Radio frequency module

Abstract

The utility model relates to a radio frequency module. The radio frequency module provided by the embodiment of the utility model comprises a radio frequency switch circuit, two paths of uplink paths and two paths of downlink paths, the radio frequency switch circuit is configured to select one path from the two paths of uplink paths and the two paths of downlink paths for conduction so as to send signals through the uplink paths or receive signals through the downlink paths; the radio frequency switch circuit comprises a switch stack series-parallel structure; under the condition that the switch stack series-parallel structure comprises the switch stacks connected in series, the order number of the switch stacks connected in series is larger than the order number of other switch stacks. According to the embodiment of the invention, the isolation and linearity of the radio frequency module can be remarkably improved, and the insertion loss is reduced while the power capacity is improved.

Description

Technical Field

[0001] The present application relates to the field of electronic technology, and in particular to a radio frequency module. Background Art

[0002] Radio frequency modules are often used in electronic devices that transmit and receive signals (such as mobile communication electronic devices, etc.). Radio frequency modules can switch the transmit and receive channels through radio frequency switches. However, due to the poor switch isolation of current radio frequency switches, strict linearity requirements cannot be met during signal transmission, and the power capacity that can be tolerated is also low.

[0003] To this end, it is crucial to improve the linearity and power capacity of RF modules. In addition, in order to meet the current application requirements for multi-band communications, it is also crucial to design RF modules that can operate in multiple frequency bands. Utility Model Content

[0004] In view of this, an embodiment of the present application provides a radio frequency module to solve at least one problem existing in the background technology.

[0005] An embodiment of the present application provides a radio frequency module, the radio frequency module comprising a radio frequency switch circuit, two uplink paths and two downlink paths;

[0006] The RF switch circuit is configured to select one of the two uplink paths and the two downlink paths to be turned on, so as to send a signal through the uplink path or receive a signal through the downlink path; and the RF switch circuit includes a switch stack serial-parallel structure;

[0007] In the case where the switch stack serial-parallel structure includes switch stacks in series, the order of the switch stacks in series is greater than the order of other switch stacks.

[0008] In an optional implementation manner, the two uplink paths are respectively configured to send signals in different frequency bands; and / or

[0009] The two downlink paths are respectively configured to receive signals in different frequency bands.

[0010] In an optional implementation, the two uplink paths include a first uplink path and a second uplink path; the first uplink path is configured to send a first frequency band signal of 1980 MHz to 2010 MHz; the second uplink path is configured to send a second frequency band signal of 1668 MHz to 1675 MHz; and / or

[0011] The two downlink paths include a first downlink path and a second downlink path; the first downlink path is configured to receive a third frequency band signal of 2170MHz to 2200MHz; the second downlink path is configured to receive a fourth frequency band signal of 1518MHz to 1525MHz.

[0012] In an optional implementation, the switch stack serial-parallel structure includes at least one of a first serial-parallel structure and a second serial-parallel structure;

[0013] The first series-parallel structure includes a first series module and a first parallel module; the first series module is connected between the first signal transmission port and the second signal transmission port of the radio frequency switch circuit; the first parallel module is connected between the second signal transmission port and the ground terminal; the first series module is disconnected when one of the first parallel modules is turned on;

[0014] The second series-parallel structure includes a second series module, a second parallel module and a third parallel module; the second series module is connected between the first signal transmission port and the second signal transmission port of the RF switch circuit; the second parallel module is connected between the first signal transmission port and the ground terminal; the third parallel module is connected between the second signal transmission port and the ground terminal; the second series module is configured to be disconnected during the conduction period of the second parallel module and the third parallel module, and to be turned on during the disconnection period of the second parallel module and the third parallel module.

[0015] In an optional implementation, the first series module and the first parallel module both include a switch stack; and / or

[0016] The second series module, the second parallel module and the third parallel module each include a switch stack.

