Semiconductor device

Abstract

The utility model provides a semiconductor device. The semiconductor device comprises a substrate, a first electrical element, a second electrical element, a lead, a plastic package body and a plurality of terminals, wherein the first electrical element and the second electrical element are located on the same side of the substrate. The first electrical element includes a plurality of first electrodes, and the second electrical element includes a plurality of second electrodes. One end of at least one lead is connected with one first electrode, and the other end of the lead is connected with one second electrode. The plastic package body packages the first electrical element, the second electrical element, the lead and the substrate. The terminal is electrically connected with the first electrode or the second electrode, and the terminal is exposed from the side surface of the plastic package body.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a semiconductor device. Background Art

[0002] Some semiconductor devices include two semiconductor elements, for example, a power operational amplifier includes an operational amplifier chip and a MOS tube. When connecting the semiconductor product to a circuit board, the operational amplifier and the MOS tube need to be welded to the circuit board respectively, and the electrodes of the operational amplifier and the electrodes of the MOS tube are electrically connected through the wiring of the circuit board. The welding process of connecting the above semiconductor device to the circuit board is complicated and takes a long time. Utility Model Content

[0003] The present application provides a semiconductor device. The semiconductor device includes:

[0004] substrate;

[0005] A first electrical element and a second electrical element located on the same side of the substrate; the first electrical element comprises a plurality of first electrodes, and the second electrical element comprises a plurality of second electrodes;

[0006] Lead wires; one end of at least one of the lead wires is connected to one of the first electrodes, and the other end is connected to one of the second electrodes;

[0007] A plastic package encapsulating the first electrical component, the second electrical component, the lead wire and the substrate;

[0008] A plurality of terminals; the terminals are electrically connected to the first electrode or the second electrode, and the terminals are exposed from the side of the plastic package.

[0009] In one embodiment, the multiple first electrodes are located on the surface of the first electrical component away from the substrate, and at least one second electrode is located on the surface of the second electrical component facing the substrate, and the material of the substrate is a conductive material; the first electrical component is bonded to the substrate by an insulating adhesive, and the second electrical component is bonded to the substrate by a conductive adhesive; a blocking structure for blocking the flow of the conductive adhesive is provided on the surface of the substrate facing the first electrical component, and the first electrical component and the second electrical component are located on opposite sides of the blocking structure.

[0010] In one embodiment, the blocking structure is a groove.

[0011] In one embodiment, at least one of the terminals is an integral structure with the substrate.

[0012] In one embodiment, the multiple first electrodes are located on the surface of the first electrical component away from the substrate; the semiconductor device also includes a conductive material layer located between the substrate and the first electrical component, at least one of the first electrodes is connected to the conductive material layer through the lead, and the conductive material layer is made of the same material as the lead.

[0013] In one embodiment, the conductive material layer and the lead wire are both made of silver.

[0014] In one embodiment, the second electrode among the multiple second electrodes located on the surface of the second electrical element away from the substrate includes a first sub-electrode and a second sub-electrode, the first sub-electrode is located on the side of the second sub-electrode close to the first electrical element; the first sub-electrode is connected to the first electrode through the lead, and the second sub-electrode is electrically connected to the terminal.

[0015] In one embodiment, the semiconductor device further comprises a conductive portion located on a side of the second electrical element away from the substrate; the conductive portion is electrically connected to at least one of the second electrodes; the conductive portion and at least one of the terminals are an integral structure; and the plastic package encapsulates the conductive portion.

[0016] In one embodiment, the exposed ends of the plurality of terminals are distributed on opposite sides of the plastic package body; and / or,

[0017] The material of the substrate is metal, and the surface of the substrate away from the first electrical component exposes the plastic package body.

[0018] In one embodiment, the first electrical element includes a power operational amplifier chip, the second electrical element includes a MOS tube, the multiple second electrodes include a gate, a source and a drain; the multiple terminals include a source terminal, a drain terminal, a power terminal and a feedback terminal; the gate is connected to the first electrode through the lead; the source is electrically connected to the source terminal, the drain is electrically connected to the drain terminal, and the power terminal and the feedback terminal are electrically connected to the first electrode respectively.

