Temperature-controlled plasma grid and semiconductor processing apparatus

Abstract

The present application relates to wafer processing equipment technical field, especially to a kind of temperature control type plasma grid and semiconductor processing equipment, including grid body, center cooling flow channel and edge cooling flow channel;Grid body includes center grid part and the edge grid part of annularly arranged in the outside of center grid part;Center cooling flow channel is located in center grid part and is communicated with first cooling liquid source;Edge cooling flow channel is located in edge grid part and is communicated with second cooling liquid source;The present application is directed to the problems of slow heat conduction, temperature lag, low heat dissipation efficiency caused by the passive heat dissipation of back cooling plate and air cooling of existing plasma grid, and component thermal stress damage caused by large global temperature difference, uneven deposition of grid hole by-product, plasma distribution disorder and other problems.

Description

Technical Field

[0001] This invention relates to the field of wafer processing equipment technology, and more particularly to a temperature-controlled plasma grid and semiconductor processing equipment. Background Technology

[0002] In the process scenarios of semiconductor dry plasma etching equipment, the plasma homogenization isolation gate is a core component to ensure etching quality. It is mostly made of high-temperature resistant insulating materials such as silicon carbide, alumina ceramic, and quartz ceramic, which are suitable for the working environment of 300~500℃ in the cavity. However, the existing industry temperature control technology focuses on components such as spray head and electrostatic chuck. The isolation gate has long lacked an active temperature control solution and can only be passively cooled by means of external cold plate on the back and external air cooling. This has problems such as slow heat conduction, lag in temperature regulation, and low heat dissipation efficiency. It also causes significant temperature difference between the inside and outside due to the inability to achieve precise temperature uniformity across the entire area, which in turn leads to problems such as concentrated thermal stress on components, uneven deposition of by-products in the gate holes, and disordered plasma distribution. Summary of the Invention

[0003] This invention relates to a temperature-controlled plasma grid and semiconductor processing equipment, aiming to solve the problems of existing plasma grids that lack active temperature control, rely on passive heat dissipation leading to temperature lag, large internal and external temperature differences, are easily damaged, and affect plasma distribution.

[0004] To achieve the above objectives, the present invention provides a temperature-controlled plasma grid, comprising: A grid body is disposed inside a window at the top of the reaction chamber; the grid body includes a central grid portion and an edge grid portion surrounding the outer side of the central grid portion; A central cooling channel is provided within the central grid section and is connected to the first coolant source. The central inlet of the central cooling channel is located at the center of the central grid section, and its central outlet is located near the junction of the central grid section and the edge grid section. An edge cooling channel is provided within the edge grid section and communicates with a second coolant source. The edge inlet of the edge cooling channel is located near the junction of the central grid section and the edge grid section, and its edge outlet is located near the edge of the edge grid section. A first coolant and a second coolant are injected into the central cooling channel and the edge cooling channel respectively through the first coolant source and the second coolant source, so as to independently cool and control the temperature of the central grid section and the edge grid section.

[0005] Optionally, the edge cooling channel includes several annular channels and several connecting channels. Several annular flow channels are concentrically embedded with different radii. Each connecting flow channel is used to connect two adjacent annular flow channels. The edge inlet is located inside the innermost annular flow channel and is connected to it. The edge outlet is located outside the outermost annular flow channel and is connected to it, so that the second coolant is input from the edge inlet, passes through several annular flow channels and several connecting flow channels, and is output from the edge outlet.

[0006] Optionally, the central cooling channel includes several annular channels and several connecting channels. Several annular flow channels 2 are concentrically embedded with different radii. Each of the connecting flow channels 2 is used to connect two adjacent annular flow channels 2. The central liquid inlet end is connected to the innermost annular flow channel 2. The central liquid outlet end is located outside the outermost annular flow channel 2 and is connected to the annular flow channel 2, so that the first coolant is input from the central liquid inlet end, passes through several annular flow channels 2 and several connecting flow channels 2, and is output from the central liquid outlet end.

[0007] Optionally, the temperature-controlled plasma grid further includes several heat-conducting elements; Each of the heat conduction elements is disposed within the edge grid portion, and both ends of each heat conduction element extend into the two adjacent annular channels to transfer the heat of the second coolant in the outer annular channel to the second coolant in the inner annular channel, thereby balancing the temperature difference of the second coolant in the radial direction.

[0008] Optionally, each of the heat conduction components is provided with a connecting channel extending through it along its axial direction. The connecting channel transports the second coolant in the inner annular flow channel of two adjacent components to the outer annular flow channel to balance the temperature difference of the second coolant in the radial direction.

[0009] Optionally, the temperature-controlled plasma grid further includes an isolation component and a sealing component; The isolation member is fixed to the connecting guide channel, and a connecting through hole is axially penetrating the isolation member. The cross-sectional area of ​​the connecting through hole increases along the direction of the outermost of the two adjacent annular flow channels. The sealing member is movably disposed within the connecting through hole and abuts against the inner sidewall of the connecting through hole. When the temperature difference between the second coolant in the two adjacent annular flow channels is greater than a preset temperature, it is pushed away from the inner annular flow channel by the second coolant in the inner one of the two adjacent channels, so that the sealing member disengages from the inner sidewall of the connecting through hole, and the second coolant in the inner one of the two adjacent channels is transported to the outer annular flow channel.

