Plasma gas cleaning system

Abstract

The utility model discloses a plasma gas cleaning system, which relates to the technical field of pipeline cleaning of semiconductor equipment, and comprises a first gas pipeline, a second gas pipeline, a third gas pipeline and a fourth gas pipeline, the first pneumatic diaphragm valve is connected with the first gas pipeline and used for controlling whether the cleaning gas flows into the cleaning system reaction emitter or not; the second gas pipeline is connected with the first pneumatic diaphragm valve and is used for conveying clean gas; the cleaning system reaction emitter is connected with the second gas pipeline and is used for emitting plasma cleaning gas; and the second pneumatic diaphragm valve is connected with the first gas pipeline and is used for controlling whether the clean gas flows into the equipment end reaction emitter or not. The cleaning efficiency can be effectively improved, the cleaning period is remarkably shortened, membrane pollutants can be rapidly removed, and efficient surface cleaning is achieved. Meanwhile, due to the non-contact cleaning characteristic of the plasma, surface damage caused by a traditional cleaning mode can be avoided, and it is ensured that the cleaning effect is more ideal.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor equipment pipeline cleaning, in particular to a plasma gas cleaning system. Background Art

[0002] Cleaning technology is essential to ensure product quality, improve production efficiency and maintain equipment performance. Although traditional cleaning methods, such as mechanical cleaning and chemical cleaning, can meet cleaning needs to a certain extent, they have many disadvantages. For example, mechanical cleaning may damage the surface of the material, chemical cleaning may introduce new pollutants, and the use of chemical reagents poses a potential threat to the environment and human health.

[0003] With the continuous advancement of industrial technology, the requirements for cleaning technology are becoming higher and higher. Especially in the fields of microelectronics, semiconductors, precision manufacturing, etc., the current method of cleaning pipelines on semiconductor equipment is to manually dismantle gas pipelines and valves with residual films, and use gas or solution to clean the pipelines. It is difficult to achieve deep and comprehensive cleaning, and pollutants often remain; in addition, manual cleaning operations will inevitably accumulate dust, impurities and other pollutants, which requires frequent repeated cleaning.

[0004] In recent years, plasma gas cleaning technology has gradually attracted attention due to its advantages such as high efficiency, environmental protection and non-contact. Plasma is generated by gas discharge and has highly active and high-energy particles such as ions, electrons and free radicals. When these particles come into contact with pollutants, they can react chemically to clean the surface. Utility Model Content

[0005] The utility model aims to provide a plasma gas cleaning system for use in cleaning semiconductor equipment pipelines and valves, which does not require the use of chemical reagents, avoids the generation of secondary pollution, and does not cause mechanical damage to the material surface.

[0006] To achieve the above object, the utility model provides a plasma gas cleaning system, comprising:

[0007] A first gas pipeline is connected to a gas cabinet of a semiconductor device and is used to transport a clean gas;

[0008] a first pneumatic diaphragm valve connected to the first gas pipeline and used to control whether the cleaning gas flows into the cleaning system reaction emitter;

[0009] a second gas pipeline connected to the first pneumatic diaphragm valve for conveying clean gas;

[0010] a cleaning system reaction emitter, connected to the second gas pipeline, for emitting plasma cleaning gas;

[0011] The second pneumatic diaphragm valve is connected to the first gas pipeline and is used to control whether the clean gas flows into the device-end reaction transmitter.

[0012] Furthermore, the second gas pipeline is connected to the top of the cleaning system reaction emitter through a sealing ring and a panel mounting flange clamp.

[0013] Furthermore, the second pneumatic diaphragm valve is connected to a process chamber cleaning pipeline of the semiconductor equipment through a third gas pipeline and a VCR female connector.

[0014] Furthermore, it also includes:

[0015] An integrated gas delivery line connected to the cleaning system reaction emitter for delivering plasma cleaning gas;

[0016] A gas flow stop swing valve, connected to the integrated gas transmission pipeline, is used to adjust the flow of plasma cleaning gas;

[0017] The split gas transmission pipeline is connected to the gas flow cut-off swing valve and is used to transmit the plasma cleaning gas.

