Plasma etching apparatus with adsorption mechanism

Abstract

The embodiment of the present application provides a kind of plasma etching equipment with adsorption mechanism, since adsorption structure includes the adsorption surface with adsorption material, adsorption surface is all connected with adsorption hole, and with the adsorption surface direction along thickness direction back to second process cavity, so that plasma is passed into second process cavity from first process cavity via through hole, plasma can better contact with the adsorption material on the adsorption surface connected with adsorption hole, and group in plasma can be better absorbed.Since adsorption structure is configured to include at least two prismatic structures with different adsorption material adsorption surface, adsorption structure can make with different adsorption material adsorption surface direction along thickness direction back to second process cavity by rotating, realize the switching of the adsorption surface with different adsorption material and the adsorption hole connected with it, shorten the use time of the process adjustment of the plasma etching equipment with adsorption mechanism, and improve production efficiency.

Description

Technical Field

[0001] This application relates to the field of display device manufacturing technology, and in particular to a plasma etching apparatus with an adsorption mechanism. Background Technology

[0002] Organic light-emitting diode (OLED) and flat panel display devices based on light-emitting diode (LED) technologies are widely used in various consumer electronics products such as mobile phones, televisions, laptops, and desktop computers due to their advantages such as high image quality, energy saving, thin body and wide range of applications, becoming the mainstream of display devices.

[0003] As the application scope of flat panel display devices continues to expand, how to improve the production efficiency of display panels is attracting increasing attention from those skilled in the art. Summary of the Invention

[0004] This application provides a plasma etching apparatus with an adsorption mechanism, which has high production efficiency.

[0005] An embodiment of the first aspect of this application provides a plasma etching apparatus with an adsorption mechanism. The plasma etching apparatus includes a process chamber, a sensing electrode, an adsorption mechanism, and a support device. The process chamber is used to contain plasma. The sensing electrode is disposed in the process chamber, dividing the process chamber into a first process chamber and a second process chamber. The sensing electrode has multiple through holes extending along its thickness direction, connecting the first and second process chambers. The adsorption mechanism includes an adsorption structure rotatably connected to the sensing electrode and located on the side of the sensing electrode closer to the first process chamber. The adsorption structure is configured as a prism-shaped structure, including at least two adsorption surfaces with different adsorption materials. Different adsorption materials can adsorb different groups in the plasma. The adsorption structure has adsorption holes, and each adsorption surface is connected to an adsorption hole. The adsorption structure can be rotated so that the adsorption surfaces with different adsorption materials face away from the second process chamber along the thickness direction, thereby adsorbing different groups in the plasma. The support device is located in the second process chamber and is used to support a substrate.

[0006] Because the adsorption structure includes adsorption surfaces with adsorption material, each adsorption surface is connected to adsorption holes, and the adsorption surfaces face away from the second process cavity along the thickness direction, when the sensing electrode applies plasma and it passes through the through holes from the first process cavity to the second process cavity, the plasma can better contact the adsorption material on the adsorption surfaces connected to the adsorption holes. This allows for better adsorption of functional groups in the plasma, achieving control over the amount of functional groups in the plasma. In the above scheme, since the adsorption structure is configured as a prismatic structure including at least two adsorption surfaces with different adsorption materials, when different functional groups in the plasma need to be adsorbed to control their amount, the adsorption structure can be rotated so that the adsorption surfaces with different adsorption materials face away from the second process cavity along the thickness direction. This achieves switching between adsorption surfaces with different adsorption materials and the adsorption holes connected to them, rather than replacing the adsorption structure with different adsorption materials. This reduces the time required to replace functional groups in the adsorbed plasma, shortens the process adjustment time of the plasma etching equipment with the adsorption mechanism, and improves production efficiency.

[0007] According to some embodiments of this application, the plasma etching apparatus with an adsorption mechanism has at least two adsorption surfaces divided into at least two groups, and each group of adsorption surfaces includes two adsorption surfaces arranged opposite to each other; the adsorption materials on the adsorption surfaces of different groups are different.

[0008] According to some embodiments of this application, a plasma etching apparatus with an adsorption mechanism is provided, wherein the prismatic structure includes three sets of adsorption surfaces, and the adsorption materials on the three sets of adsorption surfaces are respectively a material including molybdenum, a material including nickel or titanium, and a material including tungsten.

[0009] According to some embodiments of this application, a plasma etching apparatus with an adsorption mechanism is provided, wherein the adsorption mechanism further includes a driver that is drively connected to the adsorption structure.

[0010] According to some embodiments of this application, a plasma etching apparatus with an adsorption mechanism is provided, wherein a driver is connected to the wall of the process chamber, the end face of the prismatic structure is disposed facing the wall, and the output end of the driver is drivenly connected to the end face of the prismatic structure.

