Connecting structure for epitaxial equipment

Abstract

The utility model discloses a connecting structure for epitaxial equipment. The connecting structure for the epitaxial equipment comprises a connecting body and a cleaning mechanism. The connecting body is connected with the first cavity and the second cavity, and the wafer conveying opening is formed in the connecting body; the cleaning mechanism comprises a gas source assembly capable of providing and extracting gas and a ventilation pipeline at least partially arranged on the connecting body, one end of the ventilation pipeline communicates with the wafer conveying opening, and the end, away from the wafer conveying opening, of the ventilation pipeline communicates with the gas source assembly; the air source assembly can conduct air inflation and air exhaust on the wafer conveying opening, air inflation can enable the wafer conveying opening to be inflated with air and can raise particulate matter in the wafer conveying opening, air exhaust can exhaust the particulate matter together, and therefore the purpose of cleaning the wafer conveying opening is achieved, when the gate valve is opened, the particulate matter in the wafer conveying opening cannot be raised, and the cleaning efficiency of the wafer conveying opening is improved. And therefore, the cleanliness of the wafer is improved.

Description

Technical Field

[0001] The present application relates to the technical field of epitaxial equipment, and in particular to a connection structure for epitaxial equipment. Background Art

[0002] Semiconductor epitaxy refers to the process of growing one or more semiconductor thin films on the surface of a semiconductor substrate through chemical vapor deposition in an ultra-high temperature environment to form a semiconductor wafer.

[0003] Semiconductor epitaxial equipment generally includes a reaction chamber for semiconductor crystal reaction and a transmission chamber with a built-in robotic arm. A connection structure for epitaxial equipment is provided between the reaction chamber and the transmission chamber. A wafer transfer port for transferring wafers is provided on the connection structure for epitaxial equipment. The robotic arm can pass through the wafer transfer port and extend into the reaction chamber to pick up and place the wafers. A gate valve is provided in the transmission chamber, which can cooperate with the wafer transfer port to form a seal. At the same time, the gate valve can control the opening and closing of the wafer transfer port and the connection between the reaction chamber and the transmission chamber.

[0004] During the crystal reaction process, particles will accumulate in the transfer port. When the gate valve at the transfer port is opened, the reaction chamber and the transfer chamber will be connected to each other. At this time, due to the pressure difference between the reaction chamber and the transfer chamber, the pressure difference will cause the airflow at the transfer port to be turbulent, which will cause the particles accumulated in the transfer port to be lifted and diffused, causing the particles to adhere to the wafer and cause wafer contamination. Utility Model Content

[0005] In order to solve the deficiencies of the prior art, the purpose of the present application is to provide a connection structure for epitaxial equipment, which has a high degree of cleanliness at the wafer transfer port.

[0006] A connection structure for epitaxial equipment, which is used for connecting a first cavity and a second cavity of the epitaxial equipment, and a wafer transfer port for conveying wafers is provided on the connection structure for the epitaxial equipment, and the wafer transfer port connects the first cavity and the second cavity; the connection structure for the epitaxial equipment comprises a connection body and a cleaning mechanism; the connection body connects the first cavity and the second cavity, and the wafer transfer port is provided on the connection body; the cleaning mechanism comprises a gas source component capable of providing and extracting gas, and a ventilation duct at least partially arranged on the connection body, one end of the ventilation duct is connected to the wafer transfer port, and the end of the ventilation duct away from the wafer transfer port is connected to the gas source component.

[0007] Furthermore, the connection structure for the epitaxial equipment also includes a first pipeline, a second pipeline and a third pipeline that are interconnected, the first pipeline is connected to the ventilation duct, the second pipeline is connected to the gas source assembly, and the third pipeline is connected to the second cavity; control valves are provided on the second pipeline and the third pipeline.

[0008] Furthermore, a plurality of through holes are evenly distributed on the inner side wall of the film transmission port.

[0009] Furthermore, a cooling cavity is formed inside the connecting body, and the cooling cavity is filled with cooling liquid. A liquid inlet interface and a liquid outlet interface are provided on the connecting body, and both the liquid inlet interface and the liquid outlet interface are connected to the cooling cavity.

[0010] Furthermore, the connection structure for the epitaxial equipment also includes a first protective plate, a second protective plate and a driving mechanism; the first protective plate is fixedly connected to one side of the connection body, and a first connection port connected to the film transmission port is opened on the first protective plate; the second protective plate is located on the side of the connection body connected to the first protective plate, and the second protective plate is opened with a second connection port adapted to the first connection port; the driving mechanism is fixedly connected to the connection body, and the driving mechanism is transmission-connected to the second protective plate, so that the driving mechanism can drive the second protective plate to move relative to the first protective plate, and the second protective plate moves relative to the first protective plate to open the first connection port or close the first connection port.