[0018] Furthermore, the split gas transmission pipeline is welded to the exhaust mixing main pipe and is used to introduce the plasma cleaning gas into the pipeline to be cleaned.

[0019] Furthermore, when the first pneumatic diaphragm valve is opened and the second pneumatic diaphragm valve is closed, the clean gas in the gas cabinet flows through the first gas pipeline and the second gas pipeline into the cleaning system reaction emitter; when the second pneumatic diaphragm valve is opened and the first pneumatic diaphragm valve is closed, the clean gas in the gas cabinet flows through the first gas pipeline and the third gas pipeline into the process chamber of the semiconductor equipment.

[0020] Furthermore, it also includes an electrical control box, in which a signal selector and a cleaning system controller are arranged. The cleaning system controller is respectively connected to the cleaning system reaction transmitter and the signal selector, and the signal selector is also connected to the equipment-end controller, the cleaning system reaction transmitter, and the equipment-end reaction transmitter.

[0021] Furthermore, a valve switch controller is provided on one side of the electric control box, and the valve switch controller is respectively connected to the cleaning system controller, the first pneumatic diaphragm valve, the second pneumatic diaphragm valve, and the gas flow cut-off swing valve.

[0022] Furthermore, the integrated gas transmission pipeline is welded in the water-cooling cavity, a detachable cooling block is provided on the split gas transmission pipeline, and a detachable cooling block is also provided at the bottom of the exhaust mixing main pipe.

[0023] Furthermore, the cleaning system reaction emitter is installed on a clean gas source support frame through a base plate, and the clean gas source support frame is connected to an adapter through a rotating axis; the adapter is installed on a height adjustment bracket, and adapter holes of different heights are distributed on the height adjustment bracket, and the height adjustment bracket is fixed on a support column of the semiconductor equipment.

[0024] As a further step, a vertically symmetrical rotating plate is provided at the corner of the clean air source support frame, a radial ball bearing is provided between the rotating plate and the rotating shaft, and the radial ball bearing is fixed by a bearing gland and a thin fine-pitch nut.

[0025] Due to the adoption of the above technical solutions, the utility model can achieve the following technical effects: the plasma gas cleaning system can effectively improve the cleaning efficiency and significantly shorten the cleaning cycle. Through the direct action of high-energy plasma on the surfaces of semiconductor pipelines, valves, and process chambers, film pollutants can be quickly removed to achieve efficient surface cleaning. At the same time, due to the non-contact cleaning characteristics of plasma, surface damage caused by traditional cleaning methods can be avoided, ensuring a more ideal cleaning effect.

[0026] The plasma gas cleaning system can realize online cleaning, which can significantly improve production efficiency and reduce production delays and product quality problems caused by cleaning problems. At the same time, reducing the number of downtimes and manual interventions during the cleaning process also helps to reduce production costs and improve the economic benefits of the enterprise.

[0027] The system saves material costs. The clean gas at the equipment end flows into the clean system reaction transmitter or the equipment end reaction transmitter through the first pneumatic diaphragm valve and the second pneumatic diaphragm valve. There is no need to re-make the gas pipeline to provide the gas required by the clean system reaction transmitter. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the technical solutions of the embodiments of the utility model, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0029] Figure 1 This is the gas circuit schematic diagram of the plasma gas cleaning system;

[0030] Figure 2 An exploded view of a plasma gas cleaning system and semiconductor equipment;

[0031] Figure 3 It is an overall schematic diagram of a plasma gas cleaning system integrated on a semiconductor device;

[0032] Figure 4 An exploded view of the plasma gas cleaning system;

[0033] Figure 5 It is a schematic diagram of the structure of the plasma gas cleaning system;

[0034] Figure 6 This is the connection schematic diagram of the electrical control part of the plasma gas cleaning system;

