Processing device for chemically-assisted laser polishing diamond

Abstract

The utility model discloses a processing device for chemically assisting laser polishing diamond, which comprises a container and a rotating platform, the rotating platform is horizontally distributed in the container, the rotating platform is connected with a rotating shaft, the rotating shaft penetrates out of the bottom of the container and is rotatably connected onto a base, and the rotating platform is used for loading the diamond. The ejector is located at the center position over the rotating platform and used for positively ejecting a chemical solution to the center position of the diamond so that a water flow layer can be formed on the surface of the diamond, the laser is located beside the ejector and used for emitting a laser beam, and the reflector is arranged in front of the laser and used for reflecting the laser beam. The reflector is used for reflecting a laser beam emitted from the laser into the focusing lens, the focusing lens is used for focusing the laser beam, and the laser beam is incident to a water flow layer at an inclined angle. According to the utility model, a chemical solution can form a stable water flow layer on the upper surface of the diamond, laser is totally reflected on the water flow layer, the polishing area is enlarged, the polishing efficiency is improved, and the surface smoothness of the diamond is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of laser processing, in particular to a processing device for chemically assisted laser polishing diamond. Background Art

[0002] Diamond is widely used in wear-resistant parts, electronic devices, optical windows and other fields. However, due to the unevenness and large roughness of the directly prepared diamond surface, it usually needs to be polished to meet the use standards. Traditional polishing methods pose challenges to the hardness and brittleness of diamonds. Laser polishing has become an ideal choice for polishing diamond surfaces with its high efficiency and precise processing characteristics.

[0003] Laser polishing is mainly divided into hot polishing and cold polishing. Hot polishing has a fast processing rate and high efficiency, but its disadvantage is that it will accumulate heat on the material surface, resulting in increased thermal stress on the material surface, which can easily cause surface cracks and poor smoothness. Cold polishing produces a smaller heat-affected zone, almost no cracks on the polished surface, and the amount of material removal is easy to control, but its disadvantages are low processing efficiency and slow processing rate, which is not conducive to polishing a large area in a short time. Utility Model Content

[0004] The purpose of the utility model is to overcome the shortcomings of the above-mentioned prior art and provide a processing device for chemically assisted laser polishing diamond, which can form a stable water flow layer on the upper surface of the diamond with a chemical solution, so that the laser is totally reflected in the water flow layer, thereby expanding the polishing area, improving the polishing efficiency, realizing chemically assisted laser polishing of diamond, and improving the smoothness of the diamond surface.

[0005] The utility model is realized by the following technical scheme: a chemically assisted laser polishing diamond processing device, comprising:

[0006] A container, wherein a water outlet is provided at the bottom of the container;

[0007] A rotating platform, the rotating platform is horizontally distributed in the container, the rotating platform is connected to a rotating shaft, the rotating shaft passes through the bottom of the container and is rotatably connected to the base, and the rotating platform is used to load diamonds;

[0008] An injector, the injector is located at the center position just above the rotating platform, and the injector is used to spray the chemical solution forward to the center position of the diamond to form a water flow layer on the surface of the diamond;

[0009] A laser, the laser being located beside the ejector and being used for emitting a laser beam;

[0010] A reflector is arranged in front of the laser, and is used to reflect the laser beam emitted from the laser into a focusing lens, and the focusing lens is used to focus the laser beam, and the laser beam is incident on the water flow layer at an inclined angle.

[0011] Furthermore, the incident angle of the laser beam ranges from 5° to 40°.

[0012] Furthermore, the rotation speed of the rotating platform is 10rpm-1000rpm.

[0013] Furthermore, the thickness of the water flow layer is 0.4 mm-12 mm.

[0014] Furthermore, the water pressure range of the ejector is 0.1Mpa-20Mpa, and the flow rate is 1mL / s-1000mL / s.

[0015] Furthermore, the chemical solution is any one of potassium hydroxide solution, sodium hydroxide solution, and barium hydroxide solution.

[0016] Furthermore, the radius of the container is R1, 30 mm≦R1≦100 mm, and the height of the container is H1, 10 mm≦H1≦50 mm.

[0017] Furthermore, the rotating platform is an oblate cylindrical structure with a radius of R2, 10mm≦R2≦70mm.

[0018] Furthermore, the water outlet is provided with a valve, the diameter of the water outlet is D, 0.1mm≦D≦2mm, the length of the water outlet is H2, 5mm≦H2≦10mm, and the flow rate of the water outlet is 10mL / s-1000mL / s.

