Semiconductor laser element

Abstract

Provided is a semiconductor laser element in which peeling of an insulating film or a wiring is difficult to occur. A laser waveguide (200) extends along a first direction (y direction). A groove (190) extending along the first direction (y direction) is formed on a surface of the semiconductor laser element (100). The groove (190) includes, in a cross section, a first portion (192) in which a width in a second direction (x direction) is relatively narrow and a second portion (194) in which a width in the second direction (x direction) is relatively wide and which is located deeper than the first portion (192). In at least a part of the first direction (y direction), a surface of the groove (190) is continuously covered with a wiring (Lc) for connection as metal or an insulating film (160) for contact as an insulating material in a direction crossing the groove (190).

Description

Technical Field

[0001] This disclosure relates to semiconductor laser devices. Background Technology

[0002] Electronic devices such as printers and head-mounted displays (HMDs) use semiconductor lasers as light sources. Multi-beam semiconductor laser elements are employed to address the increasing resolution requirements of electronic devices processing such images.

[0003] To miniaturize lenses and MEMS mirrors, efforts are being made to narrow the beam spacing. If the beam spacing is narrower than the diameter of the solder balls for wire bonding or the width of the solder pattern for chip bonding, the area for direct wire bonding or chip bonding of the electrodes on the upper surface of the laser waveguide cannot be guaranteed. As a result, the electrode pads need to be formed close to the end of the chip (semiconductor substrate). In this case, the connection between the electrode pads and the laser waveguide is made by wiring (layered wiring) across the laser waveguide (Patent Document 1).

[0004] Specifically, the connection wiring connecting the power supply electrode (P-side electrode) formed on the upper surface of the central laser waveguide and the electrode pads traverses the adjacent laser waveguides. If the intersection of the connection wiring and the laser waveguide is of interest, an interlayer insulating film is inserted between the connection wiring and the power supply electrode of the laser waveguide to form a stacked wiring structure.

[0005] Prior art literature

[0006] Patent documents

[0007] Patent Document 1: Japanese Patent Application Publication No. 2000-269601

[0008] Patent Document 2: Japanese Patent Application Publication No. 2010-135731 Summary of the Invention

[0009] -The problem the invention aims to solve-

[0010] The inventors conducted research on multi-beam semiconductor laser elements with narrow beam spacing and recognized the following issues.

[0011] The formation of the connecting wires that intersect with the power supply electrodes requires a complex process, which can easily lead to the peeling of the interlayer insulation film and the connecting wires. In particular, the interlayer insulation film and the connecting wires are prone to peeling at the top of a substrate with uneven surfaces, such as above a ridge, or at locations where they are made of dissimilar materials with different coefficients of thermal expansion.

[0012] Such problems are not limited to wiring in multi-beam semiconductor laser elements; they can also occur in wiring, pads, and insulating films in other semiconductor laser elements.

[0013] One aspect of this disclosure is made in view of this problem, and one of its exemplary purposes is to provide a semiconductor laser element that is difficult to strip from insulating films and wiring.

[0014] -Methods for solving problems-

[0015] One aspect of this disclosure relates to a semiconductor laser element. The semiconductor laser element includes a laser waveguide. A groove extending along a first direction is formed on the surface of the semiconductor laser element. In cross-section, the groove includes a first portion with a relatively narrow width in a second direction and a second portion located deeper than the first portion and with a relatively wide width in the second direction. In at least a portion of the groove in the first direction, the surface of the groove is covered by a metal or insulating material that extends across the groove along the second direction.

[0016] Furthermore, structures formed by arbitrarily combining the above structural elements, structures that embody the structural elements of this disclosure, and structures that represent the mutual substitution between methods, apparatuses, systems, etc., are also valid forms of this disclosure.

[0017] -Invention Effects-

[0018] According to one aspect of this disclosure, a semiconductor laser element that is difficult to strip, resulting in the production of insulating films and wiring, can be provided. Attached Figure Description

[0019] Figure 1 This is a perspective view of the semiconductor laser element involved in Embodiment 1.

[0020] Figure 2 yes Figure 1 A cross-sectional view of a portion of a semiconductor laser element.

[0021] Figure 3 This is an enlarged view of the groove.

[0022] Figure 4 This is a cross-sectional view of the groove involved in variation 1.1.

[0023] Figure 5 This is a cross-sectional view of the groove involved in variation 1.2.

[0024] Figure 6 This is a cross-sectional view of the semiconductor laser element involved in Variation 1.3.

