Spraying device

Abstract

This application provides a spraying device, relating to the field of semiconductor technology, comprising: a chamber substrate having opposing first and second end faces, the chamber substrate including at least two jet chambers, each jet chamber having a jet outlet on the first end face; the at least two jet chambers including a cylindrical central jet chamber and at least one annular jet chamber arranged sequentially around the central jet chamber, with an annular isolation plate disposed between adjacent jet chambers; an air inlet assembly disposed on the second end face, the air inlet assembly communicating with the jet chambers; at least two stages of flow equalization and mixing structures, stacked between the first and second end faces, with a flow equalization plate disposed between the flow equalization and mixing structures, the flow equalization and mixing structures communicating between the air inlet assembly and the jet chambers. This application sprays process gas into different regions of the wafer in the radial direction through the jet outlets of different jet chambers, independently controlling the gas flow rate and ratio sprayed onto the wafer in the radial direction, thereby reducing the edge effect of the wafer.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a spraying device. Background Technology

[0002] Silicon carbide (SiC) wafers are third-generation wide-bandgap semiconductor materials with excellent properties such as high temperature resistance, high voltage resistance, high frequency, and low loss, and are widely used in the manufacture of power devices.

[0003] Dry etching is one of the core processes in the manufacturing of silicon carbide (SiC) wafers. It is mainly used for trench etching and mesa etching of SiC wafers. The uniformity of the etching directly determines the performance consistency and yield of power devices.

[0004] In the prior art, process gases are sprayed onto silicon carbide (SiC) wafers through a gas spray device in dry etching equipment to achieve dry etching of silicon carbide (SiC) wafers. However, the gas spray devices in existing dry etching equipment are mostly single-area structures with uniformly distributed spray holes, which cannot adjust the gas flow rate and ratio in different radial regions of the silicon carbide (SiC) wafer, and easily leads to edge effect problems of silicon carbide (SiC) wafers. Summary of the Invention

[0005] This application provides a spraying device to solve the problem that existing gas spraying devices cannot adjust the gas flow rate and ratio in different radial regions of the wafer, which easily leads to edge effects on the wafer.

[0006] To address the aforementioned technical problems, the embodiments of this application provide the following technical solutions:

[0007] This application provides a spraying device, including:

[0008] The chamber substrate has a first end face and a second end face that are opposite to each other;

[0009] The chamber base includes at least two jet chambers, each of which has a jet outlet on the first end face; wherein, the at least two jet chambers include a cylindrical central jet chamber and at least one annular jet chamber arranged sequentially around the central jet chamber, and an annular partition plate is provided between two adjacent jet chambers;

[0010] An air intake assembly is disposed on the second end face, and the air intake assembly is in communication with the jet chamber;

[0011] At least two stages of flow equalization and mixing structures are stacked between the first end face and the second end face, and flow equalization plates are provided between the flow equalization and mixing structures. The flow equalization and mixing structures are connected between the air intake assembly and the jet chamber.

[0012] In some embodiments of this application, the annular jet cavity includes a first annular jet cavity, a second annular jet cavity, and a third annular jet cavity arranged sequentially from the inside to the outside;

[0013] The width of the first annular jet chamber is greater than the radius of the central jet chamber, equal to the width of the second annular jet chamber, and less than the width of the third annular jet chamber.

[0014] In some embodiments of this application, the diameters of the air inlets of the at least two air chambers increase sequentially from the inside out;

[0015] And / or,

[0016] From the inside out, the density of the air nozzles in the at least two air chambers decreases sequentially.

[0017] In some embodiments of this application, the spraying device further includes a temperature control structure disposed on the outer wall and / or inner wall of the isolation plate.

[0018] In some embodiments of this application, the temperature control structure includes a temperature control channel spirally surrounding the isolation plate, through which a liquid temperature control medium flows.

[0019] In some embodiments of this application, the uniform flow mixing structure includes a first uniform flow mixing chamber and a second uniform flow mixing chamber stacked sequentially, with the first uniform flow mixing chamber disposed above the jet chamber.

[0020] The flow equalization plate includes a first flow equalization plate and a second flow equalization plate;

[0021] The first flow equalization plate is disposed between the first flow equalization mixing chamber and the second flow equalization mixing chamber, and the second flow equalization plate is disposed between the first flow equalization mixing chamber and the jet chamber;

[0022] Both the first flow equalization plate and the second flow equalization plate are provided with flow equalization holes that connect the first flow equalization mixing chamber and the second flow equalization mixing chamber, and connect the first flow equalization mixing chamber and the jet chamber.

[0023] In some embodiments of this application, the diameter of the flow equalization holes on the first flow equalization plate is larger than the diameter of the flow equalization holes on the second flow equalization plate;

[0024] And / or,

[0025] The density of flow equalization holes on the first flow equalization plate is less than the density of flow equalization holes on the second flow equalization plate.

[0026] In some embodiments of this application, the diameter of one end of the flow equalization orifice is larger than the diameter of the other end of the flow equalization orifice.

[0027] In some embodiments of this application, the intake assembly includes a main intake pipe and at least two branch intake pipes communicating with the main intake pipe;

[0028] Each of the branch intake pipes is connected to one of the jet chambers.

[0029] In some embodiments of this application, the air intake assembly includes at least two sets of air intake assemblies;

[0030] Each of the intake components includes a main intake pipe and at least two branch intake pipes connected to the main intake pipe.

[0031] In one of the intake assemblies, at least two branch intake pipes are connected to one of the jet chambers, and the at least two branch intake pipes are connected to different positions of the jet chamber.

[0032] The embodiments of this application have the following beneficial effects:

[0033] The spray device provided in this application includes a chamber base having a first end face and a second end face facing each other. The chamber base includes at least two jet chambers, each jet chamber having a jet port on its first end face. The at least two jet chambers include a cylindrical central jet chamber and at least one annular jet chamber arranged sequentially around the central jet chamber. An annular partition plate is provided between two adjacent jet chambers. The spray device also includes an air intake assembly disposed on the second end face and communicating with the jet chambers. The spray device further includes at least two stages of flow equalization and mixing structures, which are stacked between the first end face and the second end face. A flow equalization plate is provided between the flow equalization and mixing structures, and the flow equalization and mixing structures are connected between the air intake assembly and the jet chambers. In this embodiment, the intake assembly introduces the mixed and homogenized process gas into the jet chamber through a connected flow equalization and mixing structure. The design includes a cylindrical central jet chamber and at least two jet chambers, each consisting of at least one annular jet chamber arranged sequentially around the central jet chamber. Through the jet nozzles on the at least two jet chambers, the process gas is sprayed toward different regions in the radial direction of the wafer, thereby achieving independent control of the flow rate and ratio of the gas sprayed onto different regions in the radial direction of the wafer and reducing the edge effect of the wafer. Attached Figure Description

[0034] Figure 1 This is a schematic diagram of one of the structures of the spraying device provided in the embodiments of this application;

[0035] Figure 2 This application provides embodiments that Figure 1 The cross-sectional view shown in the AA direction;

[0036] Figure 3 This application provides embodiments that Figure 1 The cross-sectional view shown in the BB direction;

[0037] Figure 4 This is a schematic diagram showing that the jet chamber provided in the embodiment of this application has a jet port on its first end face;

[0038] Figure 5 This is a second schematic diagram of the structure of the spraying device provided in the embodiments of this application;

[0039] Figure 6 This application provides an embodiment for... Figure 5 The main view direction shown is the sectional view direction. Figure 5 The diagram shows a cross-sectional view of the spray device with CC as the cutting plane.

[0040] Figure 7 This is the third schematic diagram of the structure of the spraying device provided in the embodiments of this application;

[0041] Figure 8 This application provides an embodiment for... Figure 7 The main view direction shown is the sectional view direction, with Figure 7 The diagram shows a cross-sectional view of the spray device with CC as the cutting plane.

