A high temperature resistant quick load bonding chuck for wafer bonding equipment

Abstract

The application relates to the technical field of semiconductor manufacturing equipment, and discloses a high-temperature-resistant rapid loading type bonding chuck for a wafer bonding device, which is assembled on a lower wafer transfer platform and comprises a silicon nitride suction disc, an outer ring support, two clamp pressing mechanisms, three spacer mechanisms, a spacer fixing pressing plate, a spacer adjusting connecting rod, a hinged shaft, a mounting seat, six driving air cylinders, a sliding table air cylinder, a clamp shifting rod and a swing table air cylinder. The outer ring support is used for edge support during a high-temperature bonding process; the spacer mechanism is driven by a lever type double-cylinder to realize insertion and withdrawal actions; and the clamp pressing mechanism is cooperatively driven by the swing table air cylinder and the sliding table air cylinder to realize swing-in, swing-out and lifting and pressing actions. The application integrates the functions of vacuum fixing, gap regulation, edge pressing and high-temperature resistance, can improve wafer sliding, edge warping and thermal mismatch defects during high-temperature bonding, and improves the quality of bonding products and the universality of the equipment.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing equipment technology, and more specifically to a high-temperature resistant, fast-loading bonding chuck for wafer bonding equipment. Background Technology

[0002] Wafer bonding is a critical process in 3D integration, advanced packaging, microelectromechanical system (MEMS) device manufacturing, and heterogeneous material integration. During wafer bonding, the lower wafer typically needs to be stably fixed on the bonding chuck and maintain high flatness, positional stability, and thermal stability during alignment, pre-contact, pressing, and thermal bonding processes.

[0003] Existing bonding chucks are typically mounted on a lower wafer transfer stage, securing the wafer via vacuum adsorption. They can be designed for quick-loading, facilitating the transfer and bonding of a pair of wafers after alignment and clamping. However, existing structures have the following shortcomings: First, while the spacer mechanism and clamping mechanism can operate independently, there is still room for optimization in terms of structural integration, material selection, and adaptability to high-temperature conditions. Second, insufficient heat resistance or high-temperature rigidity of the outer ring support components may affect the load-bearing stability and repeatability during bonding. Third, inaccurate drive mechanisms of the spacer mechanism may lead to inconsistent insertion depths or incomplete withdrawal, affecting the accuracy of bonding gap control. Therefore, there is an urgent need for a bonding chuck with a compact structure, high functional integration, good high-temperature adaptability, and precise coordinated operation to meet the requirements of advanced wafer bonding processes for load-bearing stability, thermal stability, and automation efficiency. Summary of the Invention

[0004] Therefore, the purpose of this invention is to provide a high-temperature resistant, fast-loading bonding chuck for wafer bonding equipment, in order to solve the problems of insufficient edge support, low thermal stability, and limited coordination between spacers and clamping mechanisms in existing bonding chucks under high-temperature conditions.

[0005] To achieve the aforementioned objectives, the technical solution adopted is as follows: A high-temperature resistant, fast-loading bonding chuck for wafer bonding equipment, mounted on a lower wafer transfer stage, includes: The silicon nitride chuck is disc-shaped with a flat wafer adsorption surface on its upper surface and a vacuum passage inside. The vacuum passage is connected to an external negative pressure source and is used to vacuum adsorb and fix the lower wafer placed on the silicon nitride chuck. The outer ring support is disposed around the periphery of the silicon nitride chuck and arranged around the wafer edge region to provide support for the wafer edge during wafer bonding. Two sets of clamping mechanisms are arranged opposite each other in the circumferential direction. Each set of clamping mechanisms includes a clamping arm and a clamping end. The clamping end is located at one end of the clamping arm and extends toward the center of the silicon nitride chuck, and is used to clamp and limit the edge position of the wafer that is set opposite to it. Three spacer spacer mechanisms are arranged circumferentially between the two sets of clamping mechanisms. Each spacer spacer mechanism includes a baffle body, which is Z-shaped and has a wedge-shaped tip at the front end, a bent transition section in the middle, and a connecting section at the rear end. A partition fixing plate is fixedly connected to the rear connecting section of the baffle body, and is used to install and fix the baffle body; The diaphragm adjusting link is in the shape of a long rod, one end of which is fixedly connected to the diaphragm fixing plate, and the middle part of the diaphragm adjusting link and the other end away from the diaphragm fixing plate are respectively engaged with the drive assembly; The hinge shaft is located on the partition adjusting link between the two driving points. The mounting base is fixed to the outer ring support member, and the partition adjustment rod is hinged to the mounting base through the hinge shaft to form a lever fulcrum. The six driving cylinders are divided into three groups. Each group has two driving cylinders corresponding to one spacer partition mechanism. The two driving cylinders in each group act on the other end of the partition adjusting link and the middle part of the partition adjusting link, respectively. Through the coordinated extension and retraction movement of the two driving cylinders, the partition adjusting link is driven to swing with the hinge shaft as the fulcrum, thereby driving the baffle body to complete the insertion or withdrawal action. The outer ring support, spacer spacer mechanism, and clamping mechanism are arranged coaxially around the silicon nitride chuck, so that after the lower wafer is adsorbed and fixed, the spacer spacer mechanism first maintains the gap, and then the clamping mechanism performs edge limiting and clamping.

