Semiconductor process equipment and bearing device thereof

By designing the heat dissipation air channels and conveying channels of multiple regular polygonal airways in the carrier device of the semiconductor process equipment, the problem of insufficient temperature control of the electrostatic chuck is solved, and more uniform wafer temperature control and process size uniformity are achieved.

CN222734946UActive Publication Date: 2025-04-08BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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Patent Information

Application Number
CN202421265618.6
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-06-04
Publication Date
2025-04-08
Estimated Expiration
2034-06-04

AI Technical Summary

Technical Problem

The temperature uniformity of existing electrostatic chucks is insufficient during the etching process, which affects the uniformity of process size.

Method used

A carrier device for semiconductor process equipment is designed, including a body and a gas channel distributed in the body. The gas channel includes a heat dissipation air channel and a transport channel. The heat dissipation air channel is composed of a plurality of sub-airways of the same length to form a plurality of regular polygonal air channels, and the transport channel is used to transport heat dissipation gas to the heat dissipation air channel.

Benefits of technology

Through this design, the temperature control uniformity of the wafer surface can be improved, the uniformity of process size can be ensured, and the overall performance of semiconductor process equipment can be improved.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model provides semiconductor process equipment and a bearing device thereof, the bearing device comprises a body and a gas channel distributed in the body, the gas channel comprises a heat dissipation gas channel and a conveying channel, the heat dissipation gas channel is arranged on the bearing surface of the body, and the conveying channel conveys heat dissipation gas to the heat dissipation gas channel; the heat dissipation air channel comprises a plurality of sub air channels with the same length, the ends of the sub air channels are connected to form a plurality of regular polygon air channels with the same shape, the regular polygon air channels are distributed on the bearing face, and at least part of the regular polygon air channels are provided with air inlets. An air outlet of the conveying channel is connected with an air inlet of the regular polygon air channel. The regular polygon air channel can dissipate heat of one area, the lengths of all the sub air channels are equal, the heat dissipation gas flow of all the sub air channels is equal, and the temperature control uniformity of the corresponding area can be improved. The regular polygon air channels are the same in shape, the regular polygon air channels are distributed on the bearing face, the regular polygon air channels are used for heat dissipation of the corresponding areas, and therefore the temperature control uniformity of the body is improved.
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Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing, and in particular, to a semiconductor process equipment and a carrier device thereof. Background Art

[0002] Plasma devices are widely used in the manufacturing process of integrated circuits or MEMS (MicroelectroMechanical Systems) devices. The etching process involves very complex chemical and physical processes. Plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules and free radicals. These active particles reach the surface of the wafer through the radio frequency, interact with the wafer, and cause various physical and chemical reactions on the surface of the material, thereby changing the surface properties of the material.

[0003] The electrostatic chuck (ESC) is used to support the wafer in the etching chamber and control the temperature of the wafer. There is a gas flow between the electrostatic chuck and the wafer to remove excess heat from the wafer to achieve the function of regulating the wafer temperature. There is an air channel on the back of the ESC to circulate the above gas. Different designs of the air channel will affect the distribution of the gas and thus affect the temperature control uniformity of the ESC and the uniformity of the process size.

[0004] Therefore, how to improve the temperature control uniformity of the electrostatic chuck is a technical problem that technicians in this field need to solve urgently. Utility Model Content

[0005] The present application aims to solve at least one of the technical problems existing in the prior art, and proposes a semiconductor process equipment and a carrier device thereof, which can improve the temperature control uniformity of the carrier device.

[0006] In order to achieve the purpose of the present application, a carrier device is provided for semiconductor process equipment, comprising a body and gas channels distributed in the body, wherein:

[0007] The body has a bearing surface for supporting a wafer;

[0008] The gas channel includes a heat dissipation air channel and a delivery channel, the heat dissipation air channel is arranged on the bearing surface, and the delivery channel is used to deliver heat dissipation gas to the heat dissipation air channel;

[0009] The heat dissipation air channel comprises a plurality of sub-air channels of the same length, the ends of the sub-air channels are connected to form a plurality of regular polygonal air channels of the same shape, the plurality of regular polygonal air channels are distributed on the bearing surface, and at least some of the regular polygonal air channels have air inlets;

[0010] The air outlet of the delivery channel is connected to the air inlet of the regular polygonal airway.

[0011] In some embodiments, the heat dissipation air duct includes at least two regular polygonal air duct groups, each regular polygonal air duct of the same regular polygonal air duct group is arranged around the axis of the body, and each regular polygonal air duct group is arranged in sequence from the axis to the edge of the body.

