Method of manufacturing an electronic device

Abstract

A manufacturing method of an electronic device includes: a cleaning step A of cleaning a surface protective film A of an electronic component having the surface protective film A on one face after at least one treatment selected from light irradiation and heating is performed on the surface protective film A.

Description

Technical Field

[0001] This invention relates to a method for manufacturing an electronic device. Background Technology

[0002] In the manufacture of electronic devices, for example, to prevent damage to electronic components, a surface protective film is sometimes applied to the electronic device.

[0003] As for the technology related to the manufacturing method of electronic devices using surface protective films, the technology described in Patent Documents 1 and 2 can be cited as an example.

[0004] Patent Document 1 discloses a semiconductor processing tape comprising a water-soluble film containing a high molecular weight compound with a weight average molecular weight of 200,000 or more and a low molecular weight compound with a molecular weight of 800 or less, and a surface protective tape protecting the circuit surface of a semiconductor wafer. Furthermore, Patent Document 1 discloses a semiconductor processing tape that can provide both grooving resistance and wafer adhesion while being washable with non-heated water.

[0005] Patent Document 2 discloses a surface protection composition for protecting at least one side of a substrate, comprising a polymer having hydrophilic groups in its molecules and a compound that generates an acid or base by at least one of heating or irradiation with active energy rays. Furthermore, Patent Document 2 discloses a surface protection composition capable of forming a protective layer that, after protecting at least one side of a substrate in a manufactured electronic component device, can be easily removed upon contact with an aqueous liquid.

[0006] Existing technical documents

[0007] Patent documents

[0008] Patent Document 1: Japanese Patent Application Publication No. 2023-043723

[0009] Patent Document 2: International Publication No. 2023 / 195445 Summary of the Invention

[0010] The problem that the invention aims to solve

[0011] However, when surface protective films are used in the manufacture of electronic devices, residues from the surface protective film sometimes remain on the surface of electronic components after the film has been peeled off.

[0012] The present invention provides a method for manufacturing an electronic device that can reduce residues from surface protective films on the surface of electronic components.

[0013] Methods for solving problems

[0014] The inventors conducted in-depth research to solve the aforementioned problems. Their findings revealed that, in the manufacturing process of electronic devices, by performing a step of cleaning the surface protective film after subjecting the surface protective film to at least one treatment selected from light irradiation and heating, it is possible to reduce residues from the surface protective film on the surface of the electronic components.

[0015] That is, according to the present invention, a method for manufacturing the electronic device shown below is provided. [1]

[0017] A method for manufacturing an electronic device includes: a cleaning step A, wherein the surface protective film A of an electronic component having a surface protective film A on its surface is cleaned after being subjected to at least one treatment selected from light irradiation and heating. [2]

[0019] According to the manufacturing method of the electronic device described in [1], before the cleaning step A, the method further includes a step of attaching the side of the electronic component opposite to the side of the surface protective film A to the substrate A. [3]

[0021] According to the manufacturing method of the electronic device described in [1] or [2], before the cleaning step A, a DC step is further included: cutting a structure A that sequentially includes at least a cutting tape, the surface protective film A and the electronic component. [4]

[0023] According to the manufacturing method of the electronic device described in [3], the structure A further comprises a temporary fixing material and a substrate B on the side of the electronic component opposite to the surface protective film A. [5]

[0025] According to the manufacturing method of the electronic device described in [4], before the DC process described above, there is a peeling process of peeling the temporary fixing material and the substrate B from the structure A. [6]

[0027] According to the manufacturing method of the electronic device described in [4] or [5], before the DC process described above, the method further includes: a process of preparing a structure C which sequentially includes the electronic component, the temporary fixing material and the substrate B; and a BG process of back-side grinding the side of the electronic component in the structure C opposite to the side of the temporary fixing material. [7]

[0029] According to the manufacturing method of the electronic device described in [3], the structure A further has a surface protective film B on the side opposite to the surface protective film A of the electronic component. [8]

[0031] According to the manufacturing method of the electronic device described in [7], after the DC process described above, a cleaning process B is included, which involves cleaning the surface protective film B after subjecting the surface protective film B to at least one treatment selected from light irradiation and heating. [9]

[0033] According to the manufacturing method of the electronic device described in [7] or [8], the structure A further comprises a temporary fixing material and a substrate B on the surface protective film B in sequence.

[10]

[0035] According to the manufacturing method of the electronic device described in [9], prior to the DC process, the method further includes a peeling process for peeling the temporary fixing material and the substrate B from the structure A.