[0006] As a further improvement of the present invention, one end of the partition adjusting rod connected to the partition fixing plate is a short arm end, and the other end of the partition adjusting rod is a long arm end. In each group, the piston rod of one of the driving cylinders is hinged or abutted to the long arm end, and the piston rod of the other driving cylinder is hinged or abutted to the middle of the partition adjusting rod. Through the alternating extension and retraction of the two driving cylinders, the partition adjusting rod is made to swing with the hinge axis as the fulcrum, thereby driving the partition fixing plate and the baffle body to reciprocate along the radial direction of the silicon nitride chuck, realizing the insertion or withdrawal of the baffle body.

[0007] As a further improvement of the present invention, the hinge shaft is arranged in the horizontal direction, so that the partition adjusting link can swing in the horizontal plane; the baffle body is located above the upper surface of the silicon nitride chuck, the partition fixing plate is fixedly connected to the rear end connecting section of the baffle body, and the front wedge-shaped tip of the baffle body extends toward the center of the silicon nitride chuck.

[0008] As a further improvement to the present invention, each set of clamping mechanisms further includes: A slide cylinder has a slide that can be raised and lowered in the vertical direction; A swing cylinder is installed on the slide of the slide cylinder and can rise and fall synchronously with the slide of the slide cylinder. The swing cylinder has a rotating platform that can rotate around a vertical axis. The clamp lever is rod-shaped, with one end fixedly connected to the rotating table of the swing cylinder and the other end connected to the transmission part of the clamping arm, used to convert the rotational motion of the swing cylinder into the horizontal swinging motion of the clamping arm. The stage cylinder drives the clamping arm to swing in to above the wafer edge or out to a position other than the working position in the horizontal plane via the clamp lever. The slide cylinder drives the clamping arm and clamping end to descend as a whole to clamp the wafer edge or rise to release the wafer.

[0009] As a further improvement of the present invention, the slide cylinder includes a cylinder body, a slide and a guide mechanism, and the base of the swing cylinder is fixed on the slide; the swing cylinder includes a base, a rotating platform and a rotation drive mechanism, the rotating platform is rotatably mounted on the base about a vertical axis, and one end of the clamp lever is fixedly connected to the rotating platform through a connector.

[0010] As a further improvement of the present invention, the operating sequence of each clamping mechanism is as follows: the swing cylinder first drives the clamp lever, causing the clamping arm and clamping end to swing into position above the wafer edge; then the slide cylinder drives the clamping arm and clamping end to move downward, so that the clamping end presses against the upper surface of the wafer edge to achieve stable clamping of the wafer edge; after completing the bonding preparation, the slide cylinder first drives the clamping arm and clamping end to rise, and then the swing cylinder rotates in the opposite direction, driving the clamping arm to swing out of the working position through the clamp lever.

[0011] As a further improvement of the present invention, the outer ring support is a continuous ring structure or a segmented ring splicing structure, the inner diameter of the outer ring support is larger than the outer diameter of the silicon nitride chuck, an annular gap is formed between the outer ring support and the silicon nitride chuck, and the baffle body of the spacer spacer mechanism extends through or across the annular gap to below or to the side of the wafer edge.

[0012] As a further improvement of the present invention, the upper surface of the silicon nitride chuck is provided with uniformly distributed vacuum adsorption holes or microgrooves, and the vacuum adsorption holes or microgrooves are connected to the vacuum passage.

