Target material

Abstract

The utility model belongs to the technical field of physical vapor deposition, and discloses a target material which comprises a first step and a second step, the first step and the second step are integrally formed, connected pattern groups are arranged on the first step and the second step and comprise first patterns and second patterns, the first patterns are arranged on the side face of the first step, and the second patterns are arranged on the side face of the second step. The second pattern is arranged on the surface of the second step, the first pattern is connected with the second pattern, the first pattern is formed by connecting a plurality of protruding parts, the protruding parts are provided with sharp corners, and the second pattern and the first pattern are identical in structure. According to the target material disclosed by the utility model, the accumulation quantity of anti-sputtering substances at the edge of the target material can be increased, the falling of the anti-sputtering substances can be delayed, and the utilization rate of the target material can be increased and the waste of the target material can be reduced while the semiconductor coating quality is ensured.

Description

Technical Field

[0001] The utility model relates to the technical field of physical vapor deposition, in particular to a target material. Background Art

[0002] During the semiconductor manufacturing process, the semiconductor surface needs to be coated to ensure the semiconductor's performance and service life. Existing semiconductor coating methods mainly include physical vapor deposition (PVD) and chemical vapor deposition (CVD). PVD is widely used in semiconductor coating because it has the advantages of simple technical processes, no pollution to the environment, uniform film formation, low consumables, and strong bonding with the coated product. PVD methods mainly include magnetron sputtering, ion plating, and vacuum thermal evaporation. Both magnetron sputtering and ion plating require a target material as a sputtering source.

[0003] During the film formation process, the target material and semiconductor device are placed in the vacuum chamber of the coating equipment. The coating equipment emits high-speed nuclear particles to bombard the target material. The metal particles in the target material break away from the target material and become free particles. The free particles then migrate to the surface of the semiconductor and condense into a film. However, a small portion of the sputtered free particles still deposit on the surface of the target material under the influence of the magnetic field. These free particles deposited on the surface of the target material edge are called anti-sputtering material. As the surface of the target material edge is sputtered repeatedly, the anti-sputtering material will form a deposit. When the anti-sputtering material accumulates to a certain thickness, it will fall off and form abnormally attached particles on the surface of the semiconductor, affecting the film quality and performance of the semiconductor.

[0004] At the same time, after the anti-sputtering material accumulates for a certain period of time, it will fall off the target material. When the anti-sputtering material cannot adhere to the surface of the target material, the target material cannot be used. However, at this time, only a very thin layer of the target material is consumed, and most of the remaining target material cannot be used anymore and can only be recycled as residual targets, resulting in low efficiency in the use of the target material and a lot of waste.

[0005] Therefore, there is an urgent need for a target material to solve the above technical problems. Utility Model Content

[0006] The purpose of the utility model is to provide a target material that can increase the amount of accumulated anti-sputtering material at the edge of the target material, delay the shedding of the anti-sputtering material, ensure the quality of semiconductor coating, and at the same time improve the utilization rate of the target material and reduce the waste of the target material.

[0007] To achieve this purpose, the present invention adopts the following technical solutions:

[0008] A target material includes: a first step and a second step, the first step and the second step are integrally formed, the first step and the second step are provided with a connected pattern group, the pattern group includes a first pattern and a second pattern, the first pattern is provided on the side of the first step, the second pattern is provided on the surface of the second step, the first pattern is connected to the second pattern, the first pattern is formed by connecting a plurality of protrusions, the protrusions have sharp corners, and the second pattern has the same structure as the first pattern.

[0009] As a preferred technical solution for the target material, the target material is provided with a plurality of the pattern groups, and the plurality of the pattern groups are arranged at intervals.

[0010] As a preferred technical solution for the target material, the angle of the sharp corner is 30°-60°.

[0011] As a preferred technical solution for the target material, the protrusion is in the shape of a triangle.

[0012] As a preferred technical solution for the target material, the height of the protrusion is 2mm-3mm.