[0010] Optionally, the temperature-controlled plasma grid may further include several elastic connectors; Both ends of each of the elastic connectors are fixed to the inner sidewalls of the sealing member and the connecting channel, and a plurality of the elastic connectors are disposed at the same axial height of the heat conduction member, so as to extend or shorten when the sealing member moves toward or away from the outer annular flow channel of the two adjacent ones.

[0011] Optionally, the temperature-controlled plasma grid further includes several heat-conducting elements. Each of the heat conduction elements 2 is disposed within the central grid portion, and both ends of each of the heat conduction elements 2 extend into the two adjacent annular flow channels 2, so as to transfer the heat of the first coolant in the outer annular flow channel 2 to the first coolant in the inner annular flow channel 2, thereby balancing the temperature difference of the first coolant in the radial direction.

[0012] Optionally, the temperature-controlled plasma grid may further include a central guide tube and a central heat insulation tube; The central guide tube is disposed in the central cooling channel and extends along its cavity, and its two ends are respectively connected to the first coolant source and the central outlet. The central guide tube is axially provided with a plurality of central compensation holes corresponding to each section of the central cooling channel, so as to guide and transport the first coolant input from the first coolant source to each section of the central cooling channel. The central heat insulation tube is sleeved outside the central guide tube and extends along the axial direction of the central guide tube to block the heat exchange channel of the first coolant in the central cooling channel and the central guide tube. The central heat insulation tube has a plurality of first through holes that correspond one-to-one with each of the central compensation holes.

[0013] Optionally, the temperature-controlled plasma grid may further include edge guiding tubes and edge heat insulation tubes; The edge guide tube is disposed in the edge cooling channel and extends along its cavity, and its two ends are respectively connected to the second coolant source and the edge outlet. The edge guide tube is axially provided with a plurality of edge compensation holes corresponding to each section of the edge cooling channel, so as to guide and transport the second coolant input from the second coolant source to each section of the edge cooling channel. The edge heat insulation tube is sleeved outside the edge guide tube and extends along the axial direction of the edge guide tube to block the heat exchange channel of the second coolant in the edge cooling channel and the edge guide tube. The edge heat insulation tube has a plurality of second through holes that correspond one-to-one with each of the edge compensation holes.

[0014] Optionally, the temperature-controlled plasma grid further includes a temperature sensor one, a temperature sensor two, and a control module; Temperature sensor one, temperature sensor two, the first coolant source, and the second coolant source are all connected to the control module. Temperature sensor one and temperature sensor two are respectively located on the central grid section and the edge grid section. The control module controls the first coolant source and the second coolant source based on the temperatures collected by temperature sensor one and temperature sensor two on the central grid section and the edge grid section, respectively.

[0015] To achieve the above objectives, the present invention also provides a semiconductor processing apparatus, including a dielectric window, a reaction chamber, an induction coil, and the temperature-controlled plasma grid; the dielectric window is disposed at the top of the reaction chamber, and the induction coil is arranged around the outside of the dielectric window.

[0016] The beneficial effects of this invention are as follows: This invention addresses the problems of slow heat conduction, delayed temperature regulation, and low heat dissipation efficiency caused by passive heat dissipation from a back-side cold plate and air cooling in existing plasma grids. It also addresses issues such as component thermal stress damage, uneven deposition of by-products in the grid holes, and disordered plasma distribution caused by large temperature differences across the entire grid. By separating the central grid section and the edge grid section, and configuring independent first and second coolant sources, as well as zoned central and edge cooling channels, this invention achieves independent and precise temperature control in different areas of the grid body. This significantly improves the heat dissipation efficiency and temperature response speed of the grid body, effectively eliminates the temperature difference between the central and edge regions of the grid body, ensures uniform temperature across the entire grid body, reduces abnormal by-product deposition, and ultimately improves the consistency and yield of the wafer etching process. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of the structure of a semiconductor processing device in some embodiments of the present invention; Figure 2 for Figure 1 The diagram shows the structural schematic of the grid body. Figure 3 for Figure 2 An enlarged schematic diagram of the structure at position A in the diagram.

[0018] Explanation of reference numerals in the attached figures: 1. Medium window; 2. Reaction chamber; 3. Grid body; 31. Central grid section; 32. Edge grid section; 4. Induction coil; 5. Edge cooling channel; 51. Edge liquid inlet; 52. Edge liquid outlet; 53. Annular channel one; 54. Connecting channel one; 6. Central cooling channel; 61. Central liquid inlet; 62. Central liquid outlet; 63. Annular channel two; 64. Connecting channel two; 7. Heat conduction component one; 71. Connecting guide channel; 8. Isolation component; 81. Connecting through hole; 9. Sealing component; 10. Flexible connector; 11. Central guide pipe; 12. Edge guide pipe; 121. Edge compensation hole; 13. Edge heat insulation pipe. Detailed Implementation

[0019] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions in the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without inventive effort are within the scope of protection of this invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed following the word and its equivalents, but do not exclude other elements or objects.

