An epitaxial growth apparatus and method

Abstract

The application relates to the field of epitaxy technology, and discloses an epitaxial growth device and method. The device comprises a cavity, a spraying device arranged in the cavity and used for supplying a precursor gas required for epitaxial growth to a substrate surface, a bearing device arranged in the cavity and arranged opposite to the spraying device and used for bearing the substrate, and a power supply device electrically connected to the bearing device and used for applying a voltage to the bearing device during operation of the epitaxial growth device to inject carriers into the substrate through the bearing device. The power supply device is independently connected to the bearing device, so that carrier injection can be realized. The concentration of point defects in an epitaxial film is actively regulated by electricity without changing the main process conditions of epitaxial growth.

Description

Technical Field

[0001] This application relates to the field of epitaxial technology, and in particular to an epitaxial growth apparatus and method. Background Technology

[0002] Semiconductor epitaxial growth is a key process for preparing functional semiconductor thin films and constructing the core functional layer of optoelectronic devices. The crystal quality of the epitaxial thin film directly determines the electrical and optoelectronic performance of semiconductor devices, while point defects (including vacancies, interstitial atoms, and impurity atoms) are the core microscopic factors that determine the optoelectronic performance of the thin film: favorable point defects (such as doping with impurity atoms) can be used to regulate electrical performance, while unfavorable point defects (such as deep-level defects) will act as electron-hole recombination centers, significantly affecting the leakage current, luminous efficiency, and reliability of the device.

[0003] In conventional epitaxial growth, the precursor gas requires high temperature to gain energy and dissociate. The resulting ions and atoms migrate to the substrate surface and gradually accumulate to form a single-crystal thin film. However, while the high-temperature environment ensures precursor dissociation and particle migration, it also induces a large number of point defects. In existing technologies, the concentration of point defects is mainly controlled by adjusting parameters such as growth temperature and raw material ratio (chemical potential). However, the suitable process window for crystal epitaxial growth is very narrow: the adjustable range of temperature and raw material concentration is extremely limited. Exceeding this range will lead to a decrease in the crystallinity of the epitaxial layer, deterioration of electrical properties, or even growth failure.

[0004] Therefore, how to solve the above-mentioned technical problems should be a key focus for those skilled in the art. Summary of the Invention

[0005] The purpose of this application is to provide an epitaxial growth apparatus and method to achieve adjustable point defect concentration in epitaxial thin films without changing the main epitaxial growth process conditions.

[0006] To solve the above-mentioned technical problems, this application provides an epitaxial growth apparatus, comprising: cavity; A spraying device, disposed within the cavity, is used to supply precursor gases required for epitaxial growth to the substrate surface. A support device is disposed within the cavity and opposite to the spraying device, and is used to support the substrate; A power supply device, electrically connected to the carrier device, is used to apply voltage to the carrier device during the operation of the epitaxial growth equipment, so as to inject charge carriers into the substrate through the carrier device.

[0007] Optionally, it also includes: A heating device for heating the substrate.

[0008] Optionally, the heating device includes a resistance heater, which is disposed below the support device.

[0009] Optionally, the heating device includes an induction coil disposed on the outside of the cavity.

[0010] Optionally, the power supply device is used to continuously apply voltage to the bearing device.

[0011] Optionally, it also includes: A rotating component is disposed on the lower surface of the bearing device; A driving device, connected to the rotating component, is used to drive the rotating component to rotate.

[0012] This application also provides an epitaxial growth method based on the above-mentioned epitaxial growth equipment, including: Place the substrate on the support device of the epitaxial growth equipment; Precursor gas is introduced into the cavity of the epitaxial growth apparatus to perform epitaxial growth on the substrate surface. During at least a portion of the epitaxial growth process, charge carriers are injected into the substrate through the carrier device to obtain an epitaxial thin film.

[0013] Optionally, a precursor gas is introduced into the cavity of the epitaxial growth apparatus, and before epitaxial growth is performed on the substrate surface, the apparatus further includes: The substrate is preheated.

[0014] Optionally, the preheating temperature is 20°C to 200°C higher than the epitaxial growth temperature, and the preheating time is 30 minutes to 300 minutes.

[0015] Optionally, the epitaxial film is made of the same material as the substrate.

