Air inlet assembly, semiconductor process chamber and semiconductor process equipment

Abstract

The utility model discloses an air inlet assembly, a semiconductor process chamber and semiconductor process equipment, and the air inlet assembly comprises a cover plate which is provided with an air inlet, and the air inlet is used for communicating with a microwave generation cavity; the filtering part is arranged on the side, away from the microwave generation cavity, of the cover plate, the filtering part comprises a first area, the projection, on the filtering part, of the air inlet falls into the first area, and the first area is used for blocking light generated by the microwave generation cavity from passing through. The air inlet assembly has the function of filtering charged particles and ultraviolet light at the same time, a long guide pipe needed by a microwave system in traditional semiconductor process equipment can be omitted, and therefore the problems that the traditional semiconductor process equipment is too large in size and inconvenient to maintain are solved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to an air intake component, a semiconductor process chamber and semiconductor process equipment. Background Art

[0002] Isotropic etching is etching that is equal in all directions. This etching method allows etching to occur at the same rate in all areas not covered by the mask, resulting in rounded edges, such as Figure 1 As shown, Figure 1 This is a comparison chart of the effects before and after isotropic etching of a semiconductor structure.

[0003] An existing etching equipment includes a microwave system and a process chamber. The microwave system is used to generate plasma and filter the charged ions therein, and pass pure free radicals into the process chamber for etching. The components of the microwave system for filtering the charged ions need to occupy more space, thereby greatly increasing the volume of the etching equipment, which is not conducive to machine maintenance. Utility Model Content

[0004] In view of the above technical problems, the present application provides a semiconductor process chamber and a semiconductor process equipment, which can improve the problem that the existing semiconductor process equipment is too large and inconvenient to maintain due to the presence of overly long conduits.

[0005] In order to solve the above technical problems, in a first aspect, an embodiment of the present application provides an air intake assembly, comprising:

[0006] The cover plate is provided with an air inlet, and the air inlet is used to communicate with the microwave generating cavity;

[0007] A filter is arranged on a side of the cover plate away from the microwave generating cavity, the filter comprises a first area, the projection of the air inlet on the filter falls within the first area, and the first area is used to block the light generated by the microwave generating cavity from passing through.

[0008] Optionally, a flow-uniform cavity is formed between the filter element and the cover plate;

[0009] The filter element further includes a second region, which is disposed around the first region, and a first through hole for allowing a process gas to pass therethrough is disposed in the second region.

[0010] Optionally, the first area is a blocking entity without a through hole; or

[0011] A second through hole is provided in the first region, and the second through hole is a bent hole to block the light from passing through; or

[0012] A third through hole is disposed in the first region; the air intake assembly further comprises a baffle, which is disposed on a side of the third through hole away from the cover plate and is used to block the light from passing through.

[0013] Optionally, the second area is a centrally symmetrical figure, and the first area is located at the center of the centrally symmetrical figure.

[0014] Optionally, the figure formed by the first area and the second area is a square, and the four corners of the square are respectively a blank area where the first through hole is not set; and / or,

[0015] The first area is a square.

[0016] Optionally, the air intake assembly further includes:

[0017] An air inlet member is arranged on one side of the cover plate close to the microwave generating cavity, one end of the air inlet member is connected to the air inlet, and the other end is used to communicate with the microwave generating cavity, and the air inlet member is used to block the light generated by the microwave generating cavity from passing through while allowing the process gas to pass through.

[0018] Optionally, a fourth through hole is provided in the gas inlet member, and the fourth through hole is a bent hole, so as to block the light generated by the microwave generating cavity from passing through while allowing the process gas to pass through.

[0019] Optionally, the fourth through hole includes at least two hole segments connected end to end in sequence, and the hole segment close to the filter element is perpendicular to the first region, and the entirety formed by the remaining hole segments is bent relative to the hole segment close to the filter element.

[0020] In a second aspect, an embodiment of the present application provides a semiconductor process chamber, comprising a chamber body, and an air intake assembly as described in the above embodiments;

[0021] The chamber body is provided with an opening;

[0022] The cover plate is arranged at the opening;

[0023] The filter element is arranged opposite to the cover plate in the chamber body, and divides the inner space of the chamber body into a uniform flow chamber close to the cover plate and a process chamber far away from the cover plate.