[0042] Figure 9 This is a schematic diagram of the structure of the first central flow equalization mixing chamber provided in an embodiment of this application;

[0043] Figure 10 This is a schematic diagram of the structure of the first annular flow equalization mixing chamber provided in an embodiment of this application;

[0044] Figure 11 This is a schematic diagram of the structure of the first central flow equalization plate provided in an embodiment of this application;

[0045] Figure 12 This diagram illustrates the structure of the first annular flow equalizer, the second annular flow equalizer, and the third annular flow equalizer provided in the embodiments of this application.

[0046] Figure 13 This is a schematic diagram of the structure of the second central flow equalization plate provided in an embodiment of this application;

[0047] Figure 14 This diagram illustrates the structure of the fourth, fifth, and sixth annular flow equalization plates provided in the embodiments of this application.

[0048] Figure 15 This is a schematic diagram illustrating one of the temperature control structures provided in the embodiments of this application;

[0049] Figure 16This is the second schematic diagram illustrating the temperature control structure provided in the embodiments of this application.

[0050] Figure 17 This is the third schematic diagram illustrating the temperature control structure provided in the embodiments of this application.

[0051] Figure 18 A schematic diagram showing the spiral-encircled isolation plate of the temperature-controlled flow channel provided in an embodiment of this application;

[0052] Figure 19 This is a flowchart illustrating the operation of the spraying device provided in the embodiments of this application.

[0053] Explanation of reference numerals in the attached figures:

[0054] 1-Cavity base; 101-First end face; 102-Second end face; 103-Central jet chamber; 104-First annular jet chamber; 105-Second annular jet chamber; 106-Third annular jet chamber; 107-Baffle plate; 108-Central jet port; 109-First jet port; 1010-Second jet port; 1011-Third jet port; 2-Intake assembly; 201-First intake pipe; 202-Second intake pipe Piping; 203-Third intake pipe; 204-Fourth intake pipe; 205-Main intake pipe; 206-First branch intake pipe; 207-Second branch intake pipe; 208-Third branch intake pipe; 209-Fourth branch intake pipe; 2010-Main intake pipe; 2011-Branch intake pipe; 301-First flow equalization mixing chamber; 3011-First central flow equalization mixing chamber; 3012-First annular flow equalization mixing chamber Flow mixing chamber; 3013-Second annular flow mixing chamber; 3014-Third annular flow mixing chamber; 302-Second flow mixing chamber; 3021-Second central flow mixing chamber; 3022-Fourth annular flow mixing chamber; 3023-Fifth annular flow mixing chamber; 3024-Sixth annular flow mixing chamber; 401-First flow equalization plate; 4011-First central flow equalization plate; 40111-First flow equalization orifice; 4012- First annular flow equalizer; 40121 - Third flow equalizer hole; 4013 - Second annular flow equalizer; 4014 - Third annular flow equalizer; 402 - Second flow equalizer; 4021 - Second central flow equalizer; 40211 - Second flow equalizer hole; 4022 - Fourth annular flow equalizer; 40221 - Fourth flow equalizer hole; 4023 - Fifth annular flow equalizer; 4024 - Sixth annular flow equalizer; 5 - Temperature control structure; 501 - Temperature control channel. Detailed Implementation

[0055] To make the technical problems, technical solutions and advantages of the embodiments of this application clearer, a detailed description will be given below in conjunction with the accompanying drawings and specific embodiments.

[0056] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this application. All other embodiments obtained by those skilled in the art based on the described embodiments of this application are within the scope of protection of this application.

[0057] To address the problem that existing gas spraying devices cannot adjust the gas flow rate and ratio in different radial regions of the wafer, which can easily lead to edge effects on the wafer, this application provides a spraying device.

[0058] Figure 1 This is a schematic diagram of the structure of the spraying device provided in the embodiments of this application, as shown below. Figure 1 As shown, this application provides a spraying device, including:

[0059] The chamber base 1 has a first end face 101 and a second end face 102 facing each other;

[0060] In this embodiment of the application, the chamber substrate 1 is a cylindrical structure, and the first end face 101 and the second end face 102 are opposite circular end faces on the cylindrical structure.

[0061] In some embodiments of this application, when the spraying device is used to spray process gas onto the wafer, the first end face 101 is the end face of the chamber substrate 1 facing the wafer, and the second end face 102 is the end face of the chamber substrate 1 away from the wafer.

[0062] In this embodiment, the wafer can be a wafer made of semiconductor materials such as silicon, silicon carbide, gallium nitride, potassium oxide, or diamond, or wafers made of other group IV semiconductor materials, binary group III-V semiconductor materials, ternary group III-V semiconductor materials, or quaternary group III-V semiconductor materials. In some embodiments, when manufacturing power semiconductor devices, the wafer can be a wide-bandgap silicon carbide wafer, such as a 2H-SiC wafer, a 4H-SiC wafer, or a 6H-SiC wafer, to improve the high voltage and high temperature resistance of the semiconductor device.

[0063] In some embodiments of this application, the first end face 101 may also be referred to as the spray surface of the chamber substrate 1.

[0064] In this embodiment of the application, the chamber base 1 includes at least two jet chambers, each jet chamber having a jet port on its first end face 101; wherein, the at least two jet chambers include a cylindrical central jet chamber and at least one annular jet chamber arranged sequentially around the central jet chamber, and an annular partition plate is provided between two adjacent jet chambers.

[0065] It is understood that in the embodiments of this application, the annular jet chamber has an annular structure.

[0066] In some embodiments of this application, two adjacent jet chambers are spaced apart, that is, two adjacent jet chambers are separated by an annular partition plate.

[0067] In some embodiments of this application, an annular baffle plate is connected to the first end face 101, and any two adjacent jet chambers are separated by the annular baffle plate.

[0068] In this embodiment of the application, by providing an annular partition plate in the chamber base 1, the chamber base 1 is divided into a central jet chamber and at least one annular jet chamber, and the annular partition plate makes the adjacent two jet chambers spaced apart.

[0069] In this embodiment, a sealing ring is provided at the connection between the isolation plate and the first end face 101.

[0070] In this embodiment of the application, a sealing ring is provided at the connection between the isolation plate and the first end face 101 to prevent the process gas contained in the jet chamber from leaking and affecting the process.

[0071] In the illustrative embodiment, the sealing ring is a fluororubber sealing ring. Fluororubber sealing rings have advantages such as high chemical stability and high temperature resistance.

[0072] In some embodiments of this application, Figure 1 The sectional view along the AA direction shown is as follows Figure 2 As shown, in Figure 1 The sectional view along the BB direction shown is as follows Figure 3 As shown.

[0073] In this embodiment, at least two jet chambers include a central jet chamber 103 and three annular jet chambers arranged sequentially around the central jet chamber 103. The three annular jet chambers respectively include a first annular jet chamber 104, a second annular jet chamber 105, and a third annular jet chamber 106 arranged sequentially around the central jet chamber 103. An annular partition plate 107 is provided between the central jet chamber 103 and the first annular jet chamber 104. Through the annular partition plate 107, the central jet chamber 103... 03 is spaced apart from the first annular jet chamber 104. An annular partition plate 107 is provided between the first annular jet chamber 104 and the second annular jet chamber 105. The first annular jet chamber 104 and the second annular jet chamber 105 are spaced apart through the annular partition plate 107. An annular partition plate 107 is provided between the second annular jet chamber 105 and the third annular jet chamber 106. The second annular jet chamber 105 and the third annular jet chamber 106 are spaced apart through the annular partition plate 107.

[0074] In some embodiments of this application, the outer surface of the third annular jet chamber 106 can also be considered as the isolation plate 107.

[0075] In some embodiments of this application, the interval between any two adjacent jet chambers is equal.

