Corrosion device for gallium nitride wafer

Abstract

The utility model provides a gallium nitride wafer corrosion device which comprises an outer groove body, an upper inner groove body is arranged on the upper portion inside the outer groove body, a baffle is installed in the middle of the inner side of the upper inner groove body in a sealed and inserted mode, the left side area of the baffle is a corrosion area, and the right side area of the baffle is a cleaning area. And a wafer assembly capable of moving up and down is arranged above the corrosion area. The device provided by the utility model is reasonable in design, and the first motor, the rotating shaft, the first gear, the vertical rack, the fixed plate, the fixed shaft, the fixed ring body, the movable ring body and the movable block are arranged and matched, so that the gallium nitride wafer silicon wafer can move up and down in the corrosive liquid; meanwhile, under the cooperative action of a second motor, a threaded rod, a threaded block, a guide rod, a moving block and a connecting rod, left-right movement of the gallium nitride wafer silicon wafer can be achieved, contact between the gallium nitride wafer silicon wafer and the corrosive liquid is more uniform, the corroded gallium nitride wafer silicon wafer can be moved to a cleaning area, operation is more convenient, and the working efficiency is improved.

Description

Technical Field

[0001] The utility model mainly relates to the technical field of wafer etching, and in particular to an etching device for a gallium nitride wafer. Background Art

[0002] Gallium nitride is a third-generation semiconductor material with a wide bandgap of 3.4eV. It has the characteristics of high saturated electron drift velocity, high breakdown voltage and high thermal conductivity, and thus has excellent photoelectric performance, thermal stability and chemical stability. Gallium nitride is an ideal material for making ultraviolet blue-green light-emitting diodes (LEDs), laser diodes (LDs) and ultraviolet detectors, and also has great potential in the market demand for radio frequency devices, power devices and electronic power devices.

[0003] After the gallium nitride wafer undergoes processes such as diffusion, oxidation, photolithography, corrosion, etching, cleaning, electrophoresis, secondary photolithography, and nickel plating, multiple grains can be formed on the surface of the wafer. After the wafer is split, each grain is a chip.

[0004] The inventor discovered the following defects during the operation of the specific embodiment:

[0005] During the etching process of existing silicon wafers, the surface of the silicon wafer will have uneven contact with the etching solution, which will affect the speed and uniformity of the etching of the silicon wafer surface, resulting in a decrease in product quality. Secondly, the silicon wafer needs to be cleaned after etching, which usually requires additional equipment to operate, which is relatively cumbersome.

[0006] It should be noted that the above contents belong to the technical cognition scope of the inventor. Since the technical contents in this field are vast and too complicated, the above contents of this application do not necessarily constitute prior art. Utility Model Content

[0007] 1. Technical problems to be solved by the utility model:

[0008] The utility model provides a gallium nitride wafer etching device to solve the technical problems existing in the above-mentioned background technology.

[0009] 2. Technical solution:

[0010] To achieve the above-mentioned purpose, the technical solution provided by the utility model is: a gallium nitride wafer etching device, comprising an outer trough body, an upper inner trough body is arranged above the interior of the outer trough body, a baffle is sealed and plugged installed in the middle of the inner side of the upper inner trough body, the left area of ​​the baffle is a corrosion area, and the right area of ​​the baffle is a cleaning area, a wafer assembly that can move up and down is arranged above the corrosion area, the wafer assembly includes a plurality of installable gallium nitride wafer silicon sheets, and adjustment mechanisms are arranged on both sides of the wafer assembly.

[0011] Furthermore, the wafer assembly also includes a first motor, an output end of the first motor is connected to a rotating shaft, both ends of the rotating shaft are connected to a first gear, one side of the first gear is meshed with a vertical rack, one side of the vertical rack is fixedly connected to a fixed plate, a fixed shaft is connected between the side walls of the fixed plate, one side of the fixed shaft is fixedly connected to a plurality of fixed ring bodies, each of the fixed ring bodies is provided with a movable active ring body on one side, one side of the movable ring body is connected to a movable block, and the movable block is slidably connected to the fixed ring body.