[0024] In a third aspect, an embodiment of the present application further provides a semiconductor process equipment, including a microwave system and a semiconductor process chamber as described in the above embodiments;

[0025] The microwave generating cavity of the microwave system is connected to the chamber body through the air inlet.

[0026] Optionally, the air outlet of the microwave generating cavity is located directly above the air inlet of the air inlet assembly.

[0027] The air inlet assembly also includes an air inlet member, one end of which is connected to the air inlet, and the other end of which is used to connect to the microwave generating cavity. The air inlet member is used to block the light generated by the microwave generating cavity from passing through while allowing the process gas to pass through.

[0028] In the air intake assembly of the present application, plasma enters from the air intake port and is filtered by the filter element, which can filter out charged particles in the plasma. In addition, since the projection of the air intake port on the filter element falls into the first region, the first region can block the light generated by the microwave generating cavity from passing through, thereby simultaneously achieving the purpose of filtering light (especially ultraviolet light). The air intake assembly of the present application has the function of filtering charged particles and ultraviolet light at the same time, which can save the long conduit required by the microwave system in the traditional semiconductor process equipment, thereby solving the problem of excessive volume and inconvenient maintenance of the traditional semiconductor process equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The drawings herein are incorporated into the specification and constitute a part of the specification, illustrate embodiments consistent with the present application, and are used together with the specification to explain the principles of the present application. In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the description of the embodiments are briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without creative labor.

[0030] Figure 1 It is a comparison chart of the effects before and after isotropic etching of a semiconductor structure;

[0031] Figure 2 It is a structural schematic diagram of a semiconductor etching device of related technology;

[0032] Figure 3 is a structural schematic diagram of an air intake assembly provided in an embodiment of the present application;

[0033] Figure 4 is a schematic diagram of a top view of a filter element provided in an embodiment of the present application;

[0034] Figure 5 1 is a schematic diagram of the structure of the first region provided in an embodiment of the present application, wherein (a) is a second through hole provided in the first region, and (b) is a third through hole provided in the first region;

[0035] Figure 6 1 is a schematic diagram of the structure of an air intake member provided in an embodiment of the present application, wherein (a) is a bottom view and (b) is a top view;

[0036] Figure 7 is a schematic cross-sectional structural diagram of a fourth through hole provided in an embodiment of the present application;

[0037] Figure 8 It is a structural schematic diagram of a semiconductor process equipment provided by an embodiment of the present application;

[0038] Fig. 9 is along Figure 4 Schematic diagram of the cross-sectional structure along the AA line;

[0039] Fig.10 yes Figure 8 A schematic diagram of the enlarged structure of part B;

[0040] Fig.11 It is a flow velocity curve diagram corresponding to the prior art;

[0041] Fig.12 is the flow velocity curve diagram corresponding to this application;

[0042] Fig.13 It is a gas density curve corresponding to the prior art;

[0043] Fig.14 is the gas density graph corresponding to this application;

[0044] Fig.15 It is a gas pressure (static pressure) curve diagram corresponding to the prior art;

[0045] Fig.16 It is the gas pressure (static pressure) curve graph corresponding to this application.

[0046] The realization of the purpose, functional features and advantages of this application will be further described in conjunction with the embodiments and with reference to the accompanying drawings. The above-mentioned drawings have shown clear embodiments of this application, which will be described in more detail later. These drawings and textual descriptions are not intended to limit the scope of the concept of this application in any way, but to illustrate the concept of this application to those skilled in the art by referring to specific embodiments. DETAILED DESCRIPTION

[0047] Exemplary embodiments will be described in detail herein, examples of which are shown in the accompanying drawings. When the following description refers to the drawings, the same numbers in different drawings represent the same or similar elements unless otherwise indicated. The implementations described in the following exemplary embodiments do not represent all implementations consistent with the present application. Instead, they are merely examples of devices and methods consistent with some aspects of the present application as detailed in the appended claims.