[0011] Furthermore, the driving mechanism includes a driving member and an eccentric shaft, the driving member is at least partially connected to the connecting body; one end of the eccentric shaft is transmission-connected to the driving member, and the end of the eccentric shaft away from the driving member is connected to the second protective plate; the eccentric shaft includes a first connecting shaft, a second connecting shaft and a connecting rod, the driving member is transmission-connected to the first connecting shaft, one end of the first connecting shaft is fixedly connected to the connecting rod, and the end of the connecting rod away from the first connecting shaft is fixedly connected to the second connecting shaft, the extension directions of the first connecting shaft and the second connecting shaft are consistent, and the extension direction of the connecting rod is perpendicular to the extension direction of the second connecting shaft.

[0012] Furthermore, the connection structure for the epitaxial equipment also includes an observation window and a detection mechanism for detecting the temperature of the first cavity. The observation window is opened on the connection body, and the observation window is connected to the first cavity. The detection mechanism is at least partially connected to a side of the connection body away from the first protective plate, and the detection mechanism is arranged toward the observation window.

[0013] Furthermore, the connection structure for the epitaxial device also includes a connecting member and a positioning member; the connecting member is fixedly connected to the connecting body, and a fixing hole for connecting the first cavity and the second cavity is provided on the connecting member; the positioning member is at least partially connected to the connecting member, and a positioning hole for positioning the connection structure for the epitaxial device and the first cavity is provided on the positioning member.

[0014] Furthermore, the number of the connecting members is two, the conveying direction of the wafer is defined as the wafer conveying direction, and the two connecting members are distributed on both sides of the connecting body in a direction perpendicular to the wafer conveying direction.

[0015] In the present application, the air source component can first inflate the film transmission port through the ventilation pipeline connected to the film transmission port, and can blow up the particles in the film transmission port during the inflation process. Then the air source component switches to exhaust, and the particles in the film transmission port can be adsorbed and cleaned at the same time to achieve the cleaning of the film transmission port, thereby improving the cleanliness of the film transmission port, and then when the gate valve is opened, the particles in the film transmission port will not be lifted up, thereby improving the cleanliness of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 A schematic diagram of the connection between the connection structure for the epitaxial device of the present application and the first cavity and the second cavity;

[0017] Figure 2 This is a schematic diagram of the overall structure of the connection structure for the epitaxial device of the present application;

[0018] Figure 3 A schematic structural diagram of a connection structure for an epitaxial device of the present application from another angle;

[0019] Figure 4 A partial structural schematic diagram of a connection structure for an epitaxial device of the present application;

[0020] Figure 5 For this application Figure 2 A magnified schematic diagram of center A.

[0021] 1. The connecting structure of the epitaxial device is shown in FIG. 1 . The connecting body is shown in FIG. 1 . The film transfer port is shown in FIG. 1 . The through hole is shown in FIG. 1 . The liquid inlet port is shown in FIG. 1 . The liquid outlet port is shown in FIG. 1 . The cleaning mechanism is shown in FIG. 1 . The gas source assembly is shown in FIG. 1 . The ventilation line is shown in FIG. 1 . The branch line is shown in FIG. 1 . The first line is shown in FIG. 1 . The second line is shown in FIG. 1 . The third line is shown in FIG. 1 . The first protective plate is shown in FIG. 1 . The first connecting port is shown in FIG. 1 . The second protective plate is shown in FIG. 1 . The second connecting port is shown in FIG. 1 . The driving mechanism is shown in FIG. 1 . The driving member is shown in FIG. 1 . The eccentric shaft is shown in FIG. 1 . The first connecting shaft is shown in FIG. 1 . The second connecting shaft is shown in FIG. 1 . The connecting member is shown in FIG. 1 . The connecting member is shown in FIG. 1 . The fixing hole is shown in FIG. 1 . The positioning member is shown in FIG. 1 . The positioning hole is shown in FIG. 1 . The detection mechanism is shown in FIG. 2 . The first cavity is shown in FIG. 3 . The second cavity is shown in FIG. DETAILED DESCRIPTION

[0022] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the specific implementation manner of the present application will be clearly and completely described below in conjunction with the drawings in the implementation manner of the present application.

[0023] like Figure 1As shown, the present application provides a connection structure 100 for epitaxial equipment, which is used for connecting the first cavity 200 and the second cavity 300 of the semiconductor epitaxial equipment. Among them, the connection structure 100 for epitaxial equipment is provided with a wafer transfer port 111 for transferring wafers, and the wafer transfer port 111 connects the first cavity 200 and the second cavity 300. A robotic arm for picking up wafers can be arranged in the second cavity 300, and the robotic arm can transfer the wafer from the second cavity 300 to the first cavity 200 before the reaction, and the robotic arm can also transfer the wafer from the first cavity 200 to the second cavity 300 after the reaction.