[0011] According to some embodiments of this application, a plasma etching apparatus with an adsorption mechanism is provided, wherein the adsorption structure is provided with a vent hole for communicating with a through hole, the vent hole penetrates the prismatic structure radially, each adsorption surface with adsorption material is connected to a vent hole, and the vent hole communicating with the through hole extends along the thickness direction.

[0012] According to some embodiments of this application, the radius of the vent hole in the plasma etching apparatus with an adsorption mechanism is set to be greater than or equal to the radius of the vent hole.

[0013] According to some embodiments of this application, a plasma etching apparatus with an adsorption mechanism is provided, wherein multiple adsorption structures are provided, and the multiple adsorption structures are sequentially arranged on the induction electrode along a first direction, the first direction being perpendicular to the thickness direction.

[0014] According to some embodiments of this application, a plasma etching apparatus with an adsorption mechanism is provided, in which multiple adsorption structures are arranged at equal intervals along a first direction; in the thickness direction, the projection of at least one through hole is located between the projections of two adjacent adsorption structures.

[0015] According to some embodiments of this application, the plasma etching apparatus with an adsorption mechanism further includes a gas supply device and an exhaust device, wherein the gas supply device is connected to a first process chamber and the exhaust device is connected to a second process chamber.

[0016] The technical solutions provided by the embodiments of this application have at least the following beneficial effects:

[0017] Some embodiments of this application provide a plasma etching apparatus with an adsorption mechanism. This plasma etching apparatus includes a process chamber, a sensing electrode, an adsorption mechanism, and a support device. The process chamber is used to contain plasma. The sensing electrode is disposed in the process chamber, dividing the process chamber into a first process chamber and a second process chamber. The sensing electrode has multiple through holes extending along its thickness direction, connecting the first and second process chambers. The adsorption mechanism includes an adsorption structure rotatably connected to the sensing electrode and located on the side of the sensing electrode closer to the first process chamber. The adsorption structure is configured as a prismatic structure, including at least two adsorption surfaces with different adsorption materials. Different adsorption materials can adsorb different groups in the plasma. The adsorption structure has adsorption holes, and each adsorption surface is connected to an adsorption hole. The adsorption structure can be rotated so that the adsorption surfaces with different adsorption materials face away from the second process chamber along the thickness direction, thereby adsorbing different groups in the plasma. The support device is located in the second process chamber and is used to support a substrate. Because the adsorption structure includes adsorption surfaces with adsorption material, each adsorption surface is connected to adsorption holes, and the adsorption surfaces face away from the second process cavity along the thickness direction, when the sensing electrode applies plasma and it passes through the through holes from the first process cavity to the second process cavity, the plasma can better contact the adsorption material on the adsorption surfaces connected to the adsorption holes. This allows for better adsorption of functional groups in the plasma, achieving control over the amount of functional groups in the plasma. In the above scheme, since the adsorption structure is configured as a prismatic structure including at least two adsorption surfaces with different adsorption materials, when different functional groups in the plasma need to be adsorbed to control their amount, the adsorption structure can be rotated so that the adsorption surfaces with different adsorption materials face away from the second process cavity along the thickness direction. This achieves switching between adsorption surfaces with different adsorption materials and the adsorption holes connected to them, rather than replacing the adsorption structure with different adsorption materials. This reduces the time required to replace functional groups in the adsorbed plasma, shortens the process adjustment time of the plasma etching equipment with the adsorption mechanism, and improves production efficiency. Attached Figure Description

[0018] Other features, objects, and advantages of this application will become more apparent from the following detailed description of non-limiting embodiments with reference to the accompanying drawings, wherein the same or similar reference numerals denote the same or similar features.

[0019] Figure 1 This is a schematic diagram of the structure of a plasma etching apparatus with an adsorption mechanism provided in one embodiment;

[0020] Figure 2 This is a cross-sectional view of the adsorption structure in a plasma etching apparatus with an adsorption mechanism provided in one embodiment;

[0021] Figure 3 This is a top view of the induction electrode and adsorption structure in a plasma etching apparatus with an adsorption mechanism provided in one embodiment;

[0022] Figure 4 This is a schematic diagram of the structure of a plasma etching apparatus with an adsorption mechanism provided in another embodiment;

[0023] Figure 5 This is a schematic diagram of a plasma etching apparatus with an adsorption mechanism provided in another embodiment.

