Indium phosphide single crystal growth furnace capable of stably controlling temperature

Abstract

The utility model discloses an indium phosphide single crystal growth furnace with stable temperature control, relates to the technical field of single crystal growth furnace structures, and aims to solve the problem that the temperature control effect of the indium phosphide single crystal growth furnace is not good, so that the effect of the indium phosphide single crystal growth furnace is not good when the indium phosphide single crystal growth furnace grows indium phosphide. According to the technical scheme, the equipment box growth furnace comprises an equipment box growth furnace body, a supporting seat is arranged at the upper end of the growth furnace body, a fixing seat is mounted above the supporting seat, a mounting seat is arranged at the upper end of the fixing seat, a connecting seat is mounted above the mounting seat, and a mounting box is arranged at the lower end of the growth furnace body; an inert gas inlet seat is arranged at one end of the mounting box, an inert gas outlet seat is arranged at the other end of the mounting box, an upper furnace chamber is arranged at the upper end of the fixed seat, a lifting chamber is arranged in the upper furnace chamber, a mounting frame is mounted above the fixed seat, and a linear motor is mounted at the front end of the mounting frame.

Description

Technical Field

[0001] The utility model relates to the technical field of single crystal growth furnace structures, in particular to an indium phosphide single crystal growth furnace with stable temperature control. Background Art

[0002] Indium phosphide is an inorganic compound, a silver-grey single crystal, and is extremely soluble in inorganic acids. It is mainly used as a semiconductor material in fiber optic communication technology. The single crystal growth furnace controls the temperature of the thermal field and the crystal lifting speed to grow a single crystal column of a certain diameter. Finally, when most of the solution has completed crystallization, the crystal is gradually reduced to form a tail-shaped cone. In this way, the single crystal pulling process is basically completed and can be taken out after a certain amount of insulation and cooling.

[0003] The existing indium phosphide single crystal growth furnace has a poor temperature control effect, which makes the indium phosphide single crystal growth furnace poorly effective in growing indium phosphide, thereby affecting the quality of the prepared indium phosphide single crystal. Utility Model Content

[0004] The utility model aims to provide an indium phosphide single crystal growth furnace with stable temperature control, which can realize temperature control, thereby effectively improving the growth efficiency and quality of indium phosphide.

[0005] In order to achieve the above purpose, the utility model provides the following technical solutions:

[0006] A stable temperature-controlled indium phosphide single crystal growth furnace comprises an equipment box and a growth furnace body, a sealed door is installed at the front end of the growth furnace body, an opening handle is installed at the front end of the sealed door, a support seat is arranged at the upper end of the growth furnace body, a fixed seat is installed above the support seat, a graphite insulation board is installed at one end of the inner wall of the growth furnace body, a graphite heater is installed at one end of the inner wall of the graphite insulation board, a graphite crucible is installed inside the graphite heater, a mounting seat is arranged at the upper end of the fixed seat, a connecting seat is installed above the mounting seat, an installation box is arranged at the lower end of the growth furnace body, an inert gas inlet seat is arranged at one end of the installation box, an inert gas exhaust seat is arranged at the other end of the installation box, an upper furnace cavity is arranged at the upper end of the fixed seat, a lifting chamber is arranged inside the upper furnace cavity, a mounting frame is installed above the fixed seat, and a linear motor is installed at the front end of the mounting frame.

[0007] By adopting the above technical solution, the device can conveniently and effectively grow indium phosphide through a single crystal growth furnace.

[0008] Furthermore, a support frame is installed below the growth furnace body, and the support frame is welded to the growth furnace body. A stable base is installed below the support frame, and the stable base is welded to the support frame.

[0009] By adopting the above technical solution, the furnace body of the growth furnace can be stably supported.

[0010] Furthermore, the fixed seat and the supporting seat are fixedly connected by fixing screws, two connecting seats are provided, and the two connecting seats are symmetrical about the vertical center line of the fixed seat, a handle is installed on the upper end of the connecting seat, a connecting rod is provided at the lower end of the connecting seat, a stirring blade is provided at the lower end of the connecting rod, a stirring hole is provided inside the stirring blade, and the connecting seat and the fixed seat are fixedly connected by hexagonal screws.

[0011] By adopting the above technical solution, the solution inside the graphite crucible can be conveniently stirred when the graphite crucible is rotating, so that the temperature of the solution inside the graphite crucible is uniform.

