Vertical nanostructure energy storage devices with separate top electrode layer and methods of fabrication

Abstract

An energy storage device (11) comprising: a first bottom electrode layer portion (35) and a second bottom electrode layer portion (37) conductively separated from the first bottom electrode layer portion (35); a first plurality of electrically conductive vertical nanostructures (39) on the first bottom electrode layer portion (35); a second plurality of electrically conductive vertical nanostructures (39) on the second bottom electrode layer portion (37); an electrically conductive control layer (41) conformally covering each nanostructure (39); a first top electrode layer portion (45) conductively separated from the first bottom electrode (33) and directly disposed on a portion of the second bottom electrode layer portion; and a second top electrode layer portion (47) conductively separated from the second bottom electrode layer portion (37) and directly disposed on a portion of the first bottom electrode layer portion (35).

Description

Technical Field

[0001] The present invention relates to an energy storage device comprising a substrate and a plurality of nanostructures extending from the substrate, and to a method for manufacturing such an energy storage device. Background Technology

[0002] To accommodate the increasing clock frequencies and decreasing sizes in electronic devices, there is a need for compact and high-capacity energy storage devices. Discrete MIM (metal-insulator-metal) capacitor components have been developed, exhibiting smaller size and higher capacitance.

[0003] US 2022 / 0013305 A1 discloses a discrete MIM energy storage device, including an MIM arrangement comprising: a first electrode layer; a plurality of conductive nanostructures grown from the first electrode layer; a conductive control material covering each of the plurality of conductive nanostructures and the first electrode layer not covered by the conductive nanostructures; and a second electrode layer covering the conductive control material; a first contact pad for external electrical connection of a capacitor component; a second contact pad for external electrical connection of the capacitor component; and an electrically insulating encapsulation material at least partially embedded in the MIM arrangement. Different configurations of the discrete MIM energy storage device in US 2022 / 0013305 A1 can be manufactured to be very compact and have high energy storage capacity.

[0004] It is desirable to provide energy storage devices with similar characteristics, thereby enabling advantageous electrical connections between the first electrode layer of the energy storage device and the first contact pad for external connection, and between the second electrode layer of the energy storage device and the second contact pad for external connection. Summary of the Invention

[0005] According to a first aspect of the invention, an energy storage device is thus provided, comprising: a bottom electrode layer including a first bottom electrode layer portion and a second bottom electrode layer portion conductively separated from the first bottom electrode layer portion; a first plurality of conductive vertical nanostructures extending from and conductively connected to the first bottom electrode layer portion; a second plurality of conductive vertical nanostructures extending from and conductively connected to the second bottom electrode layer portion; a conductivity control layer conformally covering each nanostructure of the first plurality of conductive vertical nanostructures and each nanostructure of the second plurality of conductive vertical nanostructures; and a top electrode layer including: a first top electrode layer portion conductively separated from the first bottom electrode layer portion via the conductivity control layer; and a second top electrode layer portion conductively separated from the second bottom electrode layer portion via the conductivity control layer and conductively separated from the first top electrode layer portion, wherein the first top electrode layer portion is directly disposed on a portion of the second bottom electrode layer portion for conductive connection to the second bottom electrode layer portion; and the second top electrode layer portion is directly disposed on a portion of the first bottom electrode layer portion for conductive connection to the first bottom electrode layer portion.

[0006] In the context of this application, the term "conformal cover" should be understood to mean covering in a manner where the thickness of the conformal cover layer is substantially the same, regardless of the orientation of the surface covered by the layer. Various deposition methods for achieving conformal cover are well known to those skilled in the art. Prominent examples of potentially suitable deposition methods are various vapor phase deposition methods, such as CVD, ALD, and PVD.

[0007] This invention is based on the understanding that conductive connections to the bottom electrode layer can be achieved without the need for long connection plugs. The inventors have also recognized that this can be achieved by providing the bottom electrode layer as conductively separated bottom electrode layer portions, providing the top electrode layer as conductively separated top electrode layer portions, and alternately conductively connecting the top electrode layer portions to the bottom electrode layer portions. Thus, the bottom electrode layer portions can be conductively connected to external contact pads via the top electrode layer portions. This eliminates the need for long connection plugs between the bottom electrode layer and the external contact pads, which in turn provides convenient manufacturing and improves substrate area utilization. Consequently, for a given energy storage device footprint, the energy storage device can be manufactured with higher throughput and / or higher energy storage capacity. Furthermore, the configuration according to various aspects of this disclosure allows for the use of longer, vertically extending nanostructures, which can also contribute to higher energy storage capacity for a given energy storage device footprint.

[0008] In the example configuration, the conductive control layer may have a first opening on a portion of the first bottom electrode layer and a second opening on a portion of the second bottom electrode layer; the first top electrode layer may be directly disposed on a portion of the second bottom electrode layer within the second opening of the conductive control layer; and the second top electrode layer may be directly disposed on a portion of the first bottom electrode layer within the first opening of the conductive control layer.

