Display panel manufacturing device and display panel

Abstract

The utility model relates to a manufacturing device of a display panel and the display panel. According to one embodiment of the utility model, the manufacturing device of the display panel comprises a fixed frame, a plurality of light-emitting elements and a plurality of light-emitting elements, wherein the fixed frame is used for fixing the periphery of a transfer printing film; an optical inspection member including a light source that irradiates light toward the transfer film and a light receiving sensor disposed in a light path of the light source; and a stretching processing member that stretches the transfer film on which the plurality of light-emitting elements including a first light-emitting element and a second light-emitting element are arranged in a peripheral direction of the transfer film, and controls a degree of stretching based on a detection result of the optical inspection member, the plurality of light-emitting elements including the first light-emitting element and the second light-emitting element, the second light emitting element includes an alignment key formed on one side of the second light emitting element.

Description

Technical Field

[0001] The utility model relates to a manufacturing device and a manufacturing method of a display panel and a display panel. Background Art

[0002] With the development of multimedia, the importance of display devices is increasing. In response to this, various display devices such as organic light emitting display devices (OLED: Organic Light Emitting Display), liquid crystal display devices (LCD: Liquid Crystal Display), etc. are being used.

[0003] As a device for displaying an image of a display device, a display panel such as a light emitting display panel or a liquid crystal display panel is included. Among them, the light emitting display panel may include a light emitting diode (LED), and the light emitting diode includes an organic light emitting diode using an organic substance as a fluorescent substance or an inorganic light emitting diode using an inorganic substance as a fluorescent substance.

[0004] When manufacturing a display panel using inorganic light emitting diodes as light emitting diodes, it is necessary to develop a transfer device for transferring micro light emitting diodes (Micro LEDs) onto a substrate of the display panel. Utility Model Content

[0005] The technical problem to be solved by the utility model is to provide a manufacturing device and a manufacturing method of a display panel which are easy to manufacture and arrange light emitting diodes.

[0006] Furthermore, a manufacturing device and a manufacturing method for a display panel are provided, which can precisely and accurately arrange the light emitting diodes at the arrangement intervals of the light emitting diodes.

[0007] The technical problems of the present invention are not limited to the technical problems mentioned above, and other technical problems not mentioned can be clearly understood by those skilled in the art through the following description.

[0008] A display panel manufacturing device according to one embodiment for solving the above-mentioned technical problems includes: a fixed frame for fixing the periphery of a transfer film on which a plurality of light-emitting elements are arranged; an optical inspection component, including a light source for irradiating light toward the transfer film and a light receiving sensor arranged in the light path of the light source; and a stretching processing component for stretching the transfer film on which the plurality of light-emitting elements are arranged toward the periphery of the transfer film, and controlling the degree of stretching based on the detection result of the optical inspection component, wherein the plurality of light-emitting elements include a first light-emitting element and a second light-emitting element, and the second light-emitting element includes an align key formed on one side.

[0009] The stretching processing part may include: a plate-shaped frame on which the transfer film is arranged; and a transfer driving part that supports a rear surface of the plate-shaped frame and transfers the plate-shaped frame in a front surface direction or a rear surface direction of the plate-shaped frame.

[0010] The plate-shaped frame may include: one or more through holes formed from one surface to another surface, wherein the optical inspection component may form a light path on the same axis as the through holes, and the light source and the light receiving sensor may be arranged with the through holes placed therebetween.

[0011] The stretching processing unit may stretch the transfer film until the second light emitting element disposed on the transfer film is located on the same axis as the through hole based on the detection result of the optical inspection unit.

[0012] The manufacturing apparatus of the display panel may further include a film mounting member that pressurizes the fixing frame to fix the position of the fixing frame during the stretching by the stretching treatment member.

[0013] The second light emitting element may be sequentially arranged with a second semiconductor layer, an active layer, a first semiconductor layer, a connecting electrode, and the alignment key.

[0014] The alignment key may have conductivity, and may have reflectivity higher than that of the connection electrode.

[0015] The width of the second light emitting element may be equal to or greater than the width of the first light emitting element.

[0016] The second light emitting element may be surrounded by the first light emitting element.

[0017] The number of the second light emitting elements may be smaller than the number of the first light emitting elements.

[0018] A method for manufacturing a display panel according to another embodiment for solving the above-mentioned technical problem may include the following steps: manufacturing a plurality of light-emitting elements on a base substrate; moving and transferring the plurality of light-emitting elements to a transfer film; fixing the periphery of the transfer film to which the plurality of light-emitting elements are transferred using a fixed frame, and arranging the transfer film on a plate-shaped frame of a stretching processing component; monitoring the amount of light reflected from the entire substrate using an optical inspection component; stretching the transfer film toward the periphery of the transfer film using the stretching processing component, and controlling the degree of stretching based on the detection result of the optical inspection component, wherein the plurality of light-emitting elements may include a first light-emitting element and a second light-emitting element, and the second light-emitting element may include an align key formed on one side.

[0019] The manufacturing method of the display panel may further include the following steps: preparing a display substrate including a pixel circuit and a pixel electrode; and arranging the plurality of light emitting elements whose intervals are changed by the stretched transfer film on the pixel electrode of the display substrate.

[0020] The stretching treatment component may be stretched until the second light emitting element is located on a light path of the optical inspection component.

[0021] In the step of manufacturing the plurality of light-emitting elements, a first light-emitting element having a second semiconductor layer, an active layer, a first semiconductor layer and a connecting electrode stacked in sequence and a second light-emitting element having a second semiconductor layer, an active layer, a first semiconductor layer, a connecting electrode and an alignment key stacked in sequence can be formed on a base substrate.

[0022] The alignment key has conductivity and has a reflectivity higher than that of the connection electrode.

[0023] The width of the second light emitting element may be formed to be equal to or greater than the width of the first light emitting element.

[0024] A display panel according to another embodiment for solving the above-mentioned technical problem may include: a supporting substrate, including a pixel circuit and a pixel electrode; and a plurality of light-emitting elements arranged on the pixel electrode, wherein the plurality of light-emitting elements may include a first light-emitting element and a second light-emitting element, and the second light-emitting element may include an align key formed on one side.

[0025] The second light emitting element may include a second semiconductor layer, an active layer, a first semiconductor layer, a connecting electrode, and the alignment key in sequence.

[0026] The alignment key may have conductivity, and may have reflectivity higher than that of the connection electrode.

[0027] The width of the second light emitting element is equal to or greater than the width of the first light emitting element.

[0028] The second light emitting element is surrounded by the first light emitting element.

[0029] The number of the second light emitting elements is smaller than the number of the first light emitting elements.

[0030] As a light emitting element transfer system according to an embodiment, a transfer member can be manufactured in one system and a light emitting element on a transfer film can be transferred onto a circuit substrate using the transfer member.

[0031] The effects according to the embodiments are not limited to the above examples, and more diverse effects are included in this specification. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 is a plan view of a display device according to an embodiment.

[0033] Figure 2 is a plan view schematically showing a light emitting region of each pixel according to an embodiment.

[0034] Figure 3 is a plan view schematically showing a light emitting region of each pixel according to another embodiment.

[0035] Figure 4 It is schematically shown Figure 2 A cross-sectional view of the A-A' section plane.

[0036] Figure 5 It is schematically shown Figure 4 Magnified view of the P region.

[0037] Figure 6 It is a plan view for explaining a transfer film on which light emitting elements are arranged according to an embodiment of the present invention.

[0038] Figure 7 It is a side view of a transfer film according to an embodiment of the utility model.

[0039] Figure 8 FIG. 4 is a perspective view schematically showing a manufacturing apparatus for a display panel according to an embodiment.

[0040] Fig. 9 It specifically shows Figure 8 A cross-sectional view of the fixed frame and the tensile processing components shown.

[0041] Fig.10 It is shown Fig. 9 An exploded perspective view of another form of the membrane mounting component shown.

[0042] Fig.11 It is a plan view for explaining a light emitting element arranged on a transfer film according to an embodiment of the present invention.

[0043] Fig.12 It is a diagram for explaining a light emitting element arranged on a transfer film according to another embodiment of the present invention.

[0044] Fig.13 It is a diagram for explaining a light emitting element arranged on a transfer film according to still another embodiment of the present invention.

[0045] Fig.14 is schematically shown along Fig.11 A cross-sectional view of the S-S' cut plane.

[0046] Fig.15 The invention is a block diagram showing a processor and a memory of a manufacturing device for a display panel according to an embodiment of the present invention.

[0047] Fig.16 It is used for illustration purposes Figure 8 and Fig. 9 A flowchart of a method for manufacturing a display panel of a manufacturing device.

[0048] Figures 17 to 23 is a cross-sectional view for explaining a method for manufacturing a light emitting element according to an embodiment.

[0049] Fig.24 FIG. 1 is a perspective view schematically showing a transfer film on which light-emitting elements manufactured according to an embodiment are arranged.

[0050] Fig.25 It is schematically shown Fig.24 The transfer film shown is a perspective view of a state in which the transfer film is mounted on the film mounting member.

[0051] Fig.26 is a schematic diagram showing the arrangement of Fig.24 A front view of a portion of the arrangement of light-emitting elements on the first transfer film shown.

[0052] Figures 27 to 30 These are a cross-sectional view and a front view for explaining a method of stretching a transfer film.

[0053] Figure 31 to Figure 33 This is a cross-sectional view for explaining a method of moving and transferring a light-emitting element on a transfer film to a display panel.

[0054] Fig.34 is a plan view of a display panel according to an embodiment of the utility model.