[0020] This invention relates to a temperature-controlled plasma grid and semiconductor processing equipment, aiming to solve the problems of existing plasma grids that lack active temperature control, rely on passive heat dissipation leading to temperature lag, large internal and external temperature differences, are easily damaged, and affect plasma distribution.

[0021] To address the problems existing in the prior art, embodiments of the present invention provide a temperature-controlled plasma grid, such as... Figure 1 and Figure 2 As shown, the temperature-controlled plasma grid includes a grid body 3, a central cooling channel 6, and an edge cooling channel 5.

[0022] In some embodiments, such as Figure 1 As shown, the grid body 3 is disposed inside the window at the top of the reaction chamber 2; the grid body 3 includes a central grid portion 31 and an edge grid portion 32 surrounding the outer side of the central grid portion 31. The grid body 3 also includes an annular heat insulation portion surrounding the central grid portion 31 and the edge grid portion 32, the annular heat insulation portion being used to block the heat conduction channel between the central grid portion 31 and the edge grid portion 32.

[0023] This embodiment adds an annular heat insulation section to block direct heat conduction between the central grid section 31 and the edge grid section 32, which can prevent the two regions from canceling the effect of independent temperature control due to heat crosstalk; it makes the temperature of the central grid section 31 and the edge grid section 32 more closely match their respective set values, which not only enhances the accuracy and stability of zoned temperature control, but also reduces the ineffective energy consumption caused by cross-zone heat transfer, while reducing the risk of thermal stress concentration at the interface between the central grid section 31 and the edge grid section 32, further improving the overall reliability and service life of the grid body 3.

[0024] Furthermore, the grid body 3 naturally possesses a radially decreasing temperature gradient from the center to the edge. This is because the coupling energy of the induction coil 4 directly above the grid body 3 is most concentrated in the central grid section 31, resulting in the highest plasma density and the most heat release. As the magnetic field intensity gradually decreases towards the edge, the plasma density decreases accordingly, and the heat input decreases as well. At the same time, the central grid section 31 is farther from the heat dissipation structures such as the side walls of the reaction chamber 2, making it easier for heat to accumulate. The edge grid section 32 is connected to the low-temperature reaction chamber 2, providing better heat dissipation conditions. Under these dual effects, a radially decreasing temperature gradient is formed from the center to the edge.

[0025] The central region and edge region of the grid body 3 described in this invention correspond to the central grid portion 31 and the edge grid portion 32 of the grid body 3, and will not be described again hereafter.

[0026] In some embodiments, such as Figure 2 As shown, the central cooling channel 6 is located within the central grid section 31 and is connected to the first coolant source. The central inlet end 61 of the central cooling channel 6 is located at the center of the central grid section 31, and its central outlet end 62 is located near the junction of the central grid section 31 and the edge grid section 32.

[0027] The central inlet 61 is located at the very center of the central grid section 31, and the central outlet 62 is located near the junction of the central grid section 31 and the edge grid section 32. This design is suitable for the more concentrated heat distribution at the center, allowing the low-temperature first coolant to be injected preferentially from the center, where the temperature is highest. After absorbing heat radially outward, the coolant is discharged from the junction of the relatively low-temperature central grid section 31 and the edge grid section 32, forming a gradient heat exchange path from the inside out. This maximizes the heat dissipation efficiency of the high-heat zone at the center and rapidly reduces the temperature of the central grid section 31.

[0028] In some embodiments, such as Figure 2As shown, the edge cooling channel 5 is located within the edge grid section 32 and is connected to the second coolant source. The edge inlet end 51 of the edge cooling channel 5 is located near the junction of the central grid section 31 and the edge grid section 32, and its edge outlet end 52 is located near the edge of the edge grid section 32. The first coolant source and the second coolant source are injected into the central cooling channel 6 and the edge cooling channel 5 respectively to independently cool and control the temperature of the central grid section 31 and the edge grid section 32.

[0029] The edge inlet 51 is located near the junction of the central grid section 31 and the edge grid section 32, and the edge outlet 52 is located near the edge of the edge grid section 32. This matches the temperature distribution characteristic of the edge grid section 32, which gradually decreases radially away from the center of the grid body 3. The lower-temperature second coolant is preferentially injected from the relatively high-temperature inner junction area, gradually absorbing decreasing heat along the radial flow path before being discharged from the lowest-temperature outer edge. This not only matches the "high inside, low outside" heat load gradient of the edge region, avoiding energy waste and localized overcooling caused by the second coolant directly impacting the low-temperature outer edge, but also ensures that the second coolant continuously meets the actual heat demand of each section during the heating process, maximizing the heat absorption efficiency of the second coolant.

[0030] It is worth noting that the temperatures of both the first and second coolants are lower than the temperature of the grid body 3.

[0031] In some embodiments, such as Figure 2 As shown, the edge cooling channel 5 includes a plurality of annular channels 53 and a plurality of connecting channels 54. It is worth noting that the number of connecting channels 54 is one less than the number of annular channels 53. For example, when there are two annular channels 53, there is one connecting channel 54. Of course, the number of annular channels 53 is not limited to two, and the number of connecting channels 54 is not limited to one.

