Semiconductor process equipment and lower electrode assembly thereof

Abstract

The present application provides a semiconductor process equipment and a lower electrode assembly thereof, wherein the lower electrode assembly includes a hot edge ring and a focusing ring, wherein the focusing ring has a support groove arranged along the inner ring, the bottom of the support groove is used to support the wafer, the hot edge ring is located below the focusing ring, and the ratio of the ring width of the hot edge ring to the spacing between the bottom of the support groove and the notch in the axial direction of the focusing ring is greater than or equal to 4.5, and less than or equal to 12. The present application provides that the higher the side wall height of the support groove, the less the amount of plasma moving in the direction away from the center of the wafer from the upper direction of the wafer edge, and the hot edge ring can change the distribution of the direction of movement of the plasma above the wafer edge. The support groove and the hot edge ring cooperate to adjust the direction of movement of the plasma above the wafer edge, which can improve the consistency of the etching rate at the edge position and the center position of the wafer.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing, and in particular, to a semiconductor process equipment and a lower electrode assembly thereof. Background Art

[0002] The manufacturing process of semiconductor chips with integrated circuits as the core includes complex process steps such as photolithography masking, etching and thin film deposition. Among them, the etching process processes the wafer through plasma. Plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules and free radicals. These active particles interact with the wafer substrate to cause various physical and chemical changes on the material surface, completing the precise etching of the material.

[0003] Controlling the uniformity of etching rate across the entire wafer surface has always been one of the main issues in plasma etching equipment design, especially how to keep the etching rate at the edge and center of the wafer consistent. However, this problem has not been effectively solved.

[0004] Therefore, how to improve the consistency of etching rates at the edge and center of the wafer is a technical problem that urgently needs to be solved in this field. Utility Model Content

[0005] The present application aims to solve at least one of the technical problems existing in the prior art, and proposes a semiconductor process equipment and a lower electrode assembly thereof, which can improve the consistency of etching rate at the edge and center positions of a wafer.

[0006] To achieve the purpose of the present application, a lower electrode assembly is provided for semiconductor process equipment, including a hot edge ring and a focus ring, wherein:

[0007] The focusing ring has a supporting groove arranged along the inner ring, the bottom of the supporting groove is used to support the wafer, the distance between the bottom of the supporting groove and the notch is greater than a preset height, the hot edge ring is located below the focusing ring, and the ratio of the ring width of the hot edge ring to the spacing from the bottom of the supporting groove to the notch along the axial direction of the focusing ring is greater than or equal to 4.5 and less than or equal to 12.

[0008] In some embodiments, the distance from the bottom of the support groove to the groove opening is greater than or equal to 1.7 mm and less than or equal to 2.1 mm.

[0009] In some embodiments, the hot edge ring width is greater than or equal to 10 mm and less than or equal to 20 mm.

[0010] In some embodiments, the hot edge ring is made of anodized aluminum.

[0011] In some embodiments, an electrostatic chuck is further included, wherein the focusing ring and the hot edge ring surround the outer circumference of the electrostatic chuck, and the distance between the inner ring of the focusing ring and the outer wall of the electrostatic chuck is greater than or equal to 2 mm and less than or equal to 10 mm.

[0012] In some embodiments, the hot edge ring includes a cylinder and a ring body surrounding the outer circumference of the cylinder, the electrostatic chuck is penetrated through the inner side of the cylinder, and the distance between the cylinder and the electrostatic chuck is greater than or equal to 0 mm and less than or equal to 5 mm.

[0013] In some embodiments, further comprising a base ring disposed around the electrostatic chuck and below the hot edge ring;

[0014] The cylinder body penetrates into the inner ring of the base ring, and the base ring is used to support the ring body.

[0015] In some embodiments, the width of the hot edge ring is 6%-15% of the radius of the electrostatic chuck.

[0016] In some embodiments, the focusing ring and the hot edge ring are coaxially arranged, the outer diameters of the focusing ring and the hot edge ring are the same, and the diameter of the inner ring of the hot edge ring is smaller than the diameter of the circumference of the support groove side wall.

