A self-calibrating method for measuring the performance of a ventilation system of a semiconductor manufacturing facility

Abstract

The present application relates to the field of semiconductor manufacturing, in particular to a self-calibration method for measuring the ventilation performance of a semiconductor manufacturing equipment, comprising: S1, releasing tracer gas to a sampling point, obtaining sampling parameters, switching the sampling point and forming a high-risk point residual matrix; S2, polling all sampling points, when switching the sampling point, setting a basic flushing time according to the high-risk point residual matrix, and flushing the common branch; S3, taking a sliding window with a preset time, when the concentration change rate in the sliding window is within a preset range, outputting the concentration average; S4, comparing the concentration average with a preset limit value according to a preset algorithm, and analyzing to obtain an abnormal point; S5, when there is an abnormal point, increasing the priority of the abnormal point and increasing the basic flushing time, and jumping to step S2. For the abnormal sampling point, the priority of the abnormal point is increased, and the basic flushing time is increased, the influence of the common branch on the abnormal point is reduced, and the accuracy of the test is further increased.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing, specifically to a method for measuring the ventilation performance of self-calibrated semiconductor manufacturing equipment. Background Technology

[0002] Semiconductor manufacturing equipment may generate corrosive, flammable, or explosive gases and volatile substances. Inadequate local exhaust design, poor enclosure sealing, or insufficient exhaust volume in semiconductor manufacturing equipment may allow process media to escape into the breathing zone of personnel. Therefore, it is necessary to verify the ventilation performance of semiconductor manufacturing equipment after it leaves the factory, is installed, modified, or is maintained.

[0003] Currently, tracer gas methods simulate process medium leaks by controlling the release of relatively safe and easily detectable low-concentration gases. Typically, sulfur hexafluoride is released at the most unfavorable leak location, sampling points are placed outside the containment enclosure, and samples are taken using sampling bags or syringes, followed by gas chromatography analysis. However, this method suffers from problems such as offline operation, multiple steps, low temporal resolution, and difficulty in capturing short-term peak values. Photoacoustic spectroscopy, on the other hand, can perform continuous analysis at the ppb level and can compensate for spectral interference from water vapor and other sources.

[0004] However, when multiple sampling points are connected to a single analyzer via pipelines of varying lengths, factors such as pipeline volume, flow rate, material adsorption, valve dead volume, and previous concentration can cause transmission delays, peak broadening and attenuation, tailing, and false peaks across points. Simply setting a fixed waiting time based on the pipeline length cannot reflect filter contamination, valve aging, and pressure, and can easily lead to misjudgments of faulty sampling points. Summary of the Invention

[0005] This invention addresses existing technical problems by providing a self-calibrating method for measuring the ventilation performance of semiconductor manufacturing equipment. For sampling points with anomalies, the method increases the priority of these points and extends the basic flushing time, thereby reducing the time interval between two consecutive samples taken from the sampling point corresponding to the anomaly. This increases the test accuracy. Furthermore, by increasing the flushing time, the influence of the common branch on the anomaly is reduced, further enhancing the test accuracy.

[0006] The technical solution provided by this invention is as follows:

[0007] A method for measuring the ventilation performance of a self-calibrating semiconductor manufacturing equipment includes the following steps:

[0008] S1. Release tracer gas at the first sampling point, obtain sampling parameters, switch to the second sampling point, and form a high-risk point residual matrix;

[0009] S2. Poll all sampling points. When switching sampling points, set the basic flushing time according to the high-risk point residual matrix and flush the common branch.

[0010] S3. Using a sliding window with a preset time, when the rate of concentration change within the sliding window is within a preset range, output the average concentration.

[0011] S4. Based on the average concentration value, compare it with the preset limit value according to the preset algorithm to analyze and obtain outliers;

[0012] S5. When an anomaly is found, increase the priority of the anomaly and increase the basic flushing time, then proceed to step S2.

[0013] Preferably, step S1 specifically includes:

[0014] S11. Release the tracer gas with pulse input to the first sampling point and analyze to obtain the pulse sampling parameters of each sampling point;

[0015] S12. Release the tracer gas with a step input to the first sampling point and analyze to obtain the step sampling parameters of each sampling point;

[0016] S13. When the first sampling point is in a steady state of concentration, switch to the second sampling point, record the residual index, and form a high-risk point residual matrix.

[0017] Preferably, step S11 specifically includes:

[0018] S111, Release the tracer gas input by the pulse to the first sampling point;

[0019] S112. Select the analysis branch corresponding to the first sampling point;

[0020] S113. Calculate the pulse sampling parameters of the first sampling point; the pulse sampling parameters include: peak value parameter and duration parameter;

[0021] S114. Analyze whether the first sampling point is the final sampling point;

[0022] If the first sampling point is not the final sampling point, proceed to step S111.