[11]

[0037] According to the manufacturing method of the electronic device described in [9] or

[10] , before the DC process, the method further includes: a process of preparing a structure B which sequentially comprises the electronic component, the surface protective film B, the temporary fixing material and the substrate B; and a BG process of back-side grinding of the side of the electronic component in the structure B opposite to the side of the surface protective film B.

[12]

[0039] The method for manufacturing an electronic device according to any one of [1] to

[11] includes, after the cleaning step A, a step of stacking other electronic components on the surface of the electronic component where the surface protective film A has been cleaned.

[13]

[0041] The method for manufacturing an electronic device according to any one of [1] to

[12] , wherein the cleaning solution in the cleaning step A comprises one or more of the group consisting of organic solvents and water.

[14]

[0043] The method of manufacturing an electronic device according to any one of [1] to

[13] , wherein the electronic component has a through electrode.

[15]

[0045] The method of manufacturing an electronic device according to any one of [1] to

[14] , wherein the surface protective film A comprises a film that becomes washable with a cleaning solution by performing at least one treatment selected from light irradiation and heating.

[16]

[0047] The method for manufacturing an electronic device according to any one of [1] to

[15] , wherein the surface protective film A comprises a surface protective composition, the surface protective composition comprising a polymer (A) having acid-decomposing groups, and an acid-generating agent (B) comprising at least one selected from photoacid-generating agents and thermal acid-generating agents.

[17]

[0049] According to the method for manufacturing an electronic device as described in

[16] , the acid-degradable group comprises one or more groups selected from the group consisting of alkyl groups and groups containing ether bonds.

[18]

[0051] According to the method of manufacturing an electronic device as described in

[16] or

[17] , the polymer (A) comprises a structural unit (a) of (meth)acrylate (a) having the above-described acid-degradable groups.

[19]

[0053] The method for manufacturing an electronic device according to any one of

[16] to

[18] , wherein the acid-generating agent (B) comprises a photoacid-generating agent.

[20]

[0055] According to the manufacturing method of the electronic device described in

[19] , the photoacid generator comprises one or more selected from sulfonium salt type photoacid generators, iodine salt type photoacid generators and nonionic photoacid generators.

[0056] Invention Effects

[0057] According to the present invention, a method for manufacturing an electronic device is provided that can reduce residues from the surface protective film on the surface of electronic components. Attached Figure Description

[0058] Figure 1 This is a cross-sectional view schematically illustrating a method for manufacturing an electronic device according to a first embodiment of the present invention.

[0059] Figure 2 This is a cross-sectional view schematically illustrating a method for manufacturing an electronic device according to a second embodiment of the present invention. Detailed Implementation

[0060] Hereinafter, embodiments of the present invention will be described using the accompanying drawings. In all the drawings, the same reference numerals are used to label the same constituent elements, and descriptions are omitted where appropriate. All drawings are for illustrative purposes only. The shapes, dimensions, etc., of the components in the drawings may not correspond to actual objects.

[0061] In addition, unless otherwise specified in this specification, “A~B” indicating a numerical range means above A and below B.

[0062] In addition, in this embodiment, "(meth)acrylic acid" refers to acrylic acid, methacrylic acid, or both acrylic acid and methacrylic acid.

[0063] <Methods for Manufacturing Electronic Devices>

[0064] (First Implementation)

[0065] Reference Figure 1 A first embodiment of the method for manufacturing the electronic device according to this embodiment will be described. Figure 1 This is a cross-sectional view schematically illustrating a method for manufacturing an electronic device according to a first embodiment of the present invention.

[0066] (Cleaning Process A)

[0067] The manufacturing method of the electronic device according to this embodiment includes: a cleaning step A ( ) after subjecting the surface protective film A (10) of an electronic component (20) having a surface protective film A (10) on one surface to at least one treatment selected from light irradiation and heating, cleaning the surface protective film A (10). Figure 1 (h)

[0068] The method for manufacturing an electronic device according to this embodiment allows for the cleaning of a surface protective film A after performing at least one treatment selected from light irradiation and heating on one surface of an electronic component. Therefore, before performing at least one treatment selected from light irradiation and heating, the surface protective film A can protect the electronic component from external particles, external stress, etc. On the other hand, after performing at least one treatment selected from light irradiation and heating, the surface protective film A can be cleaned, thus reducing residue on the surface protective film A on the electronic component. Therefore, before and after at least one treatment selected from light irradiation and heating, residue from the surface protective film on the surface of the electronic component can be reduced.

[0069] Cleaning process A ( Figure 1 (h) is performed as follows, for example.

