Power supply module

Abstract

The utility model provides a power module. A PFC module, a DC / DC module and a first control unit are arranged in a shell of the power module. The PFC module comprises a PFC inductor and a PFC power semiconductor device group. The DC / DC module comprises a transformer, a primary side circuit and a secondary side rectifying circuit. The first control unit is arranged adjacent to the PFC inductor and is used for receiving a sampling signal of voltage or current from the PFC module so as to control the power supply module. The main heat dissipation channel is located between the PFC inductor and the shell in the first direction, and the main heat dissipation channel extends in the second direction. And the first power semiconductor module is arranged in the main heat dissipation channel, and the first power semiconductor module comprises a PFC power semiconductor device group and all primary power semiconductor devices in the primary circuit. The power supply module provided by the utility model can shorten the sampling path of the current, improve the sampling precision of the first control unit, and reduce the noise of the power supply module during operation.

Description

Technical Field

[0001] The present disclosure relates to the technical field of power modules, and in particular to a power module. Background Art

[0002] As power modules develop towards high power density, the size of power modules is getting smaller and smaller, and the power is getting higher and higher.

[0003] The power supply module generally includes a first control unit and a PFC module, and the first control unit is used to receive a sampling signal of a voltage or current from the PFC module to control the power supply module. At present, the method of improving the power density of the power supply module is generally to increase the frequency of the power supply module to reduce the volume of the magnetic parts in the power supply module. As the frequency of the power supply module increases, the sampling frequency is also getting higher and higher. However, the high-frequency sampling signal is easily interfered, resulting in the first control unit receiving the high-frequency signal failing to achieve the expected control of the power supply module. Therefore, in a high-frequency power supply module, how to ensure that the first control unit obtains a sampling signal with higher accuracy becomes a technical problem to be solved. Utility Model Content

[0004] The present disclosure provides a power supply module, which can shorten the sampling and signal transmission path of a current or voltage signal and improve the accuracy of a sampling signal obtained by a first control unit.

[0005] The present disclosure provides a power supply module, the power supply module comprising:

[0006] The housing includes:

[0007] A PFC module, including a PFC inductor and a PFC power semiconductor device group;

[0008] DC / DC module, including transformer, primary circuit and secondary rectification circuit;

[0009] A first control unit is disposed adjacent to the PFC inductor and is used to receive a sampling signal of a voltage or current from the PFC module to control the power module;

[0010] The main heat dissipation channel is located between the PFC inductor and the housing in the first direction, and the main heat dissipation channel extends along the second direction; wherein

[0011] A first power semiconductor module is provided in the main heat dissipation channel, and the first power semiconductor module includes a PFC power semiconductor device group and all primary power semiconductor devices in the primary circuit;

[0012] The first direction and the second direction are located on the first plane and intersect each other.

[0013] In some optional embodiments,

[0014] The first power semiconductor module and the first control unit are respectively located on two sides of the PFC inductor along the first direction.

[0015] In some optional embodiments, the power module further includes:

[0016] The sampling unit is used to sample the current of the PFC inductor, wherein the sampling unit is located between the PFC inductor and the first control unit so that the sampling signal is directly transmitted to the first control unit.

[0017] In some optional embodiments, a low power consumption module is further provided in the housing, including:

[0018] The capacitor module, a projection of the first control unit on the first plane at least partially overlaps with a projection of the capacitor module on the first plane.

[0019] In some optional embodiments,

[0020] The capacitor module includes at least one electrolytic capacitor.

[0021] In some optional embodiments,

[0022] The transformer is arranged on one side of the PFC inductor along the second direction;

[0023] The housing also includes:

[0024] The first sub-heat dissipation channel and the second sub-heat dissipation channel are respectively located on two sides of the transformer along the first direction. The first sub-heat dissipation channel and the second sub-heat dissipation channel both extend along the second direction and are connected to the main heat dissipation channel.

[0025] In some optional embodiments,

[0026] The primary circuit includes a resonant inductor, and the resonant inductor and the PFC inductor form an inductor module;

[0027] The transformer and the inductor module are provided with a first gap along the second direction, and the second sub-heat dissipation channel is communicated with the main heat dissipation channel through the first gap.

[0028] In some optional embodiments,

[0029] The secondary side rectifying circuit comprises a first rectifying unit, and the first rectifying unit is arranged in the first sub-heat dissipating channel.

[0030] In some optional embodiments,

[0031] The secondary side rectifying circuit further includes a second rectifying unit, and the second rectifying unit is arranged in the second sub-heat dissipating channel.

