Die structure

By forming an anti-adhesive layer between the mold and the packaging module and between the punch and the packaging module, the problem of tin layer peeling off when the punching mold comes into contact with the tin layer of the semiconductor package is solved, and damage to the package is avoided. It also maintains the function and anti-stick properties of the mold.

CN222198542UActive Publication Date: 2024-12-20SILICONWARE PRECISION IND CO LTD
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Patent Information

Application Number
CN202420922532.X
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Priority Date
2024-04-23
Filing Date
2024-04-29
Publication Date
2024-12-20
Estimated Expiration
2034-04-29

AI Technical Summary

Technical Problem

When the punching mold comes into contact with the tin layer of the semiconductor package, the tin layer is easily peeled off and remains on the mold, resulting in the packaging being crushed or broken.

Method used

A first anti-adhesive layer (such as a drill-like film or drill-like carbon) is formed between the mold and the packaging module, and a second anti-adhesive layer is formed between the punch and the packaging module, between the metal parts and tin between the layers to reduce peeling and residue of the tin layer.

Benefits of technology

It effectively avoids or reduces the compression or rupture of the package, maintains the punching function of the mold, and improves the life of the adhesive layer and high temperature resistance, reducing the abnormal impact of the tin layer.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model relates to a mold structure, which is characterized in that at least one packaging module with an anti-oxidation layer is arranged on a mold on which a first anti-adhesion layer is formed, so that the first anti-adhesion layer is arranged between the mold and the anti-oxidation layer of the packaging module; and punching or cutting the packaging module with the anti-oxidation layer through a punch to obtain a punched or cut electronic packaging piece. Therefore, according to the invention, the anti-oxidation layer can be greatly reduced, or stripping objects are not easy to generate to remain on the mold structure, so that the adverse effects of crushing or cracking and the like on the electronic packaging piece can be avoided or reduced.
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Description

Technical Field

[0001] The present application relates to a mold structure, and more particularly to a mold structure with an anti-adhesion layer. Background Art

[0002] In the process of punching or cutting (such as singulation) the semiconductor package by the punching die, the metal part of the punching die needs to contact the surface of the semiconductor package so that the metal part of the punching die can punch or cut (such as singulation) the semiconductor package through the shearing principle. However, when the metal part of the punching die contacts the tin layer on the surface of the semiconductor package, it is easy to cause the tin layer of the semiconductor package to be peeled off and remain on the punching die, which in turn causes the semiconductor package to be crushed or cracked.

[0003] Figure 1A to Figure 1B The cross-sectional view of a semiconductor package 1 and a punching die 2 of the prior art is shown in the figure. As shown in the figure, the semiconductor package 1 may include a semiconductor chip 11, a lead frame 12 and a tin layer 13 (or tin plating layer), etc., and the punching die 2 may include a lower die 21 and a punch 22.

[0004] In the process of punching or cutting (such as singulation) the semiconductor package 1 by the punching die 2, the punch 22 of the punching die 2 utilizes the cutting line A and the shearing principle to punch or cut (such as singulation) the semiconductor package 1, in view of the characteristics that the lower die 21 and the punch 22 (metal part) of the punching die 2 need to contact the surface of the lead frame 12 of the semiconductor package 1.

[0005] However, the lower die 21 and the punch 22 of the punching die 2 will contact the tin layer 13 on the lead frame 12 of the semiconductor package 1. Therefore, after the tin layer 13 is punched and squeezed by the lower die 21 and the punch 22 of the punching die 2, it is easy to cause the peeling material B of the tin layer 13 (i.e., the peeled tin layer 13) to remain on the lower die 21 and the punch 22 of the punching die 2, thereby causing adverse effects such as crushing or rupture of the semiconductor package 1.