[0032] In some embodiments, such as Figure 2 As shown, several annular flow channels 53 are concentrically embedded with different radii, and each connecting flow channel 54 is used to connect two adjacent annular flow channels 53. The edge inlet end 51 is located inside the innermost annular flow channel 53 and is connected to the annular flow channel 53. The edge outlet end 52 is located outside the outermost annular flow channel 53 and is connected to the annular flow channel 53, so that the second coolant is input from the edge inlet end 51, passes through several annular flow channels 53 and several connecting flow channels 54, and is output from the edge outlet end 52.

[0033] This structure, with its concentric nested multi-ringed flow channels 53 and connecting flow channels 54, essentially constructs a continuous "serpentine" heat exchange path along the radial temperature gradient of the edge grid section 32. The second coolant enters from the high-temperature zone closest to the boundary (the boundary between the central grid section 31 and the edge grid section 32) and flows sequentially around the edge grid section 32 along ringed flow channels 53 of varying radii. Each time it passes through a ringed flow channel 53, it fully absorbs heat from the corresponding location. Then, through the connecting flow channels 54, it gradually transitions to the outermost low-temperature ringed flow channels 53, maintaining an optimal heat exchange temperature difference with the wall temperature of the currently flowing area throughout the entire process. The inner ringed flow channels 53 contact the low-temperature second coolant for efficient heat absorption, while the outer low-temperature zone contacts the already heated second coolant to avoid overcooling and waste or continuous cooling. This not only fully covers the radial heat exchange requirements of the edge grid section 32 but also eliminates the uneven circumferential flow and localized heat exchange dead zones that are prone to occur with a single ringed flow channel 53.

[0034] In some embodiments, such as Figure 2 As shown, the central cooling channel 6 includes several annular channels 63 and several connecting channels 64. It is worth noting that the number of connecting channels 64 is one less than the number of annular channels 63. For example, when there are two annular channels 63, there is one connecting channel 64. Of course, the number of annular channels 63 is not limited to two, and the number of connecting channels 64 is not limited to one.

[0035] In some embodiments, such as Figure 2 As shown, several annular flow channels 63 are concentrically embedded with different radii, and each connecting flow channel 64 is used to connect two adjacent annular flow channels 63. The central inlet end 61 is connected to the innermost annular flow channel 63. The central outlet end 62 is located outside the outermost annular flow channel 63 and is connected to it, so that the first coolant is input from the central inlet end 61, passes through several annular flow channels 63 and several connecting flow channels 64, and is output from the central outlet end 62.

[0036] The concentric nested multi-ring flow channel 2 63, together with the connecting flow channel 2 64, creates a "from the inside out" serpentine heat exchange path for the central grid section 31, matching its radial temperature gradient of high temperature at the center and low temperature near the edge. After the first coolant is injected from the highest heat load area at the center, it flows around the annular flow channel 2 63 of different radii in sequence, absorbing heat from the corresponding radial position segment by segment, and then transitions step by step through the connecting flow channel 2 64 to the annular flow channel 2 63 closer to the edge. Throughout the process, the optimal heat exchange temperature difference between the temperature of the first coolant and the wall temperature of the flow area is maintained. In the extremely high temperature zone at the center, the lowest temperature first coolant achieves efficient and strong heat absorption, while in the relatively low temperature zone near the edge, the already heated first coolant provides gentle heat exchange. This avoids thermal shock and energy waste caused by the low temperature first coolant directly impacting the wall of the annular flow channel 2 63 near the edge, and completely eliminates the circumferential flow deviation and local heat exchange dead zone problems that are prone to occur in a single annular flow channel 2 63. By increasing the number of annular flow channels 2 63, the heat absorption utilization rate of the first coolant is maximized, while further reducing the radial temperature difference inside the central grid section 31.

[0037] In some embodiments, such as Figure 2 and Figure 3 As shown, the temperature-controlled plasma grid also includes several heat-conducting elements 7. The shape of the heat-conducting elements 7 is preferably a radially extending columnar or needle-like structure, and the material is a copper, aluminum, or silicon carbide-based composite material with high thermal conductivity, high temperature resistance, and corrosion resistance.

[0038] In some embodiments, such as Figure 2 and Figure 3 As shown, each of the heat conduction elements 7 is disposed within the edge grid portion 32, and both ends of each of the heat conduction elements 7 extend into the two adjacent annular flow channels 53, so as to transfer the heat of the second coolant in the outer annular flow channel 53 to the second coolant in the inner annular flow channel 53, thereby balancing the temperature difference of the second coolant in the radial direction.

[0039] The structure of setting the cross-channel heat conduction element 7 between adjacent annular flow channels 53 is equivalent to building multiple active thermal bridges in the radial temperature gradient direction of the edge grid section 32. As the second coolant flows around the annular flow channel 53, the closer to the outside, the more heat is absorbed and the higher the temperature. The second coolant in the inner annular flow channel 53 is at a lower temperature when it is first injected. The heat conduction element 7 can directly "transfer" the heat of the heated second coolant on the outside to the low-temperature second coolant on the inside, thereby balancing the temperature of the second coolant in the inner and outer annular flow channels 53, so that the second coolant in the outer annular flow channel 53 still maintains a high heat dissipation efficiency.

