Power device packaging structure

Abstract

The utility model provides a power device packaging structure. The power device packaging structure comprises a power chip, power heat dissipation pins and a plastic package body, the power chip is electrically connected with the first end of the power heat dissipation pin in a contact manner and is sealed by the plastic package body; the second end of the power heat dissipation pin is exposed out of the plastic package body and is used for external electrical connection and heat dissipation of the power chip. According to the packaging structure provided by the utility model, the power heat dissipation pin is directly connected with the power chip, and when a device works, heat is directly dissipated through the power heat dissipation pin, so that the heat dissipation performance of the device is improved; according to the packaging structure, the power chip is electrically connected with the first end of the power heat dissipation pin in a contact (fitting) mode, the technical problem that in the prior art, a TO single-tube power chip and the pin are connected through a bonding wire, so that the technology is tedious is solved, the technology and equipment are saved, and the device production cost is reduced.

Description

Technical Field

[0001] The utility model belongs to the field of power semiconductors, and in particular relates to a power device packaging structure. Background Art

[0002] Transistor Outline (TO) packaging technology is a fully enclosed packaging technology and a commonly used packaging method for power devices. Existing TO single-tube packages, such as TO-247, TO-264, TO-220 and other packaging forms of single-tube devices, are all chip packaging forms with metal heat dissipation backplanes as carriers, and the pins are electrically connected to the chip through power bonding wires. The process is cumbersome and the heat dissipation is poor, which limits its application in higher performance power device packaging.

[0003] In addition, the power pins used in traditional TO single-tube power devices are all upright structures. When this structure is used on a terminal PCB board, the power pins are usually directly plugged into the PCB board. Due to the diverse and complex working environment of the power device, the power pins are easily damaged. At the same time, soldering is required during installation and fixing, which is costly. Utility Model Content

[0004] In view of the deficiencies in the prior art, the utility model provides a power device packaging structure to solve the technical problems of complicated process and poor heat dissipation caused by the use of bonding wires to connect the chip and pins of the prior art TO single-tube power chip.

[0005] To achieve the above-mentioned purpose, the power device packaging structure provided by the utility model includes:

[0006] Power chip, power heat sink pins and plastic package;

[0007] The power chip is electrically connected to the first end of the power heat dissipation pin in contact mode and is sealed by the plastic package; the second end of the power heat dissipation pin is exposed outside the plastic package for external electrical connection and heat dissipation of the power chip.

[0008] In some embodiments, the power heat sink pin is an L-shaped wide piece.

[0009] In some embodiments, the power chip includes an IGBT chip and an FRD chip, the collector of the IGBT chip is electrically connected to the first contact surface of the FRD chip, and the emitter of the IGBT chip is electrically connected to the second contact surface of the FRD chip; the power heat dissipation pin includes a C-pole power pin electrically connected to the collector of the IGBT chip, a G-pole control pin electrically connected to the gate of the IGBT chip, and an E-pole power pin electrically connected to the emitter of the IGBT chip.

[0010] In some implementations, the IGBT chip and the FRD chip are located between the C-pole power pin and the E-pole power pin.

[0011] In some embodiments, the thickness H of the plastic package body satisfies the following relationship:

[0012] H≥

[0013] H1+

[0014] H2++

[0015] H3

[0016] , where H1 is the thickness of the C-pole power pin, H2 is the thickness of the E-pole power pin, and H3 is the thickness of the IGBT chip.

[0017] In some implementations, the IGBT chip and the power heat sink pins are welded together by solder.

[0018] In some embodiments, the power chip includes a MOSFET chip, and the power heat dissipation pin includes an S-pole power pin electrically connected to the source of the MOSFET chip, a D-pole power pin electrically connected to the drain of the MOSFET chip, and a G'-pole control pin electrically connected to the gate of the MOSFET chip.

[0019] In some implementations, the MOSFET chip and the power heat sink pins are soldered together.