[0055] Fig.35 is a plan view of a display panel according to another embodiment of the utility model.

[0056] Description of reference numerals:

[0057] 100: Display substrate LE: Light emitting element

[0058] 125: Connecting electrode ES: Transfer film

[0059] IDK: Alignment Key 500: Display Panel Manufacturing Device

[0060] 520: Optical inspection component 523: Light source

[0061] 522: light receiving sensor 550: stretching processing component

[0062] 553: Transfer drive components DETAILED DESCRIPTION

[0063] References and Attachments Figure 1 The following detailed embodiments will clarify the advantages and features of the present invention and the methods for achieving these advantages and features. However, the present invention can be implemented in a variety of different forms and is not limited to the embodiments disclosed below. The purpose of providing these embodiments is only to make the disclosure of the present invention complete and to fully inform the scope of the present invention to those with ordinary knowledge in the technical field to which the present invention belongs. The present invention is only defined by the scope of the claims.

[0064] Reference to elements or layers being "on" other elements or layers includes reference to being immediately above other elements or layers or being sandwiched between other layers or other elements. Throughout the specification, the same reference numerals refer to the same constituent elements. The shapes, sizes, ratios, angles, quantities, etc. disclosed in the drawings for illustrating the embodiments are exemplary, and thus the present invention is not limited to the matters illustrated.

[0065] Hereinafter, specific embodiments will be described with reference to the accompanying drawings.

[0066] Figure 1 is a plan view of a display device according to an embodiment.

[0067] Reference Figure 1 The display device 10 according to an embodiment can be applied to various home appliances or IoT devices such as smart phones, portable phones, tablet personal computers, personal digital assistants (PDA), portable multimedia players (PMP), televisions, game consoles, watch-type electronic devices, head-mounted displays, monitors, notebook computers, vehicle navigation devices, vehicle dashboards, digital cameras, video cameras, external advertising boards, electro-optical boards, medical devices, inspection devices, refrigerators, and washing machines. In this specification, a television (TV) is explained as an example of a display device, and the TV may have a high resolution to an ultra-high resolution such as HD, UHD, 4K, 8K, etc.

[0068] Furthermore, the display device 10 according to an embodiment can be variously classified according to the display mode. For example, the classification of display devices may include organic light emitting display devices (OLED), inorganic light emitting display devices (inorganic EL), quantum dot light emitting display devices (QED), micro-LED display devices (micro-LED), nano-LED display devices (nano-LED), plasma display devices (PDP), field emission display devices (FED), cathode ray tube display devices (CRT), liquid crystal display devices (LCD), electrophoretic display devices (EPD), etc. In the following, as a display device, a micro-LED display device is used as an example for explanation. Unless special distinction is required, the micro-LED display device applied to the embodiment is simply referred to as a display device. However, the embodiment is not limited to the micro-LED display device, and other display devices listed above or known in the technical field may also be applied within the scope of the shared technical idea.

[0069] Also, in the following drawings, the first direction DR1 indicates the lateral direction of the display device 10, the second direction DR2 indicates the longitudinal direction of the display device 10, and the third direction DR3 indicates the thickness direction of the display device 10. In this case, "left", "right", "upper", and "lower" indicate directions when the display device 10 is viewed from a plane. For example, "right side" indicates one side of the first direction DR1, "left side" indicates the other side of the first direction DR1, "upper side" indicates one side of the second direction DR2, and "lower side" indicates the other side of the second direction DR2. Also, "upper" indicates one side of the third direction DR3, and "lower" indicates the other side of the third direction DR3.

[0070] The display device 10 according to an embodiment may have a circular shape, an elliptical shape, or a square shape in a plan view, for example, it may also have a square shape. Furthermore, when the display device 10 is a television, it may also have a rectangular shape with a long side in the horizontal direction. However, this is not limited to this, and the long side may be in the vertical direction, and it may also be configured to be rotatable so that the long side can be variably in the horizontal or vertical direction.

[0071] The display device 10 may include a display area DPA and a non-display area NDA. The display area DPA may be an effective area for realizing the display of an image. The display area DPA may have a square shape in a plan view similar to the overall shape of the display device 10, but is not limited thereto and may be a circular or elliptical shape.

[0072] The display area DPA may include a plurality of pixels PX. The plurality of pixels PX may be arranged in rows and columns. The shape of each pixel PX may be a rectangle or a square in a plan view, but is not limited thereto, and may also be a rhombus shape in which each side is inclined relative to a side direction of the display device 10. The plurality of pixels PX may include a plurality of color pixels PX. For example, the plurality of pixels PX may include a first color pixel PX of red, a second color pixel PX of green, and a third color pixel PX of blue, but is not limited thereto. The color pixels PX may be arranged alternately in a stripe type or a five-tile type.

[0073] The non-display area NDA may be arranged around the display area DPA. The non-display area NDA may surround the display area DPA in whole or in part. The display area DPA may have various shapes such as a circle or a square. The non-display area NDA may be formed in a form surrounding the periphery of the display area DPA. The non-display area NDA may be formed using a frame of the display device.

[0074] The driving circuit or driving element driving the display area DPA may be arranged in the non-display area NDA. Figure 1 In the non-display area NDA arranged adjacent to the lower side of the display device 10, the pad portion may be provided on the support substrate 110 of the display device 10 (refer to Figure 4 ), the external device EXD may be mounted on the pad electrode of the pad portion. Examples of the external device EXD may include a connection film, a printed circuit board, a driver chip DIC, a connector, a wiring connection film, etc. Figure 1 In the non-display area NDA arranged adjacent to the left side of the display device 10, a scan driving part SDR or the like directly formed on the support substrate 110 of the display device 10 may be arranged.

[0075] Figure 2 is a plan view schematically showing a light emitting region of each pixel according to an embodiment.

[0076] Reference Figure 2 The plurality of pixels PX may be arranged in rows and columns, and the plurality of pixels PX may be divided into red first color pixels PX, green second color pixels PX, and blue third color pixels PX. Furthermore, a white fourth color pixel PX may be further included.

[0077] The pixel electrode of the first color pixel PX may be located in the first light emitting area EA1, and at least a portion thereof may be expanded to the non-light emitting area NEA. The pixel electrode of the second color pixel PX may be located in the second light emitting area EA2, and at least a portion thereof may be expanded to the non-light emitting area NEA. The pixel electrode of the third color pixel PX may be located in the third light emitting area EA3, and at least a portion thereof may be expanded to the non-light emitting area NEA. The pixel electrode of each pixel PX may penetrate at least one insulating layer and be connected to a switching element included in each pixel circuit.

[0078] A plurality of light emitting elements LE may be arranged on the pixel electrode of the first light emitting area EA1, the pixel electrode of the second light emitting area EA2, and the pixel electrode of the third light emitting area EA3. That is, the light emitting element LE is arranged in each of the first light emitting area EA1, the second light emitting area EA2, and the third light emitting area EA3. Moreover, a first red color filter, a second green color filter, and a third blue color filter may be formed respectively on the first light emitting area EA1, the second light emitting area EA2, and the third light emitting area EA3 where the plurality of light emitting elements LE are arranged. The first organic layer FOL may be arranged in the non-light emitting area NEA.

[0079] Figure 3 is a plan view schematically showing a light emitting region of each pixel according to another embodiment.

[0080] Reference Figure 3 The shape of each pixel PX in a plan view is not limited to a rectangle or a square, and may also be a rhombus shape with each side tilted relative to a side of the display device 10 to form a pentile structure. Accordingly, in each pixel PX of the pentile structure, the first light emitting area EA1 of the first color pixel PX, the second light emitting area EA2 of the second color pixel PX, the third light emitting area EA3 of the third color pixel PX, and the fourth light emitting area EA4 of one of the first color, second color, and third color pixels PX may be formed in a rhombus shape, respectively.

[0081] The size or plane area of ​​each of the first light emitting area EA1, the second light emitting area EA2, the third light emitting area EA3 and the fourth light emitting area EA4 of each pixel PX can be formed to be the same as or different from each other. Similarly, the number of light emitting elements LE formed in the first light emitting area EA1, the second light emitting area EA2, the third light emitting area EA3 and the fourth light emitting area EA4 can be formed to be the same as or different from each other.

[0082] The area of ​​the first light emitting area EA1, the area of ​​the second light emitting area EA2, the area of ​​the third light emitting area EA3, and the area of ​​the fourth light emitting area EA4 may be substantially the same, but are not limited thereto, and may also be different from each other. The distance between the first light emitting area EA1 and the second light emitting area EA2 adjacent to each other, the distance between the second light emitting area EA2 and the third light emitting area EA3 adjacent to each other, the distance between the first light emitting area EA1 and the third light emitting area EA3 adjacent to each other, and the distance between the third light emitting area EA3 and the fourth light emitting area EA4 adjacent to each other may be substantially the same, but may also be different from each other. The embodiments of the present specification are not limited thereto.

[0083] Furthermore, the first light emitting area EA1 may emit the first light, the second light emitting area EA2 may emit the second light, and the third light emitting area EA3 and the fourth light emitting area EA4 may emit the third light, but the embodiments of the present specification are not limited thereto. For example, the first light emitting area EA1 may emit the second light, the second light emitting area EA2 may emit the first light, and the third light emitting area EA3 and the fourth light emitting area EA4 may emit the third light. Alternatively, the first light emitting area EA1 may emit the third light, the second light emitting area EA2 may emit the second light, and the third light emitting area EA3 and the fourth light emitting area EA4 may emit the first light. Alternatively, at least one of the first light emitting area EA1, the second light emitting area EA2, the third light emitting area EA3 and the fourth light emitting area EA4 may emit the fourth light. The fourth light may be light of a yellow wavelength band. That is, the main peak wavelength of the fourth light may be located at approximately 550nm to 600nm, but the embodiments of the present specification are not limited thereto.

