Reaction chamber and epitaxial growth equipment

Abstract

The utility model provides a reaction chamber and epitaxial growth equipment. The reaction chamber comprises a quartz cavity and an exhaust port for exhausting reaction tail gas; the exhaust mechanism is communicated with the quartz cavity through the exhaust port; the exhaust mechanism comprises a guide plate, an exhaust groove and an exhaust pipeline; the guide plate comprises a first opening and a second opening which are communicated with each other, and the first opening is opposite to the exhaust port; the exhaust groove comprises a third opening and a connecting hole, the second opening and the third opening are oppositely arranged, and the exhaust pipeline is communicated with the exhaust groove through the connecting hole. The exhaust mechanism provided by the utility model is simple in structure, can reduce the resistance during gas flowing, enables the gas flow to flow more stably, reduces turbulent flow and backflow formed when the gas flow is exhausted out of the quartz cavity, improves the uniformity of a deposited film, reduces the particle pollution probability of the cavity, reduces the maintenance frequency of the quartz cavity, and improves the productivity.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor equipment, in particular to a reaction chamber and epitaxial growth equipment. Background Art

[0002] Epitaxial deposition is a technology that uses a mixture of gases to produce a chemical reaction on the surface of a wafer, thereby generating a thin film on the surface of the wafer. Among them, silicon epitaxial deposition can grow a single-crystal silicon film with a certain thickness, a certain resistivity and different conductivity types on a single-crystal silicon substrate along the original crystal direction. Following Moore's Law, the size of semiconductor devices is shrinking and the integration is increasing, which puts higher and higher requirements on the uniformity of silicon epitaxial films.

[0003] Epitaxial deposition is carried out in a closed chamber. At a certain process temperature, the thickness of the epitaxial layer and the doping uniformity are mainly affected by factors such as process gas flow rate, gas flow uniformity and stability. Figure 1 The reaction chamber for preparing silicon epitaxial thin film in the prior art is shown, which includes a quartz chamber 1' and an exhaust mechanism 2'. Figure 1 There is an obvious wall deposition gathering area (in the dotted box shown), that is, a film of a certain thickness grows on the inner wall of the tail of the quartz cavity 1'. If the film thickness in the wall deposition area is thicker, the cavity needs to be maintained before use to prevent the film from falling into the cavity and affecting the quality of the epitaxial layer. Frequent maintenance of the quartz cavity 1' affects the production line capacity. And it has been found through research that the fluid velocity distribution at the exhaust port of the existing quartz cavity 1' is uneven, which will produce strong airflow reflux and turbulence, and then lead to unstable gas flow in the cavity. The gas reflux will also roll up the particulate contaminants remaining in the cavity and scatter them inside the chamber. During the deposition process, the particulate matter will contaminate the surface of the wafer, seriously affecting the quality of the epitaxial layer, and increasing the probability of chamber wall deposition. Therefore, it is crucial to design an appropriate chamber exhaust structure, improve the process gas flow path, and achieve uniform airflow for the uniformity of epitaxial film deposition. Utility Model Content

[0004] In view of the problems in the prior art, the purpose of the utility model is to provide a reaction chamber and epitaxial growth equipment, improve the flow path of process gas, reduce the backflow and turbulence generated during gas flow, reduce the wall deposition at the tail of the quartz chamber, reduce the maintenance frequency of the quartz chamber, and improve production capacity.

[0005] The present invention provides a reaction chamber, comprising:

[0006] The quartz cavity comprises an exhaust port for exhausting the reaction tail gas out of the quartz cavity;

[0007] An exhaust mechanism is connected to the quartz cavity through the exhaust port; the exhaust mechanism includes a guide plate, an exhaust groove and an exhaust pipe; the guide plate includes a first opening and a second opening that are connected, and the first opening is arranged opposite to the exhaust port;

[0008] The exhaust groove comprises a third opening and a connecting hole, the second opening is arranged opposite to the third opening, and the exhaust duct is connected to the exhaust groove through the connecting hole.

[0009] In some embodiments, the guide plate includes a first side surface disposed opposite to the first opening, and a second side surface disposed opposite to the second opening.

[0010] In some embodiments, the first side surface is connected to the second side surface by a rounded corner.

[0011] In some embodiments, the first side surface is a flat surface or a curved surface.

