Pressure sensor packaging structure

Abstract

The utility model discloses a pressure sensor packaging structure, and relates to the pressure sensor production technology field, the structure comprises a ceramic substrate, a pressure chip, a conditioning chip and a metal housing, the ceramic substrate comprises a substrate first surface and a substrate second surface, the pressure chip and the conditioning chip are both arranged on the substrate first surface, the pressure chip is arranged on the substrate second surface, and the conditioning chip is arranged on the substrate second surface. The surface of the first surface of the substrate is provided with a shell connecting area, the shell connecting area and the inner wall of the metal shell form a cavity, the upper surface of the metal shell is provided with a through hole, the first surface of the substrate is also provided with a first surface bonding pad of the substrate, the bonding pad is respectively connected with the pressure chip and the conditioning chip, the second surface of the substrate is provided with a second surface terminal bonding pad of the substrate, and the pressure chip and the conditioning chip are respectively connected with the through hole. The substrate first surface pad and the substrate second surface terminal pad are connected to each other. The packaging structure provided by the utility model is simple in structure, small in size, wide in use temperature range and stable in performance, and compared with a traditional packaging form, the packaging structure can reduce the influence of packaging of chips with the same size on the performance.

Description

Technical Field

[0001] The utility model relates to the technical field of pressure sensor production, in particular to a pressure sensor packaging structure. Background Art

[0002] A pressure sensor is a device or component that can sense pressure signals and convert them into usable outputs. It is usually composed of sensitive elements and signal processing units. In industrial practice, pressure sensors are often widely used in various automatic control environments such as railway transportation, production automation, aerospace, pipelines and other industries. Packaging is a post-process in the manufacturing process of pressure sensors. It mainly provides electrical interconnection, mechanical support, mechanical and environmental protection and thermal conduction channels between the pressure chip and the printed circuit board. The packaging structure and method play a vital role in whether the pressure chip can exert its own performance. The packaging will affect the chip performance, thereby affecting the stability of the pressure sensor.

[0003] Based on this, a pressure sensor packaging structure is now provided, which can eliminate the disadvantages of the existing structure. Utility Model Content

[0004] The utility model aims to provide a pressure sensor packaging structure to solve the problem of reducing the impact of the packaging structure and method of the pressure chip on the performance.

[0005] In order to achieve the above purpose, the utility model provides the following technical solutions:

[0006] A pressure sensor packaging structure includes a ceramic substrate, a pressure chip, a conditioning chip and a metal shell, wherein the ceramic substrate includes a first surface of the substrate and a second surface of the substrate, wherein the pressure chip and the conditioning chip are both arranged on the first surface of the substrate, wherein the surface of the first surface of the substrate is provided with a shell connection area for connecting to the metal shell, and forms a cavity with the inner wall of the metal shell, wherein a through hole is provided on the upper surface of the metal shell, wherein the first surface of the substrate is also provided with a substrate first surface welding pad, wherein the welding pad is respectively connected to the pressure chip and the conditioning chip, wherein the second surface of the substrate is provided with a substrate second surface terminal welding pad for external welding, wherein the substrate first surface welding pad and the substrate second surface terminal welding pad are mutually connected.

[0007] Preferably, the pressure chip includes an IN+ solder point, an IN- solder point, an OUT+ solder point and an OUT- solder point, and the IN+ solder point, IN- solder point, OUT+ solder point and OUT- solder point are arranged in sequence from left to right.

[0008] Preferably, the conditioning chip includes a VDD solder point, a CSB solder point, a VPP solder point, an SDI solder point, an SCK solder point, an SDO solder point, an EXC1 solder point, an EXC2 solder point, a VDDIO solder point, a CINIP solder point, a CININ solder point, a first GND solder point and a second GND solder point, and the VDD solder point, the CSB solder point, the VPP solder point, the SDI solder point, the SCK solder point, the SDO solder point, the first GND solder point and the second GND solder point are arranged in sequence along the direction close to the pressure chip, and the CINIP solder point, the CININ solder point, the EXC1 solder point, the EXC2 solder point and the VDDIO solder point are arranged in sequence along the direction close to the second GND solder point.

[0009] Preferably, there are 8 pads on the first side of the substrate, including a VDD pad, a CSB pad, a VPP pad, an SCL pad, a GND pad, an SDA pad, an SDO pad and a VDDIO pad, the VPP pad, the GND pad and the VDDIO pad are arranged on the side away from the conditioning chip, and the VDD pad, the CSB pad, the SCL pad, the SDA pad and the SDO pad are arranged on the side close to the conditioning chip.