[0017] In an optional implementation, the radio frequency switch circuit includes a first transmission channel, a second transmission channel, a first receiving channel, and a second receiving channel in a switch stack serial-parallel structure;

[0018] The first transmission channel is configured to control the on / off of a first upstream path of the two upstream paths; the second transmission channel is configured to control the on / off of a second upstream path of the two upstream paths; the first receiving channel is configured to control the on / off of a first downstream path of the two downstream paths; the second receiving channel is configured to control the on / off of a second downstream path of the two downstream paths;

[0019] The switch stack of the first transmitting channel, the second transmitting channel, the series module of the first receiving channel and the second receiving channel, and the switch stack of the parallel module of the first transmitting channel and the second transmitting channel all have more orders than other switch stacks in each channel.

[0020] In an optional implementation, the series module of the first transmitting channel, the second transmitting channel, the first receiving channel, and the second receiving channel includes at least two switch stacks connected in parallel.

[0021] In an optional implementation, the parallel module of the first transmitting channel, the second transmitting channel, the first receiving channel, and the second receiving channel includes at least two switch stacks connected in parallel.

[0022] In an optional implementation manner, a first uplink path of the two uplink paths includes a first power amplifier and a first filter, so as to send a first frequency band signal via the first power amplifier, the first filter and the first sending channel;

[0023] The second uplink path of the two uplink paths comprises a second power amplifier and a second filter, so as to transmit a second frequency band signal via the second power amplifier, the second filter and the second transmission channel;

[0024] A first downlink path of the two downlink paths comprises a first low noise amplifier and a third filter, so as to receive a third frequency band signal via the first receiving channel, the first low noise amplifier and the third filter; and

[0025] The second downlink path of the two downlink paths includes a second low noise amplifier and a fourth filter, so as to receive a fourth frequency band signal via the second receiving channel, the second low noise amplifier and the fourth filter.

[0026] In an optional embodiment, at least one of the first filter, the second filter, the third filter and the fourth filter comprises a FBAR filter.

[0027] The beneficial effects brought by the technical solution provided by the embodiment of the present application include: through the serial-parallel structure of the switch stack of the RF switch circuit, the switch isolation of the RF switch circuit can be improved, thereby significantly increasing the isolation and linearity of the RF module to meet strict linearity requirements. And by configuring more orders for the series switch stack, the power capacity can be increased to meet the transmission requirements of high-power RF signals, while only slightly affecting the insertion loss, and the insertion loss is low. And by configuring two uplink paths and two downlink paths, the dual-band operation of the RF module is realized.

[0028] Additional aspects and advantages of the embodiments of the present application will be given in part in the description below and in part will become apparent from the description below or will be learned through the practice of the embodiments of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The drawings herein are incorporated into the specification and constitute a part of the specification, showing embodiments consistent with the present application, and together with the specification, are used to explain the principles of the present application. In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can also be obtained based on these drawings without creative work. These drawings and textual descriptions are not intended to limit the scope of the concept of the present application in any way, but to illustrate the concept of the present application for those skilled in the art by referring to specific embodiments. In the drawings:

[0030] Figure 1 A schematic diagram of a specific example of a radio frequency module in an embodiment of the present application;

[0031] Figure 2 A circuit diagram of a specific example of a switch stack in an embodiment of the present application;

[0032] Figure 3 A principle block diagram of a specific example of the first serial-parallel structure in the embodiment of the present application;

[0033] Figure 4 A principle block diagram of a specific example of the second serial-parallel structure in the embodiment of the present application;

[0034] Figure 5 is a principle block diagram of a specific example of a radio frequency switch circuit in an embodiment of the present application;

[0035] Figure 6 This is a circuit diagram of a specific example of a radio frequency module in an embodiment of the present application. DETAILED DESCRIPTION

[0036] In order to make the technical solutions and beneficial effects of the embodiments of the present application more obvious and easy to understand, the following is a detailed description by listing specific embodiments. Among them, the drawings are not necessarily drawn to scale, and local features may be enlarged or reduced to more clearly show the details of the local features; unless otherwise defined, the technical and scientific terms used herein have the same meaning as those in the technical field to which the embodiments of the present application belong.

