High frequency module and communication device

Abstract

Provided is a high-frequency module and a communication device capable of reducing degradation in the characteristics of a low-noise amplifier. The high-frequency module includes a first elastic wave filter, a low-noise amplifier, a second elastic wave filter, and a capacitor. The first elastic wave filter has a first input portion and a first output portion. The low-noise amplifier has an input portion and an output portion. The input portion of the low-noise amplifier is connected to the first output portion of the first elastic wave filter. The second elastic wave filter has a second input portion and a second output portion. The second input portion of the second elastic wave filter is connected to the output portion of the low-noise amplifier. The capacitor is connected to the second output portion of the second elastic wave filter.

Description

Technical Field

[0001] The present invention generally relates to a high-frequency module and a communication device, and more specifically, to a high-frequency module having a low-noise amplifier and a communication device having the above-mentioned high-frequency module. Background Technology

[0002] The front-end circuit described in Patent Document 1 includes a multiplexer and a low-noise amplifier. The multiplexer has multiple filters. The input of the low-noise amplifier is connected to the output of one of the multiple filters. The output of the low-noise amplifier is connected to an external RFIC (Radio Frequency Integrated Circuit) of the front-end circuit.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2021-125775 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] In the front-end circuit described in Patent Document 1, during the process of connecting the output of the low-noise amplifier to the RFIC, static electricity sometimes flows into the low-noise amplifier from its output. Furthermore, when adjusting the characteristics of the front-end circuit after connecting the RFIC to the output of the low-noise amplifier, static electricity sometimes flows into the low-noise amplifier from its output. When static electricity flows into the low-noise amplifier, its characteristics may deteriorate.

[0008] In view of the above-mentioned problems, the present invention aims to provide a high-frequency module and communication device that can reduce the degradation of the characteristics of a low-noise amplifier.

[0009] Solution for solving the problem

[0010] One embodiment of the present invention relates to a high-frequency module comprising a first elastic wave filter, a low-noise amplifier, a second elastic wave filter, and a capacitor. The first elastic wave filter has a first input and a first output. The low-noise amplifier has an input and an output. The input is connected to the first output of the first elastic wave filter. The second elastic wave filter has a second input and a second output. The second input is connected to the output of the low-noise amplifier. The capacitor is connected to the second output of the second elastic wave filter.

[0011] One embodiment of the present invention relates to a communication device comprising the aforementioned high-frequency module and signal processing circuitry. The signal processing circuitry is connected to the high-frequency module and performs signal processing on the high-frequency signals.

[0012] The effects of the invention

[0013] The high-frequency module and communication device according to the present invention have the advantage of reducing the degradation of the characteristics of low-noise amplifiers caused by static electricity. Attached Figure Description

[0014] Figure 1 This is a structural diagram of the high-frequency module and communication device involved in Implementation Method 1.

[0015] Figure 2 This is a structural diagram of the second elastic wave filter possessed by the same high-frequency module as above.

[0016] Figure 3 This is a structural diagram of the longitudinally coupled elastic wave filter of the second elastic wave filter mentioned above.

[0017] Figure 4 This is an explanatory diagram illustrating an example of the configuration relationship of the structural elements of the high-frequency module described above.

[0018] Figure 5 This is an explanatory diagram illustrating an example of the configuration relationship of the structural elements of the high-frequency module involved in Embodiment 2.

[0019] Figure 6 This is an explanatory diagram illustrating an example of the configuration relationship of the structural elements of the high-frequency module involved in Embodiment 3.

[0020] Figure 7 This is an explanatory diagram illustrating an example of the configuration relationship of the structural elements of the high-frequency module involved in Embodiment 4.

[0021] Figure 8 This is a structural diagram of the low-noise amplifier included in the high-frequency module involved in Embodiment 5.

[0022] Figure 9 This is an explanatory diagram illustrating an example of the configuration relationship of the structural elements of the high-frequency module involved in embodiments 5 and 6.

[0023] Figure 10 This is an explanatory diagram illustrating an example of the configuration relationship of the structural elements of the high-frequency module involved in Embodiment 7.

[0024] Figure 11 This is an explanatory diagram illustrating an example of the configuration relationship of the structural elements of the high-frequency module involved in Embodiment 8.

[0025] Figure 12This is a top view showing the state in which electronic components are arranged in the receiving recess of the multilayer substrate of the high-frequency module according to Embodiment 9.

[0026] Figure 13 yes Figure 12 Cross-sectional view of line X1-X1. Detailed Implementation

[0027] (Implementation Method 1)

[0028] The high-frequency module 1 according to Embodiment 1 will be described in detail with reference to the accompanying drawings. The figures described in the following embodiments are schematic and the size and thickness ratios of the structural elements in the figures may not reflect the actual size ratios.

[0029] (1) Summary

[0030] like Figure 1 As shown, the high-frequency module 1 according to Embodiment 1 includes a first elastic wave filter 24, a low-noise amplifier 25, a second elastic wave filter 26, and a capacitor C1. The first elastic wave filter 24 has a first input section 241a and a first output section 241b. The low-noise amplifier 25 has an input section 25a and an output section 25b. The input section 25a of the low-noise amplifier 25 is connected to the first output section 241b of the first elastic wave filter 24. The second elastic wave filter 26 has a second input section 26a and a second output section 26b. The second input section 26a of the second elastic wave filter 26 is connected to the output section 25b of the low-noise amplifier 25. The capacitor C1 is connected to the second output section 26b of the second elastic wave filter 26.

[0031] According to this structure, the inflow of static electricity from the post-stage side of the second elastic wave filter 26 into the output section 25b of the low-noise amplifier 25 can be reduced by the second elastic wave filter 26 connected to the output section 25b of the second elastic wave filter 26. Furthermore, the inflow of static electricity into the output section 25b of the low-noise amplifier 25 can be further reduced by the capacitor C1 connected to the second output section 26b of the second elastic wave filter 26. Therefore, the characteristic degradation of the low-noise amplifier 25 caused by static electricity flowing into the low-noise amplifier 25 from the output section 25b can be reduced. In other words, the characteristic degradation of the low-noise amplifier 25 caused by static electricity can be reduced.

[0032] (2) Details

[0033] (2-1) Overall Structure

[0034] Reference Figure 1 The high-frequency module 1 and the communication device 100 involved in Embodiment 1 will be described below. The communication device 100 includes the high-frequency module 1.

[0035] like Figure 1 As shown, the high-frequency module 1 is, for example, a module capable of supporting both 4G (fourth-generation mobile communication) and 5G (fifth-generation mobile communication) standards. The 4G standard is, for example, 3GPP (Third Generation Partnership Project) or LTE (Long Term Evolution). The 5G standard is, for example, 5G NR (New Radio).

[0036] The communication device 100 includes a high-frequency module 1, a signal processing circuit 102, and an antenna 103.

[0037] The high-frequency module 1 is configured to amplify the received signal (high-frequency signal) received by the antenna 103 and output it to the signal processing circuit 102. Additionally, the high-frequency module 1 is configured to amplify the transmitted signal (high-frequency signal) output from the signal processing circuit 102 and transmit it from the antenna 103. The high-frequency module 1 is controlled, for example, by the signal processing circuit 102.

[0038] The signal processing circuit 102 is connected to the high-frequency module 1 and is configured to process the received signal output from the high-frequency module 1. Additionally, the signal processing circuit 102 is configured to process the transmitted signal to be output to the high-frequency module 1. The signal processing circuit 102 includes an RF (Radio Frequency) signal processing circuit 121 and a baseband signal processing circuit 122.

[0039] The RF signal processing circuit 121 is, for example, an RFIC (Radio Frequency Integrated Circuit) that processes high-frequency signals (transmit and receive signals). The RF signal processing circuit 121 performs down-conversion and other signal processing on the received signal output from the high-frequency module 1 before outputting it to the baseband signal processing circuit 122. Conversely, the RF signal processing circuit 121 performs up-conversion and other signal processing on the transmitted signal output from the baseband signal processing circuit 122 before outputting it to the high-frequency module 1.

[0040] The baseband signal processing circuit 122 is, for example, a BBIC (Baseband Integrated Circuit). The baseband signal processing circuit 122 outputs the received signal from the RF signal processing circuit 121 to the outside. This output signal (received signal) can be used, for example, as an image signal for image display, or as an audio signal for communication. Additionally, the baseband signal processing circuit 122 generates a transmit signal based on the baseband signal (e.g., audio and image signals) input from the outside, and outputs the generated transmit signal to the RF signal processing circuit 121.

[0041] (2-2) Structure of the high-frequency module

[0042] The high-frequency module 1 transmits or receives signals from multiple frequency bands. In Embodiment 1, the high-frequency module 1 transmits or receives signals from three frequency bands, for example: GNSS (L1), MHB (Middle High Band), and UHB (Ultra High Band). GNSS (L1) is, for example, a frequency band between 1500 MHz and 1600 MHz. MHB is, for example, a frequency band between 1427 MHz and 2690 MHz. UHB is, for example, a frequency band between 3300 MHz and 5000 MHz.

[0043] The high-frequency module 1 has multiple external terminals 110a~110d, a multiplexer circuit 2, power amplifiers 3 and 4, and matching circuits 5, 6 and 7.

[0044] External terminal 110a is the antenna terminal for connecting antenna 103. External terminal 110b is connected to the input section (not shown) of signal processing circuit 102 and is the output terminal for inputting the received signal processed by high-frequency module 1 to the input section of signal processing circuit 102. External terminals 110c and 110d are respectively connected to the output section (not shown) of signal processing circuit 102 and are the input terminals for inputting the transmitted signal processed by signal processing circuit 102 to high-frequency module 1.

[0045] Multiplexer circuit 2 separates signals from multiple frequency bands (e.g., GNSS(L1), UHB, MHB) according to each band. Multiplexer circuit 2 is, for example, a multiplexer circuit with a low-noise amplifier 25 corresponding to the GNSS(L1) band. Multiplexer circuit 2 includes a common terminal 21a and multiple (in...) Figure 1 In the example, there are three components: substrate terminals 21b-21d, first elastic wave filter 24, second elastic wave filter 26, LC filter circuit 27, low noise amplifier 25, capacitor C1, input-side inductor L10, and output-side inductor L2.