[0076] In this embodiment of the application, when at least two jet chambers include a central jet chamber 103 and a first annular jet chamber 104, a second annular jet chamber 105, and a third annular jet chamber 106 arranged sequentially around the central jet chamber 103, the interval between the central jet chamber 103 and the first annular jet chamber 104, the interval between the first annular jet chamber 104 and the second annular jet chamber 105, and the interval between the second annular jet chamber 105 and the third annular jet chamber 106 are equal.

[0077] In some other embodiments of this application, the spacing between two adjacent jet chambers gradually increases from the inside out.

[0078] In this embodiment of the application, when at least two jet chambers include a central jet chamber 103 and a first annular jet chamber 104, a second annular jet chamber 105, and a third annular jet chamber 106 arranged sequentially around the central jet chamber 103, the interval between the central jet chamber 103 and the first annular jet chamber 104 is smaller than the interval between the first annular jet chamber 104 and the second annular jet chamber 105, and the interval between the first annular jet chamber 104 and the second annular jet chamber 105 is smaller than the interval between the second annular jet chamber 105 and the third annular jet chamber 106.

[0079] In some other embodiments of this application, the interval between two adjacent jet chambers gradually decreases from the inside out.

[0080] In this embodiment of the application, when at least two jet chambers include a central jet chamber 103 and a first annular jet chamber 104, a second annular jet chamber 105, and a third annular jet chamber 106 arranged sequentially around the central jet chamber 103, the interval between the central jet chamber 103 and the first annular jet chamber 104 is greater than the interval between the first annular jet chamber 104 and the second annular jet chamber 105, and the interval between the first annular jet chamber 104 and the second annular jet chamber 105 is greater than the interval between the second annular jet chamber 105 and the third annular jet chamber 106.

[0081] In this embodiment of the application, each jet chamber has a jet port on the first end face 101, and the process gas in the jet chamber is sprayed onto the wafer through the jet port.

[0082] In this embodiment, each jet chamber has an internal accommodating space or an internal cavity structure, which is used to accommodate process gas.

[0083] In some embodiments of this application, the types of process gases sprayed into different regions of the wafer by different jet chambers can be the same or different.

[0084] In some embodiments of this application, the process gas includes at least one of the following: sulfur hexafluoride (… Argon (Ar), Chlorine ( Carbon tetrafluoride () ).

[0085] In some embodiments of this application, such as Figure 4 As shown, the central jet chamber 103 has a central jet port 108 on the first end face 101, the first annular jet chamber 104 has a first jet port 109 on the first end face 101, the second annular jet chamber 105 has a second jet port 1010 on the first end face 101, and the third annular jet chamber 106 has a third jet port 1011 on the first end face 101.

[0086] In some embodiments of this application, the cross-section of the jet nozzle can be circular, elliptical, rectangular, etc.

[0087] In some embodiments of this application, each jet chamber has jet ports arranged in an array on the first end face 101.

[0088] In some embodiments of this application, the central jet cavity 103 is opposite to the central region of the wafer, and at least one annular jet cavity corresponds to different annular regions of the wafer in the radial direction of the wafer, wherein the different annular regions of the wafer sequentially surround the central region of the wafer.

[0089] In some embodiments of this application, the center of the central jet chamber 103 coincides with the center of each annular jet chamber.

[0090] In some embodiments of this application, the central jet chamber 103 and Figure 2 , Figure 3 , Figure 4 The centers of the first annular jet chamber 104, the second annular jet chamber 105, and the third annular jet chamber 106 shown coincide.

[0091] In some embodiments of this application, in order to ensure that the process gas ejected from the jet nozzle fully sprays the wafer, in the vertical direction, the edge of the outermost annular jet cavity of at least one annular jet cavity arranged around the wafer covers the edge of the wafer in the vertical direction; or, the edge of the outermost annular jet cavity of at least one annular jet cavity arranged around the wafer coincides with the edge of the wafer; or, the distance between the edge of the outermost annular jet cavity of at least one annular jet cavity arranged around the wafer and the edge of the wafer is less than a first value, wherein the first value is a small value, such as 5% of the radius of the wafer or 10% of the radius of the wafer.

[0092] In this embodiment of the application, in order to ensure that the process gas ejected from the jet nozzle fully sprays the wafer, in the vertical direction, Figure 2 , Figure 3 , Figure 4 The edge of the third annular jet chamber 106 shown covers the edge of the wafer in the vertical direction, or... Figure 2 , Figure 3 , Figure 4 The edge of the third annular jet chamber 106 shown coincides with the edge of the wafer, or... Figure 2 , Figure 3 , Figure 4 The distance between the edge of the third annular jet chamber 106 and the edge of the wafer is less than the first value.

[0093] In some embodiments of this application, the chamber substrate 1 is made of quartz material or aluminum nitride ceramic material.

[0094] In some embodiments of this application, the surface roughness of the first end face 101 of the chamber substrate 1, the end face 102 of the second end face of the chamber substrate 1, and the side surface (or sidewall surface) of the chamber substrate is less than 0.5 μm.

[0095] In some embodiments of this application, the width of the first annular jet cavity 104 is greater than the diameter of the central jet cavity, equal to the width of the second annular jet cavity 105, and less than the width of the third annular jet cavity 106.

[0096] In an illustrative embodiment, the radius of the central jet chamber 103 is 10 mm, the radius of the first annular jet chamber 104 is greater than 10 mm and less than or equal to 15 mm, such as 12 mm, 13 mm or 14 mm, the ring width of the second annular jet chamber 105 is greater than 10 mm and less than or equal to 15 mm, such as 12 mm, 13 mm or 14 mm, and the ring width of the third annular jet chamber 106 is greater than 15 mm and less than or equal to 20 mm, such as 18 mm, 19 mm or 20 mm.

[0097] In this embodiment, by designing the annular jet chamber to gradually increase in width from the inside out, the area of ​​the wafer sprayed by the jet chamber also gradually increases from the center of the wafer to the edge, ensuring the uniformity of the process gas sprayed on the wafer surface, reducing the edge effect of the wafer, or achieving gradient compensation of the radial gas spraying amount of the wafer to suppress the edge effect.

[0098] In some embodiments of this application, when the number of at least one annular jet chambers is greater than or equal to a first number, the annular widths of some of the at least one annular jet chambers may be equal, and the annular jet chamber closest to the central jet chamber has a smaller annular width than the annular jet chamber furthest from the central jet chamber.

[0099] In the embodiments of this application, when the number of annular jet chambers is greater than or equal to a first number, the annular jet chambers can be designed to have equal annular widths, and the annular jet chamber closest to the central jet chamber can be designed to have an annular width smaller than the annular jet chamber furthest from the central jet chamber. This can also ensure the uniformity of the process gas sprayed onto the wafer surface, reduce the edge effect of the wafer, or achieve gradient compensation of the radial gas spray volume of the wafer to suppress the edge effect.

[0100] In an illustrative embodiment, the first quantity can be 4. If the number of annular jet chambers is 5, the ring widths of the 5 annular jet chambers 13 arranged sequentially from the central jet chamber outwards are 12mm, 15mm, 15mm, 18mm, and 20mm, respectively.

[0101] In some embodiments of this application, the diameters of the air inlets of the at least two air chambers increase sequentially from the inside out.

[0102] In the embodiments of this application, such as Figure 4 As shown, the diameter of the central jet port 108 on the central jet chamber 103 is smaller than the diameter of the first jet port 109 on the first annular jet chamber 104, the diameter of the first jet port 109 on the first annular jet chamber 104 is smaller than the diameter of the second jet port 1010 on the second annular jet chamber 105, and the diameter of the second jet port 1010 on the second annular jet chamber 105 is smaller than the diameter of the third jet port 1011 on the third annular jet chamber 106.