[0024] It should be noted that the first cavity 200 may be a reaction cavity, and the second cavity 200 may be a transfer cavity; or the first cavity 200 may be a transfer cavity, and the second cavity 200 may be a loading cavity, which is not limited in the present application.

[0025] The present application takes the first cavity 200 as a reaction cavity and the second cavity 200 as a transmission cavity as an example for explanation. The reaction cavity generates high temperature during operation.

[0026] like Figures 2 to 4 As shown, specifically, the connection structure 100 for epitaxial equipment includes a connection body 11 and a cleaning mechanism 12. The two sides of the connection body 11 are respectively connected to the first cavity 200 and the second cavity 300, and the film transfer port 111 is opened on the connection body 11. The cleaning mechanism 12 includes an air source component 121 and a ventilation line 122. The air source component 121 can provide and extract gas, and the ventilation line 122 is at least partially arranged on the connection body 11, and one end of the ventilation line 122 is connected to the film transfer port 111, and the end of the ventilation line 122 away from the film transfer port 111 is connected to the air source component 121. The air source component 121 can inflate and exhaust air into the film transfer port 111 through the ventilation line 122.

[0027] After the wafer reaction is completed, the gas source component 121 inflates the wafer transfer port 111. During the inflation process, the accumulated particles in the wafer transfer port 111 can be blown up, and the inflated gas can prevent the negative pressure in the wafer transfer port 111 from being difficult to evacuate when the wafer transfer port 111 is subsequently evacuated. When the particles are raised, the gas source component 121 switches to evacuate from the wafer transfer port 111, so that the raised particles are adsorbed and cleaned to the outside of the wafer transfer port 111 through the ventilation pipeline 122, thereby achieving the purpose of cleaning the wafer transfer port 111, avoiding the situation where particles are raised when the gate valve is opened to connect the first cavity 200 and the second cavity 300, and then when the robot arm in the second cavity 300 picks up the wafer, it will not be contaminated by the particles, thereby improving the cleanliness of the wafer. When the first cavity 200 is a reaction cavity and the second cavity 200 is a transmission cavity, the gate valve is located in the second cavity 200.

[0028] like Figure 3 and Figure 4 As shown, as an implementation manner, the connection structure 100 for epitaxial equipment further includes a three-way pipeline, and the three-way pipeline includes a first pipeline 123, a second pipeline 124 and a third pipeline 125 that are interconnected.

[0029] Specifically, the first pipeline 123 is in communication with the ventilation pipeline 122, and the ventilation pipeline 122 is in communication with the film transmission port 111, so that the first pipeline 123 in the three-way pipeline is in communication with the film transmission port 111. The second pipeline 124 is in communication with the air source component 121, and the air source component 121 and the film transmission port 111 are in communication through the second pipeline 124 and the first pipeline 123, so as to achieve the purpose of inflating and exhausting air to the film transmission port 111 through the air source component 121.

[0030] The third pipeline 125 is in communication with the second cavity 300, and the second cavity 300 is in communication with the wafer transfer port 111 through the third pipeline 125 and the first pipeline 123. Before the first cavity 200 and the second cavity 300 are in communication, the pressure between the wafer transfer port 111 and the second cavity 300 can be balanced through the third pipeline 125, thereby reducing the pressure difference between the wafer transfer port 111 and the second cavity 300, and the situation that the airflow at the wafer transfer port 111 is disturbed and particles are raised due to excessive pressure difference will not occur. Then, when the gate valve is opened to connect the first cavity 200 and the second cavity 300, the stability of the airflow at the wafer transfer port 111 can be improved, and particles will not be raised, thereby improving the cleanliness of the wafer during the transportation of the wafer.

[0031] Wherein, control valves are installed on both the second pipeline 124 and the third pipeline 125 .

[0032] The control valve on the second pipeline 124 can control the connection and isolation between the gas source assembly 121 and the wafer transfer port 111 , thereby preventing the wafer transfer port 111 from leaking gas from the second pipeline 124 during the wafer reaction process.

[0033] The control valve on the third pipeline 125 can control the connection and isolation of the channel between the wafer transfer port 111 and the second cavity 300. When the crystal reacts, the control valve on the third pipeline 125 is closed, thereby isolating the wafer transfer port 111 from the second cavity 300. Furthermore, during the reaction of the wafer, the impurity particles in the second cavity 300 will not enter the second cavity 300 along the third pipeline 125, so as to improve the cleanliness of the second cavity 300.