[0019] Compared with the prior art, the utility model has the following beneficial effects:

[0020] 1. The utility model controls the rotation of the rotating platform to adsorb the diamond on the rotating platform, and sprays the chemical solution to the center of the diamond surface through the injector to form a stable water flow layer. The thickness of the water flow layer is limited by controlling the rotation speed of the rotating platform. When the water flow layer is thin, a restriction layer can be formed, so that the laser is fully reflected in the restriction layer, thereby expanding the polishing area, improving the polishing efficiency, and reducing the thermal effect.

[0021] 2. The utility model adopts a chemical solution containing hydroxide. On the basis of the initial laser polishing of diamond, the chemical solution containing hydroxide can react with the modified diamond under heating conditions, further improving the smoothness of the diamond surface and optimizing the processing effect.

[0022] 3. The utility model adopts a high-power connected laser, which significantly shortens the polishing time of diamond, improves the polishing efficiency, and is conducive to realizing large-scale and large-volume polishing work. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a schematic diagram of the structure of the utility model;

[0024] Figure 2 Dimensioning diagram for this;

[0025] Figure 3 Schematic diagram of vertical processing of chemically assisted laser polishing diamond in comparative example 1;

[0026] Figure 4 Schematic diagram of the processing of pure laser polished diamond in comparative example 2;

[0027] Figure 5 This is a comparison chart of polishing effects.

[0028] Explanation of the reference numerals: 1-container, 2-water outlet, 3-rotating platform, 4-rotating axis, 5-substrate, 6-injector, 7-chemical solution, 8-water flow layer, 9-laser, 10-laser beam, 11-reflector, 12-focusing lens, 13-diamond, R1-radius of the container, R2-radius of the rotating platform, H1-height of the container, D-diameter of the water outlet, H2-length of the water outlet. DETAILED DESCRIPTION

[0029] Reference Figure 1 and Figure 2 , a chemically assisted laser polishing diamond processing device, comprising:

[0030] The container 1 has a water outlet 2 at its bottom.

[0031] The rotating platform 3 is horizontally distributed in the container 1 . The rotating platform 3 is connected to a rotating shaft 4 . The rotating shaft 4 passes through the bottom of the container 1 and is rotatably connected to the base 5 . The rotating platform 3 is used to load the diamonds 13 .

[0032] The injector 6 is located at the center position just above the rotating platform 3 . The injector 6 is used to inject the chemical solution 7 forward to the center position of the diamond 13 , so that a water flow layer 8 is formed on the surface of the diamond 13 .

[0033] A laser 9 is located beside the injector 6 , and is used to emit a laser beam 10 .

[0034] The reflector 11 is arranged in front of the laser 9. The reflector 11 is used to reflect the laser beam 10 emitted from the laser 9 into the focusing lens 12. The focusing lens 12 is used to focus the laser beam 10. The laser beam 10 is incident on the water flow layer 8 at an inclined angle.

[0035] The diamond 13 is adhered to the rotating platform 3 .

[0036] The base 5 is made of a heat-non-conductive material such as plastic, aerogel or silicone rubber. In the present embodiment, the base 5 is made of plastic, which has good toughness, is not easily deformed, and is easy to fix on a horizontal platform. The base 5 is used to support the rotating platform 3 to ensure that the entire device can be placed horizontally.

[0037] The incident angle of the laser beam 10 ranges from 5° to 40°.

[0038] The rotation speed of the rotating platform 3 is 10 rpm-1000 rpm.

[0039] The thickness of the water flow layer 8 is 0.4 mm to 12 mm.

[0040] The water pressure range of the ejector 6 is 0.1Mpa-20Mpa, and the flow rate is 1mL / s-1000mL / s.

[0041] The chemical solution 7 is any one of potassium hydroxide solution, sodium hydroxide solution, and barium hydroxide solution.

[0042] The chemical solution 7 may also be a transparent chemical solution containing hydroxide ions.

[0043] The radius of the container 1 is R1, 30 mm≦R1≦100 mm, and the height of the container 1 is H1, 10 mm≦H1≦50 mm.

[0044] The rotating platform 3 is in the form of an oblate cylindrical structure, with a radius of R2, 10 mm ≤ R2 ≤ 70 mm.

[0045] The water outlet 2 is provided with a valve, the diameter of the water outlet 2 is D, 0.1mm≦D≦2mm, the length of the water outlet 2 is H2, 5mm≦H2≦10mm, and the flow rate of the water outlet 2 is 10mL / s-1000mL / s.

[0046] The laser 9 may be a YAG laser or a QCW laser.