[0103] In an illustrative embodiment, the diameter of the central jet 108 is between 0.5 mm and 0.8 mm, for example, 0.6 mm; the diameter of the first jet 109 is greater than 0.8 mm and less than or equal to 1.0 mm, for example, 0.9 mm; the diameter of the second jet 1010 is greater than 1.0 mm and less than or equal to 1.2 mm, for example, 1.1 mm; and the diameter of the third jet 1011 is greater than 1.2 mm and less than or equal to 1.5 mm, for example, 1.3 mm.

[0104] In this embodiment, by designing the jet nozzles on the jet chamber to gradually increase in diameter from the inside out, the area of ​​the wafer sprayed by the jet nozzles also gradually increases from the center of the wafer to the edge, ensuring the uniformity of the process gas sprayed on the wafer surface, reducing the edge effect of the wafer, or achieving gradient compensation of the radial gas spray volume of the wafer to suppress the edge effect.

[0105] In some embodiments of this application, when the number of at least one annular jet chambers is greater than or equal to a second number, the diameter of the jet nozzles opened on some of the at least one annular jet chambers may be equal, and the diameter of the jet nozzle opened on the annular jet chamber closest to the central jet chamber is smaller than the diameter of the jet nozzle opened on the annular jet chamber furthest from the central jet chamber.

[0106] In the embodiments of this application, when the number of annular jet chambers is greater than or equal to the second number, the diameter of the jet nozzles opened on several of the annular jet chambers can be designed to be equal, and the diameter of the jet nozzle opened on the annular jet chamber closest to the central jet chamber can be ensured to be smaller than the diameter of the jet nozzle opened on the annular jet chamber farthest from the central jet chamber. This can also ensure the uniformity of the process gas sprayed on the wafer surface, reduce the edge effect of the wafer, or achieve gradient compensation of the radial gas spray volume of the wafer to suppress the edge effect.

[0107] In an illustrative embodiment, the second quantity can be 5. If the number of annular jet chambers is 5, the diameters of the jet nozzles opened on the 5 annular jet chambers arranged sequentially outward from the central jet chamber are 0.8mm, 1.0mm, 1.0mm, 1.2mm, and 1.5mm, respectively.

[0108] In some embodiments of this application, the density of the jet nozzles in at least two jet chambers decreases sequentially from the inside out.

[0109] In the embodiments of this application, such as Figure 4As shown, the density of the central jet nozzle 108 on the central jet chamber 103 is greater than the density of the first jet nozzle 109 on the first annular jet chamber 104, the density of the first jet nozzle 109 on the first annular jet chamber 104 is greater than the density of the second jet nozzle 1010 on the second annular jet chamber 105, and the density of the second jet nozzle 1010 on the second annular jet chamber 105 is greater than the density of the third jet nozzle 1011 on the third annular jet chamber 106.

[0110] In the illustrative embodiment, the density of the central jet nozzle 108 is 50 nozzles / cm³. 2 The density of the first jet nozzle 109 is 48 particles / cm³. 2 The density of the second jet nozzle 1010 is 40 particles / cm³. 2 The density of the third jet nozzle 1011 is 35 particles / cm³. 2 .

[0111] In this embodiment, by designing the density of the jet nozzles on the jet cavity to gradually increase in the direction outward from the central jet cavity 103, the efficiency of the process gas sprayed by the jet nozzles also gradually increases from the center of the wafer to the edge, ensuring the uniformity of the process gas sprayed on the wafer surface, reducing the edge effect of the wafer, or achieving gradient compensation of the radial gas spraying amount of the wafer to suppress the edge effect.

[0112] In some embodiments of this application, when the number of at least one annular jet chambers is greater than or equal to a third number, the density of jet nozzles opened on some of the at least one annular jet chambers can be equal, and the density of jet nozzles opened on the annular jet chamber closest to the central jet chamber is greater than the density of jet nozzles opened on the annular jet chamber farthest from the central jet chamber.

[0113] In the embodiments of this application, when the number of annular jet chambers is greater than or equal to a third number, the density of the jet nozzles opened on several of the annular jet chambers can be designed to be equal, and the density of the jet nozzles opened on the annular jet chamber closest to the central jet chamber 103 can be greater than the density of the jet nozzles opened on the annular jet chamber farthest from the central jet chamber 103. This can also ensure the uniformity of the process gas sprayed on the wafer surface, reduce the edge effect of the wafer, or achieve gradient compensation of the radial gas spray volume of the wafer to suppress the edge effect.

[0114] In the illustrative embodiment, the third quantity can be 4. If the number of annular jet chambers 13 is 4, the density of the jet nozzles on the 4 annular jet chambers arranged sequentially outward from the central jet chamber 103 is 45 per cm³. 2 40 pieces / cm 2 40 pieces / cm 235 pieces / cm 2 .

[0115] The spray device provided in this application embodiment includes an air intake assembly 2. In this application embodiment, the air intake assembly 2 is disposed on the second end face 102, and the air intake assembly 2 is in communication with the jet chamber.

[0116] The process gas enters the jet chamber through the air intake assembly 2.

[0117] In some embodiments of this application, the air intake assembly 2 includes at least two air intake pipes;

[0118] One of the air intake pipes 21 is connected to a jet chamber.

[0119] In this embodiment, the number of intake pipes is equal to the number of jet chambers.

[0120] In this embodiment of the application, an intake pipe is connected to a jet chamber, and process gas is independently input from the intake pipe to the jet chamber.

[0121] In this embodiment, an air inlet pipe is connected to a jet chamber, which facilitates the control of different jet chambers spraying different process gases onto different areas of the wafer.

[0122] In this embodiment of the application, an air intake pipe is connected to a jet chamber, that is, each jet chamber is connected to an independent air intake pipe, which independently controls one or more process gases to enter the corresponding jet chamber, or independently controls the flow rate and ratio of the process gas ejected from the jet chamber.

[0123] In some embodiments of this application, an intake pipe is connected to a process gas storage device, or an intake pipe is connected to a process gas storage device. The process gas storage device stores process gas, and the process gas storage device inputs the process gas into the intake pipe.

[0124] In an illustrative embodiment, Figure 5 This is another structural schematic diagram of the spraying device provided in the embodiment itself. Figure 6 Indicates Figure 5 The main view direction shown is the sectional view direction, with Figure 5 The cross-sectional view of the spray device shown, with CC as the cutting plane, is as follows: Figure 5 or Figure 6 As shown, the air intake assembly 2 includes a first air intake pipe 201 connected to the central jet chamber 103, a second air intake pipe 202 connected to the first annular jet chamber 104, a third air intake pipe 203 connected to the second annular jet chamber 105, and a fourth air intake pipe 204 connected to the third annular jet chamber 106.

[0125] In some embodiments of this application, the intake assembly 2 includes a main intake pipe and at least two branch intake pipes connected to the main intake pipe;

[0126] One of the branch intake pipes is connected to a jet chamber.

[0127] The process gas enters the branch intake pipe from the main intake pipe, and then enters the corresponding connected jet chamber from the branch intake pipe.

[0128] In this embodiment, the number of branch intake pipes is equal to the number of jet chambers.

[0129] In some embodiments of this application, the diameter of the main intake pipe is larger than the diameter of the branch intake pipe.

[0130] In some embodiments of this application, at least two branch intake pipes have the same pipe diameter.

[0131] In this embodiment of the application, each branch intake pipe is connected to a jet chamber, and process gas is independently input from one branch intake pipe to one jet chamber.

[0132] In this embodiment, air intake through the main intake pipe can improve intake efficiency, and a branch intake pipe connects to a jet chamber, making it easy to control different jet chambers to spray different process gases onto different areas of the wafer.

[0133] In this embodiment of the application, each branch intake pipe is connected to a jet chamber, that is, each jet chamber is connected to an independent branch intake pipe, which independently controls one or more process gases to enter the corresponding jet chamber, or independently controls the flow rate and ratio of the process gas ejected from the jet chamber.

[0134] In some embodiments of this application, the main intake line is connected to a process gas storage device. The process gas storage device stores process gas and inputs the process gas into the intake line.