[0046] Common terminal 21a is the terminal that connects to antenna terminal 110a. Figure 1 In this example, the common terminal 21a is connected to the external terminal 110a (i.e., the antenna terminal) via the matching circuit 5. The plurality of substrate terminals 21b-21d are terminals that are directly or indirectly connected to the external terminals 110b-110d of the plurality of external terminals 110a-110d of the high-frequency module 1, excluding the external terminal 110a (antenna terminal). The term "direct connection" refers to a connection to the external terminal without via electronic components. Conversely, the term "indirect connection" refers to a connection via electronic components. Figure 1 In this example, substrate terminal 21b is directly connected to external terminal 110b. Substrate terminal 21c is indirectly connected to external terminal 110c via matching circuit 6 and power amplifier 3. Substrate terminal 21d is indirectly connected to external terminal 110d via matching circuit 7 and power amplifier 4. Multiple substrate terminals 21b-21d correspond to the aforementioned multiple frequency bands (e.g., GNSS(L1), MHB, UHB) for signal flow in the corresponding frequency band. Substrate terminal 21b, for example, corresponds to the GNSS(L1) frequency band. Substrate terminal 21c, for example, corresponds to the MHB frequency band. Substrate terminal 21d, for example, corresponds to the UHB frequency band.

[0047] The LC filter circuit 22 includes one or more inductors and one or more capacitors. The LC filter circuit 22 has an input section and an output section. The input section of the LC filter circuit 22 is connected to a common terminal 21a. The output section of the LC filter circuit 22 is connected to the first input section 241a of the first elastic wave filter 24 (described later). The LC filter circuit 22 allows signals from the first frequency band (e.g., GNSS (L1)) and the second frequency band (e.g., MHB) of the input signal input to the input section of the LC filter circuit 22 to pass through, while blocking signals from unwanted frequency bands (e.g., 4.6 GHz, 5.1 GHz).

[0048] The LC filter circuit 23 includes one or more inductors and one or more capacitors. The LC filter circuit 23 has an input section and an output section. The input section of the LC filter circuit 23 is connected to a common terminal 21a. The output section of the LC filter circuit 23 is connected to a substrate terminal 21d. The LC filter circuit 23 allows signals in the third frequency band (e.g., UHB) of the input signal input to its input section to pass through, while blocking signals in unwanted frequency bands (e.g., 1.5GHz, 2.5GHz).

[0049] The first elastic wave filter 24 extracts signals from the first frequency band and the second frequency band from the output signal of the LC filter circuit 22. It outputs the extracted first frequency band signal to the first signal path SK1 and the extracted second frequency band signal to the second signal path SK2. The first signal path SK1 is the signal path for the first frequency band signal and is connected to the substrate terminal 21b. The second signal path SK2 is the signal path for the second frequency band signal and is connected to the substrate terminal 21c. The first elastic wave filter 24 branches the signal path SK0 connected to the output of the LC filter circuit 23 into two signal paths (the first signal path SK1 and the second signal path SK2).

[0050] The first elastic wave filter 24 has a first input section 241a and multiple (in) Figure 1 In the example, there are two) first output sections 241b and 241c, and multiple (in Figure 1 In this example, there are two filters (first filter 242 and second filter 243).

[0051] The first input section 241a is connected to the output section of the LC filter circuit 22 via signal path SK0. The first output section 241b is connected to the substrate terminal 21b via the first signal path SK1. The first output section 241c is connected to the substrate terminal 21c via the second signal path SK2.

[0052] The first signal path SK1 is connected to an input-side inductor L10, a low-noise amplifier 25, a second elastic wave filter 26, a capacitor C1, and an output-side inductor L2. The second signal path SK2 is connected to an LC filter circuit 27.

[0053] The first filter 242 is, for example, a trapezoidal filter comprising one or more series resonators and one or more parallel resonators. The first filter 242 has an input section and an output section. The input section of the first filter 242 is connected to a first input section 241a. The output section of the first filter 242 is connected to a first output section 241b. The first output section 241b is the first output of one of two first output sections 241b and 241c. The first filter 242 allows signals in the first frequency band of the input signal input to the input section of the first filter 242 to pass through, cuts off signals in unwanted frequency bands, and outputs the passed signal from the output section of the first filter 242 to the first output section 241b.

[0054] The second filter 243 is, for example, a trapezoidal filter comprising one or more series resonators and one or more parallel resonators. The second filter 243 has an input section and an output section. The input section of the second filter 243 is connected to the first input section 241a. The output section of the second filter 243 is connected to the first output section 241c. The first output section 241c is the remaining first output section among the two first output sections 241b and 241c. The second filter 243 allows signals in the second frequency band of the input signal input to the input section of the second filter 243 to pass through, cuts off signals in unwanted frequency bands, and outputs the passed signal from the output section of the second filter 243 to the first output section 241c.

[0055] The low-noise amplifier 25 is connected to the first output section 241b of the first elastic wave filter 24 via an input-side inductor L10. The low-noise amplifier 25 has an input section 25a and an output section 25b. The input section 25a is connected to the first output section 241b of the first elastic wave filter 24 via the input-side inductor L10. The output section 25b is connected to the second input section 26a of the second elastic wave filter 26. The low-noise amplifier 25 amplifies the input signal input to the input section 25a and outputs the amplified input signal from the output section 25b to the second elastic wave filter 26.

[0056] An input-side inductor L10 is connected in series between the first output portion 241b of the first elastic wave filter 24 and the input portion 25a of the low-noise amplifier 25. The input-side inductor L10 has a first terminal and a second terminal. The first terminal of the input-side inductor L10 is connected to the first output portion 241b of the first elastic wave filter 24. The second terminal of the input-side inductor L10 is connected to the input portion 25a of the low-noise amplifier 25. That is, the input-side inductor L10 is connected to the input side of the low-noise amplifier 25. In Embodiment 1, the first filter 242 suppresses the flow of signals from the second frequency band (e.g., MHB) into the first signal path SK1. The input-side inductor L10 further suppresses the flow of signals from the second frequency band (e.g., MHB) into the first signal path SK1.

[0057] The second elastic wave filter 26 is, for example, a SAW (Surface Acoustic Wave) filter. The second elastic wave filter 26 has a second input section 26a and a second output section 26b. The second input section 26a is connected to the output section 25b of the low-noise amplifier 25. The second output section 26b is connected to the substrate terminal 21b via a capacitor C1 and an output-side inductor L2. The second elastic wave filter 26 allows signals in the first frequency band of the input signal input to the second input section 26a to pass through, cuts off unwanted signals, and outputs the passed signals from the second output section 26b.

[0058] Capacitor C1 is connected to the second output portion 26b of the second elastic wave filter 26. More specifically, capacitor C1 is connected in series between the second output portion 26b of the second elastic wave filter 26 and the substrate terminal 21b (in... Figure 1 In this example, the output of the second elastic wave filter 26 is connected to the first terminal of the output-side inductor L2 (described later). Capacitor C1 has a first terminal and a second terminal. The first terminal of capacitor C1 is connected to the second output 26b of the second elastic wave filter 26. The second terminal of capacitor C1 is connected to the substrate terminal 21b via the output-side inductor L2.

[0059] Capacitor C1 is used to handle ESD (Electrostatic Discharge). More specifically, it reduces the inflow of static electricity from the substrate terminal 21b into the multiplexer circuit 2 and into the second elastic wave filter 26 and the low-noise amplifier 25. This reduces the degradation of the characteristics of the second elastic wave filter 26 and the low-noise amplifier 25 caused by static electricity. The second elastic wave filter 26, like capacitor C1, also functions to reduce the inflow of static electricity from the substrate terminal 21b into the multiplexer circuit 2 and into the low-noise amplifier 25.

[0060] Output-side inductor L2 is connected to the second output portion 26b of the second elastic wave filter 26. That is, output-side inductor L2 is connected to the output side of the second elastic wave filter 26. Output-side inductor L2 is connected in series with capacitor C1. More specifically, output-side inductor L2 is connected in series between capacitor C1 and substrate terminal 21b. Output-side inductor L2 has a first terminal and a second terminal. The first terminal of output-side inductor L2 is connected to the second terminal of capacitor C1. The second terminal of output-side inductor L2 is connected to substrate terminal 21b. Furthermore, the configuration of capacitor C1 and output-side inductor L2 can be interchanged. Capacitor C1 and output-side inductor L2 constitute a matching circuit for impedance matching between external terminal 110b and the second elastic wave filter 26.

[0061] LC filter circuit 27 has one or more (in Figure 1 In the example, there are two inductors L3 and L4, and one or more (in... Figure 1In this example, there are two capacitors, C2 and C3. The LC filter circuit 27 also includes an input section 27a and an output section 27b. The input section 27a is connected to the first output section 241c of the first elastic wave filter 24. The first output section 241c is the remaining first output section of the two first output sections 241b and 241c. The output section 27b is connected to the substrate terminal 21c. The inductor L3 is connected in series in the portion (signal path) between the input section 27a and the output section 27b on the second signal path SK2. The inductor L4 is connected between the portion (signal path) between the input section 27a and the output section 27b on the second signal path SK2 and ground. The capacitor C2 is connected in parallel with the inductor L3. The capacitor C3 is connected in series with the inductor L4. Figure 1 In the example, capacitor C3 is connected between inductor L4 and ground. Inductor L3 and capacitor C2 form an attenuation pole to remove unwanted frequency bands (e.g., 3.4 GHz). Inductor L4 and capacitor C3 form an attenuation pole to remove unwanted frequency bands (e.g., 0.9 GHz).

[0062] Power amplifier 3 is connected between substrate terminal 21c and external terminal 110c. Power amplifier 3 has an input section and an output section. The input section of power amplifier 3 is connected to external terminal 110c. The output section of power amplifier 3 is connected to substrate terminal 21c via matching circuit 6. Power amplifier 3 amplifies the input signal input to its input section and outputs the amplified input signal to substrate terminal 21c via matching circuit 6.