[0035] Explanation of the serial numbers in the figure: 1. Second pneumatic diaphragm valve, 2. First pneumatic diaphragm valve, 3. Clean gas source support frame, 4. Water-cooled cavity, 5. Sealing ring, 6. Gas flow cut-off swing valve, 7. Electric control box, 8. Valve switch controller, 9. Outer cover, 10. Clean system reaction transmitter, 11. Base plate, 12. Radial ball bearing, 13. Adapter, 14. Height adjustment bracket; 15. Rotating shaft; 16. Integrated gas transmission pipeline; 17. Split gas transmission pipeline; 18. Pipeline to be cleaned; 19. Valve to be cleaned; 20. Exhaust mixing main pipe; 21. Double-claw vacuum flange clamp; 22. VCR female head; 23. Vacuum pipeline; 24. Panel mounting flange; 25. Second gas pipeline; 26. First gas pipeline; 27. Third gas pipeline. DETAILED DESCRIPTION

[0036] In order to make the purpose, technical solution and advantages of the embodiment of the utility model clearer, the technical solution in the embodiment of the utility model will be clearly and completely described below in conjunction with the drawings in the embodiment of the utility model. Obviously, the described embodiment is a part of the embodiment of the utility model, not all of the embodiments. Based on the embodiment of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0037] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application may be combined with each other.

[0038] It should also be noted that the terms used in this application are generally commonly used by those skilled in the art. If there is any inconsistency with the commonly used terms, the terms in this application shall prevail. For those of ordinary skill in the art, the specific meanings of the terms in this application in this utility model can be understood according to the specific circumstances.

[0039] Finally, it should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that there is any such actual relationship or order between these entities or operations. It should be understood that the terms used in this way can be interchanged under appropriate circumstances, which is only the way of distinguishing the objects of the same attributes when describing them in the embodiments of the present application. Moreover, the terms "include" and "comprise" not only include those elements, but also include other elements that are not clearly listed, or also include elements inherent to such processes, methods, articles or equipment. In the absence of more restrictions, the elements limited by the statement "include..." do not exclude the existence of other identical elements in the process, method, article or equipment including the elements.

[0040] This embodiment provides a plasma gas cleaning system, comprising:

[0041] A first gas pipeline is connected to a gas cabinet of a semiconductor device and is used to transport a clean gas;

[0042] a first pneumatic diaphragm valve connected to the first gas pipeline and used to control whether the cleaning gas flows into the cleaning system reaction emitter;

[0043] a second gas pipeline connected to the first pneumatic diaphragm valve for conveying clean gas;

[0044] A cleaning system reaction emitter, connected to the second gas pipeline through a sealing ring and a panel mounting flange clamp, for emitting plasma cleaning gas;

[0045] A second pneumatic diaphragm valve is connected to the first gas pipeline and is used to control whether the clean gas flows into the device-end reaction transmitter; the second pneumatic diaphragm valve is also connected to the process chamber clean pipeline of the semiconductor device through a third gas pipeline and a VCR female connector;

[0046] An integrated gas delivery line connected to the cleaning system reaction emitter for delivering plasma cleaning gas;

[0047] A gas flow stop swing valve is connected to the integrated gas transmission pipeline and is used to adjust the flow of the plasma cleaning gas; the gas flow stop swing valve is connected to the valve switch controller, and when the cleaning system reacts that the transmitter needs maintenance, the gas flow stop swing valve is closed;

[0048] The split gas transmission pipeline is connected to the gas flow cut-off swing valve and is used to transmit plasma cleaning gas; the split gas transmission pipeline is welded on the exhaust mixing main pipe of the PECVD equipment to introduce the plasma cleaning gas into the pipeline and valve to be cleaned;