[0135] In an illustrative embodiment, Figure 7 This is yet another structural schematic diagram of the spraying device provided in this embodiment. Figure 8 Indicates Figure 7 The main view direction shown is the sectional view direction, with Figure 7 The cross-sectional view of the spray device shown, with CC as the cutting plane, is as follows: Figure 7 or Figure 8As shown, the intake assembly 2 includes a main intake pipe 205, a first branch intake pipe 206 connected to the main intake pipe 205, a second branch intake pipe 207 connected to the main intake pipe 205, a third branch intake pipe 208 connected to the main intake pipe 205, and a fourth branch intake pipe 209 connected to the main intake pipe 205. The first branch intake pipe 206 is connected to the central jet chamber 103, the second branch intake pipe 207 is connected to the first annular jet chamber 104, the third branch intake pipe 208 is connected to the second annular jet chamber 105, and the fourth branch intake pipe 209 is connected to the third annular jet chamber 106.

[0136] In some embodiments of this application, the diameter of the main intake pipe is larger than the diameter of the branch intake pipe.

[0137] In some embodiments of this application, at least two branch intake pipes have the same pipe diameter.

[0138] In some embodiments of this application, the air intake assembly 2 includes at least two sets of air intake assemblies 2;

[0139] Each intake assembly 2 includes a main intake pipe and at least two branch intake pipes connected to the main intake pipe.

[0140] In one set of intake components 2, at least two branch intake pipes are connected to a jet chamber, and at least two branch intake pipes are connected to different positions of the jet chamber.

[0141] The process gas enters the branch intake pipe from the main intake pipe, and then enters the connected jet chamber through different positions in the branch intake pipe.

[0142] In this embodiment of the application, the number of intake components 2 is equal to the number of jet chambers.

[0143] In this embodiment of the application, an air intake assembly is connected to a jet chamber, and the air intake assembly inputs process gas into the jet chamber.

[0144] In some embodiments of this application, the diameter of the main intake pipe is larger than the diameter of the branch intake pipe.

[0145] In this embodiment, an air intake component 2 is connected to an air jet chamber, which facilitates the control of different air jet chambers spraying different process gases onto different areas of the wafer.

[0146] In some embodiments of this application, an intake assembly 2 is connected to a process gas storage device, or at least one intake assembly 2 is connected to a process gas storage device. The process gas storage device stores process gas and inputs the process gas into the intake assembly 2.

[0147] In this embodiment of the application, each set of air intake components 2 is connected to a jet chamber, that is, each jet chamber is connected to an independent set of air intake components 2, which independently controls one or more process gases to enter the corresponding jet chamber, or independently controls the flow rate and ratio of the process gas ejected from the jet chamber.

[0148] In this embodiment, the process gas enters the jet chamber at different positions through at least two branch inlet pipes of a set of inlet components, which can ensure the uniformity of the process gas entering the jet chamber.

[0149] In some embodiments of this application, the number of branch intake pipes in the intake assembly 2 that connects different jet chambers may be the same or different.

[0150] In an illustrative embodiment, the number of branch intake pipes in an intake assembly 2 can be 3, 4, 6, or 8. The more branch intake pipes there are, the more uniform the process gas entering the jet chamber.

[0151] In illustrative embodiments, such as Figure 1 and Figure 3 As shown, Figure 1 and Figure 3 The diagram schematically illustrates a set of air intake components 2, which are connected to the third annular jet chamber 106, as shown below. Figure 1 and Figure 3 As shown, an intake assembly includes a main intake pipe 2010 and three branch intake pipes 2011 connected to the main intake pipe 2010, wherein the three branch intake pipes 2011 are respectively connected to different positions of the third annular jet chamber 106.

[0152] In some embodiments of this application, an air intake component 2 is configured with a mass flow controller (MFC). Through the MFC configured in each air intake component, the flow rate and ratio of the process gas entering the air intake component 2 or the jet chamber are automatically and independently adjusted to adapt to the etching requirements of different types of wafers.

[0153] In the illustrative embodiment, the control accuracy of MFC is within ±1%.

[0154] The spray device in this application embodiment further includes: at least two stages of uniform flow mixing structure, the at least two stages of uniform flow mixing structure are stacked between the first end face 101 and the second end face 102, a uniform flow plate is provided between the uniform flow mixing structure, and the uniform flow mixing structure is connected between the air intake component 2 and the jet chamber.

[0155] In one embodiment, a process gas is fed into the jet chamber after being evenly distributed by the inlet assembly 2 through the flow equalization and mixing structure and the flow equalization plate; or, at least two process gases are mixed and evenly distributed by the inlet assembly 2 through the flow equalization and mixing structure and the flow equalization plate before entering the jet chamber.

[0156] In this embodiment, the function of the flow equalization and mixing structure and the flow equalization plate is to equalize and mix the gas input from the inlet assembly 2 before inputting it into the jet chamber, ensuring the uniformity of the process gas entering the jet chamber, and thus ensuring the uniformity of the process gas sprayed from the jet chamber onto the wafer. Specifically, when only one type of process gas is input into the inlet assembly 2, the flow equalization and mixing structure and the flow equalization plate only serve the function of flow equalization. When at least two types of process gases are input into the inlet assembly 2, the flow equalization and mixing structure and the flow equalization plate serve both flow equalization and gas mixing functions.

[0157] In this embodiment of the application, by designing at least two stages of flow equalization and gas mixing structure 3, the process gas is made to flow and mix through at least two stages of flow equalization and gas mixing structure and flow equalization plate, thereby improving the uniformity of the process gas entering the jet chamber.

[0158] In some embodiments of this application, such as Figure 1 , Figure 3 , Figure 5 , Figure 6 , Figure 7 and Figure 8 As shown, the at least two-stage flow equalization mixing structure includes a first flow equalization mixing chamber 301 and a second flow equalization mixing chamber 302 stacked sequentially, with the first flow equalization mixing chamber 301 disposed above the jet chamber.

[0159] The flow equalization plate includes a first flow equalization plate 401 and a second flow equalization plate 402; the first flow equalization plate 401 is disposed between the first flow equalization mixing chamber 301 and the second flow equalization mixing chamber 302, and the second flow equalization plate 402 is disposed between the first flow equalization mixing chamber 301 and the jet chamber.

[0160] The first flow equalization plate 401 and the second flow equalization plate 402 are each provided with flow equalization holes that connect the first flow equalization mixing chamber 301 and the second flow equalization mixing chamber 302, and connect the first flow equalization mixing chamber 301 and the jet chamber.

[0161] In this embodiment, the first flow equalization mixing chamber 301 and the second flow equalization mixing chamber 302 are connected through the flow equalization holes on the first flow equalization plate 401, and the first flow equalization mixing chamber 301 and the jet chamber are connected through the flow equalization holes on the second flow equalization plate 402. This allows the process gas entering from the air intake assembly 2 to be mixed and evenly distributed in the second flow equalization mixing chamber 302, further evenly distributed through the flow equalization holes on the first flow equalization plate 401, mixed and evenly distributed again in the first flow equalization mixing chamber 301, and then further evenly distributed through the flow equalization holes on the second flow equalization plate 402 before entering the jet chamber, ensuring the uniformity and stability of the process gas entering the jet chamber.

[0162] In some embodiments of this application, the first flow equalization mixing chamber 301 includes a cylindrical first central flow equalization mixing chamber and at least one annular flow equalization mixing chamber arranged sequentially around the first central flow equalization mixing chamber.

[0163] In this embodiment, the number of annular flow equalization mixing chambers in the first flow equalization mixing chamber 301 is equal to the number of annular jet chambers. One annular flow equalization mixing chamber corresponds to one annular jet chamber, or one annular flow equalization mixing chamber is aligned with one annular jet chamber, or one annular flow equalization mixing chamber is connected to one annular jet chamber.