[0047] The pulse half-width of the laser beam 10 ranges from 500ns to continuous, the power range of the laser beam emitted by the laser 9 is about 50W to 2000W, the frequency range of the laser beam emitted by the laser 9 is about 0.1kHz to 1MHz, the spot diameter range of the laser beam emitted by the laser 9 is about 10μm to 500μm, the scanning speed range of the laser is about 0.1mm / s to 100mm / s, and the energy distribution of the pulse laser is Gaussian distribution or flat-top distribution.

[0048] When polishing the diamond, firstly, the diamond 13 is adsorbed on the rotating platform 3, and the chemical solution 7 is sprayed to the center of the rotating platform 3 through the nozzle of the injector 6. When the rotating platform 3 rotates, the diamond 13 rotates relative to the rotating platform 3, and the chemical solution 7 is sprayed to the surface of the rotating diamond 13 in the form of a fine water column. The chemical solution 7 forms a stable water flow layer 8 on the surface of the diamond 13. At this time, the laser 9 starts to work, and the emitted laser beam 10 passes through the reflector 11 and the focusing lens 12, and is shot into the stable water flow layer 8 with specific parameters and is totally reflected, so as to heat the diamond 13 and the chemical solution 7 in the container 1, and polish the surface of the diamond 13.

[0049] The chemical solution 7 forms a stable water flow layer 8 on the surface of the diamond 13. The formation of the water flow layer 8 can not only make the surface of the diamond 13 uniformly covered, but also help stabilize the laser processing process. When the laser beam 10 is incident on the water flow layer 8 at a specific angle, the total reflection effect of light can be exerted. This effect not only enables the laser to be fully utilized, expands the processing area and efficiency, but also effectively reduces the interference of thermal effects on the polishing effect, and significantly reduces the roughness of the surface of the diamond 13. At the same time, since the chemical solution 7 contains hydroxide, the diamond 13 is a crystal structure composed of carbon elements, and the hydroxide has strong oxidizing properties. Under heating conditions, the hydroxide contained in the chemical solution 7 reacts with the carbon bonds of the diamond 13 to form carbon oxides or destroy part of the carbon bonds, thereby changing the chemical properties of the diamond surface. This chemical action complements the laser polishing and acts together on the diamond surface, which can effectively improve the polishing effect and the efficiency of polishing, and achieve the goal of chemical reagent-assisted laser polishing of diamonds efficiently.

[0050] In the process of spraying the chemical solution 7 onto the diamond 13 , the liquid flowing down from the surface of the diamond 13 flows into the container 1 from the edge of the diamond 13 and flows out through the water outlet 2 .

[0051] In this embodiment, the processed diamond 13 is approximately 10×10×0.5 mm 3The rectangular parallelepiped has a rotation speed of 200 rpm, a rotation direction of clockwise, or a rotation direction of counterclockwise, a radius R2 of the rotating platform 3 = 50 mm, a total height of the rotating platform 3 plus the rotating shaft 4 is 50 mm, a height H1 of the container 1 = 50 mm, a radius R1 of the container 1 = 80 mm, a water pressure of the ejector 6 is 3 MPa, a flow rate of 500 mL / s, a length H2 of the water outlet 2 = 10 mm, a diameter D = 0.2 mm, and a focusing lens 12 is a biconvex type.

[0052] The laser 9 used is a YAG laser that emits continuous laser light and can perform continuous thermal polishing on the diamond surface. The continuous laser scanning parameters are: power of about 1000W, focus spot diameter of about 100um, scanning speed of about 0.1mm / s, and energy distribution of the continuous laser is Gaussian distribution.

[0053] The diamond processing device is not only suitable for polishing the surface of diamond, but also has potential application prospects in the polishing of surfaces of semiconductors, ceramics, cemented carbide and composite materials in the fields of new energy, smart grid, aerospace and electronic manufacturing.

[0054] The workflow of the utility model comprises the following steps:

[0055] S1. Adsorb the diamond on the rotating platform, turn on the injector, and spray the chemical solution to the center of the diamond. At the same time, control the rotating platform to rotate at a certain speed.

[0056] S2. After a stable water flow layer is formed on the upper surface of the diamond, turn on the laser, adjust the energy, incident angle, and focal position of the laser beam, so that the laser beam is incident on the stable water flow layer at a specific angle.

[0057] S3. The laser beam heats and promotes the reaction of chemical solutions in a stable water flow layer, polishing the diamond in the horizontal direction.

[0058] The arithmetic average surface roughness of the diamond surface before processing is 6.455um. The surface roughness of the diamond after processing is not only better than the roughness before polishing, but also better than the surface roughness of the diamond after polishing in Comparative Examples 1 and 2.