[0019] In the semiconductor device provided by the embodiment of the present application, the first electrical component and the second electrical component are encapsulated in the same plastic package, so the first electrical component and the second electrical component can be welded to the circuit board as a whole at the same time, which helps to reduce the process complexity of welding the semiconductor device to the circuit board; the first electrode of the first electrical component and the second electrode of the second electrical component are connected by a lead, so when the semiconductor device is connected to the circuit board, there is no need to use the routing of the circuit board to connect the first electrode of the first electrical component and the second electrode of the second electrical component, which can further simplify the process complexity of connecting the semiconductor device to the circuit board, and can make the length of the lead connecting the first electrode of the first electrical component and the second electrode of the second electrical component shorter, which helps to reduce the loss in the signal transmission process and improve the performance of the semiconductor device; because the plastic package encapsulates the lead, the plastic package can protect the lead to avoid breakage or damage of the lead, which helps to improve the life of the semiconductor device; when the size of the first electrical component is different or the size of the second electrical component is different, the same size of the plastic package and pins can be used to unify the size of the semiconductor device, so the space reserved for the semiconductor device by the circuit board can be unified, which helps to avoid waste of the space reserved for the semiconductor device by the circuit board. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 is a schematic diagram of a partial structure of a semiconductor device provided by an exemplary embodiment of the present application;

[0021] Figure 2 is a schematic diagram of a three-dimensional structure of a semiconductor device provided by an exemplary embodiment of the present application at one angle;

[0022] Figure 3 It is a schematic diagram of the three-dimensional structure of a semiconductor device provided by an exemplary embodiment of the present application from another angle. Specific embodiments

[0023] Exemplary embodiments will be described in detail herein, examples of which are shown in the accompanying drawings. When the following description refers to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present application. Instead, they are merely examples of devices and methods consistent with some aspects of the present application as detailed in the appended claims.

[0024] The terms used in this application are for the purpose of describing specific embodiments only and are not intended to limit this application. The singular forms of "a", "said" and "the" used in this application and the appended claims are also intended to include plural forms unless the context clearly indicates other meanings. It should also be understood that the term "and / or" used herein refers to and includes any or all possible combinations of one or more associated listed items.

[0025] It should be understood that although the terms first, second, third, etc. may be used in the present application to describe various information, these information should not be limited to these terms. These terms are only used to distinguish the same type of information from each other. For example, without departing from the scope of the present application, the first information may also be referred to as the second information, and similarly, the second information may also be referred to as the first information. Depending on the context, the word "if" as used herein may be interpreted as "at the time of" or "when" or "in response to determining".

[0026] Some embodiments of the present application are described in detail below in conjunction with the accompanying drawings. In the absence of conflict, the following embodiments and features in the embodiments can be combined with each other.

[0027] The present application embodiment provides a semiconductor device. Figures 1 to 3 As shown, the semiconductor device includes a substrate 10 , a first electrical component 20 , a second electrical component 30 , a lead 40 , a plastic package 50 and a plurality of terminals 60 .

[0028] The first electrical component 20 and the second electrical component 30 are located on the same side of the substrate 10, the first electrical component 20 includes a plurality of first electrodes 21, and the second electrical component 30 includes a plurality of second electrodes 31. One end of at least one of the leads 40 is connected to one of the first electrodes 21, and the other end is connected to one of the second electrodes 31. The plastic package 50 encapsulates the first electrical component 20, the second electrical component 30, the lead 40 and the substrate 10. The terminal 60 is electrically connected to the first electrode 21 or the second electrode 31, and the terminal 60 is exposed from the side of the plastic package 50.