[0024] In the picture:

[0025] 1. Process chamber; 11. First process chamber; 12. Second process chamber; 13. Wall; 2. Induction electrode; 21. Through hole; 3. Adsorption mechanism; 31. Adsorption structure; 311. Adsorption surface; 312. Adsorption hole; 313. Vent hole; 32. Driver; 4. Support device; 5. Substrate; 6. Gas supply device; 7. Exhaust device; X, First direction; Z, Thickness direction. Detailed Implementation

[0026] The features and exemplary embodiments of various aspects of this application will now be described in detail. Numerous specific details are set forth in the following detailed description to provide a comprehensive understanding of this application. However, it will be apparent to those skilled in the art that this application can be implemented without some of these specific details. The following description of embodiments is merely intended to provide a better understanding of this application by illustrating examples. In the accompanying drawings and the following description, at least some well-known structures and techniques are not shown to avoid unnecessarily obscuring the application; and, for clarity, the dimensions of some structures may be exaggerated. Furthermore, the features, structures, or characteristics described below can be combined in any suitable manner in one or more embodiments.

[0027] In the description of this application, it should be noted that, unless otherwise stated, "a plurality of" means two or more; the terms "upper," "lower," "left," "right," "inner," "outer," etc., indicating orientation or positional relationships are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this application. Furthermore, the terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0028] The directional terms appearing in the following description refer to the directions shown in the figures and are not intended to limit the specific structure of the embodiments of this application. It should also be noted in the description of this application that, unless otherwise explicitly specified and limited, the terms "installation" and "connection" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0029] As OLED and LED-based flat panel display devices gain increasing attention for their advantages such as high image quality, energy saving, and thin body, they are widely used in various consumer electronics products such as mobile phones, televisions, laptops, and desktop computers. The application range of display panels is becoming wider and wider, and display panels have become the mainstream in display devices.

[0030] With the expanding applications of display panels and the continuous improvement of people's living standards, the market demand for display panels is increasing. To increase display panel production capacity, improving production efficiency is receiving increasing attention from those skilled in the art.

[0031] Plasma etching is a key technology in the production of display panels (such as OLEDs), primarily used for the precise patterning of microstructures, and its application spans multiple core manufacturing stages. For example, plasma etching can use plasma to remove thin films on a substrate, remove photoresist films from a substrate, and can also be used in deposition processes or drying and cleaning processes to form thin films on a substrate.

[0032] Plasma refers to an ionized gas state composed of ions, radicals, and electrons. In the manufacturing process of display panels, plasma etching can be used to form fine electrodes and channels in backplane processes, for patterning insulating and passivation layers, and for various processes such as fine metal masking. Due to the diverse process requirements of plasma-processed substrates, appropriate selectivity is required for each process. This selectivity is determined based on the degree of etching on the substrate and the type of material to be etched.

[0033] In some cases, although there are solutions to control the amount of different groups by changing the adsorption structure that adsorbs different groups in the plasma according to different process requirements, this solution requires disassembling and assembling different adsorption structures according to process requirements. This makes it take a long time to change the amount of groups in the plasma, increases the time required for process adjustment of plasma etching equipment, and is not conducive to improving production efficiency.

[0034] To improve the production efficiency of plasma etching equipment with an adsorption mechanism, some embodiments of this application provide a plasma etching equipment with an adsorption mechanism. This equipment includes a process chamber, a sensing electrode, an adsorption mechanism, and a support device. The process chamber contains plasma. The sensing electrode is disposed in the process chamber, dividing the process chamber into a first process chamber and a second process chamber. The sensing electrode has multiple through holes extending along its thickness direction, connecting the first and second process chambers. The adsorption mechanism includes an adsorption structure rotatably connected to the sensing electrode and located on the side of the sensing electrode closer to the first process chamber. The adsorption structure is configured as a prismatic structure, including at least two adsorption surfaces with different adsorption materials. Different adsorption materials can adsorb different groups in the plasma. The adsorption structure has adsorption holes, and each adsorption surface is connected to an adsorption hole. The adsorption structure can be rotated so that the adsorption surfaces with different adsorption materials face away from the second process chamber along the thickness direction, thereby adsorbing different groups in the plasma. The support device is located in the second process chamber and is used to support the substrate. Because the adsorption structure includes adsorption surfaces with adsorption material, each adsorption surface is connected to adsorption holes, and the adsorption surfaces face away from the second process cavity along the thickness direction, when the sensing electrode applies plasma and it passes through the through holes from the first process cavity to the second process cavity, the plasma can better contact the adsorption material on the adsorption surfaces connected to the adsorption holes. This allows for better adsorption of functional groups in the plasma, achieving control over the amount of functional groups in the plasma. In the above scheme, since the adsorption structure is configured as a prismatic structure including at least two adsorption surfaces with different adsorption materials, when different functional groups in the plasma need to be adsorbed to control their amount, the adsorption structure can be rotated so that the adsorption surfaces with different adsorption materials face away from the second process cavity along the thickness direction. This achieves switching between adsorption surfaces with different adsorption materials and the adsorption holes connected to them, rather than replacing the adsorption structure with different adsorption materials. This reduces the time required to replace functional groups in the adsorbed plasma, shortens the process adjustment time of the plasma etching equipment with the adsorption mechanism, and improves production efficiency.