[0023] When the first sampling point is the final sampling point, proceed to step S12.

[0024] Preferably, step S12 specifically includes:

[0025] S121. Release the tracer gas with a step input to the first sampling point;

[0026] S122. Select the analysis branch corresponding to the first sampling point;

[0027] S123. Calculate the step sampling parameters of the first sampling point; the step sampling parameters include: transmission delay parameter, rise response parameter, and tailing parameter;

[0028] S124. Analyze whether the first sampling point is the final sampling point;

[0029] If the first sampling point is not the final sampling point, proceed to step S121.

[0030] When the first sampling point is the final sampling point, proceed to step S13.

[0031] Preferably, step S13 specifically includes:

[0032] S131. Release the tracer gas with a step input to the first sampling point;

[0033] S132. When the first sampling point is in a steady state of concentration, switch to the second sampling point;

[0034] S133. Record the false peak concentration and decay time at the second sampling point;

[0035] S134. Calculate the residual index from the first sampling point to the second sampling point;

[0036] The formula for the residual index is as follows: RI12 = (CP2m - Cbackground) / CP1;

[0037] Wherein, RI12 is the residual index from the first sampling point to the second sampling point, CP2m is the maximum false peak concentration at the second sampling point, CP1 is the steady-state concentration at the first sampling point, and Cbackground is the background concentration;

[0038] S135. Obtain the residual index between each sampling point to form a residual matrix of high-risk points.

[0039] Preferably, step S2 specifically includes:

[0040] S23. Poll all sampling points and switch to the current sampling point;

[0041] S24. Obtain the current residual index from the previous sampling point to the current sampling point based on the high-risk point residual matrix;

[0042] S25. Calculate the basic flushing time based on the current residual index;

[0043] S26. Wash public branch roads using the basic washing time;

[0044] tflush = N × Veff / Qa;

[0045] Where tflush is the base flushing time, N is the preset flushing intensity, Veff is the effective volume of the common branch, and Qa is the flow rate of the common branch.

[0046] Preferably, the procedure before step S22 further includes:

[0047] S21. Analyze whether the steady-state concentration at the previous sampling point is greater than the preset concentration;

[0048] S22. When the steady-state concentration at the previous sampling point is greater than the preset concentration, zero gas is supplied to the common branch.

[0049] When the steady-state concentration of the previous sampling point is less than or equal to the preset concentration, proceed to step S23.

[0050] Preferably, step S3 specifically includes:

[0051] S31. Use a preset time as a sliding window to obtain the concentration;

[0052] S32. Check whether the concentration change rate within the sliding window for a preset number of times is less than the preset change rate;

[0053] When the concentration change rate in the sliding window is greater than or equal to the preset change rate at least once within the preset number of times, proceed to step S32.

[0054] S33. When the concentration change rate within the sliding window for a preset number of times is less than the preset change rate, obtain and analyze whether the concentration difference within the sliding window for a preset number of times is less than the preset difference range.

[0055] If the concentration variance within the sliding window is greater than or equal to the preset variance range at least once within the preset number of times, proceed to step S32.

[0056] S34. When the concentration variance within the preset number of sliding windows is less than the preset variance range, the concentration is obtained by using the preset effective time as the effective data window, and the average concentration is output.

[0057] S35. Perform time correction on the effective data window based on the sampling parameters.

[0058] Preferably, step S4 specifically includes:

[0059] S41. Calculate the equivalent leakage concentration based on the average concentration;

[0060] ERC=Cprocess×Ctracer_measured / Ctracer_injected;

[0061] Where ERC is the equivalent leakage concentration, Cprocess is the medium concentration, Ctracer_measured is the average concentration, and Ctracer_injected is the release concentration of the tracer gas;

[0062] S42. Analyze whether the equivalent leakage concentration is greater than a preset limit;

[0063] When the equivalent leakage concentration is less than or equal to the preset limit, proceed to step S2.

[0064] S43. When the equivalent leakage concentration is greater than the preset limit, record the current average concentration and its corresponding sampling point as an anomaly point.

[0065] Preferably, step S5 specifically includes:

[0066] S51. When an anomaly is found, the common branch line is supplied with zero gas.

[0067] S52. Increase the priority of the next sampling point polling process for outliers;

[0068] S53. Increase the basic flushing time for abnormal points and proceed to step S2.

[0069] Compared with existing technologies, the self-calibrating method for measuring the ventilation performance of semiconductor manufacturing equipment provided by this invention has the following advantages:

[0070] 1. For sampling points with abnormalities, the priority of the abnormal points is increased, the basic flushing time is increased, and the time interval between two consecutive samplings of the sampling points corresponding to the abnormal points is reduced, which increases the test accuracy. At the same time, by increasing the flushing time, the impact of the common branch on the abnormal points is reduced again, which further increases the test accuracy.