[0063] Power amplifier 4 is connected between substrate terminal 21d and external terminal 110d. Power amplifier 4 has an input section and an output section. The input section of power amplifier 4 is connected to external terminal 110d. The output section of power amplifier 4 is connected to substrate terminal 21d via matching circuit 7. Power amplifier 4 amplifies the input signal input to its input section and outputs the amplified input signal to substrate terminal 21d via matching circuit 7.

[0064] Matching circuit 5 is connected between antenna terminal 110a and common terminal 21a. Matching circuit 5 achieves impedance matching between antenna terminal 110a and multiplexer circuit 2. Matching circuit 6 is connected between the output of power amplifier 3 and substrate terminal 21c. Matching circuit 6 achieves impedance matching between power amplifier 3 and multiplexer circuit 2. Matching circuit 7 is connected between the output of power amplifier 4 and substrate terminal 21d. Matching circuit 7 achieves impedance matching between power amplifier 4 and multiplexer circuit 2.

[0065] (2-3) Structure of the second elastic wave filter

[0066] like Figure 2 As shown, the second elastic wave filter 26 includes a second input section 26a, a second output section 26b, and one or more (in) Figure 2 In the example, there are two longitudinally coupled elastic wave filters F1 and F2, and one or more (in Figure 2 In the example, there are two harmonic oscillators S1 and S2.

[0067] The second input section 26a is connected to the output section 25b of the low-noise amplifier 25. The second output section 26b is connected to one end of the capacitor C1.

[0068] like Figure 3 As shown, the longitudinally coupled elastic wave filter F1 has multiple (in Figure 2 In this example, there are 5 IDT (Interdigital Transducer) electrodes d1~d5.

[0069] like Figure 3 As shown, each of the IDT electrodes d1 to d5 has a plurality of first electrode fingers 40, a plurality of second electrode fingers 41, a first bus bar 42, and a second bus bar 43. The plurality of first electrode fingers 40 are arranged in parallel with each other. The plurality of second electrode fingers 41 are arranged in parallel with each other. The plurality of second electrode fingers 41 are disposed between the plurality of first electrode fingers 40. That is, the plurality of first electrode fingers 40 and the plurality of second electrode fingers 41 are arranged in an alternating arrangement. The first bus bar 42 is disposed on one side of the plurality of first electrode fingers 40 and connected to one end of each of the plurality of first electrode fingers 40. The second bus bar 43 is disposed on the other side of the plurality of second electrode fingers 41 and connected to the other end of each of the plurality of second electrode fingers 41.

[0070] The multiple IDT electrodes d1~d5 of the longitudinally coupled elastic wave filter F1 are configured along the direction of the multiple first electrode fingers 40 and multiple second electrode fingers 41 of each IDT electrode d1~d5. Figure 2 The even-numbered IDT electrodes d2 and d4 among the multiple IDT electrodes d1~d5 are arranged in a row (vertical direction on the paper). The first busbar 42 of the even-numbered IDT electrodes d2 and d4 among the multiple IDT electrodes d1~d5 is interconnected by wiring h1 and connected to the second input section 26a (see reference). Figure 2 The second busbar 43 of the odd-numbered IDT electrodes d1, d3, and d5 among the multiple IDT electrodes d1~d5 is interconnected through wiring h2, and is connected to the two resonators S1 and S2 (see reference). Figure 2 Connect the first end of each of the two ends (the first end and the second end).

[0071] The longitudinally coupled elastic wave filter F2 is similar to the longitudinally coupled elastic wave filter F1, as follows: Figure 2As shown, it has multiple (in) Figure 2 In the example, there are 5 IDT (Inter-Digital Transducer) electrodes d1 to d5. The structure of the IDT electrodes d1 to d5 of the longitudinally coupled elastic wave filter F2 is the same as that of the IDT electrodes d1 to d5 of the longitudinally coupled elastic wave filter F1. Therefore, the structures of the IDT electrodes d1 to d5 of the longitudinally coupled elastic wave filter F2 that are the same as those of the IDT electrodes d1 to d5 of the longitudinally coupled elastic wave filter F1 will be described using the same reference numerals. Furthermore, refer to the longitudinally coupled elastic wave filter F1 with IDT electrodes d1 to d5 shown. Figure 3 To illustrate the multiple IDT electrodes d1~d5 of the same structure of the longitudinally coupled elastic wave filter F2.

[0072] Multiple IDT electrodes d1~d5 of longitudinally coupled elastic wave filter F2 (refer to) Figure 3 ) is configured to be aligned along the direction of the plurality of first electrode fingers 40 and second electrode fingers 41 of each IDT electrode d1~d5. Figure 2 The electrodes are arranged in a row (vertically on the paper). The first busbar 42 of the even-numbered IDT electrodes d2 and d4 among the multiple IDT electrodes d1~d5 is interconnected by wiring h3 and connected to the second output section 26b. The second busbar 43 of the odd-numbered IDT electrodes d1, d3, and d5 among the multiple IDT electrodes d1~d5 is interconnected by wiring h4 and connected to the second end (first end and second end) of each of the two resonators S1 and S2.

[0073] Two resonators S1 and S2 are connected between longitudinally coupled elastic wave filters F1 and F2. The two resonators S1 and S2 are connected in parallel (see reference). Figure 2 Two resonators S1 and S2 are series resonators connected in series in the signal path between the second input section 26a and the second output section 26b. More specifically, one end of each of the two resonators S1 and S2 is connected via wiring h2 to the second busbar 43 of the odd-numbered IDT electrodes d1, d3, and d5 of the longitudinally coupled elastic wave filter F1. One end of each of the two resonators S1 and S2 is connected via wiring h4 to the second busbar 43 of the odd-numbered IDT electrodes d1, d3, and d5 of the longitudinally coupled elastic wave filter F2.

[0074] exist Figure 2 In the example, both of the two resonators S1 and S2 are series resonators. However, it is also possible that one of the two resonators S1 and S2 is a parallel resonator connected between wiring h2 or wiring h4 and ground.

[0075] (2-4) Operation of the high-frequency module

[0076] Reference Figure 1 To illustrate the operation of high-frequency module 1.

[0077] This describes the operation when receiving signals from the first frequency band (GNSS(L1)). When antenna 103 receives a received signal containing signals from the first frequency band, the received signal is sequentially output from external terminal 110b to signal processing circuit 102 via matching circuit 5, LC filter circuit 22, first filter 242, input-side inductor L10, low-noise amplifier 25, second elastic wave filter 26, capacitor C1, and output-side inductor L2. At this time, unwanted frequency band signals other than the first frequency band in the received signal are removed by LC filter circuit 22, first filter 242, and second elastic wave filter 26, and only the signals from the first frequency band are output from external terminal 110c.

[0078] Next, the operation when transmitting a signal in the second frequency band (MHB) will be explained. When a transmission signal containing the second frequency band signal is input from the signal processing circuit 102 to the external terminal 110c, the transmission signal is transmitted from the antenna 103 to the outside via the power amplifier 3, the matching circuit 6, the LC filter circuit 27, the second filter 243, the LC filter circuit 22, and the matching circuit 5. At this time, unwanted frequency band signals other than the second frequency band in the transmission signal are removed by the LC filter circuit 27, the second filter 243, and the LC filter circuit 22, and only the second frequency band signal is transmitted from the antenna 103.

[0079] Here, we consider the case where signals in the first frequency band are received and signals in the second frequency band are transmitted simultaneously. In this case, a portion of the transmitted signal in the second frequency band bypasses the output of the second filter 243 and enters the input of the first filter 242 before being output from the output of the first filter 242. However, this portion of the transmitted signal in the second frequency band, bypassing the output of the second filter 243 and entering the input of the first filter 242, is attenuated by the first filter 242 and the input-side inductor L10, and can hardly pass through the first filter 242 and the input-side inductor L10. The first filter 242 and the input-side inductor L10 allow the received signal in the first frequency band to pass through with almost no attenuation. Therefore, after the input-side inductor L10, only the received signal in the first frequency band flows, while a portion of the transmitted signal in the second frequency band does not flow. Thus, interference between the received signal in the first frequency band and the transmitted signal in the second frequency band can be reduced.

[0080] Next, the operation when transmitting a third frequency band (UHB) signal will be explained. When the third frequency band transmission signal is input from the signal processing circuit 102 to the external terminal 110d, the transmission signal is transmitted to the outside from the antenna 103 via the power amplifier 4, the matching circuit 7, the LC filter circuit 23, and the matching circuit 5.

[0081] Next, consider the case where static electricity flows from the signal processing circuit 102 into the external terminal 110b. In this case, the capacitor C1 can reduce the flow of static electricity into the second elastic wave filter 26 and the low-noise amplifier 25. This reduces the degradation of the characteristics of both the second elastic wave filter 26 and the low-noise amplifier 25 due to static electricity. Furthermore, the second elastic wave filter 26 reduces the flow of static electricity into the low-noise amplifier 25. This further reduces the degradation of the characteristics of the low-noise amplifier 25 due to static electricity.

[0082] (2-5) Configuration relationship of the second elastic wave filter, capacitor and output-side inductor

[0083] Reference Figure 4 This explains the configuration relationship between the second elastic wave filter 26, capacitor C1, and output-side inductor L2. For example... Figure 4 As shown, the high-frequency module 1 also has a multilayer substrate 8.

[0084] The multilayer substrate 8 is a substrate used for configuring (mounting) the electronic components of the high-frequency module 1. Figure 4 In the example, only the second elastic wave filter 26, capacitor C1, and output-side inductor L2 of the aforementioned electronic components are illustrated. The multilayer substrate 8 is, for example, planar. The multilayer substrate 8 is, for example, an LTCC (Low Temperature Co-fired Ceramics) substrate. Furthermore, the multilayer substrate 8 is not limited to LTCC; it can also be, for example, a resin multilayer substrate, a printed circuit board, or an HTCC (High Temperature Co-fired Ceramics) substrate.