[0032] In some optional embodiments, the power module further includes:

[0033] The fan is arranged at one side of the main heat dissipation channel along the second direction, and the fan is used to form an airflow along the second direction.

[0034] In some optional embodiments, the power module further includes:

[0035] The filter unit is located between the fan and the PFC inductor along the second direction.

[0036] In some optional embodiments,

[0037] The frequency of the power module is greater than or equal to 30KHz.

[0038] The embodiment of the present disclosure provides a power module, the power module includes a housing, the housing includes a PFC module and a first control unit, because the first control unit is arranged close to the PFC inductor in the PFC module, the first control unit can be close to the PFC inductor, the sampling and signal transmission path of the current or voltage signal in the power module can be shortened, so as to improve the sampling signal accuracy obtained by the first control unit, so as to meet the requirements of the first control unit in the high-frequency power module for the sampling signal accuracy obtained, so that the first control unit can control the power module as expected, which is conducive to the safe, reliable and stable operation of the power module. At the same time, since the higher the frequency, the greater the influence of noise on the sampling accuracy, when the first control unit is arranged close to the PFC inductor, a relatively clean environment can be provided between the PFC inductor and the first control unit, so as to reduce the influence of noise on the sampling signal accuracy when the power module is running. In addition, since the first power semiconductor module is located in the main heat dissipation channel in the housing, the space in the housing can be reasonably utilized to realize the arrangement of the first power semiconductor module in the housing, so that the first control unit can be arranged close to the PFC inductor, and at the same time, the heat dissipation requirements of the first power semiconductor module can be met through the main heat dissipation channel, ensuring the safe, reliable and stable operation of the power module. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0040] Figure 1 is a structural schematic diagram of a power module provided by an embodiment of the present disclosure;

[0041] Figure 2 This is a schematic diagram of a heat dissipation path in a power module provided in an embodiment of the present disclosure;

[0042] Figure 3 is another schematic diagram of a heat dissipation path in a power module provided in an embodiment of the present disclosure;

[0043] Figure 4 It is a circuit diagram of a power module provided in an embodiment of the present disclosure.

[0044] Reference numerals:

[0045] 10-housing; 11-main heat dissipation channel; 111-first end; 112-second end; 12-first sub-heat dissipation channel; 13-second sub-heat dissipation channel; 14-output connector;

[0046] 20-PFC module; 21-PFC inductor;

[0047] 30- Transformer;

[0048] 40-primary circuit; 41-resonant inductor;

[0049] 50-secondary side rectifier circuit; 51-first rectifier unit; 52-second rectifier unit; 53-rectifier device;

[0050] 60- a first control unit;

[0051] 70-sampling unit;

[0052] 80- low power consumption module; 81- capacitor module; 82- other low power consumption devices;

[0053] 90-a first power semiconductor module; 91-a power semiconductor device;

[0054] 100- a first substrate;

[0055] 200-fan; 210-vent;

[0056] 300-first gap;

[0057] 400-input connector;

[0058] 500- second substrate;

[0059] 600-filter unit;

[0060] X direction - second direction; Y direction - first direction. DETAILED DESCRIPTION

[0061] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0062] As a major power supply device in electronic devices such as servers, the power module plays an important role in electronic devices.

[0063] As described in the background technology, the first control unit in the power module can be used to receive a sampling signal of the voltage or current in the PFC module inside the power module, especially a sampling signal of the current of the PFC inductor in the PFC module, so as to control the power module and ensure that the power module can operate safely, reliably and stably. The first control unit is usually a primary control chip. The structure of the first control unit can be determined according to the structure of the existing power module and will not be repeated in this disclosure. As the frequency of the power module increases, the sampling frequency is also getting higher and higher. However, the high-frequency sampling signal is easily interfered, which causes the first control unit that receives the high-frequency signal to control the power module as expected. Therefore, in a high-frequency power module, how to ensure that the first control unit obtains a sampling signal with higher precision becomes a technical problem to be solved.

[0064] It should be noted that the high-frequency power module refers to a power module with a higher operating frequency. For example, the operating frequency of the high-frequency power module may be greater than 30 KHz.

[0065] In view of this, the embodiment of the present disclosure provides a power module, in which the first control unit is arranged close to the PFC inductor to shorten the sampling and signal transmission path of the current or voltage signal in the power module, and reduce the noise on the sampling and signal transmission path, so that the accuracy of the sampling signal obtained by the first control unit can be improved, so as to meet the requirements of the first control unit in the high-frequency power module for the accuracy of the acquired sampling signal, so that the first control unit can control the power module as expected, which is conducive to the safe, reliable and stable operation of the power module. At the same time, since the higher the frequency, the greater the impact of noise on the accuracy of the sampling signal, the first control unit is arranged close to the PFC inductor, which can also ensure that there is a relatively clean environment between the PFC inductor and the first control unit, so as to reduce the impact of noise on the accuracy of the sampling signal when the power module is running.

