Boron and phosphorus impurity adsorption and removal equipment for polycrystalline silicon production

Abstract

The utility model discloses boron and phosphorus impurity adsorption and removal equipment for polycrystalline silicon production, which comprises a bottom plate, a treatment box I is mounted above the bottom plate, an activated carbon adsorption column is movably mounted in the treatment box I, a treatment component is mounted in the treatment box I above the activated carbon adsorption column, and an adding pipe is mounted on the surface of one end of the treatment box I; a second treatment box is connected to one side of the first treatment box through a pipeline, a frame is placed in the second treatment box, an adsorbent is placed in the frame, a discharge pipe is installed at the lower end of the second treatment box, and a drying and activating assembly is installed on one side of the second treatment box. According to the utility model, the trichlorosilane is physically adsorbed by using the activated carbon adsorption column in the treatment box I, and the trichlorosilane is chemically adsorbed by using the adsorbent in the treatment box II, so that the impurity removal effect is obvious, and the produced polycrystalline silicon product can realize the maximum income.

Description

Technical Field

[0001] The utility model relates to the technical field of polysilicon production, in particular to a device for removing boron and phosphorus impurities by absorption for polysilicon production. Background Art

[0002] The photovoltaic industry has the most prominent development momentum. As an important basic material for the photovoltaic industry, the market demand for polysilicon has increased dramatically, and the quality of polysilicon has become a key factor in the success of enterprises. Trichlorosilane is the main raw material for the deposition of polysilicon. Its purity determines the quality of polysilicon products, and the quality of polysilicon will directly affect the function and quality of photovoltaic products.

[0003] At present, the existing impurity removal method is generally to contact liquid trichlorosilane with activated carbon, and use the activated carbon to adsorb the boron and phosphorus impurities in the trichlorosilane. In actual use, the adsorption effect of activated carbon is poor, and the impurities that cannot be removed are always accumulated in the system and cannot be effectively removed. Based on this, an adsorption and removal of boron and phosphorus impurities equipment for polysilicon production is proposed to solve the above problems. Utility Model Content

[0004] The utility model aims to provide a device for removing boron and phosphorus impurities by adsorption for polysilicon production, so as to solve the problems raised in the above-mentioned background technology.

[0005] To achieve the above-mentioned purpose, the utility model provides the following technical solutions: an adsorption and removal of boron and phosphorus impurities equipment for polysilicon production, comprising a base plate, a processing box 1 is installed above the base plate, an activated carbon adsorption column is movably installed inside the processing box 1, a processing component is installed inside the processing box 1 above the activated carbon adsorption column, an addition pipe is installed on the surface of one end of the processing box 1, one side of the processing box 1 is connected to a processing box 2 through a pipeline, a frame is placed inside the processing box 2, an adsorbent is placed inside the frame, a discharge pipe is installed at the lower end of the processing box 2, and a drying and activation component is installed on one side of the processing box 2.

[0006] Preferably, a hydraulic rod is installed at the upper end of the processing box, a mounting plate is installed at the lower end of the hydraulic rod located inside the processing box, and the activated carbon adsorption column is installed at the lower end of the mounting plate.

[0007] Preferably, the processing assembly includes a steam generator, a connecting pipe, a dispersion pipe and a branch pipe. A connecting pipe is installed at one end of the processing box above the addition pipe, a steam generator is installed at one end of the connecting pipe, and dispersion pipes are installed at both sides of the processing boxes above the activated carbon adsorption column. One dispersion pipe is connected to the connecting pipe, and a plurality of branch pipes are installed on the opposite side surfaces of the two dispersion pipes.

[0008] Preferably, the two dispersion pipes are connected via an annular pipe.

[0009] Preferably, the drying and activation component includes a nitrogen pipe and a heat exchanger, a pipe and a heat exchanger are installed on the surface of one side of the processing box, and the input end of the heat exchanger is connected to the nitrogen pipe.

[0010] Preferably, the height of the first processing box is higher than that of the second processing box.

[0011] Compared with the prior art, the beneficial effects of the utility model are:

[0012] 1. This polysilicon production adsorption and removal of boron and phosphorus impurities equipment uses the activated carbon adsorption column inside the treatment box 1 to physically adsorb trichlorosilane, and uses the adsorbent inside the treatment box 2 to chemically adsorb trichlorosilane. The impurity removal effect is significant, and the polysilicon products produced can achieve maximum benefits.