[0012] Furthermore, a plurality of magnetic blocks are provided around the side walls of the movable ring body and the movable block, the magnetic blocks on both sides attract each other, and the gallium nitride wafer silicon sheet is installed between the magnetic blocks on both sides.

[0013] Furthermore, the adjusting mechanism includes a second motor, which is installed on one side of the top wall of the outer trough body, and the output end of the second motor is connected to a threaded rod, and the external thread of the threaded rod is connected to a threaded block, and the side of the top wall of the outer trough body away from the threaded rod is fixedly connected to a guide rod, and the external sliding connection of the guide rod is connected to a moving block, the threaded block and the moving block are connected by a connecting rod, the rotating shaft is fixedly installed on the top of the threaded block, and the side of the vertical rack away from the fixed plate slides up and down on the threaded block and the side wall of the moving block.

[0014] Furthermore, a detachable lower inner tank body is provided at the lower part of the outer tank body, an opening and closing mechanism is provided between the upper inner tank body and the lower inner tank body, the opening and closing mechanism includes an upper cover plate and a lower cover plate, the upper cover plate is provided below the through groove opened in the bottom wall of the cleaning area, the lower cover plate is provided below the top of the lower inner tank body corresponding to the upper cover plate, the upper cover plate and one side of the lower cover plate are connected by a connecting plate, the opening and closing mechanism also includes a third motor, the third motor is fixedly installed on the outer side wall of the outer tank body, the output end of the third motor is connected to a rotating rod, the rotating rod passes horizontally through the interior of the outer tank body, the two outer ends of the rotating rod are connected to a second gear, the two outer side walls of the outer tank body are slidably connected with a transverse rack, the second gear is meshed with the transverse rack, and one side of the transverse rack is connected to the side wall of the lower cover plate.

[0015] Furthermore, a removal outlet is provided on the front side wall of the outer tank body, a handle is installed on the front side wall of the lower inner tank body, a filter screen is detachably installed on the lower inner tank body below the lower cover plate, an activated carbon adsorption plate is detachably installed vertically in the middle of the inner side of the lower inner tank body, a first drain outlet is provided on one side of the lower inner tank body, and a second drain outlet is provided on one side of the outer tank body corresponding to the first drain outlet, and the first drain outlet and the second drain outlet are connected to each other.

[0016] Furthermore, a sealing plate is provided on the inner side of the cleaning area above the through groove, and the lower surface of the sealing plate can be in contact with the upper surface of the upper cover plate.

[0017] 3. Beneficial effects:

[0018] Compared with the prior art, the technical solution provided by the utility model has the following beneficial effects:

[0019] The utility model has a reasonable design. By utilizing the arrangement and coordination among the first motor, the rotating shaft, the first gear, the vertical rack, the fixed plate, the fixed shaft, the fixed ring body, the movable ring body and the movable block, the gallium nitride wafer silicon slice can be moved up and down in the corrosive liquid. At the same time, under the coordinated action of the second motor, the threaded rod, the threaded block, the guide rod, the movable block and the connecting rod, the gallium nitride wafer silicon slice can be moved left and right, so that the contact between the gallium nitride wafer silicon slice and the corrosive liquid is more uniform, and the corroded gallium nitride wafer silicon slice can also be moved to the cleaning area, so that the operation is more convenient and the work efficiency is improved.

[0020] Through the arrangement and coordination among the upper cover plate, the lower cover plate, the third motor, the rotating rod, the second gear, the transverse rack, the lower inner tank body, the filter screen and the activated carbon adsorption plate, the sewage after cleaning can be filtered and purified before being discharged. The sewage is discharged quickly with a large flow rate, and the sediment can be taken away, thereby improving the environmental protection performance of the device.

[0021] It should be noted that the structures not introduced in the present invention are not related to the design points and improvement directions of the present invention, and are the same as the prior art or can be implemented by using the prior art, and will not be described in detail here. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 It is a schematic diagram of the overall structure of the utility model;

[0023] Figure 2 This is a schematic diagram of the wafer assembly structure of the utility model;

[0024] Figure 3 This is a schematic diagram of the opening and closing mechanism structure of the utility model;

[0025] Figure 4 It is a schematic diagram of the lower inner tank structure of the utility model.