[0012] In some embodiments, the regular polygonal airway group has a plurality of air inlets, each of the air inlets of the same regular polygonal airway group is at an equal distance from the axis of the body and is evenly distributed around the axis of the body, and the air inlets of different regular polygonal airway groups are at different distances from the axis of the body;

[0013] The number of the delivery channels is equal to the number of the regular polygonal airway groups and corresponds one to one. The air outlets of the delivery channels are connected to the air inlets of the corresponding regular polygonal airway groups.

[0014] In some embodiments, the delivery channel includes an air inlet channel and multiple air delivery channels, each of the air delivery channels is respectively connected to each air inlet of the corresponding regular polygonal airway group, the air inlet of each air delivery channel is connected to the air outlet of the air inlet channel, the air inlet of the air inlet channel is used to connect to an air source, and the lengths of each of the air delivery channels are equal.

[0015] In some embodiments, the regular polygonal airway group includes a first regular polygonal airway group and a second regular polygonal airway group, and the delivery channel includes a first delivery channel and a second delivery channel.

[0016] The body comprises a first body layer, a second body layer and a third body layer which are stacked, and the first regular polygonal air channel group and the second regular polygonal air channel group are arranged on the upper surface of the first body layer;

[0017] The first delivery channel includes a first air inlet channel and a first air delivery channel, the first air inlet channel and the first air delivery channel are arranged in the second body layer, and the first air delivery channel is connected to the first regular polygonal air channel group;

[0018] The second delivery channel includes a second air inlet channel and a second air delivery channel, the second air inlet channel and the second air delivery channel are arranged in the third body layer, and the second air delivery channel is connected to the second regular polygonal air channel group.

[0019] In some embodiments, the first delivery channel further includes a plurality of first connecting channels, the air outlet of the first air inlet channel is located on the axis of the body, the air inlet of each of the first air delivery channels is connected to the air outlet of the first air inlet channel, the air inlet of each of the first connecting channels is respectively connected to the air outlet of each of the first air delivery channels, and each of the first connecting channels passes through the first body layer and is connected to each of the air inlets of the first regular polygonal air channel group, and / or,

[0020] The second delivery channel also includes multiple second connecting channels, the air outlet of the second air inlet channel is located on the axis of the body, the air inlet of each of the second air delivery channels is connected to the air outlet of the second air inlet channel, the air inlet of each of the second connecting channels is respectively connected to the air outlet of each of the second air delivery channels, and each of the second connecting channels passes through the second body layer and the first body layer, and is connected to the air inlet of the second regular polygonal airway group.

[0021] In some embodiments, the regular polygonal air channel is a regular hexagonal air channel, and two adjacent regular hexagonal air channels in the heat dissipation air channel share one sub-air channel.

[0022] In some embodiments, the heat dissipation air duct includes a first hexagonal air duct group, the first hexagonal air duct group includes three first hexagonal air ducts, the three first hexagonal air ducts have a first common vertex distribution, the first common vertex is on the axis of the main body, the sub-air duct shared by two adjacent first hexagonal air ducts is the first common air duct, and the three air inlets of the first hexagonal air duct group are respectively located at one end of the three first common air ducts away from the first common vertex.

[0023] In some embodiments, the heat dissipation air duct also includes a second hexagonal air duct group, the second hexagonal air duct group includes nine second hexagonal air ducts, the nine second hexagonal air ducts are arranged around three first hexagonal air ducts, the second hexagonal air ducts and the adjacent first hexagonal air ducts have a common vertex and the sub-air duct, and the three air outlets of the second hexagonal air duct group are respectively located at the vertices of the three first hexagonal air ducts away from the first common vertex.

[0024] The present application also provides a semiconductor process equipment, including a gas source, a process chamber and any one of the above-mentioned carrier devices, wherein the carrier device is arranged in the process chamber, and the gas source is connected to the gas channel of the carrier device for conveying heat dissipation gas to the gas channel.

[0025] In some embodiments, a speed regulating mechanism is further included, wherein the speed regulating mechanism is connected to the delivery channel and is used to control the flow rate of the heat dissipation gas delivered by the delivery channel.

[0026] This application has the following beneficial effects:

[0027] The carrier device provided in the present application is used for semiconductor process equipment, comprising a body and gas channels distributed in the body, wherein:

[0028] The body has a bearing surface for supporting the wafer;

[0029] The gas channel includes a heat dissipation channel and a delivery channel. The heat dissipation channel is arranged on the bearing surface, and the delivery channel is used to deliver heat dissipation gas to the heat dissipation channel.