[0084] Figure 4 It is schematically shown Figure 2 A cross-sectional view of the A-A' section. And, Figure 5 It is schematically shown Figure 4 Magnified view of the P region.

[0085] Reference Figure 4 and Figure 5 , the display substrate 100 of the display device 10 may include a support substrate 110 , a thin film transistor layer TFTL disposed on the support substrate 110 , and a light emitting element portion LEP.

[0086] The support substrate 110 may be an insulating substrate. The support substrate 110 may include a transparent substance. For example, the support substrate 110 may include a transparent insulating substance such as glass, quartz, etc. The support substrate 110 may be a rigid substrate. However, the support substrate 110 is not limited thereto, and may also include a plastic such as polyimide, or may have a flexible property that can be twisted, bent, folded, or curled. A plurality of light-emitting areas EA1, EA2, EA3 and a non-light-emitting area NEA may be defined on the support substrate 110.

[0087] In one embodiment, the thin film transistor layer TFTL may include thin film transistors (eg, thin film transistors T1, T2, T3, see FIG. 1 ) including amorphous silicon, polycrystalline silicon, or an oxide semiconductor. Fig.17 ) and a plurality of insulating layers 130, 141, 142, 160, 180. The thin film transistors T1, T2, T3 may include a source S, a drain D, a gate G, and an active area ACT. In addition, although not shown in the drawings, the thin film transistor layer TFTL may also include a plurality of signal lines (e.g., gate lines, data lines, power lines, etc.) for transmitting signals to the respective thin film transistors T1, T2, T3.

[0088] The plurality of insulating layers 130, 141, 142, 160, 180 may be located on the thin film transistor. The plurality of insulating layers 130, 141, 142, 160, 180 may be planarization layers and may include organic matter. For example, the plurality of insulating layers 130, 141, 142, 160, 180 may include acrylic resin, epoxy resin, imide resin, ester resin, etc. In one embodiment, the plurality of insulating layers 130, 141, 142, 160, 180 may include a positive photosensitive material or a negative photosensitive material.

[0089] The light emitting element part LEP may be disposed on the insulating layer 180. The light emitting element part LEP may include a plurality of pixel electrodes PE1, PE2, PE3, a plurality of light emitting elements LE, and a common electrode CE.

[0090] The plurality of pixel electrodes PE1, PE2, PE3 may include a first pixel electrode PE1, a second pixel electrode PE2, and a third pixel electrode PE3. The first pixel electrode PE1, the second pixel electrode PE2, and the third pixel electrode PE3 may function as a first electrode of the light emitting element LE, and may be an anode electrode or a cathode electrode. The first pixel electrode PE1 is located in the first light emitting area EA1, and at least a portion thereof may extend to the non-light emitting area NEA. The second pixel electrode PE2 is located in the second light emitting area EA2, and at least a portion thereof may extend to the non-light emitting area NEA. The third pixel electrode PE3 is located in the third light emitting area EA3, and at least a portion thereof may extend to the non-light emitting area NEA. Each of the plurality of pixel electrodes PE1, PE2, PE3 may penetrate through the plurality of insulating layers 130, 141, 142, 160, 180 and be connected to the thin film transistors T1, T2, T3.

[0091] The first pixel electrode PE1, the second pixel electrode PE2, and the third pixel electrode PE3 may be reflective electrodes. The first pixel electrode PE1, the second pixel electrode PE2, and the third pixel electrode PE3 may have a material layer with a high work function (for example, titanium oxide (TiO 2 The first pixel electrode PE1, the second pixel electrode PE2 and the third pixel electrode PE3 may have a multilayer structure of ITO / Mg, ITO / MgF, ITO / Ag, ITO / Ag / ITO, but are not limited thereto.

[0092] The bank BNL may be located on the first pixel electrode PE1, the second pixel electrode PE2, and the third pixel electrode PE3. The bank BNL may include an opening portion exposing the first pixel electrode PE1, an opening portion exposing the second pixel electrode PE2, and an opening portion exposing the third pixel electrode PE3, and may define a first light emitting area EA1, a second light emitting area EA2, a third light emitting area EA3, and a non-light emitting area NEA. That is, the area in the first pixel electrode PE1 that is not covered by the bank BNL and is exposed may be the first light emitting area EA1. The area in the second pixel electrode PE2 that is not covered by the bank BNL and is exposed may be the second light emitting area EA2. The area in the third pixel electrode PE3 that is not covered by the bank BNL and is exposed may be the third light emitting area EA3. In addition, the area where the bank BNL is located may be the non-light emitting area NEA.

[0093] The bank BNL may include an organic insulating material, for example, polyacrylates resin, epoxy resin, phenolic resin, polyamides resin, polyimides rein, unsaturated polyesters resin, poly phenylenethers resin, polyphenylenesulfides resin or benzocyclobutene (BCB) resin, etc.

[0094] A plurality of light emitting elements LE may be arranged on the first pixel electrode PE1 , the second pixel electrode PE2 , and the third pixel electrode PE3 .

[0095] like Figure 4 and Figure 5 As shown in , the light emitting element LE may be arranged in each of the first light emitting area EA1, the second light emitting area EA2, and the third light emitting area EA3. The light emitting element LE may be a vertical light emitting diode element that extends longer along the third direction DR3. That is, the length of the light emitting element LE in the third direction DR3 may be greater than the length of the light emitting element LE in the horizontal direction. The length in the horizontal direction refers to the length in the first direction DR1 or the length in the second direction DR2. For example, the length of the light emitting element LE in the third direction DR3 may be about 1 μm to 5 μm.

[0096] The light emitting element LE may be a micro light emitting diode element. The light emitting element LE may include a connection electrode 125, a first semiconductor layer SEM1, an electron blocking layer EBL, an active layer MQW, a superlattice layer SLT, a second semiconductor layer SEM2, and a third semiconductor layer SEM3 in the thickness direction (i.e., the third direction DR3) of the display substrate 100. The connection electrode 125, the first semiconductor layer SEM1, the electron blocking layer EBL, the active layer MQW, the superlattice layer SLT, the second semiconductor layer SEM2, and the third semiconductor layer SEM3 may be stacked in sequence in the third direction DR3.

[0097] The light emitting element LE may have a cylindrical, disk or rod shape with a width longer than a height. However, the light emitting element LE is not limited thereto, and may have a rod, wire, tube, or the like, a cube, a cuboid, a hexagonal prism, or other multi-prism shape, or may have a shape extending in one direction and having a partially inclined outer surface, or the like.

[0098] The connection electrode 125 may be disposed on an upper portion of each of the plurality of pixel electrodes PE1, PE2, PE3. Hereinafter, the light emitting element LE disposed on the first pixel electrode PE1 is taken as an example for description.

[0099] The connection electrode 125 may be bonded to the first pixel electrode PE1 to apply a light emitting signal to the light emitting element LE. The connection electrode 125 may be an Ohmic connection electrode. However, it is not limited thereto and may also be a Schottky connection electrode. The light emitting element LE may include at least one connection electrode 125. Figure 5 and Figure 6 1 shows a case where the light emitting element LE includes one connecting electrode 125, but the present invention is not limited thereto. Depending on the situation, the light emitting element LE may include a larger number of connecting electrodes 125, or may be omitted. Even if the number of connecting electrodes 125 is different or other structures are included, the description of the light emitting element LE described later may also be applied in the same manner.

[0100] In the display device 10 according to an embodiment, when the light emitting element LE is electrically connected to the first pixel electrode PE1, the connection electrode 125 can reduce the resistance between the light emitting element LE and the first pixel electrode PE1, and can improve the adhesion. The connection electrode 125 may include a metal oxide having conductivity. For example, the connection electrode 125 may be ITO. The connection electrode 125 may be directly in contact with the first pixel electrode PE1 at the bottom and connected, and thus may be formed of the same material as the first pixel electrode PE1. Accordingly, the adhesion between the connection electrode 125 and the first pixel electrode PE1 is improved, thereby increasing the contact characteristics.

[0101] Reference Figure 5 In an exemplary embodiment, the first pixel electrode PE1 may include a lower electrode layer P1, a reflective layer P2, and an upper electrode layer P3. The lower electrode layer P1 may be disposed at the lowermost portion of the first pixel electrode PE1 and electrically connected to the switching element. The lower electrode layer P1 may include a metal oxide, for example, titanium oxide (TiO 2 : Titanium oxide), indium tin oxide (ITO: indium tin oxide), indium zinc oxide (IZO: indium zinc oxide), zinc oxide (ZnO: zinc oxide), indium tin zinc oxide (ITZO: indium tin zinc oxide) or magnesium oxide (MgO: magnesium oxide).

[0102] The reflective layer P2 may be disposed on the lower electrode layer P1 and reflect light emitted from the light emitting element LE upward. The reflective layer P2 may include a metal having a high reflectivity, for example, silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), lead (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), or a mixture thereof.

[0103] The upper electrode layer P3 may be arranged on the reflective layer P2 and directly contact the light emitting element LE. The upper electrode layer P3 may be arranged between the reflective layer P2 and the connection electrode 125 of the light emitting element LE and directly contact the connection electrode 125. As described above, the connection electrode 125 is made of metal oxide, and the upper electrode layer P3 may also be made of metal oxide like the connection electrode 125. For example, the upper electrode layer P3 may include titanium oxide (TiO 2In the exemplary embodiment, when the connection electrode 125 is formed of ITO, the first pixel electrode PE1 may be formed of a multilayer structure of ITO / Ag / ITO.

