Single crystal furnace device

Abstract

The present application relates to the technical field of single crystal furnaces, and provides a single crystal furnace device, including a heating furnace, an insulation layer ring and a protective bracket, wherein the heating furnace includes a furnace bottom plate and side walls arranged around the furnace bottom plate, and the furnace bottom plate and the side walls are arranged around to form a furnace cavity. The insulation layer ring is located on the furnace bottom plate, and the protective bracket includes a top plate and a support arm arranged around one side of the top plate, and the top plate and the support arm are arranged together to form a protective cavity, and the protective bracket cover is arranged on the insulation layer, and the insulation layer is located in the protective cavity. The top plate and the support arm of the protective bracket can wrap the insulation layer to separate the insulation layer from the heat source above the protective bracket, which can effectively reduce and avoid the heat in the furnace cavity directly impacting the insulation layer. It can prevent the heat from impacting the insulation layer and causing the insulation layer to pulverize, thereby causing damage to the insulation layer. In this way, the protection of the insulation layer can be effectively improved, the service life of the insulation layer can be effectively increased, and the cost of single crystal silicon preparation can be reduced.

Description

Technical Field

[0001] The present application relates to the technical field of single crystal furnaces, and in particular to a single crystal furnace device. Background Art

[0002] Silicon is the most common and widely used semiconductor material. It is an active non-metallic element crystal and an important component of crystal materials. It is at the forefront of the development of new materials. Its main uses are as a semiconductor material and using solar photovoltaic power generation and heating. With the continuous development and growth of the photovoltaic industry, the power consumption in the production of monocrystalline silicon is also increasing. How to effectively reduce heat loss and improve heat utilization has become the top priority of the monocrystalline silicon production process.

[0003] In the process of manufacturing single crystal silicon, a single crystal furnace is required. The single crystal furnace includes a heating furnace and a crucible located in the heating furnace. The polycrystalline silicon material is placed in the crucible. A heat field is added in the heating furnace to melt the polycrystalline silicon material, thereby realizing the crystal pulling process and finally obtaining a single crystal silicon rod. In order to reduce heat loss, an insulation layer is laid at the bottom of the heating furnace, and the crucible is placed on the insulation layer to keep the temperature in the furnace warm.

[0004] However, the insulation layer is severely powdered at high temperatures, which greatly increases the preparation cost of single crystals. Utility Model Content

[0005] The present application provides a single crystal furnace device, which can effectively improve the protection of the thermal insulation layer, effectively increase the service life of the thermal insulation layer, and reduce the cost of single crystal silicon preparation.

[0006] The present application provides a single crystal furnace device, comprising:

[0007] A heating furnace, comprising a furnace bottom plate and side walls arranged around the furnace bottom plate, wherein the furnace bottom plate and the side walls are arranged around to form a furnace cavity;

[0008] A heat-insulating layer, located on the furnace bottom plate;

[0009] A protective bracket is located in the furnace cavity, and includes a top plate and a support arm arranged on one side of the top plate. The top plate and the support arm are together arranged to form a protective cavity. The protective bracket cover is arranged on the insulation layer, and the insulation layer is located in the protection cavity.

[0010] In the embodiment of the present application, a protective bracket is arranged in the heating furnace and the insulation layer is arranged in the protective cavity of the protective bracket. The top plate and the support arm of the protective bracket can wrap the insulation layer to separate the insulation layer from the heat source above the protective bracket, which can effectively reduce and avoid the heat in the furnace cavity directly impacting the insulation layer. It can prevent the heat from impacting the insulation layer and causing the insulation layer to pulverize, thereby causing damage to the insulation layer. In this way, the protection of the insulation layer can be effectively improved, the service life of the insulation layer can be effectively increased, and the cost of single crystal silicon preparation can be reduced.

[0011] In a possible implementation, it further includes a support platform, the support platform is arranged outside the support arm, and the support arm separates the thermal insulation layer from the support platform;

[0012] The diameter of the top plate is greater than the diameter of the support arm, and along the radial direction of the top plate, the top plate is placed on the support platform beyond the support arm portion.