[0048] It should be noted that, in this article, the terms "include", "comprises" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "includes a ..." does not exclude the existence of other identical elements in the process, method, article or device including the element. In addition, components, features, and elements with the same name in different embodiments of the present application may have the same meaning or different meanings, and their specific meanings need to be determined by their explanation in the specific embodiment or further combined with the context of the specific embodiment.

[0049] It should be further understood that the terms "comprising" and "including" indicate the presence of the described features, steps, operations, elements, components, items, kinds, and / or groups, but do not exclude the presence, occurrence or addition of one or more other features, steps, operations, elements, components, items, kinds, and / or groups. The terms "or", "and / or", "including at least one of the following", etc. used in this application may be interpreted as inclusive, or mean any one or any combination. For example, "including at least one of the following: A, B, C" means "any one of the following: A; B; C; A and B; A and C; B and C; A and B and C", and for another example, "A, B or C" or "A, B and / or C" means "any one of the following: A; B; C; A and B; A and C; B and C; A and B and C". Exceptions to this definition will only occur when the combination of elements, functions, steps or operations is inherently mutually exclusive in some way.

[0050] It should be understood that although the terms first, second, third, etc. may be used herein to describe various information, such information should not be limited to these terms. These terms are only used to distinguish information of the same type from each other. For example, without departing from the scope of this document, the first information may also be referred to as the second information, and similarly, the second information may also be referred to as the first information. Depending on the context, as used herein, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless otherwise indicated in the context.

[0051] It should be understood that the orientations or positional relationships indicated by terms such as "top", "bottom", "up", "down", "vertical", and "horizontal" are based on the orientations or positional relationships shown in the accompanying drawings and are only for the convenience of describing the present application and simplifying the description. They do not indicate or imply that the device referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0052] For ease of description, in the following embodiments, the orthogonal space formed by the horizontal plane and the vertical direction is used as an example for explanation, and this premise should not be understood as a limitation to the present application.

[0053] See also Figure 2 , Figure 2 It is a structural schematic diagram of a semiconductor etching device of the related technology, which includes a microwave system 10a, a semiconductor process chamber 20a, and a long conduit 30a connecting the microwave system 10a and the semiconductor process chamber 20a. The process gas is excited by the microwave system 10a to generate free radicals, and then passes through the long conduit 30a to neutralize the charged ions and enter the semiconductor process chamber 20a. The function of filtering out charged ions and ensuring the purity of free radicals is a key condition for meeting the "isotropic" etching process. In order to better remove charged ions in the process gas and ensure the purity of free radicals, the long conduit 30a is generally designed to be bent, and the length is usually more than 1000mm.

[0054] In the semiconductor etching equipment, the microwave system 10a needs to accommodate the overly long conduit 30a, which greatly increases the volume of the microwave system 10a, is not conducive to machine maintenance, and the bending degree of the long conduit will also cause the loss of free radicals and reduce the etching rate. Based on this, the present application provides an air intake assembly, a semiconductor process chamber and a semiconductor process equipment.

[0055] See also Figure 3 , Figure 3 1 is a schematic diagram of the structure of an air intake assembly provided in an embodiment of the present application. The air intake assembly may include a cover plate 10 and a filter element 20. The cover plate 10 of the air intake assembly is provided with an air inlet 11. The air inlet 11 is used to communicate with a microwave generating cavity 210. The microwave generating cavity 210 is a part of a microwave system and is used to excite process gas to form plasma. As an example, an air intake element 40 may also be provided at the air inlet 11 to connect to the microwave generating cavity 210. The filter element 20 is provided on a side of the cover plate 10 away from the microwave generating cavity 210 and may filter charged particles in the plasma. Please also refer to Figure 4 , Figure 4 It is a schematic diagram of a top view structure of a filter element provided in an embodiment of the present application. The filter element 20 may include a first area 21. The projection of the air inlet 11 on the filter element 20 falls into the first area 21. The first area 21 is used to block the light generated by the microwave generating cavity 210 from passing through.