[0012] Furthermore, a liquid inlet seat is arranged below one end of the outer wall of the growth furnace body, a liquid outlet seat is arranged above one end of the outer wall of the growth furnace body, and a spiral cooling pipe is arranged inside the inner wall of the growth furnace body, and the spiral cooling pipe is connected with the liquid outlet seat and the liquid inlet seat.

[0013] By adopting the above technical solution, the outer wall of the growth furnace body can be cooled, so that the temperature of the growth furnace body can be conveniently controlled.

[0014] Furthermore, a connecting and fixing seat is installed below the graphite crucible, a motor is installed inside the mounting box, a mounting plate is provided at the upper end of the motor, the mounting plate and the connecting and fixing seat are fixedly connected by fixing bolts, and the connecting and fixing seat and the graphite crucible are fixedly connected by fixing bolts.

[0015] By adopting the above technical solution, the graphite crucible can be rotated, which can improve the working efficiency.

[0016] Furthermore, connecting mounting seats are arranged around the linear motor, and the connecting mounting seats are fixedly connected to the mounting frame by fastening screws. A moving seat is installed at one end of the linear motor, and a lifting rod is installed on one side of the moving seat. One end of the lifting rod is located inside the upper furnace cavity, and a mounting fixing seat is installed at one end of the lifting rod. The mounting fixing seat and the moving seat are fixedly connected by mounting bolts.

[0017] By adopting the above technical solution, the linear motor can be controlled to enable the moving seat to drive the lifting rod to lift, thereby achieving the growth of indium phosphide single crystal.

[0018] 1. The utility model turns on the motor to make the connection fixing seat drive the graphite crucible to rotate, so that the graphite crucible can be heated evenly. When the graphite crucible rotates, the stirring blade can stir the solution inside the graphite crucible, so that the internal solution can be kept at the same temperature. When the temperature needs to be lowered, cooling water is introduced from the liquid inlet seat, so that the growth furnace body can be cooled, thereby conveniently controlling the temperature.

[0019] 2. The utility model places the raw materials into the graphite crucible and heats the graphite crucible by turning on the graphite heater, so that the crystal grows. By turning on the linear motor, the moving seat drives the lifting rod to move, so that the lifting rod can stretch the indium phosphide single crystal to grow. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 It is an overall three-dimensional diagram of the utility model;

[0021] Figure 2 This is a cross-sectional view of the equipment box of the utility model;

[0022] Figure 3 For this utility model Figure 1 A local enlarged view of point A;

[0023] Figure 4 For this utility model Figure 1 A partial enlarged view of point B.

[0024] In the figure: 1. Growth furnace body; 101. Support seat; 102. Liquid inlet seat; 103. Liquid outlet seat; 104. Inert gas inlet seat; 105. Inert gas outlet seat; 2. Support frame; 3. Stable base; 4. Sealed door; 5. Open handle; 6. Fixed seat; 601. Mounting seat; 7. Fixing screw; 8. Graphite insulation board; 9. Graphite heater; 10. Graphite crucible; 11. Spiral cooling tube; 12. Connecting seat; 13. hand; 14, connecting rod; 15, stirring blade; 1501, stirring hole; 16, hexagonal screw; 17, connecting fixed seat; 18, mounting box; 19, motor; 20, mounting plate; 21, fixing bolt; 22, mounting frame; 23, linear motor; 2301, connecting mounting seat; 24, fastening screw; 25, moving seat; 26, lifting rod; 27, mounting fixed seat; 28, mounting bolt; 29, upper furnace cavity; 2901, lifting chamber. DETAILED DESCRIPTION

[0025] The method of the utility model is further described in detail below in conjunction with the accompanying drawings.