[0009] Advantageously, the top electrode layer may include: a first top electrode sublayer conformally covering the conductive control layer; and a second top electrode sublayer conformally covering the first top electrode sublayer. This configuration can facilitate the formation of the first top electrode layer portion and the second top electrode layer portion.

[0010] The first top electrode sublayer may advantageously have a first opening on a portion of the first bottom electrode layer and a second opening on a portion of the second bottom electrode layer; the second top electrode sublayer of the first top electrode layer may be directly disposed on a portion of the second bottom electrode layer within the second opening of the first top electrode sublayer; and the second top electrode sublayer of the second top electrode layer may be directly disposed on a portion of the first bottom electrode layer within the first opening of the first top electrode sublayer.

[0011] In an example configuration of the energy storage device, a first plurality of conductive vertical nanostructures can be grown from a portion of a first bottom electrode layer; and a second plurality of conductive vertical nanostructures can be grown from a portion of a second bottom electrode layer.

[0012] Advantageously, the first multiple conductive vertical nanostructures and the second multiple conductive vertical nanostructures can be carbon nanofibers.

[0013] In the example configuration, the conductive control layer can be made of a solid dielectric material, and the energy storage device can be a capacitor.

[0014] In other example configurations, the conductive control layer can be an electrolyte. The electrolyte can be a liquid or a solid.

[0015] The energy storage device may include a non-conductive substrate, with the bottom electrode layer supported by the non-conductive substrate.

[0016] According to the example configuration, the energy storage device may further include at least one first contact pad for external electrical connection of the energy storage device, the at least one first contact pad being electrically connected to a first top electrode layer portion; and at least one second contact pad for external electrical connection of the energy storage device, the at least one second contact pad being electrically connected to a second top electrode layer portion.

[0017] Advantageously, at least one first contact pad can be conductively connected to a first top electrode layer portion directly above the first plurality of conductive vertical nanostructures; and at least one second contact pad can be conductively connected to a second top electrode layer portion directly above the second plurality of conductive vertical nanostructures. This example configuration can provide shorter conductive paths in energy storage devices, which can provide lower ESR (electrical series resistance) and / or ESL (electrical series inductance), which in turn provides improved high-frequency characteristics of the energy storage device. This can be an important factor, for example, when the energy storage device is a capacitor used for decoupling purposes.

[0018] In an example configuration of an energy storage device, the energy storage device may include an electrically insulating encapsulating material that at least partially forms the outer boundary surface of the energy storage device; and each of the first contact pad and the second contact pad may at least partially form the outer boundary surface of the energy storage device. This configuration provides discrete energy storage device components that are robust and suitable for reasonable electronic device production using so-called "pick-and-place" type mass production equipment.

[0019] Energy storage devices according to various exemplary configurations of the invention can be advantageously included in an electronic system, the electronic system further comprising: a substrate having a substrate conductor pattern having substrate pads included in the substrate conductor pattern; a semiconductor component having an active circuit system, and component pads of the active circuit system coupled to the semiconductor component, the component pads being connected to substrate pads of the substrate; and a power source interface for receiving power from a power source, the power source interface being connected to the substrate conductor pattern. The energy storage device may be electrically connected to a first component pad of the semiconductor component and to a second component pad of the semiconductor component. Specifically, a first top electrode layer portion may be electrically connected to the first component pad, and a second top electrode layer portion may be electrically connected to the second component pad.

[0020] According to a second aspect of the present invention, a method of manufacturing an energy storage device is provided, comprising: providing a non-conductive substrate having a bottom electrode layer patterned to include a first bottom electrode layer portion and a second bottom electrode layer portion conductively separated from the first bottom electrode layer portion; providing a first plurality of conductive nanostructures on the first bottom electrode layer portion such that each of the first plurality of conductive nanostructures extends substantially perpendicularly from the first bottom electrode layer portion; providing a second plurality of conductive nanostructures on the second bottom electrode layer portion such that each of the second plurality of conductive nanostructures extends substantially perpendicularly from the second bottom electrode layer portion; and [further details regarding the first plurality of conductive nanostructures and the second plurality of conductive nanostructures]. The structure applies a conformal conductive control layer; and provides a top electrode layer comprising: providing a first top electrode layer portion on a portion of the conductive control layer covering a first plurality of conductive nanostructures and directly on a portion of a second bottom electrode layer portion such that the first top electrode layer portion is conductively connected to and conductively separated from the second bottom electrode layer portion; and providing a second top electrode layer portion on a portion of the conductive control layer covering a second plurality of conductive nanostructures and directly on a portion of the first bottom electrode layer portion such that the second top electrode layer portion is conductively connected to and conductively separated from the second bottom electrode layer portion and conductively separated from the first top electrode layer portion.