[0034] like Figure 3 and Figure 4 As shown, as an implementation manner, the number of the wafer transfer port 111 is at least one. Optionally, the number of the wafer transfer port 111 is two, and the two wafer transfer ports 111 can transport wafers at the same time, thereby improving the transportation efficiency of the wafers.

[0035] It is understandable that the number of the film transfer ports 111 may be more than two, which can be adjusted according to the number of reaction spaces in the first cavity 200 .

[0036] A plurality of through holes 1111 are provided on the inner wall of the film transmission port 111, and the ventilation pipe 122 is connected to the through holes 1111, so that the gas of the gas source component 121 can enter and be drawn out of the film transmission port 111 through the through holes 1111, thereby achieving the purging and adsorption of particulate matter in the film transmission port 111, so as to improve the cleanliness of the film transmission port 111.

[0037] Further, a plurality of branch pipes 1221 are provided at one end of the ventilation pipe 122 away from the first pipe 123, and the number of the branch pipes 1221 is the same as the number of the through holes 1111, so that each branch pipe 1221 is connected to one through hole 1111. Optionally, the number of the through holes 1111 and the number of the branch pipes 1221 on each film transmission port 111 are both two.

[0038] Furthermore, the plurality of through holes 1111 on the film transmission port 111 are evenly distributed on the inner wall of the film transmission port 111. In the process of the air source component 121 performing the purge and vacuum adsorption of the film transmission port 111 through the ventilation pipeline 122, the first pipeline 123 and the branch pipeline 1221, the film transmission port 111 can be cleaned more thoroughly through the evenly arranged through holes 1111, and there will be no dead corners for purge and adsorption, thereby improving the thoroughness of the purge and cleaning of the film transmission port 111.

[0039] As an embodiment, the air source component 121 includes an air pump connected to the second pipeline 124. The air pump has two modes: inflation and exhaust. The air pump fills and extracts gas into the film transmission port 111 through the second pipeline 124, the first pipeline 123 and the ventilation pipeline 122, thereby cleaning the film transmission port 111. At the same time, the control valve connected to the second pipeline 124 can control the connection between the air pump and the second pipeline 124, so as to facilitate the control of the connection between the air pump and the film transmission port 111 and facilitate the cleaning of the film transmission port 111 by the air pump; the control valve connected to the second pipeline 124 can also control the isolation of the air pump and the second pipeline 124, so that when adjusting the pressure difference between the film transmission port 111 and the second cavity 300, there will be no leakage of the film transmission port 111 from the second pipeline 124, thereby improving the sealing of the film transmission port 111.

[0040] As an implementation mode, the connection body 11 is welded by two stainless steel plates, and there is a gap between the two plates, so that a cooling cavity is formed inside the connection body 11, and the cooling cavity is filled with coolant, and the cooling cavity is not connected to the film transmission port 111. The coolant in the cooling cavity can cool and insulate the connection body 11, thereby reducing the temperature of the connection body 11, preventing the heat of the first cavity 200 from being transferred to the gate valve through the connection body 11, and further preventing the sealing ring on the gate valve used for sealing connection with the film transmission port 111 from being deformed due to heat, which is beneficial to improving the service life of the sealing ring of the gate valve and improving the sealing between the gate valve and the film transmission port 111.

[0041] like Figure 3 As shown, as an embodiment, a liquid inlet interface 112 and a liquid outlet interface 113 are provided on the connection body 11, and the liquid inlet interface 112 and the liquid outlet interface 113 are both connected to the cooling cavity. The coolant in the cooling cavity can be circulated and replaced through the liquid inlet interface 112 and the liquid outlet interface 113, so that the coolant in the cooling cavity can meet the use requirements, and the coolant is prevented from losing the cooling effect due to the heat conduction and heating of the first cavity 200, thereby improving the cooling effect of the connection body 11.

[0042] like Figure 2 , Figure 3 and Figure 4 As shown, as an implementation mode, the connection structure 100 for epitaxial equipment further includes a first protective plate 13 , a second protective plate 14 and a driving mechanism 15 .

[0043] The first protective plate 13 is fixedly connected to one side of the connecting body 11, and a first connecting port 131 is provided on the first protective plate 13 to communicate with the wafer transfer port 111. The robot arm can pick up a wafer from the first cavity 200 or place the wafer in the first cavity 200 through the wafer transfer port 111 and the first connecting port 131.

[0044] The second protection plate 14 is located at a side of the connection body 11 connected to the first protection plate 13 . The second protection plate 14 defines a second connection port 141 that matches the first connection port 131 .

