown, the contact layer 131 is removed from the insulating layer 125. Here, the contact layer 131 is completely removed from the surface 127 of the insulating layer 125, such that the contact layer 131 remains only in at least one recess 129. The removal of the contact layer can be achieved, for example, by a CMP process.

[0076] exist Figure 8 In the illustrated method steps, the insulating layer 125 is subsequently removed at least partially. Here, the thickness of the insulating layer 125 (a second sub-layer 137 in the illustrated embodiment) is reduced immediately adjacent to at least one contact element 105, such that the distance A1 between the contact surface 115 of the contact element 105 and the surface 127 of the insulating layer 125 is formed. Here, the surface 127 of the insulating layer 125 forms the element surface 109 of the illustrated component element 101. The insulating layer 125 can be removed here by a selective etching process, such as a plasma etching process containing CF4 or a wet etching process containing HF.

[0077] exist Figure 9 In the method steps shown, a regenerated layer 113 is then deposited onto the surface 127 of the insulating layer 125. Here, the regenerated layer 113 is deposited such that it at least partially covers the surface 127 of the insulating layer 125 and / or the contact element 105.

[0078] exist Figure 10 In the illustrated implementation steps, the regenerated layer 113 is partially removed. Here, in particular, the regenerated layer 113 is removed from the contact surface 115 of the illustrated contact element 105. Furthermore, in the illustrated embodiment, the layer thickness d of the regenerated layer 113 is reduced such that a distance A2 is generated between the contact surface 115 of the contact element 105 and the surface 121 of the regenerated layer 113.

[0079] In the illustrated embodiment, the regenerated layer has a nearly constant layer thickness d. The chamfer 141 shown in the embodiment above is not present. The regenerated layer 113 remains constructed onto the corresponding contact element 105 until it contacts at least one side 119 of the contact element 105.

[0080] The removal of the regenerated layer 113 can be caused, for example, by a selective etching process.

[0081] exist Figure 11 In this embodiment, an ion beam process using oblique ion incidence causes the removal of the regenerated layer 113 from at least one contact element 105. The regenerated layer 113 is removed from the contact surface 115 of the corresponding contact element 105 by oblique ion incidence.

[0082] The chamfer 141 of the regenerated layer 113 is caused by oblique ion incidence and the resulting shielding behind the contact element 105 relative to the ion beam direction. Due to the chamfer 141 caused by the shielding of the contact element 105 during the etching process, the regenerated layer 113 has the same height as the contact element 105 directly located at the contact element 105, and thus completely covers the corresponding side 119.

[0083] exist Figure 12 In the optional method steps shown, another regenerated layer 133 can be additionally formed by redeposition on the contact surface 115 of at least one contact element 105.

[0084] Figures 5 to 12 The fabrication of the first component element 101 having an electrode layer 139 is shown.

[0085] However, the method steps shown can also be applied to the manufacture of the second component element 103 of the MEMS component 100.

[0086] According to one embodiment, the coatings on the contact surfaces 115, 117 of the contact elements 105, 107 can also be produced by performing a switching process of the MEMS component 100 at the factory side, thereby causing the atomization of the regenerated layer 113 and the deposition of the regenerated layer onto the corresponding contact surfaces 115, 117 of the contact elements 105, 107.

Claims

1. A MEMS component (100), particularly a MEMS relay, having a first component element (101) and a second component element (103), the second component element being movable relative to the first component element (101) along a contact direction (R), wherein, A first contact element (105) is constructed on the first component element (101), and a second contact element (107) is constructed on the second component element (103), wherein the first contact element (105) is configured to protrude from a first element surface (109) of the first component element (101), and / or the second contact element (107) is configured to protrude from a second element surface (111) of the second component element (103), wherein a regeneration layer (113) is constructed on the first element surface (109) and / or on the second element surface (111), wherein the regeneration layer (113) is configured to be atomized when a spark is formed due to the contact between the first contact element (105) and the second contact element (107).

