Bearing device and chemical vapor deposition equipment

Abstract

The utility model relates to the technical field of chemical vapor deposition. The embodiment of the utility model provides a bearing device and chemical vapor deposition equipment. The reflecting piece is arranged on the periphery of the bearing piece in a surrounding mode, and the containing cavity is defined, so that the to-be-deposited target piece borne by the bearing piece can be located in the containing cavity. The reflecting part can reflect the heat radiation towards the accommodating cavity, so that the generated heat radiation for heating can be reflected to the target part to be deposited through the reflecting part in the deposition process, and the utilization rate of heat radiation energy is further improved. And meanwhile, the reflection piece also prevents the diffusion of the active reaction gas in the accommodating cavity, so that the concentration of the active reaction gas in the accommodating cavity is improved, and the deposition rate is improved. Therefore, not only is the energy consumption cost reduced, but also the production efficiency is improved.

Description

Technical Field

[0001] The present application relates to the technical field of chemical vapor deposition, and in particular to a carrier device and a chemical vapor deposition equipment. Background Art

[0002] Generally, chemical vapor deposition equipment can be used to deposit on various target parts to be deposited, and deposit thin films on the surface of the target parts. For example, chemical vapor deposition equipment can be used to deposit on the surface of a tool, and deposit diamond coatings on the surface of the tool to improve the performance and service life of the tool. In this process, there are problems of low energy utilization and active reaction gas utilization, which leads to high energy consumption costs and reduced production efficiency. Utility Model Content

[0003] Based on this, it is necessary to provide a carrier device and a chemical vapor deposition equipment to improve energy utilization and active reaction gas utilization, thereby reducing energy consumption costs and improving production efficiency.

[0004] According to one aspect of the present application, an embodiment of the present application provides a carrier device, which is used to be arranged in a processing chamber of a chemical vapor deposition device, and the carrier device includes:

[0005] A carrier, used for carrying a target object to be deposited; and

[0006] A reflector is arranged around the periphery of the carrier, and the reflector and the carrier together define a accommodating cavity. The reflector surrounds an opening connected to the accommodating cavity, and the opening is arranged opposite to the carrier; the reflector is configured to reflect heat radiation toward the accommodating cavity.

[0007] In one embodiment, the reflective member includes a substrate and a reflective layer, wherein the substrate has a first surface facing the accommodating cavity and a second surface facing away from the accommodating cavity;

[0008] Wherein, the reflective layer is provided on the first surface; or

[0009] The reflective layer is disposed on the second surface, and the substrate is configured as a transparent member.

[0010] In one of the embodiments, the surface roughness of the surface of the first surface and the second surface where the reflective layer is disposed is less than 6.3 micrometers.

[0011] In one embodiment, the target part to be deposited is a tool, and the carrier is provided with a plurality of insertion holes, and the insertion holes are used to insert the tool.

[0012] In one embodiment, the reflective layer is made of metal or alloy.

[0013] In one of the embodiments, the reflectivity of the reflective layer is greater than 50%.

[0014] In one embodiment, the melting point of the reflective layer is greater than 800°C.

[0015] In one embodiment, the material of the substrate includes fused quartz glass, high borosilicate glass or glass-ceramics.

[0016] In one of the embodiments, a surface of the reflector facing the accommodating cavity is configured as a polished mirror surface.

[0017] In one embodiment, the reflective element is made of metal or alloy.

[0018] In one embodiment, the reflective element is configured to reflect thermal radiation with a wavelength of 0.39 microns to 10 microns.

[0019] In one embodiment, the target part to be deposited is a tool, and the carrier is provided with a plurality of insertion holes, and the insertion holes are used to insert the tool.

[0020] In one embodiment, the reflector comprises a plurality of sub-reflectors, and the plurality of sub-reflectors are sequentially arranged around the periphery of the carrier;

[0021] Wherein, along the circumference of the carrier, two adjacent sub-reflectors abut against each other; or

[0022] Along the circumference of the carrier, a gap is defined between two adjacent sub-reflectors, and the gap is communicated with the accommodating cavity.