[0040] In some embodiments, there are multiple heat conduction elements 7 disposed between two adjacent annular flow channels 53, and the multiple heat conduction elements 7 are arranged at equal intervals along the circumference.

[0041] In some embodiments, the heat-conducting element 7 is covered with a heat-insulating cover to block the heat conduction path between the heat-conducting element 7 and the edge grid portion 32. This prevents the heat of the grid body 3 from being directly carried away by the heat-conducting element 7, ensuring that the heat-conducting element 7 only transfers heat between the second coolant in adjacent annular flow channels 53. This prevents uneven thermal stress caused by local overcooling of the grid body 3 and ensures that heat is balanced laterally only within the second coolant. This makes the temperature regulation effect of the active thermal bridge more precise and controllable, further improving the uniformity and stability of the temperature field in the edge region.

[0042] In some embodiments, such as Figure 3 As shown, each of the heat conduction components 7 is provided with a connecting channel 71 extending through it along its axial direction. The connecting channel 71 transports the second coolant (the second coolant has a lower temperature) in the inner annular flow channel 53 of two adjacent components to the outer annular flow channel 53 (the second coolant has a higher temperature) to balance the temperature difference of the second coolant in the radial direction.

[0043] This embodiment superimposes an active temperature regulation mechanism on the passive heat transfer of heat conduction. The connecting channel 71 is equivalent to opening a directional "cold liquid bypass channel" between adjacent annular flow channels 53. When the second coolant in the inner annular flow channel 53 is at a low temperature due to its initial injection, while the second coolant in the outer annular flow channel 53 is at a high temperature due to continuous heat absorption, the low-temperature second coolant will be actively transported along the connecting channel 71 to the high-temperature outer annular flow channel 53. On the one hand, the overall temperature of the outer second coolant is directly reduced by the low-temperature second coolant, maintaining a sufficient heat exchange temperature difference between the outer annular flow channel 53 and the wall of the grid body 3, and avoiding the heat exchange efficiency decay of the outer annular flow channel 53 due to excessive temperature rise of the second coolant. On the other hand, the second coolant that has initially absorbed heat in the inner annular flow channel 53 continues to complete the remaining heat exchange journey in the outer annular flow channel 53, maximizing the heat absorption utilization rate of the second coolant. This dual balance mode of "heat conduction plus second coolant displacement" is faster and has a wider adjustment range than simply relying on heat conduction components. It can directly smooth out the radial temperature difference between adjacent annular flow channels 53 at the fluid composition level, further enhancing the uniformity of the temperature across the entire edge grid section 32.

[0044] In some embodiments, such as Figure 3As shown, the temperature-controlled plasma grid also includes an isolator 8 and a sealing member 9; the isolator 8 is fixed to the connecting guide 71, and a connecting through hole 81 is axially penetrating the isolator 8. The cross-sectional area of ​​the cavity of the connecting through hole 81 increases along the direction of the outermost of the two adjacent annular flow channels 53; the sealing member 9 is movably disposed in the connecting through hole 81 and abuts against the inner sidewall of the connecting through hole 81. When the temperature difference of the second coolant in the two adjacent annular flow channels 53 is greater than a preset temperature, it is pushed by the second coolant in the innermost annular flow channel 53 of the two adjacent annular flow channels 53 to move away from the innermost annular flow channel 53, so that the sealing member 9 is detached from the inner sidewall of the connecting through hole 81, and the second coolant in the innermost annular flow channel 53 of the two adjacent annular flow channels 53 is transported to the outermost annular flow channel 53.

[0045] In some embodiments, the temperature-controlled plasma grid further includes a plurality of elastic connectors 10; the two ends of each elastic connector 10 are respectively fixed to the inner sidewalls of the sealing member 9 and the connecting channel 71, and the plurality of elastic connectors 10 are disposed at the same axial height of the heat conduction member 7, so as to extend or shorten when the sealing member 9 moves closer to or away from the outer annular flow channel 53 of the two adjacent ones.

[0046] This embodiment can automatically control the flow of the second coolant from the inner annular flow channel 53 to the outer annular flow channel 53 based on the temperature difference between the second coolant in the inner and outer annular flow channels 53, while preventing the second coolant in the outer annular flow channel 53 from flowing to the inner annular flow channel 53. Specifically, the connecting through hole 81 adopts a tapered structure with an increased diameter towards the outer annular flow channel 53, which cooperates with the sealing member 9 to form a one-way sealing interface. When the temperature difference of the second coolant in the inner and outer annular flow channels 53 is less than a preset threshold, the sealing member 9 is held in place by the pulling force of the elastic connector 10. Under its action, it tightly abuts against the inner wall of the connecting through hole 81, blocking the flow capacity of the connecting guide 71; when the temperature difference between the inner low-temperature coolant and the outer high-temperature coolant exceeds the preset value, the high-density second coolant in the inner annular flow channel 53 will overcome the pulling force of the elastic connector 10, pushing the sealing member 9 to move slightly towards the expansion end, so that the connecting through hole 81 is open, and the inner low-temperature second coolant will then be automatically injected into the outer annular flow channel 53 through the connecting guide 71, quickly lowering the temperature of the second coolant in the outer annular flow channel 53; the whole process can be carried out without external control commands.