[0016] In the epitaxial growth equipment provided in this application, the power supply device is independently connected to the support device, eliminating the need to form a flat electric field between the spray device and the support device to achieve carrier injection. This equipment can actively control the point defect concentration in the epitaxial film through electrical means without changing the main epitaxial growth process conditions (such as temperature and raw material ratio). Compared to conventional epitaxial equipment that can only indirectly control point defects by adjusting the growth temperature and raw material ratio, the epitaxial growth equipment of this embodiment provides an additional, independent control dimension, enabling more flexible suppression of the formation of undesirable point defects, thereby improving the photoelectric properties of the epitaxial film.

[0017] In addition, this application also provides an epitaxial growth method with the above-mentioned advantages. Attached Figure Description

[0018] To more clearly illustrate the technical solutions of the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 This is a schematic diagram of the structure of an epitaxial growth apparatus provided in an embodiment of this application; Figure 2 This is a flowchart of an epitaxial growth method provided in an embodiment of this application.

[0020] Reference numerals: 1. Cavity; 2. Spray device; 3. Support device; 4. Power supply device; 5. Substrate. Detailed Implementation

[0021] To enable those skilled in the art to better understand the present application, the present application will be further described in detail below with reference to the accompanying drawings and specific embodiments. Obviously, the described embodiments are merely some embodiments of the present application, and not all embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0022] Many specific details are set forth in the following description in order to provide a full understanding of the invention. However, the invention may also be practiced in other ways different from those described herein, and those skilled in the art can make similar extensions without departing from the spirit of the invention. Therefore, the invention is not limited to the specific embodiments disclosed below.

[0023] As described in the background section, existing technologies control point defect concentration by adjusting parameters such as growth temperature and raw material ratio. However, the adjustable range of temperature and raw material concentration is extremely limited; exceeding this range will lead to a decrease in the crystallinity of the epitaxial layer, deterioration of electrical properties, or even growth failure.

[0024] In view of this, this application provides an epitaxial growth apparatus, please refer to... Figure 1 ,include: Cavity 1; The spray device 2 is disposed in the cavity 1 and is used to supply the precursor gas required for epitaxial growth to the surface of the substrate 5. The support device 3 is disposed inside the cavity 1 and opposite to the spray device 2, and is used to support the substrate 5; The power supply device 4 is electrically connected to the carrier device 3 and is used to apply voltage to the carrier device 3 during the operation of the epitaxial growth equipment so as to inject charge carriers into the substrate 5 through the carrier device 3.

[0025] Chamber 1 is the main spatial container for the epitaxial growth reaction, providing a closed reaction environment for the epitaxial growth process. Chamber 1 is usually made of high-temperature and corrosion-resistant materials, such as stainless steel or quartz, to withstand the high temperatures and chemical reaction atmosphere during the epitaxial growth process.

[0026] The spray device 2 can be a gas spray head, which can be provided with multiple gas distribution channels and micropore structures to uniformly deliver the precursor gas to the vicinity of the substrate 5 surface.

[0027] The support device 3 is located below the spray device 2 and is used to place and fix the substrate 5 to be epitaxially grown. The support device 3 can be a graphite tray or the like. Graphite material has good thermal conductivity and high temperature resistance, and can adapt to the high temperature environment during the epitaxial growth process.

[0028] The power supply device 4 is electrically connected to the carrier device 3 via wires or conductive connectors. The power supply device 4 is used to apply voltage to the carrier device 3 during the operation of the epitaxial growth equipment. When voltage is applied to the carrier device 3, the substrate 5 on the carrier device 3 also acquires a corresponding potential, thereby injecting charge carriers into the substrate 5 through the carrier device 3. The charge carriers can include electrons or holes, and the specific injection type depends on the polarity of the applied voltage and the conductivity type of the substrate 5 material.

[0029] Injecting charge carriers (electrons or holes) during the growth process aims to regulate the Fermi level of the material, further regulate the formation energy of harmful point defects, and suppress harmful point defects.

[0030] By injecting charge carriers into substrate 5, the Fermi level of substrate 5 and the epitaxial film grown on it can be adjusted, thereby controlling the formation energy of charged point defects during epitaxial growth. According to the theoretical calculation formula for the formation energy of point defects, the formation energy of charged point defects is a function of the Fermi level. Therefore, by adjusting the Fermi level, the concentration of point defects can be actively controlled.

[0031] This application does not limit the magnitude of the applied voltage; the higher the voltage, the better the injection effect.

[0032] It should be noted that this application does not limit the power supply method of the power supply device 4, but depends on the specific circumstances.

[0033] In some embodiments of this application, the power supply device 4 is used to continuously apply voltage to the carrier device 3.

[0034] Continuous application means that the power supply device 4 maintains a continuous supply of output voltage from the start of voltage application to the stop of voltage application, without any interruption.