[0035] The plasma etching equipment with an adsorption mechanism described in this application is not only suitable for etching substrates in display panels, but also for finishing metal surfaces, manufacturing printed circuit boards, and other fields. Those skilled in the art can choose according to the actual situation.

[0036] The technical solution of the plasma etching apparatus with an adsorption mechanism provided in this application will be further described below with reference to the accompanying drawings and specific embodiments.

[0037] Some embodiments of this application provide a plasma etching apparatus with an adsorption mechanism, see reference. Figure 1The plasma etching apparatus with adsorption mechanism 3 includes a process chamber 1, a sensing electrode 2, an adsorption mechanism 3, and a support device 4. The process chamber 1 is used to contain plasma. The sensing electrode 2 is disposed in the process chamber 1, dividing the process chamber 1 into a first process chamber 11 and a second process chamber 12. The sensing electrode 2 has multiple through holes 21 extending along its own thickness direction Z, which connect the first process chamber 11 and the second process chamber 12. The adsorption mechanism 3 includes an adsorption structure 31, which is rotatably connected to the sensing electrode 2 and located near the first process chamber 11. On one side; the adsorption structure 31 is configured as a prismatic structure, the prismatic structure includes at least two adsorption surfaces 311 with different adsorption materials, the different adsorption materials can adsorb different groups in the plasma; the adsorption structure 31 is provided with adsorption holes 312, each adsorption surface 311 is connected to an adsorption hole 312, the adsorption structure 31 can be rotated so that the adsorption surfaces 311 with different adsorption materials are facing away from the second process cavity 12 along the thickness direction Z, so that the adsorption structure 31 can adsorb different groups in the plasma; the carrier device 4 is located in the second process cavity 12, and the carrier device 4 is used to carry the substrate 5.

[0038] The process chamber 1 can be a chamber structure in the plasma etching apparatus with adsorption mechanism 3, which is used to accommodate the substrate 5 to be etched and to provide processing space. The process chamber 1, as a processing space, can accommodate plasma, so that the plasma can process the substrate 5 located in the process chamber 1 to achieve etching of the substrate 5.

[0039] For example, the process chamber 1 may be formed by a wall 13 surrounding it, with the wall 13 forming a central cavity inside as the process chamber 1.

[0040] The sensing electrode 2 can be a device for applying plasma. It can guide the plasma to move along a set trajectory through the electric field it generates, so that the plasma can diffuse to a designated area and process the substrate 5 (the part to be etched) in the designated area.

[0041] The sensing electrode 2 is disposed in the process chamber 1, meaning that the sensing electrode 2 is housed in the process chamber 1 and located in the central region of the process chamber 1, so that the sensing electrode 2 can be located in the plasma to apply an action to the plasma. By disposing the sensing electrode 2 in the process chamber 1, the process chamber 1 is divided into a first process chamber 11 and a second process chamber 12 by the sensing electrode 2. Under the action of the sensing electrode 2, the plasma can move from the first process chamber 11 to the second process chamber 12 so that the plasma can process the substrate 5 located in the second process chamber 12.

[0042] The through-hole 21 can be a hole-like structure provided in the induction electrode 2, which extends through the thickness direction Z of the induction electrode 2. Since the induction electrode 2 divides the process chamber 1 into two regions, the first process chamber 11 and the second process chamber 12, the through-hole 21 extends through the thickness direction Z of the induction electrode 2, which can connect the first process chamber 11 and the second process chamber 12, so that plasma can enter the second process chamber 12 from the first process chamber 11 through the through-hole 21.

[0043] The first process cavity 11 can be a portion of the chamber space in the process chamber 1, and the second process cavity 12 can be another portion of the chamber space in the process chamber 1, separated by the sensing electrode 2. When plasma enters the process chamber 1, it can first enter the first process cavity 11, and then, under the action of the sensing electrode 2, enter the second process cavity 12 through the through hole 21, so as to process the substrate 5 located in the second process cavity 12.

[0044] The sensing electrode 2 has multiple through holes 21. These through holes 21 can be arranged at equal intervals on the sensing electrode 2, so that the plasma in the first process cavity 11 can enter the second process cavity 12 more uniformly under the action of the multiple through holes 21. This makes the plasma more uniformly distributed in the second process cavity 12, which helps to reduce the problem of excessive local processing of the substrate 5 by the plasma and helps to improve the uniformity of the plasma's action on the substrate 5.