[0066] The power module of the embodiment of the present disclosure will be further described below in conjunction with the accompanying drawings.

[0067] See also Figures 1 to 4As shown, the power module includes a housing 10 and a circuit module located in the housing 10. The circuit module includes a PFC (power factor correction) module, a DC / DC module and a first control unit 60. The PFC module 20 includes a PFC inductor 21 and a PFC power semiconductor device group. Figure 4 In the figure, the PFC inductor 21 is represented by the symbol L1. The DC / DC module includes a transformer 30, a primary circuit 40 and a secondary rectifier circuit 50. The first control unit 60 is arranged adjacent to the PFC inductor 21 and is used to receive a sampling signal of a voltage or current from the PFC module 20 to control the power module.

[0068] Wherein, being closely arranged means that, in the first direction Y, no other power devices are arranged between the first control unit 60 and the PFC inductor 21, and the current signal of the PFC inductor 21 can be sent to the first control unit 60 through the shortest path after being sampled. If the first control unit 60 is not closely arranged to the PFC inductor 21, that is, other power devices are arranged between the first control unit 60 and the PFC inductor 21, the signal transmission path between the PFC inductor 21 and the first control unit 60 needs to avoid these power devices, for example, go around the outside of the arrangement position of these power devices, which will result in a longer signal transmission path between the first control unit 60 and the PFC inductor 21, so that the sampling signal obtained by the first control unit 60 has a lower accuracy.

[0069] Since the first control unit 60 is disposed adjacent to the PFC inductor 21, the first control unit 60 can be close to the PFC inductor 21, and the current signal of the PFC inductor 21 can be sent to the first control unit 60 through the shortest path after sampling, thereby improving the accuracy of the sampled signal obtained by the first control unit 60. The improvement of the accuracy of the sampled signal obtained by the first control unit 60 is conducive to ensuring the safe, reliable and stable operation of the power module under high-frequency conditions.

[0070] The frequency of the power module may be greater than or equal to 30 KHz. By placing the first control unit 60 close to the PFC inductor 21, the power module can operate safely, reliably and stably when the frequency of the power module is greater than or equal to 30 KHz.

[0071] At the same time, since the first control unit 60 is arranged close to the PFC inductor 21, it is difficult to arrange other power devices between the first control unit 60 and the PFC inductor 21, especially the power semiconductor device 91 in the first power semiconductor module 90. Since the power semiconductor device 91 generates a large noise when working in a high-frequency state, it will cause a large interference to the transmission of the high-frequency sampling signal. When it is difficult to arrange the power semiconductor device 91 between the first control unit 60 and the PFC inductor 21, it can ensure that there is a relatively clean environment between the PFC inductor 21 and the first control unit 60, reducing the interference of noise on the sampling signal accuracy during signal transmission.

[0072] See also Figure 1 and Figure 4 As shown, the first power semiconductor module 90 includes a PFC power semiconductor device group and all primary power semiconductor devices in the primary circuit 40. The PFC power semiconductor device group includes a plurality of PFC power semiconductor devices. Figure 4 In the PFC circuit, the PFC power semiconductor devices are represented by symbols Q1, Q2, S a , S b The primary power semiconductor devices are represented by symbols Q3 and Q4 respectively. The PFC power semiconductor device and the primary power semiconductor device are both power semiconductor devices 91. For example, the PFC power semiconductor device and the primary power semiconductor device can be high-frequency switching tubes, polarity tubes, fast tubes or field effect tubes (Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET) and the like.

[0073] See also Figure 1 As shown, the circuit module further includes a sampling unit 70, which is used to sample the current of the PFC inductor 21. The sampling unit 70 is located between the PFC inductor 21 and the control unit, so that the sampling signal is directly transmitted to the control unit, so that the first control unit 60 receives the sampling signal and controls the power module according to the sampling signal. The sampling unit 70 can be a sampling resistor, a Hall element, or an isolation transformer.