[0006] Therefore, how to overcome any of the above-mentioned problems in the prior art has become a topic that needs to be solved urgently. Utility Model Content

[0007] In view of the deficiencies of the above-mentioned prior art, the present application provides a mold structure, including: a mold, on which at least one packaging module with an anti-oxidation layer is set; a first anti-adhesion layer, which is formed on the mold, and the first anti-adhesion layer is between the mold and the anti-oxidation layer of the packaging module; and a punch, which performs a punching or cutting operation on the packaging module with the anti-oxidation layer on the mold on which the first anti-adhesion layer has been formed, so as to obtain a punched or cut electronic package.

[0008] The present application also provides a method for manufacturing an electronic package, comprising: placing at least one packaging module having an anti-oxidation layer on a mold having a first anti-adhesion layer formed thereon, so that the first anti-adhesion layer is located between the mold and the anti-oxidation layer of the packaging module; and punching or cutting the packaging module having the anti-oxidation layer on the mold having the first anti-adhesion layer formed thereon by a punch to obtain a punched or cut electronic package.

[0009] In the aforementioned mold structure and method for manufacturing an electronic package, the mold has at least one concave portion, and the packaging module with an anti-oxidation layer is disposed at the concave portion of the mold.

[0010] In the aforementioned mold structure, the mold and the punch are made of metal materials, and the anti-oxidation layer of the packaging module is a tin layer.

[0011] In the aforementioned mold structure and method for manufacturing an electronic package, the first anti-adhesion layer is a diamond-like film or diamond-like carbon.

[0012] In the aforementioned mold structure and method for manufacturing electronic packaging, the friction coefficient of the diamond-like film or diamond-like carbon is 0.1 μm±10%.

[0013] In the aforementioned mold structure and method for manufacturing electronic packaging, the hardness of the diamond-like film or diamond-like carbon is 60 GPa±10%.

[0014] In the aforementioned mold structure and method for manufacturing an electronic package, the scratch resistance of the diamond-like film or diamond-like carbon is greater than or equal to 30N.

[0015] In the aforementioned mold structure, the punch corresponds to the mold on which the first anti-adhesion layer has been formed, so that the packaging module with the anti-oxidation layer is located between the mold and the punch.

[0016] The aforementioned mold structure and method for manufacturing an electronic package also include forming a second anti-adhesion layer on the punch, so that the second anti-adhesion layer is located between the punch and the anti-oxidation layer of the packaging module.

[0017] In the aforementioned mold structure and method for manufacturing an electronic package, the second anti-adhesion layer is a diamond-like film or diamond-like carbon.

[0018] In the aforementioned method for manufacturing electronic packaging, the packaging module further comprises an electronic component and a lead frame, the electronic component is arranged on a seat of the lead frame, and an anti-oxidation layer is formed on the seat and a plurality of lead pins of the lead frame.

[0019] In the aforementioned method for manufacturing electronic packaging, the packaging module further comprises an electronic component and a lead frame, the electronic component is arranged on a plurality of lead pins of the lead frame, and an anti-oxidation layer is formed on the plurality of lead pins of the lead frame.

[0020] As can be seen from the above, in the mold structure and the method for manufacturing the electronic package of the present application, the first anti-adhesion layer (such as diamond-like film or diamond-like carbon) between the mold of the mold structure and the anti-oxidation layer (such as tin layer) of the packaging module is mainly used to protect the electronic package (packaging module), so that the anti-oxidation layer (such as tin layer) is greatly reduced or it is not easy to produce peeling materials to remain on the mold of the mold structure, thereby avoiding or reducing the adverse effects such as crushing or rupture of the electronic package.

[0021] Alternatively, the present application can also utilize a second anti-adhesion layer (such as a diamond-like film or diamond-like carbon) between the punch of the mold structure and the anti-oxidation layer (such as a tin layer) of the electronic package to protect the electronic package, so that the anti-oxidation layer (such as a tin layer) is greatly reduced or it is not easy to produce peeling materials to remain on the punch of the mold structure, thereby avoiding or reducing adverse effects such as crushing or rupture of the electronic package.

