Flow guiding device and semiconductor equipment
By designing a flow guide device in the closed cavity, agitating the air flow on the flow guide cover with a uniform agitating plate, the problem of etching uneven caused by uneven air flow is solved, and the uniform flow of process gas and the consistency of the thickness of the deposited film is achieved. .
Patent Information
- Application Number
- CN202420107116.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-01-16
- Publication Date
- 2024-12-24
- Estimated Expiration
- 2034-01-16
AI Technical Summary
The uneven etching air flow in the existing closed cavity leads to inconsistent etching reaction speeds, resulting in uneven deposition film thickness.
A flow guide device is designed, including a flow guide cover and a uniform flow agitator plate. A plurality of flow guide holes are opened on the flow guide cover for conveying process gas. The uniform flow guide plate is rotatably arranged on the bottom side of the flow guide cover, and by The agitating gas flow achieves uniform flow of gas.
Through the agitation effect of the uniform agitation plate, the process gas in the reaction chamber flows uniformly, improves the uniformity of etching and prevents uneven chemical deposition.
Smart Images
Figure CN222233567U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of wafer processing, in particular to a flow guiding device and semiconductor equipment. Background Art
[0002] With the rapid development of the semiconductor industry, etching technology can be divided into two categories: wet etching and dry etching. Dry etching is a technology that uses plasma to etch thin films. It requires the use of a variety of gases for etching (for example: inert system, corrosive system, oxidizing system, and C, F system), and the etching process usually needs to be carried out in a closed chamber.
[0003] The inventors have found through research that the etching airflow in the existing closed chamber has inconsistent airflow size during reaction, which makes it easy for the airflow to be uneven, which in turn leads to uneven etching reaction speed in different parts of the wafer, resulting in inconsistent thickness of the subsequent deposited film. Utility Model Content
[0004] The utility model aims to provide a flow guiding device and a semiconductor device, which can make the process gas input into the reaction chamber flow evenly, so as to make the etching more even and prevent the chemical deposition from being uneven.
[0005] The embodiment of the utility model is achieved as follows:
[0006] In a first aspect, the utility model provides a flow guide device, comprising a flow guide cover and a uniform flow stirring plate, wherein the flow guide cover is used to be arranged on the top of a reaction chamber, and a plurality of flow guide holes are opened on the flow guide cover, each of the flow guide holes is used to pass through the reaction chamber, and is used to convey process gas to the reaction chamber, and the uniform flow stirring plate is rotatably arranged on the bottom side of the flow guide cover and partially blocks the flow guide holes, wherein the uniform flow stirring plate can rotate relative to the flow guide cover under the impetus of the airflow in the flow guide holes to stir the gas on the bottom side of the flow guide cover.
[0007] In an optional embodiment, the uniform agitator includes an integrally arranged fan-shaped portion and a rotating portion, the outer edge of the fan-shaped portion coincides with the outer edge of the guide cover, and the rotating portion is arranged on the inner side of the fan-shaped portion and is rotatably connected to the center position of the guide cover.
[0008] In an optional embodiment, the rotating portion is provided with a rotating shaft, and a shaft hole is provided at a central position of the deflector cover, and the rotating shaft is rotatably disposed in the shaft hole.
[0009] In an optional embodiment, a first guide groove is respectively provided on one side edge of the fan-shaped portion, and the first guide groove is connected to a portion of the guide holes corresponding to the fan-shaped portion, so as to discharge the process gas and drive the fan-shaped portion to rotate.
[0010] In an optional embodiment, a second guide groove is further provided on a side edge of the fan-shaped portion away from the first guide groove, and the second guide groove is connected to a portion of the guide holes corresponding to the fan-shaped portion for discharging the process gas, and the guide area of the second guide groove is smaller than the guide area of the first guide groove.
[0011] In an optional embodiment, a plurality of pressure relief holes are provided on the fan-shaped portion, and the plurality of pressure relief holes all penetrate the fan-shaped portion for selectively communicating with part of the guide holes.
[0012] In an optional embodiment, the guide cover is disc-shaped, and the plurality of guide holes are evenly distributed on the guide cover.
[0013] In an optional embodiment, the guide holes include a plurality of groups, and the guide holes in each group are distributed radially.
[0014] In an optional embodiment, the top surface of the uniform agitator plate and the bottom surface of the guide cover are clearance-matched.
[0015] In a second aspect, the utility model provides a semiconductor device, comprising a reaction chamber, a carrier platform and a flow guide device as described in any of the aforementioned embodiments, wherein the carrier platform is arranged at the bottom of the reaction chamber, the flow guide cover is arranged on the top side of the reaction chamber, and the flow guide hole is used to transport process gas into the reaction chamber.