[0074] It should be noted that the sampling unit 70 being located between the PFC inductor 21 and the first control unit 60 can be understood as the sampling unit 70 being located in the signal transmission path between the PFC inductor 21 and the first control unit 60, and is not limited to the first direction Y. The sampling unit 70 is located in the area between the PFC inductor 21 and the first control unit 60. Generally, since the PFC inductor 21 has a certain height in the housing 10, the sampling unit 70 can be located within the projection range of the PFC inductor 21 on the first plane (the plane where the first direction Y and the second direction X are located), and located on the side of the PFC inductor 21 adjacent to the first control unit 60, so that the sampling unit 70 can be electrically connected to the PFC inductor 21 and the first control unit 60 at the same time, and the height of the PFC inductor 21 can be reasonably utilized, so that the sampling unit 70 can be arranged in the housing 10, and the structure of the power module is more compact.

[0075] It should be noted that the first direction Y and the second direction X are both located in the first plane and are perpendicular to each other.

[0076] It should be noted that the electrical connection between the sampling unit 70 and the PFC inductor 21 and the first control unit 60 can be determined according to the circuit structure of the existing power module, which will not be described in detail here.

[0077] In addition, the internal devices can also be divided into high power consumption modules and low power consumption modules 80. Compared with the low power consumption module 80, the high power consumption module has a larger heat generation when the power module is running. Which devices in the internal devices are high power consumption modules or low power consumption modules 80 will be illustrated below by examples and will not be repeated here.

[0078] See also Figure 1 As shown, a low power consumption module 80 is further provided in the housing 10. The low power consumption module 80 includes a capacitor module 81, which is an output capacitor of the PFC module 20. The projection of the first control unit 60 on the first plane overlaps at least partially with the projection of the capacitor module 81 on the first plane, so as to reasonably utilize the height of the capacitor module 81, realize the arrangement of the first control unit 60 in the housing 10, and make the structure of the power module more compact.

[0079] For example, since the capacitor module 81 has a certain height, the first control unit 60 can be located at the bottom of the capacitor module 81 and within the projection range of the capacitor module 81 on the first plane, so that the projection of the first control unit 60 on the first plane is entirely within the projection of the capacitor module 81 on the first plane, so as to further improve the compactness of the structure of the power module.

[0080] For another example, when the first control unit 60 is located at the bottom of the capacitor module 81, part of the first control unit 60 may also be located outside the projection range of the capacitor module 81 on the first plane, so that the projection of the first control unit 60 on the first plane partially overlaps with the projection of the capacitor module 81 on the first plane.

[0081] The capacitor module 81 includes at least one electrolytic capacitor. Since the electrolytic capacitor has a certain height, the height of the electrolytic capacitor can be utilized to realize the arrangement of the first control unit 60 in the housing 10. When there are two electrolytic capacitors, the first control unit 60 can be arranged within the projection of the electrolytic capacitor adjacent to the PFC inductor 21 on the first plane, so that the first control unit 60 is arranged close to the PFC inductor 21.

[0082] Although the accuracy of the sampling signal received by the first control unit 60 is improved by placing the first control unit 60 close to the PFC inductor 21, the heat dissipation of the internal components is also a great challenge as the power module is moving towards high power density. How to place these internal components and form an effective heat dissipation channel in the housing 10 has become particularly critical. The heat dissipation of the internal components will also affect the safe, reliable and stable operation of the power module.

[0083] For this purpose, see Figure 1 and Figure 2 As shown, the housing 10 has a main heat dissipation channel 11 therein. The main heat dissipation channel 11 is located between the PFC inductor 21 and the housing 10 in the first direction Y, and the main heat dissipation channel 11 extends along the second direction X. The main heat dissipation channel 11 may be located on a side of the edge of the PFC inductor 21 facing the housing 10 along the first direction Y. The first power semiconductor module 90 is disposed in the main heat dissipation channel 11.

[0084] When the power module is running, the high power module has a high heat generation, so the high power module has a high heat dissipation requirement. When the heat dissipation performance of the high power module is poor, it will seriously affect the safe, reliable and stable operation of the power module.

[0085] For example, the first power semiconductor module 90 is a high power consumption module, and when the power module is running, the first power semiconductor module 90 has a large amount of heat. Therefore, the first power semiconductor module 90 is centrally arranged in the main heat dissipation channel 11, which can not only reasonably utilize the space in the housing 10, so that the first control unit 60 can be arranged close to the PFC inductor 21, but also the airflow in the main heat dissipation channel 11 can take away the heat of the power semiconductor device 91 in the first power semiconductor module 90, so as to achieve heat dissipation of the power semiconductor device 91. Since the airflow in the main heat dissipation channel 11 is relatively concentrated, when the airflow flows through the semiconductor device, it can better take away the heat of the semiconductor device, so that the power semiconductor device 91 can achieve better heat dissipation, so as to meet the heat dissipation requirements of the first power semiconductor module 90, and can improve the heat dissipation performance of the power module, so as to ensure the safe, reliable and stable operation of the power module.