[0013] As a preferred technical solution for the target material, the first step and the second step are both cylindrical in shape.

[0014] As a preferred technical solution for the target material, the thickness of the first step is 6mm-12mm;

[0015] And / or, the thickness of the second step is 8-13 mm.

[0016] As a preferred technical solution of the target material, the target material further includes a sealing groove, and the sealing groove is placed on the surface of the second step.

[0017] As a preferred technical solution for the target material, a plurality of sealing grooves are provided, and the plurality of sealing grooves are arranged at intervals.

[0018] As a preferred technical solution for the target material, the target material is made of titanium or tantalum.

[0019] The beneficial effects of the utility model are:

[0020] The target material provided by the present invention includes a first step and a second step, and the first step and the second step are integrally formed, which not only makes it easier for workers to process the target material, but also reduces the difficulty of processing the target material by workers and improves the processing accuracy of the target material. A pattern group is provided at the place where the first step and the second step are connected, wherein the pattern group includes a first pattern and a second pattern, the first pattern is provided on the side of the first step, and the second pattern is provided on the upper surface of the second step, and the first pattern and the second pattern are interconnected. The arrangement of the first pattern and the second pattern can increase the roughness of the target surface, thereby increasing the friction between the anti-sputtering material and the target surface, which can not only reduce the risk of the anti-sputtering material falling off on the target surface, but also improve the coating quality of the semiconductor. At the same time, the target surface can also carry more anti-sputtering material, delaying the falling off of the anti-sputtering material, extending the service life of the target material, thereby improving the use efficiency of the target material and reducing the waste of the target material. The first pattern is formed by connecting multiple protrusions, each of which has a sharp corner. The structure of the second pattern is consistent with that of the first pattern. The sharp corner can be inserted into the interior of the anti-sputtering material, so that the anti-sputtering material can be more stably attached to the target material, thereby increasing the target material surface's carrying capacity for the anti-sputtering material and extending the target material's service life. At the same time, since the sharp corner has destroyed the internal structure of the anti-sputtering material, it can also reduce the particle size formed after the anti-sputtering material falls off, thereby further improving the semiconductor coating quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 It is a structural schematic diagram of the target material provided by the utility model.

[0022] In the picture:

[0023] 1. The first step;

[0024] 2. The second step;

[0025] 3. Pattern group; 31. First pattern; 310. Protrusion; 32. Second pattern;

[0026] 4. Sealing groove. DETAILED DESCRIPTION

[0027] The present invention will be further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are intended only to illustrate the present invention and are not intended to limit the present invention. It should also be noted that, for ease of description, the accompanying drawings only illustrate portions relevant to the present invention, not all of its components.

[0028] In the description of this utility model, unless otherwise specified or limited, the terms "connected," "connect," and "fixed" should be understood in a broad sense. For example, they can refer to fixed connection, detachable connection, or integration; mechanical connection or electrical connection; direct connection or indirect connection through an intermediate medium; internal communication between two components or interaction between two components. Those skilled in the art will understand the specific meanings of the above terms in this utility model based on the specific circumstances.

[0029] In the present invention, unless otherwise expressly specified or limited, a first feature being "above" or "below" a second feature may include the first and second features being in direct contact, or may include the first and second features being in contact not directly but through another feature between them. Moreover, a first feature being "above," "above," and "above" a second feature may include the first feature being directly above or obliquely above the second feature, or may simply mean that the first feature is higher in level than the second feature. A first feature being "below," "below," and "below" a second feature may include the first feature being directly below or obliquely below the second feature, or may simply mean that the first feature is lower in level than the second feature.

[0030] In the description of this embodiment, the terms "upper," "lower," "right," and other orientations or positional relationships are based on the orientations or positional relationships shown in the accompanying drawings and are intended solely for ease of description and simplified operation. They do not indicate or imply that the devices or components referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on the present invention. Furthermore, the terms "first" and "second" are used solely for descriptive purposes and have no special meaning.

