Coating oxide cleaning device

Abstract

The utility model relates to a coating oxide cleaning device. The plating layer oxide cleaning device comprises a cleaning mechanism which comprises a cleaning tank, the cleaning tank is used for containing a cleaning agent, and the cleaning agent is used for cleaning a plating layer oxide in a semiconductor product; the washing mechanism comprises a washing tank, the washing tank is used for containing deionized water, and the deionized water is used for cleaning the cleaning agent left on the semiconductor product; the dehydrating mechanism comprises a dehydrating tank, the dehydrating tank is used for containing a dehydrating agent, and the dehydrating agent is used for removing the deionized water remaining on the semiconductor product; and the control mechanism is connected with the cleaning mechanism, the water washing mechanism and the dewatering mechanism, and the control mechanism is at least used for controlling the cleaning time of the semiconductor product in the cleaning tank. According to the utility model, the cleaning efficiency of the coating oxide can be improved, and the cleaning effect of the coating oxide can be improved.

Description

Technical Field

[0001] The utility model relates to the technical field of integrated circuit manufacturing, in particular to a coating oxide cleaning device. Background Art

[0002] In the semiconductor packaging process, it is usually necessary to perform tin plating on the substrate or chip. Under certain temperature and humidity conditions, the tin-plated layer in the tin-plated product will be oxidized and discolored when in contact with oxygen in the air. The oxidized tin-plated layer is mostly yellow or blue. When the thickness of the plating oxide layer formed by the oxidation of the tin-plated layer reaches a certain level, for example, when the thickness of the plating oxide layer is greater than 30nm, it will affect the normal welding function of the tin-plated layer.

[0003] In order to avoid affecting the welding process, the tinned layer is usually cleaned to remove the oxides in the coating. Currently, when cleaning the tinned layer, due to the use of a water washing process, water stains are easily left, and the remaining water stains will aggravate the oxidation of the tinned layer. Moreover, the current cleaning process is manual or semi-automatic, and the cleaning time cannot be accurately controlled, which is easy to cause incomplete cleaning (cleaning time is too short) or excessive corrosion (cleaning time is too long), affecting the cleaning effect.

[0004] Therefore, how to improve the cleaning effect of oxide coatings in semiconductor products, while improving the cleanliness after cleaning and avoiding excessive corrosion of the tin coating, is a technical problem that needs to be solved urgently. Summary of the invention

[0005] The utility model provides a coating oxide cleaning device, which is used for improving the cleaning cleanliness of semiconductor products while avoiding excessive corrosion of the coating, thereby improving the cleaning effect of the coating oxide in the semiconductor products.

[0006] According to some embodiments, the utility model provides a coating oxide cleaning device, comprising:

[0007] A cleaning mechanism, comprising a cleaning tank, the cleaning tank is used to contain a cleaning agent, the cleaning agent is used to clean the plating oxide in the semiconductor product;

[0008] A water washing mechanism, comprising a water washing tank, wherein the water washing tank is used to contain deionized water, and the deionized water is used to wash the cleaning agent remaining on the semiconductor product;

[0009] A dehydration mechanism, comprising a dehydration tank, wherein the dehydration tank is used to contain a dehydrating agent, and the dehydrating agent is used to remove the deionized water remaining on the semiconductor product;

[0010] A control mechanism is connected to the cleaning mechanism, the water washing mechanism and the dehydration mechanism, and the control mechanism is at least used to control the cleaning time of the semiconductor product in the cleaning tank.

[0011] In some embodiments, it also includes:

[0012] The drying mechanism comprises a drying tank for drying the semiconductor product after being dehydrated by the dehydration mechanism.

[0013] In some embodiments, the drying mechanism further comprises:

[0014] An air generator is located in the drying tank, and is used to generate hot air. The hot air is used to dry the semiconductor product after being dehydrated by the dehydration mechanism.

[0015] In some embodiments, it also includes:

[0016] A conveying mechanism is connected to the control mechanism and is used to convey the semiconductor product to the cleaning mechanism, the water washing mechanism, the dehydration mechanism and the drying mechanism.

[0017] In some embodiments, it also includes:

[0018] A loading mechanism, connected to the conveying mechanism, for receiving the semiconductor product from the outside;

[0019] The unloading mechanism is connected to the conveying mechanism and is used to output the cleaned semiconductor products to the outside.