[0017] The present application also provides a semiconductor process equipment, comprising a process chamber and any one of the above-mentioned lower electrode assemblies, wherein the lower electrode assembly is at least partially disposed in the process chamber.

[0018] This application has the following beneficial effects:

[0019] The lower electrode assembly provided in the present application is used for semiconductor process equipment, including a hot edge ring and a focusing ring, wherein the focusing ring has a support groove arranged along the inner ring, the bottom of the support groove is used to support the wafer, the distance between the bottom of the support groove and the notch is greater than a preset height, the hot edge ring is located below the focusing ring, and the ratio of the ring width of the hot edge ring to the spacing between the bottom of the support groove and the notch in the axial direction of the focusing ring is greater than or equal to 4.5 and less than or equal to 12.

[0020] In the present application, the larger the distance between the bottom of the support groove and the groove opening, the smaller the amount of plasma moving in the direction away from the center of the wafer from the upper edge of the wafer, and the change in the width of the hot edge ring can change the distribution of the direction of plasma movement above the wafer edge. The support groove and the hot edge ring cooperate to adjust the direction of plasma movement above the wafer edge, which can improve the consistency of the etching rate at the edge and center of the wafer.

[0021] Another object of the present application is to provide a semiconductor process equipment including the above-mentioned lower electrode assembly and having the above-mentioned advantages. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 A schematic diagram of the structure of processing the edge of a wafer in the prior art;

[0023] Figure 2 This is a schematic structural diagram of a lower electrode assembly according to a specific implementation method of the present application;

[0024] Figure 3 for Figure 2 A partial enlarged view of

[0025] Figure 4 A comparison chart of simulation results without and with thermal edge rings;

[0026] Figure 5 A comparison diagram of simulation results of two embodiments with different side wall heights of the support groove of the focus ring;

[0027] Figure 6 2. Distribution diagram of ion movement direction at the edge of the wafer in different embodiments;

[0028] Figure 7 It is a comparison diagram of the wafer processing effect without a thermal edge ring and a specific embodiment of the present application.

[0029] in, Figures 1 to 3 The reference numerals in the drawings are:

[0030] 100, focusing ring; 101, supporting groove; 200, hot edge ring; 201, cylinder; 202, ring body; 300, base ring; 400, electrostatic chuck; 500, wafer; 501, shallow groove; 502, fillet. DETAILED DESCRIPTION

[0031] In order to enable those skilled in the art to better understand the technical solution of the present application, the semiconductor process equipment and the lower electrode assembly provided by the present application are described in detail below in conjunction with the accompanying drawings.

[0032] The shallow trench isolation etch (STI-ET) process first etches away silicon to form a shallow trench 501, and then fills the shallow trench 501 with insulating material to achieve the purpose of isolation. Figure 1As shown, taking a 12-inch wafer as an example, the slice morphology at the edge of the wafer where the radius is greater than 143mm will be asymmetrical. This is mainly because the potential distribution at the edge of the wafer causes most of the ions to move toward the center of the wafer, and the ions will etch the sharp corners of the outer silicon nitride hard mask to form a rounded corner 502. And after the ions incident on the center of the wafer hit the silicon nitride hard mask, they will be reflected to the side walls of the silicon trench, causing the side walls of the silicon trench to tilt asymmetrically. This morphology will cause difficulties in filling the oxide, ultimately affecting device performance.

[0033] The lower electrode assembly provided in the present application is used in semiconductor process equipment. The lower electrode assembly cooperates with the upper electrode assembly of the semiconductor process equipment to form an electric field. The process gas forms plasma in the electric field and moves along the electric field to process the wafer 500. The distribution of the electric field, flow field and temperature field in the semiconductor process equipment affects the moving direction of the plasma.

[0034] like Figure 2 As shown, the lower electrode assembly includes a hot edge ring 200 and a focus ring 100 , wherein the focus ring 100 is disposed above the hot edge ring 200 , the focus ring 100 is used to support the wafer 500 , and the hot edge ring 200 is used to improve the electric field distribution at the edge of the wafer 500 .