[0164] In illustrative embodiments, such as Figure 3 , Figure 6 or Figure 8 As shown, the first flow equalization mixing chamber 301 includes a first central flow equalization mixing chamber 3011 aligned with the central jet chamber 103, a first annular flow equalization mixing chamber 3012 aligned with the first annular jet chamber 104, a second annular flow equalization mixing chamber 3013 aligned with the second annular jet chamber 105, and a third annular flow equalization mixing chamber 3014 aligned with the third annular jet chamber 106.

[0165] In this embodiment of the application, the first central flow equalization mixing chamber 3011 has a cylindrical cavity structure, as shown in the schematic diagram of the structure of the first central flow equalization mixing chamber 3011. Figure 9 As shown, the first annular flow equalization mixing chamber 3012, the second annular flow equalization mixing chamber 3013, and the third annular flow equalization mixing chamber 3014 have annular cavity structures. The structures of the first annular flow equalization mixing chamber 3012, the second annular flow equalization mixing chamber 3013, and the third annular flow equalization mixing chamber 3014 are basically the same, differing only in size. The structures of the first annular flow equalization mixing chamber 3012, the second annular flow equalization mixing chamber 3013, and the third annular flow equalization mixing chamber 3014 are as follows: Figure 10 As shown.

[0166] In some embodiments of this application, the second flow equalization mixing chamber 302 includes a cylindrical second central flow equalization mixing chamber and at least one annular flow equalization mixing chamber arranged sequentially around the second central flow equalization mixing chamber.

[0167] In this embodiment, the number of annular flow equalization mixing chambers in the second flow equalization mixing chamber 302 is equal to the number of annular jet chambers. One annular flow equalization mixing chamber corresponds to one annular jet chamber, or one annular flow equalization mixing chamber is aligned with one annular jet chamber, or one annular flow equalization mixing chamber is connected to one annular jet chamber.

[0168] In illustrative embodiments, such as Figure 3 , Figure 6 or Figure 8As shown, the second flow equalization mixing chamber 302 includes a second central flow equalization mixing chamber 3021 aligned with the central jet chamber, a fourth annular flow equalization mixing chamber 3022 aligned with the first annular jet chamber 104, a fifth annular flow equalization mixing chamber 3023 aligned with the second annular jet chamber 105, and a sixth annular flow equalization mixing chamber 3024 aligned with the third annular jet chamber 106.

[0169] In this embodiment, the second central flow equalization mixing chamber 3021 has a cylindrical cavity structure, and the structure of the second central flow equalization mixing chamber 3021 is also as follows. Figure 9 As shown, the second central flow equalization mixing chamber 3021 has a structure basically the same as the first central flow equalization mixing chamber 3011, with only a difference in size. The fourth annular flow equalization mixing chamber 3022, the fifth annular flow equalization mixing chamber 3023, and the sixth annular flow equalization mixing chamber 3024 have annular cavity structures. The structures of the fourth annular flow equalization mixing chamber 3022, the fifth annular flow equalization mixing chamber 3023, and the sixth annular flow equalization mixing chamber 3024 are also as shown. Figure 10 As shown, the fourth annular flow equalization mixing chamber 3022, the fifth annular flow equalization mixing chamber 3023, and the sixth annular flow equalization mixing chamber 3024 are... Figure 10 The structures of the first annular flow equalization mixing chamber 3012, the second annular flow equalization mixing chamber 3013, and the third annular flow equalization mixing chamber 3014 shown are basically the same, with only structural differences, which will not be described in detail here.

[0170] In some embodiments of this application, the first flow equalization plate 401 includes a circular first central flow equalization plate and at least one annular flow equalization plate arranged sequentially around the first central flow equalization plate.

[0171] In this embodiment, the number of annular flow equalizers in the first flow equalizer 401 is equal to the number of annular jet chambers. One annular flow equalizer corresponds to one annular jet chamber, or one annular flow equalizer is aligned with one annular jet chamber, or one annular flow equalizer is connected to one annular jet chamber.

[0172] In illustrative embodiments, such as Figure 3 , Figure 6 or Figure 8 As shown, the first flow equalization plate 401 includes a first central flow equalization plate 4011 aligned with the central jet chamber 103, a first annular flow equalization plate 4012 aligned with the first annular jet chamber 104, a second annular flow equalization plate 4013 aligned with the second annular jet chamber 105, and a third annular flow equalization plate 4014 aligned with the third annular jet chamber 106.

[0173] In this embodiment, the first central flow equalization plate 4011 has a circular structure, and a schematic diagram of the structure of the first central flow equalization plate 4011 is shown below. Figure 11As shown, the first annular flow equalization plate 4012, the second annular flow equalization plate 4013, and the third annular flow equalization plate 4014 have annular structures. The structures of the first annular flow equalization plate 4012, the second annular flow equalization plate 4013, and the third annular flow equalization plate 4014 are basically the same, differing only in size. A schematic diagram of the structure of the first annular flow equalization plate 4012, the second annular flow equalization plate 4013, and the third annular flow equalization plate 4014 is shown below. Figure 12 As shown.

[0174] In some embodiments of this application, the second flow equalization plate 402 includes a circular second central flow equalization plate and at least one annular flow equalization plate arranged sequentially around the second central flow equalization plate.

[0175] In this embodiment, the number of annular flow equalizers in the second flow equalizer 402 is equal to the number of annular jet chambers. One annular flow equalizer corresponds to one annular jet chamber, or one annular flow equalizer is aligned with one annular jet chamber, or one annular flow equalizer is connected to one annular jet chamber.

[0176] In illustrative embodiments, such as Figure 3 , Figure 6 or Figure 8 As shown, the second flow equalization plate 402 includes a second central flow equalization plate 4021 aligned with the central jet cavity, a fourth annular flow equalization plate 4022 aligned with the first annular jet cavity 104, a fifth annular flow equalization plate 4023 aligned with the second annular jet cavity 105, and a sixth annular flow equalization plate 4024 aligned with the third annular jet cavity 106.

[0177] In this embodiment, the second central flow equalization plate 4021 has a circular structure, as shown in the schematic diagram of the second central flow equalization plate 4021. Figure 13 As shown. The fourth annular flow equalization plate 4022, the fifth annular flow equalization plate 4023, and the sixth annular flow equalization plate 4024 have annular structures. Their structures are basically the same, differing only in size. A schematic diagram of the structures of the fourth annular flow equalization plate 4022, the fifth annular flow equalization plate 4023, and the sixth annular flow equalization plate 4024 is shown below. Figure 14 As shown.

[0178] In some embodiments of this application, flow equalization holes are formed in an array on the first flow equalization plate 401 and the second flow equalization plate 402.

[0179] In some embodiments of this application, the flow equalization orifice may also be referred to as the flow equalization port or through hole.

[0180] In some embodiments of this application, the diameter of the flow equalization hole on the first flow equalization plate 401 is larger than the diameter of the flow equalization hole on the second flow equalization plate 402.

[0181] In the embodiments of this application, such as Figure 11 and Figure 13 As shown, a first flow equalization hole 40111 is formed on the first central flow equalization plate 4011, and a second flow equalization hole 40211 is formed on the second central flow equalization plate 4021. The diameter of the first flow equalization hole 40111 is larger than the diameter of the second flow equalization hole 40211.

[0182] In an illustrative embodiment, the diameter of the first flow equalization orifice 40111 is 5 mm, and the diameter of the second flow equalization orifice 40211 is 2 mm.

[0183] In the embodiments of this application, such as Figure 12 and Figure 14 As shown, a third flow equalization hole 40121 is opened on the first annular flow equalization plate 4012, and a fourth flow equalization hole 40221 is opened on the fourth annular flow equalization plate 4022. The diameter of the third flow equalization hole 40121 is larger than the diameter of the fourth flow equalization hole 40221.