[0012] In some embodiments, a cross section of the guide plate along the first direction is rectangular.

[0013] In some embodiments, a cross-section of the exhaust groove along the first direction is a triangle.

[0014] In some embodiments, the first opening has the same shape as the second opening, and the second opening has the same shape as the third opening.

[0015] In some embodiments, a carrier is further included for placing a wafer, and the carrier is placed in the quartz chamber.

[0016] In some embodiments, the quartz chamber further includes a gas inlet for introducing reaction gas.

[0017] An embodiment of the utility model further provides an epitaxial growth device, comprising a reaction chamber as described in any one of the above items.

[0018] The reaction chamber and epitaxial growth equipment provided by the utility model have the following advantages:

[0019] The reaction chamber provided by the utility model includes a quartz cavity, including an exhaust port for exhausting reaction tail gas; an exhaust mechanism, which is connected to the quartz cavity through the exhaust port; the exhaust mechanism includes a guide plate, an exhaust groove and an exhaust pipe; the guide plate includes a first opening and a second opening that are connected, and the first opening is arranged opposite to the exhaust port; the exhaust groove includes a third opening and a connecting hole, and the second opening is arranged opposite to the third opening, and the exhaust pipe is connected to the exhaust groove through the connecting hole. The exhaust mechanism provided by the utility model has a simple structure, can reduce the resistance of gas flow, make the airflow flow more stable, reduce the turbulence and backflow formed when the airflow is discharged from the quartz cavity, improve the uniformity of the deposited film, and reduce the probability of cavity particle contamination. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Other features, objectives and advantages of the present invention will become more apparent by reading the detailed description of non-limiting embodiments made with reference to the following drawings.

[0021] Figure 1 is a cross-sectional view of a reaction chamber in the prior art;

[0022] Figure 2 It is a schematic diagram of a reaction chamber provided in one embodiment of the utility model;

[0023] Figure 3 yes Figure 2 An enlarged schematic diagram of the exhaust mechanism shown in the middle circle;

[0024] Figure 4 yes Figure 2 A side view of the exhaust mechanism shown in the middle circle;

[0025] Figure 5 It is a three-dimensional diagram of a guide plate of an exhaust mechanism provided by an embodiment of the utility model;

[0026] Figure 6 yes Figure 5 A cross-sectional view of the guide plate in a first direction;

[0027] Figure 7 yes Figure 5 A cross-sectional view of the guide plate taken along the section line AA;

[0028] Figure 8 It is a three-dimensional diagram of an exhaust slot provided by an embodiment of the utility model;

[0029] Fig. 9 yes Figure 8 A cross-sectional view of the exhaust groove in a first direction;

[0030] Fig.10 yes Figure 8 A cross-sectional view of the exhaust groove taken along section line BB.

[0031] Reference numerals:

[0032] 1 Quartz chamber

[0033] 11 Exhaust port

[0034] 2 Exhaust mechanism

[0035] 21 Deflector

[0036] 211 First Opening

[0037] 212 Second Opening

[0038] 21a First side

[0039] 21b Second side

[0040] 22 Exhaust slot

[0041] 221 The Third Opening

[0042] 222 Connection hole

[0043] 22a First triangle side

[0044] 22b Second triangle side

[0045] 22c First slope

[0046] 22d Second slope

[0047] 23 Exhaust duct

[0048] 3 Loading tray DETAILED DESCRIPTION

[0049] Example embodiments will now be described more fully with reference to the accompanying drawings. However, example embodiments can be implemented in a variety of forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that the present invention will be comprehensive and complete and fully convey the concepts of the example embodiments to those skilled in the art. In the figures, the same reference numerals represent the same or similar structures, and thus their repeated description will be omitted. "or" and "or" in the specification may both mean "and" or "or".

[0050] In the representations of the present application, the representations with reference to the terms "one embodiment", "some embodiments", "examples", "specific examples", or "some examples" etc. mean that the specific features, structures, materials or characteristics represented in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. Moreover, the represented specific features, structures, materials or characteristics may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples represented in the present application and the features of the different embodiments or examples, unless they contradict each other.