[0056] It should be noted that the microwave source used to excite the process gas in the microwave generating cavity 210 will contain some ultraviolet light. After the ultraviolet light enters from the air inlet 11, it is blocked by the first area 21, which can prevent the unfiltered ultraviolet light from directly irradiating the surface of the wafer and causing the photosensitive adhesive on the surface of the wafer to react (for example, a hardening reaction). In the air intake assembly of the present application, the plasma enters from the air inlet 11 and is filtered by the filter 20, which can filter out the charged particles in the plasma. In addition, since the projection of the air inlet 11 on the filter 20 falls into the first area 21, the first area 21 can block the light generated by the microwave generating cavity 210 from passing through, thereby achieving the purpose of filtering ultraviolet light at the same time. The air intake assembly of the present application has the function of filtering charged particles and ultraviolet light at the same time, which can save the long conduit required for the microwave system in the traditional semiconductor process equipment, thereby solving the problem of large volume and inconvenient maintenance of the traditional semiconductor process equipment.

[0057] As an example of a filter element 20, please continue to refer to Figure 3 and Figure 4 A uniform flow chamber 120 is formed between the filter element 20 and the cover plate 10. The filter element 20 further includes a second region 22, which is arranged around the first region 21. A first through hole 51 is arranged in the second region 22, and the process gas can pass through the first through hole 51 to filter the charged particles. A plurality of first through holes 51 can be arranged and evenly distributed in the second region 22 to make the filtered gas more uniform.

[0058] As some examples of the first area 21 blocking the light generated by the microwave generating cavity 210 from passing through, for example, the first area 21 may be a blocking entity without a through hole, and the light is completely blocked by the first area 21 after entering from the air inlet 11. In addition, since there are some filter holes (such as the first through hole 51) on the filter element, its strength is reduced to a certain extent. If the airflow enters from the air inlet 11 and directly impacts the area with the filter holes, the filter element 20 may be broken. Therefore, the first area 21 may be a blocking entity without a through hole, which can avoid the above problem.

[0059] For example, see Figure 5 , Figure 5 is a schematic diagram of the structure of the first region provided in the embodiment of the present application. A second through hole 52 may also be provided in the first region 21. Figure 5 (a) in the figure, and the second through hole 52 is a bent hole to block the passage of light. For example, the second through hole 52 can be a smooth bent hole, or can be formed by connecting multiple straight holes at an angle, and after the light enters the second through hole 52, it is refracted and finally attenuated to a point where it does not affect the process.

[0060] For another example, a third through hole 53 may be provided in the first region 21, see Figure 5 (b) in the figure, the air intake assembly also includes a baffle 30, which is arranged on the side of the third through hole 53 away from the cover plate 10 to block the passage of light. The third through hole 53 can be a straight hole or a bent hole like the second through hole 52.

[0061] Preferably, in each embodiment of the present application, the second area 22 of the filter element 20 is a central symmetrical figure, and the first area 21 is located at the center of the central symmetrical figure. For example, the figure formed by the first area 21 and the second area 22 can be a polygon such as a quadrilateral or a pentagon, or can be a central symmetrical figure of other irregular shapes, which is not particularly limited in the embodiments of the present application. Through a strict symmetrical design, a more uniform airflow can be obtained, and the uniformity of etching can be improved.

[0062] As an example, see Figure 4 The pattern formed by the first region 21 and the second region 22 is a square, and the four corners of the square are blank areas 221 without the first through holes 51. By setting the blank areas 221, the etching rate of the four corners of the square can be prevented from being too fast, thereby improving the process uniformity. In addition, the first region 21 can also be a square, and the first through holes 51 can form an array in the second region 22. Figure 4 The number of the first through holes 51 is 324.

[0063] In one embodiment, the area difference between the square formed by the first region 21 and the second region 22 (first square) and the largest inscribed square (second square) of the wafer carrying surface of the semiconductor process equipment is less than 10%, that is, the first square can be equal to the area of ​​the second square, or slightly smaller, but the difference is preferably controlled within 10% to avoid a significant impact on process uniformity.