[0047] It is worth noting that when the temperature difference between the inner and outer second coolants is greater than the preset value, the pressure difference driving force formed by the inner low-temperature second coolant due to its higher density and static pressure pushes the sealing component 9 to overcome the pulling force of the elastic connector 10 and move towards the outer annular flow channel 53, so that the inner second coolant with a lower temperature and stronger heat absorption capacity flows into the outer annular flow channel 53.

[0048] In some embodiments, the sealing member 9 is preferably a frustum-shaped structure; the elastic connector 10 is preferably a spring.

[0049] In some embodiments, such as Figure 2 As shown, the temperature-controlled plasma grid also includes several heat conduction elements 2; each heat conduction element 2 is disposed in the central grid portion 31, and both ends of each heat conduction element 2 extend into two adjacent annular flow channels 2 63, so as to transfer the heat of the first coolant in the outer annular flow channel 2 63 to the first coolant in the inner annular flow channel 2 63, thereby balancing the temperature difference of the first coolant in the radial direction.

[0050] In this embodiment, the function of the second heat conduction element is the same as that of the first heat conduction element 7. It also contains a connecting channel 71, an isolation element 8, a sealing element 9, and an elastic connector 10. Its working principle is the same as that of the first heat conduction element 7, and will not be repeated here.

[0051] In some embodiments, such as Figure 2 As shown, the temperature-controlled plasma grid also includes a central guide tube 11 and a central heat insulation tube.

[0052] In some embodiments, such as Figure 2 As shown, the central guide tube 11 is disposed in the central cooling channel 6 and extends along its cavity, and its two ends are respectively connected to the first coolant source and the central outlet 62. The central guide tube 11 is axially provided with a plurality of central compensation holes corresponding to each section of the central cooling channel 6, so as to guide and transport the first coolant input from the first coolant source to each section of the central cooling channel 6.

[0053] A "direct cooling channel" independent of the main heat exchange circuit is constructed through the central guide pipe 11, perfectly adapting to the characteristic of the first coolant absorbing heat and rising in temperature along the flow path: as the first coolant flows around in the annular flow channel 63, the closer it is to the central outlet end 62, the higher its temperature becomes due to continuous absorption of heat from the grid body 3, the smaller the heat exchange temperature difference with the wall of the grid body 3, and the lower the heat absorption efficiency. The central guide pipe 11 directly delivers the low-temperature first coolant output from the first coolant source to the corresponding central compensation hole in each section, which is equivalent to continuously injecting "cooling supplement" at each radial position, neutralizing the temperature of the first coolant that has risen in real time, so that the first coolant in each section can be maintained at a low temperature, and always maintain a sufficiently large heat exchange temperature difference with the wall of the grid body 3, thus fundamentally avoiding the problem of "coolant overheating and weak heat exchange" at the end of the traditional series flow channel.

[0054] In some embodiments, such as Figure 2 As shown, the central heat insulation pipe is sleeved outside the central guide pipe 11 and extends axially along the central guide pipe 11 to block the heat exchange channel between the first coolant in the central cooling channel 6 and the central guide pipe 11. The central heat insulation pipe has several radially penetrating first through holes corresponding one-to-one with each of the central compensation holes. This design, through the "selective blocking" effect of the central heat insulation pipe, retains the channel for precise liquid supply from the central guide pipe 11 to each section while cutting off the ineffective heat exchange between the low-temperature first coolant in the central guide pipe 11 and the already heated first coolant in the central cooling channel 6.

[0055] In some embodiments, such as Figure 2 As shown, the temperature-controlled plasma grid also includes an edge guide tube 12 and an edge heat insulation tube 13. The edge guide tube 12 is disposed within the edge cooling channel 5 and extends along its cavity, with its two ends respectively connected to the second coolant source and the edge outlet end 52. The edge guide tube 12 is axially perforated with a plurality of edge compensation holes 121 corresponding to each section of the edge cooling channel 5, so as to guide and transport the second coolant input from the second coolant source to each section of the edge cooling channel 5.

[0056] An independent "cold energy direct delivery channel" is constructed through the edge guide pipe 12, perfectly adapting to the characteristic of the second coolant absorbing heat and rising temperature along the flow path: as the second coolant flows around in the annular flow channel 53, the closer it is to the edge outlet end 52, the higher its temperature becomes due to continuous absorption of heat from the grid body 3, the smaller the heat exchange temperature difference with the wall of the grid body 3, and the lower the heat absorption efficiency. The edge guide pipe 12 directly delivers the low-temperature second coolant output from the second coolant source to the corresponding edge compensation hole 121 of each section, which is equivalent to continuously injecting "cold energy supplement" at each radial position, neutralizing the temperature of the second coolant that has risen in real time, so that the second coolant in each section can be maintained at a low temperature, and always maintain a sufficiently large heat exchange temperature difference with the wall of the grid body 3, thus avoiding the problem of "coolant overheating and weak heat exchange" at the end of the traditional series flow channel from the root.