[0026] Reference numerals:

[0027] 1. Outer tank body; 101. Take-out port; 102. Second drain port; 2. Upper inner tank body; 3. Baffle; 4. Wafer assembly; 401. First motor; 402. Rotating shaft; 403. First gear; 404. Vertical rack; 405. Fixed plate; 406. Fixed shaft; 407. Fixed ring body; 408. Movable ring body; 409. Movable block; 5. Adjustment mechanism; 501. Second motor; 502. Threaded rod; 503. Threaded block; 504. Guide rod; 505. Moving block; 506. Connecting rod; 6. Lower inner tank body; 601. Handle; 602. First drain port; 7. Opening and closing mechanism; 701. Upper cover plate; 702. Lower cover plate; 703. Third motor; 704. Rotating rod; 705. Second gear; 706. Horizontal rack; 8. Filter; 9. Activated carbon adsorption plate; 10. Sealing plate. DETAILED DESCRIPTION

[0028] To facilitate the understanding of the present invention, the present invention will be described more comprehensively below with reference to the relevant drawings. Several embodiments of the present invention are given in the drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present invention more thorough and comprehensive.

[0029] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "page", "bottom", "inside", "outside", "clockwise", "counterclockwise", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0030] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present utility model, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0031] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed", "provided with", "provided on" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be an indirect connection through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances. Example

[0032] See attached Figure 1-4 A gallium nitride wafer etching device comprises an outer trough body 1, an upper inner trough body 2 is arranged above the inner part of the outer trough body 1, a baffle 3 is sealed and plugged installed in the middle of the inner side of the upper inner trough body 2, the left area of ​​the baffle 3 is the etching area, and the right area of ​​the baffle 3 is the cleaning area, a wafer assembly 4 which can move up and down is arranged above the etching area, the wafer assembly 4 comprises a plurality of installable gallium nitride wafer silicon sheets, and adjustment mechanisms 5 are arranged on both sides of the wafer assembly 4.

[0033] In this embodiment, the wafer assembly 4 also includes a first motor 401, the output end of the first motor 401 is connected to a rotating shaft 402, both ends of the outside of the rotating shaft 402 are connected to a first gear 403, one side of the first gear 403 is meshed with a vertical rack 404, one side of the vertical rack 404 is fixedly connected to a fixed plate 405, a fixed shaft 406 is connected between the side walls of the fixed plate 405, one side of the fixed shaft 406 is fixedly connected to a plurality of fixed ring bodies 407, each fixed ring body 407 is provided with a movable active ring body 408 on one side, and a movable block 409 is connected to one side of the movable ring body 408, and the movable block 409 is slidably connected to the fixed ring body 407.

[0034] It should be noted that, the first motor 401 is turned on to drive the rotating shaft 402 to rotate, and the rotating shaft 402 drives the two first gears 403 to rotate. The engagement of the first gear 403 with the vertical rack 404 makes it move downward on the side walls of the threaded block 503 and the moving block 505, and the vertical rack 404 drives the fixed plate 405 and the fixed shaft 406 to move downward as a whole, so that the gallium nitride wafer silicon wafer is immersed in the etching liquid, and can have a certain upward and downward movement inside the etching liquid. When the etching of the gallium nitride wafer silicon wafer is completed, the upward movement of the vertical rack 404 is used to drive the silicon wafer upward, so that it leaves the etching liquid and is located above the upper inner tank body 2, and the silicon wafer continues to move to the right through the adjustment mechanism 5, so that it moves to the top of the cleaning area, and then the vertical rack 404 is used to move downward to immerse the silicon wafer in the cleaning water, so as to achieve the cleaning of the silicon wafer.