[0045] For example, the sensing electrode 2 can be configured as a mesh sensing electrode 2. The through holes 21 in the mesh sensing electrode 2 are distributed more evenly and densely, which not only helps to reduce the resistance encountered by the plasma when passing through the sensing electrode 2, but also helps to further improve the uniformity of plasma distribution in the second process cavity 12.

[0046] The adsorption mechanism 3 can be a mechanism for adsorbing radicals in the plasma. By setting the adsorption mechanism 3 in the plasma etching equipment to adsorb radicals in the plasma, the amount of radicals in the plasma can be controlled, so as to control the ratio of etchant to radicals, so as to meet the selective etching of different materials on the substrate 5.

[0047] The adsorption structure 31 can be a key component in the adsorption mechanism 3, which is used to adsorb radicals in the plasma. The adsorption material can be a material capable of adsorbing radicals in the plasma. By providing the adsorption material on the side of the adsorption structure 31, the side becomes an adsorption surface 311 with adsorption radicals in the plasma, so that the adsorption structure 31 can adsorb radicals in the plasma.

[0048] Since different adsorbent materials can adsorb different types of groups in plasma, for example, materials including molybdenum can adsorb chlorine groups, materials including nickel or titanium can adsorb fluorine groups and hydrogen ions, and materials including tungsten can adsorb oxygen groups, different adsorbent materials can be used to adsorb plasma to achieve the adsorption of different groups, so as to adjust the ratio of etchant to groups and achieve selective etching of different materials on substrate 5.

[0049] For example, in some cases, those skilled in the art can adsorb different groups in the plasma by replacing the adsorption structure 31 with different adsorption materials, so as to control or adjust the amount of different groups in the plasma.

[0050] The adsorption structure 31 is rotatably connected to the sensing electrode 2, meaning that the adsorption structure 31 is connected to the sensing electrode 2 and can rotate relative to the sensing electrode 2. The adsorption structure 31 is located on the side of the sensing electrode 2 near the first process cavity 11, meaning that the adsorption structure 31 is connected to the portion of the sensing electrode 2 near the first process cavity 11, so that the adsorption structure 31 can be located in the first process cavity 11 and can adsorb the plasma in the first process cavity 11. After the amount of radicals in the plasma is adjusted or controlled, it enters the second process cavity 12 to process the substrate 5.

[0051] By configuring the adsorption structure 31 as a prismatic structure, the adsorption structure 31 has multiple rectangular sides, facilitating the placement of different adsorption materials on different sides. The prismatic structure includes at least two adsorption surfaces 311 with different adsorption materials. Specifically, at least two of the multiple sides of the prismatic structure are provided with different adsorption materials to form at least two adsorption surfaces 311 with different adsorption materials. Since different adsorption materials can adsorb different groups in the plasma, the adsorption surfaces 311 with different materials on the prismatic adsorption structure 31 can adsorb different groups in the plasma.

[0052] The adsorption pore 312 can be a porous structure provided in the adsorption structure 31. By making each adsorption surface 311 connected with an adsorption pore 312, when the adsorption surface 311 faces away from the second process cavity 12 along the thickness direction Z, the plasma can enter the second process cavity 12 through the through hole 21 from the first process cavity 11 and face the adsorption surface 311, so that the plasma can contact the adsorbent material on the adsorption surface 311 connected with the adsorption pore 312, and the groups in the plasma can be adsorbed.

[0053] For example, the adsorption pore 312 is arranged to extend radially along the prismatic structure. When the adsorption surface 311 faces away from the second process cavity 12 along the thickness direction Z, the orifice of the adsorption pore 312 faces away from the second process cavity 12 along the thickness direction Z. The plasma can be introduced into the second process cavity 12 from the first process cavity 11 through the through hole 21 and can be opposite to the orifice of the adsorption pore 312, so that the plasma can better contact the adsorption material on the adsorption surface 311 connected with the adsorption pore 312, and the groups in the plasma can be better adsorbed.

[0054] For example, the inner wall surface of the adsorption hole 312, which is connected to the adsorption surface 311, is also provided with the same adsorption material as the adsorption surface 311, which further enables the plasma to contact the adsorption material better and the groups in the plasma to be adsorbed better.

[0055] By rotatably connecting the adsorption structure 31 to the sensing electrode 2, the adsorption structure 31 can be rotated to replace the adsorption surface 311 with different adsorption materials facing away from the second process cavity 12 along the thickness direction Z. This allows the adsorption structure 31 to replace the adsorption surface 311 with different adsorption materials and the adsorption hole 312 connected to it, thereby achieving the adsorption of different groups in the plasma. This reduces the time required to replace the adsorbed groups in the plasma, and enables the plasma etching equipment with the adsorption mechanism 3 to conveniently adsorb different groups in the plasma to control their quantity.