[0020] In some embodiments, the thickness L of the plastic package body satisfies the following relationship:

[0021] L≥

[0022] L1+

[0023] L2+

[0024] L3

[0025] , where L1 is the thickness of the S-pole power pin, L2 is the thickness of the D-pole power pin, and L3 is the thickness of the MOSFET chip.

[0026] In some embodiments, the plastic packaging body is formed of an epoxy resin plastic packaging body or a hard silicone gel, and has a thickness of 1.5 mm to 3 mm.

[0027] Compared with the prior art, implementing any of the above technical solutions of the utility model has at least the following advantages or beneficial effects:

[0028] 1) The power heat dissipation pins of the packaging structure provided by the utility model are directly connected to the power chip. When the device is working, the heat is directly dissipated through the power heat dissipation pins, thereby improving the heat dissipation performance of the device.

[0029] 2) The first end contact (bonding) electrical connection between the power chip and the power heat dissipation pin of this packaging structure solves the technical problem of the cumbersome process caused by the bonding wire connection between the chip and the pin of the T0 single-tube power chip in the prior art, saves process and equipment, and reduces the production cost of the device.

[0030] 3) The power heat dissipation pins of this package structure adopt L-shaped wide pieces, which increases the heat transfer area of ​​the device and further improves the heat dissipation performance of the device; and the L-shaped pins can be directly buckled and fitted on the corresponding position of the PCB board without the need for soldering and fixing, saving costs. At the same time, the fitting installation method is more stable than the upright plug-in method. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to more clearly illustrate the technical solution of the utility model and facilitate further understanding of the technical effects, technical features and purposes of the utility model, the utility model is described in detail below in conjunction with the accompanying drawings. The accompanying drawings constitute an essential part of the specification and are used together with the embodiments of the utility model to illustrate the technical solution of the utility model, but do not constitute a limitation to the utility model.

[0032] Figure 1 This is the internal schematic diagram of the device when the power device chip of the utility model adopts IGBT and FRD;

[0033] Figure 2 This is a schematic diagram of the internal structure of the device when the power device chip of the utility model adopts IGBT and FRD and the thickness of the plastic package is 1.5mm;

[0034] Figure 3 This is a schematic diagram of the internal structure of the device when the power device chip of the utility model adopts IGBT and FRD and the thickness of the plastic package is 3mm;

[0035] Figure 4 This is a schematic diagram of the internal structure of the device when the power device of the utility model adopts MOSFET;

[0036] Figure 5This is a schematic diagram of the internal structure of the device when the power device chip of the utility model adopts MOSFET and the thickness of the plastic package is 1.5mm;

[0037] Figure 6 This is a schematic diagram of the internal structure of the device when the power device chip of the utility model adopts MOSFET and the thickness of the plastic package is 3mm;

[0038] Figure 7 This is a schematic diagram of the front structure of the power device of the utility model;

[0039] Figure 8 This is a schematic diagram of the back structure of the power device of the utility model;

[0040] Fig. 9 This is a schematic diagram of the utility model when the thickness of the plastic package of the power device is 3mm;

[0041] Fig.10 This is a schematic diagram of the power device of the utility model when the thickness of the plastic package body is 1.5 mm.

[0042] In the figure: 1. Plastic package; 2. First mounting hole; 3. Auxiliary crimping half groove; 4. Second mounting hole; 5. E-pole power pin; 6. C-pole power pin; 7. G-pole control pin; 8. G'-pole control pin; 9. D-pole power pin; 10. S-pole power pin; 11. IGBT chip; 12. FRD chip; 13. MOSFET chip. DETAILED DESCRIPTION

[0043] The embodiments of the utility model are described in detail below, and examples of the embodiments are shown in the accompanying drawings. The exemplary embodiments can be implemented in various forms and should not be understood as being limited to the examples set forth herein; on the contrary, these embodiments are provided so that the utility model will be more comprehensive and complete, and the concept of the exemplary embodiments will be fully conveyed to those skilled in the art. The same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the utility model, and should not be understood as limiting the utility model.