[0184] In an illustrative embodiment, the diameter of the third flow equalization orifice 40121 is 5 mm, and the diameter of the fourth flow equalization orifice 40221 is 2 mm.

[0185] In some embodiments of this application, the diameters of the flow equalization holes on the second annular flow equalization plate 4013 and the third annular flow equalization plate 4014 are equal to the diameters of the flow equalization holes on the first annular flow equalization plate 4012. The diameters of the flow equalization holes on the fifth annular flow equalization plate 4023 and the sixth annular flow equalization plate 4024 are equal to the diameters of the flow equalization holes on the fourth annular flow equalization plate 4022.

[0186] In this embodiment, the diameter of the flow equalization holes on the first flow equalization plate 401 is larger than the diameter of the flow equalization holes on the second flow equalization plate 402, thereby gradually improving the uniformity of the process gas transferred from the flow equalization holes of the first flow equalization plate to the flow equalization holes of the second flow equalization plate 402, ensuring the uniformity of the process gas entering the jet chamber. In some embodiments of this application, the density of the flow equalization holes on the first flow equalization plate 401 is less than the density of the flow equalization holes on the second flow equalization plate 402.

[0187] In the embodiments of this application, such as Figure 11 and Figure 13 As shown, the density of the first flow equalization holes 40111 on the first central flow equalization plate 4011 is less than the density of the second flow equalization holes 40211 on the second central flow equalization plate 4021.

[0188] In the illustrative embodiment, the density of the first flow equalization holes 40111 on the first central flow equalization plate 4011 is 5 holes / cm². 2 The density of the second flow equalization holes 40211 opened on the second central flow equalization plate 4021 is 10 holes / cm³. 2 .

[0189] In the embodiments of this application, such as Figure 12 and Figure 14 As shown, the density of the third flow equalization hole 40121 opened on the first annular flow equalization plate 4012 is less than the density of the fourth flow equalization hole 40221 opened on the fourth annular flow equalization plate 4022.

[0190] In the illustrative embodiment, the density of the first flow equalization holes 40111 on the first central flow equalization plate 4011 is 5 holes / cm³. 2 The density of the second flow equalization holes 40211 opened on the second central flow equalization plate 4021 is 10 holes / cm³. 2 .

[0191] In some embodiments of this application, the density of flow equalization holes on the second annular flow equalization plate 4013 and the third annular flow equalization plate 4014 is equal to the density of flow equalization holes on the first annular flow equalization plate 4012. The density of flow equalization holes on the fifth annular flow equalization plate 4023 and the sixth annular flow equalization plate 4024 is equal to the density of flow equalization holes on the fourth annular flow equalization plate 4022.

[0192] In this embodiment, the density of the flow equalization holes on the first flow equalization plate 401 is less than the density of the flow equalization holes on the second flow equalization plate 402, thereby gradually improving the uniformity of the process gas transmitted from the flow equalization holes of the first flow equalization plate to the flow equalization holes of the second flow equalization plate 402, and ensuring the uniformity of the process gas entering the jet chamber.

[0193] In some embodiments of this application, the height of the second flow mixing chamber is higher than the height of the first flow mixing chamber.

[0194] In an illustrative embodiment, the height of the second flow equalization mixing chamber is 12 mm, and the height of the first flow equalization mixing chamber is 6 mm.

[0195] In this embodiment, the height of the second flow equalization mixing chamber is designed to ensure concentrated air intake and the input speed of the process gas. The lower height of the first flow equalization mixing chamber ensures the uniformity of the process gas entering the jet chamber.

[0196] In some embodiments of this application, the diameter of one end of the flow equalization orifice is larger than the diameter of the other end of the flow equalization orifice.

[0197] In this embodiment of the application, the flow equalization orifice is a shrinking or gradually expanding orifice.

[0198] In some embodiments of this application, the diameter of the first end of the flow equalization orifice is larger than the diameter of the second end of the flow equalization orifice. Specifically, the first end of the flow equalization orifice is the end furthest from the jet chamber, and the second end is the end closest to the jet chamber.

[0199] In this embodiment of the application, when the flow equalization plate has a certain thickness, the flow equalization hole is a tapered hole. The design of the flow equalization hole as a tapered hole increases the flow rate of the process gas entering the jet chamber, thereby increasing the flow rate of the process gas sprayed in the jet chamber.

[0200] In some other embodiments of this application, the diameter of the first end of the flow equalization orifice is smaller than the diameter of the second end of the flow equalization orifice; wherein, the first end of the flow equalization orifice is the end of the flow equalization orifice away from the jet chamber, and the second end of the flow equalization orifice is the end of the flow equalization orifice close to the jet chamber.

[0201] In this embodiment of the application, when the flow equalization plate has a certain thickness, the flow equalization hole is a gradually expanding hole. The flow equalization hole is designed to be a gradually expanding hole to increase the uniformity of the process gas entering the jet chamber, thereby increasing the uniformity of the process gas sprayed in the jet chamber.

[0202] In the illustrative embodiment, the thickness of the flow equalization plate is 5 mm.

[0203] In some embodiments of this application, the flow equalization plate is made of quartz (or high-purity quartz), ceramic, or silicon carbide (SiC) material, which has advantages such as resistance to plasma corrosion and high temperature resistance.

[0204] In some embodiments of this application, the spraying device further includes a temperature control structure 5 disposed on the outer wall and / or the inner wall of the isolation plate 107.

[0205] In this embodiment of the application, a temperature control structure 5 is designed on the outer wall and / or inner wall of the isolation plate 107 in the spray device to control the temperature of the chamber substrate 1. By controlling the chamber substrate 1 at a certain temperature, the polymer generated by the process gas can be prevented from depositing on the surface of the chamber substrate 1, reducing particulate contamination on the surface of the chamber substrate 1, and increasing the stability of etching and wafer yield.

[0206] In the illustrative embodiment, the temperature control structure 5 controls the temperature of the chamber substrate 1 between 30°C and 60°C. By controlling the temperature of the chamber substrate 1 between 30°C and 60°C, the stability of the process gas and the service life of the chamber substrate 1 can be increased.

[0207] In one embodiment of this application, the temperature control structure 5 is disposed on the outer wall of the isolation plate 107 of the central jet chamber and the outer wall of the isolation plate 107 of each annular jet chamber.

[0208] In illustrative embodiments, such as Figure 15 As shown, the temperature control structure 5 is disposed on the outer wall of the isolation plate 107 of the central jet chamber, the outer wall of the isolation plate 107 of the first annular jet chamber 104, the outer wall of the isolation plate 107 of the second annular jet chamber 105, and the outer wall of the isolation plate 107 of the third annular jet chamber 106.

[0209] In this embodiment, the temperature control structure 5 controls the temperature of the central jet cavity and the annular jet cavities on the outer side of the central jet cavity and on the outer side of each annular jet cavity. In another embodiment, the temperature control structure 5 is disposed on the outer wall of the isolation plate 107 of the central jet cavity and the inner wall of the isolation plate 107 of each annular jet cavity.

[0210] In illustrative embodiments, such as Figure 16 As shown, the temperature control structure 5 is disposed on the outer wall of the isolation plate 107 of the central jet chamber 103, the inner wall of the isolation plate 107 of the first annular jet chamber 104, the inner wall of the isolation plate 107 of the second annular jet chamber 105, and the inner wall of the isolation plate 107 of the third annular jet chamber 106.

[0211] In this embodiment, the temperature of the central jet chamber and the annular jet chambers is controlled by the temperature control structure 5 on the outside of the central jet chamber and on the inside of each annular jet chamber.

[0212] In another embodiment of this application, the temperature control structure 5 is disposed on the outer wall of the isolation plate 107 of the central jet chamber, the outer wall of the isolation plate 107 of each annular jet chamber, and the inner wall of the isolation plate 107 of each annular jet chamber.