[0086] It should be noted that see Figure 2 As shown, the power module further includes a fan 200. The fan 200 is disposed on one side of the main heat dissipation channel 11 along the second direction X. The fan 200 is used to form an airflow along the second direction X, so that the airflow formed by the fan 200 can flow along the second direction X and achieve heat dissipation for the first power semiconductor module 90 when flowing through the main heat dissipation channel 11.

[0087] See also Figure 2 As shown, for example, when the heat dissipation method of the power module is to blow air into the shell 10, the first end 111 of the main heat dissipation channel 11 can be arranged adjacent to the vent 210 of the fan 200, and the second end 112 of the main heat dissipation channel 11 can be arranged away from the vent 210 of the fan 200, so that the airflow formed by the fan 200 can enter the main heat dissipation channel 11 through the vent 210 and the first end 111, thereby realizing the heat dissipation of the first power semiconductor module 90. After the airflow dissipates the heat of the first power semiconductor module 90, it can be discharged to the outside of the shell 10 through the right side of the shell 10, thereby realizing the rapid heat dissipation of the first power semiconductor module 90. The fan 200 can be located on one side of the shell 10 in the second direction X and opposite to the main heat dissipation channel 11, so that the airflow formed by the fan 200 can directly flow through the main heat dissipation channel 11. Ventilation port

[0088] For another example, in some other embodiments, when the heat dissipation method of the power module is exhaust, the first end 111 and the second end 112 of the main heat dissipation channel 11 remain in the same position relative to the fan 200. Under the suction of the fan 200, the airflow outside the shell 10 can enter the main heat dissipation channel 11 through the second end 112, and after the airflow dissipates the heat for the first power semiconductor module 90, it enters the fan 200 through the first end 111 and the vent 210, so that the airflow is discharged to the outside of the shell 10 through the fan 200.

[0089] The following further describes the power module by taking the heat dissipation method of the power module as blowing air into the housing 10 as an example.

[0090] See also Figure 2 As shown, in addition to the power semiconductor device 91, the first power semiconductor module 90 may also include a first substrate 100. The first substrate 100 is located in the main heat dissipation channel 11 and is perpendicular to the first plane. A plurality of power semiconductor devices 91 may be arranged on both sides of the first substrate 100 in the first direction Y, or a plurality of power semiconductor devices 91 may all be arranged on the same side of the first substrate 100 in the first direction Y. In this way, when the airflow in the main heat dissipation channel 11 flows through the first substrate 100, it will be diverted to both sides of the first substrate 100 to take away the heat of the power semiconductor devices 91 located on both sides of the first substrate 100, thereby achieving heat dissipation for all power semiconductor devices 91 on the first substrate 100, so that the first power semiconductor module 90 can achieve a better heat dissipation effect.

[0091] The two side edges of the first substrate 100 in the second direction X can extend toward the two ends of the main heat dissipation channel 11, so that the first substrate 100 forms a slender structure in the main heat dissipation channel 11. In this way, while increasing the layout area of ​​the first substrate 100, it is possible to reduce the resistance of the airflow when flowing in the main heat dissipation channel 11, so as to improve the heat dissipation effect of the first power semiconductor module 90 in the main heat dissipation channel 11.

[0092] The number of the first substrates 100 may be one, two, or three. When the number of the first substrates 100 is two or more (including two), the two or more first substrates 100 may be arranged in the main heat dissipation channel 11 at intervals along the first direction Y, and the power semiconductor devices 91 in the first power semiconductor module 90 may be evenly arranged on each first substrate 100 to ensure that the airflow in the main heat dissipation channel 11 can take away the heat of the power semiconductor devices 91 on each first substrate 100, so as to reasonably utilize the space of the main heat dissipation channel 11 in the first direction Y to achieve effective heat dissipation of the first power semiconductor module 90.

[0093] It should be noted that, in addition to the first power semiconductor module 90 , the high power consumption module in the internal device also includes a PFC inductor 21 , a resonant inductor 41 , a transformer 30 and a rectifier unit in the secondary rectifier circuit 50 .

[0094] See also Figure 2As shown, the first power semiconductor module 90 and the first control unit 60 are respectively located on both sides of the PFC inductor 21 along the Y direction, so that the first control unit 60 is arranged close to the PFC inductor 21 in the Y direction. At the same time, since the first power semiconductor module 90 is located in the main heat dissipation channel 11, the PFC inductor 21 can be close to the main heat dissipation channel 11 in the Y direction, so that the airflow in the main heat dissipation channel 11 can take away the heat of the PFC inductor 21 while dissipating the heat of the first power semiconductor module 90, thereby achieving simultaneous heat dissipation of the PFC inductor 21, and further improving the heat dissipation performance of the power module, so as to ensure safe, reliable and stable operation of the power module.