[0044] In the description of the present utility model, it should be noted that, unless otherwise clearly specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two components, etc. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0045] The power device packaging structure provided by the utility model includes: a power chip, a power heat dissipation pin and a plastic package 1; the power chip is electrically connected to the first end of the power heat dissipation pin in a contact manner and is sealed by the plastic package; the second end of the power heat dissipation pin is exposed outside the plastic package for external electrical connection and heat dissipation of the power chip. Its specific structure is described in detail through the following implementation methods.

[0046] Example 1

[0047] like Figures 1 to 3 As shown, the power chip of the power device packaging structure provided in this embodiment is configured to include an IGBT chip 11 and an FRD chip 12, and the power heat dissipation pins are configured to include a C-pole power pin 6 electrically connected to the collector of the IGBT chip 11, a G-pole control pin 7 electrically connected to the gate of the IGBT chip 11, and an E-pole power pin 5 electrically connected to the emitter of the IGBT chip 11.

[0048] The IGBT chip 11 and the FRD chip 12 are located between the C-pole power pin 6 and the E-pole power pin 5. The collector of the IGBT chip 11 is electrically connected to the first contact surface of the FRD chip 12, and the emitter of the IGBT chip 11 is electrically connected to the second contact surface of the FRD chip 12. The first and second contact surfaces of the FRD chip 12 are the cathode and anode of the FRD chip 12. The FRD chip 12 is connected in parallel with the collector and emitter of the IGBT chip 11 to constitute the freewheeling of the IGBT chip 11, which plays a role in freewheeling protection to prevent the IGBT chip 11 from being damaged due to reverse voltage when the power device is turned off.

[0049] The first contact surface of the FRD chip 12 is coplanar with the collector of the IGBT chip 11 , and the second contact surface of the FRD chip 12 is coplanar with the emitter of the IGBT chip 11 ; the coplanar description means being in contact.

[0050] In this embodiment, the G-pole control pin 7, the C-pole power pin 6, and the E-pole power pin 5 are configured in a sheet shape, and the three have the same thickness to ensure the stability of the power chip; it can be understood that, under the premise of ensuring the stability of the device, the thickness of the G-pole control pin 7, the C-pole power pin 6, and the E-pole power pin 5 can also be different.

[0051] The power heat dissipation pins are configured in a sheet shape to increase the contact area between the pins and the power chip, ensure the contact stability between the pins and the power chip, and effectively increase the heat transfer area of ​​the power chip. According to Fourier's law Q = -kAΔT / Δx (Q represents conducted heat, k represents thermal conductivity, A represents heat transfer area, ΔT represents temperature difference, and Δx represents heat transfer distance), this embodiment uses sheet-shaped power heat dissipation pins to directly transmit and dissipate power, thereby increasing the heat transfer area A of the power chip when it is working, and reducing and dissipating more heat Q per unit time; moreover, the power heat dissipation pins are directly connected to the power chip, avoiding the traditional ultrasonic bonding process, reducing power loss while reducing the production cost of the device.

[0052] Exemplarily, the IGBT chip 11 adopts an IGBT power chip with a width of 7.93 mm developed by our company, the width of the FRD chip 12 is the same as the width of the IGBT chip 11, the width of the E-pole power pin 5 is 0.5 mm to 5.5 mm, and the width of the G-pole control pin 6 does not exceed the width of the gate of the IGBT chip 11, which is preferably 0.66 mm in this embodiment; the width of the E-pole power pin 5 is greater than the chip width of the IGBT chip 11, but must not exceed the width of the plastic package 1 and cannot be connected to the G-pole control pin 7.