[0071] 2. By recording the impact of the steady-state concentration of the previous sampling point on the current sampling point when switching sampling points, i.e., the residual index, the residual index of all sampling point groups formed by pairwise combinations is tested to form a high-risk point residual matrix, which facilitates subsequent leakage query and reduces the impact of the previous sampling point on subsequent sampling points.

[0072] 3. By analyzing the average concentration obtained, and then converting it to an equivalent leakage concentration, the concentration of each hazardous gas at the moment of leakage can be analyzed. Combined with the comparison of the applicable occupational exposure limit ratio, the ventilation performance of the semiconductor manufacturing equipment can be accurately determined. Attached Figure Description

[0073] The preferred embodiments will now be described in a clear and easy-to-understand manner, with reference to the accompanying drawings, to further explain the above-mentioned characteristics, technical features, advantages, and implementation methods of a self-calibrating semiconductor manufacturing equipment ventilation performance measurement system and method and its installation method.

[0074] Figure 1 This is a schematic flowchart of a self-calibrating method for measuring the ventilation performance of semiconductor manufacturing equipment according to the present invention;

[0075] Figure 2This is a flowchart illustrating step S1 of a self-calibrating semiconductor manufacturing equipment ventilation performance measurement method according to the present invention.

[0076] Figure 3 This is a flowchart illustrating a self-calibrating method for measuring the ventilation performance of semiconductor manufacturing equipment according to the present invention.

[0077] Figure 4 This is a flowchart illustrating step S2 of a self-calibrating semiconductor manufacturing equipment ventilation performance measurement method according to the present invention.

[0078] Figure 5 This is a schematic flowchart of a self-calibrating method for measuring the ventilation performance of semiconductor manufacturing equipment according to the present invention. Detailed Implementation

[0079] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0080] To keep the drawings concise, each figure only schematically shows the parts relevant to the invention, and these do not represent the actual structure of the product. Furthermore, to facilitate understanding, in some figures, only one of components with the same structure or function is schematically depicted, or only one is labeled. In this document, "one" not only means "only one," but can also mean "more than one."

[0081] Example 1

[0082] like Figure 1 As shown, the tested object is a semiconductor gas supply or process equipment with a local exhaust hood. The tracer gas release module includes a standard mixed gas cylinder, a pressure reducing assembly, a mass flow controller, a release conduit, and an adjustable nozzle. The nozzle is located at the point where the process piping passes through the hood, upstream of the flow controller, or at the most unfavorable location determined by risk analysis.

[0083] Four to twelve sampling points are set at the boundary of the breathing zone outside the mask. Each sampling point is connected to the central cabinet through a PFA, PTFE, FEP or inert metal tube with the same inner diameter, and is divided into a continuous bypass branch and a polling branch.

[0084] The two-stage valve group can be configured with 32 channels by four 8-to-1 primary valves and one 4-to-1 secondary valve, and is equipped with zero gas, span gas and cleaning gas ports.

[0085] The photoacoustic analyzer includes an infrared light source, modulation components, a photoacoustic cell, a cantilever beam or microphone, a filter component, pressure and temperature sensors, and a processing unit, and outputs at least the concentrations of SF6 and water vapor.

[0086] A method for measuring the ventilation performance of a self-calibrating semiconductor manufacturing equipment includes the following steps:

[0087] S1. Release tracer gas at the sampling point, obtain sampling parameters, switch sampling points and form a high-risk point residual matrix;

[0088] After configuring the system, the entire system is first initialized and calibrated with zero gas, and the baseline is recorded. At the same time, the background concentration is measured. Then, tracer gas is released to the current sampling point. Pulse signal, step signal or other signal methods can be used as input to measure the sampling parameters corresponding to each sampling point. After the first sampling parameter is measured, the system is switched to the second sampling point and the previous steps are repeated to obtain the sampling parameters of all sampling points. When switching sampling points, it is also necessary to measure the effect of the previous steady state concentration on the next sampling point and form a high-risk point residual matrix to reduce the overall error.

[0089] S2. Poll all sampling points. When switching sampling points, set the basic flushing time according to the high-risk point residual matrix and flush the common branch.

[0090] After obtaining the sampling parameters of all sampling points and the residual matrix of high-risk points, the sampling points of the entire system can be polled 24 hours a day. During the switching of sampling points, it is necessary to first flush the common branches according to the residual matrix of high-risk points between each sampling point to reduce the impact of the previous sampling point on the current sampling point and increase the accuracy of the test.

[0091] S3. Using a sliding window with a preset time, when the rate of concentration change within the sliding window is within a preset range, output the average concentration.

[0092] After flushing the common branch, a preset time sliding window needs to be selected on the analyzer. The concentration change rate within the sliding window is used to determine the concentration status of the current sampling point and whether the current sampling point is in a steady state or has an anomaly.