[0013] In a possible implementation, the protection bracket further includes:

[0014] A heat dissipation tube is located on a side of the top plate facing the thermal insulation layer, and the heat dissipation tube has heat dissipation holes, and the heat dissipation holes penetrate the top plate and the heat dissipation tube;

[0015] The heat-insulating layer is provided with a first avoidance hole, and the heat-dissipating tube is passed through the first avoidance hole.

[0016] In a possible implementation, the protection bracket further includes:

[0017] An electrode cylinder is located on a side of the top plate facing the thermal insulation layer, the electrode cylinder has an electrode hole, the electrode hole passes through the top plate and the electrode cylinder, and an electrode is arranged in the electrode hole;

[0018] The heat-insulating layer is provided with a second avoidance hole, and the electrode cylinder is passed through the second avoidance hole.

[0019] In one possible implementation, it also includes:

[0020] A loading furnace, located in the furnace chamber, and used for loading polysilicon;

[0021] The protective bracket also includes:

[0022] A mounting tube, located on a side of the top plate facing the thermal insulation layer, the mounting tube having a mounting hole, the mounting hole passing through the top plate and the mounting tube;

[0023] A third avoidance hole is provided on the thermal insulation layer, and the installation tube is inserted into the third avoidance hole;

[0024] It also includes a bracket, a portion of which is installed in the installation hole, and the loading furnace is located on the bracket.

[0025] In a possible implementation, the thickness of the top plate is 50 mm to 70 mm;

[0026] The diameter of the top plate is 1500 mm to 1550 mm.

[0027] In a possible implementation, the outer diameter of the support arm is 1050 mm to 1100 mm;

[0028] The inner diameter of the support arm is 950 mm to 1000 mm.

[0029] In a possible implementation, the height of the support arm is 200 mm to 220 mm.

[0030] In a possible implementation, the heights of the heat dissipation cylinder, the electrode cylinder and the mounting cylinder are equal to the height of the support arm;

[0031] The diameters of the heat dissipation holes, the electrode holes and the mounting holes are all 152 mm to 172 mm;

[0032] The wall thicknesses of the heat dissipation cylinder, the electrode cylinder and the installation cylinder are all 152 mm to 172 mm.

[0033] In a possible implementation, a through hole is opened on the furnace bottom plate, the through hole is connected to the heat dissipation hole, and the furnace cavity is connected to the outside through the heat dissipation hole and the through hole. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the drawings required for use in the embodiments or the prior art description are briefly introduced below. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0035] Figure 1 A schematic diagram of the structure of a protective bracket provided in an embodiment of the present application at a viewing angle;

[0036] Figure 2 A schematic diagram of the structure of a protective bracket provided in an embodiment of the present application from another perspective;

[0037] Figure 3 A front view of a protective bracket provided in an embodiment of the present application;

[0038] Figure 4A top view of a protective bracket provided in an embodiment of the present application.

[0039] Reference numerals

[0040] 100-protection bracket;

[0041] 110-top plate;

[0042] 120-support arm;

[0043] 130-protection cavity;

[0044] 140- heat sink;

[0045] 141-heat dissipation hole;

[0046] 150-electrode cylinder;

[0047] 151-electrode hole;

[0048] 160-installation cylinder;

[0049] 161-Mounting holes. DETAILED DESCRIPTION

[0050] In order to make the purpose, technical solution and advantages of the embodiment of the utility model clearer, the technical solution in the embodiment of the utility model will be clearly and completely described below in conjunction with the drawings in the embodiment of the utility model. Obviously, the described embodiment is a part of the embodiment of the utility model, not all of the embodiments. Based on the embodiment of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0051] As mentioned in the above background technology, in the process of manufacturing single crystal silicon, a single crystal furnace is required. The single crystal furnace includes a heating furnace and a crucible located in the heating furnace. The polycrystalline silicon material is placed in the crucible. A heat field is added in the heating furnace to melt the polycrystalline silicon material, thereby realizing the crystal pulling process and finally obtaining a single crystal silicon rod. In order to reduce heat loss, an insulation layer is laid at the bottom of the heating furnace, and the crucible is placed on the insulation layer to keep the temperature in the furnace warm.