[0085] The multilayer substrate 8 includes, for example, multiple dielectric layers and multiple conductive layers. Multiple conductive layers are disposed between the multiple dielectric layers. That is, the multiple dielectric layers and multiple conductive layers are alternately stacked in the thickness direction M1 of the multilayer substrate 8. The multiple conductive layers are formed according to a predetermined pattern for each layer. Multiple conductive paths are disposed inside the multilayer substrate 8. The multiple conductive paths constitute a circuit connecting two conductive layers that are different layers, or constitute a circuit connecting the conductive layers to pads disposed on the main surfaces (first main surface 8a and second main surface 8b) on both sides of the multilayer substrate 8. The dielectric layers are, for example, formed of ceramic. The conductive layers, conductive paths, and pads are, for example, formed of copper or a copper alloy.

[0086] The multilayer substrate 8 has a first main surface 2a and a second main surface 2b. The first main surface 2a and the second main surface 2b are main surfaces facing each other in the thickness direction M1 of the multilayer substrate 8.

[0087] In the high-frequency module 1, a second elastic wave filter 26 is disposed on the first main surface 8a of the multilayer substrate 8. A capacitor C1 and an output-side inductor L2 are disposed inside the multilayer substrate 8. The output portion of the second elastic wave filter 26 is connected to the first terminal of the capacitor C1 via circuit h5. The second terminal of the capacitor C1 is connected to the first terminal of the output-side inductor L2 via circuit h6. Circuits h5 and h6 extend along the thickness direction M1 of the multilayer substrate 8. Circuits h5 and h6 are formed by conductive paths within the multilayer substrate 8.

[0088] Capacitor C1 overlaps with the second elastic wave filter 26 along the thickness direction M1 of the multilayer substrate 8. Here, "capacitor C1 overlaps with the second elastic wave filter 26 along the thickness direction M1 of the multilayer substrate 8" means that at least a portion of capacitor C1 (in...) Figure 4 In the example, all of them overlap with the second elastic wave filter 26 in the thickness direction M1 of the multilayer substrate 8. As a result, the circuit h5 can be shortened.

[0089] At least a portion of the output-side inductor L2 (in Figure 4 In the example, all of them) overlap with the second elastic wave filter 26 in the thickness direction M1 of the multilayer substrate 8. Additionally, at least a portion of the output-side inductor L2 (in...) Figure 4 In the example, all of them overlap with capacitor C1 in the thickness direction M1 of the multilayer substrate 8. Figure 4 In this example, the output-side inductor L2 is positioned on the side of capacitor C1 opposite to the second elastic wave filter 26. This allows circuit h6 to be shorted. In this way, since circuits h5 and h6 can be shorted, signal losses in circuits h5 and h6 can be reduced. This, in turn, reduces the degradation of the noise figure (NF) characteristics of the low-noise amplifier 25.

[0090] (2-6) Effects

[0091] The high-frequency module 1 involved in Embodiment 1 includes a first elastic wave filter 24, a low-noise amplifier 25, a second elastic wave filter 26, and a capacitor C1 (see reference). Figure 1The first elastic wave filter 24 has a first input section 241a and a first output section 241b. The low-noise amplifier 25 has an input section 25a and an output section 25b. The input section 25a is connected to the first output section 241b of the first elastic wave filter 24. The second elastic wave filter 26 has a second input section 26a and a second output section 26b. The second input section 26a is connected to the output section 25b of the low-noise amplifier 25. The capacitor C1 is connected to the second output section 26b of the second elastic wave filter 26.

[0092] According to this structure, the inflow of static electricity from the post-stage side of the second elastic wave filter 26 into the output section 25b of the low-noise amplifier 25 can be reduced by the second elastic wave filter 26 connected to it. Furthermore, the inflow of static electricity into the output section 25b of the low-noise amplifier 25 can be further reduced by the capacitor C1 connected to it. Therefore, the degradation of the characteristics of the low-noise amplifier 25 due to static electricity flowing into it from the output section 25b can be reduced. In other words, the degradation of the characteristics of the low-noise amplifier 25 caused by static electricity can be reduced.

[0093] In addition, the high-frequency module 1 involved in Embodiment 1 includes a multiplexer circuit 2 (see reference 1). Figure 1 The multiplexer circuit 2 includes a first elastic wave filter 24, a low-noise amplifier 25, and a second elastic wave filter 26. According to this structure, the degradation of the characteristics of the low-noise amplifier 25 included in the multiplexer circuit 2 due to static electricity can be reduced.

[0094] Additionally, the high-frequency module 1 according to embodiment 1 includes an output-side inductor L2 (see reference). Figure 1 The output-side inductor L2 is connected to the second output section 26b of the second elastic wave filter 26. This structure further reduces the inflow of static electricity into the output section 25b of the low-noise amplifier 25. Consequently, the degradation of the characteristics of the low-noise amplifier 25 caused by static electricity can be further reduced.

[0095] Furthermore, in the high-frequency module 1 according to Embodiment 1, the output-side inductor L2 is connected in series with the capacitor C1 (see reference). Figure 1 According to this structure, the inflow of static electricity into the output section 25b of the low-noise amplifier 25 can be effectively reduced. Therefore, the degradation of the characteristics of the low-noise amplifier 25 caused by static electricity can be effectively reduced.

[0096] Furthermore, in the high-frequency module 1 according to Embodiment 1, the second elastic wave filter 26 includes longitudinally coupled elastic wave filters F1 and F2 (refer to...). Figure 2The longitudinally coupled elastic wave filters F1 and F2 have multiple IDT electrodes d1~d5. Each of the multiple IDT electrodes d1~d5 has multiple first electrode fingers 40, multiple second electrode fingers 41, a first bus bar 42, and a second bus bar 43 (see reference). Figure 3 Multiple first electrode fingers 40 are arranged in parallel with spacing between them. Multiple second electrode fingers 41 are inserted between the multiple first electrode fingers 40. A first bus bar 42 is connected to the first end of each of the multiple first electrode fingers 40 on one side. A second bus bar 43 is connected to the second end (i.e., the side opposite to the first side) of each of the multiple second electrode fingers 41 on one side. Multiple IDT electrodes d1~d5 are arranged in a row along the direction in which the multiple first electrode fingers 40 and the multiple second electrode fingers 41 are arranged. The first bus bars 42 of the even-numbered IDT electrodes d2 and d4 of the multiple IDT electrodes d1~d5 are connected together. The second bus bars 43 of the odd-numbered IDT electrodes d1, d3, and d5 are connected together.

[0097] According to this structure, even if the second elastic wave filter 26 includes a structure of longitudinally coupled elastic wave filters F1 and F2, it is possible to reduce the degradation of the characteristics of the low-noise amplifier 25 caused by electrostatic discharge.

[0098] Furthermore, the high-frequency module 1 according to Embodiment 1 includes a multilayer substrate 8 (see reference). Figure 4 The multilayer substrate 8 has a first main surface 8a and a second main surface 8b facing each other. A second elastic wave filter 26 is disposed on the first main surface 8a of the multilayer substrate 8. A capacitor C1 is disposed inside the multilayer substrate 8. The capacitor C1 overlaps with the second elastic wave filter 26 in the thickness direction M1 of the multilayer substrate 8. According to this structure, the circuit h5 between the second elastic wave filter 26 and the capacitor C1 can be shortened. Therefore, signal loss in circuit h5 can be reduced. Consequently, the degradation of the NF (Noise Figure) characteristics of the low-noise amplifier 25 can be reduced.

[0099] Furthermore, the communication device 100 according to Embodiment 1 includes a high-frequency module 1 and a signal processing circuit 102 (see reference 1). Figure 1 The signal processing circuit 102 is connected to the high-frequency module 1 to perform signal processing on the high-frequency signal. Based on this structure, a communication device 100 that functions as the high-frequency module 1 can be provided.

[0100] (3) Variations

[0101] In Implementation 1, regarding the second and third frequency bands, it is envisioned that the high-frequency module 1 only has the transmission structure (matching circuits 6 and 7 and power amplifiers 3 and 4) for receiving and transmitting. However, regarding the second and third frequency bands, it is also envisioned that the high-frequency module 1 only has the structure for receiving instead of the structure for transmitting, or it is also envisioned that the high-frequency module 1 has structures for both transmitting and receiving.

[0102] (Implementation Method 2)

[0103] Reference Figure 5 To illustrate the high-frequency module 1 involved in implementation method 2.

[0104] (1) Structure

[0105] like Figure 5 As shown, the high-frequency module 1 in Embodiment 2 is constructed in the same way as the high-frequency module 1 in Embodiment 1, except that the arrangement of the substrate terminals 21b is further defined.

[0106] like Figure 5 As shown, in Embodiment 2, substrate terminal 21b is disposed on the second main surface 8b of multilayer substrate 8. Substrate terminal 21b is connected to the second terminal of output-side inductor L2 via circuit h7. Circuit h7 extends along the thickness direction M1 of multilayer substrate 8. Circuit h7 is composed of conductive paths within multilayer substrate 8.

[0107] The substrate terminal 21b overlaps with the second elastic wave filter 26 and the capacitor C1 in the thickness direction M1 of the multilayer substrate 8. Here, "the substrate terminal 21b overlaps with the second elastic wave filter 26 and the capacitor C1 in the thickness direction M1 of the multilayer substrate 8" means that at least a portion of the substrate terminal 21b (in...) Figure 5 In the example, all of them) are located on the thickness direction M1 of the multilayer substrate 8 and at least a portion of the second elastic wave filter 26 and the capacitor C1 (in Figure 5 In the example, both sides overlap. This allows the circuit between the second elastic wave filter 26 and capacitor C1 and the substrate terminal 21b (e.g., the entire circuit of h5, h6, and h7 combined) to be shorter. Therefore, compared to the case where the substrate terminal 21b does not overlap with the second elastic wave filter 26 and capacitor C1 in the thickness direction M1 of the multilayer substrate 8, the degradation of the NF (Noise Figure) characteristics of the low-noise amplifier 25 can be further reduced.

[0108] Furthermore, the substrate terminal 21b also overlaps with the output-side inductor L2 in the thickness direction M1 of the multilayer substrate 8. Here, "the substrate terminal 21b overlaps with the output-side inductor L2 in the thickness direction M1 of the multilayer substrate 8" means that at least a portion of the substrate terminal 21b (in...) Figure 5 In the example, all of them overlap with the output-side inductor L2 in the thickness direction M1 of the multilayer substrate 8. This allows for a shorter circuit h7. Because the circuit h7 can be shortened, signal loss in the circuit h7 can be reduced. Therefore, compared to the case of Embodiment 1 (where all of them overlap), the signal loss in the circuit h7 is reduced. Figure 4 This can further reduce the degradation of the NF (Noise Figure) characteristics of the low-noise amplifier 25.