[0029] In the semiconductor device provided by the embodiment of the present application, the first electrical component and the second electrical component are encapsulated in the same plastic package, so the first electrical component and the second electrical component can be welded to the circuit board as a whole at the same time, which helps to reduce the process complexity of welding the semiconductor device to the circuit board; the first electrode of the first electrical component and the second electrode of the second electrical component are connected by a lead, so when the semiconductor device is connected to the circuit board, there is no need to use the routing of the circuit board to connect the first electrode of the first electrical component and the second electrode of the second electrical component, which can further simplify the process complexity of connecting the semiconductor device to the circuit board, and can make the length of the lead connecting the first electrode of the first electrical component and the second electrode of the second electrical component shorter, which helps to reduce the loss in the signal transmission process and improve the performance of the semiconductor device; because the plastic package encapsulates the lead, the plastic package can protect the lead to avoid breakage or damage of the lead, which helps to improve the life of the semiconductor device; when the size of the first electrical component is different or the size of the second electrical component is different, the same size of the plastic package and pins can be used to unify the size of the semiconductor device, so the space reserved for the semiconductor device by the circuit board can be unified, which helps to avoid waste of the space reserved for the semiconductor device by the circuit board.

[0030] In one embodiment, the material of the substrate 10 is metal, and the surface of the substrate 10 away from the first electrical component 20 exposes the plastic package 50. Since the material of the substrate 10 is metal, the heat dissipation performance of the substrate 10 is good; the surface of the substrate 10 away from the first electrical component 20 exposes the plastic package 50, and the substrate 10 can conduct the heat generated by the first electrical component 10 and the second electrical component 20 to the outside, so as to prevent the temperature of the semiconductor device from being too high and affecting the performance of the semiconductor device. In some embodiments, the material of the substrate 10 is copper.

[0031] In one embodiment, the material of the plastic package body 50 may be a polymer resin, a resin composite material, a polymer composite material, etc. For example, the material of the plastic package body 50 may be a resin with a filler, wherein the filler may be an inorganic particle.

[0032] In one embodiment, Figures 1 to 3 As shown, the exposed ends of the multiple terminals 60 are distributed on opposite sides of the plastic package 50. With such a configuration, the interference between the circuits connected to the terminals located on different sides of the plastic package 50 is small, which can simplify the circuit complexity of the circuit board, so that the circuit board can leave more space for setting pins connected to other devices to achieve more functions and meet the needs of more application occasions; since the multiple terminals 60 are distributed on opposite sides of the plastic package 50, when the terminals 60 of the semiconductor device are welded to the circuit board, the opposite sides of the semiconductor device can be subjected to a relatively uniform force, which can prevent the semiconductor device from warping or deformation.

[0033] In one embodiment, Figure 1 As shown, the plurality of first electrodes 21 are located on the side of the first electrical component 20 away from the substrate 10, and at least one second electrode 31 is located on the surface of the second electrical component 30 facing the substrate 10. The material of the substrate 10 is a conductive material; the first electrical component 20 is bonded to the substrate 10 by an insulating adhesive, and the second electrical component 30 is bonded to the substrate 10 by a conductive adhesive. In this way, the second electrode located on the surface of the second electrical component 30 facing the substrate 10 is electrically connected to the substrate 10 by a conductive adhesive; when the first electrical component 20 is bonded to the substrate 10 by an insulating adhesive, when the circuit of the first electrical component 20 is exposed on the surface of the first electrical component 20 facing the substrate 10, the insulating adhesive can prevent the circuit of the first electrical component 20 from being electrically connected to the substrate 10, thereby causing a short circuit between the circuit of the first electrical component 20 and the second electrode located on the surface of the second electrical component 30 facing the substrate 10; since the second electrical component 30 is bonded to the substrate 10 by a conductive adhesive, it is beneficial for the heat generated by the second electrical component 30 to be transferred to the outside through the substrate 10. In some embodiments, the conductive adhesive can be solder paste or silver paste.