[0035] The continuous application of voltage ensures that the carrier device 3 and the substrate 5 are always in a state of injected carriers throughout the entire application period. Taking the homoepitaxial growth of gallium oxide as an example, continuous carrier injection throughout the epitaxial growth process allows the Fermi level of the crystal to be modulated at each growth moment, thereby enabling targeted control of the formation energy of charged point defects at each growth moment. This continuous control method helps to ensure the uniformity of the distribution of point defects in the entire epitaxial film, thereby improving the overall crystal quality and photoelectric performance consistency of the epitaxial layer.

[0036] In some embodiments of this application, the power supply device 4 is used to intermittently apply voltage to the carrier device 3.

[0037] Intermittent voltage application refers to the operation of the epitaxial growth equipment where the voltage application is not continuous throughout the entire growth period, but rather alternates between voltage application and non-application states according to preset time intervals or preset timing patterns. For example, intermittent voltage application can employ a periodic on / off control method, such as applying voltage for a certain duration (e.g., several seconds or minutes) and then stopping the application for the same or different durations, repeating this alternation. Alternatively, a non-periodic intermittent method can be used, such as applying voltage only during specific growth stages (e.g., the buffer layer growth stage, the doped layer growth stage, or within a certain thickness range), and stopping application during other stages. The power supply device 4 can implement the above-mentioned intermittent control logic through a built-in or external timing controller (e.g., a programmable logic controller or a time relay).

[0038] During the intermittent voltage application process, carriers are injected into the carrier device 3 and substrate 5 only during the voltage application period. At this time, the Fermi level of substrate 5 and the growing epitaxial film is regulated, and the formation energy of charged point defects changes accordingly, thereby suppressing the defect concentration. During the period when the voltage is stopped, no carriers are injected into the carrier device 3 and substrate 5, the Fermi level returns to the unregulated state, and epitaxial growth proceeds in the conventional mode.

[0039] It is important to note that the carrier injection in this application is applied during the growth of the epitaxial film. The purpose is to fundamentally alter the equilibrium formation energy of charged point defects by real-time control of the Fermi level of the substrate 5 and the growing epitaxial film, thereby affecting the equilibrium concentration of defects. If electrons or holes are injected into the film after epitaxial growth is complete, only non-equilibrium carriers are injected, which will recombine or be depleted over time, failing to change the fixed intrinsic Fermi level position in the crystal and thus unable to substantially affect the equilibrium concentration of point defects. Therefore, the injection scheme employed in this application during the growth process achieves a level of active point defect control that is unattainable through conventional processes and post-processing methods.

[0040] In some embodiments of this application, the epitaxial growth equipment includes, but is not limited to, any one of a metal-organic chemical vapor deposition (MOCVD) device, a molecular beam epitaxy (MBE) device, or a hydride vapor phase epitaxy (HVPE) device.

[0041] In this embodiment, the power supply device 4 is independently connected to the carrier device 3, eliminating the need to form a flat electric field between the spray device 2 and the carrier device 3 to achieve carrier injection. This equipment can actively control the point defect concentration in the epitaxial film through electrical means without changing the main epitaxial growth process conditions (such as temperature and raw material ratio). Compared to conventional epitaxial equipment that can only indirectly control point defects by adjusting the growth temperature and raw material ratio, the epitaxial growth equipment in this embodiment provides an additional, independent control dimension, enabling more flexible suppression of the formation of undesirable point defects, thereby improving the photoelectric properties of the epitaxial film.

[0042] Based on the above embodiments, in some embodiments of this application, the epitaxial growth apparatus may further include: a heating device for heating the substrate 5.

[0043] During epitaxial growth, the precursor gas needs sufficient energy through thermal energy to complete its dissociation. The dissociated ions and atoms migrate to the surface of substrate 5 and gradually accumulate to form a thin film. The heating device provides a suitable growth temperature for substrate 5 to ensure sufficient dissociation of the precursor gas and effective migration of surface particles.

[0044] By incorporating a heating device, the epitaxial growth equipment in this embodiment can operate stably at a set growth temperature, meeting the different requirements of various semiconductor materials (such as gallium oxide, gallium nitride, silicon carbide, etc.) for epitaxial growth temperature.

[0045] It should be noted that the type of heating device in this application is not limited and can be set by the user.

[0046] In some embodiments of this application, the heating device includes a resistance heater disposed below the support device 3.

[0047] A resistance heater is a device that uses the Joule heating effect generated when an electric current passes through a resistive material to achieve heating. A resistance heater may include a heating wire or a heating element.