[0037] It should be noted that the terms "first", "second", etc. may be used in this article to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish the first element from another element. When describing "first", it does not mean that there must be a "second"; and when discussing "second", it does not mean that there must be a "first" in this application. The singular forms of "one", "an" and "said / the" may also be intended to include plural forms, unless the context clearly indicates otherwise. The term "includes" is to determine the existence of the included features, but does not exclude the existence or addition of one or more other features. The term "and / or" includes any and all combinations of the relevant listed items. The term "plurality" means two or more.

[0038] The present application embodiment provides a radio frequency module, such as Figure 1 As shown, the RF module 100 includes a RF switch circuit 10, two uplink paths 20 and two downlink paths 30;

[0039] The RF switch circuit 10 is configured to select one of the two uplink paths 20 and the two downlink paths 30 to be turned on, so as to send a signal through the uplink path 20 or receive a signal through the downlink path 30; and the RF switch circuit 10 includes a switch stack serial-parallel structure;

[0040] In the case where the switch stack serial-parallel structure includes switch stacks in series, the order of the switch stacks in series is greater than the order of other switch stacks.

[0041] In the present application embodiment, Figure 2 As shown, the switch stack 01 can be mainly composed of multiple switch units 011 connected in series, that is, a transistor stacking method. By connecting multiple switch units 011 in series to form the switch stack 01, the large voltage swing to be carried can be distributed to the FET of each stacked switch unit 011, thereby significantly improving the switch power capacity and linearity.

[0042] As a specific example, the switch unit 011 may include an NMOS transistor (N-type metal oxide semiconductor field effect transistor), a gate bias resistor Rg, a body bias resistor Rb, and a drain-source linearization resistor Rds. The gate G of the NMOS transistor may be connected to the first end of the gate bias resistor Rg, the substrate B of the NMOS transistor may be connected to the first end of the body bias resistor Rb, and the source S and drain D of the NMOS transistor may be connected to each other through the drain-source linearization resistor Rds; the second end of the gate bias resistor Rg may be configured as an input gate bias voltage, and the second end of the body bias resistor Rb may be configured as an input body bias voltage. The source S of the NMOS transistor may be connected to the drain of the NMOS transistor of the previous-stage switch unit or configured to input a radio frequency signal, and the drain D of the NMOS transistor may be connected to the source of the NMOS transistor of the next-stage switch unit or configured to output a radio frequency signal. For example, the NMOS transistor may be Figure 2 The first NMOS transistor M1, the second NMOS transistor M2, the third NMOS transistor M3 or the fourth NMOS transistor M4 shown in FIG. The number of switch units 011 connected in series in the switch stack 01 can be used as the order of the switch stack 01.

[0043] In the embodiment of the present application, an NMOS transistor is used as the switch tube in the switch unit 011. Those skilled in the art should understand that the switch tube in the switch unit 011 may also adopt other controllable semiconductor switching devices, for example, it may include at least one of MOSFET (metal oxide semiconductor field effect transistor, MOS tube for short) and IGBT (insulated gate bipolar transistor) and other devices.

[0044] The embodiment of the present application can isolate the RF signal from the DC signal through the gate bias resistor Rg and the body bias resistor Rb, prevent the RF signal from leaking to the gate equivalent AC ground terminal, and reduce the RF loss; and can improve the voltage carrying capacity of the switch unit 011, such as the voltage carrying capacity can be increased by at least one time when the switch unit 011 is turned off, prevent the drain-gate junction of the NMOS transistor from being broken down too early, thereby improving the power capacity of the switch stack 01. And through the drain-source linearization resistor Rds, the DC potential of the drain and source ends can be stabilized, and the drain and source potential of the FET can be stabilized at the ground potential in the series-parallel switch structure, preventing the switch from generating a significant DC voltage drop in the drain and source during the switching process. The gate bias voltage and the body bias voltage are used to control the NMOS transistor to be turned on or off, thereby controlling the switch stack 01 to be turned on or off.