[0020] In some embodiments, the control mechanism comprises:

[0021] A cleaning time sensor, located on the cleaning mechanism, the cleaning time sensor is used to detect the cleaning time of the semiconductor product in the cleaning tank as the actual cleaning time;

[0022] A controller is connected to the cleaning time sensor and the conveying mechanism, and is used to determine whether the actual cleaning time reaches a threshold cleaning time. If so, the controller controls the conveying mechanism to transfer the semiconductor product from the cleaning mechanism to the water washing mechanism.

[0023] In some embodiments, the control mechanism further comprises:

[0024] A water washing time sensor, located on the water washing mechanism, the water washing time sensor is used to detect the water washing time of the semiconductor product in the water washing tank as the actual water washing time;

[0025] The controller is connected to the water washing time sensor and is used to determine whether the actual water washing time reaches the threshold water washing time. If so, the controller controls the conveying mechanism to transfer the semiconductor product from the water washing mechanism to the dehydration mechanism.

[0026] In some embodiments, the cleaning mechanism further comprises:

[0027] A heater, located at the bottom of the cleaning tank, and used to heat the cleaning agent in the cleaning tank;

[0028] The temperature sensor is used to detect the temperature of the cleaning agent in the cleaning tank.

[0029] In some embodiments, the water washing mechanism further comprises:

[0030] A bubbler is located at the bottom of the water washing tank, and is used to stir the deionized water by bubbling.

[0031] In some embodiments, a water inlet pipe and a water outlet pipe are provided in the water washing tank to keep the deionized water overflowing.

[0032] In some embodiments, the coating oxide cleaning device also includes a processing chamber and an exhaust mechanism, the cleaning mechanism, the water washing mechanism and the dehydration mechanism are all located in the processing chamber, and the exhaust mechanism is used to exhaust the processing chamber.

[0033] In some embodiments, the dehydrating agent is an alcohol dehydrating agent.

[0034] The coating oxide cleaning device provided by the utility model is provided with a cleaning mechanism, a water washing mechanism, a dehydrating mechanism and a control mechanism, and uses the cleaning agent in the cleaning mechanism to clean the coating oxide on the semiconductor product, uses the deionized water in the water washing mechanism to clean the residual cleaning agent on the semiconductor product, and uses the dehydrating agent in the dehydrating mechanism to remove the residual deionized water on the semiconductor product, thereby achieving the cleaning and removal of the coating oxide on the semiconductor product, and avoiding affecting the welding performance of the semiconductor product. By providing the dehydrating mechanism, the subsequent drying time can be reduced, thereby further improving the cleaning efficiency of the coating oxide on the semiconductor product. By providing the control mechanism connected to the cleaning mechanism, the water washing mechanism and the dehydrating mechanism, it is helpful to improve the cleaning efficiency of the coating oxide in the semiconductor product. At the same time, the control mechanism is at least used to control the cleaning time of the semiconductor product in the cleaning tank, so as to avoid the problem of incomplete removal of the coating oxide due to the semiconductor product being cleaned in the cleaning tank for too short a time, and to avoid the problem of over-corrosion due to the semiconductor product being cleaned in the cleaning tank for too long a time, thereby improving the cleaning effect of the coating oxide in the semiconductor product. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Attached Figure 1 It is a schematic diagram of the structure of a coating oxide cleaning device in a specific embodiment of the present invention. DETAILED DESCRIPTION

[0036] The specific implementation of the coating oxide cleaning device provided by the utility model is described in detail below in conjunction with the accompanying drawings.

[0037] This specific embodiment provides a coating oxide cleaning device, Figure 1 Schematic diagram of the structure of the coating oxide cleaning device in a specific embodiment of the present invention. Figure 1 As shown, the coating oxide cleaning device comprises:

[0038] The cleaning mechanism includes a cleaning tank 10, wherein the cleaning tank 10 is used to contain a cleaning agent, and the cleaning agent is used to clean the plating oxide in the semiconductor product 16;

[0039] A water washing mechanism, comprising a water washing tank 11, wherein the water washing tank 11 is used to contain deionized water, and the deionized water is used to wash the cleaning agent remaining on the semiconductor product 16;

[0040] A dehydration mechanism, comprising a dehydration tank 12, wherein the dehydration tank 12 is used to contain a dehydrating agent, and the dehydrating agent is used to remove the deionized water remaining on the semiconductor product 16;

[0041] The control mechanism is connected to the cleaning mechanism, the water washing mechanism and the dehydration mechanism, and the control mechanism is at least used to control the cleaning time of the semiconductor product 16 in the cleaning tank 10.