[0021] According to an example, providing a top electrode layer may include: conformally covering a conductive control layer with a first top electrode sublayer to form a stacked layer configuration including a conductive control layer and a first top electrode layer; removing the stacked layer configuration over a portion of a first bottom electrode layer portion, exposing that portion of the first bottom electrode layer portion, and removing the stacked layer configuration over a portion of a second bottom electrode layer portion, exposing that portion of the second bottom electrode layer portion; conformally covering the stacked layer configuration, that portion of the first bottom electrode layer portion, and that portion of the second bottom electrode layer portion with a second top electrode sublayer; and selectively removing the first top electrode sublayer and the second electrode sublayer to form the first top electrode layer portion and the second electrode layer portion.

[0022] In summary, aspects of the present invention therefore relate to an energy storage device comprising: a first bottom electrode layer portion and a second bottom electrode layer portion conductively separated from the first bottom electrode layer portion; a first plurality of conductive vertical nanostructures on the first bottom electrode layer portion; a second plurality of conductive vertical nanostructures on the second bottom electrode layer portion; a conductive control layer conformally covering each nanostructure; a first top electrode layer portion conductively separated from the first bottom electrode and disposed directly on a portion of the second bottom electrode layer portion; and a second top electrode layer portion conductively separated from the second bottom electrode layer portion and disposed directly on a portion of the first bottom electrode layer portion. Attached Figure Description

[0023] These and other aspects of the invention will now be described in more detail with reference to the accompanying drawings, in which:

[0024] Figure 1 schematically illustrates the application of an energy storage device according to an example of the invention, in the form of an illustrative mobile phone;

[0025] Figure 2 An example of a circuit board according to the prior art is shown schematically, which can represent a typical circuit board in current electronic devices;

[0026] Figure 3 The illustration schematically shows the replacement of the energy storage device according to an example of the invention. Figure 2 The possible meaning of conventional energy storage components on the circuit board;

[0027] Figure 4 This is a schematic diagram of an energy storage device configured according to an example;

[0028] Figure 5 is Figure 4 A schematic cross-sectional view of the energy storage device in the diagram, taken along the first line;

[0029] Figure 6A to Figure 6C This is an enlarged view of different parts of the energy storage device in Figure 5;

[0030] Figures 7A to 7B It corresponds to Figure 6B to Figure 6C A view of a cross-section taken along another line, which may be parallel to the first line defining the cross-section in Figure 5;

[0031] Figure 8 This is a flowchart illustrating the example method;

[0032] Figure 9 This is a flowchart illustrating the example method; and

[0033] Figures 10A to 10K schematically shown Figure 9 Different steps in the method. Detailed Implementation

[0034] Figure 1 schematically illustrates an electronic device according to an embodiment of the present invention, which is in the form of a mobile phone 1. In the simplified and schematic illustration in Figure 1, it is shown that the mobile phone, like most electronic devices, includes an electronic system 3, which includes a circuit board filled with semiconductor components 5 and passive components, including energy storage devices in the form of capacitors 7.

[0035] An exemplary illustration of electronic system 3 using technologies currently available for reasonable and cost-effective mass production. Figure 2 In this circuit, there are numerous capacitors 7 mounted on a circuit board 9, which can be provided in the form of a printed circuit board (PCB). The capacitors 7 currently used are typically so-called multilayer ceramic capacitors (MLCCs), which have a minimum package height of approximately 0.4 mm.

[0036] In order to provide even more compact electronic devices with even higher processing speeds, it is desirable to reduce the space occupied by the capacitors 7 required for decoupling and temporary energy storage, and to reduce the distance between the semiconductor component 5 and the capacitors 7 that serve the semiconductor component 5.

[0037] This can be achieved using an energy storage device according to an example of the invention, which can be manufactured with a package height much smaller than that of a conventional MLCC having the same capacitance and footprint.

[0038] Figure 3 This is a schematic illustration of an electronic system 3 according to an example of the present invention, which includes a circuit board 9, semiconductor components 5, a power source interface 15, and a plurality of energy storage devices. Figure 3 In the figure, only two energy storage devices 11a to 11b are indicated by reference numerals to avoid confusion. The circuit board 9 has a circuit board conductor pattern 17 and circuit board pads 19 included in the circuit board conductor pattern 17. The semiconductor component has an active circuit system (…). Figure 3 (Not visible in the image) and component pads 13 coupled to the active circuit system. Component pads 13 are connected to circuit board pads 19 of the circuit board 9. Power source interface 15 is configured to receive power from a power source and is connected to circuit board conductor pattern 17.

[0039] One of the indicated energy storage devices, energy storage device 11a, is disposed between circuit board 9 and semiconductor component 5. First contact pad 21 of energy storage device 11a is conductively connected to first component pad 13a of semiconductor component 5, and second contact pad 23 of energy storage device 11a is conductively connected to second component pad 13b of semiconductor component 5.

[0040] Another energy storage device 11b of the indicated energy storage devices is embedded in the circuit board 9. The first contact pad 21 of the energy storage device 11b is conductively connected to the first circuit board pad 19a of the circuit board conductor pattern 17, and the second contact pad 23 of the energy storage device 11b is conductively connected to the second circuit board pad 19b of the circuit board conductor pattern 17.