[0053] As shown in Table 1, a power device with a C-pole power pin 6 width of 9 mm, a G-pole power pin 7 width of 0.66 mm, an E-pole power pin 5 width of 0.5 mm to 5.5 mm, and a plastic package 1 thickness of 1.5 mm, is compared with a single tube in the existing power bonding lead TO-247 package form after working for 1 hour at a platform of 1200V / 350A as follows:

[0054] Table 1 Comparison of heat dissipation between this embodiment and the prior art

[0055]

[0056]

[0057] In this embodiment, when the width of the E-pole power pin 5 exceeds 5.5 mm, it will contact the gate of the IGBT chip 11, causing the power chip to fail to work normally. Therefore, the width of the E-pole power pin 5 needs to be less than or equal to the difference between the total width of the IGBT power chip and its gate width.

[0058] like Figure 2 , Figure 3As shown, the thickness of the plastic package 1 is preferably 1.5mm to 3mm. The thickness of the plastic package of the TO power single tube device also has a certain influence on the heat dissipation of the device. In the aforementioned implementation mode, a suitable thickness of the plastic package 1 is selected, and the thickness of the plastic package 1 should be greater than or equal to the sum of the thicknesses of the C pole power pin 6, the E pole power pin 5 and the IGBT chip 11. As shown in Table 2, in a power device with a G pole control pin 7 width of 0.66mm, a C pole power pin 6 width of 9mm, and an E pole power pin 5 width of 7mm, after working for 1h at a power platform of 1200V / 350A, the change in the width of the plastic package 1 has a comparison of the heat dissipation performance of the device as follows:

[0059] Table 2 Heat dissipation performance of devices with different thicknesses of plastic packages

[0060] The thickness of the plastic package in this embodiment 1.5mm 2mm 2.5mm 3mm 3.5mm 4mm The heat dissipation time of the device in this embodiment 11min 12min 14min 16min 20min 25min

[0061] Also based on Fourier's law Q = -kAΔT / Δx, when the thickness of the device plastic package 1 gradually increases, as the heat transfer distance Δx gradually increases, the temperature Q that is reduced and dissipated will be less, and the heat dissipation time required by the device will be longer. In this embodiment, when the thickness of the plastic package 1 is equal to 1.5mm, at this time, the power device of this embodiment realizes double-sided heat dissipation, and the side of the C-pole power pin 6 and the E-pole power pin 5 that is not connected to the IGBT chip 11 is just plastic-encapsulated by the plastic package 1 in the horizontal direction. At this time, the heat dissipation performance of the C-pole power pin 6 and the E-pole power pin 5 reaches the best, and the heat dissipation effect is the best. At this time, the device can be suitable for higher power application scenarios. When the thickness of the plastic package 1 is greater than 3mm, the overall heat dissipation performance of the device is significantly reduced, but the plastic package 1 can still be thickened according to actual needs. For example, in some low-power (100-300W) application scenarios, in order to extend the service life of the device and improve the safety performance of the device, the thickness of the plastic package 1 is often set at 5-7mm.

[0062] In order to make the power device provided in this embodiment more firm and stable on the corresponding PCB circuit board, the power heat dissipation pin of this embodiment is configured as an L-shaped sheet pin, and the first end is electrically connected to the power chip in a contact manner (the contact electrical connection is a direct fit between the pin and the power chip to achieve a connection between the two, as shown in the figure); the second end of the power heat dissipation pin is located outside the plastic package 1 to achieve a close fit connection between the power device and the PCB circuit board, so that the power device is stably connected on the PCB and is not easily damaged, thereby enhancing the reliability of the device.

[0063] Exemplarily, the power device of this embodiment can also be equipped with a first mounting hole 2, a second mounting hole 4, and an auxiliary crimping half groove 3 for further fixation, so that the power device and the external application PCB board can be fastened together without using solder welding, saving process and solder costs. During the device installation process, the auxiliary crimping half groove 3 can be installed and fixed by using an external installation tool, such as a fixing column similar to that disclosed in the patent disclosure single volume with publication number CN220400571U. Exemplarily, the auxiliary crimping half groove 3 is semicircular and has a radius smaller than the distance between the C-pole power pin and the edge of the plastic package. The first mounting hole 2 and the second mounting hole 4 are both arranged at the four diagonal points of the device and penetrate the plastic package 1. The device is better fixed to the external PCB board by means of the first mounting hole 2, the second mounting hole 4 and threads or bolts.