[0104] The first semiconductor layer SEM1 may be disposed on the connection electrode 125. The first semiconductor layer SEM1 may be a p-type semiconductor, and may include a semiconductor layer having a chemical formula of Al x Ga y In 1-x-y The first semiconductor layer SEM1 may be a semiconductor material of N (0≤x≤1, 0≤y≤1, 0≤x+y≤1). For example, it may be one or more of AlGaInN, GaN, AlGaN, InGaN, AlN and InN doped as p-type. The first semiconductor layer SEM1 may be doped with a p-type dopant, and the p-type dopant may be Mg, Zn, Ca, Ba, etc. For example, the first semiconductor layer SEM1 may be p-GaN doped with p-type Mg. The thickness of the first semiconductor layer SEM1 may range from 30nm to 200nm, but is not limited thereto.

[0105] The electron blocking layer EBL may be disposed on the first semiconductor layer SEM1. The electron blocking layer EBL may be a layer for suppressing or preventing excessive electrons from flowing into the active layer MQW. For example, the electron blocking layer EBL may be p-AlGaN doped with p-type Mg. The thickness of the electron blocking layer EBL may have a range of 10 nm to 50 nm, but is not limited thereto. Also, the electron blocking layer EBL may be omitted.

[0106] The active layer MQW may be disposed on the electron blocking layer EBL. The active layer MQW may emit light according to an electrical signal applied through the first semiconductor layer SEM1 and the second semiconductor layer SEM2 and by combining electron-hole pairs. The active layer MQW may emit first light (i.e., light of a blue wavelength band) having a central wavelength band ranging from 450 nm to 495 nm.

[0107] The active layer MQW may include a material of a single quantum well structure or a multi-quantum well structure. In the case where the active layer MQW includes a material of a multi-quantum well structure, it may also be a structure in which a plurality of well layers and barrier layers are alternately stacked with each other. In this case, the well layer may be formed using InGaN, and the barrier layer may be formed using GaN or AlGaN, but is not limited thereto. The thickness of the well layer may be about 1 nm to 4 nm, and the thickness of the barrier layer may be 3 nm to 10 nm.

[0108] Alternatively, the active layer MQW may also be a structure in which semiconductor materials with a large band gap and semiconductor materials with a small band gap are alternately stacked, and may also include other group III to group V semiconductor materials according to the wavelength band of the emitted light. The light emitted by the active layer MQW is not limited to the first light, and the second light (light in the green wavelength band) or the third light (light in the red wavelength band) may also be emitted according to the circumstances.

[0109] The superlattice layer SLT may be arranged on the active layer MQW. The superlattice layer SLT may be a layer for relieving stress between the second semiconductor layer SEM2 and the active layer MQW. For example, the superlattice layer SLT may be formed using InGaN or GaN. The thickness of the superlattice layer SLT may be about 50nm to 200nm. The superlattice layer SLT may be omitted.

[0110] The second semiconductor layer SEM2 may be disposed on the superlattice layer SLT. The second semiconductor layer SEM2 may be an n-type semiconductor. The second semiconductor layer SEM2 may include a semiconductor having a chemical formula of Al x Ga y In 1-x-y The second semiconductor layer SEM2 may be a semiconductor material of N (0≤x≤1, 0≤y≤1, 0≤x+y≤1). For example, it may be one or more of AlGaInN, GaN, AlGaN, InGaN, AlN and InN doped to n-type. The second semiconductor layer SEM2 may be doped with an n-type dopant, and the n-type dopant may be Si, Ge, Se, Sn, etc. For example, the second semiconductor layer SEM2 may be n-GaN doped with n-type Si. The thickness of the second semiconductor layer SEM2 may range from 2 μm to 4 μm, but is not limited thereto.

[0111] The third semiconductor layer SEM3 may be arranged on the second semiconductor layer SEM2. The third semiconductor layer SEM3 may be arranged between the second semiconductor layer SEM2 and the common electrode CE. The third semiconductor layer SEM3 may be an undoped semiconductor. The third semiconductor layer SEM3 may include the same substance as the second semiconductor layer SEM2, and may be a substance not doped with an n-type or p-type dopant. In an exemplary embodiment, the third semiconductor layer SEM3 may be at least one of undoped InAlGaN, GaN, AlGaN, InGaN, AlN, and InN, but is not limited thereto.

[0112] The planarization layer PLL may be arranged on the bank BNL and the plurality of pixel electrodes PE1, PE2, and PE3. The planarization layer PLL may planarize the step difference at the lower portion so that the common electrode CE described later may be formed. The planarization layer PLL may be formed to a predetermined height so that at least a portion (e.g., an upper portion) of the plurality of light emitting elements LE may protrude toward the upper portion of the planarization layer PLL. That is, with the upper surface of the first pixel electrode PE1 as a reference, the height of the planarization layer PLL may be less than the height of the light emitting element LE.

[0113] The planarization layer PLL may include an organic substance to planarize the lower step difference. For example, the planarization layer PLL may include acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylenether resin, polyphenylenesulfide resin, or benzocyclobutene (BCB: benzocyclobutene) resin, etc.

[0114] The common electrode CE may be arranged on the planarization layer PLL and the plurality of light emitting elements LE. Specifically, the common electrode CE may be arranged on a surface of the support substrate 110 on which the light emitting elements LE are formed, and may be arranged throughout the display area DPA and the non-display area NDA. The common electrode CE may be arranged to overlap with each of the light emitting areas EA1, EA2, EA3 in the display area DPA, and may be formed to be thin in thickness so as to be able to emit light.

[0115] The common electrode CE may be directly disposed on the upper surface and the side surface of the plurality of light emitting elements LE. The common electrode CE may be in direct contact with the second semiconductor layer SEM2 and the third semiconductor layer SEM3 on the side surface of the light emitting element LE. Figure 4 and Figure 5 As shown, the common electrode CE may cover a plurality of light emitting elements LE, and may be a common layer arranged to connect the plurality of light emitting elements LE in common. Since the second semiconductor layer SEM2 having conductivity is a structure patterned separately in the light emitting elements LE, the common electrode CE may directly contact the side surface of the second semiconductor layer SEM2 of each light emitting element LE, so that a common voltage may be applied to each light emitting element LE.

[0116] Since the common electrode CE is arranged on the entire support substrate 110 to apply a common voltage, it may include a material having a low resistance. Also, the common electrode CE may be formed to have a thin thickness so that light is easily transmitted. For example, the common electrode CE may include a material having a low resistance such as aluminum (Al), silver (Ag), copper (Cu), etc. The thickness of the common electrode CE may be greater than to But it is not limited to this.

[0117] The light emitting element LE may receive a pixel voltage or an anode voltage from the pixel electrode through the connection electrode 125 and may receive a common voltage through the common electrode CE. The light emitting element LE may emit light at a predetermined brightness according to a voltage difference between the pixel voltage and the common voltage.

[0118] In this embodiment, a plurality of light emitting elements LE (ie, inorganic light emitting diodes) are arranged on the pixel electrodes PE1, PE2, PE3, thereby eliminating the disadvantage of organic light emitting diodes being affected by external moisture or oxygen and improving life and reliability.

[0119] In addition, the first organic layer FOL may be disposed on the bank BNL disposed in the non-emission area NEA.

[0120] The first organic layer FOL may be arranged overlapping the non-emission area NEA and not overlapping the emission areas EA1, EA2, EA3. The first organic layer FOL may be arranged directly on the bank BNL and may be arranged spaced apart from the adjacent plurality of pixel electrodes PE1, PE2, PE3. The first organic layer FOL may be arranged on the entire support substrate 110 and may be arranged around the plurality of emission areas EA1, EA2, EA3. The first organic layer FOL may be arranged in a lattice shape as a whole.

[0121] As described in the manufacturing process described later, the first organic layer FOL can play a role in separating the multiple light-emitting elements LE on the first organic layer FOL that is in contact with the non-light-emitting area NEA. When irradiated with laser, the first organic layer FOL absorbs energy and the temperature rises instantly, resulting in ablation. Accordingly, the multiple light-emitting elements LE in contact with the upper surface of the first organic layer FOL can be separated from the upper surface of the first organic layer FOL.

[0122] The first organic layer FOL may include a polyimide compound. The polyimide compound of the first organic layer FOL may include a cyano group to absorb light (e.g., laser) with a wavelength of 308 nm. In an exemplary embodiment, the first organic layer FOL and the dam BNL may include polyimide compounds respectively, but may also include polyimide compounds different from each other. For example, the dam BNL may be formed using a polyimide compound that does not include a cyano group, and the first organic layer FOL may be formed using a polyimide compound that includes a cyano group. For a laser with a wavelength of 308 nm, the transmittance of the first organic layer FOL may be less than the transmittance of the dam BNL, and the transmittance of the dam BNL may be about 60% or more, and the transmittance of the first organic layer FOL may be 0%. Furthermore, the absorptivity of the first organic layer FOL to the laser with a wavelength of 308 nm may be 100%. The first organic layer FOL may be formed to be about to 10 μm. If the thickness of the first organic layer FOL is If the thickness of the first organic layer FOL is less than 10 μm, the step difference between the first organic layer FOL and the pixel electrode PE1 can be prevented from increasing, so that the light emitting element LE can be easily bonded to the pixel electrode in the process described later.