[0041] from Figure 3 As can be clearly seen, the reduced package height of the energy storage device 11 allows it to be placed below the semiconductor component 5 and / or embedded in the substrate 9. This arrangement of the energy storage device 11 clearly allows for a smaller substrate 9, and thus a more compact electronic system 3. It also obviously provides a shorter distance between the active circuitry in the semiconductor component 5 and the energy storage device 11, which reduces ESL (electrical series inductance).

[0042] Figure 4 This is a schematic diagram of the energy storage device 11 configured according to the example. Figure 4 The exemplary energy storage device 11 has an outer boundary surface that is at least partially formed by an electrically insulating encapsulation material 25. Figure 4 In the example configuration, the substrate 27 of the energy storage device 11 also partially forms the outer boundary surface of the energy storage device 11.

[0043] Figure 4 The exemplary energy storage device 11 is a discrete capacitor component that can be connected to, for example, a semiconductor component 5 or a substrate conductor pattern 17 by means of a plurality of first contact pads 21 and a plurality of second contact pads 23 substantially uniformly distributed on the top surface of the energy storage device 11. By providing a plurality of first contact pads 21 and a plurality of second contact pads 23, the ESR and / or ESL of the energy storage device 11 can be reduced, thereby providing improved decoupling characteristics.

[0044] Figure 5 is Figure 4 The energy storage device 11 in the middle Figure 4 A schematic cross-sectional view of the section taken by line A-A' in Figure 5. Referring first to Figure 5, the energy storage device 11 includes the aforementioned substrate 27, a plurality of first nanostructure MIM (metal-insulator-metal) arrangements 29, a plurality of second nanostructure MIM (metal-insulator-metal) arrangements 31 (only one of these second nanostructure MIM arrangements is visible in Figure 5), the aforementioned first contact pad 21, and the aforementioned second contact pad 23 (only one of these second contact pads 23 is visible in Figure 5). The substrate 27 may be substantially non-conductive and may be made, for example, of undoped silicon.

[0045] The energy storage device 11 includes a bottom electrode layer 33, which includes at least one first bottom electrode portion 35 and at least one second bottom electrode portion 37 electrically separated from the at least one first bottom electrode portion 35. In the example configuration of FIG5, the bottom electrode layer 33 includes a plurality of first bottom electrode portions 35 and a plurality of second bottom electrode portions 37 (only one of these second bottom electrode portions 37 is visible in FIG5). (Refer to...) Figure 4 A first bottom electrode portion may be present below each first contact pad 21, and a second bottom electrode portion may be present below each second contact pad 23.

[0046] Referring again to FIG5, each first nanostructure MIM arrangement 29 includes a first plurality of conductive vertical nanostructures 39 extending from and conductively connected to the corresponding first bottom electrode portion 35. As best seen in FIG6A, which is an enlarged view of a portion of the interior of the first nanostructure MIM arrangement 29, the first nanostructure MIM arrangement 29 also includes a conductive control layer 41 and a top electrode layer 43.

[0047] Each second nanostructure MIM arrangement 31 includes a second plurality of conductive vertical nanostructures 39 extending from and conductively connected to a corresponding second bottom electrode portion 37. As described above with respect to the first nanostructure MIM arrangement 29, the second nanostructure MIM arrangement 31 further includes a conductive control layer 41 and a top electrode layer 43.

[0048] The conductive vertical nanostructure 39 can advantageously be a grown nanostructure and can be a so-called carbon nanofiber (CNF). However, other possibilities exist and may be advantageous depending on the application. Although not shown in the figures, it should be understood that the conductive vertical nanostructure 39 in the example configuration of the energy storage device 11 can be conductive, at least partially, by means of a conductive (e.g., metallic) layer conformally covering the grown nanostructure. In the example configuration, the grown nanostructure can be inherently electrically insulating and conformally covered by a conductive layer.

[0049] The conductivity control layer 41 can advantageously be made of a so-called high-k dielectric. The high-k dielectric material can be, for example, HfOx, TiOx, TaOx, or other known high-k dielectrics. Alternatively, the conductivity control layer 41 can be polymer-based, such as polypropylene, polystyrene, poly(p-xylene), parylene, etc. Other known dielectric materials such as SiOx or SiNx can also be used for the conductivity control layer 41. The conductivity control layer 41 can be a multilayer structure, which may include sublayers of different material compositions.

[0050] The top electrode layer 43 includes at least one first top electrode layer portion 45 electrically separated from a corresponding first bottom electrode layer portion 35 via a conductive control layer 41, and at least one second top electrode layer portion 47 electrically separated from a corresponding second bottom electrode layer portion 37 via a conductive control layer 41 and electrically separated from each first top electrode layer portion 45. Block arrows 49 and 49 in Figure 6B... Figure 6C The block arrow 51 in the figure indicates the second top electrode layer portion 47 and the left (Fig. 6B) and right (Fig. 6B) of the second top electrode layer portion 47. Figure 6C The first top electrode layer portion 45 is electrically separated.