[0057] In some embodiments, such as Figure 2 As shown, the edge heat insulation pipe 13 is sleeved outside the edge guide pipe 12 and extends along the axial direction of the edge guide pipe 12 to block the heat exchange channel of the second coolant in the edge cooling channel 5 and the edge guide pipe 12. The edge heat insulation pipe 13 has a plurality of second through holes that radially penetrate it, each corresponding to one of the edge compensation holes 121. The edge heat insulation pipe 13 has the same function as the central heat insulation pipe, and will not be described further here.

[0058] In some embodiments, the materials of the central guide tube 11 and the edge guide tube 12 are preferably non-metallic polymer materials with low thermal conductivity, resistance to coolant corrosion and high temperature resistance, such as polytetrafluoroethylene or modified polyimide. Their low thermal conductivity naturally blocks the heat exchange between the low-temperature coolant in the guide tube and the already heated coolant in the cooling channel, thereby reducing the loss of cold energy of the low-temperature coolant in the guide tube along the way.

[0059] In some embodiments, the edge insulation tube 13 and the center insulation tube are preferably made of special engineering plastics or ceramic matrix composites with extremely low thermal conductivity, high temperature resistance and coolant corrosion resistance, such as polyetheretherketone, polytetrafluoroethylene or boron nitride filled polymers.

[0060] In some embodiments, the temperature-controlled plasma grid further includes a temperature sensor, a temperature sensor, and a control module.

[0061] In some embodiments, temperature sensor one, temperature sensor two, the first coolant source, and the second coolant source are all connected to the control module. Temperature sensor one and temperature sensor two are respectively located on the central grid section 31 and the edge grid section 32. The control module controls the first coolant source and the second coolant source based on the temperatures collected by temperature sensor one and temperature sensor two on the central grid section 31 and the edge grid section 32, respectively.

[0062] By collecting independent temperature data of the two regions in real time through temperature sensors 1 and 2 respectively located in the central grid section 31 and the edge grid section 32, the control module can accurately identify the actual temperature difference between the central grid section 31 and the edge grid section 32 and their respective radial temperature fluctuations. Then, it can adjust the flow rate and temperature of the first and second coolants accordingly to achieve completely independent control of the two regions. It can increase the cooling supply as needed in the high-temperature zone of the central grid section 31, and avoid over-cooling and energy waste in the low-temperature zone of the edge grid section 32. It can also dynamically compensate for instantaneous temperature changes during the process, and completely eliminate thermal crosstalk between the two regions from the control logic level, ensuring that the temperature of the central grid section 31 and the edge grid section 32 is always stably maintained within their respective target ranges.

[0063] In some embodiments, the temperature sensor one and the temperature sensor two are preferably contact-type infrared fiber optic temperature sensors or high-precision thin-film thermocouples, which can be directly embedded in the interior of the central grid portion 31 and the edge grid portion 32 of the grid body 3.

[0064] In some embodiments, the control module is preferably an industrial PLC with integrated PID algorithm or feedforward compensation function.

[0065] To address the problems existing in the prior art, embodiments of the present invention also provide a semiconductor processing apparatus, such as... Figure 1 As shown, the semiconductor processing device includes a dielectric window 1, a reaction chamber 2, an induction coil 4, and the temperature-controlled plasma grid; the dielectric window 1 is located at the top of the reaction chamber 2, and the induction coil 4 is arranged around the outside of the dielectric window 1.

[0066] In some embodiments, the semiconductor processing equipment includes plasma etching equipment, chemical vapor deposition equipment, atomic layer deposition equipment, and photoresist removal equipment. The temperature-controlled plasma grid is located below the dielectric window 1 at the top of the reaction chamber 2 of such equipment. By controlling the temperature independently in different zones, the plasma homogenization effect is ensured. It can be widely adapted to various semiconductor manufacturing processes such as dry etching, thin film deposition, and photoresist removal, effectively improving process uniformity and increasing wafer yield.

[0067] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of the present invention. Furthermore, the present invention described herein may have other embodiments and can be implemented or carried out in various ways.

Claims

1. A temperature-controlled plasma grid, characterized in that, include: A grid body is disposed inside a window at the top of the reaction chamber; the grid body includes a central grid portion and an edge grid portion surrounding the outer side of the central grid portion; A central cooling channel is provided within the central grid section and is connected to the first coolant source. The central inlet of the central cooling channel is located at the center of the central grid section, and its central outlet is located near the junction of the central grid section and the edge grid section. An edge cooling channel is provided within the edge grid section and communicates with a second coolant source. The edge inlet of the edge cooling channel is located near the junction of the central grid section and the edge grid section, and its edge outlet is located near the edge of the edge grid section. A first coolant and a second coolant are injected into the central cooling channel and the edge cooling channel respectively through the first coolant source and the second coolant source, so as to independently cool and control the temperature of the central grid section and the edge grid section.

2. The temperature-controlled plasma grid according to claim 1, characterized in that, The edge cooling channel includes several annular channels and several connecting channels. Several annular flow channels are concentrically embedded with different radii. Each connecting flow channel is used to connect two adjacent annular flow channels. The edge inlet is located inside the innermost annular flow channel and is connected to it. The edge outlet is located outside the outermost annular flow channel and is connected to it, so that the second coolant is input from the edge inlet, passes through several annular flow channels and several connecting flow channels, and is output from the edge outlet.