[0023] In one of the embodiments, the carrying device further includes a mounting assembly;

[0024] The installation assembly includes:

[0025] A support member connected to the peripheral side surface of the carrier member; a mounting groove for mounting the reflector is defined between the support member and the peripheral side surface of the carrier member; and

[0026] A fastener is detachably provided on the support member; the fastener is configured to fix the reflector member to the mounting groove.

[0027] According to another aspect of the present application, an embodiment of the present application provides a chemical vapor deposition device, including:

[0028] a body having a processing chamber; and

[0029] The carrying device in any of the above embodiments is arranged in the processing chamber.

[0030] In one embodiment, the chemical vapor deposition equipment further comprises a gas delivery member disposed in the processing chamber, and an output port of the gas delivery member is configured to be disposed toward the opening; and / or

[0031] The chemical vapor deposition equipment further comprises a heating element disposed in the processing chamber, the heating element being located on a side of the opening away from the carrier, the heating element being used to generate thermal radiation; and / or

[0032] The chemical vapor deposition equipment further comprises a cooling member arranged in the processing chamber, wherein the cooling member is located on a side of the carrier away from the opening.

[0033] In the above-mentioned carrier device and chemical vapor deposition equipment, the carrier device at least includes a carrier and a reflector. By surrounding the periphery of the carrier with the reflector, a receiving cavity is defined so that the target part to be deposited carried by the carrier can be located in the receiving cavity. Since the reflector can reflect thermal radiation toward the receiving cavity, the thermal radiation generated for heating during the deposition process can be reflected to the target part to be deposited via the reflector, thereby improving the utilization rate of the thermal radiation energy. At the same time, the reflector also hinders the diffusion of the active reaction gas in the receiving cavity, thereby increasing the concentration of the active reaction gas in the receiving cavity and improving the deposition rate. As a result, not only the energy consumption cost is reduced, but also the production efficiency is improved.

[0034] Additional aspects and advantages of the embodiments of the present application will be given in part in the description below, and in part will become apparent from the description below, or will be learned through the practice of the embodiments of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Various other advantages and benefits will become apparent to those of ordinary skill in the art by reading the detailed description of the preferred embodiments below. The accompanying drawings are only for the purpose of illustrating the preferred embodiments and are not to be considered as limiting the present application. Moreover, the same reference numerals are used throughout the drawings to represent the same components. In the drawings:

[0036] Figure 1 This is a schematic diagram of the three-dimensional structure of a carrying device in one embodiment of the present application;

[0037] Figure 2 for Figure 1 A schematic top view of the illustrated carrying device;

[0038] Figure 3 for Figure 2 Schematic diagram of the cross-sectional structure with the cross-sectional direction being AA;

[0039] Figure 4 This is a schematic diagram of the three-dimensional structure of a carrying device in one embodiment of the present application;

[0040] Figure 5 for Figure 1 A schematic diagram of the side structure of the carrying device is shown;

[0041] Figure 6 for Figure 1 A schematic diagram of a three-dimensional structure in which a supporting device is coordinated with a heating element, a cooling element, and a gas transmission element.

[0042] Description of reference numerals:

[0043] Carrying device 100;

[0044] Carrier 110, target T, socket j;

[0045] Reflector 120, substrate 120a, first surface m1, second surface m2, reflective layer 120b, sub-reflector 121, gap x;

[0046] Mounting assembly 130, support member 131, fastener 132, connector 133;

[0047] Gas delivery parts 200;

[0048] Heating element 300;

[0049] Cooling element 400;

[0050] Accommodating cavity Q, opening k, mounting groove a;

[0051] The first direction F1, the second direction F2, and the third direction F3. DETAILED DESCRIPTION

[0052] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.

[0053] In the description of the present application, it should be understood that if the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. appear, the orientation or position relationship indicated by these terms is based on the orientation or position relationship shown in the accompanying drawings, which is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application.

