Semiconductor thermoelectric power generation sheet

Abstract

The utility model discloses a semiconductor thermoelectric power generation sheet, which comprises a thermoelectric power generation sheet body and right-angle sealing joints arranged on the two sides of the surface of the thermoelectric power generation sheet body, and a positive lead and a negative lead which are electrically connected with the thermoelectric power generation sheet body are respectively arranged in the two right-angle sealing joints. The top end of the thermoelectric power generation sheet body is provided with an upper heat-conducting sheet, and the right-angle sealing joint comprises right-angle joints fixed on the two sides of the surface of the thermoelectric power generation sheet body. According to the utility model, the gap of the combination point of the lead and the shell is reduced, so that the risk of heat loss is reduced, the fixed position of the lead can be better maintained by using the right-angle sealing joint, and the possibility of being influenced by the external environment is reduced; and the stability and the reliability of the thermoelectric power generation sheet in complex environments such as vibration and temperature change can be improved.

Description

Technical Field

[0001] The utility model relates to the technical field of temperature difference power generation sheets, in particular to a semiconductor temperature difference power generation sheet. Background Art

[0002] Semiconductor thermoelectric power generation chip converts thermal energy directly into electrical energy through the temperature difference effect. Its structure includes hot end and cold end, semiconductor material and electrode. The hot end and the cold end are in contact with the heat source and the cold source to form a temperature difference. The semiconductor material has special thermoelectric properties and can generate a potential difference under the action of temperature difference. The electrode connects the semiconductor material to conduct the generated current. Its working principle is based on the thermoelectric effect, in which electrons drift under the action of temperature difference to generate a potential difference, and the current will release or absorb heat when passing through the contact point of the material, enhancing the temperature difference effect. By maximizing the temperature difference and designing materials with different thermal conductivity, the semiconductor thermoelectric power generation chip achieves The efficient conversion of thermal energy to electrical energy has the characteristics of extensive low-temperature thermal energy collection and thermoelectric power supply. In order to maximize the temperature difference, the current thermoelectric power generation sheet is usually designed as a thin sheet to reduce heat conduction. However, for the positive and negative leads led out of the thermoelectric power generation sheet, gaps are prone to occur at the junction of the positive and negative leads and the thermoelectric power generation sheet shell. When the gap exists, the thermoelectric power generation sheet is easily affected by the external environment during operation, such as vibration, temperature changes, etc., which leads to further loosening or damage of the junction between the positive and negative leads and the shell, thereby affecting the stability and reliability of the entire thermoelectric power generation sheet. Utility Model Content

[0003] The purpose of the utility model is to provide a semiconductor temperature difference power generation sheet, on the outer wall of the shell of the temperature difference power generation sheet, a right-angle sealing joint is installed, and the right-angle sealing joint is used to assist the positive and negative electrode leads to come out, so as to solve the problems raised in the above-mentioned background technology.

[0004] To achieve the above-mentioned purpose, the utility model provides the following technical solutions: a semiconductor thermoelectric power generation sheet, comprising a thermoelectric power generation sheet body and right-angle sealing joints installed on both sides of the surface of the thermoelectric power generation sheet body, the interiors of the two right-angle sealing joints are respectively installed with a positive lead and a negative lead electrically connected to the thermoelectric power generation sheet body, an upper heat conductive sheet is installed at the top of the thermoelectric power generation sheet body, the right-angle sealing joint comprises a right-angle joint fixed on both sides of the surface of the thermoelectric power generation sheet body, and an external threaded sleeve fixed at the top of the right-angle joint, one end of the surface of the positive lead and the negative lead is fixed with an internal thread head that matches the thread of the external threaded sleeve, and a double-layer bile ring is fixed on the inner wall of the external threaded sleeve, and the inner diameter of the double-layer bile ring is equal to the outer diameter of the positive lead and the negative lead.

[0005] Preferably, a sealing ring is fixed to one end of the surface of the positive electrode lead and the negative electrode lead, and one end of the sealing ring extends to the inside of the internal thread head.

[0006] Preferably, support feet are fixed at the corners of the thermoelectric power generation sheet body, and the support feet are made of copper.

[0007] Preferably, the thermoelectric power generation sheet body comprises an insulating ceramic shell installed at the bottom end of the upper heat conductive sheet, and an upper copper sheet and a lower copper sheet installed on the top wall and the bottom wall of the insulating ceramic shell, and an upper copper foil and a lower copper foil are installed on opposite sides of the upper copper sheet and the lower copper sheet.