[0052] However, the insulation layer is severely powdered at high temperatures, which greatly increases the preparation cost of single crystals.

[0053] In order to solve the above problems, the embodiment of the present application provides a single crystal furnace device, by arranging a protective bracket in the heating furnace and arranging the thermal insulation layer in the protective cavity of the protective bracket, the top plate and the support arm of the protective bracket can wrap the thermal insulation layer to separate the thermal insulation layer from the heat source above the protective bracket, which can effectively reduce and avoid the heat in the furnace cavity directly impacting the thermal insulation layer. It can prevent the heat from impacting the thermal insulation layer and causing the thermal insulation layer to pulverize, thereby causing damage to the thermal insulation layer. In this way, the protection of the thermal insulation layer can be effectively improved, the service life of the thermal insulation layer can be effectively increased, and the cost of single crystal silicon preparation can be reduced.

[0054] A single crystal furnace device provided in an embodiment of the present application is described in detail below in conjunction with the accompanying drawings.

[0055] Figure 1 A schematic diagram of the structure of a protective bracket provided in an embodiment of the present application at a viewing angle, Figure 2 A schematic diagram of the structure of a protective bracket provided in an embodiment of the present application from another perspective.

[0056] The present application provides a single crystal furnace device, which can be used to prepare single crystals. Figure 1 As shown, the single crystal furnace device may include a heating furnace (not shown in the figure), an insulation layer (not shown in the figure) and a protective bracket 100, wherein the heating furnace may include a furnace bottom plate and side walls arranged around the furnace bottom plate, and the furnace bottom plate and the side walls may be arranged together to form a furnace cavity.

[0057] The insulation layer may be located on the furnace bottom plate, and the insulation layer may insulate the heat in the heating furnace, and may reduce or prevent the heat in the heating furnace from being lost from the bottom of the heating furnace. For example, the insulation layer may be soft felt, which has low thermal conductivity and may provide a good insulation effect for the heating furnace.

[0058] The protective bracket 100 may be located in the furnace cavity, wherein the ... Figure 2 As shown, the protection bracket 100 may include a top plate 110 and a support arm 120 arranged around the top plate 110 . The top plate 110 and the support arm 120 together form a protection cavity 130 . The protection bracket 100 is covered on the insulation layer, and the insulation layer is located in the protection cavity 130 .

[0059] The single crystal furnace device may further include a loading furnace, which is located in the furnace chamber and above the protective support 100. The loading furnace may be used to load polycrystalline silicon. For example, the loading furnace may be a crucible. In the process of preparing a single crystal, a heating device may be provided in the heating furnace to heat the loading furnace in the heating furnace, so as to refine the polycrystalline silicon in the loading furnace into single crystal silicon.

[0060] The protection bracket 100 may be made of a material with low thermal conductivity. For example, the protection bracket 100 may be made of a carbon-carbon composite material, which can reduce the thermal conductivity of the protection bracket 100 .

[0061] The top plate 110 and the support arm 120 of the protection bracket 100 can wrap the insulation layer to separate the insulation layer from the heat source above the protection bracket 100, which can effectively reduce the heat in the furnace cavity from directly impacting the insulation layer. It can prevent the heat from impacting the insulation layer and causing the insulation layer to pulverize, thereby causing damage to the insulation layer. In addition, it can protect the insulation layer from being oxidized by oxides. In this way, the protection of the insulation layer can be effectively improved, the service life of the insulation layer can be effectively increased, and the cost of single crystal silicon preparation can be reduced.

[0062] The single crystal furnace device may further include a support platform (not shown in the figure), which may be arranged outside the support arm 120, and the support arm 120 may separate the insulation layer from the support platform. As shown in the figure, the diameter of the top plate 110 is greater than the diameter of the support arm 120, and along the radial direction of the top plate 110, the part of the top plate 110 that exceeds the support arm 120 is placed on the support platform.