[0026] Refer to the attached Figure 1 , Figure 2 ,and Figure 3A stable temperature-controlled indium phosphide single crystal growth furnace, comprising an equipment box growth furnace body 1, a sealing door 4 is installed at the front end of the growth furnace body 1, an opening handle 5 is installed at the front end of the sealing door 4, a support seat 101 is arranged at the upper end of the growth furnace body 1, a fixing seat 6 is installed above the support seat 101, a graphite insulation board 8 is installed at one end of the inner wall of the growth furnace body 1, a graphite heater 9 is installed at one end of the inner wall of the graphite insulation board 8, a graphite crucible 10 is installed inside the graphite heater 9, and a fixing seat 6 is installed at the upper end of the growth furnace body 1. The upper end of the fixed seat 6 is provided with a mounting seat 601, and the upper end of the mounting seat 601 is provided with a connecting seat 12, the lower end of the growth furnace body 1 is provided with a mounting box 18, one end of the mounting box 18 is provided with an inert gas inlet seat 104, and the other end of the mounting box 18 is provided with an inert gas exhaust seat 105, the upper end of the fixed seat 6 is provided with an upper furnace cavity 29, and the interior of the upper furnace cavity 29 is provided with a lifting chamber 2901, and the upper end of the fixed seat 6 is provided with a mounting frame 22, and the front end of the mounting frame 22 is provided with a linear motor 23. A support frame 2 is installed below the growth furnace body 1, and the support frame 2 is welded to the growth furnace body 1. A stable base 3 is installed below the support frame 2, and the stable base 3 is welded to the support frame 2. The fixed seat 6 is fixedly connected to the support seat 101 by fixing screws 7. Two connecting seats 12 are provided, and the two connecting seats 12 are symmetrical about the vertical center line of the fixed seat 6. A handle 13 is installed at the upper end of the connecting seat 12, and a connecting rod 14 is provided at the lower end of the connecting seat 12. A stirring blade 15 is provided at the lower end of the connecting rod 14, and a stirring hole 1501 is provided inside the stirring blade 15. The connecting seat 12 is fixedly connected to the fixed seat 6 by a hexagonal screw 16, wherein the support frame can support the device, and the installed stirring blade 15 can make the graphite crucible 10 rotate, and the stirring blade 15 can stir the solution inside the graphite crucible 10, so that the temperature of the solution inside the graphite crucible 10 is more uniform, which can improve the work efficiency.

[0027] Refer to the attached Figure 1 and Figure 2A liquid inlet seat 102 is arranged below one end of the outer wall of the growth furnace body 1, a liquid outlet seat 103 is arranged above one end of the outer wall of the growth furnace body 1, a spiral cooling pipe 11 is arranged inside the inner wall of the growth furnace body 1, and the spiral cooling pipe 11 is connected with the liquid outlet seat 103 and the liquid inlet seat 102, a connecting and fixing seat 17 is installed below the graphite crucible 10, a motor 19 is installed inside the mounting box 18, and a mounting plate 20 is arranged on the upper end of the motor 19, and a connecting and fixing seat 17 is connected between the mounting plate 20 and the connecting and fixing seat 17. The fixing bolts 21 are fixedly connected, and the connecting and fixing seat 17 and the graphite crucible 10 are fixedly connected by the fixing bolts 21, wherein the cooling liquid can be introduced through the arranged liquid inlet seat 102 and the liquid outlet seat 103, so that the furnace body 1 of the growth furnace can be cooled down, so that the temperature of the furnace body 1 of the growth furnace can be conveniently adjusted and controlled, and the connecting and fixing seat 17 can drive the graphite crucible 10 to rotate by turning on the installed motor 19, so that the graphite crucible 10 can be evenly heated.

[0028] Reference Figure 1 and Figure 4 A connecting mounting seat 2301 is arranged around the linear motor 23, and the connecting mounting seat 2301 is fixedly connected to the mounting frame 22 by fastening screws 24. A moving seat 25 is installed at one end of the linear motor 23, and a lifting rod 26 is installed on one side of the moving seat 25. One end of the lifting rod 26 is located inside the upper furnace chamber 29, and a mounting fixing seat 27 is installed at one end of the lifting rod 26. The mounting fixing seat 27 and the moving seat 25 are fixedly connected by mounting bolts 28, wherein the moving seat 25 can drive the lifting rod 26 to move through the linear motor 23, so that the lifting rod 26 can stretch the indium phosphide single crystal for growth.

[0029] Working principle: When in use, the raw materials are placed into the graphite crucible 10, and the graphite heater 9 is turned on to heat the graphite crucible 10, so that the crystal can grow. By turning on the linear motor 23, the movable seat 25 can drive the lifting rod 26 to move, so that the lifting rod 26 can stretch the indium phosphide single crystal to grow, and then the motor 19 is turned on to make the connecting fixed seat 17 drive the graphite crucible 10 to rotate, so that the graphite crucible 10 can be heated evenly. When the graphite crucible 10 rotates, the stirring blade 15 can stir the solution inside the graphite crucible 10, so that the internal solution can be kept at the same temperature. When cooling is required, cooling water is introduced from the liquid inlet seat 102, so that the growth furnace body 1 can be cooled, so that the temperature can be conveniently controlled.