[0045] The driving mechanism 15 is fixedly connected to the connecting body 11, and the driving mechanism 15 is transmission-connected to the second protective plate 14, so that the driving mechanism 15 can drive the second protective plate 14 to move relative to the first protective plate 13. Specifically, the second protective plate 14 can cooperate with the first protective plate 13 to form an open position and a closed position during the movement relative to the first protective plate 13.

[0046] When the second protective plate 14 is in the open position, the second connection port 141 is connected to the first connection port 131, and the second protective plate 14 can open the first connection port 131. Before the wafer reacts, the robot arm can carry the unreacted semiconductor substrate through the wafer transfer port 111, the first connection port 131 and the second connection port 141 in sequence, and place it in the reaction position in the first chamber 200 for epitaxial reaction; after the wafer reacts, the robot arm can drive the wafer through the second connection port 141, the first connection port 131 and the wafer transfer port 111 in sequence, and finally transport it to the second chamber 300 to complete the transfer.

[0047] When the second protective plate 14 is in the closed position, the second connection port 141 and the first connection port 131 are not connected. At this time, the second protective plate 14 can close the first connection port 131, thereby achieving the purpose of shielding the film transmission port 111, and avoiding the situation where a large amount of particles are accumulated at the film transmission port 111 during the wafer reaction process. In addition, the second protective plate 14 and the first protective plate 13 can isolate the connection body 11 and the film transmission port 111 from the first cavity 200, play a role in isolating the high temperature heat of the first cavity 200, and avoid the parts on the gate valve and the connection body 11 from being damaged by the high temperature, thereby improving the service life of the gate valve and the connection structure 100 for epitaxial equipment and improving the sealing between the gate valve and the film transmission port 111.

[0048] It should be noted that when the first cavity 200 is a reaction cavity and the second cavity 200 can be a transmission cavity, since the reaction cavity will generate high temperature and high pressure during operation, the first protective plate 13 is fixedly connected to the side of the connection body 11 in the first cavity 200, and the second protective plate 14 is also located on the side of the connection body 11 in the first cavity 200, so that the high temperature can be blocked by the first protective plate 13 and the second protective plate 14 to protect the gate valve located in the second cavity 300. At this time, the driving mechanism 15 is fixedly connected to the side of the connection body 11 away from the first protective plate 13, so as to avoid damage to the driving mechanism 15 due to high temperature.

[0049] It can be understood that when the first cavity 200 is a conveying cavity and the second cavity 200 is a loading cavity, the first protective plate 13, the second protective plate 14 and the driving mechanism 15 can be located on any side of the connecting body 11, that is, the first protective plate 13, the second protective plate 14 and the driving mechanism 15 can be located on the same side or different sides of the connecting body 11, but it is required that the first protective plate 13 and the second protective plate 14 are located on the same side of the connecting body 11.

[0050] like Figure 3 and Figure 5As shown, as an embodiment, the driving mechanism 15 includes a driving member 151 and an eccentric shaft 152. The driving member 151 is at least partially fixedly connected to a side of the connecting body 11 away from the first protective plate 13. One end of the eccentric shaft 152 is transmission-connected to the driving member 151, and the end of the eccentric shaft 152 away from the driving member 151 is connected to the second protective plate 14. The driving member 151 drives the eccentric shaft 152 to rotate, thereby driving the second protective plate 14 to move to the open position and the closed position. Among them, the driving member 151 can be directly connected to the eccentric shaft 152, and the driving member 151 can also be indirectly connected to the eccentric shaft 152 through a transmission member such as a belt or a chain, which is not limited in this application; the eccentric shaft 152 is an eccentric structure, so that the second protective plate 14 can move between the open position and the closed position.

[0051] Specifically, the eccentric shaft 152 includes a first connecting shaft 1521 , a second connecting shaft 1522 and a connecting rod 1523 .

[0052] The driving member 151 is in transmission connection with the first connecting shaft 1521, one end of the first connecting shaft 1521 is fixedly connected with the connecting rod 1523, one end of the connecting rod 1523 away from the first connecting shaft 1521 is fixedly connected with the second connecting shaft 1522, the first connecting shaft 1521 and the second connecting shaft 1522 extend in the same direction, and the connecting rod 1523 extends in a direction perpendicular to the second connecting shaft 1522. Through the above arrangement, the eccentric shaft 152 can drive the second protective plate 14 to move between the open position and the closed position.

[0053] When the first cavity 200 is a reaction cavity and the second cavity 200 is a transmission cavity, the first connecting shaft 1521 passes through the connecting body 11, and the first connecting shaft 1521 can rotate relative to the connecting body 11. The driving member 151 is in transmission connection with one end of the first connecting shaft 1521 in the second cavity 300, and the driving member 151 drives the first connecting shaft 1521 to rotate.