[0064] In addition, the C-pole power pin 6, the E-pole power pin 5 and the G-pole control pin 7 can be electrically connected to the corresponding IGBT chip 11 and the FRD chip 12 by vacuum welding with solder, or can be bonded by sticky conductive solder or conductive material, thereby avoiding the problems of complicated process and high cost caused by the bonding wire method of the power chip and pins of the traditional TO power device, simplifying the manufacturing process of the power device of this embodiment, and providing more options for device heat dissipation and fixing forms while ensuring power transmission, further improving the performance, application scenarios and reliability of the device.

[0065] Example 2

[0066] like Figures 4 to 6 As shown, the power chip of the power device packaging structure provided in this embodiment is configured to include a MOSFET power chip 13, and the power heat dissipation pins include an S-pole power pin 10 electrically connected to the source of the MOSFET chip 13, a D-pole power pin 9 electrically connected to the drain of the MOSFET chip 13, and a G'-pole control pin 8 electrically connected to the gate of the MOSFET chip 13.

[0067] In this embodiment, the G' pole control pin 8, the D pole power pin 9 and the S pole power pin 10 are configured in a sheet shape, and the three have the same thickness to ensure the stability of the power chip; it can be understood that, under the premise of ensuring the stability of the device, the thickness of the G' pole control pin 8, the D pole power pin 9 and the S pole power pin 10 can also be different.

[0068] Exemplarily, the G′ pole control pin 8 , the D pole power pin 9 and the S pole power pin 10 are all L-shaped wide-piece structures, and the G′ pole control pin 8 , the D pole power pin 9 and the S pole power pin 10 have the same thickness.

[0069] For example, Figure 4As shown, the MOSFET chip 13 adopts a MOSFET chip with a width of 3mm developed by our company, and the width of the D-pole power pin 9 is 0.5mm~2.5mm; the width of the G'-pole control pin 8 does not exceed the width of the gate of the MOSFET chip 13, and is preferably 0.66mm in this embodiment; the width of the S-pole power pin 10 is greater than the chip width of the MOSFET chip 13, but must not exceed the width of the plastic package 1 and cannot contact the G'-pole control pin 8, and is preferably 5mm in this embodiment.

[0070] This embodiment also increases the heat transfer area of ​​the power chip by setting L-shaped wide pins, and adopts L-shaped wide power heat dissipation pins to directly transmit and dissipate power, thereby increasing the heat transfer area A of the power chip when it is working, and the heat Q dissipated per unit time will be more. At the same time, the power heat dissipation pins are directly connected to the power chip, avoiding the traditional ultrasonic bonding process, reducing power loss and further reducing costs.

[0071] As shown in Table 3, the power device with a width of 5mm for the S-pole power pin 10, a width of 0.66mm for the G'-pole control pin 8, a width of 0.5mm to 2.5mm for the D-pole power pin 9, and a thickness of 1.5mm for the plastic package body 1, is operated at a platform of 1200V / 350A for 1h. The heat dissipation performance of the power device with different widths of the L-shaped wide piece of the power device is compared with the single tube of the existing power bonding lead TO-247 package as follows:

[0072] Table 3 Comparison of heat dissipation between this embodiment and the prior art

[0073]

[0074]

[0075] When the width of the D-pole power pin 9 exceeds 2.5 mm, it will contact the gate of the MOSFET chip, causing the MOSFET power chip to malfunction. Therefore, the width of the D-pole power pin 9 needs to be less than or equal to the difference between the total width of the power chip and the gate width.