[0070] By subjecting the surface protective film A (10) to at least one treatment selected from light irradiation and heating, the structure of the surface protective film A (10) is changed, making it possible to peel or dissolve the surface protective film A (10) from the electronic component (20) with a cleaning solution. As a result, by cleaning the surface protective film A (10) with a cleaning solution, it is possible to further reduce the residue from the surface protective film on the surface of the electronic component.

[0071] In the case where the acid-generating agent (B) in the surface protective film A (10) described later contains a photoacid-generating agent, it is preferable to irradiate the surface protective film A (10) with light.

[0072] Specifically, the light irradiation is UV irradiation, preferably at an illuminance of 5 mW / cm². 2 Above and 9000mW / cm 2 The following conditions must be met: irradiation time between 10 and 300 seconds, and cumulative light intensity of 500 mJ / cm². 2 Above and 300J / cm 2 The experiment was conducted under ultraviolet light conditions with wavelengths above 200 nm and below 400 nm.

[0073] Furthermore, the surface protective film A(10) can be heated in addition to light irradiation. Heating in addition to light irradiation can further improve cleanability, thereby further reducing residues from the surface protective film on the surface of electronic components.

[0074] As for the heating temperature, from the viewpoint of further increasing the dissolution rate of the surface protective film A (10), it is preferably 100°C or higher and 200°C or lower, more preferably 120°C or higher and 180°C or lower, and even more preferably 140°C or higher and 160°C or lower. In addition, the heating time is preferably 1 minute or higher and 30 minutes or lower, more preferably 2 minutes or higher and 15 minutes or lower.

[0075] Light irradiation and heating can be performed simultaneously, or heating can be performed after light irradiation.

[0076] In addition, if the acid-generating agent (B) in the surface protective film A (10) includes a photoacid-generating agent, it is more preferable to irradiate the surface protective film A (10) with light only.

[0077] When the acid-generating agent (B) in the surface protective film A (10) contains a thermal acid-generating agent, it is preferable to heat the surface protective film A (10).

[0078] The heating temperature is preferably 100°C or higher and 200°C or lower, more preferably 120°C or higher and 180°C or lower, and even more preferably 140°C or higher and 160°C or lower. The heating time is preferably 1 minute or higher and 30 minutes or lower, more preferably 2 minutes or higher and 15 minutes or lower.

[0079] For the surface protective film A (10), it is preferable to clean the surface protective film A (10) and the electronic components (20) with a cleaning solution after heating, light irradiation, or heating and light irradiation as described above.

[0080] Cleaning process A ( Figure 1 The cleaning solution in (h) preferably contains one or more of the group consisting of organic solvents and water, more preferably water.

[0081] Organic solvents include, for example, one or more selected from the group consisting of ethanol, methanol, isopropanol and butanol.

[0082] Organic solvents and water can be used alone or in combination of two or more.

[0083] In addition, in cleaning process A ( Figure 1 The electronic components (20) cleaned in (h) can also be cleaned through the DC process described later. Figure 1 (e) Monolithic electronic components (21).

[0084] (Cut (DC) process)

[0085] The manufacturing method of the electronic device in this embodiment can be carried out in the cleaning process A ( Figure 1 Prior to (h), the process also includes a DC process for cutting a structure A (200) that sequentially comprises at least a cutting tape (50), a surface protective film A (10), and an electronic component (20). Figure 1 (e)).

[0086] Cutting means to manufacture a single-piece electronic component (21) by cutting the electronic component (20) into a single piece.

[0087] In DC process ( Figure 1 In (e)), it is preferable to cut from the side of the electronic component (20) in structure A (200) opposite to the side with the cutting tape (50) and the surface protective film A (10).

[0088] As a cutting method, a known method can be selected, such as one or more of the group consisting of plasma cutting, laser cutting and blade cutting.

[0089] According to the manufacturing method of the electronic device of this embodiment, before performing at least one treatment selected from light irradiation and heating, it is possible to prevent the surface protective film A (10) from dissolving or peeling off from the electronic component (20) due to water. Therefore, for example, in the case of using cutting water in a blade cutting method, the surface protective film A (10) can also perform the surface protection function of the electronic component (20).

[0090] It should be noted that the cutting tape (50) and the surface protective film A (10) can be pre-attached to form an integral tape. Alternatively, the structure A (200) can be formed by attaching the surface protective film A (10) of the integral tape to the electronic component (20).

[0091] In the manufacturing method of the electronic device of this embodiment, the structure A (200) may further include a temporary fixing material (30) and a substrate B (40) sequentially on the surface of the electronic component (20) opposite to the surface protective film A (10). Figure 1 (c)).