[0035] In this embodiment, a plurality of magnetic blocks are disposed around the side walls of the movable ring body 408 and the movable block 409 . The magnetic blocks on both sides attract each other, and the gallium nitride wafer silicon piece is installed between the magnetic blocks on both sides.

[0036] It should be noted that the gallium nitride wafer silicon wafer is placed between the fixed ring body 407 and the movable ring body 408, and the movable block 409 is moved to drive the movable ring body 408 close to the silicon wafer, so that the magnetic sliders on both sides are in contact with the two sides of the silicon wafer, thereby fixing the silicon wafer.

[0037] In this embodiment, the adjustment mechanism 5 includes a second motor 501, which is installed on one side of the top wall of the outer trough body 1. The output end of the second motor 501 is connected to a threaded rod 502, and the external thread of the threaded rod 502 is connected to a threaded block 503. The top wall of the outer trough body 1 is fixedly connected to a guide rod 504 on the side away from the threaded rod 502, and the external sliding connection of the guide rod 504 is connected to a moving block 505. The threaded block 503 and the moving block 505 are connected by a connecting rod 506. The rotating shaft 402 is fixedly installed on the top of the threaded block 503, and the vertical rack 404 slides up and down on the side walls of the threaded block 503 and the moving block 505 on the side away from the fixed plate 405.

[0038] It should be noted that turning on the second motor 501 drives the threaded rod 502 to rotate, and the threaded rod 502 drives the threaded block 503 to move to the right. At the same time, the connecting rod 506 drives the moving block 505 to slide to the right on the guide rod 504, driving the silicon wafer to move to the right, so that the silicon wafer contacts the etching solution more evenly.

[0039] In this embodiment, a detachable lower inner tank body 6 is provided at the lower part of the outer tank body 1, and an opening and closing mechanism 7 is provided between the upper inner tank body 2 and the lower inner tank body 6. The opening and closing mechanism 7 includes an upper cover plate 701 and a lower cover plate 702. The upper cover plate 701 is provided below the through groove opened in the bottom wall of the cleaning area, and the lower cover plate 702 is provided at the top of the lower inner tank body 6 corresponding to the lower part of the upper cover plate 701. The upper cover plate 701 and one side of the lower cover plate 702 are connected by a connecting plate. The opening and closing mechanism 7 also includes a third motor 703, which is fixedly installed on the outer side wall of the outer tank body 1. A rotating rod 704 is connected to the output end of the third motor 703. The rotating rod 704 passes horizontally through the interior of the outer tank body 1. Second gears 705 are connected to both ends of the outer side of the rotating rod 704. Transverse racks 706 are slidably connected to the two outer side walls of the outer tank body 1. The second gear 705 is meshed with the transverse rack 706, and one side of the transverse rack 706 is connected to the side wall of the lower cover plate 702.

[0040] It should be noted that when cleaning is completed, the third motor 703 can be turned on to drive the rotating rod 704 to rotate, and the rotating rod 704 drives the two second gears 705 to rotate. The second gear 705 is engaged with the transverse rack 706, so that it moves to the left on the outer wall of the outer tank body 1, and drives the lower cover plate 702 and the upper cover plate 701 to move to the left together, so that the through groove gradually opens. At this time, the cleaned sewage flows through the opened through groove to the interior of the lower inner tank body 6.

[0041] In this embodiment, a removal outlet 101 is provided on the front side wall of the outer tank body 1, a handle 601 is installed on the front side wall of the lower inner tank body 6, a filter screen 8 is detachably installed on the lower inner tank body 6 below the lower cover plate 702, an activated carbon adsorption plate 9 is detachably installed vertically in the middle of the inner side of the lower inner tank body 6, a first drain outlet 602 is provided on one side of the lower inner tank body 6, and a second drain outlet 102 is provided on one side of the outer tank body 1 corresponding to the first drain outlet 602, and the first drain outlet 602 and the second drain outlet 102 are connected to each other.