[0035] The focus ring 100 has a support groove 101 arranged along the inner circle. The support groove 101 penetrates the upper surface and the inner side wall of the focus ring 100, so that the support groove 101 surrounds the inner circle of the focus ring 100, and the diameter of the circumference of the side wall of the support groove 101 is greater than or equal to the diameter of the wafer 500. When placed on the focus ring 100, the wafer 500 is accommodated in the support groove 101, and the bottom of the support groove 101 is used to support the wafer 500. The distance between the bottom of the support groove 101 and the groove opening along the axial direction of the focus ring 100 (hereinafter referred to as the height of the side wall of the support groove 101) is greater than the thickness of the wafer 500, and the top of the side wall of the support groove 101 is higher than the upper surface of the wafer 500. The side wall of the support groove 101 affects the flow field distribution above the edge of the wafer 500, so the side wall of the support groove 101 can be used to reduce the amount of plasma moving in the direction away from the center of the wafer 500 from the upper edge of the wafer 500. Generally, the higher the height of the sidewall of the supporting groove 101 is, the smaller the amount of plasma moving in the direction from the edge of the wafer 500 to the center of the wafer 500 is.

[0036] The hot edge ring 200 can cooperate with the electrostatic chuck 400 to generate an inductively coupled electric field to optimize the etching speed at the edge of the wafer 500. The change in the ring width of the hot edge ring 200 will affect the distribution of the electric field. The hot edge ring 200 adopts an appropriate width to cooperate with the focusing ring 100 to adjust the distribution and movement direction of the plasma. The present application takes the movement direction away from the center of the wafer 500 as the positive direction, reduces the number of plasmas with a negative movement direction, thereby reducing the plasma polishing of the side of the shallow groove 501 away from the center of the wafer 500, improves the etching morphology at the edge of the wafer 500, and reduces the difference in morphology between the center of the wafer 500 and the center of the wafer 500.

[0037] Optionally, the ratio of the ring width of the hot edge ring 200 to the height of the side wall of the support groove 101 is greater than or equal to 4.5 and less than or equal to 12. The ring width refers to the difference between the outer radius of the ring and the inner radius of the ring. The side wall of the support groove 101 cooperates with the hot edge ring 200 to adjust the movement direction of the plasma so that the movement direction of the plasma is closer to the surface of the vertical wafer 500. The proportional relationship between the height of the side wall of the support groove 101 and the ring width of the hot edge ring 200 provided in this embodiment can better meet this purpose. Of course, the user can also set the ratio of the two as needed, which is not limited here.

[0038] In this embodiment, the lower electrode assembly adjusts the movement direction of the plasma above the edge of the wafer 500 through the cooperation of the focusing ring 100 and the hot edge ring 200, reducing the amount of plasma with a negative movement direction, thereby improving the etching morphology at the edge of the wafer 500.

[0039] In some embodiments, the diameter of the wafer 500 processed by the semiconductor process equipment is 12 inches. In order to determine the influence of the hot edge ring 200, the present application simulates the potential distribution and the distribution of the plasma movement direction in two cases: without the hot edge ring 200 and with the hot edge ring 200. Figure 4 As shown, Figure a is the potential distribution without the hot edge ring 200, Figure b is the potential distribution with the hot edge ring 200, Figure c is the plasma movement direction distribution without the hot edge ring 200, and Figure d is the plasma movement direction distribution with the hot edge ring 200.

[0040] A chamber liner is provided in the process chamber of the semiconductor process equipment, and the chamber liner is used to protect the inner wall of the process chamber and reduce the corrosion of the inner wall of the process chamber by the plasma. The chamber liner usually surrounds the outer periphery of the electrostatic chuck and is grounded. The electrostatic chuck 400, as the main component of the lower electrode assembly, forms an electric field with the upper electrode assembly. The focusing ring 100 is usually located between the electrostatic chuck 400 and the chamber liner to play an insulating role. During the process, the plasma moves toward the electrostatic chuck 400 under the action of the electric field. However, since the potential of the chamber liner is also lower than the potential of the upper electrode assembly, part of the plasma will also move toward the chamber liner, and thus a voltage will also be generated on the side of the chamber liner facing the plasma. Of course, the process hopes that more plasma will move in the direction of the electrostatic chuck 400, and increasing the voltage difference between the chamber liner and the electrostatic chuck 400 will help achieve this goal.