[0056] The carrier device 4 can be a device for carrying or placing the substrate 5. By placing the carrier device 4 in the second process cavity 12, the substrate 5 can be plasma-treated in the second process cavity 12 under the support of the carrier device 4, so that the substrate 5 can be plasma-treated in a more uniform manner.

[0057] Since the adsorption structure 31 includes an adsorption surface 311 with adsorption material, and each adsorption surface 311 is connected to an adsorption hole 312, and the adsorption surface 311 faces away from the second process cavity 12 along the thickness direction Z, when the sensing electrode 2 applies plasma to it and passes it through the through hole 21 from the first process cavity 11 into the second process cavity 12, the plasma can better contact the adsorption material on the adsorption surface 311 connected to the adsorption hole 312, and the radicals in the plasma can be better adsorbed, thereby achieving control over the amount of radicals in the plasma. In the above scheme, since the adsorption structure 31 is configured as a prism-shaped structure including at least two adsorption surfaces 311 with different adsorption materials, when it is necessary to adsorb different groups in the plasma to control their amount, the adsorption structure 31 can be rotated so that the adsorption surfaces 311 with different adsorption materials face away from the second process cavity 12 along the thickness direction Z. This realizes the switching of the adsorption surfaces 311 with different adsorption materials and the adsorption holes 312 connected to them, instead of replacing the adsorption structure 31 with different adsorption materials. This reduces the time required to replace the groups in the adsorbed plasma, shortens the process adjustment time of the plasma etching equipment with adsorption mechanism 3, and improves production efficiency.

[0058] In some embodiments, at least two adsorption surfaces 311 are divided into at least two groups, and each group of adsorption surfaces 311 includes two adsorption surfaces 311 arranged opposite to each other; the adsorption materials on the adsorption surfaces 311 of different groups are different.

[0059] By dividing at least two adsorption surfaces 311 into at least two groups, and ensuring that each group of adsorption surfaces 311 includes two opposing adsorption surfaces 311, the adsorption structure 31 is a prismatic structure with an even number of adsorption surfaces 311, wherein each pair of opposing adsorption surfaces 311 constitutes a group of adsorption surfaces 311. This arrangement allows one adsorption surface 311 in a group of adsorption surfaces 311 to adsorb plasma groups, while the other opposing adsorption surface 311 can face the sensing electrode 2, or even abut against the surface of the sensing electrode 2 facing the first process cavity 11.

[0060] The adsorption materials on the adsorption surfaces 311 of different groups are different. This can mean that the adsorption materials on two opposite adsorption surfaces 311 in the same group are the same, while the adsorption materials on the adsorption surfaces 311 of different groups are different.

[0061] In some embodiments, two oppositely arranged adsorption surfaces 311 in each group of adsorption surfaces 311 are connected through adsorption holes 312.

[0062] By connecting two oppositely arranged adsorption surfaces 311 in each group of adsorption surfaces 311 through adsorption holes 312, the same adsorption hole 312 can connect two oppositely arranged adsorption surfaces 311 in each group of adsorption surfaces 311, which helps to reduce the number of adsorption holes 312 provided on the adsorption structure 31 and reduce the processing difficulty of the adsorption structure 31.

[0063] For example, the adsorption pore 312 penetrates the adsorption structure 31 radially, which facilitates the processing of the adsorption pore 312 and reduces the processing difficulty.

[0064] In some embodiments, reference Figure 2 The prismatic structure includes three sets of adsorption surfaces 311, and the adsorption materials on the three sets of adsorption surfaces 311 are respectively a material including molybdenum, a material including nickel or titanium, and a material including tungsten.

[0065] The prismatic structure includes three sets of adsorption surfaces 311. This can mean that the adsorption structure 31 is a regular hexagonal prism, in which every two opposite adsorption surfaces 311 form a set of adsorption surfaces 311, and three sets of adsorption surfaces 311 are formed on the adsorption structure 31.

[0066] Since materials including molybdenum can adsorb chlorine groups, materials including nickel or titanium can adsorb fluorine groups and hydrogen ions, and materials including tungsten can adsorb oxygen groups, by making the adsorbent materials on the three sets of adsorption surfaces 311 include materials including molybdenum, materials including nickel or titanium, and materials including tungsten, the adsorption structure 31 can selectively adsorb chlorine groups, fluorine groups, hydrogen ions, and oxygen groups.

[0067] In some embodiments, the adsorption mechanism 3 further includes a driver 32, which is tractively connected to the adsorption structure 31.

[0068] The driver 32 can be a device used to drive the adsorption structure 31 to rotate. The driver 32 is connected to the adsorption structure 31 via a transmission, so that the driver 32 can drive the adsorption structure 31 to rotate to change the adsorption surface 311 with different adsorption materials facing away from the second process cavity 12 along the thickness direction Z.