[0051] As shown in Figure 6B and Figure 6C As schematically shown, the second top electrode layer portion 47 is disposed directly on a portion 53 of each of the first bottom electrode layer portions 35 (left and right) and is thus electrically connected to the first bottom electrode layer portion 35.

[0052] Similarly, but in ways different from Figures 5 and 6A to 6A Figure 6C In another section of section A-A', the first top electrode layer portion 45 is directly disposed on a portion of the second bottom electrode layer portion 37 and is thereby electrically connected to the second bottom electrode layer portion 37. The connection between the first top electrode layer portion 45 and the second bottom electrode layer portion 37 can be visualized in cross-section as... Figure 7A and Figure 7B The illustration in the image, Figure 7A and Figure 7B The illustrations in the figures are basically Figure 6B and Figure 6B respectively. Figure 6C A mirror image of the illustration. Figures 7A to 7B In the middle, the portion of the second bottom electrode layer 37 mentioned above is marked as 55.

[0053] Refer to Figure 6B to Figure 6C as well as Figures 7A to 7B In this example configuration, the conductive control layer 41 has a first opening 57 on a portion 53 of the first bottom electrode layer portion 35 and a second opening 59 on a portion 55 of the second bottom electrode layer portion 37. The first top electrode layer portion 45 is directly disposed on a portion 55 of the second bottom electrode layer portion 37 within the second opening 59 of the conductive control layer 41, and the second top electrode layer portion 47 is directly disposed on a portion 53 of the first bottom electrode layer portion 35 within the first opening 57 of the conductive control layer 41.

[0054] In Figures 5 and 6A to Figure 6C as well as Figures 7A to 7BIn the example configuration shown, the top electrode layer 43 includes a first top electrode sublayer 61 conformally covering the conductive control layer 41, and a second top electrode sublayer 63 conformally covering the first top electrode sublayer 61. Refer to Figures 6B to... Figure 6C as well as Figures 7A to 7B The first top electrode sublayer 61 has a first opening on a portion 53 of the first bottom electrode layer portion 35, and a second opening on a portion 55 of the second bottom electrode layer portion 37. For example... Figures 7A to 7B As shown, the second top electrode sublayer 63 of the first top electrode portion 45 is directly disposed on portion 55 of the second bottom electrode portion 37 within the second opening of the first top electrode sublayer. (See Figures 6B to 6C). Figure 6C As shown, the second top electrode sublayer 63 of the second top electrode portion 47 is directly disposed on the portion 53 of the first bottom electrode portion 35 within the first opening of the first top electrode sublayer.

[0055] The first contact pad 21 is electrically connected to the first top electrode layer portion 45. In the example configuration shown in FIG5, a first electrode plug 65 is used to achieve the conductive connection between the first contact pad 21 and the first top electrode layer portion 45. The first contact pad 21 is not electrically connected to the second top electrode layer portion 47.

[0056] The second contact pad 23 is electrically connected to the second top electrode layer portion 47 (only one of these is shown in FIG. 5). In the example configuration shown in FIG. 5, the conductive connection between the second contact pad 23 and the second top electrode layer portion 47 is achieved using the second electrode plug 67. The second contact pad 23 is not electrically connected to the first top electrode layer portion 45.

[0057] The first contact pad 21 and the second contact pad 23 can be at the same vertical height relative to the substrate 27.

[0058] Figure 8 This is a flowchart illustrating an example method for manufacturing the energy storage device 11. As indicated, further refer to Figures 5, 6A to... Figure 6C as well as Figures 7A to 7B .

[0059] In the first step 801, a non-conductive substrate 27 is provided having a bottom electrode layer 33, which is patterned to include at least one first bottom electrode layer portion 35 and at least one second bottom electrode layer portion 37 electrically separated from the first bottom electrode layer portion 35.

[0060] In the subsequent step 802, a first plurality of conductive nanostructures 39 are provided on each first bottom electrode layer portion 35 such that each of the first plurality of conductive nanostructures 39 extends substantially vertically from the first bottom electrode layer portion 35, and a second plurality of conductive nanostructures 39 are provided on each second bottom electrode layer portion 37 such that each of the second plurality of conductive nanostructures 39 extends substantially vertically from the second bottom electrode layer portion 37.

[0061] An 803 conformal conductive control layer 41 is applied to each of the first plurality of conductive nanostructures 39 and each of the second plurality of conductive nanostructures 39.

[0062] Then, an 804 top electrode layer 43 is provided on the conductive control layer 41 by providing at least one first top electrode layer portion 45 and at least one second top electrode layer portion 47 on the conductive control layer 41.

[0063] At least one first top electrode layer portion 45 is provided on at least one portion of the conductive control layer 41 covering each of the first plurality of conductive nanostructures 39 and directly on a portion 55 of the second bottom electrode layer portion 37, such that each first top electrode layer portion 45 is conductively connected to and conductively separated from the corresponding second bottom electrode layer portion 37.