[0010] Preferably, there are 9 terminal pads on the second side of the substrate, including a VDD terminal pad, a first GND terminal pad, a VDDIO terminal pad, an SDO terminal pad, a VPP terminal pad, a second GND terminal pad, a CSB terminal pad, an SDA terminal pad and an SCL terminal pad. The VDD terminal pad, the first GND terminal pad, the VDDIO terminal pad and the SDO terminal pad are arranged on the left side of the terminal pads on the second side of the substrate, the second GND terminal pad, the CSB terminal pad, the SDA terminal pad and the SCL terminal pad are arranged on the right side of the terminal pads on the second side of the substrate, and the VPP terminal pad is arranged on the side close to the second GND terminal pad.

[0011] Preferably, the VDD pad is connected to the VDD terminal pad, the CSB pad is connected to the CSB terminal pad, the VPP pad is connected to the VPP terminal pad, the SCL pad is connected to the SCL terminal pad, the GND pad is connected to the first GND terminal pad and the second GND terminal pad, the SDA pad is connected to the SDA terminal pad, the SDO pad is connected to the SDO terminal pad, and the VDDIO pad is connected to the VDDIO terminal pad.

[0012] Preferably, the CSB solder point is connected to the CSB pad through a gold wire, the VPP solder point is connected to the VPP pad through a gold wire, the SDI solder point is connected to the SDA pad through a gold wire, the SCK solder point is connected to the SCL pad through a gold wire, the SDO solder point is connected to the SDO pad through a gold wire, the EXC1 solder point is connected to the IN+ solder point through a gold wire, the VDDIO solder point is connected to the VDDIO pad through a gold wire, the CINIP solder point is connected to the OUT+ solder point through a gold wire, the CININ solder point is connected to the OUT- solder point through a gold wire, the first GND solder point is connected to the IN- solder point through a gold wire, and the second GND solder point is connected to the GND pad through a gold wire.

[0013] Preferably, the thickness of the ceramic substrate is 1 to 1.2 mm.

[0014] Preferably, the width of the terminal pad on the second surface of the substrate is 1 to 1.4 mm, and the length of the terminal pad on the second surface of the substrate is 2 to 2.2 mm.

[0015] Preferably, the material of the metal shell is SUS316 stainless steel, the inner cavity diameter of the metal shell is 6.5-6.6 mm, and the inner cavity height of the metal shell is 2.5-2.7 mm.

[0016] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0017] The utility model has a simple structure, small size, wide operating temperature range and stable performance. Compared with traditional packaging forms, it can reduce the impact of chip packaging of the same size on the performance. The circuit board uses a sintered ceramic plate with an alumina component, which reduces the deformation of the ceramic substrate in high and low temperature environments and improves stability. The circuit design of the ceramic substrate is simple, which not only reduces the production cost of the pressure sensor, but also effectively improves the production efficiency. The conditioning chip and the pressure chip are fixed to the ceramic substrate by glue, and the cavity has a greater space advantage. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a three-dimensional diagram of the packaging structure of the utility model.

[0019] Figure 2 It is a cross-sectional view of the packaging structure of the present utility model.

[0020] Figure 3 This is a schematic diagram of the first surface structure of the substrate of the packaging structure of the present invention.

[0021] Figure 4 It is a schematic diagram of the second surface structure of the substrate of the packaging structure of the utility model.

[0022] Figure numerals: 1. Ceramic substrate; 2. First side of substrate; 3. Second side of substrate; 4. Shell connection area; 5. Metal shell; 6. Cavity; 7. Through hole; 8. IN+ solder joint; 9. IN- solder joint; 10. OUT+ solder joint; 11. OUT- solder joint; 12. VDD solder joint; 13. CSB solder joint; 14. VPP solder joint; 15. SDI solder joint; 16. SCK solder joint; 17. SDO solder joint; 18. EXC1 solder joint; 19. EXC2 solder joint; 20. VDDIO solder joint; 21. CINIP solder joint; 22. CININ solder joint; 23. First GND solder joint point; 24, the second GND pad; 25, VDD pad; 26, CSB pad; 27, VPP pad; 28, SCL pad; 29, GND pad; 30, SDA pad; 31, SDO pad; 32, VDDIP pad; 33, VDD terminal pad; 34, the first GND terminal pad; 35, VDDIO terminal pad; 36, SDO terminal pad; 37, VPP terminal pad; 38, the second GND terminal pad; 39, CSB terminal pad; 40, SDA terminal pad; 41, SCL terminal pad; 42, pressure chip; 43, conditioning chip. DETAILED DESCRIPTION

[0023] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments.