[0095] It should be noted that part of the airflow formed by the fan 200 can also flow along the gap between the PFC inductor 21 and the capacitor module 81, or the gap between the PFC inductor 21 and the capacitor module 81 and the top or bottom of the housing 10, taking away the heat of the PFC inductor 21 and the capacitor module 81, and achieving effective heat dissipation of the PFC inductor 21 and the capacitor module 81, so as to meet the heat dissipation requirements of the PFC inductor 21 and the capacitor module 81. The gap between the PFC inductor 21 and the capacitor module 81, and the gap between the PFC inductor 21 and the capacitor module 81 and the top or bottom of the housing 10 can form an auxiliary heat dissipation channel in the housing 10. The flow rate of the airflow in the auxiliary heat dissipation channel is less than the flow rate of the airflow in the main heat dissipation channel 11. The flow of the airflow in the auxiliary heat dissipation channel is not shown.

[0096] See also Figure 2 As shown, in addition to the capacitor module 81, the low-power module 80 also includes other low-power devices 82. For example, the low-power module 80 also includes an output filter capacitor (e.g., an electrolytic capacitor) of the DC / DC module, an auxiliary power supply, etc. These other low-power devices 82 are located on the side of the capacitor module 81 away from the fan 200 along the X direction. In this way, after the airflow in the auxiliary heat dissipation channel dissipates heat for the capacitor module 81, it can flow through these other low-power devices 82 to achieve effective heat dissipation for these other low-power devices 82, which can further improve the heat dissipation performance of the power module to ensure safe, reliable and stable operation of the power module.

[0097] As described above, the high power consumption module in the internal device also includes a transformer 30. The transformer 30 is arranged on one side of the PFC inductor 21 along the X direction. A first sub-heat dissipation channel 12 and a second sub-heat dissipation channel 13 are also arranged in the housing 10. The first sub-heat dissipation channel 12 and the second sub-heat dissipation channel 13 are respectively located on both sides of the transformer 30 along the Y direction. The first sub-heat dissipation channel 12 and the second sub-heat dissipation channel 13 both extend along the Y direction and are connected to the main heat dissipation channel 11. In this way, after passing through the main heat dissipation channel 11, the airflow will enter the first sub-heat dissipation channel 12 and the second sub-heat dissipation channel 13 respectively, so as to realize effective heat dissipation of the transformer 30 from different sides of the transformer 30 in the Y direction, which can further improve the heat dissipation performance of the power module to ensure the safe, reliable and stable operation of the power module.

[0098] See also Figure 2 and Figure 4 As shown, in addition to the primary power semiconductor device in the primary circuit 40, the primary circuit 40 also includes a resonant inductor 41. Figure 4 In FIG. 1 , the resonant inductor 41 is represented by the symbol Lr. The resonant inductor 41 and the PFC inductor 21 (L1) form an inductor module. The transformer 30 and the inductor module are provided with a first gap 300 along the second direction X, and the second sub-heat dissipation channel 13 is connected to the main heat dissipation channel 11 through the first gap 300. For example, the first gap 300 can be a safety distance between the transformer 30 and the inductor module. In this way, the second sub-heat dissipation channel 13 can cleverly use the first gap 300 to achieve the connection between the second sub-heat dissipation channel 13 and the main heat dissipation channel 11.

[0099] See also Figure 3 As shown, along the second direction X, the resonant inductor 41 is located on the side of the PFC inductor 21 away from the fan 200, and the first gap 300 is located between the resonant inductor 41 and the transformer 30. In this way, after the airflow passes through the main heat dissipation channel 11, part of the airflow will enter the first gap 300, dissipate heat for the resonant inductor 41, and then enter the second sub-heat dissipation channel 13 to dissipate heat for the transformer 30. At the same time, after dissipating heat for the PFC inductor 21, part of the airflow formed by the fan 200 can also flow along the second direction X to dissipate heat for the resonant inductor 41 to meet the heat dissipation requirements of the resonant inductor 41.