[0123] In manufacturing reference Figures 1 to 5 The process of manufacturing the display device 10 described above may include a process of transferring the light emitting element LE grown on the wafer to the supporting substrate 110 of the display device 10 .

[0124] In the case of the transfer process, the plurality of light emitting elements LE grown on the wafer may first be transferred to a transfer film formed of a polymer film and having stretchability. Furthermore, the distance between the plurality of light emitting elements LE may be adjusted by stretching the transfer film. Then, the light emitting elements LE on the stretched transfer film may be transferred to the supporting substrate 110 of the display device 10 to complete the formation of the display device 10.

[0125] At this time, in order to arrange the plurality of light emitting elements LE on the transfer film at a desired interval, it is necessary to control the stretching ratio of the transfer film.

[0126] The stretching equipment according to an embodiment can easily and accurately control the stretching ratio of the transfer film.

[0127] Figure 6 is a plan view for illustrating a transfer film on which a light emitting element is arranged according to an embodiment of the present utility model, Figure 7 It is a side view of a transfer film according to an embodiment of the utility model.

[0128] Reference Figure 6 and Figure 7 The transfer film ES is used to transfer the light emitting element LE grown on the silicon wafer to the display substrate 100 ( Figure 4 ) of the support substrate 110 ( Figure 4 ) on the substrate, so it can also be called a transfer substrate.

[0129] The transfer film ES can be formed using a transparent and stretchable elastic polymer. For example, the stretchable elastic polymer may include polyolefine, polyvinyl chloride (PVC: Polyvinylchloride), elastic polysiloxane (Elastomeric silicone), elastic polyurethane (Elastomericpolyurethane), elastic polyisoprene (Elastomeric polyisoprene), etc. The transfer film ES can be formed using a support layer ES-1 and an adhesive layer ES-2 arranged on the support layer ES-1. The support layer ES-1 can be formed using a transparent and mechanically stable material to be able to transmit light. For example, the support layer ES-1 may include a transparent polymer such as polyester, polyacrylic acid, polyepoxy, polyethylene, polystyrene, polyethylene terephthalate, etc. The adhesive layer ES-2 may include an adhesive material for bonding the light-emitting element LE. For example, the adhesive material may include urethane acrylate, epoxy acrylate, polyester acrylate, etc. The adhesive substance may be a substance whose adhesive force changes with application of ultraviolet rays (UV) or heat, whereby the adhesive layer can be easily separated from the light emitting element LE.

[0130] The light emitting elements LE arranged on the transfer film ES may be arranged at a first interval d1. Here, the first interval d1 may be a distance from the center of any light emitting element LE to the center of an adjacent light emitting element LE.

[0131] The light emitting element LE may include a first light emitting element LE-a and a second light emitting element LE-b. The second light emitting element LE-b is different from the first light emitting element LE-a in that the second light emitting element LE-b has an alignment key IDK.

[0132] The alignment key IDK is a component for controlling the stretching rate in the stretching process. The alignment key IDK can be formed using a mask when the light emitting element LE grows. The alignment key IDK can be formed using a material with excellent reflectivity and conductivity (for example, a material including silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), lead (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca) or a mixture thereof), but is not limited thereto.

[0133] In one embodiment, the alignment key IDK is shown to be in a cross shape, but in addition to the cross shape, the alignment key IDK can also be formed in various shapes such as a circular shape, a circular ring shape, a quadrilateral shape, etc., but is not limited thereto.

[0134] Figure 8 is a perspective view schematically showing a manufacturing device of a display panel according to an embodiment. And, Fig. 9 It specifically shows Figure 8 A cross-sectional view of the fixed frame and the tensile processing components shown.

[0135] Reference Figure 8 and Fig. 9 The manufacturing device 500 of the display panel includes a fixing frame 511 , a film installation component 510 , an optical inspection component 520 , and a stretching processing component 550 . The manufacturing device 500 of the display panel may further include a housing 501 .

[0136] Specifically, the fixing frame 511 fixes the periphery of the transfer film ES on which the plurality of light emitting elements LE are arranged. The fixing frame 511 includes a pair of first assembly frames 511a and second assembly frames 511b each having a circular opening. Here, the first assembly frame 511a and the second assembly frame 511b are formed into a polygonal plate or frame form such as a circle or a quadrilateral having a circular opening. The first assembly frame 511a and the second assembly frame 511b may also be formed into a circular ring or an annular frame form.

[0137] The first assembly frame 511a and the second assembly frame 511b are assembled in a state where they face each other. Furthermore, the first assembly frame 511a and the second assembly frame 511b can also be assembled in a state where the first assembly frame 511a is inserted into the interior of another second assembly frame 511b. Such first assembly frame 511a and second assembly frame 511b press and fix the periphery of the transfer film ES except the opening area in a circular shape by means of a circular opening and a peripheral frame of the opening. The opening structure of the first assembly frame 511a and the second assembly frame 511b can be formed into a polygonal shape such as an ellipse or a quadrilateral according to the stretching direction of the transfer film ES, but in order to make the stretching direction of the transfer film ES uniform, preferably, a circular opening is used to press and fix the periphery of the transfer film ES in a circular shape.

[0138] The film installation member 510 is installed on the upper part or inside of the housing 501 that forms the outer shape or frame of the manufacturing device 500 of the display panel. The film installation member 510 includes a placement portion where the fixing frame 511 is placed and at least one clip or annular fastening member that presses and fixes the outer surface of the fixing frame 511. The film installation member 510 fixes the fixing frame 511 by fastening at least one periphery of the fixing frame 511 placed on the front surface placement portion using at least one clip or annular fastening member. Thus, the position of the fixing frame 511 is fixed while the transfer film ES is stretched by the stretching treatment member 550.

[0139] Fig.10 It is shown Fig. 9 An exploded perspective view of another form of the membrane mounting component shown.

[0140] Reference Fig.10 , the film mounting member 510 includes a first mounting frame 510a on which a fixing frame 511 is mounted, and a second mounting frame 510b which presses and fixes a portion of a front surface and a periphery of the fixing frame 511 mounted on the first mounting frame 510a.

[0141] The first mounting frame 510a is formed in a polygonal plate or frame shape such as a circle or a quadrilateral with a circular opening, and is mounted on the upper part or the inner side of the housing 501. In addition, the second mounting frame 510b may also be formed in a polygonal plate or frame shape such as a circle or a quadrilateral with a circular opening, and is assembled in a state facing the first mounting frame 510a. That is, the first mounting frame 510a and the second mounting frame 510b may be assembled to face and overlap each other, so that the fixed frame 511 can be fixed by pressurizing the periphery and a part of the front and rear surfaces of the fixed frame 511 except the circular opening area in a circular shape.

[0142] Refer again Fig. 9 The optical inspection component 520 includes at least one pair of a light source 523 and a light receiving sensor 522 that are paired with each other.

[0143] The light source 523 and the light receiving sensor 522 are arranged on the same axis along the third direction DR3. The light receiving sensor 522 may be arranged on a path of light irradiated by the light source 523 to detect an amount of received light.

[0144] In one embodiment, the light source 523 is arranged at the upper part and the light receiving sensor 522 is arranged at the lower part, but it is not limited thereto, and the light source 523 may be arranged at the lower part and the light receiving sensor 522 may be arranged at the upper part.

[0145] The light source 523 and the light receiving sensor 522 may be arranged with a plate frame 551 of the stretching processing unit 550 described later interposed therebetween. The light receiving sensor 522 may be arranged on the rear surface of the plate frame 551, and the light source 523 may be arranged on one surface of the plate frame 551 at a distance.

[0146] The light receiving sensor 522 may receive light irradiated from the light source 523 through a through hole 551 h penetrating through the plate-shaped frame 551 .

[0147] The light source 523 , the light receiving sensor 522 , and the through hole 551 h are coaxially located in the third direction DR3 . The light receiving sensor 522 and the through hole 551 h are formed on the path of light emitted from the light source 523 .

[0148] The light receiving sensor 522 may receive light irradiated from the light source 523 located on the same axis and passing through the through hole 551 h .

[0149] Reference Figure 8 and Fig. 9 The stretching processing component 550 presses the transfer film ES (i.e., the transfer film on which the light emitting elements LE are arranged) fixed by the film mounting component 510 and the fixing frame 511 in one direction, so that the entire width of the transfer film ES is stretched toward the peripheral direction. Specifically, the stretching processing component 550 can pressurize the rear surface of the transfer film ES on which the light emitting elements LE are arranged in the front surface direction, so that the entire width of the transfer film ES is stretched toward the peripheral direction.

[0150] The stretching processing part 550 includes a plate-shaped frame 551 and a transfer driving part 553 .

[0151] The plate-shaped frame 551 may be formed in a disc-shaped or polygonal plate shape. The plate-shaped frame 551 may include one or more through holes 551h as described above.

[0152] The transfer drive component 553 supports the rear surface of the plate-shaped frame 551 and moves the plate-shaped frame 551 in the front surface direction or the rear surface direction of the plate-shaped frame 551, so that the rear surface of the transfer film ES is pressurized in the front surface direction. The transfer drive component 553 can be formed as a hydraulic pump type such as a piston. The transfer drive component 553 can control the degree of stretching of the transfer film ES based on the amount of light detected by the optical inspection component 520. In the case where the amount of light detected by the optical inspection component 520 changes sharply, the stretching processing component 550 can confirm that the position of the alignment key IDK is located on the light path. Thereby, the stretching processing component 550 stops the movement of the transfer drive component 553. Thereby, the stretching of the transfer film ES arranged on the plate-shaped frame 551 can be terminated. Regarding the control of the degree of stretching, refer to Figures 27 to 30 This will be described later.