[0109] (2) Effect

[0110] The high-frequency module 1 according to embodiment 2 includes a substrate terminal 21b (see reference). Figure 5 The substrate terminal 21b is disposed on the second main surface 8b of the multilayer substrate 8. The substrate terminal 21b overlaps with the second elastic wave filter 26 and the capacitor C1 in the thickness direction M1 of the multilayer substrate 8. According to this structure, the circuit h7 between the capacitor C1 and the substrate terminal 21b can be shortened. Therefore, the signal loss in the circuit h7 can be reduced. As a result, the degradation of the NF characteristics of the low noise amplifier 25 can be reduced.

[0111] (Implementation Method 3)

[0112] Reference Figure 6 To illustrate the high-frequency module 1 involved in implementation method 3.

[0113] (1) Structure

[0114] like Figure 6 As shown, the high-frequency module 1 in Embodiment 3 is constructed in the same way as the high-frequency module 1 in Embodiment 1, except that the configuration relationship between the input-side inductor L10 and the output-side inductor L2 is further defined.

[0115] like Figure 6 As shown, in Embodiment 3, the input-side inductor L10 is disposed on the first main surface 8a of the multilayer substrate 8. More specifically, the input-side inductor L10 is configured as a surface-mount component. The output-side inductor L2 is the same as in Embodiment 1 (…). Figure 4 Similarly, it is disposed inside the multilayer substrate 8.

[0116] The winding direction of the input-side inductor L10 is different from that of the output-side inductor L2. More specifically, in... Figure 6 In the example, the winding direction of the input-side inductor L10 is a winding around a virtual axis perpendicular to the first main surface 8a of the multilayer substrate 8, which is a counterclockwise winding direction when viewed from above the first main surface 8a. Figure 6In the example, the winding direction of the output-side inductor L2 is a winding around a virtual axis parallel to the thickness direction M1 of the multilayer substrate 8 (i.e., a virtual axis perpendicular to the first main surface 8a), which is a clockwise winding direction when viewed from above the first main surface 8a.

[0117] Furthermore, "the winding direction of the input-side inductor L10 is different from the winding direction of the output-side inductor L2" refers to the first and second cases described below. The first case is when one of the input-side inductor L10 and the output-side inductor L2 is wound longitudinally, and the other is wound laterally. Longitudinal winding means that the central axis of the inductor is parallel to the thickness direction M1 of the multilayer substrate 8, and lateral winding means that the central axis of the inductor is orthogonal to the thickness direction M1 of the multilayer substrate 8. The second case is when both the input-side inductor L10 and the output-side inductor L2 are wound in the same longitudinal or lateral direction, but their winding directions are opposite. Figure 6 The example meets the second condition mentioned above.

[0118] (2) Effect

[0119] The high-frequency module 1 involved in embodiment 3 includes an output-side inductor L2 (see reference). Figure 6 Additionally, the high-frequency module 1 includes an input-side inductor L10 (see reference). Figure 6 The input-side inductor L10 is connected between the first output section 241b of the first elastic wave filter 24 and the input section 25a of the low-noise amplifier 25. The winding direction of the input-side inductor L10 is different from that of the output-side inductor L2 (see reference). Figure 6 According to this structure, since the winding direction of the input-side inductor L10 is different from that of the output-side inductor L2, the magnetic field coupling between the input-side inductor L10 and the output-side inductor L2 is suppressed. Therefore, it is possible to prevent the output signal of the second filter 243 from bypassing into the input side of the low-noise amplifier 25, and to suppress unwanted oscillations of the low-noise amplifier 25.

[0120] (Implementation Method 4)

[0121] Reference Figure 7 To illustrate the high-frequency module 1 involved in implementation method 4.

[0122] (1) Structure

[0123] like Figure 7 As shown, the high-frequency module 1 involved in Embodiment 4 and the high-frequency module 1 involved in Embodiment 2 (refer to...) Figure 5In contrast, it is constructed in the same way except for the following aspects: when viewed from the thickness direction M1 of the multilayer substrate 8, a plurality of channel conductors B1 are arranged between the region ER1, which includes the substrate terminal 21b (first substrate terminal) for signal flow of the first frequency band, and other substrate terminals 21c, 21d.

[0124] More specifically, such as Figure 7 As shown, in embodiment 4, a plurality of substrate terminals 21b-21c are disposed on the second main surface 8b of the multilayer substrate 8. The plurality of substrate terminals 21b-21d are directly or indirectly connected to external terminals 110b-110d, excluding external terminal 110a (i.e., the antenna terminal), among the plurality of external terminals 110a-110b (see reference). Figure 1 ).exist Figure 1 In the example, substrate terminal 21b is directly connected to external terminal 110b. That is, substrate terminal 21b is connected to external terminal 110b without electronic components. Substrate terminal 21c is indirectly connected to external terminal 110c. That is, substrate terminal 21c is connected to external terminal 110c via electronic components (matching circuit 6 and power amplifier 3). Substrate terminal 21d is indirectly connected to external terminal 110d. That is, substrate terminal 21d is connected to external terminal 110d via electronic components (matching circuit 7 and power amplifier 4).

[0125] Furthermore, "the substrate terminals are directly connected to external terminals" means that the substrate terminals are connected to external terminals without passing through electronic components. Conversely, "the substrate terminals are indirectly connected to external terminals" means that the substrate terminals are connected to external terminals via electronic components.

[0126] In embodiment 4, similarly to embodiment 2, at least a portion of the substrate terminal 21b (in) Figure 7 In the example (all examples), similar to Embodiment 2, at least one of the second elastic wave filter 26 and capacitor C1 is located on the thickness direction M1 of the multilayer substrate 8. Figure 7 In the example, two sides overlap. In Embodiment 4, similarly to Embodiment 2, at least a portion of the substrate terminal 21b (in Figure 7 In the example (all of them), it also overlaps with the output-side inductor L2 in the thickness direction M1 of the multilayer substrate 8.

[0127] In Embodiment 4, the second main surface 8b of the multilayer substrate 8 has a region ER1. When viewed from the thickness direction M1 of the multilayer substrate 8, a second elastic wave filter 26 and a capacitor C1 are disposed inside the region ER1. In Embodiment 4, when viewed from the thickness direction M1 of the multilayer substrate 8, an output-side inductor L2 is also disposed inside the region ER1.

[0128] Multiple conductive paths B1 are disposed inside the multilayer substrate 8 and electrically connected to ground. The multiple conductive paths B1 are disposed between the second main surface 8b and the first main surface 8a of the multilayer substrate 8. The multiple conductive paths B1 are formed in a straight line, for example, along the thickness direction M1 of the multilayer substrate 8. Viewed from the thickness direction M1 of the multilayer substrate 8, the multiple conductive paths B1 are arranged between the substrate terminals 21c and 21d (excluding substrate terminal 21b) and the region ER1. The multiple conductive paths B1 are arranged around the region ER1. The multiple conductive paths B1 improve the isolation (insulation separation) between the substrate terminal 21b and the other substrate terminals 21c and 21d.

[0129] (2) Effect

[0130] The high-frequency module 1 involved in embodiment 4 includes a multiplexer circuit 2 (see reference). Figure 1 ) and multiple conductors B1 (refer to) Figure 7 The multiplexer circuit 2 includes a first elastic wave filter 24, a low-noise amplifier 25, a second elastic wave filter 26, and a capacitor C1. Multiple conductive paths B1 are disposed within the multilayer substrate 8 (see reference). Figure 7 And it is connected to ground. The multiplexer circuit 2 has multiple substrate terminals 21b~21d (refer to...) Figure 1 The plurality of substrate terminals 21b-21d include substrate terminal 21b (first substrate terminal). The plurality of substrate terminals 21b-21d are directly or indirectly connected to external terminals 110b-110d of the plurality of external terminals 110a-110d of the high-frequency module 1, excluding antenna terminal 110a (see reference). Figure 1 Multiple substrate terminals 21b~21d are disposed on the second main surface 8b of the multilayer substrate 8 (refer to...). Figure 7 The second main surface 8b of the multilayer substrate 8 has region ER1 (refer to...). Figure 7 When viewed from the thickness direction M1 of the multilayer substrate 8, the second elastic wave filter 26, the capacitor C1, and the substrate terminal 21b are disposed inside region ER1 (see reference). Figure 7 When viewed from the thickness direction M1 of the multilayer substrate 8, the multiple conductive paths B1 are arranged between the substrate terminals 21c and 21d (excluding substrate terminal 21b) and the region ER1 among the multiple substrate terminals 21b to 21d (see reference). Figure 7 ).

[0131] According to this structure, the isolation (insulation separation) between substrate terminal 21b and other substrate terminals 21c and 21d of the multiple substrate terminals 21b to 21d of the multiplexer circuit 2 can be improved.

[0132] (Implementation Method 5)

[0133] Reference Figure 8 To illustrate the high-frequency module 1 involved in implementation method 5.

[0134] (1) Structure

[0135] like Figure 8 As shown, the high-frequency module 1 in Embodiment 5 is constructed in the same way as the high-frequency module 1 in Embodiment 1, except for the arrangement of the structural elements that define the low-noise amplifier 25.

[0136] like Figure 8 As shown, in Embodiment 5, the low-noise amplifier 25 includes an input section 25a, an output section 25b, a first semiconductor switch Q1, a second semiconductor switch Q2, a first inductor L11, a second inductor L12, and variable capacitors C4 and C5.

[0137] The first semiconductor switch Q1 is, for example, an N-channel MOSFET. The first semiconductor switch Q1 has a first control electrode E11 (e.g., gate) and two first main electrodes E12 and E13 (drain and source). The second semiconductor switch Q2 is, for example, an N-channel MOSFET. The second semiconductor switch Q2 has a second control electrode E21 (e.g., gate) and two second main electrodes E22 and E23 (drain and source).