[0092] Here, substrate B (40) is, for example, a glass plate or a stainless steel plate, and is used in the BG process described later. Figure 1 The layer supporting the electronic components (20) in (b)).

[0093] The temporary fixing material (30) is a layer that contacts and adheres to the side of the electronic component (20) opposite to the surface protective film A (10) when the substrate B (40) is attached to the electronic component (20). Additionally, it is used in the BG process described later. Figure 1 After (b)), the layer is peeled off from the electronic component (20) together with the substrate B (40).

[0094] Temporary fixing materials (30) include, for example, heat-peeling adhesive resin layers whose adhesive strength decreases due to heating, and radiation-peeling adhesive resin layers whose adhesive strength decreases due to radiation.

[0095] (Stripping process)

[0096] The manufacturing method of the electronic device in this embodiment can also be performed in the DC process ( Figure 1 Prior to (e), the process also includes a peeling process of removing temporary fixing material (30) from structure A (200) and substrate B (40). Figure 1 (d)

[0097] By peeling the temporary fixing material (30) and the substrate B (40) from structure A (200), the electronic components (20) are exposed, thus enabling the DC process ( Figure 1 In (e) the electronic component (20) is cut.

[0098] The operation of peeling the temporary fixing material (30) from structure A (200) and substrate B (40) is sometimes done manually, but it can usually be done by a device called an automatic peeling machine.

[0099] In DC process ( Figure 1 Cleaning steps C can also be performed as needed, either before or after (e)). Figure 1 In the cleaning process C described above, the surface of the electronic component 20 after the temporary fixing material 30 and the substrate B (40) are removed is cleaned. Examples of cleaning methods include wet cleaning such as water cleaning and solvent cleaning, and dry cleaning such as plasma cleaning. In the case of wet cleaning, ultrasonic cleaning may also be used. These cleaning methods can be appropriately selected according to the degree of contamination on the surface of the electronic component (20).

[0100] According to the manufacturing method of the electronic device of this embodiment, before performing at least one treatment selected from light irradiation and heating, it is possible to suppress the surface protective film A (10) from dissolving due to water or peeling off from the electronic component (20), so that even in the cleaning process C ( Figure 1 In the use of water, solvents, etc., the surface protective film A (10) can also play the surface protection function of electronic components (20).

[0101] (Backside Grinding (BG) Process)

[0102] The manufacturing method of the electronic device in this embodiment can also be performed in the DC process ( Figure 1 Prior to (e), the process also includes: preparing a structure C (100) having electronic components (20), temporary fixing material (30), and substrate B (40) in sequence. Figure 1 (a)); and the BG process of back-side grinding of the side opposite to the side of the temporary fixing material (30) of the electronic component (20) in structure C (100). Figure 1 (b)

[0103] Such a structure C (100) can be fabricated, for example, by sequentially attaching a temporary fixing material (30) and a substrate B (40) to the electronic component (20). Figure 1 (a)

[0104] Here, back-side grinding refers to thinning the electronic component (20) to a predetermined thickness without damaging it.

[0105] For example, the structure C (100) is fixed to the chuck table of a grinding machine, and the back side (non-wired surface) of the electronic component (20) is ground.

[0106] There are no particular limitations on the back-side grinding method, and any known grinding method can be used. Each grinding operation can be performed while cooling the electronic component 20 and the grinding stone with water. If necessary, a dry polishing process without grinding water can be performed at the end of the grinding process. After the back-side grinding is completed, chemical etching is performed as needed. Chemical etching is performed by immersing the electronic component (20) in an etching solution selected from the group consisting of an acidic aqueous solution containing hydrofluoric acid, nitric acid, sulfuric acid, acetic acid, or a mixture thereof, an alkaline aqueous solution such as potassium hydroxide aqueous solution, or a sodium hydroxide aqueous solution. Etching is performed for the purpose of removing strain generated on the back side of the electronic component (20), further thinning the electronic component (20), removing oxide films, and pretreatment when forming electrodes on the back side. The etching solution is appropriately selected according to the above purposes.

[0107] (D2W bonding process)

[0108] The manufacturing method of the electronic device in this embodiment can also be performed in cleaning step A ( Figure 1 Prior to (h), the process includes: attaching the side opposite to the surface protective film A (10) of the electronic component (20) (the monolithized electronic component (21)) to the substrate A (70). Figure 1 (g)). Here, the electronic component (20) (the monolithized electronic component (21)) is preferably directly bonded to the substrate A (70). This process is called D2W bonding (chip-to-wafer bonding) process.

[0109] Substrate A (70) represents, for example, a semiconductor wafer.