[0013] As a further improvement of the present invention, it also includes an air pipe interface and a vacuum interface. The air pipe interface is used to connect an external air source to the drive cylinder, the slide cylinder and the swing cylinder. The vacuum interface is connected to the vacuum passage inside the silicon nitride chuck and is used to connect an external negative pressure source.

[0014] As a further improvement of the present invention, the outer ring support is made of high-temperature alloy 718, and the baffle body in the spacer spacer mechanism is made of titanium alloy TC4.

[0015] Compared with the prior art, the present invention has the following beneficial effects: 1. Highly integrated and compact structure with high space utilization. This invention integrates four core functions—vacuum adsorption fixation, high-temperature support at wafer edges, precise control of bonding gaps, and wafer edge limiting and clamping—into an integrated chuck structure. Each functional mechanism is arranged coaxially around the silicon nitride chuck, resulting in a well-organized and rational layout that significantly reduces the space occupied by the equipment, lowers the difficulty of assembly and subsequent maintenance, and adapts to the needs of automated, rapid loading and transfer mass production processes.

[0016] 2. Excellent high-temperature stability, suitable for high-temperature bonding conditions. The core load-bearing and support components of this invention are made of high-temperature resistant special materials. The silicon nitride chuck is heat-resistant, wear-resistant, and has good flatness retention, which can stably adsorb wafers in high-temperature environments. The outer ring support is made of high-temperature alloy 718, which has slow stiffness decay at high temperatures and strong resistance to thermal deformation. It can stably support the wafer edge throughout the process, effectively suppressing wafer warping and displacement at high temperatures, and ensuring the overall flatness and positional accuracy of the wafer during bonding.

[0017] 3. Precise and controllable spacer drive with high gap adjustment accuracy. This invention uses a dual-cylinder lever drive structure to drive the Z-shaped titanium alloy spacer baffle. A lever transmission structure is formed through a hinge shaft. The dual cylinders work together to achieve precise insertion and withdrawal of the spacer. The operation is smooth, the response is fast, and the positioning consistency is high. It can effectively control the initial bonding gap between the upper and lower wafers, eliminate problems such as uneven gap and spacer residue interference, and reduce defects such as bonding bubbles, cold solder joints, and poor bonding from the source.

[0018] 4. The clamping mechanism has a clear timing sequence and no motion interference. The clamping mechanism adopts a combination drive mode of swing stage cylinder + slide stage cylinder, strictly following the standardized action sequence of "swing in - descending to clamp - rising to release - swing out to reset". The horizontal swinging and vertical lifting actions are separated and coordinated smoothly, which can completely avoid motion interference with the spacer mechanism, realize stable and uniform limiting clamping of the wafer edge, and significantly improve bonding repeatability and process stability.

[0019] 5. High material adaptability and long service life. The baffles are made of titanium alloy TC4, which is lightweight, high-strength, high-temperature resistant, and resistant to reciprocating friction and wear. It does not show significant deformation during long-term high-frequency operation. The high-temperature alloy support is resistant to thermal fatigue and oxidation, and can withstand high-temperature bonding cycle conditions for a long time. The equipment stability and service life are greatly improved, and the equipment operation and maintenance costs are reduced.

[0020] 6. Wide process adaptability and strong mass production practicality. This invention features a quick-loading modular structure, which can be adapted to mainstream 6-inch and 8-inch wafer specifications. The equipment has a unified mechanical interface, strong compatibility, and can be matched with the automated transfer, alignment, and bonding processes of various wafer bonding equipment, effectively improving wafer bonding production efficiency and yield, and has extremely high industrial application value. Attached Figure Description

[0021] The accompanying drawings, which form part of this application, are used to provide a further understanding of the invention. The illustrative embodiments of the invention and their descriptions are used to explain the invention and do not constitute an undue limitation of the invention. In the drawings: Figure 1 This is a top view of the overall structure of the bonding chuck described in this invention; Figure 2 This is a partially enlarged view of the spacer spacer mechanism described in this invention; Figure 3 This is a schematic diagram of the drive structure of the clamping mechanism described in this invention.