[0041] The effective area of ​​the electrostatic chuck 400 is set to S E , the effective area of ​​the chamber lining is S 0 , the surface voltage of the chamber liner is V 0 , then the voltage on the surface of the electrostatic chuck 400 is V E , V 0 and V E The relationship is If the hot edge ring 200 is added, it is equivalent to increasing the effective surface area SE of the electrostatic chuck 400, thereby increasing the voltage VE on the surface of the electrostatic chuck 400, thereby affecting the etching rate.

[0042] like Figure 4 As shown, in the embodiment with the hot edge ring 200, the potential at the edge of the wafer 500 changes more smoothly from the top of the wafer 500 to the top of the focus ring 100. The direction of movement away from the center of the wafer 500 is the positive direction. In the embodiment without the hot edge ring 200, the direction of plasma movement is mainly negative; in the embodiment with the hot edge ring 200, the number of plasmas moving in the positive direction increases, which is conducive to improving the asymmetry of the edge of the wafer 500.

[0043] Optionally, in order to determine the influence of the focus ring 100 , the present application performs a simulation analysis on the potential distribution and the plasma movement direction distribution for the focus ring 100 with different support groove 101 sidewall heights. Figure 5 For the two embodiments with different side wall heights of the support groove 101, the side wall height of the support groove 101 in the left embodiment is H1, and the side wall height of the support groove 101 in the right embodiment is H2, where H2>H1. Figure 5 As shown, Figure a is the potential distribution of the side wall height H1 of the support groove 101, Figure b is the potential distribution of the side wall height H2 of the support groove 101, Figure c is the plasma movement direction distribution of the side wall height H1 of the support groove 101, and Figure d is the plasma movement direction distribution of the side wall height H2 of the support groove 101.

[0044] from Figure 5 It can be seen that after the height of the side wall of the supporting groove 101 is increased, the amount of negatively moving plasma is significantly reduced, which can help improve the asymmetry of the edge of the wafer 500 .

[0045] according to Figure 4 and Figure 5 The simulation results show that increasing the ring width of the hot edge ring 200 and increasing the side wall height of the support groove 101 of the focus ring 100 can effectively improve the potential distribution and plasma movement direction distribution at the edge of the wafer 500.

[0046] In addition, although the increase in the number of plasmas moving in the positive direction can improve the asymmetry of the edge of the wafer 500, the positive and negative movement of the plasma is not the most ideal condition. When the number of directions in which the ions move perpendicular to the wafer 500 increases and the number of oblique incident directions decreases, the morphology of the pattern at the edge of the wafer 500 will be more symmetrical after etching. Therefore, the best way to match the focus ring 100 and the hot edge ring 200 is to find the largest number of plasmas moving in the direction of 0.

[0047] Furthermore, the present application selected several groups of embodiments for simulation and statistically analyzed the distribution of the plasma movement direction at the edge of the wafer 500. The distance between the bottom surface and the top surface of the focus ring 100 is the thickness of the focus ring 100. Figure 6 As shown, the embodiments include a focus ring 100 having a thickness of 5.9 mm and a hot edge ring 200 having a ring width of 0 mm; a focus ring 100 having a thickness of 5.9 mm and a hot edge ring 200 having a ring width of 11 mm; a focus ring 100 having a thickness of 5.9 mm and a hot edge ring 200 having a ring width of 22 mm; a focus ring 100 having a thickness of 5.9 mm and a hot edge ring 200 having a ring width of 32 mm; a focus ring 100 having a thickness of 7 mm and a hot edge ring 200 having a ring width of 11 mm; a focus ring 100 having a thickness of 7 mm and a hot edge ring 200 having a ring width of 32 mm.