[0042] Specifically, the semiconductor product 16 has a tin-plated layer, and the tin-plated layer is naturally oxidized due to contact with oxygen in the air to form the plating oxide. When the plating oxide cleaning device is used to clean the plating oxide on the semiconductor product 16, the semiconductor product 16 is first placed in the cleaning tank 10 of the cleaning mechanism, and the plating oxide is cleaned and removed by the chemical reaction between the cleaning agent in the cleaning tank 10 and the plating oxide. Then, the semiconductor product 16 cleaned in the cleaning tank 10 is transferred to the water washing tank 11 of the water washing mechanism, and the residual cleaning agent on the semiconductor product is removed by the deionized water in the water washing tank 11 to prevent the residual cleaning agent from corroding the semiconductor product 16 (for example, corroding the tin-plated layer on the semiconductor product 16). Afterwards, the washed semiconductor product 16 is transferred to the dehydration tank 12 in the dehydration mechanism, and the deionized water remaining on the semiconductor product 16 is removed by the dehydrating agent in the dehydration tank 12 to prevent the residual deionized water from oxidizing the tin-plated layer in the semiconductor product 16 again.

[0043] This specific embodiment uses the cleaning mechanism, the water washing mechanism and the dehydration mechanism to clean the semiconductor product in sequence, so that the coating oxide on the semiconductor product can be cleaned and removed, avoiding affecting the welding performance of the semiconductor product. By setting the dehydration mechanism, the semiconductor product washed by the water washing mechanism can be dehydrated to reduce the residual deionized water on the semiconductor product, which can not only shorten the time for subsequent drying of the semiconductor product and further improve the cleaning efficiency of the coating oxide, but also shorten the residence time of the deionized water on the semiconductor product, avoiding the residual deionized water from causing secondary corrosion to the tin coating. By setting the control mechanism connected to the cleaning mechanism, the water washing mechanism and the dehydration mechanism, it is helpful to improve the cleaning efficiency and automation of the coating oxide in the semiconductor product. At the same time, the control mechanism is at least used to control the cleaning time of the semiconductor product in the cleaning tank, so as to avoid the problem of incomplete removal of the coating oxide due to the semiconductor product being cleaned in the cleaning tank for too short a time, and to avoid the problem of over-corrosion due to the semiconductor product being cleaned in the cleaning tank for too long a time, thereby improving the cleaning effect of the coating oxide in the semiconductor product.

[0044] In one example, the water washing mechanism includes a plurality of the water washing tanks 11 , and the semiconductor product 16 is washed in the plurality of the water washing tanks 11 in turn, so as to more effectively remove the cleaning agent remaining on the semiconductor product 16 .

[0045] In some embodiments, the water washing tank 11 is provided with a water inlet pipe and a water outlet pipe to keep the deionized water overflowing, ensuring that the deionized water is running water, thereby ensuring that the product is fully cleaned. In some embodiments, the water inlet pipe is provided in the upper area of ​​the water washing tank 11, and the water outlet pipe is provided in the bottom area of ​​the water washing tank 11.

[0046] In some embodiments, the coating oxide cleaning device further comprises:

[0047] The drying mechanism includes a drying tank 13, which is used to dry the semiconductor product 16 after being dehydrated by the dehydration mechanism.

[0048] In some embodiments, the drying mechanism further comprises:

[0049] The air generator 26 is located in the drying tank 13. The air generator 26 is used to generate hot air. The hot air is used to dry the semiconductor product 16 after being dehydrated by the dehydration mechanism.

[0050] For example, after the air energy generator 26 installed in the drying tank 13 is turned on, it can transmit hot air into the drying tank 13 to dry the semiconductor product 16 in the drying tank 13 through the hot air. When cleaning the coating oxide on the semiconductor product 16, the semiconductor product 16 enters the drying tank 13 of the drying mechanism after being dehydrated by the dehydration mechanism. Since the semiconductor product 16 has been dehydrated in the dehydration mechanism, the residual deionized water on the semiconductor product 16 is reduced, thereby shortening the time for the drying mechanism to dry the semiconductor product 16, which helps to further improve the cleaning efficiency of the coating oxide.

[0051] In some embodiments, the coating oxide cleaning device further comprises:

[0052] The conveying mechanism 17 is connected to the control mechanism and is used to convey the semiconductor product 16 to the cleaning mechanism, the water washing mechanism, the dehydration mechanism and the drying mechanism.