[0054] In addition, if the terms "first" or "second" appear, these terms are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of this application, if the term "plurality" appears, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0055] In this application, unless otherwise clearly specified and limited, if the terms "installed", "connected", "connected", "fixed" and the like appear, these terms should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integrated connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to the specific circumstances.

[0056] In the present application, unless otherwise clearly specified and limited, if there is a description that a first feature is "above" or "below" a second feature, etc., or similar descriptions appear, it may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature being "above", "above" and "above" the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. The first feature being "below", "below" and "below" the second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0057] It should be noted that if an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be a central element. If an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. If any, the terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used in this application are for illustrative purposes only and do not represent the only implementation method.

[0058] Figure 1 A schematic diagram of the three-dimensional structure of a carrying device 100 in an embodiment of the present application is shown; Figure 2 Shows Figure 1 The schematic top view of the carrying device 100 is shown; for ease of explanation, only the contents related to the embodiment of the present application are shown.

[0059] Exemplarily, the first direction F1 is the height direction of the carrying device 100, the second direction F2 is the length direction of the carrying device 100, and the third direction F3 is the width direction of the carrying device 100. The first direction F1, the second direction F2 and the third direction F3 are perpendicular to each other.

[0060] Please refer to Figure 1 to Figure 2 The embodiment of the present application provides a carrier device 100 for being arranged in a processing chamber of a chemical vapor deposition device. The carrier device 100 includes a carrier 110 and a reflector 120 .

[0061] The carrier 110 is used to carry the target part T to be deposited, and mainly plays the role of carrying the target part T. The carrier 110 can be set as a plate-shaped member. Figure 1 and Figure 2 For example, the carrier 110 can be set as a rectangular plate-like component, the first direction F1 is the thickness direction of the carrier 110, the second direction F2 is the length direction of the carrier 110, and the third direction F3 is the width direction of the carrier 110. Of course, the carrier 110 can also be set as a circular or other shaped plate-like component, and the carrier 110 can also be set as a component with a certain thickness, which is not specifically limited here. The carrier 110 can be made of high temperature resistant material. It can be understood that the corresponding high temperature resistant material can be selected according to the process temperature involved in the deposition process, as long as it can meet the process requirements. Exemplarily, the material of the carrier 110 can be copper, graphite, molybdenum, tungsten or stainless steel and other materials with good high temperature resistance.

[0062] The reflector 120 is a component that can be used for reflection. Specifically, the reflector 120 is arranged around the periphery of the carrier 110. The reflector 120 and the carrier 110 together define a receiving cavity Q. The reflector 120 surrounds an opening k that communicates with the receiving cavity Q. The opening k is arranged opposite to the carrier 110. That is, the opening k and the carrier 110 are arranged opposite to each other along the first direction F1. The shape of the reflector 120 can be determined according to the periphery shape of the carrier 110. For example, Figure 1 to Figure 2 For example, the carrier 110 may be a rectangular plate-shaped member, the periphery of the carrier 110 may be roughly considered as a rectangle, and the reflector 120 may also be considered as a rectangular frame. For another example, the carrier 110 may be a circular plate-shaped member, the periphery of the carrier 110 may be roughly considered as a circle, and the reflector 120 may also be considered as a circular frame. The specific shape of the reflector 120 is not specifically limited herein.

[0063] The reflector 120 has a side surface facing the accommodating cavity Q, and a side surface facing away from the accommodating cavity Q. Accordingly, the side surface of the reflector 120 facing the accommodating cavity Q is arranged around the periphery of the carrier 110, at least part of the side surface of the reflector 120 facing the accommodating cavity Q constitutes a part of the cavity wall of the accommodating cavity Q, and the side surface of the carrier 110 facing the accommodating cavity Q constitutes another part of the cavity wall of the accommodating cavity Q. The reflector 120 is configured to be able to reflect thermal radiation toward the accommodating cavity Q. It can be understood that the thermal radiation reaching the reflector 120 includes but is not limited to thermal radiation generated by a heating source, and thermal reflection reflected from one part of the side surface of the reflector 120 facing the accommodating cavity Q to another part.