[0025] Figure 7 This is a cross-sectional view of the semiconductor laser element involved in Variation 1.4.

[0026] Figure 8 This is a cross-sectional view of the semiconductor laser element involved in Variation 1.5.

[0027] Figure 9This is a cross-sectional view of the semiconductor laser element involved in Embodiment 2.

[0028] Figure 10 This is a cross-sectional view of the groove involved in variation 2.1. Detailed Implementation

[0029] (Summary of the implementation method)

[0030] A summary of several exemplary embodiments of this disclosure is provided. This summary serves as a prelude to the detailed description that follows, or for the purpose of providing a basic understanding of the embodiments. This summary simplifies the explanation of several concepts in one or more embodiments and does not limit the breadth of the invention or disclosure. Furthermore, this summary is not a comprehensive overview of all embodiments considered, nor does it limit the essential components of the embodiments. For convenience, "an embodiment" is sometimes used to refer to one or more embodiments (examples, variations) disclosed in this specification.

[0031] One embodiment of the semiconductor laser element includes a laser waveguide extending along a first direction. A groove extending along the first direction is formed on the surface of the semiconductor laser element. In cross-section, the groove includes a first portion with a relatively narrow width in a second direction and a second portion located deeper than the first portion and with a relatively wide width in the second direction. In at least a portion of the groove in the first direction, the surface of the groove is covered by a metal or insulating material that extends across the groove along the second direction.

[0032] In one embodiment, the groove may also have a protrusion on the side corresponding to the first part.

[0033] In one embodiment, the groove can also be formed in a stacked growth layer, with the first and second portions made of different materials.

[0034] In one embodiment, the first part may also be an active layer.

[0035] In one embodiment, the first part may also be a contact layer.

[0036] In one embodiment, the groove may also have a conical shape in which the width narrows as it approaches the surface in cross-section.

[0037] In one embodiment, the difference in width between the first portion and the second portion may also be greater than 10 nm and less than 1 μm.

[0038] In one embodiment, the trench may also be deeper than the active layer.

[0039] In one embodiment, the trench may also be shallower than the active layer.

[0040] In one embodiment, the groove may also be filled with at least one of a metal and an insulating material.

[0041] In one embodiment, the laser waveguide may also extend along the first direction.

[0042] In one embodiment, the laser waveguide may also extend along the second direction. In this case, the groove may also be a light-shielding groove.

[0043] In one embodiment, multiple laser waveguides may be formed adjacent to each other in a second direction within a laser region on a semiconductor substrate, and multiple grooves may be formed next to the multiple laser waveguides.

[0044] In one embodiment, power supply electrodes may also be formed on multiple laser waveguides.

[0045] The semiconductor laser element may also include: a plurality of connecting wires corresponding to a plurality of laser waveguides, each extending along a second direction and connected to a power supply electrode of the corresponding laser waveguide; and an interlayer insulating film formed to include portions where the connecting wires and power supply electrodes, which should be mutually insulated, intersect. The surface of the trench may also be covered by the interlayer insulating film or the connecting wires.

[0046] (Implementation Method)

[0047] Hereinafter, this disclosure will be described based on preferred embodiments and with reference to the accompanying drawings. Identical or equivalent constituent elements, components, and processes shown in the various drawings will be labeled with the same symbols, and repetitive descriptions will be omitted where appropriate. Furthermore, the embodiments are not limiting of the disclosure, but are illustrative; all features and combinations thereof described in the embodiments may not be the essential content of the disclosure.

[0048] The dimensions (thickness, length, width, etc.) of the components shown in the accompanying drawings are sometimes appropriately enlarged or reduced for ease of understanding. Moreover, the dimensions of multiple components do not necessarily indicate their size relationship. In the accompanying drawings, even if a component A is depicted as thicker than other components B, component A may still be thinner than component B.

[0049] (Implementation Method 1)

[0050] Figure 1 This is a perspective view of the semiconductor laser element 100 according to Embodiment 1. The semiconductor laser element 100 is an end-face emitting type semiconductor laser element, which is a multi-beam semiconductor laser with multiple, i.e., m (m≥3) emitters. In this embodiment, the number of emitters m is 4.