[0013] 2. The polysilicon production adsorption and removal of boron and phosphorus impurities equipment is provided with a drying and activation component. External nitrogen enters the heat exchanger through the nitrogen pipe in the drying and activation component for heating. The heated nitrogen dries and activates the adsorbent, which is convenient for the adsorbent to chemically react with the boron and phosphorus impurities in trichlorosilane, thereby ensuring the use effect of the adsorbent. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a schematic diagram of the overall structure of the utility model;

[0015] Figure 2 It is a front cross-sectional view of the utility model;

[0016] Figure 3 It is a top sectional view of the processing box of the utility model.

[0017] In the figure: 1, bottom plate; 2, treatment box 1; 3, activated carbon adsorption column; 5, addition pipe; 6, treatment box 2; 7, frame; 8, discharge pipe; 10, hydraulic rod; 11, mounting plate; 12, annular pipe; 401, steam generator; 402, connecting pipe; 403, dispersion pipe; 404, branch pipe; 901, nitrogen pipe; 902, heat exchanger. DETAILED DESCRIPTION

[0018] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0019] In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "front end", "rear end", "two ends", "one end", "the other end" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as a limitation on the present invention. In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.

[0020] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "provided with", "connected", etc. should be understood in a broad sense. For example, "connected" can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be an indirect connection through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0021] like Figures 1 to 3 As shown, the polysilicon production adsorption and removal of boron and phosphorus impurities equipment of this embodiment includes a bottom plate 1, a processing box 2 is installed above the bottom plate 1, the processing box 2 is used to perform a physical adsorption of boron and phosphorus impurities in trichlorosilane, an activated carbon adsorption column 3 is movably installed inside the processing box 2, the activated carbon adsorption column 3 is used to perform physical adsorption of trichlorosilane, and a processing component is installed inside the processing box 2 above the activated carbon adsorption column 3, and the processing component is used to process the activated carbon adsorption column 3 after adsorption, so as to realize multiple uses of the activated carbon adsorption column 3 A adding tube 5 is installed on the surface of one end of the processing box 2, and the adding tube 5 is used to add liquid trichlorosilane. A processing box 2 6 is connected to one side of the processing box 2 through a pipeline. The processing box 2 6 is used to chemically adsorb boron and phosphorus impurities in trichlorosilane. A frame 7 is placed inside the processing box 2 6, and an adsorbent is placed inside the frame 7. The adsorbent is a high-efficiency adsorbent for removing boron and phosphorus impurities. A discharge pipe 8 is installed at the lower end of the processing box 2 6, and a drying and activation component is installed on one side of the processing box 2 6. The drying and activation component is used to dry and activate the adsorbent.

[0022] Specifically, a hydraulic rod 10 is installed at the upper end of the processing box 2, and a mounting plate 11 is installed inside the processing box 2 at the lower end of the hydraulic rod 10. The activated carbon adsorption column 3 is installed at the lower end of the mounting plate 11. The hydraulic rod 10 is extended and retracted to drive the activated carbon adsorption column 3 under the mounting plate 11 to move up and down, so that the activated carbon adsorption column 3 and the processing component can be kept horizontal, which is convenient for the processing component to process the activated carbon adsorption column 3.

[0023] Furthermore, the processing assembly includes a steam generator 401, a connecting pipe 402, a dispersion pipe 403 and a branch pipe 404. A connecting pipe 402 is installed at one end of the processing box 2 above the addition pipe 5, and a steam generator 401 is installed at one end of the connecting pipe 402. The processing boxes 2 on both sides above the activated carbon adsorption column 3 are installed with dispersion pipes 403. A dispersion pipe 403 is connected to the connecting pipe 402, and a plurality of branch pipes 404 are installed on the opposite side surfaces of the two dispersion pipes 403. The high-temperature steam generated by the steam generator 401 enters the interior of the processing box 2 through the connecting pipe 402, and performs high-temperature treatment on the activated carbon adsorption column 3 through the dispersion pipe 403 and the branch pipe 404, thereby realizing regeneration and replacement of the activated carbon adsorption column 3.

[0024] Furthermore, the two dispersion pipes 403 are connected via the annular pipe 12 .

[0025] Furthermore, the drying and activation component includes a nitrogen pipe 901 and a heat exchanger 902. A pipe with a heat exchanger 902 is installed on the surface of one side of the processing box 6. The input end of the heat exchanger 902 is connected to the nitrogen pipe 901. External nitrogen enters the heat exchanger 902 through the nitrogen pipe 901 for heating. The heated nitrogen dries and activates the adsorbent, which facilitates the adsorbent to chemically react with the boron and phosphorus impurities in trichlorosilane.