[0030] The heat dissipation air channel comprises a plurality of sub-air channels of the same length, the ends of the sub-air channels are connected to form a plurality of regular polygonal air channels of the same shape, the plurality of regular polygonal air channels are distributed on the bearing surface, and at least some of the regular polygonal air channels have air inlets;

[0031] The air outlet of the conveying channel is connected with the air inlet of the regular polygonal airway.

[0032] The regular polygonal air channel can dissipate heat for an area. The lengths of the sub-air channels in the regular polygonal air channel are equal, and the heat dissipation gas flow of each sub-air channel is equal, thereby improving the uniformity of temperature control in the corresponding area. The regular polygonal air channels have the same shape, and multiple regular polygonal air channels are distributed on the bearing surface. Each regular polygonal air channel dissipates heat for the corresponding area, thereby improving the uniformity of temperature control of the body.

[0033] Another object of the present application is to provide a semiconductor process equipment comprising the above-mentioned carrier device and having the above-mentioned advantages. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 A schematic diagram of the structure of a carrying device provided in a specific embodiment of the present application;

[0035] Figure 2 for Figure 1 A top view of the middle load-bearing device;

[0036] Figure 3 for Figure 1 A schematic diagram of the structure of the first body layer;

[0037] Figure 4 for Figure 1 Schematic diagram of the structure of the second body layer;

[0038] Figure 5 for Figure 1 Schematic diagram of the structure of the third body layer;

[0039] Figure 6 for Figure 1 Bottom view of the middle load-bearing device.

[0040] in, Figures 1 to 6 The reference numerals in the drawings are:

[0041] 100, main body; 101, first main body layer; 102, second main body layer; 103, third main body layer; 104, ejector pin hole; 105, RF feed hole; 200, heat dissipation air channel; 201, sub-air channel; 210, first hexagonal air channel; 211, first sub-air inlet; 220, second hexagonal air channel; 221, second sub-air inlet; 300, delivery channel; 310, first delivery channel; 311, first air delivery channel; 312, first air inlet channel; 313, first central air inlet; 314, first total air inlet; 315, first connecting channel; 320, second delivery channel; 321, second air delivery channel; 322, second air inlet channel; 323, second central air inlet; 324, second total air inlet; 325, second connecting channel. DETAILED DESCRIPTION

[0042] In order to enable those skilled in the art to better understand the technical solution of the present application, the semiconductor process equipment and the carrier device thereof provided by the present application are described in detail below in conjunction with the accompanying drawings.

[0043] The supporting device provided in the present application includes a main body 100 and a gas channel distributed in the main body 100. The main body 100 has a supporting surface for supporting the wafer. The gas channel includes a heat dissipation air channel 200 and a conveying channel 300. The heat dissipation air channel 200 is arranged on the supporting surface, and the conveying channel 300 is used to convey heat dissipation gas to the heat dissipation air channel 200.

[0044] The heat dissipation air channel 200 is a groove formed on the upper surface of the body 100, and the notch of the heat dissipation air channel 200 faces upward. During the process, the wafer is placed on the body 100 and covers the heat dissipation air channel 200. The delivery channel 300 is arranged inside the body 100 and communicated with the heat dissipation air channel 200, and is used to deliver heat dissipation gas to the heat dissipation air channel 200. After the heat dissipation gas enters the heat dissipation air channel 200, it flows in the heat dissipation air channel 200, so as to be evenly distributed in the heat dissipation air channel 200, and enters between the wafer and the upper surface of the body 100 through the heat dissipation air channel 200, contacts and exchanges heat with the wafer, thereby taking away the heat of the wafer.

[0045] The heat dissipation air duct 200 includes multiple sub-air ducts 201 of the same length, and the ends of each sub-air duct 201 are connected to form multiple regular polygonal air ducts of the same shape. The multiple regular polygonal air ducts are distributed on the bearing surface, and at least some of the regular polygonal air ducts have air inlets; the air outlet of the delivery channel 300 is connected to the air inlet of the regular polygonal air duct.