[0024] Example 1

[0025] In this embodiment, if Figure 1-Figure 4 As shown, a pressure sensor packaging structure includes a ceramic substrate 1, a pressure chip 42, a conditioning chip 43 and a metal shell 5. The ceramic substrate 1 includes a first surface 2 of the substrate and a second surface 3 of the substrate. The ceramic substrate 1 is made of a sintered ceramic plate with an alumina component, which enhances the dielectric compatibility of the circuit board, so that the influence of deformation at high and low temperatures on the performance of the pressure sensor can be minimized. The pressure chip 42 and the conditioning chip 43 are both arranged on the first surface 2 of the substrate. The surface of the first surface 2 of the substrate is provided with a shell connection area 4 for connecting to the metal shell 5, and a cavity 6 is formed with the inner wall of the metal shell 5. A through hole 7 is opened on the upper surface of the metal shell 5. The first surface 2 of the substrate is also provided with a first surface pad of the substrate, and the pads are respectively connected to the pressure chip 42 and the conditioning chip 43. The second surface 3 of the substrate is provided with a second surface terminal pad of the substrate for external welding, and the first surface pad of the substrate is connected to the second surface terminal pad of the substrate. The conditioning chip 43 and the pressure chip 42 are fixed to the ceramic substrate 1 by glue, so that the cavity 6 inside the metal shell 5 has a greater space advantage.

[0026] Among them Figure 4As shown, the pressure chip 42 includes an IN+ solder joint 8, an IN- solder joint 9, an OUT+ solder joint 10, and an OUT- solder joint 11, and the IN+ solder joint 8, the IN- solder joint 9, the OUT+ solder joint 10, and the OUT- solder joint 11 are arranged in sequence from left to right;

[0027] Among them Figure 3 As shown, the conditioning chip 43 includes a VDD solder joint 12, a CSB solder joint 13, a VPP solder joint 14, an SDI solder joint 15, an SCK solder joint 16, an SDO solder joint 17, an EXC1 solder joint 18, an EXC2 solder joint 19, a VDDIO solder joint 20, a CINIP solder joint 21, a CININ solder joint 22, a first GND solder joint 23 and a second GND solder joint 24, and the VDD solder joint 12, the CSB solder joint 13, the VPP solder joint 14, the SDI solder joint 15, the SCK solder joint 16, the SDO solder joint 17, the first GND solder joint 23 and the second GND solder joint 24 are arranged in sequence along a direction close to the pressure chip 42, and the CINIP solder joint 21, the CININ solder joint 22, the EXC1 solder joint 18, the EXC2 solder joint 19, and the VDDIO solder joint 20 are arranged in sequence along a direction close to the second GND solder joint 24;

[0028] Among them Figure 3 As shown, there are 8 pads on the first side of the substrate, including a VDD pad 25, a CSB pad 26, a VPP pad 27, an SCL pad 28, a GND pad 29, an SDA pad 30, an SDO pad 31 and a VDDIO pad 32. The VPP pad 27, the GND pad 29 and the VDDIO pad 32 are arranged on a side away from the conditioning chip 43, and the VDD pad 25, the CSB pad 26, the SCL pad 28, the SDA pad 30 and the SDO pad 31 are arranged on a side close to the conditioning chip 43.

[0029] Among them Figure 3 and Figure 4 As shown, there are 9 terminal pads on the second side of the substrate, including a VDD terminal pad 33, a first GND terminal pad 34, a VDDIO terminal pad 35, an SDO terminal pad 36, a VPP terminal pad 37, a second GND terminal pad 38, a CSB terminal pad 39, an SDA terminal pad 40 and an SCL terminal pad 41, the VDD terminal pad 33, the first GND terminal pad 34, the VDDIO terminal pad 35 and the SDO terminal pad 36 are arranged on the left side of the terminal pads on the second side of the substrate, the second GND terminal pad 38, the CSB terminal pad 39, the SDA terminal pad 40 and the SCL terminal pad 41 are arranged on the right side of the terminal pads on the second side of the substrate, and the VPP terminal pad 37 is arranged on the side close to the second GND terminal pad 38;