[0138] The first semiconductor switch Q1 and the second semiconductor switch Q2 are connected in series between the power supply VDD1 and ground. More specifically, the first main electrode E12 of one side of the first semiconductor switch Q1 is connected to the second main electrode E23 of one side of the second semiconductor switch Q2. The remaining first main electrode E13 of the first semiconductor switch Q1 is connected to ground via the first inductor L11. The first control electrode E11 of the first semiconductor switch Q1 is connected to the input section 25a. The second main electrode E23 of one side of the second semiconductor switch Q2 is connected to the first main electrode E12 of one side of the first semiconductor switch Q1. The remaining second main electrode E22 of the second semiconductor switch Q2 is connected to the power supply VDD1 via the second inductor L12. The second control electrode E21 of the second semiconductor switch Q2 is biased by an input voltage Vbias, and the second semiconductor switch Q2 is always in the ON state.

[0139] Diodes D1 and D2 are, for example, diodes used for reverse voltage protection of input section 25a. Diode D1 is connected in reverse between input section 25a and power supply VDD1. That is, the cathode of diode D1 is connected to power supply VDD1 (i.e., the high voltage side), and the anode of diode D1 is connected to input section 25a (i.e., the low voltage side). Diode D2 is connected in reverse between input section 25a and ground. That is, the cathode of diode D2 is connected to input section 25a (high voltage side), and the anode of diode D2 is connected to ground (i.e., the low voltage side).

[0140] Diodes D3 and D4 are, for example, diodes used for reverse voltage protection of the first control electrode E11 of the first semiconductor switch Q1. Diodes D3 and D4 are connected in parallel and in reverse to each other between the first control electrode E11 of the first semiconductor switch Q1 and the remaining first main electrode E13.

[0141] Diodes D5 and D6 are, for example, diodes used to handle ESD (Electro Static Discharge) from static electricity flowing into the low-noise amplifier 25 from the output section 25b. Diodes D5 and D6 are connected in parallel and in opposite directions between the output section 25b and ground.

[0142] The variable capacitor C4 is connected in parallel with the second inductor L12.

[0143] The variable capacitor C5 is, for example, a capacitor used to handle ESD caused by static electricity flowing into the low-noise amplifier 25 from the output section 25b. The variable capacitor C5 is connected in series in the signal path between the output section 25b and the remaining second main electrode E22 of the second semiconductor switch Q2. More specifically, the variable capacitor C5 has a first terminal and a second terminal. The first terminal of the variable capacitor C5 is connected to the remaining second main electrode E22 (the second main electrode on the side of the second inductor L12) of the two second main electrodes E22 and E23 of the second semiconductor switch Q2. The second terminal of the variable capacitor C5 is connected to the output section 25b.

[0144] (2) The configuration relationship of the structural elements of the low-noise amplifier

[0145] Reference Figure 9 This illustrates the configuration of the structural elements of the low-noise amplifier 25. For example... Figure 9 As shown, the first elastic wave filter 24 and the second elastic wave filter 26 are disposed on the first main surface 8a of the multilayer substrate 8.

[0146] The electronic components in the low-noise amplifier 25, excluding the first inductor L11 and the second inductor (first semiconductor switch Q1, second semiconductor switch Q2, diodes D1-D6, and variable capacitors C4 and C5), are included in chip 251. Chip 251 is a semiconductor chip (also known as an IC (Integrated Circuit) chip). Chip 251 is disposed on the second main surface 8b of the multilayer substrate 8. The first inductor L11 and the second inductor L12 are disposed inside the multilayer substrate 8. One end of the first inductor L11 is connected to the external electrode of chip 251 via circuit h9. One end of the second inductor L12 is connected to another external electrode of chip 251 via circuit h10. Circuits h9 and h10 are formed by conductive paths within the multilayer substrate 8.

[0147] When viewed from the thickness direction M1 of the multilayer substrate 8, at least one of the first inductor L11 and the second inductor L12 (in) Figure 9 In the example of two parties, at least a part (in) Figure 9 In the example, both sides) overlap with chip 251. Therefore, at least one of circuits h9 and h10 (in...) can be made to overlap with chip 251. Figure 9 In the example, both sides are short. Figure 9 In the example, circuits h9 and h10 extend along the thickness direction M1 of the multilayer substrate 8, thus becoming the shortest length. Therefore, it is possible to reduce the length of at least one of circuits h9 and h10 (in...). Figure 9 In the example, there are parasitic components (such as parasitic inductors and parasitic capacitors) generated in the two parties. As a result, the NF characteristics of the low-noise amplifier 25 can be improved.

[0148] The first end of the second elastic wave filter 26 is connected to the external electrode of the chip 251 via circuit h11. Circuit h11 is formed by a conductive path within the multilayer substrate 8. When viewed from above in the thickness direction M1 of the multilayer substrate 8, at least a portion of the second elastic wave filter 26 overlaps with the chip 251. This allows circuit h11 to be short. Figure 9 In the example, circuit h11 extends along the thickness direction M1 of the multilayer substrate 8, thus becoming the shortest length. This reduces parasitic components (such as parasitic inductors and capacitors) generated in circuit h11. Consequently, the NF characteristics of the low-noise amplifier 25 can be improved.

[0149] (3) Effect

[0150] In the high-frequency module 1 according to embodiment 5, the low-noise amplifier 25 (more specifically, chip 251) is disposed on the second main surface 8b of the multilayer substrate 8 (see reference). Figure 9 According to this structure, in the configuration where the low-noise amplifier 25 is disposed on the second main surface 8b of the multilayer substrate 8, the degradation of the characteristics of the low-noise amplifier 25 caused by static electricity can be reduced.

[0151] Furthermore, the high-frequency module 1 according to embodiment 5 includes a multilayer substrate 8 (see reference). Figure 9 The multilayer substrate 8 has a first main surface 8a and a second main surface 8b facing each other. The low-noise amplifier 25 has a first semiconductor switch Q1, a second semiconductor switch Q2, a first inductor L11, and a second inductor L12 (see reference). Figure 8The first semiconductor switch Q1 has a first control electrode E11 and two first main electrodes E12 and E13. The second semiconductor switch Q2 has a second control electrode E21 and two second main electrodes E22 and E23. One of the second main electrodes E23 of the second semiconductor switch Q2 is connected to one of the first main electrodes E12 of the first semiconductor switch Q1. The first inductor L11 is connected between the remaining first main electrodes E3 of the first semiconductor switch Q1 and ground. The second inductor L12 is connected between the remaining second main electrodes E22 of the second semiconductor switch Q2 and the power supply VDD1. The input section 25a of the low-noise amplifier 25 is connected to the first control electrode E11 of the first semiconductor switch Q1. The output section 25b of the low-noise amplifier 25 is connected to the remaining second main electrodes E22 of the second semiconductor switch Q2. The electronic components in the low-noise amplifier 25 other than the first inductor L11 and the second inductor L12 (in...) Figure 9 In the example, the first semiconductor switch Q1, the second semiconductor switch Q2, capacitors C2 and C3, and diodes D1 to D6 are included in chip 251 (see reference). Figure 9 The chip 251 is disposed on one of the main surfaces 8a and 8b of the multilayer substrate 8. Figure 9 In the example, this is the second main surface 8b). The first inductor L11 and the second inductor L12 are disposed inside the multilayer substrate 8 (see reference). Figure 9 At least one of the first inductor L11 and the second inductor L12 overlaps with the chip 251 in the thickness direction M1 of the multilayer substrate 8 (see reference). Figure 9 ).

[0152] According to this structure, the circuit h9 between the first semiconductor switch Q1 and the first inductor L11 and the circuit h10 between the second semiconductor switch Q2 and the second inductor L12 can be shortened. Therefore, in the structure in which the first inductor L11 and the second inductor L12 are disposed inside the multilayer substrate 8, parasitic components (e.g., parasitic inductors and parasitic capacitors) generated in circuit h9 and parasitic components (e.g., parasitic inductors and parasitic capacitors) generated in circuit h10 can be reduced.

[0153] Furthermore, in the high-frequency module 1 according to embodiment 5, the low-noise amplifier 25 includes a variable capacitor C5 (see reference). Figure 8 A variable capacitor C5 is connected in series in the signal path between the remaining second main electrode E22 of the second semiconductor switch Q2 and the output section 25b of the low-noise amplifier 25. According to this structure, the variable capacitor C5 can reduce the static electricity flowing into the output section 25b of the low-noise amplifier 25, thus reducing the degradation of the characteristics of the first semiconductor switch Q1 and the second semiconductor switch Q2. Therefore, the degradation of the characteristics of the low-noise amplifier 25 caused by static electricity can be reduced.

[0154] (4) Variations

[0155] In Embodiment 5, the chip 251 is exemplified as being disposed on the second main surface 8b of the multilayer substrate 8, but the chip 251 may also be disposed on the first main surface 8a of the multilayer substrate 8. In this case, it is also configured such that, when viewed from above in the thickness direction M1 of the multilayer substrate 8, at least a portion of at least one of the first inductor L11 and the second inductor L12 overlaps with the chip 251. Therefore, at least one of the circuits h9 and h10 can be shortened in the same way as in Embodiment 5, thereby improving the NF characteristics of the low-noise amplifier 25.

[0156] (Implementation Method 6)

[0157] Reference Figure 9 The high-frequency module 1 involved in Embodiment 6 will be described below. In the following description, the same markings are sometimes used for structures that are the same as those in Embodiment 5, and the description is omitted.

[0158] (1) Structure

[0159] In Embodiment 6, the relationship between the winding direction of the first inductor L11 and the winding direction of the second inductor L12 in the high-frequency module 1 is defined.

[0160] In embodiment 6, the winding direction of the first inductor L11 is different from the winding direction of the second inductor L12. More specifically, in Figure 9 In the example, the winding direction of the first inductor L11 is a winding around a virtual axis parallel to the thickness direction M1 of the multilayer substrate 8, which is, for example, a counterclockwise winding direction when the first inductor L11 is viewed from the first main surface 8a side of the multilayer substrate 8. Figure 9 In the example, the winding direction of the second inductor L12 is a winding around a virtual axis parallel to the thickness direction M1 of the multilayer substrate 8, which is, for example, a clockwise winding direction when the first inductor L11 is viewed from the first main surface 8a side of the multilayer substrate 8.