[0048] from Figure 6It can be seen that under the condition that the thickness of the focusing ring 100 remains unchanged at 5.9mm, as the width of the hot edge ring 200 increases, the direction of plasma movement at the edge of the wafer 500 moves from positive to negative, and the direction of plasma movement becomes more dispersed. Under the condition of the same hot edge ring 200 width, the thickness of the focusing ring 100 is 7.0mm compared to the thickness of the focusing ring 100 of 5.9mm, and the angle of plasma movement is more negative, that is, more plasma moves in a direction away from the center of the wafer 500. In the present application, the thickness of the focusing ring 100 located below the bottom of the support groove 101 is 3.8mm-4.2mm, and the value range of this thickness remains unchanged when the overall thickness of the focusing ring 100 increases. Therefore, as the overall thickness of the focusing ring 100 increases, the side wall height of the support groove 101 also increases accordingly. Therefore, combined with Figure 6 It can be seen that as the sidewall height of the support groove 101 increases, the range of the plasma movement angle remains basically unchanged, and the sidewall height of the support groove 101 only affects the incident angle of the plasma movement at the edge of the wafer 500. The ring width of the hot edge ring 200 not only affects the incident angle of the plasma but also affects the divergence of the incident angle distribution, that is, as the ring width of the hot edge ring 200 increases, the distribution range of the incident angle of the plasma also increases, and the plasma movement angle at the edge of the wafer 500 changes from being relatively concentrated to being relatively dispersed. In the absence of the hot edge ring 200, the incident angle of the plasma is in the direction away from the center of the wafer 500. In order to improve the problem of the chamfering of the edge of the wafer 500, it is necessary to set the hot edge ring 200 in the lower electrode assembly so that the movement direction of the ions is adjusted to the positive direction. Adjusting the ring width of the hot edge ring 200 can not only change the movement direction of the ions, but also change the number of plasmas in different directions. Combined with the focusing ring 100 to adjust the incident angle of the plasma, the chamfering phenomenon of the device at the edge of the wafer 500 can be effectively improved.

[0049] After simulation, it was determined that the thickness of the focus ring 100 is greater than or equal to 5 mm and less than or equal to 8 mm. The width of the hot edge ring 200 is greater than or equal to 10 mm and less than or equal to 20 mm. A preferred embodiment of the present application is that the thickness of the focus ring 100 is 5.9 mm, and the width of the hot edge ring 200 is 11 mm. In this specific implementation, the side wall height of the support groove 101 is greater than or equal to 1.7 mm and less than or equal to 2.1 mm. Of course, the user can also select the thickness of the focus ring 100, the side wall height of the support groove 101 and the width of the hot edge ring 200 as needed, which is not limited here.

[0050] In some embodiments, the hot edge ring 200 is made of anodized aluminum, which generally refers to all aluminum or aluminum alloys that have been treated by an anodizing process. The surface of anodized aluminum has a relatively stable oxide, which can isolate chemical attacks and improve the corrosion resistance of the hot edge ring 200. Moreover, the main body of the anodized aluminum material is a metal material with a low resistivity. In the prior art, the hot edge ring is usually made of silicon carbide material. The hot edge ring 200 made of anodized aluminum cooperates with the electrostatic chuck 400 to generate an induced electric field. Compared with silicon carbide material, the inductive coupling electric field intensity generated by the metal material is stronger, which can better control the movement direction of the plasma. In addition, the anodized aluminum material also helps to reduce the equipment cost of the lower electrode assembly. Of course, the hot edge ring 200 can also be made of other conductive materials as needed, which is not limited here.

[0051] In some embodiments, the focus ring 100 is made of quartz, which can withstand high temperatures. Of course, the user can also set the focus ring 100 to other materials as needed, which is not limited here.