[0054] One end of the first connecting shaft 1521 in the first cavity 200 is fixedly connected to the connecting rod 1523, and one end of the connecting rod 1523 away from the first connecting shaft 1521 is fixedly connected to the second connecting shaft 1522. The second connecting shaft 1522 is rotatably connected to the second protective plate 14. The axial direction of the first connecting shaft 1521 and the axial direction of the second connecting shaft 1522 are both parallel to the conveying direction of the wafer, and the extending direction of the connecting rod 1523 is perpendicular to the axial direction of the first connecting shaft 1521 and the second connecting shaft 1522.

[0055] Furthermore, since the first connecting shaft 1521 and the second connecting shaft 1522 are connected by the connecting rod 1523, the axis of the first connecting shaft 1521 and the axis of the second connecting shaft 1522 are not colinear. The driving member 151 drives the first connecting shaft 1521 to rotate, thereby driving the second connecting shaft 1522 to rotate around the first connecting shaft 1521, and then driving the second protective plate 14 to move, so as to achieve the connection and misalignment between the second connecting port 141 on the second protective plate 14 and the first connecting port 131 on the first protective plate 13, thereby achieving the switching between the open position and the closed position.

[0056] It should be noted that, as an optional implementation, the driving member 151 can be a swing cylinder, a servo motor, etc.

[0057] It can be understood that the driving mechanism 15 can also be other transmission structures, and it is only necessary that the driving mechanism 15 can drive the second protective plate 14 to move to the open position or the closed position.

[0058] As an implementation method, the wafer conveying direction is defined as the wafer conveying direction, and along the wafer conveying direction, the first protective plate 13 is disposed between the second protective plate 14 and the connection body 11. Furthermore, the first protective plate 13 and the second protective plate 14 are both made of quartz material, and the quartz plate has a significant heat insulation effect, which can improve the heat insulation effect of the connection structure 100 for epitaxial equipment.

[0059] like Figure 2 and Figure 3 As shown, as an embodiment, the connection structure 100 for epitaxial equipment also includes an observation window 16 and a detection mechanism 19. The observation window 16 is opened on the connection body 11, and the observation window 16 is connected to the first cavity 200. The detection mechanism 19 is at least partially connected to the side of the connection body 11 away from the first protective plate 13. The detection mechanism 19 is arranged toward the observation window 16, and the detection mechanism 19 is used to detect the temperature of the first cavity 200. It should be noted that at this time, the first cavity 200 is a reaction chamber. Specifically, along the film transmission direction, the detection mechanism 19 and the observation window 16 at least partially overlap, so that the detection mechanism 19 can detect the temperature of the first cavity 200 through the observation window 16.

[0060] The observation window 16 is a circular hole formed on the connecting body 11, in which a transparent quartz plate is installed. The transparent quartz plate can isolate the first cavity 200 and facilitate the detection mechanism 19 to observe the temperature inside the first cavity 200 through the transparent quartz plate.

[0061] Further, the detection mechanism 19 includes a pyrometer, and the pyrometer is at least partially fixedly connected to the connection body 11 on one side of the second cavity 300. The temperature in the first cavity 200 will change due to the increase in temperature. The pyrometer detects the color change in the first cavity 200 to detect the temperature in the first cavity 200. At the same time, a display screen is provided on the pyrometer, and the display screen can display the temperature in the first cavity 200, so that the operator can record the temperature in the first cavity 200.

[0062] Furthermore, the pyrometer and the observation window 16 at least partially overlap along the transmission direction, so that the pyrometer can detect the color change caused by temperature in the first cavity 200 through the observation window 16, thereby facilitating the inspection personnel to observe and record the temperature in the first cavity 200.

[0063] like Figure 1 and Figure 3 As shown, as an embodiment, the connection structure 100 for epitaxial equipment further includes a connection member 17 and a positioning member 18. The connection member 17 is fixedly connected to the connection body 11, and a fixing hole 171 for connecting the first cavity 200 and the second cavity 300 is provided on the connection member 17. A fastening bolt can be installed in the fixing hole 171, so as to fix the connection body 11 and the first cavity 200, so as to achieve the fixation of the connection structure 100 for epitaxial equipment. The positioning member 18 is at least partially connected to the connection member 17, and a positioning hole 181 is provided on the positioning member 18 for positioning the connection structure 100 for epitaxial equipment and the first cavity 200. When the connection structure 100 for epitaxial equipment is installed and fixed, positioning is performed through the positioning hole 181, so as to improve the docking accuracy of the connection member 17 and the first cavity 200.