[0110] By directly stacking the electronic component (20) (the monolithic electronic component (21)) with the substrate A (70), the electronic component (20) (the monolithic electronic component (21)) can be electrically connected to the substrate A (70) using the through electrode (22) described later.

[0111] During the above cleaning process C ( Figure 1 In the case of (f), the D2W bonding process ( Figure 1 (g) is preferably used in the cleaning process C ( Figure 1 It is performed after (f)), preferably after the cleaning process C. Figure 1 The cleaning surface of the electronic component (20) (the monolithized electronic component (21)) is bonded to the substrate A (70).

[0112] Furthermore, the manufacturing method of the electronic device in this embodiment can also be performed in the D2W bonding process ( Figure 1 After (g) and cleaning process A ( Figure 1The process (h) includes, before which a step (not shown) is taken to peel the cutting tape (50) from the surface protective film A (10). This exposes the surface protective film A (10), allowing for smoother cleaning of the cleaning step A (h). Figure 1 Cleaning of the surface protective film A(10) in (h)).

[0113] In the manufacturing method of the electronic device in this embodiment, the electronic component (20) may also have a through electrode (22).

[0114] A through electrode, for example, refers to an electrode that imparts conductivity to a through hole formed vertically inside a substrate, as described later, in the case of directly stacking multiple electronic components, to connect the upper and lower electronic components to each other.

[0115] The through electrode (22) can be formed, for example, in the BG process described above. Figure 1 Before or after (b) the electronic component (20) of structure C (100) is made, and conductive properties can be imparted by forming through holes in the electronic component (20) after copper plating.

[0116] The manufacturing method of the electronic device in this embodiment can also be performed in cleaning step A ( Figure 1 Following (h), the process includes: stacking other electronic components (80) on the surface of the electronic component (20) (the monolithized electronic component (21)) after the surface protective film A (10) has been cleaned. Figure 1 (i) Here, other electronic components (80) are preferably directly stacked on electronic component (20) (monolithized electronic component (21)). By directly stacking other electronic components (80) with electronic component (20) (monolithized electronic component (21)), the electronic components can be electrically connected to each other using the aforementioned through electrode (22).

[0117] According to the manufacturing method of the electronic device of this embodiment, the residue from the surface protective film on the surface of the electronic component (20) (the monolithically stacked electronic component (21)) can be further reduced, so even if the electronic components are directly stacked on each other, poor connection can be further suppressed.

[0118] (Second Implementation)

[0119] Reference Figure 2 A second embodiment of the method for manufacturing the electronic device according to this embodiment will be described. Figure 2 This is a cross-sectional view schematically illustrating a method for manufacturing an electronic device according to a second embodiment of the present invention.

[0120] Furthermore, in the second embodiment, the cleaning process A ( Figure 2 (h)), DC process ( Figure 2 (e)), D2W bonding process ( Figure 2 (g)), stacking process ( Figure 2 (i) is carried out according to the first embodiment.

[0121] In a second embodiment of the manufacturing method of the electronic device in this embodiment, the structure A (200) may further have a surface protective film B (60) on the surface of the electronic component (20) opposite to the surface protective film A (10).

[0122] If structure A (200) further includes a surface protective film B (60), the surface protective film B (60) can be used as a protective film in the DC process. Figure 2 It plays a role as a resist in ablation cutting and plasma cutting methods (e).

[0123] (Cleaning process B)

[0124] The second embodiment of the manufacturing method of the electronic device of this embodiment can also be carried out in the DC process ( Figure 2 (e) further includes: a cleaning step B(e) of cleaning the surface protective film B(60) after subjecting the surface protective film B(60) to at least one treatment selected from light irradiation and heating. Figure 2 (f)

[0125] Therefore, in cleaning process B ( Figure 2 In (f), it is possible to further reduce the residue from the surface protective film B (60) on the cut electronic component (20), thus in the subsequent D2W bonding process ( Figure 2 In (g), when the electronic component (20) (the monolithic electronic component (21)) is directly attached to the substrate A (70), poor connection can be further suppressed.

[0126] Cleaning process B ( Figure 2 (f) can be performed in accordance with the above cleaning process A. Figure 1 Under the same conditions as (h), light irradiation, heating and cleaning are performed.

[0127] When structure A (200) has a surface protective film B (60), structure A (200) may further have a temporary fixing material (30) and a substrate B (40) sequentially attached to the surface protective film B (60). Figure 2 (c)).

[0128] Details regarding the temporary fixing material (30) and the substrate B (40) have been described in the section on the first embodiment, and therefore will be omitted here.