[0022] Alternatively, in addition to maintaining the punching (cutting) function of the mold and punch of the mold structure, the present application can also have the physical properties of the first anti-adhesion layer and the second anti-adhesion layer (such as diamond-like film or diamond-like carbon), such as long life and high temperature resistance, and can also make good use of the anti-adhesion properties of the first anti-adhesion layer and the second anti-adhesion layer (such as diamond-like film or diamond-like carbon) to avoid or greatly reduce the adhesion of the anti-oxidation layer (such as tin layer) to the mold structure, causing abnormalities or adverse effects on the electronic package. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1A to Figure 1B The figure is a cross-sectional schematic diagram of a semiconductor package and a punching die in the prior art.

[0024] FIG. 2A to FIG. 2E It is a cross-sectional schematic diagram of an embodiment of a method for manufacturing an electronic package and a mold structure of the present application.

[0025] Figure 2B ' is a cross-sectional schematic diagram of another embodiment of the packaging module of the present application.

[0026] Figure 3 It is a cross-sectional schematic diagram of another embodiment of the electronic package and mold structure of the present application.

[0027] Description of Reference Numerals

[0028] 1 Semiconductor Package

[0029] 11. Semiconductor Chip

[0030] 12 Lead Frame

[0031] 13 Tin layer

[0032] 2 Punching die

[0033] 21 Lower mold

[0034] 22 Punch

[0035] 3 Electronic packaging

[0036] 3a Package module

[0037] 31 Electronic components

[0038] 32 welding wire

[0039] 321 Solder Ball

[0040] 33 Lead Frame

[0041] 34 base

[0042] 35 Lead pin

[0043] 36 Anti-oxidation layer

[0044] 37 Encapsulation colloid

[0045] 4. Mould structure

[0046] 41 Mould

[0047] 42 recess

[0048] 43 Punch

[0049] 44 First anti-adhesive layer

[0050] 45 Second anti-adhesive layer

[0051] A Cutting Line

[0052] B. Exfoliation

[0053] C Cutting line. DETAILED DESCRIPTION

[0054] The following describes the implementation methods of the present application through specific embodiments. Those skilled in the art can easily understand other advantages and effects of the present application from the contents disclosed in this specification.

[0055] It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings attached to this specification are only used to match the contents disclosed in the specification for the understanding and reading of those skilled in the art, and are not used to limit the limiting conditions for the implementation of this application, so they have no substantial technical significance. Any modification of the structure, change in the proportional relationship, or adjustment of the size, without affecting the effects and purposes that can be achieved by this application, should still fall within the scope of the technical content disclosed in this application. At the same time, the terms such as "upper", "lower", "one", "two", "first", "second", etc. cited in this specification are only for the convenience of description, and are not used to limit the scope of the implementation of this application. The change or adjustment of their relative relationship should also be regarded as the scope of the implementation of this application without substantially changing the technical content.

[0056] FIG. 2A to FIG. 2E is a cross-sectional schematic diagram of an embodiment of a method for manufacturing an electronic package 3 and a mold structure 4 of the present application, and Figure 2B ' is a cross-sectional schematic diagram of another embodiment of the packaging module 3a of the present application. Meanwhile, the term "at least one" in the present application means more than one (such as one, two or three), and "a plurality of" means more than two (such as two, three, four or more than ten).

[0057] like Figure 2A As shown, at least one (such as multiple) electronic components 31 and at least one (such as multiple) lead frames 33 are provided, wherein each lead frame 33 may have a base 34 and multiple leads 35, and an anti-oxidation layer 36 (such as a tin layer) may be formed on the base 34 and multiple leads 35 of the lead frame 33, so as to effectively prevent the base 34 and multiple leads 35 of the lead frame 33 from being oxidized by the anti-oxidation layer 36 (such as a tin layer).