[0046] Multiple sub-air channels 201 are connected end to end to form a regular polygonal air channel. Multiple sub-air channels 201 can be connected to form a regular polygonal air channel. The regular polygonal heat dissipation air channel 200 can be distributed more evenly on the upper surface of the body 100, which can improve the uniformity of the distribution of the sub-air channels 201 on the upper surface of the body 100. The regular polygonal air channel can be a regular triangle heat dissipation air channel, a square heat dissipation air channel or a regular hexagonal heat dissipation air channel, etc. Regular triangles, squares and regular hexagons can be arranged more neatly, which increases the proportion of the distribution range of the heat dissipation air channel 200 on the upper surface of the body 100 to the upper surface of the body 100. A higher proportion means a larger heat dissipation gas flow rate, which can better complete the heat dissipation of the body 100.

[0047] At least some of the regular polygonal airways have air inlets, so the heat dissipation airway 200 has multiple air inlets. The delivery channel 300 is connected to the heat dissipation airway 200 at multiple points to deliver heat dissipation gas to the delivery heat dissipation airway 200. By adjusting the distribution of the air inlets of the heat dissipation airway 200, each air inlet can correspond to a number of regular polygonal airways, thereby improving the uniformity of the heat dissipation gas distribution in each regular polygonal airway. The heat dissipation gas flow rate of each regular polygonal airway is roughly equal, and the lengths of the sub-airways 201 of the regular polygonal airway are equal, so the flow rate of the heat dissipation gas flowing out of each sub-airway 201 is also roughly equal, which can further improve the uniformity of the temperature control of the main body 100.

[0048] The heat dissipation air channel 200 includes at least two regular polygonal air channel groups. Each regular polygonal air channel of the same regular polygonal air channel group is arranged around the axis of the body 100 , and each regular polygonal air channel group is arranged in sequence from the axis to the edge of the body 100 .

[0049] like Figure 2 In the specific embodiment shown, two layers of regular polygonal air channels are surrounded by the outer circumference of the axis of the body 100. The user can set the number of layers of regular polygonal air channels as needed, which is not limited here.

[0050] Each regular polygonal airway in the regular polygonal airway group is arranged around the axis of the main body 100, that is, each regular polygonal airway in the regular polygonal airway group is distributed in the circumferential direction of the main body 100, which can improve the uniformity of circumferential heat dissipation of the main body 100. Moreover, at least two regular polygonal airway groups are arranged in sequence from the axis to the edge of the main body 100, that is, each regular polygonal airway group dissipates heat to each area in the radial direction of the main body 100, which can improve the uniformity of heat dissipation in the radial direction of the main body 100. Therefore, the distribution method of the regular polygonal airway group in this embodiment can improve the uniformity of heat dissipation of the entire bearing surface of the main body 100. Of course, the user can also set the distribution method of the regular polygonal airway as needed, for example, a regular polygonal airway can be set in the center of the bearing surface, and the remaining regular polygonal airways form at least two regular polygonal airway groups, and each regular polygonal airway group is arranged around the central regular polygonal airway, which is not limited here.

[0051] The regular polygonal airway group has a plurality of air inlets, and the air inlets of the same regular polygonal airway group are at equal distances from the axis of the body 100 and are evenly distributed around the axis of the body 100, while the air inlets of different regular polygonal airway groups are at different distances from the axis of the body 100;

[0052] The number of the delivery channels 300 is equal to the number of the regular polygonal airway groups and corresponds one to one. The air outlets of the delivery channels 300 are connected to the air inlets of the corresponding regular polygonal airway groups.

[0053] The delivery channel 300 delivers heat dissipation gas to each air inlet of the corresponding regular polygonal airway group, and each air inlet of the same regular polygonal airway group is at an equal distance from the axis of the body 100 and is evenly distributed around the axis of the body 100. By delivering the same flow of heat dissipation gas to each air inlet, it is possible to ensure that the heat dissipation gas is evenly distributed in the circumferential direction of the area corresponding to the regular polygonal airway group. The heat dissipation gas is evenly distributed in the circumferential direction of the area corresponding to each regular polygonal airway group, so that the heat dissipation gas can be evenly distributed on the entire bearing surface, thereby improving the uniformity of temperature control of the body 100.

[0054] In some embodiments, the delivery channel 300 includes an air inlet channel and multiple air delivery channels, the air outlet of each air delivery channel is respectively connected to the air inlets of the corresponding regular polygonal airway group, the air inlet of each air delivery channel is connected to the air outlet of the air inlet channel, the air inlet of the air inlet channel is used to connect to the air source, and the lengths of each air delivery channel are equal.