[0034] In one embodiment, Figure 1 As shown, a blocking structure 11 for blocking the flow of the conductive adhesive is provided on the surface of the substrate 10 facing the first electrical component 20, and the first electrical component 20 and the second electrical component 30 are located on opposite sides of the blocking structure 11. In the process of mounting the second electrical component 30 on the substrate 10, the conductive adhesive is firstly coated on the substrate 10, and then the second electrical component 30 is placed on the conductive adhesive. The conductive adhesive will flow before curing, and the blocking structure 11 can block the conductive adhesive from flowing toward the first electrical component 20, causing the exposed circuit of the first electrical component 20 to be electrically connected to the substrate 10 through the conductive adhesive, thereby causing a short circuit between the circuit of the first electrical component 20 and the second electrode located on the surface of the second electrical component 30 facing the substrate 10.

[0035] Furthermore, the blocking structure 11 is a groove. With such a configuration, the conductive adhesive flowing toward the first electrical component 10 enters the groove, which can effectively prevent the conductive adhesive from flowing toward the first electrical component 20, thereby effectively preventing the conductive adhesive from contacting the first electrical component 20. In some embodiments, the blocking structure 11 may include two or more grooves arranged in parallel. In other embodiments, the blocking structure 11 may be a protruding structure.

[0036] In some embodiments, the blocking structure is in a strip shape, and in the extending direction of the blocking structure 11 , the length of the blocking structure 11 is greater than the length of the second electrical element 30 , which is more helpful to prevent the conductive adhesive from flowing toward the first electrical element 20 .

[0037] In one embodiment, Figure 1 and Figure 2 As shown, at least one of the terminals 60 is an integral structure with the substrate 10. In this arrangement, the terminal 60 is electrically connected to the second electrode located on the surface of the second electrical element 30 facing the substrate 10 through the substrate 10. Compared with the solution in which the terminal 60 is separately arranged from the substrate 10, there is no need to use a lead to connect the terminal 60 to the substrate 10, which helps to simplify the structure of the semiconductor device and reduce the complexity of the manufacturing process of the semiconductor device.

[0038] In one embodiment, Figure 1 As shown, the semiconductor device further includes a conductive material layer 70 located between the substrate 10 and the first electrical component 20, at least one of the first electrodes 21 is connected to the conductive material layer 70 through the lead 40, and the conductive material layer 70 is made of the same material as the lead 40. By providing a conductive material layer made of the same material as the lead 40 on the surface of the substrate 10 facing the first electrical component 20, the reliability of welding between the lead 40 and the conductive material layer can be improved.

[0039] Furthermore, the conductive material layer 70 and the lead 40 are both made of silver. This arrangement can ensure that the conductive material layer 70 and the lead 40 have good conductivity, and compared with the solution in which the lead 40 is made of metal gold, the manufacturing cost of the semiconductor device can be reduced.

[0040] In one embodiment, the conductive material layer 70 is made of silver, and the conductive material layer 70 covers the surface of the substrate 10 facing the first electrical element 20. In this way, the conductive material layer 70 is not easily oxidized, which can prevent the substrate 10 from being oxidized and causing the second electrode located on the surface of the second electrical element 30 facing the substrate 10 to have a poor electrical connection with the substrate 10.

[0041] In one embodiment, Figure 1As shown, at least two second electrodes 31 are located on the surface of the second electrical element 30 away from the substrate 10, and the at least two second electrodes 31 include a first sub-electrode 311 and a second sub-electrode 312, wherein the first sub-electrode 311 is located on the side of the second sub-electrode 312 close to the first electrical element 20; the first sub-electrode 311 is connected to the first electrode 21 through the lead 40, and the second sub-electrode 312 is electrically connected to the terminal 60. In this way, the length of the lead 40 used to connect the first sub-electrode 311 and the first electrode 21 can be reduced, which helps to reduce the loss in the signal transmission process; since the second sub-electrode 312 is located on the side of the first sub-electrode 311 away from the first electrical element 20, in the process of forming the plastic package, even if the lead 40 connecting the first sub-electrode 311 and the first electrode 21 collapses under the impact of the plastic package, the collapsed part of the lead 40 will not contact the second sub-electrode 312, which can avoid the short circuit between the first sub-electrode 311 and the second sub-electrode 312, thereby improving the yield of the semiconductor device. In some embodiments, the number of the first sub-electrodes 311 may be two or more, and the number of the second sub-electrodes 312 may be one, or two or more.