[0051] The semiconductor laser element 100 includes an N-type semiconductor substrate 110 and a stacked growth layer 102 formed on the N-type semiconductor substrate 110. The stacked growth layer 102 includes an N-type cladding layer 120, a light-emitting layer (active layer) 130, a P-type cladding layer 140, and a P-type contact layer 142, which are sequentially stacked on the N-type semiconductor substrate 110. The light-emitting layer 130 includes an N-type guiding layer (lower guiding layer), an active layer composed of a quantum well layer, and a P-type guiding layer (upper guiding layer). The materials of the N-type semiconductor substrate 110 and the stacked growth layer 102 can be selected according to the required oscillation wavelength, and are not particularly limited in this disclosure.

[0052] The semiconductor laser element 100 has a central laser region 902 and pad regions 904 and 906. In the laser region 902, m strip-shaped laser waveguides 200_1 to 200_m are formed, each extending along a first direction (y direction) and adjacent to each other in a second direction (x direction).

[0053] A waveguide structure for confining light is formed in the stacked growth layer 102. The cleaved surfaces at both ends of this waveguide structure serve as mirrors, forming a Fabry-Perot type laser waveguide 200. In this example, four laser waveguides 200_1 to 200_4 are formed, emitting beams BM1 to BM4 from the front end face (emission end face) S1 in the y-direction. The front end face S1 and the rear end face S2 of each laser waveguide 200 are coated to impart the desired reflectivity.

[0054] In this embodiment, the waveguide structure is a ridge waveguide, and a ridge structure (mesa structure) 104 extending along the y direction is formed in the P-type cladding layer 140 of the stacked growth layer 102.

[0055] An insulating film 160 for contact is formed on the upper surface of the semiconductor laser element 100. A rectangular opening with the y-direction as its longer side is formed on the upper surface of the laser waveguides 200-1 to 200-n, specifically on the upper surface of the ridge structure 104, of the insulating film 160 for contact. A power supply electrode (P-side electrode) 150 is formed along this opening, thereby connecting to the P-type contact layer 142. The power supply electrodes 150 are electrically insulated from each other so that the laser waveguide 200 can be driven independently. Furthermore, the P-type semiconductor portion has resistance between each emitter, enabling independent electrical drive. In this embodiment, the power supply electrode 150 is a strip-shaped electrode extending along the y-direction on the upper surface of the laser waveguide 200.

[0056] An N-side electrode 152 is formed on the back side of the laser waveguide 200.

[0057] In order to supply power to the laser waveguide 200, a plurality of chip-side electrode pads (hereinafter referred to as electrode pads) Pe1 to Pe4 and a plurality of connection wirings Lc1 to Lc4 are provided corresponding to the plurality of laser waveguides 200_1 to 200_4.

[0058] Multiple electrode pads Pe1 to Pe4 are formed in pad regions 904 and 906 adjacent to laser region 902 in the x direction. For electrode pads Pe1 to Pe4, bonding wires are connected when the contacts are mounted upwards, and solder is connected when the contacts are mounted downwards.

[0059] Each connection uses wiring Lci (i = 1, 2, 3, 4) to electrically connect the power supply electrode 150 of the corresponding laser waveguide 200_i to the corresponding electrode pad Pi.

[0060] For the two inner laser waveguides (200_2, 200_3) among the plurality of laser waveguides 200_1 to 200_4, the power supply electrode 150 of the outer laser waveguide 200 is traversed by connecting wires Lc2 and Lc3. Specifically, the connecting wire Lc2 traverses the power supply electrode 150_1 of laser waveguide 200_1. Similarly, the connecting wire Lc3 traverses the power supply electrode 150_4 of laser waveguide 200_4.

[0061] The interlayer insulating film 170 is formed to include the intersection of the connecting wire Lc and the power supply electrode 150, which should be insulated from each other, to ensure electrical insulation between the connecting wire Lc2 and the power supply electrode 150-1 and between the connecting wire Lc3 and the power supply electrode 150-4.

[0062] In this embodiment, the interlayer insulating film 170 is provided independently at each location where the connecting wire Lc and the power supply electrode 150 intersect. Specifically, the interlayer insulating film 170-1 is provided at the location where the connecting wire Lc2 and the power supply electrode 150-1 intersect, and the interlayer insulating film 170-4 is provided at the location where the connecting wire Lc3 and the power supply electrode 150-4 intersect.

[0063] At least one groove 190 extending in a strip shape along a first direction (y-direction) is formed on the upper surface of the semiconductor laser element 100. In this example, the groove 190 is formed adjacent to each laser waveguide 200. As explained below, the groove 190 has the function of suppressing the peeling of insulating films, wiring, and pads formed on the upper surface of the semiconductor laser element 100. In addition, the groove 190 can also serve as a separation groove for thermally and / or electrically separating adjacent laser waveguides 200.