[0058] Next, the electronic component 31 is placed on a base 34 (such as a chip base) of the lead frame 33 , and then the electronic component 31 and the plurality of lead pins 35 of the lead frame 33 are electrically connected by bonding with a plurality of bonding wires 32 .

[0059] In one embodiment, the electronic component 31 may be an active component, a passive component or a combination of the two, the active component may be a semiconductor chip, and the passive component may be a resistor, a capacitor and / or an inductor. The seat 34 may be a die pad and may be made of a metal material or a heat dissipation material, the lead 35 (or lead pin) may be made of a metal material or a conductive material, and the anti-oxidation layer 36 may be a tin layer (or tin plating layer) or various anti-oxidation materials.

[0060] like Figure 2BAs shown, the electronic component 31, multiple welding wires 32 and a portion of the lead frame 33 (such as a portion of the base 34, the lead pins 35 or the anti-oxidation layer 36) are respectively covered with a packaging colloid 37, and another portion of the lead frame 33 (such as another portion of the base 34, the lead pins 35 or the anti-oxidation layer 36) is exposed to form at least one (such as multiple) packaging modules 3a.

[0061] In other words, a packaging module 3a using a lead frame 33 as a carrier (such as a chip carrier), such as a quad flat semiconductor package (Quad Flat Package; QFP) or a quad flat non-leaded (Quad Flat Non-leaded; QFN) semiconductor package, is manufactured by bonding an electronic component 31 (such as a semiconductor chip) on a lead frame 33 having a seat 34 (such as a chip seat) and a plurality of lead pins 35, and then electrically connecting a plurality of pads (not shown) on the surface of the electronic component 31 (such as a semiconductor chip) and the corresponding plurality of lead pins 35 through a plurality of welding wires 32 (such as gold wires), and then covering the electronic component 31 (such as a semiconductor chip) and the plurality of welding wires 32 (such as gold wires) with a packaging colloid 37 to form the packaging module 3a. In addition, the base 34 (such as the chip base) may be designed to have a surface exposed outside the packaging colloid 37 to form an exposed pad type packaging module 3a, so as to accelerate the dissipation of heat on the electronic component 31 (such as a semiconductor chip) through the base 34 (such as the chip base).

[0062] like Figure 2B In another embodiment of the package module 3a, each lead frame 33 may also only have a plurality of lead pins 35 without Figure 2B The seat body 34 (such as a chip seat) is used to place the electronic component 31 on the multiple lead pins 35 of the lead frame 33, and the electronic component 31 is electrically connected to the multiple lead pins 35 of the lead frame 33 in a flip chip manner through multiple solder balls 321. At the same time, an anti-oxidation layer 36 (such as a tin layer) can be formed on the multiple lead pins 35 of the lead frame 33 to prevent the multiple lead pins 35 of the lead frame 33 from being oxidized.

[0063] Next, the electronic component 31, the plurality of welding wires 32 and a portion of the lead frame 33 (such as a portion of the lead pins 35 or the anti-oxidation layer 36) are respectively covered with a packaging colloid 37, and another portion of the lead frame 33 (such as another portion of the lead pins 35 or the anti-oxidation layer 36) is exposed to form at least one (such as multiple) packaging modules 3a.

[0064] Then, you can Figure 2B or Figure 2B The packaging module 3a shown in the figure is subjected to various processes or operations such as curing, de-flash, laser marking, etc.

[0065] It should be noted that the above Figure 2B and Figure 2B The package module 3a with the lead frame 33 shown in the figure is only an embodiment of the present application, and is not intended to limit the state of the package module 3a. Figure 2B and Figure 2B In addition to the structure of the lead frame 33 of the package module 3a shown in the embodiment of FIG. 1 , in other embodiments, the package module 3a may also include various different structures such as metal elements, metal layers, metal plates, conductive elements, conductive layers, conductors, etc., which are not listed one by one.