[0048] The resistance heater is positioned below the support device 3, specifically on the side of the support device 3 facing away from the spray device 2. This arrangement allows heat to be transferred upwards from the bottom of the support device 3, uniformly heating the substrate 5 placed on the upper surface of the support device 3. The resistance heater can be fixed inside the cavity 1 by a support structure and connected to an external power source to obtain the electrical energy required for heating. By placing the resistance heater below the support device 3, the heat transfer path is short and the thermal efficiency is high, which is beneficial for achieving rapid response and precise control of the substrate 5 temperature, thereby ensuring the stability and uniformity of the temperature field during epitaxial growth.

[0049] In some embodiments of this application, the heating device includes an induction coil disposed on the outside of the cavity 1.

[0050] Induction heating is a technology that uses the principle of electromagnetic induction to achieve heating. When a high-frequency alternating current passes through an induction coil, an alternating magnetic field is generated. Eddy currents are generated inside a conductive object (such as the bearing device 3) located in the magnetic field. When the eddy currents flow through the conductor, Joule heat is generated due to the resistance, thereby achieving heating.

[0051] The induction coil is located on the outside of cavity 1, that is, outside the wall of cavity 1 and arranged around cavity 1. This non-contact heating method eliminates the need to place heating elements inside cavity 1, reducing the structural complexity inside cavity 1 and also reducing the potential risk of contamination of the reaction atmosphere by the heating elements.

[0052] Based on any of the above embodiments, in some embodiments of this application, the epitaxial growth apparatus may further include: A rotating component is disposed on the lower surface of the bearing device 3; A driving device, connected to the rotating component, is used to drive the rotating component to rotate.

[0053] The rotating component is disposed on the lower surface of the support device 3, that is, one end of the rotating component is connected to or in contact with the lower surface of the support device 3. When the driving device drives the rotating component to rotate, the support device 3 and the substrate 5 placed on the support device 3 rotate together. The rotating component can be a rotating shaft, and the driving device can be a motor (e.g., a stepper motor or a servo motor) in conjunction with a transmission mechanism (e.g., gear transmission or belt transmission) to achieve rotational drive.

[0054] The rotational motion of substrate 5 during growth helps improve the uniformity of precursor gas distribution on the surface of substrate 5, reducing regional differences in epitaxial film thickness and composition caused by uneven gas flow. The introduction of rotating components and drive devices further optimizes the equipment's ability to control growth uniformity.

[0055] This application also provides an epitaxial growth method based on the epitaxial growth equipment described in the above embodiments. Please refer to [link / reference]. Figure 2 The method may include: Step S101: Place the substrate on the support device of the epitaxial growth equipment.

[0056] The substrate can be a semiconductor substrate, such as a gallium oxide substrate, a gallium nitride substrate, or a silicon carbide substrate. The substrate can be placed directly on the upper surface of the support device, or embedded into a pre-defined groove on the support device for positioning.

[0057] Step S102: Introduce precursor gas into the cavity of the epitaxial growth apparatus and perform epitaxial growth on the substrate surface.

[0058] In some embodiments of this application, a precursor gas is introduced into the cavity of the epitaxial growth apparatus, and before epitaxial growth is performed on the substrate surface, a buffer layer with unintentionally doped (UID) may be grown on the substrate surface.

[0059] After the buffer layer grows to the predetermined thickness, the epitaxial film growth process is carried out, and the voltage applied to the bearing device by the power supply device is adjusted accordingly, so as to optimize the control of the formation energy of charged point defects by adjusting the Fermi level in the subsequent epitaxial growth process.

[0060] The buffer layer can act as a stress buffer, alleviating the problems of lattice constant mismatch and different thermal expansion coefficients between the substrate and the epitaxial film, and can also improve the growth of the epitaxial film.

[0061] Voltage can also be applied through a power supply device during the growth of the buffer layer.

[0062] Step S103: During at least a portion of the epitaxial growth process, charge carriers are injected into the substrate through the support device to obtain an epitaxial thin film.

[0063] The type of precursor gas is determined based on the material system of the epitaxial thin film. Taking gallium oxide epitaxial growth as an example, gallium sources (such as trimethylgallium) and oxygen sources (such as oxygen or water vapor) can be introduced as precursor gases. At a suitable growth temperature, the precursor gas undergoes a chemical reaction on the substrate surface, generating the target epitaxial thin film and depositing it on the substrate surface, thus achieving epitaxial growth.