[0022] In the diagram: 1. Silicon nitride suction cup, 2. Outer ring support, 3. Clamp clamping mechanism, 4. Spacer spacer mechanism, 5. Spacer fixing plate, 6. Spacer adjusting linkage, 61. Hinge shaft, 62. Mounting base, 7. Drive cylinder, 8. Slide cylinder, 9. Clamp lever, 10. Swinging table cylinder. Detailed Implementation

[0023] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. The present invention will now be described in detail with reference to the accompanying drawings and embodiments.

[0024] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present application, and not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative effort should fall within the scope of protection of the present application.

[0025] like Figure 1-3 As shown, this embodiment provides a high-temperature resistant, fast-loading bonding chuck for wafer bonding equipment. The overall structure is a coaxial, annular, symmetrical layout. The core supporting component is a disc-shaped silicon nitride chuck 1, which serves as the direct wafer support structure. The upper surface of the silicon nitride chuck 1 is polished to form a high-precision, flat adsorption surface. Vacuum adsorption microgrooves are uniformly opened on the surface, and the microgrooves are connected to the internal vacuum passage. A uniform vacuum adsorption of the wafer is achieved through an external negative pressure source, ensuring that the wafer is fixed flat and free from local deformation.

[0026] An outer ring support 2 is coaxially arranged around the silicon nitride chuck 1. In this embodiment, the outer ring support 2 adopts a segmented annular splicing structure for easy disassembly and maintenance. It is made of high-temperature alloy 718, which can withstand high-temperature bonding conditions above 400℃, providing rigid support for the wafer edge throughout the process and offsetting wafer warping deformation caused by high-temperature thermal stress. The inner diameter of the outer ring support 2 is larger than the outer diameter of the silicon nitride chuck 1, forming an annular gap between them, providing clearance for the telescopic movement of the spacer mechanism.

[0027] Two sets of clamping mechanisms 3 are arranged 180° apart circumferentially to form a symmetrical clamping structure, ensuring uniform force on the wafer edges. Each clamping mechanism 3 consists of a slide cylinder 8, a swing cylinder 10, a clamp lever 9, a clamping arm, and a clamping end. The slide cylinder 8 is fixed to the mounting base of the outer ring support 2, enabling precise vertical lifting and lowering; the swing cylinder 10 is fixed to the slide of the slide cylinder 8, allowing it to rise and fall synchronously with the slide, while also rotating around its vertical axis. The rotating platform of the swing cylinder 10 is fixed to the clamp lever 9 via a connector, converting the rotational motion into the horizontal swinging motion of the clamping arm.

[0028] In this embodiment, the clamping mechanism 3 operates strictly according to a fixed sequence: initially, the clamping mechanism is in the outer reset position. After the wafer vacuum adsorption is completed, the stage cylinder 10 rotates forward, driving the clamping arm to swing horizontally in via the clamp lever 9, so that the clamping end is precisely moved to directly above the wafer edge; then, the slide cylinder 8 drives the entire structure to descend vertically, with the clamping end adhering to the upper surface of the wafer edge, achieving wafer edge limiting clamping and preventing wafer slippage and warping during bonding. After the bonding process is completed, the slide cylinder 8 first drives the clamping arm to rise and detach from the wafer, and then the stage cylinder 10 rotates in the opposite direction, swinging the clamping arm out to the outside of the working area, completely avoiding the wafer transfer and alignment space, with no motion interference.

[0029] Three spacer mechanisms 4 are evenly spaced between two sets of clamping mechanisms 3, with uniform circumferential distribution, which can stably maintain the wafer bonding gap from all directions. The core baffle body of the spacer mechanism is made of titanium alloy TC4 and designed as a Z-shaped plate structure. The wedge-shaped tip at the front end can be precisely inserted into the wafer edge gap with low insertion resistance and high positioning accuracy; the bending transition section in the middle improves the structural toughness and avoids fracture and deformation during reciprocating motion; the rear connecting section is rigidly fixed by the spacer fixing plate 5, which ensures high assembly stability.

[0030] Each spacer mechanism is equipped with a set of dual-cylinder drive components, each set containing two drive cylinders 7. The spacer adjusting rod 6 is hinged to the mounting base 62 fixed to the outer ring support 2 via a hinge shaft 61, forming a lever transmission structure. The end of the spacer adjusting rod 6 closest to the baffle is the short arm end, and the end furthest from the baffle is the long arm end. The two drive cylinders 7 act on the long arm end and the middle of the rod, respectively. During operation, through the alternating extension and retraction of the two drive cylinders 7, the connecting rod swings precisely in the horizontal plane with the hinge shaft 61 as the fulcrum, thereby driving the baffle body to smoothly insert or withdraw radially into or out of the wafer gap. The three sets of spacer mechanisms operate synchronously, ensuring uniform circumferential gaps between the wafers.