2. The MEMS component (100) according to claim 1, wherein, The regenerated layer (113) is made of a material having a lower hardness than the material of the first contact element (105) and / or the second contact element (107).

3. The MEMS component (100) according to claim 1 or 2, wherein, The first contact element (105) is configured to protrude from the first element surface (109) and / or the second contact element (107) is configured to protrude from the second element surface (111), and each has a contact surface (115, 117) spaced apart from the element surfaces (109, 111), wherein the regeneration layer (113) has a layer thickness (d) less than or equal to the distance (A1) between the contact surface (115, 117) of the corresponding contact element (105, 107) and the element surface (109, 111) of the corresponding component element (101, 103).

4. The MEMS component (100) according to claim 3, wherein, The regeneration layer (113) at least partially covers the contact surfaces (115, 117) and / or sides (119) of the contact elements (105, 107).

5. The MEMS component (100) according to any one of the preceding claims, wherein, A plurality of pin-shaped first contact elements (105) are constructed on the first component element (101), and a planar second contact element (107) is constructed on the second component element (103), wherein the planar second contact element (107) is configured to contact the plurality of first contact elements (105).

6. The MEMS component (100) according to any one of the preceding claims, wherein, The first contact element (105) and / or the second contact element (107) are made of one of the following materials: tungsten, tantalum, molybdenum, ruthenium, wherein the regenerated layer (113) is made of one of the following materials: gold, silver, copper, and / or wherein the first contact element (105) and / or the second contact element (107) have an extension dimension (H) of up to 5 µm along the surface normal of the first element surface (109) and / or the second element surface (111) and an extension dimension (B) of 32 µm perpendicular to the surface normal, and / or wherein the layer thickness (d) of the regenerated layer (113) is between 1 nm and 100 nm, and / or wherein the spacing (A2) between the contact surfaces (115, 117) of the contact elements (105, 107) and the surface (121) of the regenerated layer (113) is between 10 nm and 3 µm.

7. A method for manufacturing a MEMS component (100) according to any one of claims 1 to 6, comprising: A component element (101, 103) is provided having at least one contact element (105, 107), wherein the component element (101, 103) includes a substrate (123) and an insulating layer (125) disposed on the substrate (123), wherein the at least one contact element (105, 107) is configured to protrude from a component surface (109, 111) defined by a surface (127) of the insulating layer (125); A regenerated layer (113) is deposited on the insulating layer (125) and the regenerated layer (113) at least partially covers the at least one contact element (105, 107) and / or the surface (127) of the insulating layer (125). Remove the regenerated layer (113) from the contact surfaces (115, 117) of the contact elements (105, 107); and / or The regenerated layer (113) is removed from the insulating layer (125), and a gap (A2) is created between the contact surfaces (115, 117) of the contact elements (105, 107) and the surface (121) of the regenerated layer (113).

8. The method according to claim 7, wherein, The component elements (101, 103) provided include: The substrate (123) is provided having the insulating layer (125) constructed on the substrate (123). At least one recess (129) is etched into the insulating layer (125); A contact layer (131) is deposited onto the insulating layer (125) having the recesses (129) formed therein, and the recesses (129) are at least partially filled by the contact layer (131). The contact layer (131) is removed from the surface (127) of the insulating layer (125), and a gap (A1) is created between the contact surfaces (115, 117) of the contact elements (105, 107) and the surface (127) of the insulating layer (125).

9. The method according to claim 7 or 8, further comprising: Another regenerated layer (133) is deposited onto the regenerated layer (113), and the contact surfaces (115, 117) of the contact elements (105, 107) are at least partially covered by the other regenerated layer (133); and / or The regenerated layers (113, 133) are structured by performing a structuring process.

10. The method according to any one of claims 7 to 9, wherein, The insulating layer (125) includes a first sub-layer (135), a second sub-layer (137), and an electrode layer (139) constructed between the sub-layers (135, 137), wherein the deep recess (129) is constructed into one of the sub-layers (135, 137) up to the electrode layer (139).