[0049] An electric control box is fixed on the ground, and a signal selector and a cleaning system controller are arranged in the electric control box. The cleaning system controller is connected to the cleaning system reaction transmitter and the signal selector respectively, and the signal selector is also connected to the equipment-side controller, the cleaning system reaction transmitter, and the equipment-side reaction transmitter; wherein the signal selector is used to transmit the cleaning parameter signal of the process chamber or the cleaning parameter signal of the pipeline; the cleaning parameters include transmission power, transmission frequency, transmission speed and working time, etc.; the cleaning system controller is used to control the signal selector to receive the signal of the equipment-side controller; the equipment-side reaction transmitter is used to deliver the cleaning gas into the process chamber to be cleaned in a high-pressure jet manner; when the equipment-side reaction transmitter fails, feedback is given to the equipment-side controller;

[0050] An outer cover, used to protect the gas pipeline connected to the first pneumatic diaphragm valve and the second pneumatic diaphragm valve;

[0051] The valve switch controller is respectively connected to the cleaning system controller, the first pneumatic diaphragm valve, the second pneumatic diaphragm valve, and the gas flow cut-off swing valve, and is used to execute valve opening and closing actions.

[0052] Preferably, the integrated gas transmission pipeline is welded in a water-cooling cavity, a removable cooling block is provided on the split gas transmission pipeline, and a removable cooling block is also provided at the bottom of the exhaust mixing main pipe for cooling the partition pipeline.

[0053] Preferably, the cleaning system reaction emitter is installed on the clean gas source support frame through a bottom plate, and the clean gas source support frame is connected to the adapter through a rotating shaft; the adapter is installed on a height adjustment bracket, and adapter holes of different heights are distributed on the height adjustment bracket, and the height adjustment bracket is fixed on the semiconductor equipment support column. Therefore, the installation height can be adjusted on site, and the installation is convenient.

[0054] Preferably, a vertically symmetrical rotating plate is provided at the corner of the clean gas source support frame, and a radial ball bearing is provided between the rotating plate and the rotating shaft, and the radial ball bearing is fixed by a bearing gland and a thin fine-pitch nut. When the semiconductor equipment is maintained, the clean system reaction emitter can be moved to another position through the rotating structure for easy operation.

[0055] Preferably, the cleaning system reaction emitter is connected to the integrated gas transmission pipeline through a sealing ring and a panel mounting flange clamp, the integrated gas transmission pipeline is connected to the gas flow cut-off swing valve through a sealing ring and a wing nut flange clamp aluminum, the gas flow cut-off swing valve is connected to the split gas transmission pipeline through a sealing ring and a wing nut flange clamp aluminum, the split gas transmission pipeline is welded to the exhaust mixing main pipe, and the exhaust mixing main pipe is connected to the vacuum pipeline of the PECVD equipment; the first pneumatic diaphragm valve and the second pneumatic diaphragm valve are both connected to the gas supply pipeline of the PECVD equipment through a VCR female connector; the VCR female connector is used to connect the gas pipeline with a small cross-section at the equipment end, and the gas pipeline with a large cross-section is connected using a wing nut flange clamp aluminum and a sealing ring, and the gas pipeline with a larger cross-section is connected using a double-claw vacuum flange clamp, so as to achieve the effect of safety and long service life.

[0056] This embodiment also provides a plasma gas cleaning method, which is implemented based on the above-mentioned online cleaning system. Since the pipeline to be cleaned and the valve to be cleaned are too far away from the process chamber, the contaminants on the pipeline to be cleaned and the valve to be cleaned cannot be completely removed when cleaning the process chamber. The pipeline to be cleaned and the valve to be cleaned are connected together and the path is close, so the valve is cleaned together when the pipeline is cleaned, which specifically includes:

[0057] When the process chamber needs to be cleaned, the cleaning system controller opens the second pneumatic diaphragm valve, closes the first pneumatic diaphragm valve, and enables the signal selector to receive the process chamber cleaning parameters of the device-side controller, and the process chamber cleaning parameters are transmitted to the device-side reaction transmitter, and the device-side reaction transmitter sends the cleaning gas in the gas cabinet into the process chamber in a high-pressure jet manner for cleaning. After the process chamber cleaning is completed, the cleaning system controller opens the second pneumatic diaphragm valve and closes the first pneumatic diaphragm valve;

[0058] The signal selector of the cleaning system controller receives the pipeline cleaning parameters of the device-end controller, and the pipeline cleaning parameters are transmitted to the cleaning system reaction transmitter. The cleaning system reaction transmitter sends the cleaning gas in the gas cabinet into the pipeline in a high-pressure spray manner for cleaning. After the pipeline cleaning is completed, the cleaning system controller opens the second pneumatic diaphragm valve, closes the first pneumatic diaphragm valve, and closes the gas flow stop swing valve through the valve switch controller.