[0030] Among them Figure 3 and Figure 4As shown, the VDD pad 25 is connected to the VDD terminal pad 33, the CSB pad 26 is connected to the CSB terminal pad 39, the VPP pad 27 is connected to the VPP terminal pad 37, the SCL pad 28 is connected to the SCL terminal pad 41, the GND pad 29 is connected to the first GND terminal pad 34 and the second GND terminal pad 38, the SDA pad 30 is connected to the SDA terminal pad 40, the SDO pad 31 is connected to the SDO terminal pad 36, and the VDDIO pad 32 is connected to the VDDIO terminal pad 35. The pressure sensor packaging structure has the advantage of saving space when used by directly welding the terminal pads on the second surface of the main board and the substrate;

[0031] Among them Figure 3 and Figure 4 As shown, the CSB solder joint 13 is connected to the CSB solder pad 26 through a gold wire, the VPP solder joint 14 is connected to the VPP solder pad 27 through a gold wire, the SDI solder joint 15 is connected to the SDA solder pad 30 through a gold wire, the SCK solder joint 16 is connected to the SCL solder pad 28 through a gold wire, the SDO solder joint 17 is connected to the SDO solder pad 31 through a gold wire, the EXC1 solder joint 18 is connected to the IN+ solder joint 8 through a gold wire, the VDDIO solder joint 20 is connected to the VDDIO solder pad 32 through a gold wire, the CINIP solder joint 21 is connected to the OUT+ solder joint 10 through a gold wire, the CININ solder joint 22 is connected to the OUT- solder joint 11 through a gold wire, the first GND solder joint 23 is connected to the IN- solder joint 9 through a gold wire, and the second GND solder joint 24 is connected to the GND solder pad 29 through a gold wire. By optimizing the solder pads on the first side of the substrate, the terminal solder pads on the second side of the substrate, and the connection method with the chip, the structure is simplified, the impact of the package on the chip performance is reduced, and the stability of the performance is improved;

[0032] Example 2

[0033] The difference from Example 1 is that Figure 1 As shown, the thickness of the ceramic substrate 1 is 1 to 1.2 mm, and the circuit design of the ceramic substrate 1 is simple, which reduces the production cost of the pressure sensor;

[0034] Among them Figure 1 As shown, the width of the terminal pad on the second side of the substrate is 1 to 1.4 mm, and the length of the terminal pad on the second side of the substrate is 2 to 2.2 mm;

[0035] Among them Figure 2 As shown, the material of the metal shell 5 is SUS316 stainless steel, the inner cavity diameter of the metal shell 5 is 6.5-6.6 mm, and the inner cavity height of the metal shell 5 is 2.5-2.7 mm. The pressure sensor packaging structure has a simple structure, a small volume, and good performance stability.

[0036] The above are only specific embodiments of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present disclosure, which should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims

1. A pressure sensor packaging structure, comprising a ceramic substrate (1), a pressure chip (42), a conditioning chip (43) and a metal shell (5), characterized in that: The ceramic substrate (1) comprises a first surface (2) and a second surface (3) of the substrate. The pressure chip (42) and the conditioning chip (43) are both arranged on the first surface (2) of the substrate. The surface of the first surface (2) of the substrate is provided with a shell connection area (4) for connecting to a metal shell (5), and forms a cavity (6) with the inner wall of the metal shell (5). A through hole (7) is opened on the upper surface of the metal shell (5). The first surface (2) of the substrate is also provided with a first surface soldering pad of the substrate, and the soldering pad is respectively connected to the pressure chip (42) and the conditioning chip (43). The second surface (3) of the substrate is provided with a second surface terminal soldering pad of the substrate for external welding, and the first surface soldering pad of the substrate is connected to the second surface terminal soldering pad of the substrate.

2. The pressure sensor packaging structure according to claim 1, characterized in that: The pressure chip (42) includes an IN+ solder point (8), an IN- solder point (9), an OUT+ solder point (10) and an OUT- solder point (11), and the IN+ solder point (8), the IN- solder point (9), the OUT+ solder point (10) and the OUT- solder point (11) are arranged in sequence from left to right.