[0100] See also Figure 2As shown, the internal device also includes an input connector 400 and an output connector 14. Along the first direction Y, the input connector 400 can be arranged on the side of the fan 200 adjacent to the capacitor module 81. As the input end of the power module, the input connector 400 can provide an input source for the power module. The primary circuit 40 can convert the direct current signal (DC signal) output by the PFC module 20 into an alternating current signal (AC signal), which is output from the output end of the power module after passing through the transformer 30 and the secondary rectifier circuit 50. Along the first direction Y, the output connector 14 is arranged on the side of the transformer 30 away from the PFC module 20. As the output end of the power module, the output connector 14 is used to electrically connect the power module with external devices.

[0101] See also Figure 2 and Figure 4 As shown, as described above, the high power consumption module in the internal device also includes a secondary rectifier circuit 50. The secondary rectifier circuit 50 includes a first rectifier unit 51. The first rectifier unit 51 has a rectifier device 53. The rectifier device 53 may include a synchronous rectifier tube and a filter capacitor (for example, a chip capacitor). Figure 4 The synchronous rectifiers are represented by symbols SR1 and SR2 respectively. The first rectifier unit 51 is arranged in the first sub-heat dissipation channel 12, so that when the airflow flows through the main heat dissipation channel 11 and the first sub-heat dissipation channel 12, it can take away the heat of the rectifier device 53 in the first rectifier unit 51, realize the heat dissipation of the first rectifier unit 51, and further improve the heat dissipation performance of the power module to ensure the safe, reliable and stable operation of the power module.

[0102] See also Figure 1 and Figure 2 As shown, the first rectifier unit 51 includes a second substrate 500. The second substrate 500 is located in the first heat dissipation sub-channel 12 and is perpendicular to the first plane. The plurality of rectifier devices 53 in the first rectifier unit 51 can be arranged on both sides of the second substrate 500 in the first direction Y, or the plurality of rectifier devices 53 in the first rectifier unit 51 can all be arranged on the same side of the second substrate 500 in the first direction Y, so that the first rectifier unit 51 can achieve a better heat dissipation effect.

[0103] The two side edges of the second substrate 500 in the second direction X can extend toward the two ends of the first sub-heat dissipation channel 12, so that the second substrate 500 forms a slender structure in the first sub-heat dissipation channel 12. In this way, while increasing the cloth area of ​​the second substrate 500, it is possible to reduce the resistance of the airflow when flowing in the first sub-heat dissipation channel 12, so as to improve the heat dissipation effect of the first rectifier unit 51 in the main heat dissipation channel 11.

[0104] See also Figure 3As shown, in some embodiments, the secondary rectifier circuit 50 may further include a second rectifier unit 52. The second rectifier unit 52 also includes a rectifier device 53. The second rectifier unit 52 is arranged in the second sub-heat dissipation channel 13, so that when the airflow flows through the second sub-heat dissipation channel 13 via the main heat dissipation channel 11, the heat of the rectifier device 53 in the second rectifier unit 52 can be taken away, and the heat dissipation of the second rectifier unit 52 can be achieved, which can further improve the heat dissipation performance of the power module, so as to ensure the safe, reliable and stable operation of the power module.

[0105] It should be noted that the type of the rectifier device 53 in the second rectifier unit 52 and the arrangement of the rectifier device 53 in the second sub-heat dissipation channel 13 can refer to the above description of the first rectifier unit 51, which will not be repeated here.

[0106] See also Figure 4 As shown, the internal device also includes a second control unit, which is electrically connected to the primary circuit 40 and the secondary rectifier circuit 50, and is used to control the resonant inductor 41 and part of the secondary rectifier circuit 50. The low power module 80 includes at least part of the second control unit. The structure of the second control unit can be determined according to the structure of the existing power module. In the present disclosure, the structure of the second control unit is not described in detail.

[0107] See also Figure 3 and Figure 4 As shown, in some embodiments, the internal device may further include a filter unit 600. Along the second direction X, the filter unit 600 may be located between the fan 200 and the PFC inductor 21, so that the filter unit 600 is adjacent to the input connector 400. The filter unit 600 is an electromagnetic interference filter (EMI filter). The filter unit 600 generally includes an inductor and a capacitor.

[0108] Since the filter unit 600 is adjacent to the input connector 400, the filter unit 600 can be located at the front end of the power module. This can prevent the power module from radiating interference to the outside. At the same time, the characteristics of inductance passing DC and blocking AC, and capacitor passing AC and blocking DC can be used to prevent the noise of the power module from flowing out, so as to further reduce the noise of the power module during operation.

[0109] In the description of the present disclosure, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present disclosure and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present disclosure.

[0110] In the description of the present disclosure, it should be understood that the terms "including" and "having" and any variations thereof used herein are intended to cover non-exclusive inclusions. For example, a process, method, display structure, product or apparatus comprising a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to these processes, methods, products or apparatuses.