[0076] like Figure 4 , Figure 5As shown, the thickness of the plastic package 1 is preferably 1.5mm to 3mm. The thickness of the plastic package of the TO power single-tube device also has a certain influence on the heat dissipation of the device. Based on the aforementioned implementation, this embodiment further selects a suitable thickness of the plastic package 1. The thickness of the plastic package 1 described in this embodiment should be greater than or equal to the sum of the thicknesses of the D-pole power pin 9, the S-pole power pin 10 and the MOSFET chip. As shown in Table 4, in a power device with a G'-pole control pin 8 width of 0.66mm, an S-pole power pin 10 width of 5mm, and a D-pole power pin 11 width of 2.5mm, after working for 1h at a power platform of 1200V / 350A, the change in the width of the plastic package 1 has a comparison of the heat dissipation performance of the device as follows:

[0077] Table 4 Heat dissipation performance of devices with different thickness of plastic package

[0078] The thickness of the plastic package in this embodiment 1.5mm 2mm 2.5mm 3mm 3.5mm 4mm The heat dissipation time of the device in this embodiment 15min 16min 18min 22min 23min 25min

[0079] Also based on Fourier's law Q = -kAΔT / Δx, when the thickness of the device plastic package 1 gradually increases, as the heat transfer distance Δx gradually increases, the temperature Q that is reduced and dissipated will be less, and the heat dissipation time required by the device will be longer. In this embodiment, when the thickness of the plastic package 1 is equal to 1.5mm, at this time, the power device of this embodiment realizes double-sided heat dissipation, and the side of the S-pole power pin 10 and the D-pole power pin 9 that is not connected to the MOSFET chip is just plastic-sealed by the plastic package 1. At this time, the heat dissipation performance of the S-pole power pin 10 and the D-pole power pin 9 reaches the best, and the heat dissipation effect of the power device is the best. At this time, the device can be suitable for higher power application scenarios. When the thickness of the plastic package 1 is greater than 3mm, the overall heat dissipation performance of the device is significantly reduced, but the plastic package 1 can still be thickened according to actual needs. For example, in some low-power (100-300W) application scenarios, in order to extend the service life of the device and improve the safety performance of the device, the thickness of the plastic package 1 is often set at 6-9mm.

[0080] In order to enable the power device of this embodiment to be more stably installed on the corresponding PCB circuit board, the power heat dissipation pin, G' pole control pin 8, S pole power pin 10, and D pole power pin 9 described in this embodiment are all L-shaped and protrude from the plastic package 1 toward the source of the MOSFET chip (vertically downward) to achieve a close fitting connection between the power device and the PCB circuit board, making the device firm and not easy to be damaged, thereby enhancing the reliability of the device.

[0081] Exemplarily, this embodiment is also equipped with a first mounting hole 2, a second mounting hole 4, and an auxiliary crimping half groove 3 for further fixing, so that the power device and the external application PCB board can be fastened together without using solder welding, saving process and solder costs. In addition, the S-pole power pin 10, the D-pole power pin 9, and the G'-pole control pin 8 can be connected to the corresponding MOSFET chip 13 by solder vacuum welding, or can be bonded by sticky conductive solder or conductive material, avoiding the problems of complicated process and high cost caused by the bonding wire method of the power chip and the pin of the traditional TO power device, simplifying the manufacturing process of the power device of this embodiment, and providing more options for device heat dissipation while ensuring power transmission.

[0082] Finally, if Figures 7-10 As shown, the power devices provided in Embodiment 1 and Embodiment 2 are sealed by the plastic sealing body with the same appearance. Fig. 9 This is the side appearance of the power device when the thickness of the plastic package is 3mm. Fig.10 This is the side appearance of the power device when the thickness of the plastic package is 1.5mm.