[0045] In an optional embodiment, the switch stack 01 may further include a gate common resistor Rgc and a body common resistor Rbc. The first end of the gate common resistor Rgc is configured to input a gate bias voltage, and the second end of the gate common resistor Rgc is respectively connected to the second end of the gate bias resistor Rg of each switch unit 011. The first end of the body common resistor Rbc is configured to input a body bias voltage, and the second end of the body common resistor Rbc is respectively connected to the second end of the body bias resistor Rb of each switch unit 011. The embodiment of the present application can further improve the power capacity of the switch stack 01 through the gate common resistor Rgc and the body common resistor Rbc.

[0046] The RF switch circuit 10 may be an SP4T switch and may include 4 channels. The RF switch circuit 10 includes a switch stack serial-parallel structure, and at least one channel in the RF switch circuit 10 may adopt a switch stack serial-parallel structure. The switch stack serial-parallel structure may include a series module and a parallel module, and may include a switch stack in the series module (i.e., a switch stack in series), or a switch stack in the parallel module (i.e., a switch stack in parallel), or a switch stack in both the series module and the parallel module. The switch stack serial-parallel structure is configured such that when the series module is in a closed state (equivalent to an on-resistance), the parallel module is in an open state (equivalent to a turn-off capacitor); conversely, when the series module is in an open state, the parallel module is in a closed state. In addition, for different channels, the switch stack 01 structure may be different to meet the different needs of each channel. And the higher the order of the switch stack, the higher the voltage it can withstand and the higher the power capacity.

[0047] The embodiment of the present application can improve the switch isolation of the RF switch circuit through the serial-parallel structure of the switch stack of the RF switch circuit, thereby significantly increasing the isolation and linearity of the RF module to meet strict linearity requirements. And by configuring more orders for the series switch stack, the power capacity can be increased to meet the transmission requirements of high-power RF signals, while only slightly affecting the insertion loss, and the insertion loss is low. And by configuring two uplink paths and two downlink paths, the dual-band operation of the RF module is achieved.

[0048] In an optional implementation manner, the two uplink paths 20 are respectively configured to send signals of different frequency bands; and / or

[0049] The two downlink paths 30 are respectively configured to receive signals in different frequency bands.

[0050] Different frequency bands can be configured according to actual needs. As a specific example, the two uplink paths include a first uplink path and a second uplink path; the first uplink path is configured to send a first frequency band signal (S band) of 1980MHz to 2010MHz; the second uplink path is configured to send a second frequency band signal (L band) of 1668MHz to 1675MHz; and / or

[0051] The two downlink paths include a first downlink path and a second downlink path; the first downlink path is configured to receive a third frequency band signal of 2170 MHz to 2200 MHz; the second downlink path is configured to receive a fourth frequency band signal of 1518 MHz to 1525 MHz.

[0052] In an optional embodiment, the switch stack serial-parallel structure includes at least one of a first serial-parallel structure and a second serial-parallel structure;

[0053] like Figure 3 As shown, the first series-parallel structure includes a first series module 11 and a first parallel module 12; the first series module 11 is connected between the first signal transmission port and the second signal transmission port of the RF switch circuit 10; the first parallel module 12 is connected between the second signal transmission port and the ground terminal; the first series module 11 is disconnected during the conduction period of one of the first parallel modules 12;

[0054] like Figure 4 As shown, the second series-parallel structure includes a second series module 13, a second parallel module 14 and a third parallel module 15; the second series module 13 is connected between the first signal transmission port and the second signal transmission port of the RF switch circuit 10; the second parallel module 14 is connected between the first signal transmission port and the ground terminal; the third parallel module 15 is connected between the second signal transmission port and the ground terminal; the second series module 13 is configured to be disconnected during the conduction period of the second parallel module 14 and the third parallel module 15, and to be turned on during the disconnection period of the second parallel module 14 and the third parallel module 15.