[0111] The term "and / or" used in this application is only a description of the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship.

[0112] Unless otherwise expressly specified and limited, the terms "installed", "connected", "connected", "fixed", etc. should be understood in a broad sense, for example, it can be a fixed connection, it can also be a detachable connection, or it can be integrated; it can be directly connected, or it can be indirectly connected through an intermediate medium, it can make the internal connection of two elements or the interaction relationship between the two elements. For ordinary technicians in this field, the specific meanings of the above terms in this disclosure can be understood according to the specific circumstances. In addition, the terms "first", "second", etc. are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated.

[0113] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present disclosure, rather than to limit them. Although the present disclosure has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein by equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present disclosure.

Claims

1. A power module, characterized in that: include: A housing, wherein the housing comprises: A PFC module, including a PFC inductor and a PFC power semiconductor device group; DC / DC module, including transformer, primary circuit and secondary rectification circuit; A first control unit is disposed adjacent to the PFC inductor and is used to receive a sampling signal of a voltage or a current from the PFC module to control the power module; A main heat dissipation channel is located between the PFC inductor and the housing in the first direction, and the main heat dissipation channel extends along the second direction; wherein A first power semiconductor module is provided in the main heat dissipation channel, wherein the first power semiconductor module includes the PFC power semiconductor device group and all primary power semiconductor devices in the primary circuit; The first direction and the second direction are located in a first plane and intersect each other.

2. The power module according to claim 1, characterized in that: The first power semiconductor module and the first control unit are respectively located on two sides of the PFC inductor along the first direction.

3. The power module according to claim 1, characterized in that: Also includes: A sampling unit is used to sample the current of the PFC inductor, wherein the sampling unit is located between the PFC inductor and the first control unit, so that the sampling signal is directly transmitted to the first control unit.

4. The power module according to claim 1 or 2, characterized in that: The housing is also provided with a low power consumption module, including: Capacitor module, a projection of the first control unit on the first plane at least partially overlaps with a projection of the capacitor module on the first plane.

5. The power module according to claim 4, characterized in that: The capacitor module includes at least one electrolytic capacitor.

6. The power module according to claim 1, characterized in that: The transformer is arranged on one side of the PFC inductor along the second direction; The housing is also provided with: The first sub-heat dissipation channel and the second sub-heat dissipation channel are respectively located on both sides of the transformer along the first direction. The first sub-heat dissipation channel and the second sub-heat dissipation channel both extend along the second direction and are connected to the main heat dissipation channel.

7. The power module according to claim 6, characterized in that: The primary circuit includes a resonant inductor, and the resonant inductor and the PFC inductor form an inductor module; A first gap is provided between the transformer and the inductor module along the second direction, and the second sub-heat dissipation channel is communicated with the main heat dissipation channel through the first gap.

8. The power module according to claim 6 or 7, characterized in that: The secondary side rectifying circuit comprises a first rectifying unit, and the first rectifying unit is arranged in the first sub-heat dissipating channel.

9. The power module according to claim 8, characterized in that: The secondary side rectifier circuit further includes a second rectifier unit, and the second rectifier unit is arranged in the second sub-heat dissipation channel.

10. The power module according to claim 1, characterized in that: Also includes: A fan is disposed on one side of the main heat dissipation channel along the second direction, and is used to form an airflow along the second direction.

11. The power module according to claim 10, characterized in that: Also includes: A filter unit, wherein along the second direction, the filter unit is located between the fan and the PFC inductor.

12. The power module according to claim 1, characterized in that: The frequency of the power module is greater than or equal to 30KHz.

13. The power module according to claim 1, characterized in that: The first power semiconductor module includes a first substrate and a plurality of power semiconductor devices, wherein the plurality of power semiconductor devices are arranged on two opposite sides of the first substrate along a first direction, or the plurality of power semiconductor devices are all arranged on the same side of the first substrate along the first direction.

14. The power module according to claim 8, characterized in that: The first rectifying unit includes a second substrate and a plurality of rectifying devices, wherein the plurality of rectifying devices are arranged on two opposite sides of the second substrate along a first direction, or the plurality of rectifying devices are all arranged on the same side of the second substrate along the first direction.

15. The power module according to claim 9, characterized in that: The second rectifying unit includes a second substrate and a plurality of rectifying devices, wherein the plurality of rectifying devices are arranged on two opposite sides of the second substrate along a first direction, or the plurality of rectifying devices are all arranged on the same side of the second substrate along the first direction.

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