[0064] At least one second top electrode layer portion 47 is provided on at least one portion of the conductive control layer 41 covering each of the second plurality of conductive nanostructures 39 and directly on portion 53 of the first bottom electrode layer portion 35, such that each second top electrode layer portion 47 is conductively connected to the corresponding first bottom electrode layer portion 35 and is conductively separated from each second bottom electrode layer portion 37 and from each first top electrode layer portion 45.

[0065] Figure 9 This is a flowchart illustrating an example method for manufacturing the energy storage device 11, and Figures 10A to 10K schematically shown Figure 9 The different steps of the method are described. See further reference to Figures 5, 6A, and 6B as indicated. Figure 6C as well as Figures 7A to 7B .

[0066] In the first step 901, a non-conductive substrate 27 with a patterned bottom electrode layer 33 is provided. According to an example, the substrate 27 may be a silicon substrate. A continuous metal layer may be applied, for example, including a sputtered metal layer stack (which may include, for example, a thin Ti layer and a thin TiW layer), and a W layer applied on the sputtered metal layer stack by CVD. Other metals may also be used, such as Ti, Al, Si, Ni, Pt, or Cr, or combinations thereof. For example, photolithography and dry etching can then be used to form the substrate. Figure 10A The patterned bottom electrode layer 33 shown includes at least one first bottom electrode layer portion 35 and at least one second bottom electrode layer portion 37. To facilitate subsequent nanostructure growth, additional conductive layers 69 may optionally be sequentially applied onto the patterned bottom electrode layer 33, such as... Figure 10B As illustrated in the diagram.

[0067] In the subsequent step 902, a first plurality of conductive nanostructures 39 are provided on each first bottom electrode layer portion 35 such that each of the first plurality of conductive nanostructures 39 extends substantially perpendicularly from the first bottom electrode layer portion 35. A second plurality of conductive nanostructures 39 are provided on each second bottom electrode layer portion 37 such that each of the second plurality of conductive nanostructures 39 extends substantially perpendicularly from the second bottom electrode layer portion 37.

[0068] As a first part of the process of providing the nanostructure 39, a patterned catalyst layer 71 can be formed on the patterned bottom electrode layer 33. In this particular example, the patterned catalyst layer 71 is provided on the additional layer 69.

[0069] For example, a suitable deposition technique, such as PVD, sputtering, or CVD, can first be used to deposit a continuous layer of suitable catalyst material. Subsequently, the continuous layer can be patterned using patterning techniques known per se to form a patterned catalyst layer 71 defining the desired locations for nanostructure growth, such as... Figure 10C As illustrated schematically. Suitable materials for catalyst layer 71 may include, for example, nickel, iron, platinum, palladium, nickel silicide, cobalt, molybdenum, gold or alloys thereof, or combinations thereof with other materials (e.g., silicon).

[0070] Then, nanostructures 39 are grown on catalyst layer 71, such as... Figure 10DAs schematically shown. Vertically grown carbon nanofibers (CNFs) may be particularly suitable for energy storage devices 11. The use of vertically grown nanostructures 39 allows for extensive customization of the properties of nanostructures 39. For example, growth conditions can be selected to achieve a morphology that gives each nanostructure 39 a large surface area, which in turn can increase the charge storage capacitance or capacitance per 2D footprint. As an alternative to CNFs, the nanostructures can be metallic carbon nanotubes or carbide-derived carbon nanostructures, nanowires such as copper, aluminum, silver, silicides, or other types of nanowires. Advantageously, catalyst materials and growth gases, etc., can be selected in a manner known per se to achieve so-called tip growth of nanostructures 39, which can produce a catalyst layer material at the tip of the nanostructure 39. After the growth of nanostructures 39, the uncovered additional metal layer 69 is removed, for example, using maskless dry etching, to obtain Figure 10E The configuration is shown schematically in the diagram.

[0071] A 903 conductive control layer 41 is then provided using a deposition technique, resulting in conformal coverage of the conductive nanostructure 39, as well as the uncovered portions of the bottom electrode layer 33 and the uncovered portions of the substrate 27. For example, ALD deposition can be used to form the conductive control layer 41 as an oxide stack. The conductive control layer 41 can be made, for example, of a so-called high-k dielectric. High-k dielectric materials can be, for example, HfOx, TiOx, TaOx, or other known high-k dielectrics. Alternatively, the conductive control layer 41 can be polymer-based, such as polypropylene, polystyrene, poly(p-xylene), par-p-xylene, etc. Other known dielectric materials, such as SiOx or SiNx, can also be used as the conductive control layer 41. Figure 10F In the diagram, the conductive control layer 41 is schematically shown as a group that collectively covers the nanostructures 39. It should be noted that this is for illustrative purposes only, and the conductive control layer 41 conformally covers each individual nanostructure 39, as indicated in Figure 6A.