[0059] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. Plasma gas cleaning system, characterized in that, include: A first gas pipeline is connected to a gas cabinet of a semiconductor device and is used to transport a clean gas; a first pneumatic diaphragm valve connected to the first gas pipeline and used to control whether the cleaning gas flows into the cleaning system reaction emitter; a second gas pipeline connected to the first pneumatic diaphragm valve for conveying clean gas; a cleaning system reaction emitter, connected to the second gas pipeline, for emitting plasma cleaning gas; The second pneumatic diaphragm valve is connected to the first gas pipeline and is used to control whether the clean gas flows into the device-end reaction transmitter.

2. The plasma gas cleaning system according to claim 1, characterized in that: The second gas pipeline is connected to the top of the cleaning system reaction emitter through a sealing ring and a panel mounting flange clamp.

3. The plasma gas cleaning system according to claim 1, characterized in that: The second pneumatic diaphragm valve is connected to a process chamber cleaning pipeline of a semiconductor device through a third gas pipeline and a VCR female connector.

4. The plasma gas cleaning system according to claim 1, characterized in that: Also includes: An integrated gas delivery line connected to the cleaning system reaction emitter for delivering plasma cleaning gas; A gas flow stop swing valve, connected to the integrated gas transmission pipeline, is used to adjust the flow of plasma cleaning gas; The split gas transmission pipeline is connected to the gas flow cut-off swing valve and is used to transmit the plasma cleaning gas.

5. The plasma gas cleaning system according to claim 4, characterized in that: The split gas transmission pipeline is welded on the exhaust mixing main pipe and is used to introduce the plasma cleaning gas into the pipeline to be cleaned.

6. The plasma gas cleaning system according to claim 1, characterized in that: When the first pneumatic diaphragm valve is opened and the second pneumatic diaphragm valve is closed, the clean gas in the gas cabinet flows through the first gas pipeline and the second gas pipeline into the cleaning system reaction emitter; when the second pneumatic diaphragm valve is opened and the first pneumatic diaphragm valve is closed, the clean gas in the gas cabinet flows through the first gas pipeline and the third gas pipeline into the process chamber of the semiconductor equipment.

7. The plasma gas cleaning system according to claim 4, characterized in that: It also includes an electrical control box, in which a signal selector and a cleaning system controller are arranged. The cleaning system controller is respectively connected to the cleaning system reaction transmitter and the signal selector. The signal selector is also connected to the device-end controller, the cleaning system reaction transmitter and the device-end reaction transmitter.

8. The plasma gas cleaning system according to claim 7, characterized in that: A valve switch controller is provided on one side of the electric control box, and the valve switch controller is respectively connected to the cleaning system controller, the first pneumatic diaphragm valve, the second pneumatic diaphragm valve, and the gas flow cut-off swing valve.

9. The plasma gas cleaning system according to claim 1, characterized in that: The cleaning system reaction emitter is installed on a clean gas source support frame through a base plate, and the clean gas source support frame is connected to an adapter through a rotating shaft; the adapter is installed on a height adjustment bracket, and adapter holes of different heights are distributed on the height adjustment bracket. The height adjustment bracket is fixed on a semiconductor equipment support column.

10. The plasma gas cleaning system according to claim 9, characterized in that: A vertically symmetrical rotating plate is provided at the corner of the clean air source support frame, a radial ball bearing is provided between the rotating plate and the rotating shaft, and the radial ball bearing is fixed by a bearing gland and a thin fine-thread nut.

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