[0153] Fig.11 It is a plan view for explaining a light emitting element arranged on a transfer film according to an embodiment of the present invention. Fig.12 1 is a diagram for explaining a light emitting element arranged on a transfer film according to another embodiment of the present invention. Fig.13 It is a diagram for explaining a light emitting element arranged on a transfer film according to still another embodiment of the present invention.

[0154] Reference Fig.11 , a plurality of light emitting elements LE may be arranged on the transfer film at a first interval d1. Here, the interval may be a distance from the center of a light emitting element LE to the center of a light emitting element LE adjacent to the light emitting element.

[0155] The first light emitting element LE-a and the second light emitting element LE-b are arranged to be spaced apart from each other. The spaced distance d11 between the first light emitting element LE-a and the second light emitting element LE-b and the spaced distance d12 between the first light emitting elements LE-a are the same as each other.

[0156] The second light emitting element LE-b is different from the first light emitting element LE-a in that the second light emitting element LE-b has an alignment key IDK. The alignment key IDK of the second light emitting element LE-b is a mark for aligning the stretching degree of the transfer film ES. For example, the optical inspection component 520 ( Fig. 9 ) can recognize the alignment key IDK to control the stretching degree.

[0157] The light emitting element adjacent to the second light emitting element LE-b may be the first light emitting element LE-a. The number of the first light emitting elements LE-a may be greater than the number of the second light emitting elements LE-b.

[0158] The second light emitting element LE-b may be arranged at the outermost side of the array of the plurality of light emitting elements LE.

[0159] In order to make it easy for the optical inspection component 520 to identify the alignment key IDK, as shown in FIG. Fig.12 As shown, the area of ​​the second light emitting element LE-b' may be formed to be larger than the area of ​​the first light emitting element LE-a. Here, the area may refer to the width of the plane in the first direction DR1 and the second direction DR2. The width Wb of the second light emitting element LE-b' may be formed to be larger than the width Wa of the first light emitting element LE-a.

[0160] Fig.13 The difference is that only the alignment key IDK is arranged instead of Fig.11 The second light emitting element LE-b.

[0161] In the case where the second light emitting element LE-b is not arranged and the alignment key IDK is arranged, the alignment key IDK may be stretched together with the stretching of the transfer film ES. In the case where the alignment key IDK is stretched, the reflectivity may be reduced, so the height of the alignment key IDK in the third direction DR3 may be formed to be more than 20% of the height of the first light emitting element LE-a, so that even if the alignment key IDK is stretched, the optical inspection component 520 can recognize the change in reflectivity.

[0162] and, Fig.13 In the case of, although not shown, the optical inspection part 520 can confirm the stretching rate by confirming the position of the alignment key IDK through a camera. The camera can be arranged on the upper part of the plate-shaped frame 551 of the stretching processing part 550.

[0163] In another embodiment, the optical inspection component 520 can use an optical camera to replace a pair of light sources and light receiving sensors. In the case of using an optical camera, the position of the optical camera can be arranged at Fig. 9 The position of the light source 523 is, but is not limited to, the position as long as the alignment key IDK can be photographed under the viewing angle of the optical camera.

[0164] Fig.14 is schematically shown along Fig.11 A cross-sectional view of the S-S' cut plane.

[0165] Although in Fig.14 Although not shown, the first light emitting element LE-a may be stacked with a third semiconductor layer SEM3, a second semiconductor layer SEM2, a superlattice layer SLT, an active layer MQW, an electron blocking layer EBL, a first semiconductor layer SEM1 and a connecting electrode 125 in sequence in the thickness direction of the transfer film ES (ie, the third direction DR3).

[0166] The second light emitting element LE-b may have a third semiconductor layer SEM3, a second semiconductor layer SEM2, a superlattice layer SLT, an active layer MQW, an electron blocking layer EBL, a first semiconductor layer SEM1, a connection electrode 125 and an alignment key IDK sequentially stacked in the thickness direction of the transfer film ES (ie, the third direction DR3).

[0167] like Fig.14 As shown, the alignment key IDK of the second light emitting element LE-b is disposed on the connection electrode 125. Therefore, a height h2 of the second light emitting element LE-b may be higher than a height h1 of the first light emitting element LE-a.

[0168] In addition, the transfer film ES and the connection electrode 125 can be formed of a material having a transmittance at least higher than that of the alignment key IDK. Only when the transfer film ES and the connection electrode 125 are formed of a material having a transmittance higher than that of the alignment key IDK can the alignment key IDK be easily identified. If the transmittance of the alignment key IDK is similar to that of the transfer film ES and the connection electrode 125, it may be difficult to identify the alignment key IDK. Accordingly, the alignment key IDK is formed to be opaque, so that the contrast between the alignment key IDK and the remaining components of the transfer film ES can be improved, and the alignment key IDK can be easily identified.

[0169] Fig.15 The invention is a block diagram showing a processor and a memory of a manufacturing device for a display panel according to an embodiment of the present invention.

[0170] Reference Fig.15 According to an embodiment, the manufacturing apparatus 500 of a display panel may further include a processor 560 and a memory 570 .

[0171] The processor 560 may be embedded in the manufacturing apparatus 500 of the display panel, and may control the overall operation of the manufacturing apparatus 500 of the display panel. Meanwhile, the processor 560 may perform a function of controlling the overall operation of the manufacturing apparatus 500 of the display panel.

[0172] The processor 560 can implement the manufacturing method of the display panel described later through the manufacturing device 500 of the display panel. The processor 560 can be electrically connected to the optical inspection component 520 and the stretching processing component 550, so as to control each component. For example, the processor 560 can control the stretching degree or stretching rate of the stretching processing component 550 based on the detection result of the optical inspection component 520.

[0173] However, the present invention is not limited to controlling all components by one processor 560 , and a plurality of independent processors may be used to control each component.

[0174] Here, the processor 560 may include one or more of a central processing unit (CPU), a controller, an application processor (AP), a communication processor (CP), and an ARM processor.

[0175] Meanwhile, the processor 560 is electrically connected to the memory 570 , and the specific functions of the processor 560 on the memory 570 according to an embodiment of the present invention will be described later.

[0176] The memory 570 may be embedded in the display panel manufacturing device 500. Meanwhile, the memory 570 may be implemented as at least one of a flash memory, a read-only memory (ROM), a random access memory (RAM), a hard disk, a micro multimedia card, and a card-type memory (e.g., an SD or XD memory, etc.).

[0177] Meanwhile, the memory 570 may be electrically connected to the processor 560 so that signals and information may be transmitted between the memory 570 and the processor 560. Accordingly, the memory 570 may store input or detected information for controlling the stretching treatment part 550 so that the stored characteristic information may be transmitted to the processor 560.

[0178] The information for controlling the stretch processing part 550 may be a reference light amount for stopping the movement of the movement driving part 553 of the stretch processing part 550 .

[0179] The processor 560 starts the transfer of the transfer driving part 553 of the stretching processing part 550, and monitors the amount of light detected by the optical inspection part 520. In the case where the amount of light changes suddenly, the processor 560 may stop the transfer of the transfer driving part 553. Thus, the degree of stretching of the transfer film ES disposed on the stretching processing part 550 may be controlled.

[0180] Fig.16 It is used for illustration purposes Figure 8 and Fig. 9 A flowchart of a method for manufacturing a display panel of a manufacturing device. And, Figures 17 to 23 is a cross-sectional view for explaining a method for manufacturing a light emitting element according to an embodiment.

[0181] First, a display substrate including a pixel circuit and a pixel electrode is prepared. Fig.16 S100).

[0182] Specifically, refer to Fig.17 When manufacturing the display substrate 100, a thin film transistor T1 is formed on the support substrate 110, and an insulating layer 180 is formed on the thin film transistor T1. The support substrate 110 may be a transparent insulating substrate, or a glass or quartz substrate. The insulating layer 180 may be formed with a contact hole exposing the thin film transistor T1.

[0183] Next, a transparent conductive material is stacked on the insulating layer 180 and patterned to form a plurality of pixel electrodes (e.g., a first pixel electrode PE1). The first pixel electrode PE1 may be connected to the thin film transistor T1 through a contact hole formed in the insulating layer 180. Furthermore, a first organic material is coated on the supporting substrate 110 and patterned to form a bank BNL. The bank BNL divides the first light emitting area EA1 by exposing the first pixel electrode PE1 at the bottom.

[0184] Then, a second organic substance is coated on the support substrate 110 and patterned to form a first organic layer FOL. The first organic layer FOL may be formed on the bank BNL and may be arranged apart from the first emission area EA1. As described above, the first organic layer FOL may be polyimide including a cyano group.

[0185] Next, refer to Fig.18 and Fig.19 , a light emitting element LE can be formed independently on the base substrate BSUB ( Fig.16 At this time, prepare the sapphire substrate (Al 2 O 3 ) or a silicon wafer including silicon as the base substrate BSUB. Furthermore, a plurality of semiconductor material layers SEM3L, SEM2L, SLTL, MQML, EBLL, SEM1L are formed on the base substrate BSUB. A plurality of semiconductor material layers grown by epitaxy can be formed by growing seed crystals. Here, the method of forming the semiconductor material layer can be electron beam deposition, physical vapor deposition (PVD: Physical vapor deposition), chemical vapor deposition (CVD: Chemical vapor deposition), plasma laser deposition (PLD: Plasma laser deposition), dual-type thermal evaporation, sputtering, metal-organic chemical vapor deposition (MOCVD: Metal organic chemical vapor deposition), etc. Preferably, it can be formed by metal-organic chemical vapor deposition (MOCVD). However, it is not limited thereto.