[0064] Figure 2 yes Figure 1A cross-sectional view of a portion of a semiconductor laser element 100. In the cross-section, the groove 190 includes a first portion 192 that is relatively narrow in the second direction (x-direction) and a second portion 194 that is located deeper than the first portion 192 and is relatively wide in the second direction. The first portion 192 is a protrusion extending from the side of the groove, which has a rectangular cross-section. When the semiconductor laser element 100 is viewed from above along the z-direction, a portion of the bottom surface of the groove 190 is obscured by the protrusion. The difference in width between the first portion 192 and the second portion 194 is preferably 10 nm or more and 1 μm or less.

[0065] In this embodiment, at least a portion of the surface of at least one groove 190 in the y-direction is continuously covered in the direction traversing the groove 190, in other words, the x-direction, by any one of a metal, an inorganic insulating material, or an organic insulating material. Figure 2 In this process, the surfaces of multiple grooves 190a to 190c are covered by a contact insulating film 160. Furthermore, in grooves 190b and 190c, connection wiring Lc3 is formed on the contact insulating film 160.

[0066] Figure 3 This is an enlarged view of groove 190. Groove 190 is formed in a stacked growth layer 102 of crystalline material, with the first portion 192 and the second portion 194 made of different materials. Groove 190 is formed by etching after the stacked growth layer 102 is formed and before the contact insulating film 160 is formed. At this time, by utilizing the different etching rates between the dissimilar materials, the first portion 192 and the second portion 194 can be formed as protruding structures. Figure 3 In the example, the depth of the groove 190 is deeper than that of the light-emitting layer 130. The first portion 192 is the light-emitting layer 130, and the second portion 194 is the N-type coating layer 120. Here, the width difference between the first portion 192 and the second portion 194 is preferably 10 nm or more and 1 μm or less. By setting the width difference between the first portion 192 and the second portion 194 to the aforementioned size range, even if stress is introduced into the contact insulating film in the direction of the chip's upper surface, the film in the groove will be trapped in the protrusions within the groove, thereby suppressing film peeling. At this time, if the width difference between the first portion 192 and the second portion 194 is small, sufficient anti-peeling effect cannot be obtained. Furthermore, if the width difference between the first portion 192 and the second portion 194 is too large, it is difficult to obtain sufficient film coverage in the protrusions, and peeling is more likely to occur.

[0067] The above describes the structure of the semiconductor laser element 100.

[0068] According to the semiconductor laser element 100, a first portion 192 with a protruding shape engages with a contact insulating film 160 in grooves 190a to 190c. In other words, the first portion 192 functions as an anchor to improve connectivity. Therefore, the combination of the first portion 192 and the second portion 194 is called an anchoring structure, and the groove having the anchoring structure is also called an anchoring groove.

[0069] Furthermore, by forming the contact insulating film 160 thinner, the contact insulating film 160 can have an uneven shape along the base of the grooves 190a to 190c. Thus, in the grooves 190b and 190c, the first portion 192 also functions as an anchor to improve the tightness of the connection wiring Lc.

[0070] Next, the variations will be explained.

[0071] (Variation 1.1)

[0072] Figure 4 This is a cross-sectional view of the groove 190A involved in Modification 1.1. In Modification 1.1, and Figure 3 Similarly, groove 190A is formed in the laminated growth layer 102. The cross-sectional shape of groove 190A is trapezoidal, exhibiting a conical shape that widens as it deepens. In this configuration, the shallowest portion of groove 190A is the first portion 192, and the deepest portion is the second portion 194. Figure 4 In this case, the depth of groove 190A is either deeper than that of light-emitting layer 130, or it can be shallower than that of light-emitting layer 130.

[0073] (Variation 1.2)

[0074] Figure 5 This is a cross-sectional view of the groove 190B involved in Modification 1.2. In Modification 1.2, a groove 191 with a rectangular cross-section is formed in the laminated growth layer 102, and an anchoring structure consisting of a first portion 192 and a second portion 194 is formed by the insulating layer 193 thereon. For example, the insulating layer 193 with the anchoring structure can be formed using a contact insulating film 160. The contact insulating film 160 can be a CVD insulating film (CVD oxide film) formed by chemical vapor deposition (CVD), or it can be formed by sputtering or atomic layer deposition (ALD).

