Power divider of radio frequency power supply of semiconductor equipment

Abstract

The utility model provides a power divider for a radio frequency power supply of semiconductor equipment, which is externally connected with the output end of the radio frequency power supply of the semiconductor equipment and divides the output of the radio frequency power supply into a plurality of paths, and each path corresponds to a different number of output lines. And the tail end of each output line is connected to a radio frequency electrode in the process chamber.

Description

Technical Field

[0001] The utility model relates to a power distributor of a radio frequency power supply of a semiconductor device. Background Art

[0002] RF power is widely used in semiconductor thin film deposition equipment. During the thin film deposition process, the frequency and power of RF power can accurately control the ion energy and density to adjust the quality and performance of the film.

[0003] Specifically, the RF power supply activates the atoms or molecules in the deposition gas by providing high-frequency electrical energy, so that they are deposited on the substrate surface to form a thin film. The RF power supply can provide a stable high-frequency electric field, so that the atoms or molecules in the deposition gas can obtain sufficient energy, so that they can be fully activated, which is conducive to the uniform deposition of the thin film and excellent crystallization performance.

[0004] In addition, RF power is also widely used in semiconductor surface cleaning processes. During the semiconductor manufacturing process, various impurities and harmful substances are often attached to the semiconductor surface, which needs to be cleaned to improve device performance. RF power supplies provide high-frequency electrical energy to excite ions in the cleaning solution, thereby achieving cleaning of the semiconductor surface. Therefore, RF power plays an important role in semiconductor thin film deposition equipment and plays a key role in controlling the quality and performance of the film.

[0005] However, the RF power output of the thin film deposition equipment in the prior art is single and cannot adapt to the diverse thin film deposition process requirements, such as partition control, etc. The art urgently needs a power divider for the RF power supply of semiconductor equipment, which can be used for output switching of multiple RF electrodes, and can realize time-sharing and partition control of the RF power in the chamber in real time. At the same time, it has a compact structure and is easy to arrange to facilitate the stability of the RF power supply. Utility Model Content

[0006] In order to overcome the above-mentioned defects, the utility model provides a power divider for a semiconductor device radio frequency power supply, which is externally connected to the output end of the semiconductor device radio frequency power supply. The power divider distributes the output of the radio frequency power supply into multiple paths, each path corresponding to a different number of output lines, and the end of each of the output lines is connected to a radio frequency electrode in a process chamber.

[0007] In one embodiment, preferably, in the power distributor of the radio frequency power supply for semiconductor equipment provided by the utility model, different output lines are connected to radio frequency electrodes at different positions in the process chamber.

[0008] In one embodiment, preferably, in the power distributor of the radio frequency power supply for semiconductor equipment provided by the utility model, the radio frequency power values ​​output by different output lines are configured to be independently controlled.

[0009] In one embodiment, preferably, in the power divider of the RF power supply for semiconductor equipment provided by the utility model, each output line is also provided with an adjustable capacitor, and the power divider controls the output of the RF power value of each output line through the adjustable capacitor.

[0010] In one embodiment, preferably, in the power divider of the radio frequency power supply for semiconductor equipment provided by the utility model, the capacitance value range of the adjustable capacitor is 100pf-5000pf.

[0011] In one embodiment, preferably, in the power divider of the RF power supply for semiconductor equipment provided by the utility model, the power divider distributes the output of the RF power supply into multiple paths, which may include: each of the multiple paths is provided with a relay at the front end position, and the power divider controls the RF power to be output from one of the multiple paths through the relay.

[0012] In one embodiment, preferably, in the power distributor of the RF power supply for semiconductor equipment provided by the utility model, the RF electrodes connected to only one path corresponding to the output line are distributed around the process chamber and the center line of the heating plate.

[0013] In one embodiment, preferably, in the power distributor of the RF power supply for semiconductor equipment provided by the utility model, the RF electrodes connected to the corresponding two output lines are respectively distributed on two semicircles on both sides of the center line of the heating plate in the process chamber.

[0014] The power distributor of the semiconductor equipment radio frequency power supply provided by the utility model can be used for output switching of multiple radio frequency electrodes, and realizes time-sharing and zone-sharing control of radio frequency electricity in the chamber in real time. At the same time, it has a compact structure and is easy to arrange to facilitate the stability of the radio frequency power supply. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The above features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or features may have the same or similar reference numerals.