[0063] The support platform can provide support for the top plate 110 to improve the reliability and stability of the protection bracket 100 in the heating furnace. The support arm 120 can isolate the insulation layer from the support platform, reduce the heat transfer from the support platform to the insulation layer, and then cause the insulation layer to pulverize, and protect the insulation layer from being oxidized by oxides, which can effectively improve the protection effect of the insulation layer and extend the service life of the insulation layer.

[0064] Continue to see Figure 2 As shown, the protection bracket 100 may further include a heat dissipation tube 140, which may be located on the side of the top plate 110 facing the thermal insulation layer. The heat dissipation tube 140 has a heat dissipation hole 141, and the heat dissipation hole 141 may penetrate the top plate 110 and the heat dissipation tube 140. A first avoidance hole may be opened on the thermal insulation layer, and the heat dissipation tube 140 may be inserted into the first avoidance hole.

[0065] When the heating furnace needs to dissipate heat, the heat in the furnace cavity can be dissipated outward through the heat dissipation holes 141 in the heat dissipation holes 141. The heat dissipation tube 140 can isolate the insulation layer from the heat in the heat dissipation holes 141 to prevent the heat in the heat dissipation holes 141 from impacting the insulation layer and causing damage to the insulation layer. In addition, the insulation layer can be protected from oxidation by oxides, which helps to improve the protection of the insulation layer, thereby effectively increasing the service life of the insulation layer.

[0066] A through hole may be provided at the bottom of the heating furnace, and the through hole may be connected to the heat dissipation hole 141, and the furnace cavity may be connected to the outside through the heat dissipation hole 141 and the through hole. The heat in the furnace cavity may be transmitted to the outside of the heating furnace through the heat dissipation hole 141 and the through hole to achieve heat dissipation.

[0067] Continue to see Figure 2 As shown, the protection bracket 100 further includes an electrode cylinder 150, which can be located on the side of the top plate 110 facing the thermal insulation layer. The electrode cylinder 150 has an electrode hole 151, which can penetrate the top plate 110 and the electrode cylinder 150, and an electrode can be arranged in the electrode hole 151. A second avoidance hole can be opened on the thermal insulation layer, and the electrode cylinder 150 can be inserted into the second avoidance hole.

[0068] The electrode can be used to power the heating device in the heating furnace so that the heating device can generate heat. The electrode cylinder 150 can separate the insulation layer from the electrode hole 151 to reduce or avoid the heat in the furnace cavity being transmitted to the insulation layer through the electrode hole 151 to damage the insulation layer. In addition, the insulation layer can be protected from oxidation by oxides, thereby improving the protection of the insulation layer.

[0069] For example, see Figure 2 As shown, the number of electrode tubes 150 may be four, two of which may be used to set positive electrodes, and the other two of which may be used to set negative electrodes to supply power to the heating device.

[0070] There may be two heat dissipation tubes 140 , one heat dissipation tube 140 may be disposed between every two electrode tubes 150 , which can improve the uniformity of the heat dissipation tubes 140 on the furnace protection bracket 100 , and help improve the uniformity and consistency of heat dissipation of the heat dissipation holes 141 .

[0071] Continue to see Figure 2 As shown, the protection bracket 100 may further include a mounting tube 160, which may be located on the side of the top plate 110 facing the thermal insulation layer, and the mounting tube 160 may be located at the center of the top plate 110. The mounting tube 160 has a mounting hole 161, and the mounting hole 161 passes through the top plate 110 and the mounting tube 160. A third avoidance hole is provided on the thermal insulation layer, and the mounting tube 160 is inserted into the third avoidance hole.

[0072] The single crystal furnace device may further include a bracket (not shown in the figure), part of which is installed in the mounting hole 161, and the loading furnace is located on the bracket, so that the bracket supports the loading furnace above the protective bracket 100, so that the heat inside the furnace cavity can heat the loading furnace.

[0073] Among them, the installation tube 160 can separate the insulation layer from the installation hole 161 to reduce or avoid the heat in the furnace cavity being transmitted to the insulation layer through the installation hole 161, causing heat shock to the insulation layer. In addition, it can also protect the insulation layer from oxidation by oxides, thereby causing powdering and damage to the insulation layer, thereby improving the protection of the insulation layer.