[0026] Furthermore, the height of the processing box 1 2 is higher than that of the processing box 2 6 , so that the trichlorosilane treated by the processing box 1 2 can be easily discharged into the processing box 2 6 , and no trichlorosilane residue will be generated inside the processing box 1 2 .

[0027] The method of use of this embodiment is as follows: when removing boron and phosphorus impurities from trichlorosilane, liquid trichlorosilane enters the interior of the treatment box 2 through the addition tube 5, and the activated carbon adsorption column 3 in the treatment box 2 physically adsorbs the boron and phosphorus impurities of trichlorosilane to achieve primary physical adsorption. The trichlorosilane physically adsorbed by the treatment box 2 enters the interior of the treatment box 2 6, and at the same time, external nitrogen enters the heat exchanger 902 through the nitrogen pipe 901 for heating. The heated heat exchanger 902 dries and activates the adsorbent, and the trichlorosilane physically adsorbed by the treatment box 2 reacts chemically with the adsorbent, and the boron impurity removal efficiency is greater than 95%, and the phosphorus impurity removal efficiency is greater than 10%. The removal efficiency is greater than 85%, the metal impurity removal efficiency is greater than 50%, the impurity removal effect is significant, and N-type polysilicon products can be produced to maximize the benefits. The trichlorosilane after impurities removal is subsequently treated through the discharge pipe 8. After the boron and phosphorus impurities inside the trichlorosilane are treated once, the high-temperature steam generated by the steam generator 401 enters the processing box 2 through the connecting pipe 402, and the activated carbon adsorption column 3 is subjected to high-temperature treatment through the dispersion pipe 403 and the branch pipe 404 to achieve regeneration and replacement of the activated carbon adsorption column 3. The nitrogen pipe 901 in the entire equipment, the connecting pipes of the processing box 2 and the processing box 2 6, etc. need to be equipped with specific valves for easy pipeline control.

[0028] Finally, it should be noted that the above description is only a preferred embodiment of the utility model and is not intended to limit the utility model. Although the utility model is described in detail with reference to the above embodiments, those skilled in the art can still modify the technical solutions recorded in the above embodiments or replace some of the technical features therein with equivalents. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the utility model shall be included in the protection scope of the utility model.

Claims

1. An adsorption and removal device for boron and phosphorus impurities in polysilicon production, comprising a bottom plate (1), characterized in that: A treatment box (2) is installed above the bottom plate (1), an activated carbon adsorption column (3) is movably installed inside the treatment box (2), a treatment component is installed inside the treatment box (2) above the activated carbon adsorption column (3), an addition pipe (5) is installed on one end surface of the treatment box (2), one side of the treatment box (2) is connected to the treatment box (6) through a pipeline, a frame (7) is placed inside the treatment box (6), an adsorbent is placed inside the frame (7), a discharge pipe (8) is installed at the lower end of the treatment box (6), and a drying and activation component is installed on one side of the treatment box (6).

2. The equipment for removing boron and phosphorus impurities by adsorption for polysilicon production according to claim 1, characterized in that: A hydraulic rod (10) is installed at the upper end of the treatment box (2), a mounting plate (11) is installed at the lower end of the hydraulic rod (10) located inside the treatment box (2), and the activated carbon adsorption column (3) is installed at the lower end of the mounting plate (11).

3. The equipment for removing boron and phosphorus impurities by adsorption for polysilicon production according to claim 1, characterized in that: The treatment component comprises a steam generator (401), a connecting pipe (402), a dispersion pipe (403) and a branch pipe (404); a connecting pipe (402) is installed at one end of a treatment box (2) above the addition pipe (5); a steam generator (401) is installed at one end of the connecting pipe (402); dispersion pipes (403) are installed at both sides of the treatment boxes (2) above the activated carbon adsorption column (3); one dispersion pipe (403) is connected to the connecting pipe (402); and a plurality of branch pipes (404) are installed on opposite side surfaces of the two dispersion pipes (403).

4. The device for removing boron and phosphorus impurities by adsorption for polysilicon production according to claim 3, characterized in that: The two dispersion pipes (403) are connected via an annular pipe (12).

5. The equipment for removing boron and phosphorus impurities by adsorption for polysilicon production according to claim 1, characterized in that: The drying and activation assembly comprises a nitrogen pipe (901) and a heat exchanger (902). A pipe and a heat exchanger (902) are installed on the surface of one side of the treatment box (6). The input end of the heat exchanger (902) is connected to the nitrogen pipe (901).

6. The device for removing boron and phosphorus impurities by adsorption for polysilicon production according to claim 1, characterized in that: The height of the processing box 1 (2) is higher than the height of the processing box 2 (6).

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