[0052] In some embodiments, the lower electrode assembly further includes an electrostatic chuck 400. The focus ring 100 and the hot edge ring 200 are both disposed around the electrostatic chuck 400. Figure 2 and Figure 3 As shown, the focusing ring 100 and the hot edge ring 200 are both coaxially arranged with the electrostatic chuck 400. The height of the bottom of the supporting groove 101 of the focusing ring 100 is equal to the height of the upper surface of the electrostatic chuck 400, that is, the bottom of the supporting groove 101 and the upper surface of the electrostatic chuck 400 jointly support the wafer 500. The distance between the inner ring of the focusing ring 100 and the outer wall of the electrostatic chuck 400 is greater than or equal to 2 mm, and less than or equal to 10 mm. The focusing ring 100 and the electrostatic chuck 400 are separated by a certain distance, which can better play an insulating role, and at the same time avoid the plasma leaking from the gap between the two into the chamber lining and the inner wall of the process chamber due to the large distance between the two. Of course, the user can also set the distance between the focusing ring 100 and the electrostatic chuck 400 as needed, which is not limited here.

[0053] In some embodiments, the hot edge ring 200 includes a ring body 202 and a cylinder 201, the ring body surrounds the outer periphery of the cylinder 201, the electrostatic chuck 400 is disposed inside the cylinder 201, and the distance between the cylinder 201 of the hot edge ring 200 and the electrostatic chuck 400 is greater than or equal to 0 mm and less than or equal to 5 mm. Among them, preferably 0 mm, if the hot edge ring 200 contacts the electrostatic chuck 400, the hot edge ring 200 can generate a strong inductive coupling electric field, thereby improving the effect of the lower electrode assembly, and at the same time improving the distribution of the plasma movement direction, so that more plasma moves in a direction perpendicular to the plane where the upper surface of the wafer 500 is located. The small distance between the hot edge ring 200 and the electrostatic chuck 400 can also enable the hot edge ring 200 to generate a relatively strong inductive coupling electric field, thereby achieving the purpose of improving the distribution of the plasma movement direction. Moreover, the smaller distance between the hot edge ring 200 and the electrostatic chuck 400 can increase the distribution range of the inductively coupled electric field of the hot edge ring, and the inductively coupled electric field adjusts the movement direction of the plasma, so that more plasma moves in a direction perpendicular to the upper surface of the wafer 500. Of course, the distance between the hot edge ring 200 and the electrostatic chuck 400 can be set according to the needs of the user, and is not limited here.

[0054] In some embodiments, the lower electrode assembly further includes a base ring 300, which is disposed around the electrostatic chuck and is located below the hot edge ring 200. The cylinder of the hot edge ring 200 penetrates into the inner ring of the base ring 300. The lower surface of the ring body 202 is in contact with the upper surface of the base ring 300, and the base ring 300 is used to support the ring body 202.

[0055] Optionally, the ring width of the hot edge ring 200 is 6%-15% of the radius of the electrostatic chuck 400. First, the electrostatic chuck 400 needs to meet the requirements of supporting the wafer 500 and cooperating with the upper electrode assembly to form an electric field, so the electrostatic chuck 400 needs to reach a radius length that meets the conditions. Taking the processing of a 12-inch wafer as an example, the radius of the electrostatic chuck 400 is usually 150mm. The hot edge ring 200 needs to reach a certain ring width to meet the requirements of changing the morphology at the edge of the wafer 500. For this reason, there is a proportional relationship between the ring width of the hot edge ring 200 and the radius of the electrostatic chuck 400. Of course, the user can determine the proportional relationship between the ring width of the hot edge ring 200 and the diameter of the electrostatic chuck 400 according to the specific process, and it is not limited here.

[0056] like Figure 7As shown in the figure, Figure a shows the asymmetric left-right slice morphology at 143mm from the center of the wafer 500 without the thermal edge ring 200, with the angles on both sides being 84.7° and 88° respectively. Figure b corresponds to the slice 143mm away from the center of the wafer 500, showing that under the conditions of an 11mm long thermal edge ring 200 and a 5.9mm thick focusing ring 100, the angles on both sides of the silicon are 87.4° and 87.6° respectively. Under this structural design, the symmetry of the edge of the wafer 500 is significantly improved compared to the solution in Figure a.