[0053] For example, the conveying mechanism 17 is connected to the cleaning mechanism, the water washing mechanism, the dehydration mechanism and the drying mechanism. The conveying mechanism 17 can receive the control instructions transmitted by the control mechanism, and according to the control instructions, sequentially transmit the semiconductor product 16 to the cleaning mechanism, the water washing mechanism, the dehydration mechanism and the drying mechanism, thereby further improving the automation of the coating oxide cleaning device. Figure 1 The direction of the arrow in the figure may be the direction in which the conveying mechanism 17 conveys the semiconductor product 16. In one example, in order to further simplify the structure of the coating oxide cleaning device, the conveying mechanism 17 is a roller conveying mechanism.

[0054] In some embodiments, the coating oxide cleaning device further comprises:

[0055] A loading mechanism 18, connected to the conveying mechanism 17, for receiving the semiconductor product 16 from the outside;

[0056] The unloading mechanism 14 is connected to the conveying mechanism 17 and is used to output the cleaned semiconductor product 16 to the outside.

[0057] Specifically, after the semiconductor product 16 from the outside is transmitted to the loading mechanism 18, it is transferred to the conveying mechanism 17, and the conveying mechanism 17 sequentially transmits the semiconductor product to the cleaning mechanism, the water washing mechanism, the dehydration mechanism and the drying mechanism to complete the cleaning of the coating oxide. After the drying mechanism dries the semiconductor product, the conveying mechanism transmits the semiconductor product to the unloading mechanism 14, and the unloading mechanism transmits the semiconductor product to the outside. In one example, a machine signal light 19 is provided in both the loading mechanism 18 and the unloading mechanism 14, and the machine signal light 19 can be used to indicate the working state of the coating oxide cleaning device, and the working state may include a normal operating state, an idle state and an abnormal operating state (i.e., an alarm state).

[0058] In some embodiments, the control mechanism comprises:

[0059] A cleaning time sensor 22, located on the cleaning mechanism, the cleaning time sensor 22 is used to detect the cleaning time of the semiconductor product 16 in the cleaning tank 10 as the actual cleaning time;

[0060] The controller 20 is connected to the cleaning time sensor 22 and the conveying mechanism 17. The controller 20 is used to determine whether the actual cleaning time reaches the threshold cleaning time. If so, the controller 20 controls the conveying mechanism 17 to transfer the semiconductor product 16 from the cleaning mechanism to the water washing mechanism.

[0061] For example, the cleaning time sensor 22 may be located in the cleaning tank 10 in the cleaning mechanism. After detecting that the actual cleaning time of the semiconductor product 16 in the cleaning tank 10 reaches the preset threshold cleaning time, the cleaning time sensor 22 transmits a feedback signal to the controller 20 indicating that the threshold cleaning time has been reached. After receiving the feedback signal of the threshold cleaning time, the controller 20 controls the conveying mechanism 17 to transfer the semiconductor product 16 from the cleaning mechanism to the water washing mechanism, thereby objectively and accurately controlling the cleaning time of the semiconductor product 16 in the cleaning tank 10, while ensuring the cleaning effect, avoiding excessive corrosion of the semiconductor product 16 due to excessive cleaning time.

[0062] In some embodiments, the cleaning mechanism further comprises:

[0063] A heater, located at the bottom of the cleaning tank 10, and used to heat the cleaning agent in the cleaning tank 10;

[0064] The temperature sensor 23 is used to detect the temperature of the cleaning agent in the cleaning tank 10 .

[0065] Specifically, by providing the heater and the temperature sensor 23, the plating oxide on the semiconductor product can be cleaned with the cleaning agent at a constant temperature, thereby further improving the cleaning effect of the plating oxide.

[0066] In some embodiments, the control mechanism further comprises:

[0067] A water washing time sensor 24 is located on the water washing mechanism, and the water washing time sensor 24 is used to detect the water washing time of the semiconductor product 16 in the water washing tank 11 as the actual water washing time;

[0068] The controller 20 is connected to the washing time sensor 24 to determine whether the actual washing time reaches the threshold washing time. If so, the controller 20 controls the conveying mechanism 17 to transfer the semiconductor product 16 from the washing mechanism to the dehydration mechanism.