[0072] In the next step 904, the conductivity control layer 41 is conformally covered with the first top electrode sublayer 61 to form a stacked layer configuration including the conductivity control layer 41 and the first top electrode layer 61. For example, the first top electrode sublayer 61 can be deposited using ALD (atomic layer deposition). For example, a thin layer of TiN (or the like) can be deposited. Figure 10G The resulting structure is schematically shown in the diagram. Figure 10G In the diagram, the first top electrode sublayer 61 is schematically shown as a group that collectively covers the nanostructures 39. It should be noted that this is for illustrative purposes only, and the first top electrode sublayer 61 conformally covers each individual nanostructure 39, as indicated in Figure 6A.

[0073] Then, in step 905, the stacked layer configuration formed by the conductive control layer 41 and the first top electrode sublayer 61 is patterned by removing the stacked layer configuration above a portion 53 of the first bottom electrode layer portion 35 to expose the first bottom electrode layer portion 35 and removing the stacked layer configuration above a portion 55 of the second bottom electrode layer portion 37 to expose the second bottom electrode layer portion 37. Figure 10H The cross-sectional view shows one or more portions 55 of the second bottom electrode layer portion 37 being exposed, but one or more portions 53 of the first bottom electrode layer portion 35 being exposed are... Figure 10H It is not visible in the cross-sectional view. See also Figures 6B to... Figure 6C as well as Figures 7A to 7B .

[0074] Then, a second top electrode sublayer 63 is used to cover the stacked layer configuration formed by the conductive control layer 41 and the first top electrode sublayer 61, the exposed portion 53 of the first bottom electrode layer portion 35, and the exposed portion 55 of the second bottom electrode layer portion 37. The second top electrode sublayer 63 can be, for example, a metal layer, such as a W layer deposited using CVD or any other suitable deposition technique. Figure 10I The resulting configuration is illustrated schematically. Figure 10I In the diagram, the second top electrode sublayer 63 is schematically shown as a group that collectively covers the nanostructures 39. It should be noted that this is for illustrative purposes only, and the second top electrode sublayer 63 conformally covers each individual nanostructure 39, as indicated in Figure 6A.

[0075] Then, along the boundary line 73 between the adjacent first top electrode layer portion 45 and the second electrode layer portion 47, the first top electrode sublayer 61 and the second electrode sublayer 63 are selectively removed, thereby defining the first top electrode layer portion 45 and the second top electrode layer portion 47. Figure 10J It is indicated schematically in the text.

[0076] Finally, in step 908, the energy storage component 11 is completed by depositing encapsulation material 25 and forming first contact pads 21 and second contact pads 23. The contact pads can be formed using the BEOL process, which is known per se. Figure 10K A typical example is shown in the figure.

[0077] Those skilled in the art will recognize that the present invention is by no means limited to the preferred embodiments described above. Rather, many modifications and variations are possible within the scope of the appended claims.

[0078] In the claims, the word "comprising" does not exclude other elements or steps, and the indefinite articles "a" or "an" do not exclude a plurality. A single processor or other unit can perform the functions of several items recited in the claims. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measures cannot be used advantageously. Any reference numerals in the claims should not be construed as limiting the scope.

Claims

1. An energy storage device, comprising: A bottom electrode layer, the bottom electrode layer comprising a first bottom electrode layer portion and a second bottom electrode layer portion electrically separated from the first bottom electrode layer portion; First plurality of conductive vertical nanostructures, the first plurality of conductive vertical nanostructures extending from the first bottom electrode layer portion and conductively connected to the first bottom electrode layer portion; The second plurality of conductive vertical nanostructures extend from the second bottom electrode layer portion and are conductively connected to the second bottom electrode layer portion; A conductive control layer conformally covers each of the first plurality of conductive vertical nanostructures and each of the second plurality of conductive vertical nanostructures; as well as The top electrode layer includes: A first top electrode layer portion, the first top electrode layer portion being electrically separated from the first bottom electrode layer portion via the conductive control layer; and The second top electrode layer portion is electrically separated from the second bottom electrode layer portion and electrically separated from the first top electrode layer portion via the conductive control layer. The first top electrode layer portion is directly disposed on a portion of the second bottom electrode layer portion, thereby being electrically connected to the second bottom electrode layer portion; and The second top electrode layer portion is disposed directly on a portion of the first bottom electrode layer portion, thereby being electrically connected to the first bottom electrode layer portion.

2. The energy storage device according to claim 1, wherein: The conductive control layer has a first opening on the portion of the first bottom electrode layer and a second opening on the portion of the second bottom electrode layer; The first top electrode layer portion is directly disposed on the portion of the second bottom electrode layer portion within the second opening of the conductive control layer; as well as The second top electrode layer portion is directly disposed on the portion of the first bottom electrode layer portion within the first opening of the conductive control layer.

3. The energy storage device according to claim 2, wherein, The top electrode layer includes: A first top electrode sublayer conformally covers the conductive control layer; and A second top electrode sublayer conformally covers the first top electrode sublayer.