[0055] In the embodiment of the present application, the switch stack 01 is used in the switch stack serial-parallel structure of the RF switch circuit 10. For example, at least one of the first series module 11 and the first parallel module 12 may use the switch stack 01, and the module that does not use the switch stack 01 may use a controllable switch device to achieve controlled conduction or disconnection to achieve controllable transmission of the RF signal. For another example, at least one of the second series module 13, the second parallel module 14 and the third parallel module 15 may use the switch stack 01, and the module that does not use the switch stack 01 may use a controllable switch device to achieve controlled conduction or disconnection to achieve controllable transmission of the RF signal. The controllable switch device may include at least one of a BJT (transistor), an SCR (silicon controlled thyristor), a GTO (gate turn-off thyristor), a MOSFET (metal oxide semiconductor field effect transistor, referred to as MOS tube), an IGBT (insulated gate bipolar transistor), an MCT (MOS controlled thyristor) and a SIT (static induction transistor); for example, it may be a switch unit 011.

[0056] The first signal transmission port A1 may include the input and output port ANT0 of the RF switch circuit 10; the second signal transmission port A2 may include the first input port TX10, the second input port TX20, the first output port RX10 or the second output port RX20 of the RF switch circuit 10. Different channels are formed between these signal transmission ports, and the conduction of the switching channel realizes the transmission and switching of the RF signal. Through these channels, the RF signal can be transmitted between the input port and the input and output port or between the input and output port and the output port. Each channel can be composed of a first serial-parallel structure or a second serial-parallel structure. This structure can significantly increase the isolation of the RF switch while only slightly affecting the insertion loss.

[0057] In the first series-parallel structure, the first series module 11 is disconnected during the conduction period of another of the first parallel modules 12. The first parallel module 12 may be turned on when the first series module 11 is disconnected, and the first series module 11 may be turned on when the first parallel module 12 is disconnected. The conduction of the first series module 11 enables the transmission of the RF signal between the first signal transmission port A1 and the second signal transmission port A2. At this time, the first parallel module 12 is disconnected and will withstand the voltage of the transmitted RF signal. If the transmitted RF signal is a high-power RF signal, it will also withstand a high voltage. Therefore, if the first parallel module 12 includes a switch stack 01, the power capacity can be increased and the voltage that can be tolerated can be increased. The disconnection of the first series module 11 disconnects the transmission of the RF signal between the first signal transmission port A1 and the second signal transmission port A2. The disconnected first series module 11 will also withstand the voltage of the transmitted RF signal. Therefore, if the first series module 11 includes a switch stack 01, the power capacity can also be increased and the voltage that can be tolerated can be increased. At this time, the first parallel module 12 is turned on, so that the second signal transmission port A2 can be grounded, thereby significantly increasing the isolation of the RF switch and improving the linearity. In the second series-parallel structure, by using the second series module 13, the second parallel module 14 and the third parallel module 15, a π-type structure is formed, which can also improve the power capacity and the voltage that can be tolerated; and can significantly increase the isolation of the RF switch and improve the linearity. The principle is similar to that of the first series-parallel structure and will not be repeated here.

[0058] In an optional implementation, the first series module 11 and the first parallel module 12 both include a switch stack 01; and / or

[0059] The second series module 13 , the second parallel module 14 and the third parallel module 15 all include a switch stack 01 .

[0060] In the embodiment of the present application, the number of switch stacks 01 in the first series module 11, the first parallel module 12, the second series module 13, the second parallel module 14 and the third parallel module 15 can be set according to actual needs. For example, they can be more than two parallel switch stacks. Therefore, the power capacity and linearity can be improved, thereby improving the power capacity and linearity of the RF module as a whole. The more the number of switch tubes connected in series in the switch stack 01, that is, the higher the order, the higher the voltage it can withstand and the higher the power capacity. Therefore, in order to increase the power capacity, a higher-order switch stack can be used.