[0093] S4. Based on the average concentration value, compare it with the preset limit value according to the preset algorithm to analyze and obtain outliers;

[0094] The concentration collected at the sampling point is then compared with the preset limit according to the preset algorithm to analyze whether the current sampling point is an anomaly. Specifically, the preset limit is the proportion of the general occupational exposure limit.

[0095] S5. When an anomaly is found, increase the priority of the anomaly and increase the basic flushing time, then proceed to step S2.

[0096] For sampling points with abnormalities, i.e., abnormal points, the priority of the abnormal points is increased in subsequent polling processes, and the basic flushing time is increased. The time interval between two consecutive samplings of the sampling point corresponding to the abnormal point is reduced, which increases the test accuracy. At the same time, by increasing the flushing time, the impact of the common branch on the abnormal point is reduced again, which further increases the test accuracy.

[0097] Example 2

[0098] like Figure 2 As shown, a method for measuring the ventilation performance of a self-calibrating semiconductor manufacturing equipment includes the following steps:

[0099] S11. Release the tracer gas with pulse input to the current sampling point and analyze to obtain the pulse sampling parameters of each sampling point;

[0100] First, the tracer gas with pulse input is released to all sampling points to test the parameters of each sampling point after a short pulse leak occurs.

[0101] S12. Release the tracer gas with a step input to the current sampling point and analyze to obtain the step sampling parameters of each sampling point;

[0102] A step input tracer gas is released at all sampling points to test the parameters of each sampling point after a prolonged leak.

[0103] S13. When the first sampling point is in a steady state of concentration, switch to the second sampling point, record the residual index, and form a residual matrix of high-risk points;

[0104] By recording the impact of the steady-state concentration of the previous sampling point on the current sampling point when switching sampling points (i.e., the residual index), the residual index of all sampling point groups formed by pairwise combinations is tested to form a high-risk point residual matrix, which facilitates subsequent leakage queries and reduces the impact of the previous sampling point on subsequent sampling points.

[0105] S2. Poll all sampling points. When switching sampling points, set the basic flushing time according to the high-risk point residual matrix and flush the common branch.

[0106] S3. Using a sliding window with a preset time, when the rate of concentration change within the sliding window is within a preset range, output the average concentration.

[0107] S4. Based on the average concentration value, compare it with the preset limit value according to the preset algorithm to analyze and obtain outliers;

[0108] S5. When an anomaly is found, increase the priority of the anomaly and increase the basic flushing time, then proceed to step S2.

[0109] In this embodiment, by releasing tracer gas with a step input and releasing tracer gas with a pulse input, the effects of a short pulse or a long-term leak on each sampling point are tested.

[0110] Example 3

[0111] like Figure 3 As shown, a method for measuring the ventilation performance of a self-calibrating semiconductor manufacturing equipment includes the following steps:

[0112] Step S11 specifically includes:

[0113] S111, Release the tracer gas input by the pulse at the current sampling point;

[0114] S112. Select the analysis branch corresponding to the current sampling point;

[0115] S113. Calculate the pulse sampling parameters of the current sampling point; the pulse sampling parameters include: peak parameters and duration parameters; specifically, the peak parameters are the maximum concentration parameters detected by the analyzer, and the duration parameters are the time it takes for the analyzer to detect the concentration of the tracer gas;

[0116] S114. Analyze whether the current sampling point is the final sampling point;

[0117] If the current sampling point is not the final sampling point, proceed to step S111.

[0118] When the current sampling point is the final sampling point, proceed to step S12.

[0119] After polling all sampling points, proceed with the subsequent operations.

[0120] Step S12 specifically includes:

[0121] S121. Release the tracer gas with a step input to the current sampling point;

[0122] S122. Select the analysis branch corresponding to the current sampling point;

[0123] S123. Calculate the step sampling parameters of the current sampling point; the step sampling parameters include: transmission delay parameter, rise response parameter and tailing parameter; the transmission delay parameter is the arrival time and t10 time, the rise response parameter is t50 time and t90 time, specifically, t10 time, t50 time and t90 time represent the time when the analyzer detects that the current concentration has reached 10%, 50% and 90% steady-state concentration respectively, and the tailing constant is the time required for the sampling point to recover the background concentration after the tracer gas is stopped.

[0124] S124. Analyze whether the current sampling point is the final sampling point;

[0125] If the current sampling point is not the final sampling point, proceed to step S121.

[0126] When the current sampling point is the final sampling point, proceed to step S13.

[0127] S131. Release the tracer gas with a step input to the first sampling point;

[0128] S132. When the first sampling point is in a steady state of concentration, switch to the second sampling point;

[0129] S133. Record the false peak concentration and decay time at the second sampling point;

[0130] Since the first sampling point is in a steady-state concentration state when switching to the second sampling point, the second sampling point will have an effect similar to a pulse input. Therefore, the analyzer will generate a small peak signal, that is, the concentration detected at the second sampling point will produce a small peak, i.e., a false peak concentration, and it will take a certain amount of time to decay to the background concentration, i.e., the decay time.