[0008] Preferably, a plurality of N-type semiconductors and P-type semiconductors are alternately installed between the upper copper foil and the lower copper foil.

[0009] Preferably, the thickness of the bottom of the upper heat conducting plate is 5 mm to 15 mm.

[0010] Compared with the prior art, the beneficial effects of the utility model are as follows: the semiconductor thermoelectric power generation sheet can better fix the positive lead and the negative lead through the right-angle sealing joint, reduce the gap between the lead and the shell, thereby reducing the risk of heat loss, and the use of the right-angle sealing joint can better maintain the fixed position of the lead, reduce the possibility of being affected by the external environment, help to improve the stability and reliability of the thermoelectric power generation sheet in complex environments such as vibration and temperature changes, and extend its service life. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 This is a schematic diagram of the main structure of the utility model;

[0012] Figure 2 It is a schematic diagram of the top view structure of the utility model;

[0013] Figure 3 It is a schematic diagram of a partial cross-sectional structure of the utility model in a side view;

[0014] Figure 4 For this utility model Figure 2 The enlarged structural diagram at A in the middle;

[0015] In the figure: 1. Thermoelectric generator body; 101. Insulating ceramic shell; 102. Upper copper sheet; 103. Lower copper sheet; 104. Upper copper foil; 105. Lower copper foil; 106. N-type semiconductor; 107. P-type semiconductor; 2. Upper heat conductive sheet; 3. Support foot; 4. Right-angle sealing joint; 401. Right-angle joint; 402. External thread sleeve; 403. Internal thread head; 404. Double-layer bile ring; 5. Positive lead; 501. Sealing ring; 6. Negative lead. DETAILED DESCRIPTION

[0016] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0017] See also Figure 1-4 The utility model provides an embodiment: a semiconductor thermoelectric generator, the corner positions of the thermoelectric generator body 1 are all fixed with support feet 3, the support feet 3 are made of copper, including a thermoelectric generator body 1 and right-angle sealing joints 4 installed on both sides of the surface of the thermoelectric generator body 1, the positive lead 5 and the negative lead 6 electrically connected to the thermoelectric generator body 1 are installed inside the two right-angle sealing joints 4, and the top of the thermoelectric generator body 1 is installed with an upper heat conducting plate 2, the thickness of the upper heat conducting plate 2 is 5mm to 15mm, and the sufficient thickness of the upper heat conducting plate 2 can ensure its mechanical stability during use, and avoid deformation or damage due to being too thin;

[0018] The right-angle sealing joint 4 includes a right-angle joint 401 fixed on both sides of the surface of the thermoelectric power generation sheet body 1, and an external threaded sleeve 402 fixed on the top of the right-angle joint 401. An internal threaded head 403 threadedly matched with the external threaded sleeve 402 is fixed on one end of the surface of the positive lead 5 and the negative lead 6. A double-layer bile ring 404 is fixed on the inner wall of the external threaded sleeve 402. The inner diameter of the double-layer bile ring 404 is equal to the outer diameter of the positive lead 5 and the negative lead 6. The right-angle joint 401 is fixed on the outer wall of the thermoelectric power generation sheet body 1 for the positive lead 5 or the negative lead 6 to be routed and led out. The internal threaded head 403 and the external threaded sleeve 402 threadedly match to eliminate the gap between the positive lead 5 and the negative lead 6 and the right-angle joint 401, thereby effectively preventing the loss of heat energy;

[0019] The thermoelectric power generation sheet body 1 comprises an insulating ceramic shell 101 mounted at the bottom end of the upper heat conducting sheet 2, and an upper copper sheet 102 and a lower copper sheet 103 mounted on the top wall and the bottom wall of the insulating ceramic shell 101, an upper copper foil 104 and a lower copper foil 105 are mounted on opposite sides of the upper copper sheet 102 and the lower copper sheet 103, and a plurality of N-type semiconductors 106 and P-type semiconductors 107 are alternately mounted between the upper copper foil 104 and the lower copper foil 105 in sequence;

[0020] Under the action of temperature difference, a PN junction is formed at the contact of the N-type semiconductor 106 and the P-type semiconductor 107. When the temperature difference on both sides causes different concentrations of electrons and holes inside the semiconductor, charge diffusion will cause a potential difference to be formed at the PN junction. Due to the existence of the potential difference at the PN junction, carrier electrons and holes will flow in the semiconductor to form a current. The upper copper sheet 102, the lower copper sheet 103, the upper copper foil 104, and the lower copper foil 105 are connected to the N-type semiconductor 106 and the P-type semiconductor 107 as electrodes, thereby conducting the generated current.