[0016] The beneficial effects of the embodiments of the utility model include:
[0017] The utility model provides a flow guide device, a plurality of flow guide holes are provided on the flow guide cover, each flow guide hole is used to transport process gas into the reaction chamber, and a uniform flow stirring plate is rotatably arranged on the bottom side of the flow guide cover, and blocks part of the flow guide holes, wherein the uniform flow stirring plate can rotate relative to the flow guide cover under the impetus of the airflow in the flow guide hole to stir the gas on the bottom side of the flow guide cover to achieve a uniform flow effect. Compared with the prior art, the flow guide device provided by the utility model can utilize the flow stirring effect of the uniform flow stirring plate to make the process gas input into the reaction chamber flow uniformly, make the etching more uniform, and prevent uneven chemical deposition. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] In order to more clearly illustrate the technical solutions of the embodiments of the utility model, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the utility model and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying creative work.
[0019] Figure 1 An overall schematic diagram of a flow guide device provided in the first embodiment of the utility model;
[0020] Figure 2 An exploded schematic diagram of a flow guide device provided in a first embodiment of the utility model;
[0021] Figure 3 for Figure 2 Schematic diagram of the structure of the uniform stirring plate.
[0022] icon:
[0023] 100-flow guide device; 110-flow guide cover; 111-flow guide hole; 113-axis hole; 130-uniform stirring plate; 131-fan-shaped part; 133-rotating part; 135-rotating shaft; 137-first flow guide groove; 138-pressure relief hole; 139-second flow guide groove. DETAILED DESCRIPTION
[0024] In order to make the purpose, technical scheme and advantages of the embodiments of the utility model clearer, the technical scheme in the embodiments of the utility model will be clearly and completely described below in conjunction with the drawings in the embodiments of the utility model. Obviously, the described embodiments are part of the embodiments of the utility model, not all of the embodiments. Generally, the components of the embodiments of the utility model described and shown in the drawings here can be arranged and designed in various different configurations.
[0025] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the present invention to be protected, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
[0026] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.
[0027] In the description of the present utility model, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inside", "outside", etc. indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, or the positions or positional relationships in which the utility model product is usually placed when in use, and are only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific position, be constructed and operated in a specific position, and therefore cannot be understood as a limitation on the present utility model. In addition, the terms "first", "second", "third", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.
[0028] In addition, the terms "horizontal", "vertical" and the like do not mean that the components are required to be absolutely horizontal or suspended, but can be slightly tilted. For example, "horizontal" only means that its direction is more horizontal than "vertical", and does not mean that the structure must be completely horizontal, but can be slightly tilted.
[0029] In the description of the present invention, it is also necessary to explain that, unless otherwise clearly specified and limited, the terms "set", "install", "connect", and "connect" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0030] First embodiment
[0031] Please refer to Figures 1 to 3 This embodiment provides a flow guiding device 100, which can utilize the stirring effect to make the process gas input into the reaction chamber flow evenly, so that the etching is more uniform and the phenomenon of uneven chemical deposition is prevented.
[0032] The flow guide device 100 provided in this embodiment includes a flow guide cover 110 and a uniform flow stirring plate 130. The flow guide cover 110 is used to be arranged on the top of the reaction chamber, and a plurality of flow guide holes 111 are opened on the flow guide cover 110. Each flow guide hole 111 is used to pass through the reaction chamber and is used to transport process gas to the reaction chamber. The uniform flow stirring plate 130 is rotatably arranged on the bottom side of the flow guide cover 110 and blocks part of the flow guide holes 111, wherein the uniform flow stirring plate 130 can rotate relative to the flow guide cover 110 under the impetus of the airflow in the flow guide holes 111 to stir the gas on the bottom side of the flow guide cover 110.
[0033] In actual use, the flow guide device 100 can be set at the top of the reaction chamber, and the uniform flow stirring plate 130 is located at the bottom side of the flow guide cover 110. The uniform flow stirring plate 130 can cover part of the flow guide holes 111 and rotate relative to the flow guide cover 110 to achieve the stirring effect on the airflow. The stirring effect of the uniform flow stirring plate 130 makes the process gas input into the reaction chamber flow evenly, making the etching more uniform and preventing uneven chemical deposition.
[0034] It should be noted that the reaction chamber in this embodiment may be an etching reaction chamber or a deposition reaction chamber. Any reaction chamber that requires the introduction of process gas is within the protection scope of the present utility model.
[0035] In this embodiment, the uniform agitator 130 includes an integrally arranged fan-shaped portion 131 and a rotating portion 133, the outer edge of the fan-shaped portion 131 is close to the outer edge of the guide cover 110, and the rotating portion 133 is arranged on the inner side of the fan-shaped portion 131 and is rotatably connected to the center of the guide cover 110. Specifically, the rotating portion 133 is fishtail-shaped and is rotatably connected to the center of the guide cover 110, so that the fan-shaped portion 131 can be driven to rotate around the center of the guide cover 110 to achieve a stirring action.