[0131] S134. Calculate the residual index from the first sampling point to the second sampling point;

[0132] The formula for the residual index is as follows: RI12 = (CP2m - Cbackground) / CP1;

[0133] Wherein, RI12 is the residual index from the first sampling point to the second sampling point, CP2m is the maximum false peak concentration at the second sampling point, CP1 is the steady-state concentration at the first sampling point, and Cbackground is the background concentration;

[0134] The residual index can determine the concentration effect of the previous sampling point on the subsequent sampling point. The larger the residual index, the higher the concentration of the previous sampling point, the greater the impact on the subsequent sampling point, and the longer the decay time required for the subsequent sampling point. Each sampling point combination needs to be tested. For example, there are eight samples, numbered sequentially from 1 to 8. The RI12 is obtained by testing sampling points 1 to 2. Sampling point 1 needs to test the seven residual indices of sampling points 2 to 8, namely RI12 to RI18. Sampling point 2 needs to test the seven residual indices of sampling points 1, 3 to 8, namely RI21, RI23 to RI28.

[0135] S135. Obtain the residual index between each sampling point to form a residual matrix of high-risk points.

[0136] The residual indices formed above are used to create a matrix, which serves as the residual matrix for high-risk points.

[0137] S2. Poll all sampling points. When switching sampling points, set the basic flushing time according to the high-risk point residual matrix and flush the common branch.

[0138] S3. Using a sliding window with a preset time, when the rate of concentration change within the sliding window is within a preset range, output the average concentration.

[0139] S4. Based on the average concentration value, compare it with the preset limit value according to the preset algorithm to analyze and obtain outliers;

[0140] S5. When an anomaly is found, increase the priority of the anomaly and increase the basic flushing time, then proceed to step S2.

[0141] Example 4

[0142] like Figure 4 As shown, a method for measuring the ventilation performance of a self-calibrating semiconductor manufacturing equipment includes the following steps:

[0143] S1. Release tracer gas at the sampling point, obtain sampling parameters, switch sampling points and form a high-risk point residual matrix;

[0144] S21. Analyze whether the steady-state concentration at the previous sampling point is greater than the preset concentration;

[0145] S22. When the steady-state concentration at the previous sampling point is greater than the preset concentration, zero gas is supplied to the common branch.

[0146] When the steady-state concentration of the previous sampling point is less than or equal to the preset concentration, proceed to step S23.

[0147] When the steady-state concentration at a current sampling point is too high, the required flushing time for that sampling point will be too long. Therefore, firstly, zero gas is introduced into the common branch to flush the common branch, which greatly reduces the cleaning time required for the current sampling point.

[0148] S23. Poll all sampling points and switch to the current sampling point;

[0149] S24. Obtain the current residual index from the previous sampling point to the current sampling point based on the high-risk point residual matrix;

[0150] S25. Calculate the basic flushing time based on the current residual index;

[0151] S26. Wash public branch roads using the basic washing time;

[0152] tflush = N × Veff / Qa;

[0153] Where tflush is the base flushing time, N is the preset flushing intensity, Veff is the effective volume of the common branch, and Qa is the flow rate of the common branch.

[0154] In this embodiment, the preset rinsing intensity can be selected as 3-5. For sampling points with a smaller residual index, a smaller preset rinsing intensity can be selected, while for sampling points with a larger residual index, a larger rinsing intensity can be selected.

[0155] S3. Using a sliding window with a preset time, when the rate of concentration change within the sliding window is within a preset range, output the average concentration.

[0156] S4. Based on the average concentration value, compare it with the preset limit value according to the preset algorithm to analyze and obtain outliers;

[0157] S5. When an anomaly is found, increase the priority of the anomaly and increase the basic flushing time, then proceed to step S2.

[0158] Example 5

[0159] like Figure 5 As shown, a method for measuring the ventilation performance of a self-calibrating semiconductor manufacturing equipment includes the following steps:

[0160] S1. Release tracer gas at the sampling point, obtain sampling parameters, switch sampling points and form a high-risk point residual matrix;

[0161] S2. Poll all sampling points. When switching sampling points, set the basic flushing time according to the high-risk point residual matrix and flush the common branch.

[0162] S31. Use a preset time as a sliding window to obtain the concentration;

[0163] Specifically, you can select 1 second as the preset time;

[0164] S32. Are the concentration change rates within the preset number of sliding windows all less than the preset change rate?

[0165] When the concentration change rate in the sliding window is greater than or equal to the preset change rate at least once within the preset number of times, proceed to step S32.