[0064] In one embodiment, please refer to Figure 3 The air inlet assembly may further include an air inlet member 40, which is disposed on one side of the cover plate 10 close to the microwave generating cavity 210, one end of the air inlet member 40 is connected to the air inlet port 11, and the other end is used to communicate with the microwave generating cavity 210, and the air inlet member 40 is used to block the light generated by the microwave generating cavity 210 from passing through while allowing the process gas to pass through. In this embodiment, light filtering is performed once before the gas enters the uniform flow cavity 120 to further enhance the filtering of light.

[0065] As an example, see Figure 6 and Figure 7 , Figure 6 : is a schematic diagram of the structure of an air intake member provided in an embodiment of the present application, wherein (a) is a bottom view, (b) is a top view, Figure 72 is a schematic diagram of a cross-sectional structure of a fourth through hole provided in an embodiment of the present application. A fourth through hole 54 is provided in the gas inlet member 40. The fourth through hole 54 is a bent hole, so as to allow the process gas to pass through while blocking the light generated by the microwave generating cavity 210 from passing through. The fourth through hole 54 has the same light blocking principle as the second through hole 52, and therefore, can have the same structure as the second through hole 52.

[0066] Preferably, the fourth through hole 54 includes at least two hole segments connected end to end in sequence, and the hole segment close to the filter element 20 is perpendicular to the first region 21, and the entirety formed by the remaining hole segments is bent relative to the hole segment close to the filter element 20. In this way, it can be ensured that the gas is emitted in a direction perpendicular to the first region 21, thereby improving the uniformity of the intake air.

[0067] Taking the fourth through hole 54 including two hole sections as an example, Figure 6 and Figure 7 The fourth through hole 54 includes a first hole section 541 and a second hole section 542. Figure 6 The second hole segment 412 in (b) does not show a complete circle due to the surface chamfering. The first hole segment 541 is arranged close to the filter element 20 and is perpendicular to the first area 21 of the filter element 20. The second hole segment 542 is located on the side away from the filter element 20 and is bent relative to the first hole segment 541. Figure 7 As shown, the second hole segment 542 is bent at an angle θ relative to the first hole segment 541 .

[0068] The air inlet 40 of this embodiment realizes the pressurization of the gas through the internal bend design of the fourth through hole 54, and can block the UV rays of the microwave system to avoid hardening of the photosensitive adhesive. As some examples, the air inlet 40 can be made of polytetrafluoroethylene material. A bracket 41 can also be provided, see Figure 3 The bracket 41 is connected to the outer periphery of the air intake member 40 . When the air intake member 40 is fitted into the air inlet 11 , the bracket 41 is supported on the top surface of the cover plate 10 , thereby fixing and limiting the air intake member 40 .

[0069] In one embodiment, the present application also provides a semiconductor process chamber, see Figure 8 , Figure 8 1 is a schematic diagram of the structure of a semiconductor process equipment provided by an embodiment of the present application. The semiconductor process chamber of the present application can be applied to the semiconductor process equipment. The semiconductor process chamber can include a chamber body 100 and an air intake assembly as described in the above embodiments. An opening 110 is provided on the chamber body 100, and a cover plate 10 is provided at the opening 110. The filter element 20 is arranged opposite to the cover plate 10 in the chamber body 100, and divides the internal space of the chamber body 100 into a uniform flow chamber 120 close to the cover plate 10 and a process chamber 130 away from the cover plate 10.

[0070] The uniform flow chamber 120 is connected to the microwave generating chamber 210 through the air inlet 11. The filter element 20 is provided with a plurality of first through holes 51 connecting the uniform flow chamber 120 and the process chamber 130. The first through holes 51 are used to filter the charged particles in the plasma. For example, the filter element 20 can be electrically connected to the chamber body 100 and grounded through the chamber body 100 to neutralize the charged particles in the plasma. The filter element 20 can be made of conductive materials such as aluminum.

[0071] The working principle of the semiconductor process chamber of this embodiment is as follows: plasma enters the uniform flow chamber 120 from the air inlet 11, and then enters the first through hole 51 of the filter element, and the charged particles in the plasma collide with the hole wall in the first through hole 51, thereby neutralizing the charged ions; in addition, the first area 21 of the filter element 20 can block the light in the microwave source, which can not only prevent UV from re-exciting the charged ions, but also prevent UV from reaching the process chamber and causing PR hardening. In the semiconductor process chamber of this embodiment, the air inlet component has the function of filtering charged particles and ultraviolet light at the same time, which can save the long conduit required for the microwave system in the traditional semiconductor process equipment, thereby solving the problem of large volume and inconvenient maintenance of the traditional semiconductor process equipment.