[0186] The precursor material for forming the plurality of semiconductor material layers is generally not particularly limited within a selectable range in order to form the target material. As an example, the precursor material may be a metal precursor including an alkyl group such as a methyl group or an ethyl group. For example, it may be a precursor such as trimethylgallium (Ga(CH 3 ) 3 ), trimethylaluminum (Al(CH 3 ) 3 ), triethyl phosphate ((C 2 H 5 ) 3 PO 4 ) and the like, but are not limited thereto.

[0187] Specifically, a third semiconductor material layer SEM3L is formed on the base substrate BSUB. The third semiconductor layer SEM3 is stacked as one layer in the drawings, but it is not limited thereto, and multiple layers may also be formed. The third semiconductor material layer SEM3L may be arranged to reduce the lattice constant difference between the second semiconductor material layer SEM2L and the base substrate BSUB. As an example, the third semiconductor material layer SEM3L may include an undoped semiconductor, and may be a material that is not doped to n-type or p-type. In an exemplary embodiment, the third semiconductor material layer SEM3L may be at least one of undoped InAlGaN, GaN, AlGaN, InGaN, AlN and InN, but is not limited thereto.

[0188] By using the above method, a second semiconductor material layer SEM2L, a superlattice material layer SLTL, an active material layer MQWL, an electron blocking material layer EBLL, and a first semiconductor material layer SEM1L are sequentially formed on the third semiconductor material layer SEM3L. Then, the plurality of semiconductor material layers SEM3L, SEM2L, SLTL, MQML, EBLL, and SEM1L are etched to form a plurality of light emitting elements LE.

[0189] Specifically, a plurality of first mask patterns MP1 are formed on the first semiconductor material layer SEM1L. The first mask pattern MP1 may be a hard mask containing an inorganic substance or a photoresist mask containing an organic substance. The first mask pattern MP1 prevents the lower plurality of semiconductor material layers SEM3L, SEM2L, SLTL, MQML, EBLL, SEM1L from being etched. Next, a plurality of light emitting elements LE are formed by etching a portion of the plurality of semiconductor material layers (first etching) using the plurality of first mask patterns MP1 as masks.

[0190] like Fig.19As shown, multiple semiconductor material layers SEM3L, SEM2L, SLTL, MQML, EBLL, and SEM1L that do not overlap with the first mask pattern MP1 can be etched and removed on the base substrate BSUB, and the portions that overlap with the first mask pattern MP1 but are not etched can be formed into multiple light emitting elements LE.

[0191] The semiconductor material layer can be etched by conventional methods. For example, the process of etching the semiconductor material layer can be dry etching, wet etching, reactive ion etching (RIE: Reactive ion etching), deep reactive ion etching (DRIE: Deep reactive ion etching), inductively coupled plasma reactive ion etching (ICP-RIE: Inductively coupled plasma reactive ion etching), etc. In the case of dry etching, anisotropic etching can be performed, so it can be suitable for vertical etching. In the case of etching using the above method, the etchant (Etchant) can be Cl 2 or 2 etc. However, it is not limited thereto.

[0192] The plurality of semiconductor material layers SEM3L, SEM2L, SLTL, MQML, EBLL, SEM1L overlapping the first mask pattern MP1 are not etched and are formed into a plurality of light emitting elements LE. Therefore, the plurality of light emitting elements LE are formed to include the third semiconductor layer SEM3, the second semiconductor layer SEM2, the superlattice layer SLT, the active layer MQW, the electron blocking layer EBL, and the first semiconductor layer SEM1.

[0193] Next, a connection electrode material layer is stacked on the base substrate BSUB and etched to form a connection electrode 125 on the plurality of light emitting elements LE. The connection electrode 125 may be formed directly on the upper surface of the first semiconductor layer SEM1 of the light emitting element LE. The connection electrode 125 may include a transparent conductive material. For example, the connection electrode 125 may be formed using a transparent conductive oxide (TCO) such as indium tin oxide (ITO) or indium zinc oxide (IZO). Furthermore, a metal layer with high reflectivity such as aluminum (Al), copper (Cu), or gold (Au) may be additionally formed on the upper portion of the connection electrode 125 formed using the transparent conductive oxide.

[0194] Then, an alignment key metal layer is stacked on the base substrate BSUB and patterned using a mask to form an alignment key IDK on the connection electrode 125 of the plurality of light emitting elements LE. The alignment key IDK may include a conductive material with high reflectivity. The alignment key IDK may be formed using a material having a reflectivity at least higher than that of the connection electrode 125. For example, the alignment key IDK may be formed using aluminum (Al), copper (Cu), or gold (Au).

[0195] By forming the alignment key IDK to be opaque, the contrast with the connection electrode 125 can be improved, and the alignment key IDK can be easily recognized.

[0196] Reference Figure 20 to Figure 23 In order to change the arrangement width of the plurality of light emitting elements LE formed on the base substrate BSUB (i.e., the arrangement interval between the plurality of light emitting elements LE), after the upper surfaces of the plurality of light emitting elements LE are attached to the support film SPF and moved, the process of attaching the lower surfaces of the plurality of light emitting elements LE to the transfer film ES and moving them may be performed again ( Fig.16 S120).

[0197] To this end, a support film SPF is first attached to the plurality of light emitting elements LE formed on the base substrate BSUB. Accordingly, each connection electrode 125 of the plurality of light emitting elements LE can be attached to the support film SPF. The plurality of light emitting elements LE are arranged in plural, and thus can be attached without being separated from the support film SPF.

[0198] The support film SPF can be formed using a support layer and an adhesive layer arranged on the support layer. The support layer can be formed using a transparent and mechanically stable substance to be able to transmit light. For example, the support layer may include transparent polymers such as polyester, polyacrylic acid, polyepoxy, polyethylene, polystyrene, polyethylene terephthalate, etc. The adhesive layer may include an adhesive substance for bonding the light-emitting element LE. For example, the adhesive substance may include urethane acrylate, epoxy acrylate, polyester acrylate, etc. The adhesive substance may be a substance whose adhesive force changes with the application of ultraviolet rays (UV) or heat, based on which the adhesive layer can be easily separated from the light-emitting element LE.

[0199] Next, refer to Fig.21 The base substrate BSUB is irradiated with laser light (first laser light) to separate the base substrate BSUB. The base substrate BSUB is separated from each third semiconductor layer SEM3 of the plurality of light emitting elements LE.

[0200] Reference Fig. 22 and Fig.23, attach the transfer film ES to the plurality of light emitting elements LE separated by the base substrate BSUB. Attach the transfer film ES to each third semiconductor layer SEM3 of the plurality of light emitting elements LE. The transfer film ES can be aligned on the plurality of light emitting elements LE and can be attached to each third semiconductor layer SEM3 of the plurality of light emitting elements LE.

[0201] The transfer film ES may include a stretchable material. The stretchable material may include, for example, polyolefine, polyvinyl chloride (PVC: Polyvinyl chloride), elastic polysilicone (Elastomericsilicone), elastic polyurethane (Elastomericpolyurethane), elastic polyisoprene (Elastomericpolyisoprene), etc. Like the above-mentioned support film SPF, the transfer film ES may also include a support layer and an adhesive layer, so as to be able to bond and support a plurality of light emitting elements LE.

[0202] Reference Fig.23 , the support film SPF is separated from the plurality of light emitting elements LE. After the adhesive force of the adhesive layer of the support film SPF is reduced by applying ultraviolet rays or heat to the support film SPF, the support film SPF may be separated physically or naturally.

[0203] Fig.24 FIG. 1 is a perspective view schematically showing a transfer film of a light emitting element manufactured according to an embodiment. Fig.25 It is schematically shown Fig.24 The transfer film shown is a perspective view of a state in which the transfer film is mounted on the film mounting member.

[0204] Reference Fig.24 The transfer film ES in which a plurality of light emitting elements LE are arranged in a dot shape and spaced at a predetermined first interval is fixed by a fixing frame 511, and a plate-shaped frame 551 ( Fig. 9 ) is arranged on the transfer film ES ( Fig.16 Specifically, the transfer film ES is arranged between the first assembly frame 511a and the second assembly frame 511b of the fixed frame 511, which are assembled in a state facing each other. Accordingly, the first assembly frame 511a and the second assembly frame 511b pressurize the periphery and a part of the front and rear surfaces of the transfer film ES except the circular opening area in a circular shape through the circular opening, thereby fixing the periphery of the transfer film ES.

[0205] Reference Fig.25, the fixed frame 511 fixing the periphery of the transfer film ES is placed on the placement portion of the first mounting frame 510a formed with a circular opening. And, the second mounting frame 510b formed with a circular opening is assembled on the first mounting frame 510a in a manner facing the first mounting frame 510a, and the fixed frame 511 is placed therebetween. That is, the first mounting frame 510a and the second mounting frame 510b are assembled in a manner facing and overlapping each other, and the fixed frame 511 is placed therebetween, so that the periphery and a part of the front and rear surfaces of the fixed frame 511 except the circular opening area are pressurized in a circular shape, thereby fixing the fixed frame 511.

[0206] Fig.26 is a schematic diagram showing the arrangement of Fig.24 A front view of a portion of the arrangement of light-emitting elements on the first transfer film shown.

[0207] Fig.26 The state in which a plurality of light emitting elements LE are spaced apart at a first interval D1 and arranged in a dot shape on the transfer film ES fixedly arranged by the fixing frame 511 and the film mounting member 510 is shown.