[0166] The sliding window is used to determine whether the current sampling point has reached a steady state. The preset number of iterations is set to 3. Therefore, if the concentration change rate over three consecutive seconds is less than the preset change rate, it indicates that the current sampling point has reached a steady state. Specifically, the preset change rate can be selected as |dC / dt| < 0.02 ppb / s.

[0167] S33. When the concentration change rate within the sliding window for a preset number of times is less than the preset change rate, obtain and analyze whether the concentration difference within the sliding window for a preset number of times is less than the preset difference range.

[0168] If the concentration variance within the sliding window is greater than or equal to the preset variance range at least once within the preset number of times, proceed to step S32.

[0169] When the preset rate of change meets the requirements, it indicates that the sliding window has reached a steady state. Then, by judging the concentration variance, it can be analyzed whether there is any abnormality in the current concentration.

[0170] S34. When the concentration variance within the preset number of sliding windows is less than the preset variance range, the concentration is obtained by using the preset effective time as the effective data window, and the average concentration is output.

[0171] S35. Time correction is performed on the effective data window based on the sampling parameters. Specifically, due to the existence of the common branch, there is a time difference between the concentration of the tracer gas received by the analyzer and the current concentration at the sampling point. The time corresponding to all concentrations is advanced by t50 time using the t50 time in the sampling parameters. The concentration corresponding to the corrected time is the concentration corresponding to the current sampling point, which facilitates the formation of a concentration time series.

[0172] S41. Calculate the equivalent leakage concentration based on the average concentration;

[0173] ERC=Cprocess×Ctracer_measured / Ctracer_injected;

[0174] Where ERC is the equivalent leakage concentration, Cprocess is the medium concentration, Ctracer_measured is the average concentration, and Ctracer_injected is the release concentration of the tracer gas;

[0175] S42. Analyze whether the equivalent leakage concentration is greater than a preset limit;

[0176] When the equivalent leakage concentration is less than or equal to the preset limit, proceed to step S2.

[0177] S43. When the equivalent leakage concentration is greater than the preset limit, record the current average concentration and its corresponding sampling point as an anomaly point.

[0178] By analyzing the average concentration obtained and converting it to an equivalent leakage concentration, the concentration of each hazardous gas at the moment of leakage can be determined. Combined with the comparison of applicable occupational exposure limits, the ventilation performance of semiconductor manufacturing equipment can be accurately judged.

[0179] S51. When an anomaly is found, the common branch line is supplied with zero gas.

[0180] S52. Increase the priority of the next sampling point polling process for outliers;

[0181] S53. Increase the basic flushing time for abnormal points and proceed to step S2.

[0182] When an anomaly is found, the priority and flushing time of the anomaly will be increased in the next round of polling. Specifically, for sampling points 1-8, when sampling points 2 and 3 are anomalies, sampling points 2 and 3 will be treated as anomalies and zero gas will be directly supplied to the common branch. At the same time, in the next round of polling, the concentration will be obtained in the order of 2, 3, 1, 4... to reduce the time interval between sampling of anomalies.

[0183] Users can accurately pinpoint potential anomalies based on the time of anomalies at each sampling point and the recovery time.

[0184] Example 6

[0185] like Figures 1 to 5 As shown, a method for measuring the ventilation performance of a self-calibrating semiconductor manufacturing equipment includes the following steps:

[0186] S111, Release the tracer gas input by the pulse at the current sampling point;

[0187] S112. Select the analysis branch corresponding to the first sampling point;

[0188] S113. Calculate the pulse sampling parameters of the current sampling point; the pulse sampling parameters include: peak value parameter and duration parameter;

[0189] S114. Analyze whether the current sampling point is the final sampling point;

[0190] If the current sampling point is not the final sampling point, proceed to step S111.

[0191] When the current sampling point is the final sampling point, proceed to step S12.

[0192] S121. Release the tracer gas with a step input to the current sampling point;

[0193] S122. Select the analysis branch corresponding to the current sampling point;

[0194] S123. Calculate the step sampling parameters of the current sampling point; the step sampling parameters include: transmission delay parameters, rise response parameters, and tailing parameters;

[0195] S124. Analyze whether the current sampling point is the final sampling point;

[0196] If the current sampling point is not the final sampling point, proceed to step S121.

[0197] When the current sampling point is the final sampling point, proceed to step S13.

[0198] S131. Release the tracer gas with a step input to the first sampling point;

[0199] S132. When the first sampling point is in a steady state of concentration, switch to the second sampling point;

[0200] S133. Record the false peak concentration and decay time at the second sampling point;

[0201] S134. Calculate the residual index from the first sampling point to the second sampling point;

[0202] The formula for the residual index is as follows: RI12 = (CP2m - Cbackground) / CP1;

[0203] Wherein, RI12 is the residual index from the first sampling point to the second sampling point, CP2m is the maximum false peak concentration at the second sampling point, CP1 is the steady-state concentration at the first sampling point, and Cbackground is the background concentration;

[0204] S135. Obtain the residual index between each sampling point to form a residual matrix of high-risk points.