[0016] Figure 1 It is a schematic diagram of the device principle of a radio frequency power distributor for semiconductor equipment according to an embodiment of the utility model;

[0017] Figure 2 It is a schematic diagram of an output circuit connected to an electrode in a heating plate according to an embodiment of the present utility model;

[0018] Figure 3 is a schematic diagram of a device structure for zoning radio frequency electrodes on a heating plate according to an embodiment of the present invention; and

[0019] Figure 4 The figure is a schematic diagram of the appearance of a power divider according to an embodiment of the present utility model.

[0020] For the sake of clarity, a brief description of the reference numerals is given below:

[0021] 101 RF power output terminal

[0022] 102 Matcher

[0023] 103 Power divider

[0024] 104 First output line

[0025] 1041, 1051 relay

[0026] 1042, 1052a, 1052b adjustable capacitor

[0027] 105a Second output line

[0028] 105b Third output line

[0029] 106 Heating Plate

[0030] 401 RF Power Supply

[0031] 402 Power Divider

[0032] 403 Heating Plate DETAILED DESCRIPTION

[0033] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and functions of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this utility model are limited to this implementation. On the contrary, the purpose of introducing the utility model in conjunction with the implementation is to cover other options or modifications that may be extended based on the claims of the present utility model. In order to provide an in-depth understanding of the present utility model, the following description will include many specific details. The present utility model can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present utility model, some specific details will be omitted in the description.

[0034] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0035] In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal" and "vertical" used in the following description should be understood as the directions shown in the paragraph and the related drawings. Such relative terms are only used for the convenience of description and do not mean that the device described therein must be manufactured or operated in a specific direction, and therefore should not be understood as limiting the present invention.

[0036] It is understood that although the terms "first", "second", "third", etc. may be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below may be referred to as the second component, region, layer and / or part without departing from some embodiments of the present invention.

[0037] In order to overcome the above-mentioned defects existing in the prior art, the utility model provides a power divider for the RF power supply of semiconductor equipment, which can be used for output switching of multiple RF electrodes, and realize time-sharing and partition control of the RF power in the chamber in real time. At the same time, it has a compact structure and is easy to arrange to facilitate the stability of the RF power supply.

[0038] The power distributor provided by the utility model is externally connected to the output end of the radio frequency power supply of the semiconductor device. The power distributor distributes the output of the radio frequency power supply into multiple paths, each path corresponds to a different number of output lines, and the end of each output line is connected to the radio frequency electrode in the process chamber.

[0039] Figure 1 The invention is a schematic diagram of the device principle of a radio frequency power distributor for semiconductor equipment according to an embodiment of the invention.

[0040] like Figure 1 As shown, in this embodiment, the power divider 103 can be connected to the rear end of the matcher 102, and the front end of the matcher 102 is the RF power output 101. The power divider 103 divides the RF power output into two paths internally, one of which corresponds to the first output line 104, and the other corresponds to the second output line 105a and the third output line 105b.

[0041] Further preferably, the power divider distributes the output of the RF power supply into multiple paths, which may include: each of the multiple paths is provided with a relay at the front end position, and the power divider controls the RF power to be output from one of the multiple paths through the relay.

[0042] exist Figure 1 In the illustrated embodiment, a relay 1041 is provided at the front end of the first output line 104, and relays 1051 are provided at the front ends of the second output line 105a and the third output line 105b, and the switching of different output lines is achieved by controlling these relays.

[0043] When the relay 1041 is closed and the relay 1051 is opened, the radio frequency electricity is outputted to the radio frequency electrode in the reaction chamber connected thereto only through the first output line 104. When the relay 1051 is closed and the relay 1041 is opened, the radio frequency electricity is outputted to the radio frequency electrode in the reaction chamber connected thereto respectively through the second output line 105a and the third output line 105b at the same time or separately to realize the zoned and timed control of the radio frequency electricity in the chamber.

[0044] In a preferred embodiment, different output lines are connected to RF electrodes at different positions in the process chamber.

[0045] Figure 2 It is a schematic diagram of an output circuit connected to an electrode in a heating plate according to an embodiment of the present utility model; Figure 3 It is a schematic diagram of the device structure of radio frequency electrode partitioning on a heating plate according to an embodiment of the utility model.