[0021] A sealing ring 501 is fixed to one end of the surface of the positive lead 5 and the negative lead 6, and one end of the sealing ring 501 extends to the inside of the internal thread head 403. The double-layer bile ring 404 and the sealing ring 501 ensure that there will be no air leakage or heat leakage when the lead goes out, thereby protecting the heat energy and electric energy conversion efficiency inside the thermoelectric power generation sheet. The combined design of the right-angle joint 401, the double-layer bile ring 404, and the sealing ring 501 makes the lead more firmly fixed, reduces the gap between the lead and the shell joint, and reduces the possibility of being affected by the external environment.

[0022] When the embodiment of the present application is in use, first, the thermoelectric power generation chip body 1 is between two environments with different temperatures, for example, between a heat source and a cold source. Due to the heat conduction characteristics, a temperature difference will be formed on both sides of the thermoelectric power generation chip body 1. At this time, the current derived from the positive lead 5 and the negative lead 6 can be used to do work, such as driving electronic equipment, rechargeable batteries, etc., to achieve energy conversion. A right-angle sealing joint 4 is additionally provided at the connection between the positive lead 5, the negative lead 6 and the shell of the thermoelectric power generation chip body 1. The right-angle sealing joint 4 can better fix the positive lead 5 and the negative lead 6, reduce the gap between the lead and the shell, thereby reducing the risk of heat loss, and the use of the right-angle sealing joint 4 can better maintain the fixed position of the lead, reduce the possibility of being affected by the external environment, and help to improve the stability and reliability of the thermoelectric power generation chip in complex environments such as vibration and temperature changes, and extend its service life.

[0023] It is obvious to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the present invention can be implemented in other specific forms without departing from the spirit or essential features of the present invention. Therefore, the embodiments should be regarded as exemplary and non-restrictive from any point of view, and the scope of the present invention is defined by the appended claims rather than the above description, and it is intended that all changes falling within the meaning and scope of the equivalent elements of the claims be included in the present invention. Any reference numeral in a claim should not be regarded as limiting the claim to which it relates.

Claims

1. A semiconductor thermoelectric power generation sheet, characterized in that: The invention comprises a thermoelectric power generation chip body (1) and a right-angle sealing joint (4) installed on both sides of the surface of the thermoelectric power generation chip body (1); a positive electrode lead (5) and a negative electrode lead (6) electrically connected to the thermoelectric power generation chip body (1) are installed inside the two right-angle sealing joints (4) respectively; an upper heat conducting plate (2) is installed at the top of the thermoelectric power generation chip body (1); the right-angle sealing joint (4) comprises a right-angle joint (401) fixed on both sides of the surface of the thermoelectric power generation chip body (1) and an external thread sleeve (402) fixed at the top of the right-angle joint (401); an internal thread head (403) threadably matched with the external thread sleeve (402) is fixed on one end of the surface of the positive electrode lead (5) and the negative electrode lead (6); a double-layer bile ring (404) is fixed on the inner wall of the external thread sleeve (402); the inner diameter of the double-layer bile ring (404) is equal to the outer diameter of the positive electrode lead (5) and the negative electrode lead (6).

2. A semiconductor thermoelectric power generation sheet according to claim 1, characterized in that: A sealing ring (501) is fixed to one end of the surface of the positive electrode lead (5) and the negative electrode lead (6), and one end of the sealing ring (501) extends to the inside of the internal thread head (403).

3. The semiconductor thermoelectric power generation chip according to claim 1, characterized in that: Support legs (3) are fixed at the corner positions of the temperature difference power generation sheet body (1), and the support legs (3) are made of copper.

4. The semiconductor thermoelectric power generation chip according to claim 1, characterized in that: The thermoelectric power generation sheet body (1) comprises an insulating ceramic shell (101) mounted on the bottom end of an upper heat conducting sheet (2), and an upper copper sheet (102) and a lower copper sheet (103) mounted on the top wall and the bottom wall of the insulating ceramic shell (101); an upper copper foil (104) and a lower copper foil (105) are mounted on opposite sides of the upper copper sheet (102) and the lower copper sheet (103).

5. The semiconductor thermoelectric power generation chip according to claim 4, characterized in that: A plurality of N-type semiconductors (106) and P-type semiconductors (107) are alternately installed between the upper copper foil (104) and the lower copper foil (105).

6. The semiconductor thermoelectric power generation chip according to claim 1, characterized in that: The thickness of the bottom of the upper heat conducting plate (2) is 5 mm to 15 mm.

Images