[0129] When structure A (200) has a surface protective film B (60), structure A (200) can be manufactured, for example, by sequentially attaching the surface protective film B (60), temporary fixing material (30), and substrate B (40) to the electronic component (20). Figure 2 (a)

[0130] (Stripping process)

[0131] The second embodiment of the manufacturing method of the electronic device of this embodiment can also be carried out in the DC process ( Figure 2 Prior to (e), the process also includes a peeling process of removing temporary fixing material (30) from structure A (200) and substrate B (40). Figure 2 (d)

[0132] The above stripping process ( Figure 2 (d) can be performed according to the stripping process in the first embodiment. Figure 1 (d))

[0133] In the second embodiment, structure A (200) has a surface protective film B (60) between the electronic component (20) and the temporary fixing material (30). Therefore, after the temporary fixing material (30) and the substrate B (40) are peeled off from structure A (200), the residue of the temporary fixing material (30) remains on the surface protective film B (60). The surface protective film B (60) is then removed during the cleaning process B (…). Figure 2 The temporary fixing material (30) is cleaned in the (f) and therefore no residue of the temporary fixing material (30) remains on the electronic component (20) compared to the case without the surface protective film B (60), which is preferred in this respect.

[0134] (Backside Grinding (BG) Process)

[0135] A second embodiment of the method for manufacturing the electronic device according to this embodiment can be carried out in a DC process ( Figure 2 Prior to (e), the process also includes: preparing a structure B (300) having sequentially comprising electronic components (20), a surface protective film B (60), a temporary fixing material (30), and a substrate B (40). Figure 2 (a)); and the BG process of back-side grinding of the side opposite to the side of the surface protective film B (60) of the electronic component (20) in structure B (300). Figure 2 (b)

[0136] Such a structure B (300) can be fabricated, for example, by sequentially attaching a surface protective film B (60), a temporary fixing material (30), and a substrate B (40) to the electronic component (20). Figure 2 (a)

[0137] The above-mentioned BG process ( Figure 2 (b) can be performed according to the BG process in the first embodiment. Figure 1 The method of (b) is used.

[0138] The electronic device manufacturing method of this embodiment can reduce the residue from the surface protective film on the surface of the electronic component (20) during the manufacturing process of the electronic device.

[0139] Examples of electronic components include semiconductor chips, semiconductor panels, semiconductor packages, and semiconductor wafers.

[0140] In addition, the electronic device of this embodiment may include, for example, a single electronic component, a device for packaging electronic components, a device for combining multiple electronic components, or a device for mounting electronic components or packaged electronic devices on a substrate.

[0141] The manufacturing method of the electronic device according to this embodiment is preferably used for the manufacture of electronic devices (e.g., semiconductor packages) that are directly stacked and connected to each other without bumps or the like, and are referred to as hybrid bonding. More specifically, the manufacturing method of the electronic device according to this embodiment is preferably used for electronic devices (e.g., high-bandwidth memory (HBM)) in which electronic components having through electrodes (e.g., silicon through electrodes (TSVs)) (e.g., DRAM) are stacked. In such electronic devices, the electronic components are directly stacked to each other and connected via through electrodes, and therefore, poor connections are easily caused by fine residues (particles) left after the surface protective film or other adhesive tape is peeled off during the bonding of the electronic components. According to the manufacturing method of the electronic device according to this embodiment, the surface protective film can be cleaned, thereby reducing fine residues on the surface of the electronic components and further suppressing poor connections of the electronic device.

[0142] Next, the surface protective film A (10) in the manufacturing method of the electronic device of this embodiment will be described. It should be noted that the surface protective film B (60) may also be a film having the same material and structure as the surface protective film A (10).

[0143] <Surface Protective Film>

[0144] The surface protective film A (10) preferably comprises a film that becomes washable with a cleaning solution by undergoing at least one treatment selected from light irradiation and heating.

[0145] Furthermore, the surface protective film A (10) more preferably comprises one or more films selected from the group consisting of: a film that becomes soluble in water by undergoing at least one treatment selected from light irradiation and heating; a film that becomes soluble in warm water (e.g., above 40°C and below 90°C, preferably above 50°C and below 80°C); a film that becomes soluble in organic solvents; a film that becomes peelable with water; a film that becomes peelable with warm water (e.g., above 40°C and below 90°C, preferably above 50°C and below 80°C); and a film that becomes peelable with organic solvents; more preferably, it comprises one or more films selected from the group consisting of: a film that becomes soluble in water by undergoing at least one treatment selected from light irradiation and heating; a film that becomes soluble in warm water (e.g., above 40°C and below 90°C, preferably above 50°C and below 80°C); and a film that becomes soluble in organic solvents; and even more preferably, it comprises a film that becomes soluble in water by undergoing at least one treatment selected from light irradiation and heating.