[0031] This embodiment provides a target material that can solve the problems of uneven semiconductor coating, low target material utilization, and large-scale target material waste in the prior art.

[0032] like Figure 1As shown, this embodiment provides a target material, including a first step 1 and a second step 2. The first step 1 and the second step 2 are integrally formed, which not only makes it easier for workers to process the target material, but also reduces the difficulty of processing the target material for workers and improves the processing accuracy of the target material. A connected pattern group 3 is provided on the first step 1 and the second step 2, wherein the pattern group 3 includes a first pattern 31 and a second pattern 32. The first pattern 31 is provided on the side of the first step 1, and the second pattern 32 is provided on the upper surface of the second step 2. The first pattern 31 and the second pattern 32 are interconnected. The provision of the first pattern 31 and the second pattern 32 can increase the roughness of the target material surface, thereby increasing the friction between the anti-sputtering material and the target material surface, which can not only reduce the risk of anti-sputtering material falling off on the target material surface, but also improve the coating quality of the semiconductor. At the same time, the target material surface can also carry more anti-sputtering material, delaying the falling off of the anti-sputtering material, extending the service life of the target material, thereby improving the use efficiency of the target material and reducing the waste of the target material. The first pattern 31 is formed by connecting multiple protrusions 310, and the protrusions 310 have sharp corners. The structure of the second pattern 32 is consistent with that of the first pattern 31. The sharp corners can be inserted into the interior of the anti-sputtering material, so that the anti-sputtering material can be more stably attached to the target material, thereby increasing the target material surface's carrying capacity for the anti-sputtering material and extending the target material's service life. At the same time, since the sharp corners have destroyed the internal structure of the anti-sputtering material, it can also achieve the reduction of the particle size formed after the anti-sputtering material falls off, thereby further improving the semiconductor coating quality.

[0033] Preferably, the target is provided with multiple pattern groups 3. The arrangement of multiple pattern groups 3 can further enhance the roughness of the target surface, allowing the target surface to carry more anti-sputtering material, thereby extending the service life of the target, improving the target utilization rate, and further reducing target waste. To further ensure the roughness of the target surface, the multiple pattern groups 3 are arranged in sequence.

[0034] Preferably, the angle of the sharp corner is 30°-60°, which can ensure that the sharp corner can be inserted into the anti-sputtering material while reducing the degree of damage to the internal structure of the anti-sputtering material, preventing the anti-sputtering material from falling off prematurely, and improving the coating quality of the semiconductor.

[0035] In this embodiment, the protrusion 310 is triangular in shape. Compared to other shapes, the triangle shape provides a more stable overall structure and a larger contact area with the anti-sputtering material, allowing the target to carry more anti-sputtering material, thereby improving the target's utilization rate. Furthermore, the triangle shape is simpler than other shapes, which can reduce the difficulty of target processing, improve target processing efficiency and quality, and reduce target production costs.

[0036] Preferably, the height of the protrusion 310 is 1mm-2mm. In this way, while ensuring the surface roughness of the target material, it can also prevent free particles that should be attached to the surface of the semiconductor from falling on the protrusion 310, affecting the coating quality of the semiconductor and further affecting the performance of the semiconductor. The setting of the height of the protrusion 310 is related to the size difference between the first step 1 and the second step 2, and the specific setting needs to be based on the size of the first step 1 and the second step 2, and no specific restrictions are made here.