[0083] The sum of the pin thicknesses described in this article must be less than or equal to the thickness of the plastic package to be fully encapsulated. When the sum of the pin thicknesses is equal to the thickness of the plastic package, the thermal resistance of the power pin heat dissipation is the smallest, and the double-sided heat dissipation capacity reaches the maximum. However, there will be electrical safety hazards during operation. Therefore, in actual situations, when the sum of the pin thicknesses is equal to the thickness of the plastic package, the external insulation material such as insulating glue needs to be applied; the thickness of each power pin can be equal (the thickness of the C pole power pin, the thickness of the G pole control pin, and the thickness of the G pole control pin are the same, or the thickness of the S pole power pin, the thickness of the G' pole control pin, and the thickness of the D pole power pin are the same), or they can be different.

[0084] It should be noted that the plastic package of the power device can be made of epoxy resin, hard silicone gel or silicone gel cured by silicone gel, and the G pole control pin, C pole power pin, and E pole power pin in Example 1, and the G' pole control pin, S pole power pin, and D pole power pin in Example 2 are made of conductive metals, such as copper, aluminum, aluminum alloy, gold, silver, etc., which can be flexibly selected according to actual needs.

[0085] Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the utility model rather than to limit it. Although the technical solution of the utility model is described in detail with reference to the preferred embodiments, ordinary technicians in the field should understand that the technical solution of the utility model can be modified or replaced by equivalents without departing from the purpose and scope of the technical solution of the utility model, which should be included in the scope of the claims of the utility model.

Claims

1. A power device packaging structure, characterized in that: The packaging structure includes: a power chip, a power heat dissipation pin and a plastic package; The power chip is electrically connected to the first end of the power heat dissipation pin in contact mode and is sealed by the plastic package; the second end of the power heat dissipation pin is exposed outside the plastic package for external electrical connection and heat dissipation of the power chip.

2. The power device packaging structure according to claim 1, characterized in that: The power heat dissipation pin is an L-shaped wide piece.

3. The power device packaging structure according to claim 1, characterized in that: The power chip comprises an IGBT chip and an FRD chip, the collector of the IGBT chip is electrically connected to the first contact surface of the FRD chip, and the emitter of the IGBT chip is electrically connected to the second contact surface of the FRD chip; The power heat dissipation pins include a C-pole power pin electrically connected to the collector of the IGBT chip, a G-pole control pin electrically connected to the gate of the IGBT chip, and an E-pole power pin electrically connected to the emitter of the IGBT chip.

4. The power device packaging structure according to claim 3, characterized in that: The IGBT chip and the FRD chip are located between the C-pole power pin and the E-pole power pin.

5. The power device packaging structure according to claim 3, characterized in that: The thickness H of the plastic package body satisfies the following relationship: H≥H1+H2+H3, wherein H1 is the thickness of the C-pole power pin, H2 is the thickness of the E-pole power pin, and H3 is the thickness of the IGBT chip.

6. The power device packaging structure according to claim 3, characterized in that: The IGBT chip and the power heat dissipation pins are welded together by solder.

7. The power device packaging structure according to claim 1, characterized in that: The power chip includes a MOSFET chip, and the power heat dissipation pins include an S-pole power pin electrically connected to the source of the MOSFET chip, a D-pole power pin electrically connected to the drain of the MOSFET chip, and a G'-pole control pin electrically connected to the gate of the MOSFET chip.

8. A power device packaging structure according to claim 7, characterized in that: The MOSFET chip and the power heat dissipation pin are welded together by solder.

9. The power device packaging structure according to claim 7, characterized in that: The thickness H of the plastic package body satisfies the following relationship: H≥L1+L2+L3, where L1 is the thickness of the S-pole power pin, L2 is the thickness of the D-pole power pin, and L3 is the thickness of the MOSFET chip.

10. The power device packaging structure according to any one of claims 1 to 9, characterized in that: The plastic sealing body is formed of epoxy resin plastic sealing body or hard silicone gel, and has a thickness of 1.5 mm to 3 mm.

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