[0042] In one embodiment, Figure 1 As shown, the semiconductor device further includes an insulator 33 encapsulating the second electrical component 30 , the second electrode 31 is exposed from the insulator 33 , and the plastic package 50 encapsulates the insulator 33 . The insulator 33 can protect the second electrical component 30 .

[0043] In one embodiment, Figure 1 As shown, the semiconductor device further includes a conductive portion 80 located on the side of the second electrical element 30 away from the substrate 10, the conductive portion 80 is electrically connected to at least one of the second electrodes 31; the conductive portion 80 and at least one of the terminals 60 are an integral structure; and the plastic package 50 encapsulates the conductive portion 80. In this configuration, the terminal 60 is electrically connected to the second electrode 31 through the conductive portion 80, and there is no need to use a lead to connect the terminal 60 to the second electrode 31, which helps to simplify the structure of the semiconductor device and reduce the complexity of the manufacturing process of the semiconductor device.

[0044] In one embodiment, the conductive part 80 is electrically connected to the second electrode 31 through a conductive adhesive material. The conductive adhesive material may be solder paste or silver paste.

[0045] In one embodiment, the first electrical element 20 includes a power operational amplifier chip, the second electrical element 30 includes a MOS tube, and the plurality of second electrodes 31 include a gate, a source, and a drain. Figure 1As shown, the multiple terminals 60 include a source terminal 64, a drain terminal 61, a power terminal 62 and a feedback terminal 63; the gate is connected to the first electrode 21 through the lead 40; the source is electrically connected to the source terminal 64, the drain is electrically connected to the drain terminal 61, and the power terminal 62 and the feedback terminal 63 are respectively electrically connected to the first electrode 21. In this embodiment, the semiconductor device can be a power operational amplifier device. Figure 1 In the illustrated embodiment, the first sub-electrode 311 is a gate, the second sub-electrode 312 is a source, and the drain is located on the surface of the second electrical element 30 facing the substrate.

[0046] In one embodiment, Figures 1 to 3 As shown, the source terminal 64, the power terminal 62 and the feedback terminal 63 are exposed from the same side of the plastic package 50, and the drain terminal 61 is exposed from the other side of the plastic package 50. The width of the drain terminal 61 is greater than the width of the source terminal 64, the width of the power terminal 62 and the width of the feedback terminal 63.

[0047] In one embodiment, the source terminal 64 , the power terminal 62 , and the feedback terminal 63 are all located on the side of the substrate 10 facing the first electrical component 20 , and there is a gap between them and the substrate 10 , and the plastic package 50 fills the gap between the source terminal 64 , the power terminal 62 , and the feedback terminal 63 and the substrate 10 .

[0048] In one embodiment, Figure 1 and Figure 2 As shown, the substrate 10 is provided with a through hole 12, and the plastic package 50 fills the through hole 12. Such a configuration can increase the contact area between the plastic package 50 and the substrate 10, and improve the adhesion between the plastic package 50 and the substrate 10.

[0049] In one embodiment, the semiconductor device further includes a third electrical component, the third electrical component includes a plurality of third electrodes, the third electrodes may be connected to the first electrode or the second electrode via leads, and may also be electrically connected to the terminals, and the plastic package encapsulates the third electrical component.

[0050] It should be noted that in the accompanying drawings, the sizes of layers and regions may be exaggerated for clarity of illustration. It is also understood that when an element or layer is referred to as being "on" another element or layer, it may be directly on the other element, or there may be an intermediate layer. In addition, it is understood that when an element or layer is referred to as being "under" another element or layer, it may be directly under the other element, or there may be more than one intermediate layer or element. In addition, it is also understood that when a layer or element is referred to as being "between" two layers or two elements, it may be the only layer between the two layers or two elements, or there may also be more than one intermediate layer or element. Similar reference numerals throughout the text indicate similar elements.