[0064] The inventors of the present application have found that whether the energy and active gas around the target part T are effectively utilized will affect the overall utilization rate of the energy and active gas. If only the carrier 110 is provided to carry the target part T, only a part of the thermal radiation energy generated by the heating source can be received, and at the same time, the active reaction gas will also diffuse and lose around the carrier 110, which will lead to a low utilization rate of the energy and active reaction gas, thereby reducing production efficiency and increasing energy consumption costs.

[0065] In the embodiment of the present application, since the reflector 120 can reflect the thermal radiation toward the receiving chamber Q, the thermal radiation generated for heating during the deposition process can be reflected to the target part T to be deposited via the reflector 120, thereby improving the utilization rate of the thermal radiation energy. At the same time, the reflector 120 also hinders the diffusion of the active reaction gas in the receiving chamber Q, thereby increasing the concentration of the active reaction gas in the receiving chamber Q and improving the deposition rate. As a result, not only the energy consumption cost is reduced, but also the production efficiency is improved.

[0066] Figure 3 Shows Figure 2The cross-sectional structure diagram is shown in the cross-sectional direction of AA; for ease of explanation, only the contents related to the embodiments of the present application are shown.

[0067] In some embodiments, please refer to Figure 1 and Figure 2 , and combined with reference Figure 3 The reflector 120 includes a substrate 120a and a reflective layer 120b. The substrate 120a is the main component of the reflector 120, which can play a supporting role and has a certain strength. The substrate 120a has a first surface m1 facing the accommodating cavity Q and a second surface m2 facing away from the accommodating cavity Q.

[0068] The reflective layer 120b may be disposed on the first surface m1. That is, the reflective layer 120b may be disposed toward the receiving cavity Q. The reflective layer 120b may reflect the thermal radiation toward the target component T located in the receiving cavity Q. Of course, the reflective layer 120b may also be disposed on the second surface m2. In this case, the substrate 120a is configured as a transparent component, so that the reflective component 120 can reflect the thermal radiation toward the receiving cavity Q.

[0069] For specific embodiments, please continue to refer to Figures 1 to 3 , the surface roughness of the surface provided with the reflective layer 120b in the first surface m1 and the second surface m2 is less than 6.3 microns. That is, when the reflective layer 120b is provided on the first surface m1 of the substrate 120a, the surface roughness of the first surface m1 of the substrate 120a is less than 6.3 microns. When the reflective layer 120b is provided on the second surface m2 of the substrate 120a, the surface roughness of the second surface m2 of the substrate 120a is less than 6.3 microns. Exemplarily, the surface roughness is 6 microns, 5.5 microns, 5 microns, 4 microns, 3.5 microns, 3 microns, 2 microns, 1.5 microns, 1 micron, 0.8 microns, 0.6 microns, 0.4 microns, 0.1 microns or 0.05 microns. It can be set accordingly according to the specific use case, and no specific limitation is made here. It can be understood that the smaller the surface roughness, the more conducive it is to set the reflective layer 120b.

[0070] For specific embodiments, please continue to refer to Figures 1 to 3 The material of the reflective layer 120b includes a metal material or an alloy material. For example, the metal material may be copper, molybdenum, silver or gold, and the alloy material may be a nickel-chromium alloy, etc. Thus, the material of the reflective layer 120b may be selected according to the use requirements, and no specific limitation is made here.

[0071] For specific embodiments, please continue to refer to Figures 1 to 3, the reflectivity of the reflective layer 120b is greater than 50%. That is, the material of the reflective layer 120b can be selected to have a reflectivity greater than 50%. In this way, the reflective layer 120b has a higher reflectivity, which can further enhance the effect of the reflective layer 120b in reflecting thermal radiation and further improve energy utilization.

[0072] For specific embodiments, please continue to refer to Figures 1 to 3 , the melting point of the reflective layer 120b is greater than 800° C. That is, the material of the reflective layer 120b can be selected to have a melting point greater than 800° C. In this way, the reflective layer 120b has a certain high temperature resistance, thereby improving the service life and reliability of the reflective layer 120b.