[0051] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the representation of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0052] It should be further understood that the terms "comprises" and "includes" indicate the presence of features, steps, operations, elements, components, items, kinds, and / or groups, but do not exclude the presence, occurrence, or addition of one or more other features, steps, operations, elements, components, items, kinds, and / or groups. The terms "or" and "and / or" used herein are interpreted as inclusive, or mean any one or any combination. Therefore, "A, B or C" or "A, B and / or C" means "any of the following: A; B; C; A and B; A and C; B and C; A, B and C". Exceptions to this definition will only occur when the combination of elements, functions, steps or operations is inherently mutually exclusive in some way.

[0053] like Figure 2 As shown, in order to solve the problems in the prior art, the utility model provides a reaction chamber, including a quartz chamber 1 and an exhaust mechanism 2.

[0054] The quartz cavity 1 includes an exhaust port 11 for discharging reaction exhaust gas from the quartz cavity 1; the exhaust mechanism 2 is connected to the quartz cavity 1 through the exhaust port 11; the exhaust mechanism 2 includes a guide plate 21, an exhaust groove 22 and an exhaust pipe 23; the guide plate 21 includes a first opening 211 and a second opening 212 that are connected, and the first opening 211 is arranged opposite to the exhaust port 11; the exhaust groove 22 includes a third opening 221 and a connecting hole 222, the second opening 212 is arranged opposite to the third opening 221, and the exhaust pipe 23 is connected to the exhaust groove 22 through the connecting hole 222.

[0055] The exhaust mechanism of the utility model has a simple structure, can reduce the resistance during gas flow, make the airflow flow more stable, reduce the turbulence and backflow formed when the airflow is discharged from the quartz cavity, improve the uniformity of the deposited film, reduce the probability of cavity particle contamination, reduce the probability of wall deposition at the tail of the quartz cavity, reduce the maintenance frequency of the quartz cavity, and improve production capacity.

[0056] like Figures 3 to 7 As shown, the guide plate 21 includes a first side surface 21a arranged opposite to the first opening 211, and a second side surface 21b arranged opposite to the second opening 212, wherein the first side surface 21a and the second side surface 21b are connected by a rounded corner. The guide plate 21 can guide the gas to flow along a specific path to ensure the flow direction of the process gas; the rounded corners are arranged in the guide plate 21 to reduce the resistance and friction encountered by the gas flow, reduce the vortex generated by the gas flow in the exhaust structure, provide the stability of the gas flow, reduce the gas flow backflow and vortex, and reduce the uneven wall deposition at the tail of the quartz cavity.

[0057] In this embodiment, the first side surface 21a is a plane. In another embodiment, the first side surface 21a may be a curved surface.

[0058] like Figure 5 and Figure 6 As shown, the cross section of the guide plate 21 along the first direction is a rectangle. Here, the first direction is the direction in which the guide plate 21 is parallel to the exhaust port 11.

[0059] like Figures 8 to 10 As shown, the cross section of the exhaust groove 22 along the first direction is a triangle. In this embodiment, the exhaust groove 22 includes a first triangular side surface 22a and a second triangular side surface 22b that are arranged oppositely and in parallel, and a first inclined surface 22c and a second inclined surface 22d disposed between the first triangular side surface 22a and the second triangular side surface 22b. The inclined surface in the exhaust groove 22 is arranged to guide the airflow to the exhaust duct 23.

[0060] The exhaust groove 22 has a certain space, which can make the residual process gas stay in the exhaust groove 22, avoid the residual process gas staying in the quartz chamber 1, form a buffer zone, and further improve the exhaust stability.

[0061] like Figure 5 and Figure 8 As shown, the first opening 211 and the second opening 212 have the same shape, and the second opening 212 and the third opening 221 have the same shape, but the present invention is not limited thereto.

[0062] like Figure 2As shown, the reaction chamber also includes a carrier plate 3 for placing wafers, and the carrier plate 3 is placed in the quartz cavity 1. The quartz cavity 1 also includes an air inlet (not shown in the figure) for introducing reaction gas. When epitaxial thin film deposition is performed, the reaction gas is introduced into the quartz cavity 1 through the air inlet, and the reaction exhaust gas is discharged through the exhaust port 11.