[0205] S21. Analyze whether the steady-state concentration at the previous sampling point is greater than the preset concentration;

[0206] S22. When the steady-state concentration at the previous sampling point is greater than the preset concentration, zero gas is supplied to the common branch.

[0207] When the steady-state concentration of the previous sampling point is less than or equal to the preset concentration, proceed to step S23.

[0208] S23. Poll all sampling points and switch to the current sampling point;

[0209] S24. Obtain the current residual index from the previous sampling point to the current sampling point based on the high-risk point residual matrix;

[0210] S25. Calculate the basic flushing time based on the current residual index;

[0211] S26. Wash public branch roads using the basic washing time;

[0212] tflush = N × Veff / Qa;

[0213] Where tflush is the base flushing time, N is the preset flushing intensity, Veff is the effective volume of the common branch, and Qa is the flow rate of the common branch.

[0214] S31. Use a preset time as a sliding window to obtain the concentration;

[0215] S32. Check whether the concentration change rate within the sliding window for a preset number of times is less than the preset change rate;

[0216] When the concentration change rate in the sliding window is greater than or equal to the preset change rate at least once within the preset number of times, proceed to step S32.

[0217] S33. When the concentration change rate within the sliding window for a preset number of times is less than the preset change rate, obtain and analyze whether the concentration difference within the sliding window for a preset number of times is less than the preset difference range.

[0218] If the concentration variance within the sliding window is greater than or equal to the preset variance range at least once within the preset number of times, proceed to step S32.

[0219] S34. When the concentration variance within the preset number of sliding windows is less than the preset variance range, the concentration is obtained by using the preset effective time as the effective data window, and the average concentration is output.

[0220] S35. Perform time correction on the effective data window based on the sampling parameters.

[0221] S41. Calculate the equivalent leakage concentration based on the average concentration;

[0222] ERC=Cprocess×Ctracer_measured / Ctracer_injected;

[0223] Where ERC is the equivalent leakage concentration, Cprocess is the medium concentration, Ctracer_measured is the average concentration, and Ctracer_injected is the release concentration of the tracer gas;

[0224] S42. Analyze whether the equivalent leakage concentration is greater than a preset limit;

[0225] When the equivalent leakage concentration is less than or equal to the preset limit, proceed to step S2.

[0226] S43. When the equivalent leakage concentration is greater than the preset limit, record the current average concentration and its corresponding sampling point as an anomaly point.

[0227] S51. When an anomaly is found, the common branch line is supplied with zero gas.

[0228] S52. Increase the priority of the next sampling point polling process for outliers;

[0229] S53. Increase the basic flushing time for abnormal points and proceed to step S2.

[0230] Specifically, the test system is first configured. After the system is configured, the entire system is initialized and calibrated with zero gas. The analyzer is initialized and the baseline is recorded. At the same time, the background concentration is obtained by testing with the analyzer.

[0231] It should be noted that the above embodiments can be freely combined as needed. The above description is only a preferred embodiment of the present invention. It should be pointed out that for those skilled in the art, several improvements and modifications can be made without departing from the principle of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A method for measuring the ventilation performance of self-calibrated semiconductor manufacturing equipment, characterized in that, Includes the following steps: S1. Release tracer gas at the sampling point, obtain sampling parameters, switch sampling points and form a high-risk point residual matrix; S2. Poll all sampling points. When switching sampling points, set the basic flushing time according to the high-risk point residual matrix and flush the common branch. S3. Using a sliding window with a preset time, when the rate of concentration change within the sliding window is within a preset range, output the average concentration. S4. Based on the average concentration value, compare it with the preset limit value according to the preset algorithm to analyze and obtain outliers; S5. When an anomaly is found, increase the priority of the anomaly and increase the basic flushing time, then proceed to step S2.

2. The method for measuring the ventilation performance of a self-calibrated semiconductor manufacturing equipment according to claim 1, characterized in that, Step S1 specifically includes: S11. Release the tracer gas with pulse input to the current sampling point and analyze to obtain the pulse sampling parameters of each sampling point; S12. Release the tracer gas with a step input to the current sampling point and analyze to obtain the step sampling parameters of each sampling point; S13. When the first sampling point is in a steady state of concentration, switch to the second sampling point, record the residual index, and form a residual matrix of high-risk points.