[0073] For specific embodiments, please continue to refer to Figures 1 to 3 The material of the substrate 120a includes fused quartz glass, high borosilicate glass or microcrystalline glass. That is, the material of the substrate 120a can be a transparent material with certain high temperature resistance. In this way, it can not only further meet the use requirements, but also enable the reflective layer 120b and the substrate 120a to cooperate with each other when the reflective layer 120b is arranged on the second surface m2 of the substrate 120a, so as to facilitate the reflection of thermal radiation.

[0074] In some embodiments, the side surface of the reflector 120 facing the accommodating cavity Q is configured as a polished mirror surface. The polished mirror surface can reflect the thermal radiation reaching it. Specifically, the material of the reflector 120 includes a metal material or an alloy material. The reflector 120 can be configured as a metal sheet or an alloy sheet with a high reflectivity of visible light and near-infrared light, which is convenient for processing and manufacturing. Exemplarily, the metal sheet can be a copper sheet, a molybdenum sheet or a silver sheet.

[0075] Therefore, the structural form of the emitting element illustrated in some of the above embodiments can be flexibly configured according to usage requirements, and no specific limitation is made here.

[0076] In some embodiments, please refer to Figures 1 to 3 The reflector 120 is configured to reflect the thermal radiation wavelength of 0.39 micrometers to 10 micrometers. That is, the reflector 120 can reflect visible light and near infrared light. In this way, the reflector 120 capable of reflecting the corresponding thermal radiation can be set according to the needs.

[0077] In some embodiments, please refer to Figures 1 to 3, the target part T to be deposited is a tool, and a plurality of sockets j are provided on the carrier 110, and the sockets j are used to insert the tool. The number and arrangement of the sockets j can be set according to the use requirements. The arrangement of the plurality of sockets j can be regular or irregular. The spacing between the plurality of sockets j can be equal or unequal. The apertures of the plurality of sockets j can be equal or unequal.

[0078] by Figure 1 and Figure 2 For example, it illustrates the situation where all the sockets j are arranged in a rectangular array, the apertures of the multiple sockets j are equal, and the spacing between adjacent sockets j is equal. The aperture of the socket j can be set according to the handle of the tool. The handle of the tool is inserted on the socket j, and the blade of the tool is located in the accommodating cavity Q. During the deposition process, a diamond coating can be deposited on the cemented carbide surface of the blade of the tool. The diamond coating has excellent properties such as high hardness, good wear resistance, low friction coefficient, and high thermal conductivity, which can greatly improve the service life of the tool, the processing accuracy and the stability of the processing quality, so that the tool can process difficult-to-process parts such as ceramic parts, non-ferrous metal parts, and composite materials.

[0079] It can be understood that the relevant structure of the carrier 110 for carrying and fixing the target part T can be set according to the specific structure of the target part T, and no specific limitation is made here.

[0080] In some embodiments, please refer to Figures 1 to 3 , the reflector 120 includes a plurality of sub-reflectors 121, which are arranged in sequence around the periphery of the carrier 110. Along the circumference of the carrier 110, two adjacent sub-reflectors 121 abut against each other. That is, along the circumference of the carrier 110, the plurality of sub-reflectors 121 form a connection mode of connecting end to end. Specifically, Figure 1 and Figure 2 For example, the carrier 110 is a rectangular plate-shaped member, the number of sub-reflectors 121 is set to four, and one sub-reflector 121 is set on each side of the carrier 110. Of course, two adjacent sub-reflectors 121 can also be set on each side of the carrier 110, and no specific limitation is made here. The number of sub-reflectors 121 can be set for uniform light according to the circumferential shape of the carrier 110, as long as the required accommodation cavity Q can be formed, and no specific limitation is made here.

[0081] At this time, the side surface of the reflector 120 facing the accommodating cavity Q is composed of the side surface of multiple sub-reflectors 121 facing the accommodating cavity Q, and the side surface of the reflector 120 away from the accommodating cavity Q is composed of the side surface of multiple sub-reflectors 121 away from the accommodating cavity Q.