[0146] The surface protective film A (10) preferably comprises a surface protective composition comprising a polymer (A) having acid-degrading groups and an acid-generating agent (B) comprising at least one selected from photoacid-generating agents and thermal acid-generating agents.

[0147] Therefore, when the surface protective film A (10) is subjected to at least one treatment selected from light irradiation and heating, the acid-generating agent (B) generates acid, and the acid-decomposing groups in the polymer (A) are decomposed by the acid, thereby improving the cleanability of the surface protective film A (10) attached to the electronic component (20) and further reducing the residue from the surface protective film on the surface of the electronic component.

[0148] (Polymer(A))

[0149] The acid-degrading groups in polymer (A) preferably include one or more groups selected from alkyl groups and groups containing ether bonds.

[0150] As a result, the cleanability of the surface protective film A(10) is further improved, which can further reduce the residue from the surface protective film on the surface of electronic components.

[0151] Furthermore, from the viewpoint that it can be water-washed simply by using light irradiation, it is more preferable that the acid-degradable groups in polymer (A) include groups containing ether bonds.

[0152] From the viewpoint of further improving the water washability of the resulting membrane, the group containing an ether bond preferably includes one or more of the group selected from ethoxyethyl, propoxyethyl, isopropoxyethyl, butoxyethyl, isobutoxyethyl, (cyclohexyloxy)ethyl, and tetrahydropyranyl. More preferably, it includes one or more of the group selected from ethoxyethyl, propoxyethyl, isopropoxyethyl, butoxyethyl, and tetrahydropyranyl. Even more preferably, it includes one or more of the group selected from ethoxyethyl, propoxyethyl, isopropoxyethyl, and butoxyethyl.

[0153] As an alkyl group, from the viewpoint of further improving the cleanability of the surface protective film A (10), it is preferable to include at least one group selected from the group consisting of tert-butyl and isobornyl, and more preferably tert-butyl.

[0154] The polymer (A) preferably contains structural units (a) derived from (meth)acrylate (a) having acid-degradable groups.

[0155] By including structural units (a) from (meth)acrylate (a) in polymer (A), the water resistance of the surface protective film A (10) can be improved, thus, for example, in the DC process described above ( Figure 1 (e) and Figure 2 In (e)), the surface protective film A (10) will not dissolve or peel off from the electronic component (20) due to cutting water or other factors when the structure A (200) is cut with a blade, thus providing more reliable protection for the electronic component (20).

[0156] For the (meth)acrylate (a) in structural unit (a), when the acid-degradable group includes an alkyl group, from the viewpoint of being able to further improve the cleanability while maintaining the water resistance of the surface protective film A (10), it is preferable to include an acrylate.

[0157] For the (meth)acrylate (a) in structural unit (a), if the acid-degradable group includes a group containing an ether bond, from the viewpoint of maintaining the water resistance of the surface protective film A (10) while further improving the water washability of the obtained film and further improving the coating properties, it is preferable to include methacrylate.

[0158] From the viewpoint of being able to further improve the cleanability of the surface protective film A (10), the acid generator (B) preferably includes at least one selected from photo-acid generators and thermal acid generators, and more preferably includes a photo-acid generator.

[0159] From the viewpoint of further improving the cleanability of the surface protective film A (10), it is preferable to include one or more of the following as a photoacid generator: a sulfonium salt type photoacid generator, an iodine salt type photoacid generator, and a nonionic photoacid generator.

[0160] When the acid-decomposing group in the structural unit (a) of the polymer (A) includes an alkyl group, from the viewpoint of being able to further improve the cleanability of the surface protective film A (10), the photoacid generator preferably includes a nonionic photoacid generator, and more preferably includes a nonionic photoacid generator having a diazomethane structure.

[0161] When the acid-decomposing group in the structural unit (a) of the polymer (A) includes a group containing an ether bond, the photoacid generator may include any one of the above-mentioned sulfonium salt type photoacid generators, iodine salt type photoacid generators, and nonionic photoacid generators.

[0162] Examples of heat-generating acid agents include aromatic sulfonate salts, aromatic iodide salts, ammonium salts, aluminum chelates, and boron trifluoride amine complexes.

[0163] The embodiments of the present invention have been described above, but these are merely examples of the present invention, and various structures other than those described above may also be employed.

[0164] Furthermore, the present invention is not limited to the embodiments described above, and modifications and improvements made within the scope of not impairing the effects of the present invention are included in the present invention.