[0036] In this embodiment, the rotating portion 133 is provided with a rotating shaft 135, and a shaft hole 113 is provided at the center of the air guide cover 110, and the rotating shaft 135 is rotatably disposed in the shaft hole 113. Specifically, the rotating shaft 135 can pass through the shaft hole 113, and the friction between the rotating shaft 135 and the shaft hole 113 is small and can be ignored, so it will not cause any influence on the rotation of the uniform agitator 130.
[0037] In this embodiment, the first guide groove 137 is respectively provided on one side edge of the fan-shaped portion 131, and the first guide groove 137 is connected to the partial guide hole 111 corresponding to the fan-shaped portion 131, and is used to discharge the process gas and drive the fan-shaped portion 131 to rotate. Specifically, the first guide groove 137 is opened on the side surface of the fan-shaped portion 131 close to the guide cover 110, and the opening end of the first guide groove 137 is located at one side edge of the fan-shaped portion 131. The first guide groove 137 is exhausted toward one side of the fan-shaped portion 131, which can drive the uniform agitator 130 to rotate.
[0038] In this embodiment, a second guide groove 139 is further provided on the side edge of the fan-shaped portion 131 away from the first guide groove 137. The second guide groove 139 is connected to the partial guide hole 111 corresponding to the fan-shaped portion 131, and is used to discharge the process gas, and the guide area of the second guide groove 139 is smaller than the guide area of the first guide groove 137. Specifically, the design of the second guide groove 139 can discharge the process gas faster and avoid the process gas from gathering at the blocked guide hole 111. Moreover, the guide area of the second guide groove 139 is smaller than the guide area of the first guide groove 137, which means that the opening area of the second guide groove 139 is smaller than the opening area of the first guide groove 137. Through the difference in the opening area, the flow velocities on both sides can be different, thereby achieving uneven pressure at both ends, and achieving the function of pushing the uniform agitator 130.
[0039] In this embodiment, a plurality of pressure relief holes 138 are provided on the fan-shaped portion 131, and the plurality of pressure relief holes 138 all penetrate the fan-shaped portion 131, and are used to selectively communicate with part of the flow guide holes 111. Specifically, the plurality of pressure relief holes 138 can partially discharge the process gas in the blocked part of the flow guide holes 111, thereby avoiding a decrease in the overall process gas flow rate due to blocking.
[0040] In this embodiment, the guide cover 110 is disc-shaped, and a plurality of guide holes 111 are evenly distributed on the guide cover 110. The even distribution of the plurality of guide holes 111 can achieve uniform air intake, ensure that air intake can be achieved at all locations of the guide cover 110, and further ensure the uniformity of the overall airflow.
[0041] Furthermore, the guide holes 111 include multiple groups, each group of guide holes 111 is distributed radially. Specifically, the multiple groups of guide holes 111 are distributed divergently on the surface of the guide cover 110, which can maximize the distribution uniformity of the guide holes 111 and also facilitate the stirring effect of the fan-shaped portion 131.
[0042] In this embodiment, the top surface of the uniform agitator 130 and the bottom surface of the guide cover 110 are gap-matched. Preferably, the gap between the top surface of the uniform agitator 130 and the bottom surface of the guide cover 110 is less than or equal to 1 mm, which can reduce gap leakage as much as possible while ensuring that the two are not in contact, thereby ensuring the airflow pushing effect of the uniform agitator 130.
[0043] In summary, the present embodiment provides a flow guide device 100, wherein a plurality of flow guide holes 111 are provided on the flow guide cover 110, each flow guide hole 111 is used to transport process gas into the reaction chamber, and at the same time, a uniform flow stirring plate 130 is rotatably arranged on the bottom side of the flow guide cover 110, and partially blocks the flow guide holes 111, wherein the uniform flow stirring plate 130 can rotate relative to the flow guide cover 110 under the impetus of the airflow in the flow guide holes 111, so as to stir the gas on the bottom side of the flow guide cover 110 and realize the flow equalization effect. Compared with the prior art, the flow guide device 100 provided in the present embodiment can utilize the flow stirring effect of the uniform flow stirring plate 130 to make the process gas input into the reaction chamber flow evenly, make the etching more uniform, and prevent uneven chemical deposition.
[0044] Second embodiment
[0045] The present embodiment provides a semiconductor device, including a reaction chamber, a carrier platform and a flow guide device 100, wherein the basic structure and principle of the flow guide device 100 and the technical effects produced are the same as those of the first embodiment. For the sake of brief description, for parts not mentioned in this embodiment, reference may be made to the corresponding contents in the first embodiment.