[0082] When the reflector 120 includes a plurality of sub-reflectors 121 , it is convenient for processing, manufacturing and installing the reflector 120 .

[0083] Figure 4 A schematic diagram of the three-dimensional structure of a carrying device 100 in an embodiment of the present application is shown; for ease of explanation, only the contents related to the embodiment of the present application are shown.

[0084] In some embodiments, please refer to Figure 4 , along the circumferential direction of the carrier 110, a gap x is defined between two adjacent sub-reflectors 121, and the gap x is connected to the accommodating cavity Q. That is, the accommodating cavity Q can be connected to the outer circumferential side of the carrier 110 by means of the gap x. The gap x can discharge the active reaction gas in the accommodating cavity Q, which is beneficial to improve the flow uniformity of the active reaction body in the accommodating cavity Q, thereby improving the deposition quality. In addition, compared with the situation where two adjacent sub-reflectors 121 are in contact with each other, the manufacturing cost of the reflector 120 can also be reduced.

[0085] Of course, in other embodiments, the number of the aforementioned gaps x may be one, two, or other numbers. Figure 4 As an example, it is shown that there are four sub-reflectors 121, forming four gaps x. Figure 4 In the embodiment, the length of the sub-reflector 121 is less than the side length of the corresponding carrier 110. The length can be set according to the specific usage, and no specific limitation is made here.

[0086] Figure 5 Shows Figure 1 The illustrated diagram is a side structural diagram of a carrying device 100; for ease of explanation, only the contents related to the embodiment of the present application are shown.

[0087] In some embodiments, please refer to Figures 1 to 4 , and combined with reference Figure 5 The carrying device 100 further includes a mounting assembly 130. The mounting assembly 130 includes a support member 131 and a fastener 132. The support member 131 is connected to the peripheral side surface of the carrying member 110. A mounting groove a (the mounting groove a is indicated by a dotted line in the figure) for mounting the reflector 120 is defined between the support member 131 and the peripheral side surface of the carrying member 110. The fastener 132 is detachably provided on the support member 131. The fastener 132 is configured to be able to fix the reflector 120 to the mounting groove a.

[0088] Exemplarily, the mounting assembly 130 further includes a connecting member 133, and the support member 131 is fixedly connected to the peripheral side surface of the carrier 110 by means of the connecting member 133. The connecting member 133 may be a detachable connecting component such as a screw or a bolt assembly, and threaded holes matching the connecting member 133 are provided on the support member 131 and the carrier 110. The support member 131 may be constructed in an L-shape. Along the circumference of the carrier 110, a plurality of support members 131 may be provided on each side of the carrier 110. Of course, support members 131 extending longitudinally along each side of the carrier 110 may also be provided, and no specific limitation is made here. The fastener 132 may be a detachable connecting component such as a screw or a bolt assembly, and a threaded hole matching the fastener 132 is provided on the support member 131.

[0089] In this way, it is not only easy to install and remove the reflector 120, but also helps to prevent the emitting element from tilting or shaking relative to the carrier 110. In other words, the reflector 120 can be roughly arranged vertically or tilted relative to the carrier 110, as long as the reflector 120 and the carrier 110 can be relatively fixed, and no specific limitation is made here. Figures 1 to 5 , it is illustrated that the reflective member 120 and the supporting member 110 are both plate-shaped, and the reflective member 120 can be substantially vertically arranged relative to the supporting member 110 .

[0090] Based on the same inventive concept, the embodiment of the present application further provides a chemical vapor deposition device, comprising a body and a carrier device 100 in any of the above embodiments. The body has a processing chamber, and the carrier device 100 is arranged in the processing chamber.

[0091] The advantages possessed by the carrier device 100 in any of the above embodiments are also possessed by the chemical vapor deposition equipment, which will not be elaborated here.