[0064] As an implementation mode, the wafer conveying direction is defined as the wafer conveying direction, the number of the connecting members 17 is two, and the connecting members 17 are distributed on both sides of the connecting body 11 in the form of hanging ears perpendicular to the wafer conveying direction. The provision of two hanging ears can make the connection between the epitaxial device connecting structure 100 and the first cavity 200 more stable, and avoid the situation where the connecting body 11 falls off the first cavity 200.

[0065] As an embodiment, the positioning member 18 is a linear bearing, and the outer wall of the linear bearing is fixedly connected to the connecting member 17. The pin shaft for positioning on the first cavity 200 can be inserted through the inner hole of the linear bearing, thereby completing the positioning of the connecting structure 100 for the epitaxial device, and the linear bearing has the freedom to move along the bearing axis, and can be smoothly inserted into the pin shaft without getting stuck.

[0066] In the present application, the working principle of the connection structure 100 for epitaxial equipment is described by taking the first cavity 200 as a reaction cavity and the second cavity 200 as a transmission cavity as an example. Specifically, the working principle of the connection structure 100 for epitaxial equipment is as follows:

[0067] Before the chip reacts, the gate valve seals the film transmission port 111 on one side of the second cavity 300, and the driving member 151 drives the first connecting shaft 1521 to rotate, thereby driving the second connecting shaft 1522 to rotate, and then driving the second protective plate 14 to move to the closed position. The second connecting port 141 is no longer connected to the first connecting port 131, so that the second protective plate 14 blocks the film transmission port 111 on the side of the first cavity 200.

[0068] During the wafer reaction process, cooling liquid is input into the cooling chamber through the liquid inlet interface 112 to cool the connection body 11 , and the cooling liquid can flow out from the liquid outlet interface 113 to achieve circulation.

[0069] After the wafer reaction is finished, the control valve on the second pipeline 124 is opened, and the gas source component 121 is connected with the through hole 1111 and the wafer transfer port 111 through the second pipeline 124, the first pipeline 123, and the ventilation pipeline 122. The gas source component 121 first inflates the wafer transfer port 111, and the particles in the wafer transfer port 111 can be lifted up during the inflation process. The gas source component 121 then switches the mode to exhaust air from the wafer transfer port 111, and the particles can be adsorbed together during the exhaust process, thereby cleaning the particles in the wafer transfer port 111, and avoiding the situation where particles are lifted up and contaminate the wafer when the gate valve is opened to connect the first cavity 200 and the second cavity 300.

[0070] After the film transfer port 111 is cleaned, the first connecting shaft 1521 is driven to rotate by the driving member 151, thereby driving the second connecting shaft 1522 to rotate, and then driving the second protective plate 14 to move to the open position, and the second connecting port 141 is connected to the first connecting port 131; at the same time, air pressure detection instruments are arranged in the first cavity 200 and the second cavity 300 to detect the pressure difference in the two chambers, and the pressure difference between the chambers on both sides is balanced by adjusting the opening and closing of the control valve on the third pipeline 125 connecting the film transfer port 111 and the second cavity 300. When the pressure difference between the chambers on both sides is at a balanced level, the gate valve is opened, and the chip in the first cavity 200 is taken out by the robotic arm through the film transfer port 111, the first connecting port 131 and the second connecting port 141.

[0071] During operation, the particles in the wafer transfer port 111 can be cleaned by purging and adsorbing the wafer transfer port 111, thereby avoiding the accumulation of a large amount of particles around the wafer transfer port 111 and improving the cleanliness of the wafer transfer port 111, thereby avoiding the situation where particles are lifted up and contaminated wafers when the gate valve is opened. At the same time, by adjusting the pressure difference between the first cavity 200 and the second cavity 300, when the gate valve is opened, the air flow turbulence caused by the excessive pressure difference on both sides will not cause the particles to be lifted up.

[0072] It should be understood that those skilled in the art can make improvements or changes based on the above description, and all these improvements and changes should fall within the scope of protection of the claims attached to this application.

Claims

1. A connection structure for epitaxial equipment, used for connecting a first cavity (200) and a second cavity (300) of the epitaxial equipment, wherein the connection structure (100) for epitaxial equipment is provided with a wafer transfer port (111) for transferring a wafer, and the wafer transfer port (111) connects the first cavity (200) and the second cavity (300); It is characterized in that The connection structure (100) for epitaxial equipment comprises: A connecting body (11) connecting the first cavity (200) and the second cavity (300), wherein the film transmission port (111) is provided on the connecting body (11); The cleaning mechanism (12) comprises an air source component (121) capable of providing and extracting gas, and a ventilation pipe (122) at least partially arranged on the connecting body (11), one end of the ventilation pipe (122) is connected to the film transmission port (111), and the end of the ventilation pipe (122) away from the film transmission port (111) is connected to the air source component (121).