[0069] For example, the driver 32 can be a servo motor, which can control the rotation angle more accurately, so that the adsorption surface 311 with different adsorption materials can be directed more accurately in the thickness direction Z away from the second process cavity 12.

[0070] In some embodiments, the driver 32 is connected to the wall 13 of the process chamber 1, the end face of the prism structure is disposed facing the wall 13, and the output end of the driver 32 is drivenly connected to the end face of the prism structure.

[0071] The driver 32 is connected to the wall 13 of the process chamber 1. This means that the driver 32 is located outside the process chamber 1 and connected to the wall 13 of the process chamber 1, so that the driver 32 is not easily affected by the plasma.

[0072] The prism-shaped structure's end face is positioned facing the wall 13, which not only allows the end face of the prism-shaped structure to face the driver 32, enabling the output end of the driver 32 to be connected to the end face of the prism-shaped structure via a transmission shaft passing through the wall 13, but also allows the central axis of the prism-shaped adsorption structure 31 to be parallel to the sensing electrode 2, allowing the adsorption structure 31 to rotate relative to the sensing electrode 2 under the drive of the driver 32.

[0073] In some embodiments, reference Figure 3 and Figure 4 The adsorption structure 31 is provided with a vent 313 for communicating with the through hole 21. The vent 313 penetrates the prismatic structure radially. Each adsorption surface 311 with adsorption material is connected to a vent 313. The vent 313 communicating with the through hole 21 extends along the thickness direction Z.

[0074] The vent 313 can be a porous structure provided in the adsorption structure 31, which is used for the passage of plasma. By setting the vent 313 as a radially penetrating prismatic structure, plasma can flow through the vent 313 from one side of the adsorption structure 31 to the opposite side of the adsorption structure 31.

[0075] By connecting each adsorption surface 311 with adsorption material to a vent 313, when the orientation of each adsorption surface 311 with adsorption material is opposite to the second process cavity 12 along the thickness direction Z, the vent 313 connected to the adsorption surface 311 can communicate with the through hole 21 and extend along the thickness direction Z of the sensing electrode 2, so that the plasma in the first process cavity 11 can enter the second process cavity 12 through the vent 313 and the through hole 21, thereby reducing the resistance of the adsorption structure 31 to the plasma flow.

[0076] In some embodiments, the radius of the vent 313 is set to be greater than or equal to the radius of the vent 21.

[0077] The radius of the vent 313 is set to be greater than or equal to the radius of the through hole 21. This can mean that the radius of the vent 313 is equal to the radius of the through hole 21, or it can mean that the radius of the vent 313 is greater than the radius of the through hole 21. By setting the radius of the vent 313 to be greater than the radius of the through hole 21, the resistance encountered by the plasma in the first process cavity 11 in the process of entering the second process cavity 12 through the vent 313 and the through hole 21 is reduced.

[0078] In some embodiments, multiple adsorption structures 31 are provided, and multiple adsorption structures 31 are sequentially arranged on the sensing electrode 2 along the first direction X, which is perpendicular to the thickness direction Z.

[0079] The first direction X can refer to the direction perpendicular to the thickness direction Z. By sequentially arranging multiple adsorption structures 31 along the first direction X on the sensing electrode 2, the multiple adsorption structures 31 can be sequentially arranged on the sensing electrode 2, which facilitates the arrangement of multiple adsorption structures 31 on the sensing electrode 2 and is beneficial to improving the adsorption effect of the adsorption structures 31 on groups in the plasma.

[0080] In some embodiments, a plurality of adsorption structures 31 are arranged at equal intervals along a first direction X; in the thickness direction Z, the projection of at least one through hole 21 is located between the projections of two adjacent adsorption structures 31.

[0081] By arranging multiple adsorption structures 31 at equal intervals along the first direction X, the multiple adsorption structures 31 can adsorb the plasma in the first process cavity 11 in a relatively uniform manner.

[0082] In the thickness direction Z, the projection of at least one through hole 21 is located between the projections of two adjacent adsorption structures 31. This means that at least one through hole 21 is provided in the region between the projections of two adjacent adsorption structures 31 in the thickness direction Z of the sensing electrode 2, so that when the plasma flows from the first process cavity 11 to the second process cavity 12, the plasma can flow through the through hole 21 between the two adjacent adsorption structures 31, thereby reducing the resistance encountered by the plasma when flowing from the first process cavity 11 to the second process cavity 12.

[0083] In some embodiments, reference Figure 5 The plasma etching equipment with adsorption mechanism 3 also includes a gas supply device 6 and an exhaust device 7. The gas supply device 6 is connected to the first process chamber 11, and the exhaust device 7 is connected to the second process chamber 12.