3. The method for measuring the ventilation performance of a self-calibrated semiconductor manufacturing equipment according to claim 2, characterized in that, Step S11 specifically includes: S111, Release the tracer gas input by the pulse at the current sampling point; S112. Select the analysis branch corresponding to the first sampling point; S113. Calculate the pulse sampling parameters of the current sampling point; the pulse sampling parameters include: peak value parameter and duration parameter; S114. Analyze whether the current sampling point is the final sampling point; If the current sampling point is not the final sampling point, proceed to step S111. When the current sampling point is the final sampling point, proceed to step S12.

4. The method for measuring the ventilation performance of a self-calibrated semiconductor manufacturing equipment according to claim 2, characterized in that, Step S12 specifically includes: S121. Release the tracer gas with a step input to the current sampling point; S122. Select the analysis branch corresponding to the current sampling point; S123. Calculate the step sampling parameters of the current sampling point; the step sampling parameters include: transmission delay parameters, rise response parameters, and tailing parameters; S124. Analyze whether the current sampling point is the final sampling point; If the current sampling point is not the final sampling point, proceed to step S121. When the current sampling point is the final sampling point, proceed to step S13.

5. The method for measuring the ventilation performance of a self-calibrated semiconductor manufacturing equipment according to claim 4, characterized in that, Step S13 specifically includes: S131. Release the tracer gas with a step input to the first sampling point; S132. When the first sampling point is in a steady state of concentration, switch to the second sampling point; S133. Record the false peak concentration and decay time at the second sampling point; S134. Calculate the residual index from the first sampling point to the second sampling point; The formula for the residual index is as follows: RI12 = (CP2m - Cbackground) / CP1; Wherein, RI12 is the residual index from the first sampling point to the second sampling point, CP2m is the maximum false peak concentration at the second sampling point, CP1 is the steady-state concentration at the first sampling point, and Cbackground is the background concentration; S135. Obtain the residual index between each sampling point to form a residual matrix of high-risk points.

6. The method for measuring the ventilation performance of a self-calibrated semiconductor manufacturing equipment according to claim 1, characterized in that, Step S2 specifically includes: S23. Poll all sampling points and switch to the current sampling point; S24. Obtain the current residual index from the previous sampling point to the current sampling point based on the high-risk point residual matrix; S25. Calculate the basic flushing time based on the current residual index; S26. Public branch roads shall be flushed using the basic flushing time. tflush = N × Veff / Qa; Where tflush is the base flushing time, N is the preset flushing intensity, Veff is the effective volume of the common branch, and Qa is the flow rate of the common branch.

7. The method for measuring the ventilation performance of a self-calibrated semiconductor manufacturing equipment according to claim 6, characterized in that, Step S22 includes the following: S21. Analyze whether the steady-state concentration at the previous sampling point is greater than the preset concentration; S22. When the steady-state concentration at the previous sampling point is greater than the preset concentration, zero gas is supplied to the common branch. When the steady-state concentration of the previous sampling point is less than or equal to the preset concentration, proceed to step S23.

8. The method for measuring the ventilation performance of a self-calibrated semiconductor manufacturing equipment according to claim 1, characterized in that, Step S3 specifically includes: S31. Use a preset time as a sliding window to obtain the concentration; S32. Check whether the concentration change rate within the sliding window for a preset number of times is less than the preset change rate; When the concentration change rate in the sliding window is greater than or equal to the preset change rate at least once within the preset number of times, proceed to step S32. S33. When the concentration change rate within the sliding window for a preset number of times is less than the preset change rate, obtain and analyze whether the concentration difference within the sliding window for a preset number of times is less than the preset difference range. If the concentration variance within the sliding window is greater than or equal to the preset variance range at least once within the preset number of times, proceed to step S32. S34. When the concentration variance within the preset number of sliding windows is less than the preset variance range, the concentration is obtained by using the preset effective time as the effective data window, and the average concentration is output. S35. Perform time correction on the effective data window based on the sampling parameters.

9. The method for measuring the ventilation performance of a self-calibrated semiconductor manufacturing equipment according to claim 1, characterized in that, Step S4 specifically includes: S41. Calculate the equivalent leakage concentration based on the average concentration; ERC=Cprocess×Ctracer_measured / Ctracer_injected; Where ERC is the equivalent leakage concentration, Cprocess is the medium concentration, Ctracer_measured is the average concentration, and Ctracer_injected is the release concentration of the tracer gas; S42. Analyze whether the equivalent leakage concentration is greater than a preset limit; When the equivalent leakage concentration is less than or equal to the preset limit, proceed to step S2. S43. When the equivalent leakage concentration is greater than the preset limit, record the current average concentration and its corresponding sampling point as an anomaly point.

10. The method for measuring the ventilation performance of a self-calibrated semiconductor manufacturing equipment according to claim 1, characterized in that, Step S5 specifically includes: S51. When an anomaly is found, the common branch line is supplied with zero gas. S52. Increase the priority of the next sampling point polling process for outliers; S53. Increase the basic flushing time for abnormal points and proceed to step S2.

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