[0075] In this embodiment, after the groove 191 is formed, a CVD insulating film, serving as a contact insulating film 160, is formed. The CVD insulating film has the property that the deposition rate at the corners is higher than the deposition rate at the flat portions. Therefore, the CVD insulating film has a protruding structure at the corner of the entrance to the groove 191, enabling the formation of a narrow first portion 192. Figure 5 In this case, the groove 190B is deeper than the light-emitting layer 130, but it is not limited to this; the groove 190B can also be shallower than the light-emitting layer 130.

[0076] Furthermore, by forming another insulating film and wiring 180 on top of the CVD insulating film with protruding structures, the other insulating film and wiring 180 become difficult to peel off. In addition, the CVD insulating film has high adhesion to the semiconductor material as the substrate, thus achieving sufficient adhesion strength for the rectangular cross-section trench, resulting in a low possibility of peeling.

[0077] (Variation 1.3)

[0078] Figure 6 This is a cross-sectional view of the semiconductor laser element 100C according to Modification 1.3. In this modification, an interlayer insulating film 170 is formed on each laser waveguide 200. An opening is formed in the interlayer insulating film 170_i (i = 1, 2, 3, 4) at the location of the connection wiring Lc_i and the power supply electrode 150_i that should be connected.

[0079] According to this modified example 1.3, by forming the connecting wiring Lc3 along the grooves 190b and 190c, the adhesion to the contact insulating film 160 can be improved, making it difficult to peel off.

[0080] (Variation 1.4)

[0081] Figure 7 This is a cross-sectional view of the semiconductor laser element 100D involved in Modification 1.4. In this modification, with... Figure 6 Similarly, multiple laser waveguides 200 are covered by an interlayer insulating film 170D. Figure 6 The difference is that the interlayer insulating film 170D is continuous.

[0082] In this structure, the interlayer insulating film 170D is formed along grooves 190b and 190c. Therefore, with Figure 6 Compared to the previous structure, the interlayer insulating film 170D becomes difficult to peel off. Furthermore, the connecting wiring Lc3 is also formed on the interlayer insulating film 170D along the grooves 190b and 190c, thus becoming difficult to peel off.

[0083] (Variation 1.5)

[0084] Figure 8This is a cross-sectional view of the semiconductor laser element 100E involved in Modification 1.5. In this modification, with... Figure 7 Similarly, the interlayer insulating film 170E is continuously formed across multiple laser waveguides 200. (And...) Figure 7 The difference lies in that the groove 190 is filled with an interlayer insulating film 170E. This structure further enhances the adhesion of the interlayer insulating film 170E to the laminated growth layer 102.

[0085] (Implementation Method 2)

[0086] In Embodiment 1 and its variations, a ridge waveguide has been described, but the construction of the waveguide is not limited to this.

[0087] Figure 9 This is a cross-sectional view of the semiconductor laser element 100F according to Embodiment 2. Figure 9 In the middle, the laser waveguide 200 does not have a ridge structure 104.

[0088] The construction of the groove 190 in Embodiment 2 is not particularly limited, and the construction of the groove 190 described in Embodiment 1 can be used.

[0089] According to Embodiment 2, similarly to Embodiment 1, it is possible to prevent the peeling of the insulating film and wiring. Next, variations related to Embodiment 2 will be described.

[0090] (Variation 2.1)

[0091] Figure 10 This is a cross-sectional view of the groove 190G involved in Modification 2.1. In Embodiment 1 and its modifications, because of the ridge structure 104, the portion where the P-type contact layer 142 is removed is formed on the P-type cladding layer 140. In contrast, in Embodiment 2, the P-type contact layer 142 remains on the surface of the semiconductor laser element 100. In Modification 2.1, the groove 190G is formed on the stacked growth layer 102 of the crystal material including the P-type contact layer 142, and the first portion 192 as a protrusion structure is formed using the P-type contact layer 142.

[0092] Since the P-type contact layer 142 and the P-type cladding layer 140 are dissimilar materials, they have different etching rates. For example, the P-type cladding layer 140 is GaAs, and the N-type cladding layer 120 is AlInP; GaAs has a lower etching rate. Therefore, the first portion 192 can be formed using the P-type cladding layer 140.

[0093] (Other variations)

[0094] The above embodiments are illustrative, and those skilled in the art will understand that various modifications can be made to the combination of the various components and processing techniques of these embodiments. Such modifications will be described below.