[0063] In some embodiments, the reaction chamber further includes a heating device (not shown in the figure), which can be a resistive thermal radiation heating device, and is composed of an upper resistive heating plate and a lower resistive heating plate. The upper resistive heating plate and the lower resistive heating plate are located on the upper and lower sides of the quartz cavity 1 to uniformly heat the process chamber.

[0064] The resistor of the resistance heating device is selected from materials that heat up quickly, are resistant to high temperatures, and are not easy to deform, including tungsten, molybdenum, chromium-nickel alloy, etc.

[0065] The utility model also provides an epitaxial growth device, comprising the reaction chamber as described above.

[0066] The epitaxial growth equipment provided by the embodiment of the utility model can reduce the resistance of gas flow by adopting the above reaction chamber provided by the above embodiments of the utility model, make the gas flow more stable, reduce the turbulence and backflow formed when the gas is discharged from the quartz cavity, improve the uniformity of the deposited film, reduce the probability of cavity particle contamination, reduce the probability of wall deposition at the tail of the quartz cavity, reduce the maintenance frequency of the quartz cavity, and improve the production capacity. By improving the exhaust structure of the quartz cavity, the process gas flow dynamics are improved to reduce the backflow or turbulence of the process gas in the quartz cavity, thereby reducing the deposition of single crystal silicon on the quartz cavity wall.

[0067] The reaction chamber and epitaxial growth equipment provided by the utility model have the following advantages:

[0068] The reaction chamber provided by the utility model includes a quartz cavity, including an exhaust port for discharging process exhaust gas; an exhaust mechanism, which is connected to the quartz cavity through the exhaust port; the exhaust mechanism includes a guide plate, an exhaust groove and an exhaust pipe; the guide plate includes a first opening and a second opening that are connected, and the first opening is arranged opposite to the exhaust port; the exhaust groove includes a third opening and a connecting hole, and the second opening is arranged opposite to the third opening, and the exhaust pipe is connected to the exhaust groove through the connecting hole. The exhaust mechanism provided by the utility model has a simple structure, can reduce the resistance during gas flow, make the gas flow more stable, reduce the turbulence and backflow formed when the gas is discharged from the quartz cavity, improve the uniformity of the deposited film, reduce the probability of cavity particle contamination, reduce the maintenance frequency of the quartz cavity, and improve production capacity.

[0069] The above contents are further detailed descriptions of the present invention in combination with specific preferred implementations, and the specific implementation of the present invention cannot be considered to be limited to these descriptions. For ordinary technicians in the technical field to which the present invention belongs, several simple deductions or substitutions can be made without departing from the concept of the present invention, which should be regarded as falling within the protection scope of the present invention.

Claims

1. A reaction chamber, characterized in that: include: The quartz cavity comprises an exhaust port, wherein the exhaust port is used to discharge the reaction tail gas out of the quartz cavity; An exhaust mechanism is connected to the quartz cavity through the exhaust port; the exhaust mechanism includes a guide plate, an exhaust groove and an exhaust pipe; the guide plate includes a first opening and a second opening that are connected, and the first opening is arranged opposite to the exhaust port; The exhaust groove comprises a third opening and a connecting hole, the second opening is arranged opposite to the third opening, and the exhaust duct is connected to the exhaust groove through the connecting hole.

2. The reaction chamber according to claim 1, characterized in that: The guide plate includes a first side surface arranged opposite to the first opening, and a second side surface arranged opposite to the second opening.

3. The reaction chamber according to claim 2, characterized in that: The first side surface is connected to the second side surface through a rounded corner.

4. The reaction chamber according to claim 3, characterized in that: The first side surface is a flat surface or a curved surface.

5. The reaction chamber according to claim 4, characterized in that: The cross section of the guide plate along the first direction is rectangular.

6. The reaction chamber according to claim 5, characterized in that: A cross section of the exhaust groove along the first direction is a triangle.

7. The reaction chamber according to claim 6, characterized in that: The first opening has the same shape as the second opening, and the second opening has the same shape as the third opening.

8. The reaction chamber according to claim 1, characterized in that: It also includes a carrier plate for placing wafers, and the carrier plate is placed in the quartz cavity.

9. The reaction chamber according to claim 1, characterized in that: The quartz cavity also includes a gas inlet for introducing reaction gas.

10. An epitaxial growth device, characterized in that: Comprising the reaction chamber according to any one of claims 1 to 9.

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