[0074] Figure 3 A front view of a protective bracket provided in an embodiment of the present application, Figure 4 A top view of a protective bracket provided in an embodiment of the present application.

[0075] See also Figure 3 As shown, the thickness h1 of the top plate 110 can be 50 mm to 70 mm. This can improve the structural strength and rigidity of the top plate 110 and the structural stability of the protection bracket 100. Moreover, the above thickness can also improve the thermal insulation effect of the top plate 110, and can provide better thermal insulation protection for the thermal insulation layer, thereby effectively reducing or avoiding the powdering of the thermal insulation layer and prolonging the service life of the thermal insulation layer.

[0076] The diameter D1 of the top plate 110 may be 1500 mm to 1550 mm. This allows the top plate 110 to have a larger coverage area and provide better protection for the insulation layer, thereby effectively improving the protection of the insulation layer and prolonging the service life of the insulation layer.

[0077] Continue to see Figure 4 As shown, the outer diameter D2 of the support arm 120 can be 1050 mm to 1100 mm, and the inner diameter D3 can be 950 mm to 1000 mm. In this way, the support arm 120 can surround the thermal insulation layer, and the size of the protection cavity 130 can be within a more reasonable range, so that the thermal insulation layer can be completely located in the protection cavity 130, so as to provide better thermal insulation protection for the thermal insulation layer, and the support arm 120 can isolate the thermal insulation layer from the external heat, thereby effectively improving the protection of the thermal insulation layer.

[0078] Continue to see Figure 3 As shown, the height h2 of the support arm 120 is 200 mm to 220 mm. In this way, the protection of the protection cavity 130 can be within a more reasonable range, and the protection cavity 130 can completely cover the insulation layer in height to provide more comprehensive thermal insulation protection for the insulation layer, thereby effectively improving the protection effect of the insulation layer.

[0079] Among them, the height of the heat dissipation tube 140, the electrode tube 150 and the mounting tube 160 can be equal to the height of the support arm 120, that is, the height of the heat dissipation tube 140, the electrode tube 150 and the mounting tube 160 are also 200mm~220mm, so that the bottom end surfaces of the heat dissipation tube 140, the electrode tube 150, the mounting tube 160 and the support arm 120 are flush, so that the bottom end surfaces of the heat dissipation tube 140, the electrode tube 150, the mounting tube 160 and the support arm 120 can all contact with the bottom wall of the heating furnace at the same time.

[0080] This can avoid the formation of a gap between the bottom end surface of the heat dissipation tube 140, the electrode tube 150, the installation tube 160 or one of the support arms 120 and the bottom wall of the heating furnace, so that the heat in the heating furnace flows into the insulation layer through the gap, which can effectively improve the isolation effect between the insulation layer and the furnace cavity, thereby effectively improving the protection of the insulation layer.

[0081] Continue to see Figure 4 As shown, the diameter d1 of the heat dissipation hole 141, the diameter d2 of the electrode hole 151, and the diameter d3 of the mounting hole 161 can all be 152 mm to 172 mm. The above diameter size can make the heat dissipation hole 141 have a higher heat dissipation efficiency. The electrode hole 151 provides sufficient installation space for the electrode. The mounting hole 161 provides a reasonable installation space for the bracket, which can effectively improve the rationality of the spatial layout inside the heating furnace.

[0082] The wall thickness of the heat dissipation tube 140, the electrode tube 150 and the mounting tube 160 is 152 mm to 172 mm. This can effectively improve the structural strength and rigidity of the heat dissipation tube 140, the electrode tube 150 and the mounting tube 160, thereby effectively reducing or avoiding deformation or damage of the heat dissipation tube 140, the electrode tube 150 and the mounting tube 160, and helping to improve the overall structural stability of the protection bracket 100.

[0083] In one embodiment of the present application, the protection bracket 100 may be an integrally manufactured structure to ensure the material uniformity of the protection bracket 100 .