[0046] Can be combined with reference Figure 2 , Figure 3 In this embodiment, the RF electrodes connected to only one of the output lines are distributed around the process chamber and the center line of the heating plate. Figure 2 , 3 As shown, that is, the RF electrodes connected to the first output line 104 are distributed around the heating disk 106 and at the midline position, that is, Figure 2 , 3 The black area in .

[0047] At the same time, in this embodiment, the RF electrodes connected to the corresponding two output lines are respectively distributed on two semicircles on both sides of the center line of the heating plate in the process chamber. Figure 2 , 3 As shown, the second output line 105a is connected to the red semicircle RF electrode on the heating plate 106, and the third output line 105b is connected to the blue semicircle RF electrode.

[0048] It should be noted that this article only provides an exemplary description of the number of power distributor output lines, the corresponding heating plate partitions and the distribution positions of the RF electrodes, and is intended to provide a preferred embodiment to clearly illustrate the preferred implementation of the utility model, rather than to limit the scope of protection of the utility model.

[0049] In fact, for example, the power distributor can also be set up with one line corresponding to three outputs, which are respectively connected to three different positions of the heating plate, or a concentric circle partitioning method, etc., which can be changed according to the actual process requirements. Different specific settings can be applied to the power distributor provided by the utility model, and should also be included in the protection scope of the utility model.

[0050] Furthermore, more preferably, in one embodiment, the RF power values ​​output by different output circuits are configured to be independently controlled.

[0051] In a preferred embodiment, each of the output lines is further provided with an adjustable capacitor, and the power divider controls the output of the radio frequency power value of each of the output lines through the adjustable capacitor.

[0052] You can continue to refer to Figure 1 The first output line 104 is provided with an adjustable capacitor 1042, and the second output line 105a and the third output line 105b are provided with an adjustable capacitor 1052a and an adjustable capacitor 1052b respectively.

[0053] In a preferred embodiment, the capacitance values ​​of the adjustable capacitors range from 100pf to 5000pf, thereby meeting the output requirements of different RF powers.

[0054] Figure 4 The figure is a schematic diagram of the appearance of a power divider according to an embodiment of the present utility model.

[0055] like Figure 4 As shown, each circuit component of the power distributor provided by the utility model can be integrated in a box-shaped shell, such as Figure 4 The power distributor 402 in the embodiment has a circuit structure connected to the RF power supply 401 and the heating plate 403. The power distributor 402 may also be integrated in the box. Figure 1 The matching device shown in FIG. The integrated structure can reduce the occupied volume of multiple components, which is beneficial to the layout of the machine and the stability of the RF power supply output.

[0056] The foregoing description is provided to enable any person skilled in the art to practice the various aspects described herein. However, it should be understood that the scope of protection of the present utility model shall be subject to the appended claims and shall not be limited to the specific structures and components of the above-described embodiments. Those skilled in the art may make various changes and modifications to the embodiments within the spirit and scope of the present utility model, and these changes and modifications also fall within the scope of protection of the present utility model.

Claims

1. A power divider for a radio frequency power supply of a semiconductor device, characterized in that: The power distributor is externally connected to the output end of the RF power supply of the semiconductor device. The power distributor distributes the output of the RF power supply into multiple paths, each path corresponds to a different number of output lines, and the end of each output line is connected to the RF electrode in the process chamber.

2. The power divider according to claim 1, characterized in that Different output lines are connected to radio frequency electrodes at different positions in the process chamber.

3. The power divider according to claim 2, characterized in that: The radio frequency power values ​​output by different output circuits are configured to be independently controlled.

4. The power divider according to claim 3, characterized in that: Each of the output lines is also provided with an adjustable capacitor, and the power distributor controls the output of the radio frequency power value of each of the output lines through the adjustable capacitor.

5. The power divider according to claim 4, characterized in that: The capacitance value range of the adjustable capacitor is 100pf-5000pf.

6. The power divider according to claim 1, characterized in that: The power distributor distributes the output of the radio frequency power supply into multiple paths, including: Each of the multiple paths is provided with a relay at the front end, and the power distributor controls the radio frequency power to be output from one of the multiple paths through the relay.

7. The power divider according to claim 2, characterized in that: The radio frequency electrodes connected to only one of the output lines are distributed around the process chamber and the center line of the heating plate.

8. The power divider according to claim 7, characterized in that: The radio frequency electrodes connected to the corresponding two output lines are respectively distributed on two semicircles on both sides of the center line of the heating plate in the process chamber.

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