[0055] Each air inlet of the same regular polygonal air channel group is at an equal distance from the axis of the main body 100. The air outlets of each air delivery channel of the delivery channel 300 are respectively connected to the air inlets of the corresponding regular polygonal air channel group. Moreover, the lengths of each air delivery channel are equal, and the resistance of the heat dissipation gas when flowing in each heat dissipation air channel is equal. Therefore, as long as the flow rate of the heat dissipation gas entering each air delivery channel is equal, the flow rate of the heat dissipation gas flowing out of each air inlet of the same regular polygonal air channel group can be guaranteed to be equal. And because the air inlet of each air delivery channel is connected to the air outlet of the air inlet channel, the air outlet of the air inlet channel delivers heat dissipation gas to each air delivery channel at the same pressure, thereby ensuring that the flow rate of the heat dissipation gas entering each air delivery channel is equal, thereby ensuring the uniformity of the temperature control of the main body 100.

[0056] In some embodiments, the regular polygonal airway group includes a first regular polygonal airway group and a second regular polygonal airway group, and the delivery channel includes a first delivery channel 310 and a second delivery channel 320;

[0057] The body 100 includes a first body layer 101 , a second body layer 102 and a third body layer 103 which are stacked. The first regular polygonal air channel group and the second regular polygonal air channel group are arranged on the upper surface of the first body layer 101 , ie, the bearing surface.

[0058] The first delivery channel 310 includes a first air inlet channel 312 and a first air delivery channel 311, the first air inlet channel 312 and the first air delivery channel 311 are arranged in the second body layer 102, and the first air delivery channel 311 is connected to the first regular polygon air channel group;

[0059] The second delivery channel 320 includes a second air inlet channel 322 and a second air delivery channel 321 . The second air inlet channel 322 and the second air delivery channel 321 are arranged in the third body layer 103 . The second air delivery channel 321 is connected to the second regular polygon air channel group.

[0060] like Figure 1 and Figure 3 As shown, the first body layer 101 is located at the top, the third body layer 103 is located at the bottom, and the second body layer 102 is located between the first body layer 101 and the second body layer 102. The first regular polygonal air channel group and the second regular polygonal air channel group are both arranged on the upper surface of the first body layer 101, and the upper surface of the first body layer 101 is the bearing surface. Figure 4 As shown, the first air inlet channel 312 and the first air delivery channel 311 are arranged in the second body layer 102, and the first air delivery channel 311 is connected to the first regular polygonal air channel group to deliver process gas to the first regular polygonal air channel group. Figure 5 As shown, the second air inlet channel 322 and the second air delivery channel 321 are arranged in the third body layer 103, and the second air delivery channel 321 is connected to the second regular polygonal air channel group to deliver process gas to the second regular polygonal air channel group. The lengths of the first air delivery channels 311 are equal, so that the heat dissipation gas can be delivered to the air inlets of the first regular polygonal air channel group at the same flow rate, which can improve the uniformity of the distribution of the heat dissipation gas in the first regular polygonal air channel group. The lengths of the second air delivery channels 321 are equal, so that the heat dissipation gas can be delivered to the air inlets of the second regular polygonal air channel group at the same flow rate, which can improve the uniformity of the distribution of the heat dissipation gas in the second regular polygonal air channel group. Further, by controlling the flow rate of the heat dissipation gas in the first air inlet channel 312 and the second air inlet channel 322, the flow rate of the heat dissipation gas entering the first regular polygonal air channel group and the second regular polygonal air channel group can be controlled, so that the heat dissipation gas distribution of the first regular polygonal air channel group and the heat dissipation gas distribution of the second regular polygonal air channel group are roughly equal, thereby improving the uniformity of the distribution of the heat dissipation gas on the bearing surface. Of course, the main body 100 can be configured according to the structure of the gas channel, which is not limited here.

[0061] Optionally, the first body layer 101, the second body layer 102 and the third body layer 103 may be connected by brazing. The heat dissipation channel, the first delivery channel and the second delivery channel are arranged in layers, which can reduce the processing difficulty of the gas channel and reduce the manufacturing cost.

[0062] In some embodiments, the first delivery channel also includes multiple first connecting channels 315, the first air inlet channel 312 and the first air delivery channel 311 are arranged in the second main body layer 102, the air outlet of the first air inlet channel 312 is located on the axis of the main body 100, the air inlet of each first air delivery channel 311 is connected to the air outlet of the first air inlet channel 312, the air inlet of each first connecting channel 315 is respectively connected to the air outlet of each first air delivery channel 311, and each first connecting channel 315 passes through the first main body layer 101 and is connected to each air inlet of the first regular polygonal airway group.