[0066] like Figure 2C As shown, a mold structure 4 is provided, which includes a mold 41, a punch 43, a first anti-adhesion layer 44, and a second anti-adhesion layer 45. The first anti-adhesion layer 44 and the second anti-adhesion layer 45 can be formed on the mold 41 and the punch 43 of the mold structure 4 by coating or plating, respectively. The mold 41 can have at least one (such as multiple) recesses 42, and the mold 41 and the punch 43 can be made of metal materials. However, in other embodiments (see Figure 3 ), the present application may also only form the first anti-adhesion layer 44 on the mold 41 of the mold structure 4, without forming the second anti-adhesion layer 45 on the punch 43 of the mold structure 4.

[0067] In one embodiment, the mold 41 may be a lower mold, etc., and the mold structure 4 may be a punching mold, etc.

[0068] In one embodiment, the first anti-adhesion layer 44 and the second anti-adhesion layer 45 may be anti-adhesion materials such as diamond-like film or diamond-like carbon. The diamond-like film or diamond-like carbon of the first anti-adhesion layer 44 and the second anti-adhesion layer 45 has the characteristics of anti-adhesion and high life. The friction coefficient of the diamond-like film or diamond-like carbon is about 0.1μm±10% and the anti-adhesion property is good. The hardness of the diamond-like film or diamond-like carbon is about 60Gpa±10% and the life is long. At the same time, the diamond-like film or diamond-like carbon of the first anti-adhesion layer 44 and the second anti-adhesion layer 45 will not affect the properties of the mold 41 and the punch 43 (metal parts) of the mold structure 4 when the coating or plating temperature is less than 150 degrees Celsius, and the scratch resistance of the diamond-like film or diamond-like carbon can reach (such as greater than or equal to) 30N and is not easy to peel off.

[0069] like Figure 2D As shown, for example Figure 2B or Figure 2B '(by Figure 2BFor example, at least one packaging module 3a having an anti-oxidation layer 36 is turned upside down and placed on a mold 41 on which a first anti-adhesion layer 44 has been formed (such as at the recess 42 of the mold 41), so that the first anti-adhesion layer 44 is interposed between the mold 41 of the mold structure 4 and the anti-oxidation layer 36 (such as a tin layer) of the packaging module 3a (such as a lead frame 33), and the second anti-adhesion layer 45 is interposed between the punch 43 of the mold structure 4 and the anti-oxidation layer 36 (such as a tin layer) of the packaging module 3a (such as a lead frame 33), and the first anti-adhesion layer 44 formed on the mold 41 can directly contact the anti-oxidation layer 36 (such as a tin layer) of the packaging module 3a (such as a lead frame 33).

[0070] like Figure 2E As shown, the punch 43 of the mold structure 4 is aligned with the mold 41 on which the first anti-adhesion layer 44 has been formed, so that the package module 3a with the anti-oxidation layer 36 is located between the mold 41 and the punch 43. Figure 2D The cutting line C in the figure is used to perform a punching or cutting (such as singulation) operation on the packaging module 3a having the anti-oxidation layer 36 on the mold 41 on which the first anti-adhesion layer 44 has been formed, so as to obtain a punched or cut (such as singulation) electronic package 3.

[0071] Figure 3 FIG. 4 is a cross-sectional schematic diagram of another embodiment of the electronic package 3 and the mold structure 4 of the present application. Figure 3 As shown, the present application may only form the first anti-adhesion layer 44 on the mold 41 of the mold structure 4, without forming the FIG. 2C to FIG. 2E The second anti-adhesion layer 45 is shown on the punch 43 of the mold structure 4 so that the punch 43 can directly correspond to or contact the anti-oxidation layer 36 (such as the tin layer) of the package module 3a (such as the lead frame 33). FIG. 2D to FIG. 2E The packaging module 3a having the anti-oxidation layer 36 is punched or cut (such as singulated) by the punch 43 of the mold structure 4 (but without forming the second anti-adhesion layer 45) to obtain the punched or cut (such as singulated) electronic package 3.