[0092] Figure 6 Shows Figure 1 The illustrated diagram is a three-dimensional structural diagram of the supporting device 100 in cooperation with the heating element 300, the cooling element 400, and the gas delivery element 200; for ease of explanation, only the contents related to the embodiment of the present application are shown.

[0093] In some embodiments, please refer to Figure 6 The chemical vapor deposition apparatus further includes a gas delivery member 200 disposed in the processing chamber, and the output port of the gas delivery member 200 is configured to be disposed toward the opening k. The gas delivery member 200 is used to deliver the reaction gas toward the opening k. The reaction gas is activated to become an active reaction gas after being heated in the processing chamber to participate in the deposition process on the target part T.

[0094] In some embodiments, please refer to Figure 6The chemical vapor deposition apparatus further includes a heating element 300 disposed in the processing chamber. The heating element 300 is located on a side of the opening k away from the carrier 110. The heating element 300 is used to generate heat radiation. Figure 6 For example, along the first direction F1, the opening k of the carrier 100 is arranged upward, and the heating element 300 is located above the carrier 100. Exemplarily, the heating element 300 can be a heating wire, and the heating wire can be provided in multiples, and the multiple heating wires can be arranged parallel to each other. The heating wire can emit heat radiation mainly concentrated in the near-infrared wavelength range to heat the target part T in the accommodation cavity Q.

[0095] Further, continue with Figure 6 For example, the gas delivery member 200 illustrated in some of the aforementioned embodiments can be located above the heating member 300, and the gas delivery pipe outputs the reaction gas, which is activated to become an active reaction gas after passing through the high-temperature heating member 300. At this time, the thermal radiation generated by the heating member 300 heats the target member T, and the active reaction gas contacts the target member T, and the desired thin film (such as the diamond coating mentioned above) can be deposited. It can be understood that under certain process parameter conditions, the more thermal radiation energy the target member T receives, the higher the concentration of active reaction gas near the target member T, and the higher the deposition rate and efficiency. In other words, when the reflector 120 can reflect thermal radiation and reduce the diffusion loss of active reaction gas, not only the energy utilization rate is improved, but also the deposition rate and efficiency are improved.

[0096] In some embodiments, please refer to Figure 6 The chemical vapor deposition apparatus further includes a cooling member 400 disposed in the processing chamber, and the cooling member 400 is located on a side of the carrier 110 away from the opening k. Figure 6 For example, along the first direction F1, the cooling member 400 is located below the carrier 110. The cooling member 400 can be set in the structural form of a base, and a cooling pipeline can be set inside the cooling member 400, and a coolant can be passed into the cooling pipeline. That is, the cooling method of the cooling member 400 can be water cooling. The cooling member 400 can directly cool the carrier 110, or it can indirectly cool the carrier 110 with the help of a heat exchange medium, and no specific limitation is made here.

[0097] The following is an exemplary description of the use of the chemical vapor deposition equipment provided in the embodiments of the present application, in combination with the situations illustrated in some of the above embodiments.

[0098] Combined with reference Figures 1 to 6, taking the target part T to be deposited as a tool as an example, the handle of the tool is vertically inserted into the socket j of the carrier 110, and the handle of the tool is relatively fixed to the carrier 110 by means of the socket j. The reflector 120 is fixedly connected to the carrier 110 through the mounting assembly 130, and the assembled carrier 100 carrying the tool is placed on the cooling member 400 in the processing chamber of the chemical vapor deposition equipment. Correspondingly, the carrier 100 is located directly below the gas delivery member 200. A plurality of parallelly arranged heating members 300 are installed between the carrier 100 and the gas delivery member 200. In the case where the heating member 300 is an electric heating wire, the heating member 300 is straightened and horizontal, so that the heating member 300 and the carrier 100 do not contact each other. After the installation of the heating member 300 is completed, the processing chamber of the chemical vapor deposition equipment is closed and the processing chamber is evacuated. Subsequently, the heating element 300 is powered on and the reaction gas is input through the gas delivery element 200. The reaction gas is activated to become active reaction gas after passing through the high-temperature heating element 300. The desired coating can be deposited on the blade of the tool. In this process, the temperature of the tool surrounded by the reflector 120 is increased, which improves the utilization rate of thermal radiation energy. At the same time, the reflector 120 also prevents the active reaction gas generated by the heating element 300 from diffusing and losing to the surroundings, thereby increasing the concentration of the active reaction gas in the accommodating cavity Q where the tool is located, and increasing the production rate of the coating.