[0063] Optional, such as Figure 4 As shown, the air inlet of the first air inlet channel 312 is the first total air inlet 314. The first total air inlet 314 extends from the first air inlet channel 312 through the third body layer 103 to the lower surface of the third body layer 103, and is then connected to the air source. The air outlet of the first air inlet channel 312 is used as the first central air inlet 313. The first central air inlet 313 is located on the axis of the body 100. The air inlets of the three first air delivery channels 311 are all connected to the first central air inlet 313. Each air inlet of the first regular polygonal air channel group is a first sub-air inlet 211. The first connecting channel 315 is connected to the first sub-air inlet 211 through the first body layer 101 by the first delivery channel 310. The heat dissipation gas enters the three first sub-air inlets 211 of the first regular polygonal air channel group through the first air inlet channel 312, the three first air delivery channels 311 and the first connecting channel 315 in sequence.

[0064] Optionally, the second delivery channel also includes multiple second connecting channels 325, the second air inlet channel 322 and the second air delivery channel 321 are arranged on the third main body layer 103, the air outlet of the second air inlet channel 322 is located on the axis of the main body 100, the air inlet of each second air delivery channel 321 is connected to the air outlet of the second air inlet channel 322, the air inlet of each second connecting channel 325 is connected to the air outlet of each second air delivery channel 321, and each second connecting channel 325 passes through the first main body layer 101 and the second main body layer 102, thereby being connected to each air inlet of the second regular polygonal airway group.

[0065] Optional, such as Figure 5As shown, the air inlet of the second air inlet channel 322 is the second total air inlet 324, and the second total air inlet 324 extends from the second air inlet channel 322 to the lower surface of the third body layer 103, and is then connected to the air source. The air outlet of the second air inlet channel 322 is used as the second central air inlet 323, and the second central air inlet 323 is located on the axis of the body 100. The air inlets of the three second air delivery channels 321 are all connected to the second central air inlet 323. Each air inlet of the second regular polygonal air channel group is a second sub-air inlet 221. The second connecting channel 325 passes through the first body layer 101 and the second body layer 102 from the second delivery channel 320 to connect the second sub-air inlet 221. The heat dissipation gas enters the three second sub-air inlets 221 of the second regular polygonal air channel group through the second air inlet channel 322, the three second air delivery channels 321 and the second connecting channel 325 in sequence.

[0066] Optionally, the regular polygonal airway is a regular hexagonal airway, and two adjacent regular hexagonal airways share a sub-airway 201. In the two embodiments using regular triangles and squares, the number of sub-channels connected to one intersection is 6 and 4 respectively. Figure 1 As shown, two adjacent regular hexagonal air channels share a sub-air channel 201, and the regular hexagonal air channels are arranged on the upper surface of the body 100 to form a honeycomb structure. In this embodiment, the number of sub-channels connected to one intersection is 3. Obviously, in the embodiment of the regular hexagonal air channel, the structure of the heat dissipation air channel 200 is simpler and easier to process. On the premise of meeting the heat dissipation requirements, the regular hexagonal air channel can reduce the difficulty of processing the body 100.

[0067] In some embodiments, the heat dissipation air channel 200 includes a first hexagonal air channel group, the first hexagonal air channel group includes three first hexagonal air channels 210, the three first hexagonal air channels 210 have a first common vertex, and the first common vertex is on the axis of the body 100. The sub-air channel shared by two adjacent first hexagonal air channels 210 is the first common air channel, and the three air inlets of the first hexagonal air channel group are respectively located at one end of the three first common air channels away from the first common vertex.

[0068] The three first hexagonal air channels 210 can form three regions around the axis of the body 100, the areas of the three regions are equal, the air inlet positions of the regions corresponding to the three first hexagonal air channels 210 are the same, and the heat dissipation gas flow rates entering the three regions are also equal, so that the distribution of the heat dissipation gas in the three regions is roughly the same. The three regions can dissipate heat from the wafer at roughly the same speed, thereby improving the uniformity of the wafer temperature.

[0069] In some embodiments, the heat dissipation air duct 200 also includes a second hexagonal air duct group, the second hexagonal air duct group includes nine second hexagonal air ducts 220, the nine second hexagonal air ducts 220 are arranged around three first hexagonal air ducts 210, and there is a common sub-air duct 201 between two adjacent second hexagonal air ducts 220, and there is a common vertex and sub-air duct 201 between the second hexagonal air duct 220 and the adjacent first hexagonal air duct 210, and the three air outlets of the second hexagonal air duct group are respectively located at the vertices of the three first hexagonal air ducts away from the first common vertex.