[0072] The present application also provides a mold structure 4, including: a mold 41, which is used to set (such as carrying / accommodating) at least one packaging module 3a having an anti-oxidation layer 36; a first anti-adhesion layer 44, which is formed on the mold 41, and the first anti-adhesion layer 44 is between the mold 41 and the anti-oxidation layer 36 of the packaging module 3a; and a punch 43, which performs a punching or cutting operation on the packaging module 3a having the anti-oxidation layer 36 on the mold 41 on which the first anti-adhesion layer 44 is formed, so as to obtain a punched or cut electronic package 3.

[0073] In one embodiment, the mold 41 may have at least one concave portion 42 , and the package module 3 a having the anti-oxidation layer 36 may be disposed at the concave portion 42 of the mold 41 .

[0074] In one embodiment, the die 41 and the punch 43 are made of metal material.

[0075] In one embodiment, the anti-oxidation layer 36 of the packaging module 3 a is a tin layer.

[0076] In one embodiment, the first anti-sticking layer 44 is a diamond-like film or diamond-like carbon, and the friction coefficient of the diamond-like film or diamond-like carbon is 0.1 μm±10%.

[0077] In one embodiment, the first anti-adhesion layer 44 is a diamond-like film or diamond-like carbon, and the hardness of the diamond-like film or diamond-like carbon is 60 GPa±10%.

[0078] In one embodiment, the first anti-adhesion layer 44 is a diamond-like film or diamond-like carbon, and the scratch resistance of the diamond-like film or diamond-like carbon is greater than or equal to 30N.

[0079] In one embodiment, the punch 43 may correspond to the mold 41 on which the first anti-adhesion layer 44 is formed, so that the packaging module 3 a having the anti-oxidation layer 36 is located between the mold 41 and the punch 43 .

[0080] In one embodiment, the mold structure 4 may include a second anti-adhesion layer 45 formed on the punch 43 , and the second anti-adhesion layer 45 is located between the punch 43 and the anti-oxidation layer 36 of the packaging module 3 a .

[0081] In one embodiment, the second anti-adhesion layer 45 is a diamond-like film or diamond-like carbon.

[0082] Therefore, the mold structure 4 and the method for manufacturing the electronic package 3 of the present application have at least the following characteristics, advantages or technical effects.

[0083] 1. The present application can utilize the first anti-adhesion layer 44 (such as diamond-like film or diamond-like carbon) between the mold 41 of the mold structure 4 and the anti-oxidation layer 36 (such as tin layer) of the electronic package 3 (packaging module 3a) to protect the electronic package 3, so that the anti-oxidation layer 36 (such as tin layer) can greatly reduce or not easily produce peeling materials to remain on the mold 41 of the mold structure 4, thereby avoiding or reducing the adverse effects such as crushing or rupture of the electronic package 3.

[0084] Second, the present application can utilize a second anti-adhesion layer 45 (such as a diamond-like film or diamond-like carbon) between the punch 43 of the mold structure 4 and the anti-oxidation layer 36 (such as a tin layer) of the electronic package 3 to protect the electronic package 3, so that the anti-oxidation layer 36 (such as a tin layer) is greatly reduced or it is not easy to produce peeling materials to remain on the punch 43 of the mold structure 4, thereby avoiding or reducing adverse effects such as crushing or rupture of the electronic package 3.

[0085] 3. The present application can make good use of the properties of the first anti-adhesion layer 44 and the second anti-adhesion layer 45, such as diamond-like film or diamond-like carbon, to avoid or reduce the possible peeling of the anti-oxidation layer 36 (such as a tin layer) and the adverse effects such as crushing or rupture of the electronic package 3. For example, diamond-like film or diamond-like carbon has the properties of anti-adhesion and high life. The friction coefficient of diamond-like film or diamond-like carbon is about 0.1μm±10% and has good anti-adhesion. The hardness of diamond-like film or diamond-like carbon is about 60Gpa±10% and has a long life. At the same time, when the coating or plating temperature of diamond-like film or diamond-like carbon is less than 150 degrees Celsius, it will not affect the properties of the mold 41 and the punch 43 (metal parts) of the mold structure 4, and the scratch resistance of diamond-like film or diamond-like carbon can reach 30N and is not easy to peel off.