[0069] Specifically, the water washing time sensor 24 may be located in the water washing tank 11 in the water washing mechanism. After detecting that the actual water washing time of the semiconductor product 16 in the water washing tank 11 reaches the preset threshold water washing time, the water washing time sensor 24 transmits a feedback signal to the controller 20 indicating that the threshold water washing time has been reached. After receiving the feedback signal of the threshold water washing time, the controller 20 controls the conveying mechanism 17 to transfer the semiconductor product 16 from the water washing mechanism to the dehydration mechanism, thereby objectively and accurately controlling the water washing time of the semiconductor product 16 in the water washing tank 11, while ensuring the water washing effect, avoiding excessive corrosion of the tin-plated layer in the semiconductor product 16 due to excessive water washing time.

[0070] In one example, the control mechanism further includes a dehydration time sensor 25, which is located on the dehydration mechanism (for example, in the dehydration tank 12 in the dehydration mechanism), and is used to detect the dehydration time of the semiconductor product in the dehydration tank 12 as the actual dehydration time; the controller 20 is connected to the dehydration time sensor 25 to determine whether the actual dehydration time reaches the threshold dehydration time, and if so, controls the conveying mechanism 17 to transfer the semiconductor product from the dehydration mechanism to the drying mechanism. By setting the dehydration time sensor 25, the dehydration time of the semiconductor product 16 in the dehydration tank 12 can be objectively and accurately controlled, while ensuring the dehydration effect, avoiding the dehydration time being too long, which leads to a decrease in the cleaning efficiency of the coating oxide.

[0071] In another example, the control mechanism further includes a drying time sensor 27, which is located on the drying mechanism (for example, located in the drying tank 13 in the drying mechanism), and is used to detect the drying time of the semiconductor product 16 in the drying tank 13 as the actual drying time; the controller 20 is connected to the drying time sensor 27 to determine whether the actual drying time reaches the threshold drying time, and if so, controls the conveying mechanism 17 to transfer the semiconductor product from the drying mechanism to the unloading mechanism 14. By setting the drying time sensor 27, the drying time of the semiconductor product 16 in the drying tank 13 can be objectively and accurately controlled, while ensuring the drying effect, avoiding the drying time being too long, which leads to a decrease in the cleaning efficiency of the coating oxide.

[0072] In some embodiments, the water washing mechanism further comprises:

[0073] The bubbler 15 is located at the bottom of the water washing tank 11, and is used to stir the deionized water by bubbling.

[0074] Specifically, the water inlet and the water outlet are respectively provided on opposite sides of the water washing tank 11, so that the semiconductor product 16 can be washed with overflow running water to further improve the washing effect of the semiconductor product 16. The bubbler 15 is provided at the bottom of the water washing tank 11, so that the deionized water is bubbled and stirred by the bubbler 15, so as to better remove the cleaning agent remaining on the surface of the semiconductor product 16, so that the semiconductor product 16 is more fully washed.

[0075] In some embodiments, the dehydrating agent is an alcohol dehydrating agent, wherein the alcohol dehydrating agent may be alcohol or isopropanol. In one example, the dehydrating agent is alcohol with a concentration of 99.7%.

[0076] In one example, the coating oxide cleaning device also includes a processing chamber and an exhaust mechanism 21. The cleaning mechanism, the water washing mechanism and the dehydration mechanism are all located in the processing chamber. The exhaust mechanism 21 is used to perform exhaust treatment on the processing chamber to extract volatile gases of organic volatile solvents such as cleaning agents in the processing chamber to avoid polluting the environment.

[0077] The coating oxide cleaning device provided in this specific embodiment is provided with a cleaning mechanism, a water washing mechanism, a dehydrating mechanism and a control mechanism, and uses the cleaning agent in the cleaning mechanism to clean the coating oxide on the semiconductor product, uses the deionized water in the water washing mechanism to clean the residual cleaning agent on the semiconductor product, and uses the dehydrating agent in the dehydrating mechanism to remove the residual deionized water on the semiconductor product, thereby achieving the cleaning and removal of the coating oxide on the semiconductor product, and avoiding affecting the welding performance of the semiconductor product. By providing the control mechanism connected to the cleaning mechanism, the water washing mechanism and the dehydrating mechanism, it is helpful to improve the cleaning efficiency of the coating oxide in the semiconductor product. By providing the dehydrating mechanism, the subsequent drying time can be reduced, thereby further improving the cleaning efficiency of the coating oxide on the semiconductor product. At the same time, the control mechanism is at least used to control the cleaning time of the semiconductor product in the cleaning tank, so as to avoid the problem of incomplete removal of the coating oxide due to the semiconductor product being cleaned in the cleaning tank for too short a time, and to avoid the problem of over-corrosion due to the semiconductor product being cleaned in the cleaning tank for too long a time, thereby improving the cleaning effect of the coating oxide in the semiconductor product.