[0084] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0085] In the description of the present invention, it should be understood that the terms "including" and "having" and any variations thereof used herein are intended to cover non-exclusive inclusions. For example, a process, method, system, product or apparatus comprising a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to these processes, methods, products or apparatuses.

[0086] Unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed", etc. should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral one; it can be directly connected or indirectly connected through an intermediate medium, and it can make the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this utility model can be understood according to specific circumstances. In addition, the terms "first", "second", etc. are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated.

[0087] Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the utility model, rather than to limit it. Although the utility model has been described in detail with reference to the aforementioned embodiments, ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not make the essence of the corresponding technical solution deviate from the scope of the technical solution of the embodiments of the utility model.

Claims

1. A single crystal furnace device, characterized in that: include: A heating furnace, comprising a furnace bottom plate and side walls arranged around the furnace bottom plate, wherein the furnace bottom plate and the side walls are arranged around to form a furnace cavity; A heat-insulating layer, located on the furnace bottom plate; A protective bracket is located in the furnace cavity, and includes a top plate and a support arm arranged on one side of the top plate. The top plate and the support arm are together arranged to form a protective cavity. The protective bracket cover is arranged on the insulation layer, and the insulation layer is located in the protection cavity.

2. The single crystal furnace device according to claim 1, characterized in that: It also includes a support platform, which is arranged outside the support arm, and the support arm separates the insulation layer from the support platform; The diameter of the top plate is greater than the diameter of the support arm, and along the radial direction of the top plate, the top plate is placed on the support platform beyond the support arm portion.

3. The single crystal furnace device according to claim 1 or 2, characterized in that: The protective bracket also includes: A heat dissipation tube is located on a side of the top plate facing the thermal insulation layer, and the heat dissipation tube has heat dissipation holes, and the heat dissipation holes penetrate the top plate and the heat dissipation tube; The heat-insulating layer is provided with a first avoidance hole, and the heat-dissipating tube is passed through the first avoidance hole.

4. The single crystal furnace device according to claim 3, characterized in that: The protective bracket also includes: An electrode cylinder is located on a side of the top plate facing the thermal insulation layer, the electrode cylinder has an electrode hole, the electrode hole passes through the top plate and the electrode cylinder, and an electrode is arranged in the electrode hole; The heat-insulating layer is provided with a second avoidance hole, and the electrode cylinder is passed through the second avoidance hole.

5. The single crystal furnace device according to claim 4, characterized in that: Also includes: A loading furnace, located in the furnace chamber, and used for loading polysilicon; The protective bracket also includes: A mounting tube is located on a side of the top plate facing the thermal insulation layer, and the mounting tube is located at a central portion of the top plate, and the mounting tube has a mounting hole, and the mounting hole passes through the top plate and the mounting tube; A third avoidance hole is provided on the thermal insulation layer, and the installation tube is inserted into the third avoidance hole; It also includes a bracket, a portion of which is installed in the installation hole, and the loading furnace is located on the bracket.

6. The single crystal furnace device according to claim 1 or 2, characterized in that: The thickness of the top plate is 50 mm to 70 mm; The diameter of the top plate is 1500 mm to 1550 mm.

7. The single crystal furnace device according to claim 1 or 2, characterized in that: The outer diameter of the support arm is 1050 mm to 1100 mm; The inner diameter of the support arm is 950 mm to 1000 mm.

8. The single crystal furnace device according to claim 1 or 2, characterized in that: The height of the support arm is 200 mm to 220 mm.

9. The single crystal furnace device according to claim 5, characterized in that: The heights of the heat dissipation cylinder, the electrode cylinder and the mounting cylinder are equal to the height of the support arm; The diameters of the heat dissipation holes, the electrode holes and the mounting holes are all 152 mm to 172 mm; The wall thicknesses of the heat dissipation cylinder, the electrode cylinder and the installation cylinder are all 152 mm to 172 mm.

10. The single crystal furnace device according to claim 3, characterized in that: The furnace bottom plate is provided with a through hole, the through hole is communicated with the heat dissipation hole, and the furnace cavity is communicated with the outside through the heat dissipation hole and the through hole.

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