[0061] In an alternative embodiment, if Figure 5 As shown, the radio frequency switch circuit 10 includes a first transmitting channel, a second transmitting channel, a first receiving channel and a second receiving channel of a switch stack serial-parallel structure;

[0062] The first transmission channel is configured to control the on / off of the first uplink path of the two uplink paths; the second transmission channel is configured to control the on / off of the second uplink path of the two uplink paths; the first receiving channel is configured to control the on / off of the first downlink path of the two downlink paths; the second receiving channel is configured to control the on / off of the second downlink path of the two downlink paths;

[0063] The switch stacks of the first transmitting channel, the second transmitting channel, the series modules of the first receiving channel and the second receiving channel, and the switch stacks of the parallel modules of the first transmitting channel and the second transmitting channel all have more orders than other switch stacks in each channel.

[0064] In the embodiment of the present application, the first transmitting channel is used to connect the first input port TX10 and the input-output port ANT0; the second transmitting channel is used to connect the second input port TX20 and the input-output port ANT0; the first receiving channel is used to connect the input-output port ANT0 and the first output port RX10; the second receiving channel is used to connect the input-output port ANT0 and the second output port RX20.

[0065] The series modules of the first transmission channel, the second transmission channel, the first receiving channel and the second receiving channel can be series switch stacks T1, T2, T3 and T4 respectively; their parallel modules can be parallel switch stacks S1, S2, S3 and S4 respectively. A FET connected to the ground is connected in parallel to each branch arm, and the series FET and the parallel FET on the same branch arm use control voltages with opposite potentials. That is, when the first transmission channel, the second transmission channel, the first receiving channel or the second receiving channel is in the on state, the series switch stack can be on and the parallel switch stack can be off; when it is in the off state, the series switch stack can be off and the parallel switch stack can be on.

[0066] For example, if the first transmission channel connecting the first input port TX10 and the input-output port ANT0 is turned on, the first uplink path (port TX1 to ANT of the RF module 100) is turned on, T3, S1, S2, S4 are turned on, and S3, T1, T2, T4 are disconnected. Similarly, if the second transmission channel connecting the second input port TX20 and the input-output port ANT0 is turned on, the second uplink path (port TX2 to ANT of the RF module 100) is turned on, T4, S1, S2, S3 are turned on, and S4, T1, T2, T3 are disconnected. If the first receiving channel connecting the input-output port ANT0 and the first output port RX10 is turned on, the first downlink path (port ANT to RX1 of the RF module 100) is turned on, T1, S2, S3, S4 are turned on, and S1, T2, T3, T4 are disconnected. If the second receiving channel connecting the input-output port ANT0 and the second output port RX20 is turned on, the second downlink path (port ANT to RX2 of the RF module 100) is turned on, T2, S1, S3, S4 are turned on, and S2, T1, T3, T4 are turned off.

[0067] In the case where the first upstream path (or the second upstream path) needs to withstand higher power, when T3 (or T4) passes a high-power signal, the two ends of the turned-off T1, T2, T4, S3 (or T1, T2, T3, S4) will be subjected to high voltage. Therefore, T1, T2, T4, S3 require more switch stacks than T3, S1, S2, S4; similarly, T1, T2, T3, S4 require more switch stacks than T4, S1, S2, S3 to improve the ability to withstand high voltage.

[0068] Figure 5 The RF switch circuit using the first series-parallel structure is shown in FIG. Figure 5 The first serial-parallel structure can also be replaced by a second serial-parallel structure, and the RF switching circuit using the second serial-parallel structure has better switch isolation performance and the advantage of small insertion loss compared to the RF switching circuit using the first serial-parallel structure.

[0069] In an optional implementation, the series module of the first transmitting channel, the second transmitting channel, the first receiving channel, and the second receiving channel includes at least two switch stacks connected in parallel.

[0070] The parallel connection module of the first transmitting channel, the second transmitting channel, the first receiving channel and the second receiving channel includes at least two switch stacks connected in parallel.