[0161] Furthermore, "the winding direction of the first inductor L11 is different from the winding direction of the second inductor L12" refers to the following first and second cases. The first case is when one of the first inductor L11 and the second inductor L12 is wound longitudinally, and the other is wound laterally. The definitions of longitudinal winding and lateral winding are the same as in Embodiment 3. The second case is when both the first inductor L11 and the second inductor L12 are wound in the same longitudinal or lateral direction, but their winding directions are opposite. Figure 9 The example meets the second condition mentioned above.

[0162] (2) Effect

[0163] In the high-frequency module 1 according to embodiment 6, the winding direction of the first inductor L11 is different from that of the second inductor L12 (see reference). Figure 9 According to this structure, since the winding directions of the first inductor L11 and the second inductor L12 are different, the degradation of the Q value caused by magnetic field coupling between the first inductor L11 and the second inductor L12 can be suppressed. Therefore, the degradation of the NF characteristics of the low-noise amplifier 25 can be reduced.

[0164] (Implementation Method 7)

[0165] Reference Figure 10 To illustrate the high-frequency module 1 involved in implementation method 7.

[0166] (1) Structure

[0167] like Figure 10 As shown, the high-frequency module 1 in Embodiment 7 is constructed in the same way as the high-frequency module 1 in Embodiment 6, except that the second elastic wave filter 26 is configured to be divided into a first chip 261 and a second chip 262.

[0168] The second elastic wave filter 26 of Embodiment 7 (hereinafter referred to simply as "second elastic wave filter 26") and the second elastic wave filter 26 of Embodiment 6 (i.e., Figure 2 Compared to the second elastic wave filter 26 shown, it is constructed in the same way except that the second elastic wave filter 26 is configured to be divided into a first chip 261 and a second chip 262 that are different from each other. The second elastic wave filter 26 has more than one (in...) Figure 2 In the example, there are two) electronic components other than F1 and F2 of the longitudinally coupled elastic wave filter (i.e., more than one). Figure 2 In the example, there are two resonators S1 and S2), a second input section 26a, and a second output section 26b, all included in the first chip 261. One or more of the second elastic wave filters 26 (in...) Figure 2 In the example, there are two longitudinally coupled elastic wave filters F1 and F2, which are included in the second chip 262.

[0169] When viewed from the thickness direction M1 of the multilayer substrate 8, at least a portion of the first chip 261 overlaps with the low-noise amplifier 25. This shortens the circuit h11 between the output of the low-noise amplifier 25 and the input of the first chip 261. Therefore, in Embodiment 7, similar to Embodiment 6, parasitic components (e.g., parasitic inductors and capacitors) in the circuit h11 can be reduced. As a result, the noise level (NF) characteristics of the low-noise amplifier 25 can be improved.

[0170] (2) Effect

[0171] In the high-frequency module 1 according to embodiment 7, the second elastic wave filter 26 includes longitudinally coupled elastic wave filters F1 and F2 (see reference). Figure 2 The second elastic wave filter 26 also includes resonators S1 and S2 (see reference). Figure 2 The resonators S1 and S2 are included in the first chip 261 (see reference). Figure 10 The longitudinally coupled elastic wave filters F1 and F2 are included in a second chip 262 (see reference 261) in addition to the first chip 261. Figure 10 According to this structure, in the configuration where the second elastic wave filter 26 is divided into a first chip 261 and a second chip 262, similarly to embodiment 6, the degradation of the characteristics of the low-noise amplifier 25 caused by electrostatic discharge can be reduced.

[0172] (Implementation Method 8)

[0173] Reference Figure 11 The high-frequency module 1 according to Embodiment 8 will be described below. The structure of the high-frequency module 1 according to Embodiment 8 is the same as that of the high-frequency module 1 according to Embodiment 1. Therefore, when referring to the structure of the high-frequency module 1 according to Embodiment 8, reference will be made to... Figure 1 .

[0174] (1) Structure

[0175] like Figure 11 As shown, the high-frequency module 1 in Embodiment 8 is constructed in the same way as the high-frequency module 1 in Embodiment 1, except for the following differences: it is similar to the first elastic wave filter 24 (see reference 1). Figure 1 Multiple (in) Figure 1 In the example, there are two) First output sections 241b and 241c (refer to...) Figure 1 The configuration relationship of the connected inductors (input-side inductor L10, inductor L3, L4) is limited.

[0176] like Figure 11 As shown, in embodiment 8, the low-noise amplifier 25 is disposed on the second main surface 8b of the multilayer substrate 8.

[0177] As described in Embodiment 1, an input-side inductor L10 is connected to a first output 241b of the first elastic wave filter 24 (see Figure 1). Figure 1 Inductors L3 and L4 are connected to the other first output sections 241c of the first elastic wave filter 24. Inductors L3 and L4 are other inductors besides the input-side inductor L10.

[0178] like Figure 11As shown, input-side inductor L10 and inductors L3 and L4 are disposed on one of the main surfaces 8a and 8b of the multilayer substrate 8 (in... Figure 11 In the example, this is the second main surface 8b). The low-noise amplifier 25 is positioned between the input-side inductor L10 and inductors L3 and L4. In other words, the input-side inductor L10 and inductors L3 and L4 are positioned on both sides of the low-noise amplifier 25. This improves the first signal path SK1 connected to a first output section 241b (refer to...). Figure 1 ) and the second signal path SK2 connected to another first output unit 241c (refer to Figure 1 The isolation (insulation separation) characteristics between them. Furthermore, the first signal path SK1 is the signal path for the first frequency band (GNSS(L1)). The second signal path SK2 is the signal path for the second frequency band (MHB) to flow. As a result, for example, it is possible to reduce the coupling between the second frequency band transmitted signal flowing in the second signal path SK2 and the input-side inductor L10, thereby reducing the degradation of the characteristics of the low-noise amplifier 25.

[0179] (2) Effect

[0180] The high-frequency module 1 according to embodiment 8 includes a multilayer substrate 8, an input-side inductor L10, and additional inductors L3 and L4 besides the input-side inductor L10 (see reference). Figure 1 The multilayer substrate 8 has a first main surface 8a and a second main surface 8b facing each other. The first elastic wave filter 24 has a plurality of first output sections 241b and 241c, including a first output section 241b. An input-side inductor L10 is connected between one of the first output sections 241b and 241c and the input section 25a of the low-noise amplifier 25. Additional inductors L3 and L4 are connected to the other first output section 241c besides one of the first output sections 241b and 241c. The input-side inductor L10 and the additional inductors L3 and L4 are disposed on one of the main surfaces of the first main surface 8a and the second main surface 8b of the multilayer substrate 8 (in...). Figure 11 In the example, it is the second main face 8b (see reference). Figure 11 The low-noise amplifier 25 is disposed on one of the main surfaces (second main surface 8b), between the input-side inductor L10 and the other inductors L3 and L4 (see reference). Figure 11 ).

[0181] According to this structure, the first signal path SK1 connected to a first output section 241b (refer to) can be improved. Figure 1 ) and the second signal path SK2 connected to another first output unit 241c (refer to Figure 1The isolation (insulation separation) characteristics between )

[0182] (3) Variations

[0183] A variation of implementation method 8 is described.

[0184] In embodiment 8, the low-noise amplifier 25, the input-side inductor L10, and the inductors L3 and L4 are exemplified as being disposed on the second main surface 8b of the multilayer substrate 8. However, the low-noise amplifier 25, the input-side inductor L10, and the inductors L3 and L4 can also be disposed on the first main surface 8a of the multilayer substrate 8. This variation achieves the same effect as embodiment 8.

[0185] (Implementation Method 9)

[0186] Reference Figure 12 and Figure 13 To illustrate the high-frequency module 1 involved in implementation method 9.

[0187] (1) Structure

[0188] like Figure 12 and Figure 13 As shown, the high-frequency module 1 according to Embodiment 9 is constructed in the same way as the high-frequency module 1 according to Embodiment 1, except that the input-side inductor L10 and the low-noise amplifier 25 are disposed on the bottom surface 81t of the receiving recess 81 of the second main surface 8b of the multilayer substrate 8.

[0189] like Figure 12 and Figure 13 As shown, in embodiment 9, the second main surface 8b of the multilayer substrate 8 has a receiving recess 81. The receiving recess 81 is, for example, rectangular in plan view. Figure 12 and Figure 13 In the example, the receiving recess 81 has a bottom surface 81t and multiple (in) Figure 12 In this example, there are three inner surfaces 81a~81c, and a side opening 81d. The side opening 81d is located on a portion of the outer peripheral surface 8c of the multilayer substrate 8. Figure 13 In the example, the depth T1 of the receiving recess 81 is less than the height T2 of the low-noise amplifier 25 and the height T3 of the input-side inductor L10. However, the depth T1 of the receiving recess 81 may also be deeper than the height T2 of the low-noise amplifier 25 and the height T3 of the input-side inductor L10.

[0190] Furthermore, the height T2 of the low-noise amplifier 25 is the length from the bottom surface 81t to the top surface 25s of the low-noise amplifier 25 (i.e., the side opposite to the bottom surface 81t). The height T3 of the input-side inductor L10 is the length from the bottom surface 81t to the top surface Ls1 of the input-side inductor L10 (i.e., the side opposite to the bottom surface 81t).

[0191] In embodiment 9, the low-noise amplifier 25 and the input-side inductor L10 are disposed on the bottom surface 81t of the receiving recess 81 in the second main surface 8b of the multilayer substrate 8. Figure 13 In this example, the protrusion 25u of the low-noise amplifier 25 protrudes from the second main surface 8b of the multilayer substrate 8. The protrusion Lu1 of the input-side inductor L10 protrudes from the second main surface 8b of the multilayer substrate 8. By passing the bottom surface 81t of the receiving recess 81 disposed on the second main surface 8b of the multilayer substrate 8, the protrusions 25u and Lu1 of the low-noise amplifier 25 and the input-side inductor L10 can be shortened. This helps to reduce the height of the high-frequency module 1.