3. The temperature-controlled plasma grid according to claim 1, characterized in that, The central cooling channel includes several annular channels II and several connecting channels II; Several annular flow channels 2 are concentrically embedded with different radii. Each of the connecting flow channels 2 is used to connect two adjacent annular flow channels 2. The central liquid inlet end is connected to the innermost annular flow channel 2. The central liquid outlet end is located outside the outermost annular flow channel 2 and is connected to the annular flow channel 2, so that the first coolant is input from the central liquid inlet end, passes through several annular flow channels 2 and several connecting flow channels 2, and is output from the central liquid outlet end.

4. The temperature-controlled plasma grid according to claim 2, characterized in that, It also includes several heat-conducting components; Each of the heat conduction elements is disposed within the edge grid portion, and both ends of each heat conduction element extend into the two adjacent annular channels to transfer the heat of the second coolant in the outer annular channel to the second coolant in the inner annular channel, thereby balancing the temperature difference of the second coolant in the radial direction.

5. The temperature-controlled plasma grid according to claim 4, characterized in that, Each of the heat conduction components is provided with a connecting channel running through it along its axial direction. The connecting channel transports the second coolant in the inner annular flow channel of two adjacent components to the outer annular flow channel to balance the temperature difference of the second coolant in the radial direction.

6. The temperature-controlled plasma grid according to claim 5, characterized in that, It also includes isolation components and sealing components; The isolation member is fixed to the connecting guide channel, and a connecting through hole is axially penetrating the isolation member. The cross-sectional area of ​​the connecting through hole increases along the direction of the outermost of the two adjacent annular flow channels. The sealing member is movably disposed within the connecting through hole and abuts against the inner sidewall of the connecting through hole. When the temperature difference between the second coolant in the two adjacent annular flow channels is greater than a preset temperature, it is pushed away from the inner annular flow channel by the second coolant in the inner one of the two adjacent channels, so that the sealing member disengages from the inner sidewall of the connecting through hole, and the second coolant in the inner one of the two adjacent channels is transported to the outer annular flow channel.

7. The temperature-controlled plasma grid according to claim 6, characterized in that, It also includes several flexible connectors; Both ends of each of the elastic connectors are fixed to the inner sidewalls of the sealing member and the connecting channel, and a plurality of the elastic connectors are disposed at the same axial height of the heat conduction member, so as to extend or shorten when the sealing member moves toward or away from the outer annular flow channel of the two adjacent ones.

8. The temperature-controlled plasma grid according to claim 3, characterized in that, It also includes several heat-conducting components; Each of the heat conduction elements 2 is disposed within the central grid portion, and both ends of each of the heat conduction elements 2 extend into the two adjacent annular flow channels 2, so as to transfer the heat of the first coolant in the outer annular flow channel 2 to the first coolant in the inner annular flow channel 2, thereby balancing the temperature difference of the first coolant in the radial direction.

9. The temperature-controlled plasma grid according to claim 1, characterized in that, It also includes a central guide pipe and a central insulation pipe; The central guide tube is disposed in the central cooling channel and extends along its cavity, and its two ends are respectively connected to the first coolant source and the central outlet. The central guide tube is axially provided with a plurality of central compensation holes corresponding to each section of the central cooling channel, so as to guide and transport the first coolant input from the first coolant source to each section of the central cooling channel. The central heat insulation tube is sleeved outside the central guide tube and extends along the axial direction of the central guide tube to block the heat exchange channel of the first coolant in the central cooling channel and the central guide tube. The central heat insulation tube has a plurality of first through holes that correspond one-to-one with each of the central compensation holes.

10. The temperature-controlled plasma grid according to claim 1, characterized in that, It also includes edge guide pipes and edge insulation pipes; The edge guide tube is disposed in the edge cooling channel and extends along its cavity, and its two ends are respectively connected to the second coolant source and the edge outlet. The edge guide tube is axially provided with a plurality of edge compensation holes corresponding to each section of the edge cooling channel, so as to guide and transport the second coolant input from the second coolant source to each section of the edge cooling channel. The edge heat insulation tube is sleeved outside the edge guide tube and extends along the axial direction of the edge guide tube to block the heat exchange channel of the second coolant in the edge cooling channel and the edge guide tube. The edge heat insulation tube has a plurality of second through holes that correspond one-to-one with each of the edge compensation holes.

11. The temperature-controlled plasma grid according to claim 1, characterized in that, It also includes temperature sensor one, temperature sensor two, and a control module; Temperature sensor one, temperature sensor two, the first coolant source, and the second coolant source are all connected to the control module. Temperature sensor one and temperature sensor two are respectively located on the central grid section and the edge grid section. The control module controls the first coolant source and the second coolant source based on the temperatures collected by temperature sensor one and temperature sensor two on the central grid section and the edge grid section, respectively.

12. A semiconductor processing apparatus, characterized in that, It includes a dielectric window, a reaction chamber, an induction coil, and a temperature-controlled plasma grid as described in any one of claims 1 to 11; the dielectric window is disposed at the top of the reaction chamber, and the induction coil is arranged around the outside of the dielectric window.

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