[0165] This application claims priority based on Japanese Application No. 2024-056245, filed on March 29, 2024, the entire contents of which are incorporated herein by reference.

[0166] Explanation of reference numerals in the attached figures

[0167] 10: Surface protective film A; 20: Electronic component; 21: Monolithic electronic component; 22: Through electrode; 30: Temporary fixing material; 40: Substrate B; 50: Cutting tape; 60: Surface protective film B; 70: Substrate A; 80: Other electronic components; 100: Structure C; 200: Structure A; 300: Structure B.

Claims

1. A method for manufacturing an electronic device, comprising: Cleaning step A involves cleaning the surface protective film A of an electronic component having a surface protective film A on its surface after subjecting the surface protective film A to at least one treatment selected from light irradiation and heating.

2. The method for manufacturing an electronic device according to claim 1, wherein, Before the cleaning step A, the process further includes: attaching the side of the electronic component opposite to the side of the surface protective film A to the substrate A.

3. The method for manufacturing an electronic device according to claim 1 or 2, wherein, Prior to the cleaning step A, a DC step is included, which involves cutting a structure A that sequentially comprises at least a cutting tape, the surface protective film A, and the electronic component.

4. The method for manufacturing an electronic device according to claim 3, wherein, The structure A further comprises a temporary fixing material and a substrate B on the side of the electronic component opposite to the surface protective film A.

5. The method for manufacturing an electronic device according to claim 4, wherein, Prior to the DC process, a peeling process is also included: peeling the temporary fixing material and the substrate B from the structure A.

6. The method of manufacturing an electronic device according to claim 4 or 5, wherein, Prior to the DC process, the process further includes: a process of preparing a structure C that sequentially comprises the electronic component, the temporary fixing material, and the substrate B; and a BG process of back-side grinding the side of the electronic component in the structure C opposite to the side of the temporary fixing material.

7. The method for manufacturing an electronic device according to claim 3, wherein, The structure A further has a surface protective film B on the surface of the electronic component opposite to the surface protective film A.

8. The method for manufacturing an electronic device according to claim 7, wherein, After the DC process, a cleaning process B is included, which involves cleaning the surface protective film B after subjecting it to at least one treatment selected from light irradiation and heating.

9. The method of manufacturing an electronic device according to claim 7 or 8, wherein, The structure A further comprises a temporary fixing material and a substrate B on the surface protective film B.

10. The method of manufacturing an electronic device according to claim 9, wherein, Prior to the DC process, a peeling process is also included: peeling the temporary fixing material and the substrate B from the structure A.

11. The method of manufacturing an electronic device according to claim 9 or 10, wherein, Prior to the DC process, the process further includes: a process of preparing a structure B that sequentially comprises the electronic component, the surface protective film B, the temporary fixing material, and the substrate B; and a BG process of back-side grinding the side of the electronic component in the structure B opposite to the side of the surface protective film B.

12. The method for manufacturing an electronic device according to any one of claims 1 to 11, wherein, After the cleaning step A, the process includes: stacking other electronic components on the surface of the electronic component where the surface protective film A has been cleaned.

13. A method for manufacturing an electronic device according to any one of claims 1 to 12, wherein, The cleaning solution in cleaning step A contains one or more of the following: organic solvents and water.

14. The method for manufacturing an electronic device according to any one of claims 1 to 13, wherein, The electronic component has a through electrode.

15. A method for manufacturing an electronic device according to any one of claims 1 to 14, wherein, The surface protective film A comprises a film that becomes washable with a cleaning solution by undergoing at least one treatment selected from light irradiation and heating.

16. The method for manufacturing an electronic device according to any one of claims 1 to 15, wherein, The surface protective film A comprises a surface protective composition comprising a polymer (A) having acid-decomposing groups and an acid-generating agent (B) selected from at least one of photoacid-generating agents and thermal acid-generating agents.

17. The method of manufacturing an electronic device according to claim 16, wherein, The acid-degrading group comprises one or more groups selected from the group consisting of alkyl groups and groups containing ether bonds.

18. The method of manufacturing an electronic device according to claim 16 or 17, wherein, The polymer (A) comprises a structural unit (a) derived from a (meth)acrylate (a) having the acid-degrading group.

19. The method for manufacturing an electronic device according to any one of claims 16 to 18, wherein, The acid-producing agent (B) includes a photoacid-producing agent.

20. The method of manufacturing an electronic device according to claim 19, wherein, The photoacid generator comprises one or more selected from sulfonium salt type photoacid generators, iodine salt type photoacid generators, and nonionic photoacid generators.

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