[0051] Those skilled in the art will readily appreciate other embodiments of the present application after considering the specification and practicing the disclosure disclosed herein. The present application is intended to cover any modification, use or adaptation of the present application, which follows the general principles of the present application and includes common knowledge or customary techniques in the art that are not disclosed in the present application. The specification and examples are intended to be exemplary only, and the true scope and spirit of the present application are indicated by the following claims.

[0052] It should be understood that the present application is not limited to the precise structures that have been described above and shown in the drawings, and that various modifications and changes may be made without departing from the scope thereof. The scope of the present application is limited only by the appended claims.

Claims

1. A semiconductor device, characterized in that: The semiconductor device comprises: substrate; A first electrical element and a second electrical element located on the same side of the substrate; the first electrical element comprises a plurality of first electrodes, and the second electrical element comprises a plurality of second electrodes; Lead wires; one end of at least one of the lead wires is connected to one of the first electrodes, and the other end is connected to one of the second electrodes; A plastic package encapsulating the first electrical component, the second electrical component, the lead wire and the substrate; A plurality of terminals; the terminals are electrically connected to the first electrode or the second electrode, and the terminals are exposed from the side of the plastic package.

2. The semiconductor device according to claim 1, wherein: The plurality of first electrodes are located on a surface of the first electrical element away from the substrate, at least one second electrode is located on a surface of the second electrical element facing the substrate, and the substrate is made of a conductive material; The first electrical component is bonded to the substrate via an insulating adhesive, and the second electrical component is bonded to the substrate via a conductive adhesive; a blocking structure for blocking the flow of the conductive adhesive is provided on the surface of the substrate facing the first electrical component, and the first electrical component and the second electrical component are located on opposite sides of the blocking structure.

3. The semiconductor device according to claim 2, characterized in that The blocking structure is a groove.

4. The semiconductor device according to claim 2, characterized in that At least one of the terminals is integrally formed with the substrate.

5. The semiconductor device according to claim 1, wherein: The multiple first electrodes are located on the surface of the first electrical component away from the substrate; the semiconductor device also includes a conductive material layer located between the substrate and the first electrical component, at least one of the first electrodes is connected to the conductive material layer through the lead, and the conductive material layer is made of the same material as the lead.

6. The semiconductor device according to claim 5, characterized in that The conductive material layer and the lead wire are both made of silver.

7. The semiconductor device according to claim 1, wherein: At least two second electrodes are located on the surface of the second electrical element away from the substrate, and the at least two second electrodes include a first sub-electrode and a second sub-electrode, and the first sub-electrode is located on a side of the second sub-electrode close to the first electrical element; the first sub-electrode is connected to the first electrode through the lead, and the second sub-electrode is electrically connected to the terminal.

8. The semiconductor device according to claim 1, wherein: The semiconductor device also includes a conductive portion located on a side of the second electrical element away from the substrate; the conductive portion is electrically connected to at least one of the second electrodes; the conductive portion and at least one of the terminals are an integral structure; and the plastic package encapsulates the conductive portion.

9. The semiconductor device according to claim 1, wherein: The exposed ends of the plurality of terminals are distributed on opposite sides of the plastic package body; and / or, The material of the substrate is metal, and the surface of the substrate away from the first electrical component exposes the plastic package body.

10. The semiconductor device according to claim 1, wherein: The first electrical element includes a power operational amplifier chip, the second electrical element includes a MOS tube, the multiple second electrodes include a gate, a source and a drain; the multiple terminals include a source terminal, a drain terminal, a power terminal and a feedback terminal; the gate is connected to the first electrode through the lead; the source is electrically connected to the source terminal, the drain is electrically connected to the drain terminal, and the power terminal and the feedback terminal are electrically connected to the first electrode respectively.

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