[0030] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device.

[0031] Finally, it should be noted that the above description is only a preferred embodiment of the utility model and is not intended to limit the utility model. Although the utility model is described in detail with reference to the above embodiments, those skilled in the art can still modify the technical solutions recorded in the above embodiments or replace some of the technical features therein by equivalents. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the utility model shall be included in the protection scope of the utility model.

Claims

1. A stable temperature-controlled indium phosphide single crystal growth furnace, comprising an equipment box growth furnace body (1), characterized in that: A sealing door (4) is installed at the front end of the growth furnace body (1), and an opening handle (5) is installed at the front end of the sealing door (4). A support seat (101) is provided at the upper end of the growth furnace body (1), and a fixing seat (6) is installed above the support seat (101). A graphite insulation board (8) is installed at one end of the inner wall of the growth furnace body (1), and a graphite heater (9) is installed at one end of the inner wall of the graphite insulation board (8). A graphite crucible (10) is installed inside the graphite heater (9). A mounting seat (601) is provided at the upper end of the fixing seat (6). A connecting seat (12) is installed above the mounting seat (601), a mounting box (18) is provided at the lower end of the growth furnace body (1), an inert gas inlet seat (104) is provided at one end of the mounting box (18), an inert gas exhaust seat (105) is provided at the other end of the mounting box (18), an upper furnace chamber (29) is provided at the upper end of the fixed seat (6), a lifting chamber (2901) is provided inside the upper furnace chamber (29), a mounting frame (22) is installed above the fixed seat (6), and a linear motor (23) is installed at the front end of the mounting frame (22).

2. The indium phosphide single crystal growth furnace with stable temperature control according to claim 1, characterized in that: A support frame (2) is installed below the growth furnace body (1), and the support frame (2) is welded to the growth furnace body (1). A stable base (3) is installed below the support frame (2), and the stable base (3) is welded to the support frame (2).

3. The indium phosphide single crystal growth furnace with stable temperature control according to claim 1, characterized in that: The fixing seat (6) and the support seat (101) are fixedly connected by fixing screws (7); two connecting seats (12) are provided, and the two connecting seats (12) are symmetrical about the vertical center line of the fixing seat (6); a handle (13) is installed at the upper end of the connecting seat (12); a connecting rod (14) is provided at the lower end of the connecting seat (12); a stirring blade (15) is provided at the lower end of the connecting rod (14); a stirring hole (1501) is provided inside the stirring blade (15); and the connecting seat (12) and the fixing seat (6) are fixedly connected by hexagonal screws (16).

4. The indium phosphide single crystal growth furnace with stable temperature control according to claim 1, characterized in that: A liquid inlet seat (102) is arranged below one end of the outer wall of the growth furnace body (1), a liquid outlet seat (103) is arranged above one end of the outer wall of the growth furnace body (1), and a spiral cooling pipe (11) is arranged inside the inner wall of the growth furnace body (1), and the spiral cooling pipe (11) is connected to the liquid outlet seat (103) and the liquid inlet seat (102).

5. The indium phosphide single crystal growth furnace with stable temperature control according to claim 1, characterized in that: A connecting and fixing seat (17) is installed below the graphite crucible (10), a motor (19) is installed inside the installation box (18), a mounting plate (20) is provided at the upper end of the motor (19), the mounting plate (20) and the connecting and fixing seat (17) are fixedly connected by fixing bolts (21), and the connecting and fixing seat (17) and the graphite crucible (10) are fixedly connected by fixing bolts (21).

6. The indium phosphide single crystal growth furnace with stable temperature control according to claim 1, characterized in that: The linear motor (23) is provided with a connecting mounting seat (2301) around it, and the connecting mounting seat (2301) is fixedly connected to the mounting frame (22) by means of fastening screws (24). A moving seat (25) is installed at one end of the linear motor (23), and a lifting rod (26) is installed on one side of the moving seat (25). One end of the lifting rod (26) is located inside the upper furnace cavity (29), and a mounting fixing seat (27) is installed at one end of the lifting rod (26). The mounting fixing seat (27) and the moving seat (25) are fixedly connected by means of mounting bolts (28).

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