2. The connection structure for epitaxial equipment according to claim 1, characterized in that: The epitaxial device connection structure (100) further comprises a first pipeline (123), a second pipeline (124) and a third pipeline (125) which are interconnected, wherein the first pipeline (123) is connected to the ventilation pipe (122), the second pipeline (124) is connected to the gas source component (121), and the third pipeline (125) is connected to the second cavity (300); The second pipeline (124) and the third pipeline (125) are both provided with control valves.

3. The connection structure for epitaxial equipment according to claim 2, characterized in that: At least one film transmission port (111) is provided, and a plurality of through holes (1111) are provided on the inner side wall of each film transmission port (111), and the plurality of through holes (1111) are connected to the ventilation duct (122); One end of the ventilation pipe (122) away from the first pipeline (123) is connected to a plurality of branch pipelines (1221), and each branch pipeline (1221) is connected to one of the through holes (1111).

4. The connection structure for epitaxial equipment according to claim 3, characterized in that: The plurality of through holes (1111) are evenly distributed on the inner side wall of the film transmission port (111).

5. The connection structure for epitaxial equipment according to claim 1, characterized in that: A cooling cavity is formed inside the connecting body (11), and the cooling cavity is filled with cooling liquid. A liquid inlet interface (112) and a liquid outlet interface (113) are provided on the connecting body (11), and the liquid inlet interface (112) and the liquid outlet interface (113) are both connected to the cooling cavity.

6. The connection structure for epitaxial equipment according to claim 1, characterized in that: The epitaxial device connection structure (100) further includes: A first protective plate (13) fixedly connected to one side of the connecting body (11), the first protective plate (13) being provided with a first connecting port (131) communicating with the film transmission port (111); a second protective plate (14), located on a side of the connecting body (11) connected to the first protective plate (13), the second protective plate (14) being provided with a second connecting port (141) adapted to the first connecting port (131); A driving mechanism (15) is fixedly connected to the connecting body (11), and the driving mechanism (15) is transmission-connected to the second protective plate (14), so that the driving mechanism (15) can drive the second protective plate (14) to move relative to the first protective plate (13), and the second protective plate (14) moves relative to the first protective plate (13) to open the first connecting port (131) or close the first connecting port (131).

7. The connection structure for epitaxial equipment according to claim 6, characterized in that: The driving mechanism (15) comprises: A driving member (151) at least partially connected to the connecting body (11); an eccentric shaft (152), one end of the eccentric shaft (152) being drivingly connected to the driving member (151), and one end of the eccentric shaft (152) away from the driving member (151) being connected to the second protective plate (14); The eccentric shaft (152) includes a first connecting shaft (1521), a second connecting shaft (1522) and a connecting rod (1523); the driving member (151) is transmission-connected to the first connecting shaft (1521); one end of the first connecting shaft (1521) is fixedly connected to the connecting rod (1523); one end of the connecting rod (1523) away from the first connecting shaft (1521) is fixedly connected to the second connecting shaft (1522); the first connecting shaft (1521) and the second connecting shaft (1522) have the same extension direction; and the extension direction of the connecting rod (1523) is perpendicular to the extension direction of the second connecting shaft (1522).

8. The connection structure for epitaxial equipment according to claim 6, characterized in that: The connection structure (100) for epitaxial equipment further comprises an observation window (16) and a detection mechanism (19) for detecting the temperature of the first cavity (200); the observation window (16) is provided on the connection body (11); the observation window (16) is in communication with the first cavity (200); the detection mechanism (19) is at least partially connected to a side of the connection body (11) away from the first protective plate (13); and the detection mechanism (19) is arranged toward the observation window (16).

9. The connection structure for epitaxial equipment according to claim 1, characterized in that: The epitaxial device connection structure (100) further includes: A connecting member (17) fixedly connected to the connecting body (11), wherein the connecting member (17) is provided with a fixing hole (171) for connecting the first cavity (200) and the second cavity (300); A positioning member (18) is at least partially connected to the connecting member (17), and the positioning member (18) is provided with a positioning hole (181) for positioning the connecting structure (100) for the epitaxial device and the first cavity (200).

10. The connection structure for epitaxial equipment according to claim 9, characterized in that: The number of the connecting members (17) is two, and the wafer conveying direction is defined as the wafer conveying direction. The two connecting members (17) are distributed on both sides of the connecting body (11) in a direction perpendicular to the wafer conveying direction.

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