4. The energy storage device according to claim 3, wherein: The first top electrode sublayer has a first opening on the portion of the first bottom electrode layer and a second opening on the portion of the second bottom electrode layer; The second top electrode sublayer of the first top electrode portion is directly disposed on the portion of the second bottom electrode layer portion within the second opening of the first top electrode sublayer; as well as The second top electrode sublayer of the second top electrode portion is directly disposed on the portion of the first bottom electrode layer portion within the first opening of the first top electrode sublayer.

5. The energy storage device according to any one of the preceding claims, wherein: The nanostructures of the first plurality of conductive vertical nanostructures grow from the first bottom electrode layer portion. as well as The second plurality of conductive vertical nanostructures grow from the second bottom electrode layer portion.

6. The energy storage device according to any one of the preceding claims, wherein, The first plurality of conductive vertical nanostructures and the second plurality of conductive vertical nanostructures are carbon nanofibers.

7. The energy storage device according to any one of the preceding claims, wherein, The conductive control layer is made of a solid dielectric material.

8. The energy storage device according to any one of claims 1 to 6, wherein, The conductive control layer is an electrolyte.

9. The energy storage device according to any one of the preceding claims, wherein, The energy storage device includes a non-conductive substrate, and the bottom electrode layer is supported by the non-conductive substrate.

10. The energy storage device according to any one of the preceding claims, wherein, The energy storage device further includes: A first contact pad for external electrical connection of the energy storage device, the first contact pad being electrically connected to the first top electrode layer portion; and The second contact pad is used for external electrical connection of the energy storage device, and the second contact pad is electrically connected to the second top electrode layer portion.

11. The energy storage device according to claim 10, wherein: The first contact pad is electrically connected to the first top electrode layer portion directly above the first plurality of conductive vertical nanostructures; as well as The second contact pad is electrically connected to the second top electrode layer portion directly above the second plurality of conductive vertical nanostructures.

12. The energy storage device according to claim 10 or 11, wherein: The energy storage device includes an electrically insulating encapsulating material that at least partially forms the outer boundary surface of the energy storage device; as well as Each of the first contact pad and the second contact pad at least partially forms the outer boundary surface of the energy storage device.

13. An electronic system comprising: A circuit board having a circuit board conductor pattern, the circuit board having circuit board pads included in the circuit board conductor pattern; A semiconductor component having an active circuit system, and component pads of the active circuit system coupled to the semiconductor component, the component pads being connected to the circuit board pads of the circuit board substrate; A power source interface for receiving power from a power source, the power source interface being connected to the conductor pattern of the circuit board; as well as The energy storage device according to any one of the preceding claims is electrically connected to a first component pad of the semiconductor component and electrically connected to a second component pad of the semiconductor component.

14. A method for manufacturing an energy storage device, comprising: A non-conductive substrate is provided having a bottom electrode layer, the bottom electrode layer being patterned to include a first bottom electrode layer portion and a second bottom electrode layer portion conductively separated from the first bottom electrode layer portion; A first plurality of conductive nanostructures are provided on the first bottom electrode layer portion in such a manner that each of the first plurality of conductive nanostructures extends substantially perpendicularly from the first bottom electrode layer portion. A second plurality of conductive nanostructures are provided on the second bottom electrode layer portion in such a manner that each of the second plurality of conductive nanostructures extends substantially perpendicularly from the second bottom electrode layer portion; A conformal conductive control layer is applied on the first plurality of conductive nanostructures and on the second plurality of conductive nanostructures; as well as A top electrode layer is provided, including: A first top electrode layer portion is provided on a portion of the conductive control layer covering the first plurality of conductive nanostructures and directly on a portion of the second bottom electrode layer portion in such a way that the first top electrode layer portion is conductively connected to the second bottom electrode layer portion and conductively separated from the first bottom electrode layer portion; as well as A second top electrode layer portion is provided on a portion of the conductive control layer covering the second plurality of conductive nanostructures and directly on a portion of the first bottom electrode layer portion in such a way that the second top electrode layer portion is conductively connected to the first bottom electrode layer portion and conductively separated from the second bottom electrode layer portion and conductively separated from the first top electrode layer portion.

15. The method according to claim 14, wherein, Providing the top electrode layer includes: The conductive control layer is conformally covered with a first top electrode sublayer to form a stacked layer configuration including the conductive control layer and the first top electrode layer; Remove the stacked layer configuration on the portion of the first bottom electrode layer portion to expose the portion of the first bottom electrode layer portion, and remove the stacked layer configuration on the portion of the second bottom electrode layer portion to expose the portion of the second bottom electrode layer portion; The stacked layer configuration, portions of the first bottom electrode layer portion, and portions of the second bottom electrode layer portion are covered by a second top electrode sublayer; and The first top electrode sublayer and the second electrode sublayer are selectively removed to form the first top electrode layer portion and the second electrode layer portion.

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