[0031] The overall workflow of this invention is as follows: Equipment initialization and reset of all mechanisms; placing the lower wafer on the adsorption surface of the silicon nitride chuck 1, opening the vacuum interface negative pressure, and completing the wafer flattening and adsorption fixation; three sets of spacer spacer mechanisms 4 operate synchronously, with the baffle body inserted above the wafer to precisely reserve the bonding gap; subsequently, the clamping mechanism 3 is placed in and lowered in sequence to clamp the wafer edge and complete the wafer positioning limit; wafer alignment and high-temperature bonding processes are executed; after bonding is completed, the clamping mechanism first rises to reset and then moves out to avoid the gap, the spacer mechanism exits the gap, the vacuum adsorption is released, and the wafer unloading and chuck reset are completed, allowing for rapid entry into the next round of loading and bonding processes.

[0032] In this embodiment, the chuck adopts a modular quick-loading structure. The standardized mechanical interface can be adapted to the automatic transfer platform of the equipment, making it easy to disassemble and assemble and accurately position. At the same time, through the combination of high-temperature resistant materials, precise pneumatic lever drive, and standardized collaborative action sequence, the technical problems of poor high-temperature stability, low gap accuracy, mechanical interference, and weak adaptability of traditional chucks are completely solved, which greatly improves the precision of wafer bonding process and mass production efficiency.

[0033] The above description is merely a preferred embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, component splitting or combination, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A high-temperature resistant, rapid-loading bonding chuck for wafer bonding equipment, mounted on a lower wafer transfer stage, characterized in that, include: The silicon nitride chuck is disc-shaped with a flat wafer adsorption surface on its upper surface and a vacuum passage inside. The vacuum passage is connected to an external negative pressure source and is used to vacuum adsorb and fix the lower wafer placed on the silicon nitride chuck. The outer ring support is disposed around the periphery of the silicon nitride chuck and arranged around the wafer edge region to provide support for the wafer edge during wafer bonding. Two sets of clamping mechanisms are arranged opposite each other in the circumferential direction. Each set of clamping mechanisms includes a clamping arm and a clamping end. The clamping end is located at one end of the clamping arm and extends toward the center of the silicon nitride chuck, and is used to clamp and limit the edge position of the wafer that is set opposite to it. Three spacer spacer mechanisms are arranged circumferentially between the two sets of clamping mechanisms. Each spacer spacer mechanism includes a baffle body, which is Z-shaped and has a wedge-shaped tip at the front end, a bent transition section in the middle, and a connecting section at the rear end. A partition fixing plate is fixedly connected to the rear connecting section of the baffle body, and is used to install and fix the baffle body; The diaphragm adjusting link is in the shape of a long rod, one end of which is fixedly connected to the diaphragm fixing plate, and the middle part of the diaphragm adjusting link and the other end away from the diaphragm fixing plate are respectively engaged with the drive assembly; Six drive cylinders are divided into three groups. Each group has two drive cylinders corresponding to one spacer spacer mechanism. The two drive cylinders in each group act on the other end of the spacer adjusting rod and the middle part of the spacer adjusting rod, respectively. The spacer adjusting rod is located between the two drive cylinders in each group and is hinged to the mounting seat fixed on the outer ring support through a hinge shaft. Through the coordinated telescopic movement of the two drive cylinders, the spacer adjusting rod is driven to swing with the hinge shaft as the fulcrum, thereby driving the baffle body to complete the insertion or withdrawal action. The outer ring support, spacer spacer mechanism, and clamping mechanism are arranged coaxially around the silicon nitride chuck, so that after the lower wafer is adsorbed and fixed, the spacer spacer mechanism first maintains the gap, and then the clamping mechanism performs edge limiting and clamping.