[0208] Figures 27 to 30 These are a cross-sectional view and a front view for explaining a method of stretching a transfer film.

[0209] Reference Fig. 27 , using the optical inspection component 520 to monitor the amount of light reflected from the transfer film ES ( Fig.16 Then, the transfer film ES is stretched toward the outer periphery of the transfer film ES by the stretching processing component 550, and the stretching degree is controlled based on the detection result of the optical inspection component 520 ( Fig.16 S150).

[0210] For example, while the stretching treatment member 550 moves toward the rear surface direction of the transfer film ES (i.e., the direction of the Z-axis arrow), the rear surface of the transfer film ES is pressed in the direction of the front surface of the transfer film ES. Fig. 27 and Fig.28 As shown, the transfer film ES is stretched by the movement of the stretching treatment member 550 and the back surface pressurization. The transfer film ES may be stretched in two dimensions including the first direction DR1 and the second direction DR2.

[0211] The second light emitting element LE-b having the alignment key IDK may be arranged at the outermost contour of the transfer film ES.

[0212] Before the transfer film ES is stretched, the optical inspection part 520 may detect the first light quantity. In the optical inspection part 520, the light receiving sensor 522 may receive the light irradiated from the light source 523 and transmitted through the first transfer film ES at the first light quantity.

[0213] As the transfer film ES is stretched, the second light emitting element LE-b disposed at the outermost contour may be disposed on a light path of the optical inspection part 520 .

[0214] With the second light emitting element LE-b arranged on the light path, the optical inspection component 520 can detect the second light quantity. In the optical inspection component 520, most of the light irradiated from the light source 523 and transmitted through the first transfer film ES is reflected by the alignment key IDK, so that the light receiving sensor 522 can receive the second light quantity. Therefore, the second light quantity is less than the first light quantity.

[0215] As the transfer film ES is stretched, the plurality of light emitting elements LE bonded to the transfer film ES may be arranged at intervals of the second interval d2. That is, the plurality of light emitting elements LE may be arranged uniformly and at intervals of the second interval d2 greater than the first interval d1.

[0216] The stretch processing part 550 may stretch the transfer film ES until the alignment key IDK is disposed on the through hole 551h.

[0217] Reference Fig.29 and Fig.30 When the alignment key IDK is arranged on the through hole 551h, it can become the desired second interval D2 of the light emitting element LE. The position of the through hole 551h can be formed by performing an inverse operation on it. That is, the through hole 551h can be formed at a position where the desired second interval D2 of the light emitting element LE can be implemented.

[0218] Figure 31 to Figure 33 This is a cross-sectional view for explaining a method of moving and transferring a light-emitting element on a transfer film to a display panel.

[0219] Reference Fig.31 , the transfer film ES in which the plurality of light emitting elements LE are arranged at a second interval D2 is bonded to the display substrate 100, so that the plurality of light emitting elements LE are bonded to the display substrate 100, and the display panel can be manufactured. Before the process of bonding the plurality of light emitting elements LE to the display panel, at least one of the transfer film ES and the display substrate 100 may be cut to a size or area suitable for the product and then bonded.

[0220] Specifically, the connection electrode 125 and the alignment key IDK of the light emitting element LE formed on the transfer film ES are brought into contact with the first pixel electrode PE1 of the display substrate 100. Then, the connection electrode 125 and the first pixel electrode PE1 are melt-bonded at a predetermined temperature, thereby bonding the display substrate 100 and the transfer film ES. At this time, the plurality of light emitting elements LE are bonded to the upper surface of the first pixel electrode PE1. In particular, in the connection electrode 125 and the first pixel electrode PE1, the layers that are in contact with each other can be formed using the same material (e.g., ITO), so that the bonding characteristics can be excellent.

[0221] Then, if Fig.32 As shown, after ultraviolet rays or heat are applied to the transfer film ES to reduce the adhesive force of the adhesive layer of the transfer film ES, the transfer film ES may be physically or naturally separated from the plurality of light emitting elements LE.

[0222] Afterwards, if Fig.33 As shown, a planarization layer PLL is formed on a plurality of light emitting elements LE, a first pixel electrode PE1, and a first organic layer FOL, and a common electrode CE is formed on the planarization layer PLL. The planarization layer PLL is formed to have a thickness smaller than the height of the light emitting element LE, so that the second semiconductor layer SEM2 and the third semiconductor layer SEM3 of the light emitting element LE are exposed. Furthermore, a transparent conductive material is deposited on the planarization layer PLL to form a common electrode CE. The common electrode CE is formed to cover the plurality of light emitting elements LE and the planarization layer PLL. The common electrode CE contacts the second semiconductor layer SEM2 and the third semiconductor layer SEM3 of the light emitting element LE exposed above the planarization layer PLL.

[0223] Fig.34 is a plan view of a display panel according to an embodiment of the utility model, Fig.35 is a plan view of a display panel according to another embodiment of the utility model.

[0224] like Fig.34 As shown, a plurality of light emitting elements LE may be arranged in a display area DPA of a display panel. The plurality of light emitting elements LE include a first light emitting element LE-a and a second light emitting element LE-b. The second light emitting element LE-b is different from the first light emitting element LE-a in that the second light emitting element LE-b has an alignment key IDK. In addition, the first light emitting element LE-a and the second light emitting element LE-b are the same. Although not shown, the first light emitting element LE-a is formed with a second semiconductor layer, an active layer, a first semiconductor layer, and a connecting electrode stacked in sequence, and the second light emitting element LE-b is formed with a second semiconductor layer, an active layer, a first semiconductor layer, a connecting electrode, and an alignment key IDK stacked in sequence.

[0225] As reference Figure 7 and Fig.18 As described above, the alignment key IDK has conductivity and has a reflectivity higher than that of the connection electrode.

[0226] On the display panel, the number of the second light emitting elements LE-b may be smaller than the number of the first light emitting elements LE-a. At least two surfaces of the second light emitting elements LE-b may be surrounded by the first light emitting elements LE-a.

[0227] And, if Fig.35 As shown in , the width of the second light emitting element LE-b' can be greater than the width of the first light emitting element LE-a. In addition to the width of the second light emitting element LE-b, Fig.35 and Fig.34 The same, so detailed description is omitted.

[0228] By using the manufacturing apparatus and method of the display panel according to an embodiment, desired intervals between light emitting elements can be precisely and accurately arranged.

[0229] The embodiments of the present invention are described above with reference to the accompanying drawings, but the present invention is not limited to the above embodiments and can be manufactured in various forms different from each other. Personnel with ordinary knowledge in the technical field to which the present invention belongs can understand that the present invention can be implemented in other specific forms without changing the technical ideas or essential features of the present invention. Therefore, it should be understood that the above embodiments are exemplary in all aspects and not restrictive.

Claims

1. A display panel manufacturing device, characterized in that: include: A fixed frame, fixing the periphery of the transfer film on which the plurality of light-emitting elements are arranged; an optical inspection member including a light source for irradiating light toward the transfer film and a light receiving sensor arranged in a light path of the light source; as well as a stretching processing component that stretches the transfer film on which the plurality of light emitting elements are arranged toward the outer periphery of the transfer film and controls the degree of stretching based on the detection result of the optical inspection component, The plurality of light emitting elements include a first light emitting element and a second light emitting element. The second light emitting element includes an alignment key formed on one side.

2. The manufacturing device of the display panel according to claim 1, characterized in that: The stretching processing component comprises: a plate-shaped frame on which the transfer film is arranged; and A transfer driving member supports the rear surface of the plate-shaped frame and transfers the plate-shaped frame in a front surface direction or a rear surface direction of the plate-shaped frame.

3. The manufacturing device of the display panel according to claim 2, characterized in that: The plate-shaped frame includes: one or more through holes, formed from one surface to another surface, wherein the optical inspection component forms a light path on the same axis as the through hole, The light source and the light receiving sensor are arranged with the through hole interposed therebetween.

4. The manufacturing device of the display panel according to claim 3, characterized in that: The stretching processing unit stretches the transfer film until the second light emitting element disposed on the transfer film is located on the same axis as the through hole based on the detection result of the optical inspection unit.

5. The manufacturing device of the display panel according to claim 2, characterized in that: Also includes: The film mounting member presses the fixing frame to fix the position of the fixing frame during the stretching by the stretching treatment member.

6. The manufacturing device of a display panel according to claim 1, wherein: The second light emitting element is sequentially arranged with a second semiconductor layer, an active layer, a first semiconductor layer, a connecting electrode and the alignment key, The alignment key has conductivity and a reflectivity higher than that of the connection electrode.

7. The manufacturing device of a display panel according to claim 1, wherein: The width of the second light emitting element is equal to or greater than the width of the first light emitting element, The second light emitting element is surrounded by the first light emitting element, The number of the second light emitting elements is smaller than the number of the first light emitting elements.

8. A display panel, characterized in that: include: A supporting substrate including a pixel circuit and a pixel electrode; as well as A plurality of light emitting elements are arranged on the pixel electrode. The plurality of light emitting elements include a first light emitting element and a second light emitting element. The second light emitting element includes an alignment key formed on one side.

9. The display panel according to claim 8, wherein: The second light emitting element includes a second semiconductor layer, an active layer, a first semiconductor layer, a connecting electrode and the alignment key in sequence. The alignment key has conductivity and a reflectivity higher than that of the connection electrode.

10. The display panel according to claim 8, wherein: The width of the second light emitting element is equal to or greater than the width of the first light emitting element, The second light emitting element is surrounded by the first light emitting element, The number of the second light emitting elements is smaller than the number of the first light emitting elements.

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