3. The pressure sensor packaging structure according to claim 1, characterized in that: The conditioning chip (43) comprises a VDD solder point (12), a CSB solder point (13), a VPP solder point (14), an SDI solder point (15), an SCK solder point (16), an SDO solder point (17), an EXC1 solder point (18), an EXC2 solder point (19), a VDDIO solder point (20), a CINIP solder point (21), a CININ solder point (22), a first GND solder point (23) and a second GND solder point (24), wherein the VDD solder point (12), the CSB solder point (13), the VPP solder point (14), the SDI solder point (15), the SCK solder point (16), the SDO solder point (17), the EXC1 solder point (18), the EXC2 solder point (19), the VDDIO solder point (20), the CINIP solder point (21), the CININ solder point (22), the first GND solder point (23) and the second GND solder point (24). The voltage point (13), the VPP solder point (14), the SDI solder point (15), the SCK solder point (16), the SDO solder point (17), the first GND solder point (23) and the second GND solder point (24) are arranged in sequence along a direction close to the pressure chip (42); and the CINIP solder point (21), the CININ solder point (22), the EXC1 solder point (18), the EXC2 solder point (19) and the VDDIO solder point (20) are arranged in sequence along a direction close to the second GND solder point (24).

4. The pressure sensor packaging structure according to claim 1, characterized in that: The first surface of the substrate is provided with 8 pads, including a VDD pad (25), a CSB pad (26), a VPP pad (27), an SCL pad (28), a GND pad (29), an SDA pad (30), an SDO pad (31) and a VDDIO pad (32); the VPP pad (27), the GND pad (29) and the VDDIO pad (32) are arranged on a side away from the conditioning chip (43); and the VDD pad (25), the CSB pad (26), the SCL pad (28), the SDA pad (30) and the SDO pad (31) are arranged on a side close to the conditioning chip (43).

5. The pressure sensor packaging structure according to claim 1, characterized in that: The second surface terminal pads of the substrate are provided with 9, including a VDD terminal pad (33), a first GND terminal pad (34), a VDDIO terminal pad (35), an SDO terminal pad (36), a VPP terminal pad (37), a second GND terminal pad (38), a CSB terminal pad (39), an SDA terminal pad (40) and an SCL terminal pad (41); the VDD terminal pad (33), the first GND terminal pad (34), the VDDIO terminal pad (35) and the SDO terminal pad (36) are provided on the left side of the terminal pads on the second surface of the substrate; the second GND terminal pad (38), the CSB terminal pad (39), the SDA terminal pad (40) and the SCL terminal pad (41) are provided on the right side of the terminal pads on the second surface of the substrate; and the VPP terminal pad (37) is provided on a side close to the second GND terminal pad (38).

6. The pressure sensor packaging structure according to claim 4, characterized in that: The VDD pad (25) is connected to a VDD terminal pad (33), the CSB pad (26) is connected to a CSB terminal pad (39), the VPP pad (27) is connected to a VPP terminal pad (37), the SCL pad (28) is connected to an SCL terminal pad (41), the GND pad (29) is connected to a first GND terminal pad (34) and a second GND terminal pad (38), the SDA pad (30) is connected to an SDA terminal pad (40), the SDO pad (31) is connected to an SDO terminal pad (36), and the VDDIO pad (32) is connected to a VDDIO terminal pad (35).

7. The pressure sensor packaging structure according to claim 3, characterized in that: The CSB solder joint (13) is connected to the CSB solder pad (26) via a gold wire, the VPP solder joint (14) is connected to the VPP solder pad (27) via a gold wire, the SDI solder joint (15) is connected to the SDA solder pad (30) via a gold wire, the SCK solder joint (16) is connected to the SCL solder pad (28) via a gold wire, the SDO solder joint (17) is connected to the SDO solder pad (31) via a gold wire, and the EXC1 solder joint (18) is connected to the IN+ pin via a gold wire. The first GND solder point (23) is connected to the IN- solder point (9) through a gold wire, the second GND solder point (24) is connected to the GND solder pad (29) through a gold wire.

8. The pressure sensor packaging structure according to claim 1, characterized in that: The thickness of the ceramic substrate (1) is 1 to 1.2 mm.

9. The pressure sensor packaging structure according to claim 1, characterized in that: The width of the terminal pad on the second surface of the substrate is 1 to 1.4 mm, and the length of the terminal pad on the second surface of the substrate is 2 to 2.2 mm.

10. The pressure sensor packaging structure according to claim 1, characterized in that: The material of the metal shell (5) is SUS316 stainless steel, the inner cavity diameter of the metal shell (5) is 6.5-6.6 mm, and the inner cavity height of the metal shell (5) is 2.5-2.7 mm.

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