[0037] Preferably, the first step 1 and the second step 2 are both cylindrical in shape. Cylinders are easier to process than polygonal objects, thereby reducing the difficulty of target material processing and further reducing target material processing costs. Furthermore, after high-speed nuclear particles repeatedly bombard one side of the target material, the target particle surface will become uneven, affecting the magnetic field distribution within the coating equipment, thereby affecting the semiconductor coating quality and reducing the service life of the target material. By processing the first step 1 and the second step 2 of the target material into cylindrical shapes, after high-speed nuclear particles repeatedly bombard one part of the target material, the processing personnel can rotate the target material so that the high-speed nuclear particles bombard another part of the target material, thereby improving the utilization rate of the target material. Therefore, compared with other shapes, the cylindrical shape has a higher utilization rate and can relatively reduce the waste of target material. At the same time, in actual processing, the semiconductor that needs to be coated is a cylinder, so the target material is processed into a cylinder. The shape of the target material is consistent with the shape of the semiconductor, which can make the metal particles in the target material fall more evenly on the surface of the semiconductor and form a film evenly. Of course, in actual processing, the shape of the target material can also be selected according to the shape of the semiconductor that needs to be coated, and there is no specific restriction.

[0038] Preferably, the thickness of the first step 1 is 6 mm to 12 mm; and / or the thickness of the second step 2 is 8 mm to 13 mm. The thickness of the first step 1 and the thickness of the second step 2 are determined according to specific processing requirements and are not specifically limited.

[0039] In this embodiment, the target is further provided with a sealing groove 4, which is arranged on the upper surface of the second step 2. Since the upper surface of the second step 2 is at the edge of the target, it will not significantly affect the overall shape of the target, and thus will not affect the utilization rate of the target. At the same time, since the target and semiconductor will be placed in the vacuum chamber of the coating equipment, the provision of the sealing groove 4 enables a closer connection between the target and the component that fixes the target in the coating equipment, thereby exhausting more air from the chamber and further improving the coating quality of the semiconductor. To ensure the stability of the target placement, it is preferred to provide multiple sealing grooves 4 on the upper surface of the second step 2.

[0040] In this embodiment, the target material is titanium or tantalum. Metal targets are cheaper than targets made of other materials, and titanium and tantalum targets are more corrosion-resistant and can provide better protection for semiconductors.

[0041] Obviously, the above-described embodiments of the present invention are merely examples for the purpose of clearly illustrating the present invention and are not intended to limit the manner in which the present invention is to be implemented. A person skilled in the art would be able to make various obvious changes, readjustments, and substitutions without departing from the scope of protection of the present invention. It is not necessary and impossible to provide an exhaustive list of all possible embodiments. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention shall be included within the scope of protection of the claims of the present invention.

Claims

1. A target material, characterized in that: include: A first step (1) and a second step (2), wherein the first step (1) and the second step (2) are integrally formed, the first step (1) and the second step (2) are provided with a connected pattern group (3), the pattern group (3) comprising a first pattern (31) and a second pattern (32), the first pattern (31) being provided on a side surface of the first step (1), the second pattern (32) being provided on an upper surface of the second step (2), the first pattern (31) being connected to the second pattern (32), the first pattern (31) being formed by connecting a plurality of protrusions (310), the protrusions (310) having sharp corners, and the second pattern (32) having the same structure as the first pattern (31).

2. The target material according to claim 1, characterized in that The target material is provided with a plurality of the pattern groups (3), and the plurality of the pattern groups (3) are arranged at intervals.

3. The target material according to claim 1, characterized in that The angle of the sharp corner is 30°-60°.

4. The target material according to claim 1, characterized in that The protrusion (310) is in the shape of a triangle.

5. The target material according to claim 4, characterized in that The height of the protrusion (310) is 2 mm-3 mm.

6. The target material according to claim 1, characterized in that The first step (1) and the second step (2) are both cylindrical in shape.

7. The target material according to claim 1, characterized in that The thickness of the first step (1) is 6 mm to 12 mm; And / or, the thickness of the second step (2) is 8-13 mm.

8. The target material according to claim 1, characterized in that The target material further comprises a sealing groove (4), and the sealing groove (4) is disposed on the upper surface of the second step (2).

9. The target material according to claim 8, characterized in that A plurality of the sealing grooves (4) are provided, and the plurality of the sealing grooves (4) are arranged at intervals.

10. The target material according to any one of claims 1 to 9, characterized in that: The target material is made of titanium or tantalum.

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