[0042] It should be noted that the first step of impurity filtration is performed under the action of the filter 8, and then the sewage is purified by the activated carbon adsorption plate 9, and finally discharged through the first drain port 602 and the second drain port 102 to avoid causing environmental pollution. Finally, by pulling the handle 601 outward, the lower inner tank body 6 is taken out from the inside of the removal port 101, and the filter 8 and the activated carbon adsorption plate 9 can be taken out and replaced.

[0043] In this embodiment, a sealing plate 10 is provided on the inner side of the cleaning area above the through groove, and the lower surface of the sealing plate 10 can be in contact with the upper surface of the upper cover plate 701 .

[0044] It should be noted that the bottom sealing can be maintained during the cleaning of the GaN wafer silicon slice to prevent water from leaking downward.

[0045] The working principle of the utility model is as follows: a gallium nitride wafer silicon wafer is placed between a fixed ring body 407 and a movable ring body 408, and the movable ring body 408 is driven close to the silicon wafer by moving the movable block 409, so that the magnetic sliders on both sides are pressed against the two sides of the silicon wafer, thereby fixing the silicon wafer, and then the first motor 401 is turned on to drive the rotating shaft 402 to rotate, and the rotating shaft 402 drives the two first gears 403 to rotate, and the first gear 403 is engaged with the vertical rack 404 to make it move downward on the side wall of the threaded block 503 and the movable block 505, and the vertical rack 404 The fixed plate 405 and the fixed shaft 406 are driven to move downward as a whole, so that the GaN wafer silicon wafer is immersed in the etching liquid and can move up and down with a certain range inside the etching liquid. At the same time, the second motor 501 is turned on to drive the threaded rod 502 to rotate, and the threaded rod 502 drives the threaded block 503 to move to the right. At the same time, the connecting rod 506 drives the moving block 505 to slide to the right on the guide rod 504, driving the silicon wafer to move to the right, so that the silicon wafer contacts the etching liquid more evenly. When the etching of the GaN wafer silicon wafer is completed, the vertical rack 404 is used to rotate the vertical rack 404. The upward movement drives the silicon wafer upward, so that it leaves the etching liquid and is located above the upper inner tank body 2. The silicon wafer continues to move to the right, so that it moves to the top of the cleaning area, and then the vertical rack 404 moves downward to make the silicon wafer immersed in the cleaning water to achieve the cleaning of the silicon wafer; when the cleaning is completed, the third motor 703 can be turned on to drive the rotating rod 704 to rotate, and the rotating rod 704 drives the two second gears 705 to rotate. The second gear 705 is engaged with the horizontal rack 706, so that it moves to the left on the outer wall of the outer tank body 1, and drives the lower cover plate 702 and The upper cover plate 701 moves to the left together, so that the through slot is gradually opened. At this time, the cleaned sewage flows into the interior of the lower inner tank body 6 through the opened through slot, and the first step of impurity filtration is performed under the action of the filter screen 8, and then the sewage is purified by the activated carbon adsorption plate 9, and finally discharged through the first drain port 602 and the second drain port 102 to avoid causing environmental pollution. Finally, by pulling the handle 601 outward, the lower inner tank body 6 is taken out from the inside of the removal port 101, and the filter screen 8 and the activated carbon adsorption plate 9 can be taken out and replaced.

[0046] The above-described embodiments only express a certain implementation method of the utility model, and the description thereof is relatively specific and detailed, but it cannot be understood as limiting the scope of the patent of the utility model. It should be pointed out that, for ordinary technicians in this field, several modifications and improvements can be made without departing from the concept of the utility model, which all belong to the protection scope of the utility model. Therefore, the protection scope of the patent of the utility model shall be based on the attached claims.

Claims

1. A gallium nitride wafer etching device, characterized in that: The invention comprises an outer tank body (1), an upper inner tank body (2) is arranged above the inner part of the outer tank body (1), a baffle (3) is sealed and plugged into the middle part of the inner side of the upper inner tank body (2), the left side area of ​​the baffle (3) is a corrosion area, the right side area of ​​the baffle (3) is a cleaning area, a wafer assembly (4) movable up and down is arranged above the corrosion area, the wafer assembly (4) comprises a plurality of installable gallium nitride wafer silicon sheets, and adjustment mechanisms (5) are arranged on both sides of the wafer assembly (4).