[0064] A voltage is applied to the carrier device by a power supply device electrically connected to it, thereby giving the substrate on the carrier device a corresponding potential and realizing carrier injection. By injecting carriers, the Fermi level of the substrate and / or the epitaxial film grown on it can be adjusted, thereby controlling the formation energy of charged point defects. For donor point defects, increasing the Fermi level can increase their formation energy and decrease their equilibrium concentration; for acceptor point defects, the opposite is true. Carrier injection can be carried out continuously throughout the epitaxial growth process, or it can be carried out only in one or more stages of growth.

[0065] It should be noted that this application does not limit the type of carrier injection; it depends on the specific circumstances.

[0066] For example, in the fabrication of insulating gallium oxide epitaxial films, donor-type point defects (with positive charge states q) are detrimental. In this case, a forward bias can be applied to the carrier device to inject electrons, causing the Fermi level to shift towards the valence band bottom (i.e., increasing the Fermi level), thereby increasing the formation energy of the donor-type defect and reducing its equilibrium concentration. Conversely, in the fabrication of n-type conductive gallium oxide epitaxial films, acceptor-type point defects (with negative charge states q) are detrimental. In this case, a reverse bias can be applied to inject holes (i.e., extract electrons from the substrate), causing the Fermi level to shift towards the valence band top (i.e., decreasing the Fermi level), thereby increasing the formation energy of the acceptor-type defect and reducing its equilibrium concentration. This control strategy is also applicable to other semiconductor material systems; simply select the appropriate carrier injection type based on the charge properties of the target defect.

[0067] In some embodiments of this application, the epitaxial film and the substrate may be made of the same material.

[0068] In other words, a homoepitaxial growth method can be used. Homoepitaxial growth refers to an epitaxial growth method in which the material of the epitaxial layer is the same as that of the substrate. Taking gallium oxide as an example, a β-phase gallium oxide (β-Ga2O3) single crystal substrate is selected as the substrate, and the thin film obtained by epitaxial growth is also made of β-phase gallium oxide material.

[0069] Homoepitaxial growth can fundamentally eliminate the lattice mismatch problem between the epitaxial film and the substrate, avoiding interfacial stress and dislocation defects caused by differences in lattice constants. In the absence of lattice mismatch, the epitaxial film can better inherit the crystal structure of the substrate, which is beneficial for obtaining high-quality crystalline films. In this application, carrier injection is used to control the Fermi level during epitaxial growth to suppress unfavorable point defects. Simultaneously, homoepitaxial growth further eliminates lattice mismatch as an additional source of defects, allowing the effect of carrier injection in controlling point defects to be more fully realized, thereby obtaining epitaxial films with lower defect density and superior photoelectric properties.

[0070] The method in this embodiment actively modulates the Fermi level by injecting charge carriers during epitaxial growth, thereby controlling the concentration of point defects. Compared to existing methods that indirectly control point defects by adjusting growth temperature and raw material ratios, this method provides additional degrees of freedom for control. Since the process window for epitaxial growth (the adjustable range of temperature and raw material ratios) is typically narrow, the control effect of existing technologies is very limited. However, this application controls the Fermi level electrically, which is not limited by the narrow process window, and can more effectively suppress the formation of unfavorable point defects and promote the incorporation of favorable point defects, thereby obtaining high-quality epitaxial films and improving the optical and electrical performance of devices.

[0071] Based on the above embodiments, in some embodiments of this application, a precursor gas is introduced into the cavity of the epitaxial growth apparatus, and before epitaxial growth is performed on the substrate surface, the following may also be included: The substrate is preheated.

[0072] The specific operation of the preheating treatment is as follows: after the substrate is placed on the support device and before the precursor gas is formally introduced for epitaxial growth, the temperature inside the cavity is raised to a certain set temperature and maintained for a certain period of time to allow the substrate to reach thermal equilibrium. Preheating treatment helps ensure the uniformity of the substrate surface temperature field during subsequent epitaxial growth, thereby reducing morphological problems such as epitaxial layer thickness differences, compositional differences, and warping caused by temperature inhomogeneity, and improving the quality uniformity of the epitaxial film.

[0073] It should be noted that this application does not limit the temperature and time of the preheating treatment, and these can be set by the user.

[0074] In some embodiments of this application, the temperature of the preheating treatment is 20°C to 200°C higher than the epitaxial growth temperature, and the preheating treatment time is 30 minutes to 300 minutes.