[0070] like Figure 2 As shown, nine second hexagonal air channels 220 surround the periphery of the three first hexagonal air channels 210, and the first hexagonal air channels 210 and the second hexagonal air channels 220 are arranged to form a honeycomb shape. Each regular hexagonal air channel can dissipate heat in the area where it is located, and the increase in the number of regular hexagonal air channels can increase the density of the sub-air channels 201 distributed on the upper surface of the body 100. The heat dissipation gas flows out of the sub-air channels 201 to cool the wafer. The increase in the density of the sub-air channels 201 can increase the flow rate of the heat dissipation gas, thereby improving the temperature control ability of the carrier device. In addition, the air intake positions of the areas corresponding to the three second sub-air inlets 221 are the same, so that the distribution conditions of the heat dissipation gas in the three areas are roughly the same, further improving the uniformity of the temperature control of the carrier device.

[0071] In some embodiments, the body 100 further includes a pin hole 104 and a radio frequency feed hole 105, and both the pin hole 104 and the radio frequency feed hole 105 are arranged to avoid the gas channel. The body 100 also needs to cooperate with the pin assembly, the radio frequency feed assembly, etc. Figure 6 As shown, the number of ejector holes 104 is three, and the number of RF feed holes 105 is two. The ejector assembly includes three ejector pins, and the three ejector pins are inserted into the ejector holes 104 in a one-to-one correspondence. The main body 100 can be raised and lowered in the process chamber. When the main body 100 descends, the ejector pins can pass through the upper surface of the main body 100 to support the wafer to separate from the upper surface of the main body 100, so as to facilitate the placement of the wafer. The RF feed assembly is connected to the main body 100 through the RF feed hole 105, and is used to feed RF into the main body 100. Both the ejector hole 104 and the RF feed hole 105 are arranged to avoid the gas channel, which can prevent the heat dissipation gas from leaking from the ejector hole 104 or the RF feed hole 105, affecting the heat dissipation efficiency.

[0072] The present application also provides a semiconductor process equipment, including a gas source, a process chamber and a carrier device in any of the above embodiments, the carrier device is arranged in the process chamber, the gas source is connected to the gas channel of the carrier device, and is used to transport heat dissipation gas to the gas channel. During the process, the carrier device is used to support the wafer, and the process gas is introduced into the process chamber, and the process gas can process the surface of the wafer. During the process, the temperature of the wafer is high, and the gas source transports the heat dissipation gas to the carrier device through the gas channel, and the heat dissipation gas is introduced under the wafer to dissipate the heat of the wafer, thereby improving the uniformity of the temperature control of the carrier device and making the temperature of the wafer more uniform. The structure of other parts of the semiconductor process equipment can refer to the prior art and will not be repeated here. Among them, the carrier device can be an electrostatic chuck.

[0073] Optionally, the semiconductor process equipment further includes a speed regulating mechanism, which is connected to the delivery channel and is used to control the flow rate of the heat dissipation gas delivered by the delivery channel. Specifically, the air inlet of each delivery channel can be connected to a speed regulating mechanism, such as a flow control valve, a mass flow controller, etc. The speed regulating mechanism can adjust the flow rate of the heat dissipation gas to further improve the uniformity of the distribution of the heat dissipation gas on the upper surface of the body 100.

[0074] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present application, but the present application is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and substance of the present application, and these modifications and improvements are also considered to be within the scope of protection of the present application.

Claims

1. A carrier device for semiconductor process equipment, characterized in that: It comprises a body and gas channels distributed in the body, wherein: The body has a bearing surface for supporting a wafer; The gas channel includes a heat dissipation air channel and a delivery channel, the heat dissipation air channel is arranged on the bearing surface, and the delivery channel is used to deliver heat dissipation gas to the heat dissipation air channel; The heat dissipation air channel comprises a plurality of sub-air channels of the same length, the ends of the sub-air channels are connected to form a plurality of regular polygonal air channels of the same shape, the plurality of regular polygonal air channels are distributed on the bearing surface, and at least some of the regular polygonal air channels have air inlets; The air outlet of the delivery channel is connected to the air inlet of the regular polygonal airway.

2. The carrying device according to claim 1, characterized in that: The heat dissipation air channel comprises at least two regular polygonal air channel groups, each of the regular polygonal air channel groups is arranged around the axis of the body, and each of the regular polygonal air channel groups is arranged in sequence from the axis to the edge of the body.