[0071] In the embodiment of the present application, although the on-resistance can be reduced by increasing the width of the conductive channel in the NMOS transistor to reduce the insertion loss. However, it is not recommended to use a single NMOS transistor that is too wide. If the conductive channel of a single NMOS transistor is too wide, a voltage drop will also occur on its gate end, which is also undesirable. Therefore, by connecting multiple switch stacks in parallel, the total width can be increased, the insertion loss can be effectively reduced, and the defects caused by the excessive width of the conductive channel of a single NMOS transistor can be overcome.

[0072] The first downstream path (or the second downstream path) has a lower power requirement, but requires lower insertion loss. When T1 (or T2) is turned on, the two ends of the turned-off T2, T3, T4, S1 (or T1, T3, T4, S2) are subjected to a channel voltage drop. To reduce insertion loss, for example, T1, T2, T3, and T4 can use two parallel switch stacks with a width (the width of the conductive channel of the NMOS transistor, that is, the width in its width-to-length ratio) of 1.5 mm, that is, a total width of 3 mm. Of course, three or more parallel switches can also be used. Similarly, S1, S2, S3, and S4 can also use two or more parallel switch stacks.

[0073] In an alternative embodiment, if Figure 6 As shown, the first uplink path of the two uplink paths 20 includes a first power amplifier PA1 and a first filter Filter1, so as to transmit a first frequency band signal via the first power amplifier PA1, the first filter Filter1 and the first transmitting channel;

[0074] The second uplink path of the two uplink paths 20 includes a second power amplifier PA2 and a second filter Filter2, so as to transmit a second frequency band signal via the second power amplifier PA2, the second filter Filter2 and the second transmission channel;

[0075] The first downlink path of the two downlink paths 30 comprises a first low noise amplifier LNA1 and a third filter Filter3, so as to receive a third frequency band signal via a first receiving channel, the first low noise amplifier LNA1 and the third filter Filter3; and

[0076] The second downlink path of the two downlink paths 30 includes a second low noise amplifier LNA2 and a fourth filter Filter4 to receive a fourth frequency band signal via a second receiving channel, the second low noise amplifier LNA2 and the fourth filter Filter4.

[0077] In the embodiment of the present application, the first power amplifier PA1, the second power amplifier PA2, the first low noise amplifier LNA1, the second low noise amplifier LNA2, the first filter Filter1, the second filter Filter2, the third filter Filter3 and the fourth filter Filter4 can be configured according to actual needs. For example, the first low noise amplifier LNA1 and the second low noise amplifier LNA2 can both adopt a gain-adjustable low noise amplifier, which can include a logic control unit, a first-stage amplifier circuit, a second-stage amplifier circuit and a gain adjustment circuit. Among them, the first-stage amplifier circuit and the second-stage amplifier circuit can be used to perform two-stage amplification on the signal in sequence. The gain adjustment circuit can be used to attenuate the signal amplified by the two stages, and can include at least two gain adjustment units, and different gain adjustment units can include different gain gears. The logic control unit can be used to control the working state of the gain adjustment circuit to adjust the gain gear of the gain-adjustable low noise amplifier. Therefore, the gain adjustment range can be improved while meeting the high gain of the two-stage amplifier circuit.

[0078] In an optional implementation, at least one of the first filter Filter1, the second filter Filter2, the third filter Filter3 and the fourth filter Filter4 comprises an FBAR filter. Of course, SAW or other filters may also be used.

[0079] It should be understood that the above embodiments are exemplary and are not intended to include all possible implementations included in the claims. Various modifications and changes may be made on the basis of the above embodiments without departing from the scope of the present disclosure. Similarly, the various technical features of the above embodiments may be arbitrarily combined to form other embodiments of the present application that may not be explicitly described. Therefore, the above embodiments only express several implementations of the present application and do not limit the scope of protection of the patent of this application.

Claims

1. A radio frequency module, characterized in that: The radio frequency module includes a radio frequency switch circuit, two uplink paths and two downlink paths; The RF switch circuit is configured to select one of the two uplink paths and the two downlink paths to be turned on, so as to send a signal through the uplink path or receive a signal through the downlink path; and the RF switch circuit includes a switch stack serial-parallel structure; In the case where the switch stack serial-parallel structure includes switch stacks in series, the order of the switch stacks in series is greater than the order of other switch stacks.