[0192] (2) Effect

[0193] The high-frequency module 1 according to embodiment 9 includes a multilayer substrate 8 (see reference). Figure 12 ) and input-side inductor L10 (refer to Figure 1 The multilayer substrate 8 has a first main surface 8a and a second main surface 8b facing each other. An input-side inductor L10 is connected between the first output portion 241b of the first elastic wave filter 24 and the input portion 25a of the low-noise amplifier 25. One of the first main surface 8a and the second main surface 8b of the multilayer substrate 8 (in...) Figure 12 and Figure 13 In the example, the second main surface 8b) has a receiving recess 81. The low-noise amplifier 25 and the input-side inductor L10 are disposed on the bottom surface 81t of the receiving recess 81 (see reference). Figure 12 and Figure 13 According to this structure, the height of the high-frequency module 1 can be reduced.

[0194] (3) Variations

[0195] A variation of implementation method 9 is described.

[0196] (3-1) Variation Example 1

[0197] In embodiment 9, the example is shown where the depth T1 of the receiving recess 81 is less than the height T2 of the low-noise amplifier 25 and the height T3 of the input-side inductor L10. However, the depth T1 of the receiving recess 81 may also be greater than the height T2 of the low-noise amplifier 25 and the height T3 of the input-side inductor L10.

[0198] (3-2) Variation Example 2

[0199] In embodiment 9, it is envisioned that the receiving recess 81 has a side opening 81d. However, the receiving recess 81 may also have an inner side surface instead of a side opening 81d. In this case, the receiving recess 81 becomes a receiving recess that is surrounded on all four sides by the inner side surface. This variation achieves the same effect as embodiment 9.

[0200] Implementation methods 1 to 9 and their variations can also be combined.

[0201] Explanation of reference numerals in the attached figures

[0202] 1: High-frequency module; 2: Multiplexer circuit; 2a: First main surface; 2b: Second main surface; 2d: Substrate terminal; 3, 4: Power amplifier; 5~7: Matching circuit; 8: Multilayer substrate; 8a: First main surface; 8b: Second main surface; 8c: Outer peripheral surface; 21a: Common terminal; 21b~21d: Substrate terminal; 22, 23, 27: LC filter circuit; 24: First elastic wave filter; 25: Low noise amplifier; 25a: Input section; 25b: Output section; 25u: Protrusion; 26 : Second elastic wave filter; 26a: Second input section; 26b: Second output section; 27a: Input section; 27b: Output section; 40: First electrode finger; 41: Second electrode finger; 42: First busbar; 43: Second busbar; 81: Receiving recess; 81a~81c: Inner surface; 81d: Side opening; 81t: Bottom surface; 100: Communication device; 102: Signal processing circuit; 103: Antenna; 110a~110c: External terminals; 121: RF signal processing circuit; 1 22: Baseband signal processing circuit; 241a: First input section; 241b, 241c: First output section; 242: First filter; 243: Second filter; 251: Chip; 261: First chip; 262: Second chip; B1: Path conductor; C1~C3: Capacitors; C4, C5: Variable capacitors; d1~d5: IDT electrodes; D1~D6: Diodes; ER1: Zone; F1, F2: Longitudinal coupled elastic wave filter; h1~h4: Wiring; h5~h7 h9~h11: Circuit; L10: Input-side inductor; L2: Output-side inductor; L3, L4: Inductors (other inductors); L11: First inductor; L12: Second inductor; Ls1: Top surface; Lu1: Protrusion; M1: Thickness direction; Q1: First semiconductor switch; Q2: Second semiconductor switch; S1, S2: Resonator; SK0: Signal path; SK1: First signal path; SK2: Second signal path; Vbias: Bias voltage; VDD1: Power supply.

Claims

1. A high-frequency module, comprising: A first elastic wave filter has a first input section and a first output section; A low-noise amplifier having an input section and an output section, the input section being connected to the first output section of the first elastic wave filter; A second elastic wave filter has a second input section and a second output section, the second input section being connected to the output section of the low-noise amplifier; and A capacitor is connected to the second output section of the second elastic wave filter.

2. The high-frequency module according to claim 1, wherein, It has a multiplexer circuit, which includes a first elastic wave filter, a low-noise amplifier, and a second elastic wave filter.

3. The high-frequency module according to claim 1 or 2, wherein, It also includes an output-side inductor, which is connected to the second output section of the second elastic wave filter.

4. The high-frequency module according to claim 3, wherein, The output-side inductor is connected in series with the capacitor.

5. The high-frequency module according to claim 3 or 4, wherein, It also includes an input-side inductor connected between the first output of the first elastic wave filter and the input of the low-noise amplifier. The winding direction of the input-side inductor is different from that of the output-side inductor.

6. The high-frequency module according to any one of claims 1 to 5, wherein, The second elastic wave filter is a longitudinally coupled elastic wave filter. One or more of the longitudinally coupled elastic wave filters described above have multiple interdigital transducer electrodes, i.e., IDT electrodes. Each of the plurality of IDT electrodes has: Multiple first electrode fingers arranged in parallel with intervals between them; A plurality of second electrode fingers inserted between the plurality of first electrode fingers; The first busbar is connected to the first end of each of the plurality of first electrodes on the first side of their respective ends; as well as The second busbar is connected to the second end of each of the plurality of second electrode fingers on the second side. The plurality of IDT electrodes are configured to be arranged in a row along the direction in which the plurality of first electrode fingers and the plurality of second electrode fingers are arranged. The first busbars of the even-numbered IDT electrodes in the plurality of IDT electrodes are interconnected. The second busbars of the odd-numbered IDT electrodes among the plurality of IDT electrodes are interconnected.

7. The high-frequency module according to claim 6, wherein, The second elastic wave filter also includes a resonator. One or more of the aforementioned resonators are included in the first chip. The more than one longitudinally coupled elastic wave filter is included in a second chip in addition to the first chip.

8. The high-frequency module according to any one of claims 1 to 7, wherein, It also includes a multilayer substrate, wherein the multilayer substrate has a first main surface and a second main surface facing each other. The second elastic wave filter is disposed on the first main surface of the multilayer substrate. The capacitor is disposed inside the multilayer substrate. The capacitor overlaps with the second elastic wave filter in the thickness direction of the multilayer substrate.

9. The high-frequency module according to claim 8, wherein, It also includes a substrate terminal disposed on the second main surface of the multilayer substrate. The substrate terminals overlap with the second elastic wave filter and the capacitor in the thickness direction of the multilayer substrate.

10. The high-frequency module according to claim 9, wherein, It also has: A multiplexer circuit includes a first elastic wave filter, a low-noise amplifier, a second elastic wave filter, and a capacitor; and Multiple conductive paths are disposed within the multilayer substrate and connected to ground. The multiplexer circuit includes multiple substrate terminals, including a first substrate terminal serving as a substrate terminal. These multiple substrate terminals are directly or indirectly connected to external terminals (excluding antenna terminals) among the multiple external terminals of the high-frequency module. The plurality of substrate terminals are disposed on the second main surface of the multilayer substrate. The second main surface of the multilayer substrate has a region. When viewed from the thickness direction of the multilayer substrate, the second elastic wave filter, the capacitor, and the first substrate terminal are disposed inside the region. When viewed from the thickness direction of the multilayer substrate, the plurality of via conductors are arranged between the substrate terminals (excluding the first substrate terminal) and the region.

11. The high-frequency module according to any one of claims 8 to 10, wherein, The low-noise amplifier is disposed on the second main surface of the multilayer substrate.

12. The high-frequency module according to any one of claims 1 to 10, wherein, It also has: A multilayer substrate having a first main surface and a second main surface facing each other; Input-side inductor; and Other inductors besides the input-side inductor, The first elastic wave filter has multiple first output sections, including the first output section. The input-side inductor is connected between one of the plurality of first output sections and the input section of the low-noise amplifier. The additional inductor is connected to another first output unit other than the one of the plurality of first output units. The input-side inductor and the other inductor are disposed on one of the first main surface and the second main surface of the multilayer substrate. The low-noise amplifier is positioned on one of the main surfaces, between the input-side inductor and the other inductor.

13. The high-frequency module according to any one of claims 1 to 11, wherein, It also has: A multilayer substrate having a first main surface and a second main surface facing each other; and An input-side inductor is connected between the first output of the first elastic wave filter and the input of the low-noise amplifier. The first main surface and the second main surface of the multilayer substrate have a receiving recess on one of their main surfaces. The low-noise amplifier and the input-side inductor are disposed on the bottom surface of the receiving recess.

14. The high-frequency module according to any one of claims 1 to 13, wherein, It also includes a multilayer substrate, wherein the multilayer substrate has a first main surface and a second main surface facing each other. The low-noise amplifier has: A first semiconductor switch having a first control electrode and two first main electrodes; The second semiconductor switch has a second control electrode and two second main electrodes, wherein one of the second main electrodes is connected to the first main electrode of one of the first semiconductor switches. A first inductor is connected between the remaining first main electrode of the first semiconductor switch and ground; as well as The second inductor is connected between the remaining second main electrode of the second semiconductor switch and the power supply. The input section of the low-noise amplifier is connected to the first control electrode of the first semiconductor switch. The output section of the low-noise amplifier is connected to the remaining second main electrode of the second semiconductor switch. The electronic components in the low-noise amplifier, excluding the first inductor and the second inductor, are included in a chip. The chip is disposed on one of the first main surface and the second main surface of the multilayer substrate. The first inductor and the second inductor are disposed inside the multilayer substrate. At least one of the first inductor and the second inductor overlaps with the chip in the thickness direction of the multilayer substrate.

15. The high-frequency module according to claim 14, wherein, The low-noise amplifier also features a variable capacitor. The variable capacitor is connected in series in the signal path between the remaining second main electrode of the second semiconductor switch and the output section of the low-noise amplifier.

16. The high-frequency module according to claim 14 or 15, wherein, The winding direction of the first inductor is different from that of the second inductor.

17. A communication device comprising: The high-frequency module according to any one of claims 1 to 16; and A signal processing circuit, which is connected to the high-frequency module, performs signal processing on the high-frequency signal.

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