[0072] In order to ensure that the filter element 20 filters out charged ions as completely as possible, an "isotropic" etching process is implemented. According to the ion mean free path principle, in order to ensure that ions and electrons fully recombine, it is necessary to increase the collision probability between electrons and ions, that is, to reduce the aperture of the first through hole 51 and increase the depth of the first through hole 51. In one embodiment, the aperture of the first through hole 51 is can be less than or equal to 2T (T is the thickness of the plasma sheath), and the depth of the first through hole 51 is greater than or equal to This ensures that the charged ions are almost completely filtered out. Taking the process pressure as 0.1 torr as an example, the depth of the first through hole 51 is preferably set to be greater than or equal to 9 mm.

[0073] In one embodiment, see Figure 4 and Fig. 9 , Fig. 9 is along Figure 4 In the cross-sectional structural diagram of the middle AA line, the filter element 20 may include a charged ion filter plate 23 and an annular side wall 24, and the first through hole 51 is provided on the charged ion filter plate 23. The annular side wall 24 is arranged around the charged ion filter plate 23, and the top surface of the annular side wall 24 is provided with a flange 241 protruding outward, and the flange 241 is supported on the side wall of the chamber body 100, and the area between the cover plate 10 and the charged ion filter plate 23 is a uniform flow chamber 120.

[0074] The flange 241 may be supported on the top surface of the side wall of the chamber body 100, or a groove 101 may be provided on the side wall of the chamber body 100, see Fig.10 , Fig.10 yes Figure 8 In the enlarged structural diagram of part B, the flange 241 is fitted into the groove 101 , so that the filter element 20 does not protrude from the chamber body 100 .

[0075] Please continue reading Figure 8 The embodiment of the present application also provides a semiconductor process equipment, including a microwave system 200, and a semiconductor process chamber as described in the above embodiments; the microwave generating cavity 210 of the microwave system 200 is connected to the chamber body 100 through the air inlet 11. The microwave system 200 excites the process gas, and inputs the excited process gas into the uniform flow cavity 120 through the air inlet 11. In addition, a chuck 140 can be set directly below the filter element 20 in the semiconductor process chamber, and the wafer is fixed on the chuck 140 during the process. In this embodiment, the microwave system 200 does not need to accommodate a long conduit, which can reduce the overall volume of the semiconductor process equipment, has a simple structure, and is easy to maintain.

[0076] For other working principles and processes of the semiconductor process chamber and semiconductor process equipment of this embodiment, please refer to the description of the air intake component in the aforementioned embodiment of the present application, which will not be repeated here.

[0077] Below Figure 2 (Prior Art) and Figure 8 The semiconductor process equipment of the present application is respectively subjected to simulation experiments, wherein the first through hole 51 of the present application adopts Figure 4 The shape arrangement shown has a total of 324 first through holes 51 , each of which has a diameter of 3 mm and a depth of 9 mm. Simulation data is collected on a plane 1 mm away from the surface of the chuck 140 .

[0078] The simulation results can be found in Figure 11-Figure 16 And Table 1. Among them, Fig.11 is the flow velocity curve corresponding to the prior art, Fig.12 is the flow velocity curve corresponding to this application, Fig.13 is the gas density curve corresponding to the prior art, Fig.14 is the gas density curve corresponding to this application, Fig.15 It is the gas pressure (static pressure) curve corresponding to the prior art, Fig.16 It is the gas pressure (static pressure) curve graph corresponding to this application.

[0079] Table 1 Simulation data summary

[0080]

[0081] For the above three indicators, the larger the mean flow rate, the faster the etching rate; the smaller the flow rate variation coefficient, the better the process uniformity; the smaller the static pressure mean, the stronger the pressure control ability; the larger the density mean, the higher the gas utilization rate.