2. The radio frequency module according to claim 1, characterized in that: The two uplink paths are respectively configured to send signals of different frequency bands; and / or The two downlink paths are respectively configured to receive signals of different frequency bands.

3. The radio frequency module according to claim 2, characterized in that: The two uplink paths include a first uplink path and a second uplink path; the first uplink path is configured to send a first frequency band signal of 1980 MHz to 2010 MHz; the second uplink path is configured to send a second frequency band signal of 1668 MHz to 1675 MHz; and / or The two downlink paths include a first downlink path and a second downlink path; the first downlink path is configured to receive a third frequency band signal of 2170MHz to 2200MHz; the second downlink path is configured to receive a fourth frequency band signal of 1518MHz to 1525MHz.

4. The radio frequency module according to any one of claims 1 to 3, characterized in that: The switch stack serial-parallel structure includes at least one of a first serial-parallel structure and a second serial-parallel structure; The first series-parallel structure includes a first series module and a first parallel module; the first series module is connected between the first signal transmission port and the second signal transmission port of the radio frequency switch circuit; the first parallel module is connected between the second signal transmission port and the ground terminal; the first series module is disconnected when one of the first parallel modules is turned on; The second series-parallel structure includes a second series module, a second parallel module and a third parallel module; the second series module is connected between the first signal transmission port and the second signal transmission port of the RF switch circuit; the second parallel module is connected between the first signal transmission port and the ground terminal; the third parallel module is connected between the second signal transmission port and the ground terminal; the second series module is configured to be disconnected during the conduction period of the second parallel module and the third parallel module, and to be turned on during the disconnection period of the second parallel module and the third parallel module.

5. The radio frequency module according to claim 4, characterized in that: The first series module and the first parallel module both include a switch stack; and / or The second series module, the second parallel module and the third parallel module each include a switch stack.

6. The radio frequency module according to claim 5, characterized in that: The radio frequency switch circuit includes a first transmission channel, a second transmission channel, a first receiving channel and a second receiving channel of a switch stack serial-parallel structure; The first transmission channel is configured to control the on / off of a first upstream path of the two upstream paths; the second transmission channel is configured to control the on / off of a second upstream path of the two upstream paths; the first receiving channel is configured to control the on / off of a first downstream path of the two downstream paths; the second receiving channel is configured to control the on / off of a second downstream path of the two downstream paths; The switch stack of the first transmitting channel, the second transmitting channel, the series module of the first receiving channel and the second receiving channel, and the switch stack of the parallel module of the first transmitting channel and the second transmitting channel all have more orders than other switch stacks in each channel.

7. The radio frequency module according to claim 6, characterized in that: The series module of the first transmitting channel, the second transmitting channel, the first receiving channel and the second receiving channel includes at least two switch stacks connected in parallel.

8. The radio frequency module according to claim 7, characterized in that: The parallel connection module of the first transmitting channel, the second transmitting channel, the first receiving channel and the second receiving channel includes at least two switch stacks connected in parallel.

9. The radio frequency module according to claim 8, characterized in that: The first uplink path of the two uplink paths comprises a first power amplifier and a first filter, so as to transmit a first frequency band signal via the first power amplifier, the first filter and the first transmission channel; The second uplink path of the two uplink paths comprises a second power amplifier and a second filter, so as to transmit a second frequency band signal via the second power amplifier, the second filter and the second transmission channel; The first downlink path of the two downlink paths comprises a first low noise amplifier and a third filter, so as to receive a third frequency band signal via the first receiving channel, the first low noise amplifier and the third filter; as well as The second downlink path of the two downlink paths includes a second low noise amplifier and a fourth filter, so as to receive a fourth frequency band signal via the second receiving channel, the second low noise amplifier and the fourth filter.

10. The radio frequency module according to claim 9, characterized in that: At least one of the first filter, the second filter, the third filter, and the fourth filter includes a FBAR filter.

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