3. The carrying device according to claim 2, characterized in that: The regular polygonal airway group has a plurality of air inlets, each of the air inlets of the same regular polygonal airway group is at an equal distance from the axis of the body and is evenly distributed around the axis of the body, and the air inlets of different regular polygonal airway groups are at different distances from the axis of the body; The number of the delivery channels is equal to the number of the regular polygonal airway groups and corresponds one to one. The air outlets of the delivery channels are connected to the air inlets of the corresponding regular polygonal airway groups.

4. The carrying device according to claim 2, characterized in that: The delivery channel includes an air inlet channel and multiple air delivery channels, the air outlets of each of the air delivery channels are respectively connected to the air inlets of the corresponding regular polygonal airway group, the air inlet of each of the air delivery channels is connected to the air outlet of the air inlet channel, the air inlet of the air inlet channel is used to connect to the air source, and the lengths of each of the air delivery channels are equal.

5. The carrying device according to claim 4, characterized in that: The regular polygonal airway group includes a first regular polygonal airway group and a second regular polygonal airway group, and the delivery channel includes a first delivery channel and a second delivery channel; The body comprises a first body layer, a second body layer and a third body layer which are stacked, and the first regular polygonal air channel group and the second regular polygonal air channel group are arranged on the upper surface of the first body layer; The first delivery channel includes a first air inlet channel and a first air delivery channel, the first air inlet channel and the first air delivery channel are arranged in the second body layer, and the first air delivery channel is connected to the first regular polygonal air channel group; The second delivery channel includes a second air inlet channel and a second air delivery channel, the second air inlet channel and the second air delivery channel are arranged in the third body layer, and the second air delivery channel is connected to the second regular polygonal air channel group.

6. The carrying device according to claim 5, characterized in that: The first delivery channel further includes a plurality of first connecting channels, the first air inlet channel and the first air delivery channel are arranged on the second body layer, the air outlet of the first air inlet channel is located on the axis of the body, the air inlet of each of the first air delivery channels is connected to the air outlet of the first air inlet channel, the air inlet of each of the first connecting channels is connected to the air outlet of each of the first air delivery channels, each of the first connecting channels passes through the first body layer and is connected to each of the air inlets of the first regular polygonal air channel group, and / or, The second delivery channel also includes multiple second connecting channels. The second air inlet channel and the second air delivery channel are arranged in the third body layer. The air outlet of the second air inlet channel is located on the axis of the body. The air inlet of each of the second air delivery channels is connected to the air outlet of the second air inlet channel. The air inlet of each of the second connecting channels is respectively connected to the air outlet of each of the second air delivery channels. Each of the second connecting channels passes through the second body layer and the first body layer and is connected to the air inlet of the second regular polygonal airway group.

7. The carrying device according to any one of claims 1 to 6, characterized in that: The regular polygonal air channel is a regular hexagonal air channel, and two adjacent regular hexagonal air channels in the heat dissipation air channel share one sub-air channel.

8. The carrying device according to claim 7, characterized in that: The heat dissipation air duct includes a first hexagonal air duct group, the first hexagonal air duct group includes three first hexagonal air ducts, the three first hexagonal air ducts have a first common vertex distribution, the first common vertex is on the axis of the main body, the sub-air duct shared by two adjacent first hexagonal air ducts is the first common air duct, and the three air inlets of the first hexagonal air duct group are respectively located at one end of the three first common air ducts away from the first common vertex.

9. The carrying device according to claim 8, characterized in that: The heat dissipation air duct also includes a second hexagonal air duct group, which includes nine second hexagonal air ducts. The nine second hexagonal air ducts are arranged around three first hexagonal air ducts. The second hexagonal air ducts and the adjacent first hexagonal air ducts have a common vertex and the sub-air duct. The three air outlets of the second hexagonal air duct group are respectively located at the vertices of the three first hexagonal air ducts away from the first common vertex.

10. A semiconductor process equipment, characterized in that: It comprises a gas source, a process chamber and the carrier device according to any one of claims 1 to 9, wherein the carrier device is arranged in the process chamber, and the gas source is connected to the gas channel of the carrier device for conveying heat dissipating gas to the gas channel.

11. The semiconductor process equipment according to claim 10, characterized in that: It also includes a speed regulating mechanism, which is connected to the delivery channel and is used to control the flow rate of the heat dissipation gas delivered by the delivery channel.