[0078] The above is only a preferred embodiment of the present invention. It should be pointed out that ordinary technicians in this technical field can make several improvements and modifications without departing from the principle of the present invention. These improvements and modifications should also be regarded as the protection scope of the present invention.

Claims

1. A coating oxide cleaning device, characterized in that: include: A cleaning mechanism, comprising a cleaning tank, the cleaning tank is used to contain a cleaning agent, the cleaning agent is used to clean the plating oxide in the semiconductor product; A water washing mechanism, comprising a water washing tank, wherein the water washing tank is used to contain deionized water, and the deionized water is used to wash the cleaning agent remaining on the semiconductor product; A dehydration mechanism, comprising a dehydration tank, wherein the dehydration tank is used to contain a dehydrating agent, and the dehydrating agent is used to remove the deionized water remaining on the semiconductor product; A control mechanism is connected to the cleaning mechanism, the water washing mechanism and the dehydration mechanism, and the control mechanism is at least used to control the cleaning time of the semiconductor product in the cleaning tank.

2. The coating oxide cleaning device according to claim 1, characterized in that: Also includes: The drying mechanism comprises a drying tank for drying the semiconductor product after being dehydrated by the dehydration mechanism.

3. The coating oxide cleaning device according to claim 2, characterized in that: The drying mechanism also includes: An air generator is located in the drying tank, and is used to generate hot air. The hot air is used to dry the semiconductor product after being dehydrated by the dehydration mechanism.

4. The coating oxide cleaning device according to claim 2, characterized in that: Also includes: The conveying mechanism is connected to the control mechanism and is used to convey the semiconductor product to the cleaning mechanism, the water washing mechanism, the dehydration mechanism and the drying mechanism.

5. The coating oxide cleaning device according to claim 4, characterized in that: Also includes: A loading mechanism, connected to the conveying mechanism, for receiving the semiconductor product from the outside; The unloading mechanism is connected to the conveying mechanism and is used to output the cleaned semiconductor products to the outside.

6. The coating oxide cleaning device according to claim 4, characterized in that: The control mechanism comprises: A cleaning time sensor, located on the cleaning mechanism, the cleaning time sensor is used to detect the cleaning time of the semiconductor product in the cleaning tank as the actual cleaning time; A controller is connected to the cleaning time sensor and the conveying mechanism, and is used to determine whether the actual cleaning time reaches a threshold cleaning time. If so, the controller controls the conveying mechanism to transfer the semiconductor product from the cleaning mechanism to the water washing mechanism.

7. The coating oxide cleaning device according to claim 6, characterized in that: The control mechanism also includes: A water washing time sensor, located on the water washing mechanism, the water washing time sensor is used to detect the water washing time of the semiconductor product in the water washing tank as the actual water washing time; The controller is connected to the water washing time sensor and is used to determine whether the actual water washing time reaches the threshold water washing time. If so, the controller controls the conveying mechanism to transfer the semiconductor product from the water washing mechanism to the dehydration mechanism.

8. The coating oxide cleaning device according to claim 1, characterized in that: The cleaning mechanism also includes: A heater, located at the bottom of the cleaning tank, and used to heat the cleaning agent in the cleaning tank; The temperature sensor is used to detect the temperature of the cleaning agent in the cleaning tank.

9. The coating oxide cleaning device according to claim 1, characterized in that: The water washing mechanism also includes: A bubbler is located at the bottom of the water washing tank, and is used to stir the deionized water by bubbling.

10. The coating oxide cleaning device according to claim 1, characterized in that: The water washing tank is provided with a water inlet pipe and a water outlet pipe to keep the deionized water overflowing.

11. The coating oxide cleaning device according to claim 1, characterized in that: The coating oxide cleaning device also includes a processing chamber and an exhaust mechanism. The cleaning mechanism, the water washing mechanism and the dehydration mechanism are all located in the processing chamber. The exhaust mechanism is used to perform exhaust treatment on the processing chamber.

12. The coating oxide cleaning device according to claim 1, characterized in that: The dehydrating agent is an alcohol dehydrating agent.

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