[0046] The semiconductor device provided in this embodiment includes a reaction chamber, a carrier platform and a flow guide device 100, wherein the flow guide device 100 includes a flow guide cover 110 and a uniform flow stirring plate 130, wherein the flow guide cover 110 is used to be arranged at the top of the reaction chamber, and a plurality of flow guide holes 111 are opened on the flow guide cover 110, each of which is used to pass through the reaction chamber and is used to transport process gas to the reaction chamber, and the uniform flow stirring plate 130 is rotatably arranged at the bottom side of the flow guide cover 110 and blocks part of the flow guide holes 111, wherein the uniform flow stirring plate 130 can rotate relative to the flow guide cover 110 under the impetus of the airflow in the flow guide holes 111 to stir the gas at the bottom side of the flow guide cover 110. The carrier platform is arranged at the bottom of the reaction chamber, the flow guide cover 110 is arranged at the top side of the reaction chamber, and the flow guide holes 111 are used to transport process gas into the reaction chamber.
[0047] Among them, the semiconductor equipment can be a deposition equipment or an etching equipment. By opening a plurality of guide holes 111 on the guide cover 110, each guide hole 111 is used to transport process gas into the reaction chamber, and at the same time, the uniform stirring plate 130 is rotatably arranged on the bottom side of the guide cover 110, and partially blocks the guide holes 111, wherein the uniform stirring plate 130 can rotate relative to the guide cover 110 under the impetus of the airflow in the guide hole 111 to stir the gas on the bottom side of the guide cover 110 to achieve a uniform flow effect. The semiconductor equipment provided in this embodiment can utilize the stirring effect of the uniform stirring plate 130 to make the process gas input into the reaction chamber flow evenly, make the etching more uniform, and prevent uneven chemical deposition.
[0048] The above description is only the preferred embodiment of the utility model, and is not intended to limit the utility model. For those skilled in the art, the utility model can have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the utility model shall be included in the protection scope of the utility model.
Claims
1. A flow guide device, characterized in that: It includes a guide cover and a uniform stirring plate, wherein the guide cover is used to be arranged on the top of the reaction chamber, and a plurality of guide holes are opened on the guide cover, each of the guide holes is used to pass through the reaction chamber, and is used to transport process gas to the reaction chamber, and the uniform stirring plate is rotatably arranged on the bottom side of the guide cover and covers part of the guide holes, wherein the uniform stirring plate can rotate relative to the guide cover under the impetus of the airflow in the guide holes to stir the gas on the bottom side of the guide cover.
2. The flow guiding device according to claim 1, characterized in that: The uniform agitator plate includes a sector portion and a rotating portion which are integrally arranged. The outer edge of the sector portion is close to the outer edge of the guide cover. The rotating portion is arranged on the inner side of the sector portion and is rotatably connected to the center position of the guide cover.
3. The flow guiding device according to claim 2, characterized in that: The rotating part is provided with a rotating shaft, and the center position of the deflector cover is provided with an axial hole, and the rotating shaft is rotatably arranged in the axial hole.
4. The flow guiding device according to claim 2, characterized in that: A first guide groove is respectively provided on one side edge of the sector-shaped portion, and the first guide groove is connected to a portion of the guide hole corresponding to the sector-shaped portion, and is used to discharge the process gas and drive the sector-shaped portion to rotate.
5. The flow guiding device according to claim 4, characterized in that: A second guide groove is further provided on one side edge of the fan-shaped portion away from the first guide groove. The second guide groove is connected to the guide hole corresponding to the fan-shaped portion for discharging the process gas, and the guide area of the second guide groove is smaller than the guide area of the first guide groove.
6. The flow guiding device according to claim 2, characterized in that: The fan-shaped portion is provided with a plurality of pressure relief holes, and the plurality of pressure relief holes all penetrate the fan-shaped portion and are used for selectively communicating with part of the flow guide holes.
7. The flow guiding device according to any one of claims 1 to 6, characterized in that: The guide cover is disc-shaped, and a plurality of guide holes are evenly distributed on the guide cover.
8. The flow guiding device according to claim 7, characterized in that: The guide holes include a plurality of groups, and the guide holes in each group are distributed in the radial direction.
9. The flow guiding device according to any one of claims 1 to 6, characterized in that: The top surface of the uniform agitator plate and the bottom surface of the guide cover are clearance-matched.
10. A semiconductor device, characterized in that: It comprises a reaction chamber, a supporting platform and a flow guide device as described in any one of claims 1 to 9, wherein the supporting platform is arranged at the bottom of the reaction chamber, the flow guide cover is arranged on the top side of the reaction chamber, and the flow guide hole is used to transport process gas into the reaction chamber.