[0213] In illustrative embodiments, such as Figure 17 As shown, the temperature control structure 5 is disposed on the outer wall of the isolation plate 107 of the central jet chamber 103, the inner and outer walls of the isolation plate 107 of the first annular jet chamber 104, the inner and outer walls of the isolation plate 107 of the second annular jet chamber 105, and the inner and outer walls of the isolation plate 107 of the third annular jet chamber 106.

[0214] In this embodiment, the temperature control structure 5 controls the temperature of the central jet cavity and the annular jet cavities on the outside of the central jet cavity, the inside of each annular jet cavity, and the outside of each annular jet cavity, thereby improving the temperature control efficiency.

[0215] In some embodiments of this application, the temperature control structure 5 includes a temperature control channel 501 arranged in a spiral surrounding the isolation plate 107; wherein a liquid temperature control medium flows through the temperature control channel.

[0216] In this embodiment of the application, a schematic diagram of the temperature control channel 501 spirally surrounding the isolation plate 107 is shown below. Figure 18 As shown.

[0217] In this embodiment, the temperature of the chamber substrate 1 is controlled by a liquid temperature-controlling medium flowing through the temperature-controlling channel, thereby improving the temperature control efficiency.

[0218] In some embodiments of this application, the liquid temperature control medium is process cooling water (PCW) or fluorinated liquid.

[0219] In some embodiments of this application, one end of the temperature control channel is the inlet of the liquid temperature control medium, and the other end of the temperature control channel is the outlet of the liquid temperature control medium. The circulation of the liquid temperature control medium in the temperature control channel is achieved through the inlet and outlet.

[0220] In some embodiments of this application, the liquid temperature control medium flows out of the liquid outlet and enters an external medium temperature regulation system to regulate the temperature of the liquid temperature control medium.

[0221] In some embodiments of this application, a 2.5mm margin is left between the liquid inlet and the end face of the jet chamber, and a 2.5mm margin is left between the liquid outlet and the end face of the jet chamber.

[0222] In some embodiments of this application, the diameter of the temperature control channel is between 3mm and 6mm, for example, 4mm or 5mm.

[0223] In some embodiments of this application, the temperature control channel is made of stainless steel, such as 316L stainless steel, which has advantages such as corrosion resistance, high temperature resistance, and low temperature resistance.

[0224] The working process of the spray device of this application is described below with a specific embodiment, such as... Figure 19 As shown, it includes:

[0225] Step S1: Based on the etching process requirements of the SiC wafer, determine the flow rate and ratio of the process gas required for each jet chamber through the process gas control system.

[0226] There are four jet chambers: a central jet chamber and three annular jet chambers arranged sequentially around it. During the main etching stage, the central jet chamber and the first annular jet chamber eject 200 sccm of jets. 600 sccm of Ar, 300 sccm of the second and third annular jet chambers. 800 sccm of Ar, and two other annular jet chambers to compensate for the edge effect of the wafer.

[0227] Step S2: There are two flow equalization and mixing structures. The process gas enters the second flow equalization and mixing chamber through the inlet assembly. The process gas is initially flow equalized and mixed by the second flow equalization and mixing chamber and the first flow equalization plate. The process gas then enters the first flow equalization and mixing chamber. The process gas is then flow equalized and mixed again by the first flow equalization and mixing chamber and the second flow equalization plate, and the flow equalization and mixing of the process gas is gradually completed.

[0228] Step S3: The process gas after uniform mixing enters an independent jet chamber and is finally uniformly sprayed onto the SiC wafer surface through the jet nozzle for etching.

[0229] In the above process, the temperature control medium rapidly and continuously controls the temperature of the jet chamber body between 30°C and 60°C, effectively increasing the stability of the process and the service life of the spray head.

[0230] The spraying device provided in this application embodiment is suitable for high-precision process scenarios such as trench etching and mesa etching of SiC power devices.

[0231] The spraying device provided in this application embodiment is designed with at least two spaced-apart jet chambers. Jet gas is sprayed towards different regions in the radial direction of the wafer through jet nozzles on jet chambers at different locations. Furthermore, by designing an air intake assembly, which introduces homogenized process gas or at least two types of mixed and homogenized process gases into the jet chambers through a connected uniform flow mixing structure, the flow rate and proportion of the gas sprayed on different regions in the radial direction of the wafer can be independently controlled, reducing wafer edge effects. Additionally, a temperature control structure is designed to reduce particulate contamination.

[0232] The above description is the preferred embodiment of this application. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principles described in this application, and these improvements and modifications should also be considered within the scope of protection of this application.

Claims

1. A spraying device, characterized in that, include: The chamber substrate has a first end face and a second end face that are opposite to each other; The chamber base includes at least two jet chambers, each of which has a jet outlet on the first end face; wherein, the at least two jet chambers include a cylindrical central jet chamber and at least one annular jet chamber arranged sequentially around the central jet chamber, and an annular partition plate is provided between two adjacent jet chambers; An air intake assembly is disposed on the second end face, and the air intake assembly is in communication with the jet chamber; At least two stages of flow equalization and mixing structures are stacked between the first end face and the second end face, and flow equalization plates are provided between the flow equalization and mixing structures. The flow equalization and mixing structures are connected between the air intake assembly and the jet chamber.

2. The spraying device according to claim 1, characterized in that, The annular jet chamber includes a first annular jet chamber, a second annular jet chamber, and a third annular jet chamber arranged sequentially from the inside to the outside; The width of the first annular jet chamber is greater than the radius of the central jet chamber, equal to the width of the second annular jet chamber, and less than the width of the third annular jet chamber.

3. The spraying device according to claim 1 or 2, characterized in that, From the inside out, the diameter of the air inlets of the at least two air chambers increases sequentially; And / or, From the inside out, the density of the air nozzles in the at least two air chambers decreases sequentially.

4. The spraying device according to claim 1 or 2, characterized in that, The spraying device also includes a temperature control structure disposed on the outer wall and / or inner wall of the isolation plate.

5. The spraying device according to claim 4, characterized in that, The temperature control structure includes a temperature control channel spirally surrounding the isolation plate, through which a liquid temperature control medium flows.

6. The spraying device according to claim 1 or 2, characterized in that, The uniform flow mixing structure includes a first uniform flow mixing chamber and a second uniform flow mixing chamber stacked in sequence, with the first uniform flow mixing chamber disposed above the jet chamber. The flow equalization plate includes a first flow equalization plate and a second flow equalization plate; The first flow equalization plate is disposed between the first flow equalization mixing chamber and the second flow equalization mixing chamber, and the second flow equalization plate is disposed between the first flow equalization mixing chamber and the jet chamber; Both the first flow equalization plate and the second flow equalization plate are provided with flow equalization holes that connect the first flow equalization mixing chamber and the second flow equalization mixing chamber, and connect the first flow equalization mixing chamber and the jet chamber.

7. The spraying device according to claim 6, characterized in that, The diameter of the flow equalization holes on the first flow equalization plate is larger than the diameter of the flow equalization holes on the second flow equalization plate; And / or, The density of flow equalization holes on the first flow equalization plate is less than the density of flow equalization holes on the second flow equalization plate.

8. The spraying device according to claim 6, characterized in that, The diameter of one end of the flow equalization orifice is larger than the diameter of the other end of the flow equalization orifice.

9. The spraying device according to claim 1 or 2, characterized in that, The intake assembly includes a main intake pipe and at least two branch intake pipes connected to the main intake pipe; Each of the branch intake pipes is connected to one of the jet chambers.

10. The spraying device according to claim 1 or 2, characterized in that, The air intake assembly includes at least two sets of air intake assemblies; Each of the intake components includes a main intake pipe and at least two branch intake pipes connected to the main intake pipe. In one of the intake assemblies, at least two branch intake pipes are connected to one of the jet chambers, and the at least two branch intake pipes are connected to different positions of the jet chamber.

Images