[0057] In some embodiments, the focus ring 100 and the hot edge ring 200 are coaxially arranged, and the outer diameters of the focus ring 100 and the hot edge ring 200 are the same, and the diameter of the inner circle of the hot edge ring 200 is smaller than the diameter of the circumference of the side wall of the support groove 101. The focus ring 100 and the hot edge ring 200 have the same outer diameter, and when the focus ring 100 and the hot edge ring 200 are arranged on the outer periphery of the electrostatic chuck 400, the outer edges of the focus ring 100 and the hot edge ring 200 are flush. During the assembly process, whether the outer edges of the focus ring 100 and the hot edge ring 200 are flush can determine whether the focus ring 100 and the hot edge ring 200 are coaxial, thereby facilitating the adjustment of the coaxiality of the focus ring 100, the hot edge ring 200 and the electrostatic chuck 400. The high coaxiality of the three can improve the uniformity of the distribution of the temperature field, the electric field, etc. above the lower electrode assembly. The inner diameter of the hot edge ring 200 is usually smaller than the diameter of the wafer 500 , and the projections of the hot edge ring 200 and the wafer 500 on the horizontal plane overlap. The induced electric field of the hot edge ring 200 can pass through the edge of the wafer 500 and adjust the distribution of plasma at the edge of the wafer 500 .

[0058] The present application also provides a semiconductor process equipment, including a process chamber and the lower electrode assembly in any one of the above embodiments, wherein the lower electrode assembly is at least partially disposed in the process chamber. The structure of other parts of the semiconductor process equipment can refer to the prior art and will not be described in detail here.

[0059] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present application, but the present application is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and substance of the present application, and these modifications and improvements are also considered to be within the scope of protection of the present application.

Claims

1. A lower electrode assembly for semiconductor process equipment, characterized in that: Includes a hot edge ring and a focus ring, wherein: The focusing ring has a supporting groove arranged along the inner ring, the bottom of the supporting groove is used to support the wafer, the hot edge ring is located below the focusing ring, and the ratio of the ring width of the hot edge ring to the spacing from the bottom of the supporting groove to the groove opening along the axial direction of the focusing ring is greater than or equal to 4.5 and less than or equal to 12.

2. The lower electrode assembly according to claim 1, characterized in that: The distance between the bottom of the support groove and the groove opening is greater than or equal to 1.7 mm and less than or equal to 2.1 mm.

3. The lower electrode assembly according to claim 1, characterized in that: The hot edge ring width is greater than or equal to 10 mm and less than or equal to 20 mm.

4. The lower electrode assembly according to claim 1, characterized in that: The hot edge ring is made of anodized aluminum.

5. The lower electrode assembly according to any one of claims 1 to 4, characterized in that: It also includes an electrostatic chuck, wherein the focusing ring and the hot edge ring surround the outer periphery of the electrostatic chuck, and the distance between the inner ring of the focusing ring and the outer wall of the electrostatic chuck is greater than or equal to 2 mm and less than or equal to 10 mm.

6. The lower electrode assembly according to claim 5, characterized in that: The hot edge ring includes a cylinder and a ring body surrounding the outer circumference of the cylinder. The electrostatic chuck is penetrated inside the cylinder. The distance between the cylinder and the electrostatic chuck is greater than or equal to 0 mm and less than or equal to 5 mm.

7. The lower electrode assembly according to claim 6, characterized in that: Also included is a base ring disposed around the electrostatic chuck and below the hot edge ring; The cylinder body penetrates into the inner ring of the base ring, and the base ring is used to support the ring body.

8. The lower electrode assembly according to claim 5, characterized in that: The width of the hot edge ring is 6%-15% of the radius of the electrostatic chuck.

9. The lower electrode assembly according to claim 5, characterized in that: The focusing ring and the hot edge ring are coaxially arranged, and the outer diameters of the focusing ring and the hot edge ring are the same, and the diameter of the inner ring of the hot edge ring is smaller than the diameter of the circumference of the side wall of the support groove.

10. A semiconductor process equipment, characterized in that: The invention comprises a process chamber and the lower electrode assembly according to any one of claims 1 to 9, wherein the lower electrode assembly is at least partially disposed in the process chamber.

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