[0075] In actual growth processes, thermal hysteresis exists between the substrate and the support device. If the temperature is directly increased to the growth temperature, uneven temperature distribution can easily occur in the radial direction and on both sides of the substrate. By preheating the substrate at a temperature higher than the epitaxial growth temperature for a period of time, sufficient thermal equilibrium can be achieved across the entire substrate. When the temperature is subsequently reduced to the growth temperature, the temperature distribution across the entire substrate is more uniform.

[0076] If the preheating temperature is too low (below the growth temperature + 20°C), effective thermal equilibrium cannot be achieved across the entire substrate surface; if the preheating temperature is too high (above the growth temperature + 200°C), adverse consequences such as substrate surface decomposition or abnormal surface features may occur. If the preheating time is too short (less than 30 minutes), the thermal equilibrium effect will be insignificant; if the preheating time is too long (more than 300 minutes), side effects such as substrate decomposition or abnormal surface features may occur. Therefore, setting the preheating temperature range to 20°C to 200°C above the growth temperature and the time range to 30 to 300 minutes can achieve sufficient thermal equilibrium of the substrate while avoiding the negative effects of overheating.

[0077] The epitaxial growth method in this application is described below using one example.

[0078] Step 1: Place the gallium oxide substrate on the support device and close the cavity.

[0079] Step 2: Increase the temperature to 20°C to 200°C above the gallium oxide epitaxial film growth temperature and perform a preheating treatment for 30 to 300 minutes.

[0080] Step 3: Adjust the temperature to the gallium oxide epitaxial film growth temperature, and introduce gallium source and oxygen source into the cavity, while simultaneously connecting the power supply device.

[0081] Step 4: Grow an unintentionally doped buffer layer on the gallium oxide substrate.

[0082] Step 5: After the buffer layer has grown to a certain thickness, the doping source is introduced, the voltage of the power supply device is adjusted, and the gallium oxide epitaxial film is grown.

[0083] Step 6: After the gallium oxide epitaxial film has grown to the required thickness, cut off the doping source, gallium source and oxygen source, and the epitaxy is completed.

[0084] The various embodiments in this specification are described in a progressive manner. Each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0085] The epitaxial growth apparatus and method provided in this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The descriptions of the embodiments above are only for the purpose of helping to understand the solution and core ideas of this application. It should be noted that those skilled in the art can make several improvements and modifications to this application without departing from the principles of this application, and these improvements and modifications also fall within the protection scope of this application.

Claims

1. An epitaxial growth apparatus, characterized in that, include: cavity; A spraying device, disposed within the cavity, is used to supply precursor gases required for epitaxial growth to the substrate surface. A support device is disposed within the cavity and opposite to the spraying device, and is used to support the substrate; A power supply device, electrically connected to the carrier device, is used to apply voltage to the carrier device during the operation of the epitaxial growth equipment, so as to inject charge carriers into the substrate through the carrier device.

2. The epitaxial growth apparatus as described in claim 1, characterized in that, Also includes: A heating device for heating the substrate.

3. The epitaxial growth apparatus as described in claim 2, characterized in that, The heating device includes a resistance heater, which is disposed below the support device.

4. The epitaxial growth apparatus as described in claim 2, characterized in that, The heating device includes an induction coil, which is disposed on the outside of the cavity.

5. The epitaxial growth apparatus as described in claim 1, characterized in that, The power supply device is used to continuously apply voltage to the bearing device.

6. The epitaxial growth apparatus according to any one of claims 1 to 5, characterized in that, Also includes: A rotating component is disposed on the lower surface of the bearing device; A driving device, connected to the rotating component, is used to drive the rotating component to rotate.

7. An epitaxial growth method based on the epitaxial growth equipment as described in claim 1, characterized in that, include: Place the substrate on the support device of the epitaxial growth equipment; Precursor gas is introduced into the cavity of the epitaxial growth apparatus to perform epitaxial growth on the substrate surface. During at least a portion of the epitaxial growth process, charge carriers are injected into the substrate through the carrier device to obtain an epitaxial thin film.

8. The epitaxial growth method as described in claim 7, characterized in that, Introducing a precursor gas into the cavity of the epitaxial growth apparatus, before performing epitaxial growth on the substrate surface, further includes: The substrate is preheated.

9. The epitaxial growth method as described in claim 8, characterized in that, The preheating temperature is 20°C to 200°C higher than the epitaxial growth temperature, and the preheating time is 30 minutes to 300 minutes.

10. The epitaxial growth method according to any one of claims 7 to 9, characterized in that, The epitaxial film is made of the same material as the substrate.

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