[0086] 4. The present application can adopt coating or plating methods to form a first anti-adhesion layer 44 (such as diamond-like film or diamond-like carbon) between the mold 41 of the mold structure 4 and the anti-oxidation layer 36 (such as tin layer) of the electronic package 3, and form a second anti-adhesion layer 45 (such as diamond-like film or diamond-like carbon) between the punch 43 of the mold structure 4 and the anti-oxidation layer 36 (such as tin layer) of the electronic package 3. Therefore, in addition to maintaining the punching (cutting) function of the mold 41 and the punch 43 of the mold structure 4, the present application can also have the physical properties of the first anti-adhesion layer 44 and the second anti-adhesion layer 45 (such as diamond-like film or diamond-like carbon) such as long life and high temperature resistance, and can also make good use of the anti-adhesion properties of the first anti-adhesion layer 44 and the second anti-adhesion layer 45 (such as diamond-like film or diamond-like carbon) to avoid or greatly reduce the adhesion of the anti-oxidation layer 36 (such as a tin layer) to the mold structure 4, thereby causing abnormalities or adverse effects on the electronic package 3.

[0087] 5. The lead frame 33 of the electronic package 3 of the present application may have a plurality of lead pins 35 (or a seat 34 in addition), and an anti-oxidation layer 36 (such as a tin layer) may be formed on the plurality of lead pins 35 (seat 34) of the lead frame 33 to effectively prevent the plurality of lead pins 35 (seat 34) of the lead frame 33 from being oxidized by the anti-oxidation layer 36 (such as a tin layer).

[0088] The above embodiments are only used to illustrate the principles and effects of the present application, and are not used to limit the present application. Any person skilled in the art may modify the above embodiments without violating the spirit and scope of the present application. Therefore, the scope of protection of the present application should be as set forth in the claims.

Claims

1. A mold structure, It is characterized in that include: A mold for arranging at least one packaging module having an anti-oxidation layer; a first anti-adhesion layer formed on the mold, and the first anti-adhesion layer is between the mold and the anti-oxidation layer of the packaging module; and A punch is used to punch or cut the packaging module with the anti-oxidation layer on the mold formed with the first anti-adhesion layer to obtain a punched or cut electronic packaging component.

2. The mold structure according to claim 1, It is characterized in that The mold has at least one concave portion, and the packaging module with the anti-oxidation layer is arranged at the concave portion of the mold.

3. The mold structure according to claim 1, It is characterized in that The mold and the punch are made of metal materials, and the anti-oxidation layer of the packaging module is a tin layer.

4. The mold structure according to claim 1, It is characterized in that The first anti-adhesion layer is a diamond-like film or diamond-like carbon.

5. The mold structure according to claim 4, It is characterized in that The friction coefficient of the diamond-like film or diamond-like carbon is 0.1 μm±10%.

6. The mold structure according to claim 4, It is characterized in that The hardness of the diamond-like film or diamond-like carbon is 60 GPa±10%.

7. The mold structure according to claim 4, It is characterized in that The anti-scratch force of the diamond-like film or diamond-like carbon is greater than or equal to 30N.

8. The mold structure according to claim 1, It is characterized in that The punch corresponds to the mold on which the first anti-adhesion layer has been formed, so that the packaging module with the anti-oxidation layer is located between the mold and the punch.

9. The mold structure according to claim 1, It is characterized in that The structure also includes a second anti-adhesion layer formed on the punch, and the second anti-adhesion layer is between the punch and the anti-oxidation layer of the packaging module.

10. The mold structure according to claim 9, It is characterized in that The second anti-adhesion layer is a diamond-like film or diamond-like carbon.