2. The high-temperature resistant, rapid-loading bonding chuck for wafer bonding equipment according to claim 1, characterized in that, One end of the partition adjusting rod connected to the partition fixing plate is a short arm end, and the other end of the partition adjusting rod is a long arm end. In each group, the piston rod of one of the driving cylinders is hinged or abutted to the long arm end, and the piston rod of the other driving cylinder is hinged or abutted to the middle of the partition adjusting rod. Through the alternating extension and retraction of the two driving cylinders, the partition adjusting rod is oscillating with the hinge axis as the fulcrum, thereby driving the partition fixing plate and the baffle body to reciprocate along the radial direction of the silicon nitride chuck, realizing the insertion or withdrawal of the baffle body.

3. A high-temperature resistant, rapid-loading bonding chuck for wafer bonding equipment according to claim 1, characterized in that, The hinge shaft is arranged in the horizontal direction, allowing the partition adjustment linkage to swing in the horizontal plane; the baffle body is located above the upper surface of the silicon nitride chuck, the partition fixing plate is fixedly connected to the rear end connecting section of the baffle body, and the front wedge-shaped tip of the baffle body extends toward the center of the silicon nitride chuck.

4. A high-temperature resistant, rapid-loading bonding chuck for wafer bonding equipment according to claim 1, characterized in that, Each set of the clamping mechanism also includes: A slide cylinder has a slide that can be raised and lowered in the vertical direction; A swing cylinder is installed on the slide of the slide cylinder and can rise and fall synchronously with the slide of the slide cylinder. The swing cylinder has a rotating platform that can rotate around a vertical axis. The clamp lever is rod-shaped, with one end fixedly connected to the rotating table of the swing cylinder and the other end connected to the transmission part of the clamping arm, used to convert the rotational motion of the swing cylinder into the horizontal swinging motion of the clamping arm. The stage cylinder drives the clamping arm to swing in to above the wafer edge or out to a position other than the working position in the horizontal plane via the clamp lever. The slide cylinder drives the clamping arm and clamping end to descend as a whole to clamp the wafer edge or rise to release the wafer.

5. A high-temperature resistant, rapid-loading bonding chuck for wafer bonding equipment according to claim 4, characterized in that, The slide cylinder includes a cylinder body, a slide, and a guide mechanism. The base of the swing cylinder is fixed on the slide. The swing cylinder includes a base, a rotating platform, and a rotation drive mechanism. The rotating platform is rotatably mounted on the base around a vertical axis. One end of the clamp lever is fixedly connected to the rotating platform through a connector.

6. A high-temperature resistant, rapid-loading bonding chuck for wafer bonding equipment according to claim 4, characterized in that, The timing sequence of each clamping mechanism is as follows: the swing cylinder first drives the clamp lever, causing the clamping arm and clamping end to swing into position above the wafer edge; then the slide cylinder drives the clamping arm and clamping end downward, causing the clamping end to press against the upper surface of the wafer edge, thereby achieving stable clamping of the wafer edge; after completing the bonding preparation, the slide cylinder first drives the clamping arm and clamping end upward, and then the swing cylinder rotates in the opposite direction, causing the clamping arm to swing out of the working position via the clamp lever.

7. A high-temperature resistant, rapid-loading bonding chuck for wafer bonding equipment according to claim 1, characterized in that, The outer ring support is a continuous ring structure or a segmented ring splicing structure. The inner diameter of the outer ring support is larger than the outer diameter of the silicon nitride chuck. An annular gap is formed between the outer ring support and the silicon nitride chuck. The baffle body of the spacer spacer mechanism extends through or across the annular gap to below or to the side of the wafer edge.

8. A high-temperature resistant, rapid-loading bonding chuck for wafer bonding equipment according to claim 1, characterized in that, The upper surface of the silicon nitride chuck is provided with uniformly distributed vacuum adsorption holes or microgrooves, which are connected to the vacuum passage.

9. A high-temperature resistant, rapid-loading bonding chuck for wafer bonding equipment according to claim 1, characterized in that, It also includes an air pipe interface and a vacuum interface. The air pipe interface is used to connect an external air source to the drive cylinder, the slide cylinder, and the swing cylinder. The vacuum interface is connected to the vacuum passage inside the silicon nitride chuck and is used to connect to an external negative pressure source.

10. A high-temperature resistant, rapid-loading bonding chuck for wafer bonding equipment according to claim 1, characterized in that, The outer ring support is made of high-temperature alloy 718, and the baffle body in the spacer spacer mechanism is made of titanium alloy TC4.

Images