[0082] The simulation experiment results show that compared with the prior art, the flow velocity mean of the present application is larger, the flow velocity variation coefficient is smaller, the static pressure mean is smaller, and the density mean is larger. Therefore, the semiconductor process equipment of the present application has better performance than the prior art.

[0083] The above is a detailed introduction to an air intake assembly, a semiconductor process chamber, and a semiconductor process equipment provided by the present application. This article uses specific examples to illustrate the principles and implementation methods of the present application. It should be noted that in the present application, the descriptions of each embodiment have their own emphasis. For parts that are not described or recorded in detail in a certain embodiment, please refer to the relevant descriptions of other embodiments.

[0084] The above are only preferred embodiments of the present application, and the patent scope of the present application is not limited thereto. The various technical features of the technical solution of the present application can be arbitrarily combined. In order to make the description concise, not all possible combinations of the various technical features in the above embodiments are described. Any equivalent structure or equivalent process transformation made using the contents of the specification and drawings of this application, or directly or indirectly used in other related technical fields, as long as there is no contradiction in the combination of these technical features, are equally included in the patent protection scope of the present application.

Claims

1. An air intake assembly, characterized in that: include: The cover plate is provided with an air inlet, and the air inlet is used to communicate with the microwave generating cavity; A filter is arranged on a side of the cover plate away from the microwave generating cavity, the filter comprises a first area, the projection of the air inlet on the filter falls within the first area, and the first area is used to block the light generated by the microwave generating cavity from passing through.

2. The air intake assembly according to claim 1, characterized in that: A flow-uniform cavity is formed between the filter element and the cover plate; The filter element further includes a second region, which is disposed around the first region, and a first through hole for allowing a process gas to pass therethrough is disposed in the second region.

3. The air intake assembly according to claim 2, characterized in that: The first area is a blocking entity without a through hole; or A second through hole is provided in the first region, and the second through hole is a bent hole to block the light from passing through; or A third through hole is disposed in the first region; the air intake assembly further comprises a baffle, which is disposed on a side of the third through hole away from the cover plate and is used to block the light from passing through.

4. The air intake assembly according to claim 2, characterized in that: The second area is a centrally symmetrical figure, and the first area is located at the center of the centrally symmetrical figure.

5. The air intake assembly according to claim 4, characterized in that: The figure formed by the first area and the second area is a square, and the four corners of the square are blank areas where the first through hole is not provided; and / or, The first area is a square.

6. The air intake assembly according to any one of claims 1 to 5, characterized in that: Also includes: An air inlet member is arranged on one side of the cover plate close to the microwave generating cavity, one end of the air inlet member is connected to the air inlet, and the other end is used to communicate with the microwave generating cavity, and the air inlet member is used to block the passage of light generated by the microwave generating cavity while allowing process gas to pass through.

7. The air intake assembly according to claim 6, characterized in that: A fourth through hole is provided in the gas inlet member, and the fourth through hole is a bent hole, so as to block the light generated by the microwave generating cavity from passing through while allowing the process gas to pass through.

8. The air intake assembly according to claim 7, characterized in that: The fourth through hole includes at least two hole segments connected end to end in sequence, and the hole segment close to the filter element is perpendicular to the first region, and the rest of the hole segments are bent relative to the hole segment close to the filter element.

9. A semiconductor process chamber, characterized in that: It comprises a chamber body and an air intake assembly according to any one of claims 1 to 8; The chamber body is provided with an opening; The cover plate is arranged at the opening; The filter element is arranged opposite to the cover plate in the chamber body, and divides the inner space of the chamber body into a uniform flow chamber close to the cover plate and a process chamber far away from the cover plate.

10. A semiconductor process equipment, characterized in that: A microwave system and a semiconductor process chamber as claimed in claim 9; The microwave generating cavity of the microwave system is connected to the chamber body through the air inlet.

11. The semiconductor process equipment according to claim 10, characterized in that: The air outlet of the microwave generating cavity is located directly above the air inlet of the air inlet assembly. The air inlet assembly also includes an air inlet member, one end of which is connected to the air inlet, and the other end of which is used to connect to the microwave generating cavity. The air inlet member is used to block the passage of light generated by the microwave generating cavity while allowing the process gas to pass through.

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