[0084] The gas supply device 6 can be a device for supplying plasma to the process chamber 1. The gas supply device 6 may include a container storing plasma, or it may include electrodes capable of generating plasma. Those skilled in the art can select the appropriate method for supplying plasma using the gas supply device 6, as long as the gas supply device 6 can stably and continuously supply plasma.

[0085] The exhaust device 7 can be a device for discharging the plasma that has been processed from the substrate 5 in the process chamber 1. By discharging the waste gas after processing the substrate 5, the exhaust device 7 allows the plasma supplied by the gas supply device 6 to smoothly enter the process chamber 1.

[0086] By connecting the gas supply device 6 to the first process cavity 11, the plasma provided by the gas supply device 6 can first enter the first process cavity 11, and after passing through the action of the sensing electrode 2 and the adsorption of the adsorption structure 31, it can enter the second process cavity 12 to process the substrate 5 in the second process cavity 12.

[0087] By connecting the exhaust device 7 to the second process chamber 12, the plasma after the substrate 5 has been processed can be discharged outward, reducing the possibility of plasma from the unprocessed substrate 5 being discharged directly.

[0088] Although this application has been described with reference to preferred embodiments, various modifications can be made thereto and components can be replaced with equivalents without departing from the scope of this application. In particular, the technical features mentioned in the various embodiments can be combined in any manner, provided there is no structural conflict. This application is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

Claims

1. A plasma etching apparatus with an adsorption mechanism, characterized in that, include: A process chamber for containing plasma; A sensing electrode is disposed in the process chamber, dividing the process chamber into a first process chamber and a second process chamber. The sensing electrode has a plurality of through holes extending along its own thickness direction, and the through holes connect the first process chamber and the second process chamber. An adsorption mechanism includes an adsorption structure rotatably connected to the sensing electrode and located on the side of the sensing electrode closer to the first process cavity. The adsorption structure is configured as a prismatic structure, comprising at least two adsorption surfaces with different adsorption materials, the different adsorption materials being capable of adsorbing different functional groups in the plasma. The adsorption structure is provided with adsorption pores, each adsorption surface being connected to an adsorption pore. The adsorption structure can be rotated so that the adsorption surfaces with different adsorption materials face away from the second process cavity along the thickness direction, thereby enabling the adsorption structure to adsorb different functional groups in the plasma. A carrier device is located in the second process cavity and is used to support a substrate.

2. The plasma etching apparatus with an adsorption mechanism according to claim 1, characterized in that, The at least two adsorption surfaces are divided into at least two groups, and each group of adsorption surfaces includes two adsorption surfaces arranged opposite to each other; the adsorption materials on the adsorption surfaces of different groups are different.

3. The plasma etching apparatus with an adsorption mechanism according to claim 2, characterized in that, The prismatic structure includes three sets of adsorption surfaces, and the adsorption materials on the three sets of adsorption surfaces are respectively a material including molybdenum, a material including nickel or titanium, and a material including tungsten.

4. The plasma etching apparatus with an adsorption mechanism according to claim 1, characterized in that, The adsorption mechanism further includes a driver, which is drive-connected to the adsorption structure.

5. The plasma etching apparatus with an adsorption mechanism according to claim 4, characterized in that, The driver is connected to the wall of the process chamber, the end face of the prismatic structure faces the wall, and the output end of the driver is drivenly connected to the end face of the prismatic structure.

6. The plasma etching apparatus with an adsorption mechanism according to claim 1, characterized in that, The adsorption structure is provided with a vent for communicating with the through hole. The vent penetrates the prismatic structure radially. Each adsorption surface with the adsorption material is connected to the vent. The vent extends along the thickness direction.

7. The plasma etching apparatus with an adsorption mechanism according to claim 6, characterized in that, The radius of the vent is set to be greater than or equal to the radius of the vent.

8. The plasma etching apparatus with an adsorption mechanism according to claim 6, characterized in that, The adsorption structure is provided in multiple ways, and the multiple adsorption structures are sequentially arranged on the sensing electrode along a first direction, which is perpendicular to the thickness direction.

9. The plasma etching apparatus with an adsorption mechanism according to claim 8, characterized in that, The plurality of adsorption structures are arranged at equal intervals along the first direction; in the thickness direction, the projection of at least one of the through holes is located between the projections of two adjacent adsorption structures.

10. The plasma etching apparatus with an adsorption mechanism according to claim 1, characterized in that, The plasma etching equipment with an adsorption mechanism further includes a gas supply device and an exhaust device, wherein the gas supply device is connected to the first process chamber and the exhaust device is connected to the second process chamber.

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