2. The gallium nitride wafer etching device according to claim 1, characterized in that: The wafer assembly (4) also includes a first motor (401), the output end of the first motor (401) is connected to a rotating shaft (402), both ends of the rotating shaft (402) are connected to a first gear (403), one side of the first gear (403) is meshed with a vertical rack (404), one side of the vertical rack (404) is fixedly connected to a fixed plate (405), a fixed shaft (406) is connected between the side walls of the fixed plate (405), one side of the fixed shaft (406) is fixedly connected to a plurality of fixed ring bodies (407), each of the fixed ring bodies (407) is provided with a movable active ring body (408) on one side, one side of the active ring body (408) is connected to an active block (409), and the active block (409) is slidably connected to the fixed ring body (407).

3. The gallium nitride wafer etching device according to claim 2, characterized in that: A plurality of magnetic blocks are arranged around the side walls of the movable ring body (408) and the movable block (409), the magnetic blocks on both sides attract each other, and the gallium nitride silicon wafer is installed between the magnetic blocks on both sides.

4. The gallium nitride wafer etching device according to claim 3, characterized in that: The adjusting mechanism (5) comprises a second motor (501), the second motor (501) being mounted on one side of the top wall of the outer tank body (1), the output end of the second motor (501) being connected to a threaded rod (502), the threaded block (503) being externally threadedly connected to the threaded rod (502), a guide rod (504) being fixedly connected to the side of the top wall of the outer tank body (1) away from the threaded rod (502), a moving block (505) being slidably connected to the outside of the guide rod (504), the threaded block (503) and the moving block (505) being connected via a connecting rod (506), the rotating shaft (402) being fixedly mounted on the top of the threaded block (503), and the side of the vertical rack (404) away from the fixed plate (405) sliding up and down on the side walls of the threaded block (503) and the moving block (505).

5. The gallium nitride wafer etching device according to claim 4, characterized in that: A detachably mounted lower inner tank body (6) is provided at the lower part of the inner part of the outer tank body (1); an opening and closing mechanism (7) is provided between the upper inner tank body (2) and the lower inner tank body (6); the opening and closing mechanism (7) comprises an upper cover plate (701) and a lower cover plate (702); the upper cover plate (701) is provided below a through slot provided on the bottom wall of the cleaning area; the lower cover plate (702) is provided at the top of the lower inner tank body (6) and below the upper cover plate (701); one side of the upper cover plate (701) and the lower cover plate (702) are connected via a connecting plate; the opening and closing mechanism (7) further comprises a third electric The third motor (703) is fixedly mounted on the outer wall of the outer tank body (1); the output end of the third motor (703) is connected to a rotating rod (704); the rotating rod (704) passes through the interior of the outer tank body (1) horizontally; both ends of the outer side of the rotating rod (704) are connected to second gears (705); both outer walls of the outer tank body (1) are slidably connected to transverse racks (706); the second gear (705) is meshed with the transverse rack (706); and one side of the transverse rack (706) is connected to the side wall of the lower cover plate (702).

6. The gallium nitride wafer etching device according to claim 5, characterized in that: The front side wall of the outer tank body (1) is provided with a take-out port (101), the front side wall of the lower inner tank body (6) is provided with a handle (601), the lower inner tank body (6) is located below the lower cover plate (702) and is provided with a detachable filter screen (8), an activated carbon adsorption plate (9) is detachably provided in a vertical direction in the middle of the inner side of the lower inner tank body (6), a first drain port (602) is provided on one side of the lower inner tank body (6), and a second drain port (102) is provided on one side of the outer tank body (1) corresponding to the first drain port (602), and the first drain port (602) and the second drain port (102) are communicated with each other.

7. The gallium nitride wafer etching device according to claim 6, characterized in that: A sealing plate (10) is provided on the inner side of the cleaning area above the through groove, and the lower surface of the sealing plate (10) can be in contact with the upper surface of the upper cover plate (701).

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