[0095] In the above description, the peeling of the interconnect wiring Lc and the interlayer insulating film 170 that forms the substrate in a multi-beam semiconductor laser element has been explained, but the application of the technology disclosed herein is not limited to this. In addition to the interconnect wiring Lc and the interlayer insulating film 170, in cases where easily peelable wiring and insulating films exist, a groove 190 with an anchoring structure is formed around them, and the wiring and insulating film are continuously formed along the groove 190, thereby making peeling difficult. For example, to suppress peeling of the electrode pad Pe, the groove 190 may be formed along the formation area of ​​the electrode pad Pe, and the electrode pad Pe may be extended to form a transverse groove 190.

[0096] The techniques disclosed herein can also be applied to single-beam semiconductor laser elements, even in the presence of easily strippable wiring or insulating films.

[0097] The semiconductor laser element has a grating groove structure adjacent to the laser waveguide. Furthermore, sometimes a light-shielding groove is provided on the exit end face to block light leakage from the grating groove. In this case, the light-shielding groove may also have an anchoring structure as described in the embodiment.

[0098] The embodiments described herein are illustrated using specific terminology, but such description is merely illustrative to aid understanding and does not limit the scope of this disclosure or the claims. The scope of this invention is defined by the claims; therefore, embodiments, examples, and variations not described herein are also included within the scope of this invention.

[0099] -Symbol Explanation-

[0100] 100 Semiconductor Laser Components

[0101] 102 stacked growth layers

[0102] 104 Ridge Structure

[0103] S1 Front end face

[0104] S2 rear end face

[0105] 902 Laser Area

[0106] 904 and 906 pad areas

[0107] 110 N-type semiconductor substrate

[0108] 120 N-type coating

[0109] 130 light-emitting layer

[0110] 140 P-type coating

[0111] 160 Insulating film for contact

[0112] Pe electrode pads

[0113] Lc connection wiring

[0114] 150 Power supply electrode

[0115] 152 N-side electrode

[0116] 154 Insulating film for contact

[0117] 170-layer interlayer insulation film

[0118] 200 laser waveguide.

Claims

1. A semiconductor laser element, characterized in that, Equipped with laser waveguide, A groove extending along a first direction is formed on the surface of the semiconductor laser element. In cross-section, the groove includes a first portion that is relatively narrow in width in a second direction and a second portion that is located deeper than the first portion and is relatively wide in width in the second direction. In at least a portion of the groove in the first direction, the surface of the groove is covered with a metal or insulating material that runs through the groove along the second direction.

2. The semiconductor laser element according to claim 1, wherein, The groove has a protrusion on its side corresponding to the first part.

3. The semiconductor laser element according to claim 2, wherein, The groove is formed in a stacked growth layer, and the first part and the second part are made of different materials.

4. The semiconductor laser element according to claim 3, wherein, The first part is the active layer.

5. The semiconductor laser element according to claim 3, wherein, The first part is the contact layer.

6. The semiconductor laser element according to claim 1, wherein, The groove has a conical shape that narrows as it approaches the surface in cross-section.

7. The semiconductor laser element according to any one of claims 1 to 6, wherein, The difference in width between the first part and the second part is greater than 10 nm and less than 1 μm.

8. The semiconductor laser element according to any one of claims 1 to 6, wherein, The groove is deeper than the active layer.

9. The semiconductor laser element according to any one of claims 1 to 3, wherein, The groove is shallower than the active layer.

10. The semiconductor laser element according to any one of claims 1 to 6, wherein, The groove is filled with at least one of a metal and an insulating material.

11. The semiconductor laser element according to any one of claims 1 to 6, wherein, The laser waveguide extends along the first direction.

12. The semiconductor laser element according to claim 11, wherein, Multiple laser waveguides are formed adjacent to each other in the second direction within a laser region on a semiconductor substrate. Multiple slots are formed next to the multiple laser waveguides.

13. The semiconductor laser element according to any one of claims 1 to 6, wherein, Power supply electrodes are formed on the plurality of laser waveguides. The semiconductor laser element also includes: Multiple connection wirings, corresponding to the multiple laser waveguides, extend along the second direction and are connected to the power supply electrodes of the corresponding laser waveguides; and The interlayer insulating film is formed to include the portions where the connecting wires and the power supply electrodes, which should be mutually insulated, intersect. The surface of the groove is covered by the interlayer insulating film or the wiring for connection.

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