[0099] To sum up, the carrier device 100 and chemical vapor deposition equipment provided in the embodiment of the present application are easy to use, can improve the utilization rate of energy and active reaction gases, increase the number of products produced at a single time, shorten the single production time, reduce production energy consumption costs, and thus improve overall production efficiency.

[0100] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0101] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be construed as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.

Claims

1. A carrier device, used to be arranged in a processing chamber of a chemical vapor deposition device, characterized in that: The carrying device comprises: A carrier, used for carrying a target object to be deposited; and A reflector is arranged around the periphery of the carrier, and the reflector and the carrier together define a accommodating cavity. The reflector surrounds an opening connected to the accommodating cavity, and the opening is arranged opposite to the carrier; the reflector is configured to reflect heat radiation toward the accommodating cavity.

2. The carrying device according to claim 1, characterized in that: The reflective member comprises a substrate and a reflective layer, wherein the substrate has a first surface facing the accommodating cavity and a second surface facing away from the accommodating cavity; Wherein, the reflective layer is provided on the first surface; or The reflective layer is disposed on the second surface, and the substrate is configured as a transparent member.

3. The carrying device according to claim 2, characterized in that: The surface roughness of the surface where the reflective layer is provided between the first surface and the second surface is less than 6.3 micrometers; and / or The material of the reflective layer includes metal material or alloy material; and / or The reflectivity of the reflective layer is greater than 50%; and / or The melting point of the reflective layer is greater than 800° C.; and / or The material of the substrate includes fused quartz glass, high borosilicate glass or microcrystalline glass.

4. The carrying device according to claim 1, characterized in that: A surface of one side of the reflector facing the accommodating cavity is configured as a polished mirror surface.

5. The carrying device according to claim 4, characterized in that: The material of the reflector includes metal material or alloy material.

6. The carrying device according to any one of claims 1 to 5, characterized in that: The reflector is configured to reflect thermal radiation having a wavelength of 0.39 μm to 10 μm; and / or The target part to be deposited is a tool, and a plurality of insertion holes are provided on the carrier, and the insertion holes are used to insert the tool.

7. The carrying device according to any one of claims 1 to 5, characterized in that: The reflector comprises a plurality of sub-reflectors, and the plurality of sub-reflectors are sequentially arranged around the periphery of the carrier; Wherein, along the circumference of the carrier, two adjacent sub-reflectors abut against each other; or Along the circumference of the carrier, a gap is defined between two adjacent sub-reflectors, and the gap is communicated with the accommodating cavity.

8. The carrying device according to any one of claims 1 to 5, characterized in that: The carrying device also includes a mounting assembly; The installation assembly includes: A support member connected to the peripheral side surface of the carrier member; a mounting groove for mounting the reflector is defined between the support member and the peripheral side surface of the carrier member; and A fastener is detachably provided on the support member; the fastener is configured to fix the reflector member to the mounting groove.

9. A chemical vapor deposition device, characterized in that: include: a body having a processing chamber; and The carrier device according to any one of claims 1 to 8, wherein the carrier device is arranged in the processing chamber.

10. The chemical vapor deposition equipment according to claim 9, characterized in that: The chemical vapor deposition equipment further comprises a gas delivery member disposed in the processing chamber, wherein an output port of the gas delivery member is configured to be disposed toward the opening; and / or The chemical vapor deposition equipment further comprises a heating element disposed in the processing chamber, the heating element being located on a side of the opening away from the carrier, the heating element being used to generate thermal radiation; and / or The chemical vapor deposition equipment further comprises a cooling member arranged in the processing chamber, wherein the cooling member is located on a side of the carrier away from the opening.

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