[0059] Comparative Example 1

[0060] This comparative example refers to the processing device and polishing method of the embodiment, but the difference between this comparative example and the embodiment is that the processing device is placed vertically, and the chemical solution flow sprayed by the injector is just tangent to the diamond surface, but cannot form a stable laminar flow. The oblique incident laser cannot have a total reflection effect, and other processing parameters and processing devices remain unchanged. The specific structure and placement of the device are as follows Figure 4As shown. Since the ejected chemical solution cannot form a stable laminar flow on the diamond surface, the obliquely incident laser chemical solution cannot undergo total reflection. Although this processing method has chemically assisted polishing of the diamond surface, it cannot expand the laser processing area, reducing the processing efficiency. After polishing the diamond surface with a vertical polishing processing device, the arithmetic mean surface roughness of the diamond surface is approximately 0.774μm. The processing effect is not as good as the result of using a chemically assisted laser horizontal polishing device in the embodiment, but is worse than the result of pure laser polishing in Comparative Example 2.

[0061] Comparative Example 2

[0062] This comparative example refers to the horizontal processing device and polishing method of the embodiment, but the difference between this comparative example and the embodiment is that the processing device does not use chemical reagents to assist in polishing the diamond surface, only pure laser polishing is used, and other processing parameters remain unchanged. The specific structure and placement of the device are as follows Figure 5 As shown. Although this method of pure laser polishing has a fast processing rate, due to the lack of the assistance of chemical solution, the laser accumulates heat on the diamond surface, increases the thermal stress on the diamond surface, causes thermal damage to the workpiece, and easily generates cracks on the diamond surface. Due to the lack of cooling and flushing effects of the water jet, the molten material after laser ablation adheres to the processed surface, reducing the uniformity of polishing and also reducing the smoothness of the surface. After polishing the diamond surface with a pure laser polishing processing device, the arithmetic mean surface roughness of the diamond surface is about 1.006μm. The processing effect is not as good as the result of using a chemically assisted laser horizontal polishing device in the embodiment, nor as good as the result of using a chemically assisted vertical processing device in Comparative Example 1.

[0063] The above detailed description is a specific description of a feasible embodiment of the utility model. The embodiment is not intended to limit the patent scope of the utility model. Any equivalent implementation or modification that does not deviate from the utility model should be included in the patent scope of this case.

Claims

1. A chemically assisted laser polishing diamond processing device, characterized in that: include: A container, wherein a water outlet is provided at the bottom of the container; A rotating platform, the rotating platform is horizontally distributed in the container, the rotating platform is connected to a rotating shaft, the rotating shaft passes through the bottom of the container and is rotatably connected to the base, and the rotating platform is used to load diamonds; An injector, the injector is located at the center position just above the rotating platform, and the injector is used to spray the chemical solution forward to the center position of the diamond to form a water flow layer on the surface of the diamond; A laser, the laser being located beside the ejector and being used for emitting a laser beam; A reflector is arranged in front of the laser, and is used to reflect the laser beam emitted from the laser into a focusing lens, and the focusing lens is used to focus the laser beam, and the laser beam is incident on the water flow layer at an inclined angle.

2. A chemically assisted laser polishing diamond processing device according to claim 1, characterized in that: The incident angle of the laser beam is in the range of 5°-40°.

3. A chemically assisted laser polishing diamond processing device according to claim 2, characterized in that: The rotation speed of the rotating platform is 10 rpm-1000 rpm.

4. A chemically assisted laser polishing diamond processing device according to claim 3, characterized in that: The thickness of the water flow layer is 0.4 mm-12 mm.

5. A chemically assisted laser polishing diamond processing device according to claim 4, characterized in that: The water pressure range of the ejector is 0.1Mpa-20Mpa, and the flow rate is 1mL / s-1000mL / s.

6. The chemically assisted laser polishing diamond processing device according to claim 5, characterized in that: The chemical solution is any one of potassium hydroxide solution, sodium hydroxide solution and barium hydroxide solution.

7. A chemically assisted laser polishing diamond processing device according to claim 6, characterized in that: The radius of the container is R1, 30mm≦R1≦100mm, and the height of the container is H1, 10mm≦H1≦50mm.

8. A chemically assisted laser polishing diamond processing device according to claim 7, characterized in that: The rotating platform is in the form of an oblate cylindrical structure, with a radius of R2, 10 mm ≤ R2 ≤ 70 mm.

9. A chemically assisted laser polishing diamond processing device according to claim 8, characterized in that: The water outlet is provided with a valve, the diameter of the water outlet is D, 0.1mm≦D≦2mm, the length of the water outlet is H2, 5mm≦H2≦10mm, and the flow rate of the water outlet is 10mL / s-1000mL / s.

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