An infrared detector
By adopting an infrared detector with p-Si core n-V2O5 shell heterostructure or an InP core n-In2O3 shell heterostructure, the problems of complex processes, high cost and insufficient sensitivity of traditional infrared detectors are solved, and efficient and sensitive infrared light signal detection is achieved, which simplifies the process and reduces costs.
Patent Information
- Application Number
- CN202421465368.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-06-25
- Publication Date
- 2025-04-11
- Estimated Expiration
- 2034-06-25
AI Technical Summary
The preparation process of traditional infrared detectors is complex, requires expensive equipment, and has a long production cycle, which increases the production cost and limits the output and application range. At the same time, the sensitivity is insufficient, which cannot meet the needs of high-precision detection.
The p-Si core n-V2O5 shell heterostructure or the InP core n-In2O3 shell heterostructure is used as the core component. By optimizing the combination of nanostructures and shells, the photoelectric response performance and sensitivity are improved, the process process is simplified, and the cost is reduced.
It improves the photoelectric response performance and sensitivity of infrared detectors, expands the detection range, simplifies the process, reduces production costs, and meets the needs of high-precision detection.
Smart Images
Figure CN222750786U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to but is not limited to the technical field of sensor processing, and in particular to an infrared detector. Background Art
[0002] The traditional infrared detector preparation process usually requires p-type and n-type doping to form a pn junction structure to achieve effective separation of photogenerated carriers. However, this doping process is complicated, requires expensive equipment, and has a relatively long production cycle, which not only increases the preparation cost, but also limits the output and application scope of infrared detectors. In addition, traditional infrared detectors still have certain deficiencies in sensitivity and cannot meet certain high-precision detection requirements. Summary of the invention
[0003] In view of the above problems, the present application provides an infrared detector, which effectively improves the photoelectric response performance and sensitivity of the infrared detector, and has a simple structure and low production cost.
[0004] In order to achieve the above purpose, the utility model provides the following technical solutions:
[0005] An infrared detector comprises: from bottom to top, a first electrode, a substrate, a core-shell structure, a nanodot layer, and a second electrode; the core-shell structure comprises a nanostructure and a shell layer, and the shell layer covers the surface of the nanostructure; the second electrode is located on both sides of the core-shell structure; wherein the core-shell structure is a p-Si core nV 2 O 5 InP core-In heterostructure 2 O 3 Shell heterostructure.
[0006] Furthermore, when the core-shell structure is p-Si core nV 2 O 5 shell heterostructure, the nanostructure is a nanocolumn array; when the core-shell structure is InP core n-In 2 O 3 Shell heterostructure, the nanostructure is a nanowire array, a nanosheet array or a nanogrid.
[0007] Furthermore, the nanostructure is a nanocolumn array, and the nanocolumns of the nanocolumn array are circular, regular quadrilateral or regular hexagonal; when the nanocolumn is circular, the diameter of the nanocolumn is 10nm to 950nm; when the nanocolumn is a regular quadrilateral or a regular hexagon, the diameter of the circumscribed circle of the nanocolumn is 10nm to 950nm; the height of the nanocolumn is 100nm to 10000nm, and the center distance between adjacent nanocolumns is 100nm to 5000nm.
[0008] Furthermore, the nanostructure is a nanowire array, and the nanowires of the nanowire array are circular, triangular, regular quadrilateral, regular pentagon or regular hexagon; when the nanowire is circular, the diameter of the nanowire is 100nm-950nm; when the nanowire is triangular, regular quadrilateral, regular pentagon or regular hexagon, the diameter of the circumscribed circle of the nanowire is 100nm to 950nm; the center spacing between adjacent nanowires is 100nm to 5000nm, and the height of the nanowire is 100nm to 2000nm.
[0009] Furthermore, the nanostructure is a nanosheet array, the thickness of the nanosheets in the nanosheet array is 50nm to 200nm, the length is 200nm to 10000nm, the center spacing between adjacent nanosheets is 100nm to 5000nm, and the height of the nanosheets is 100nm to 2000nm.
[0010] Furthermore, the nanostructure is a nanomesh, and the central hole of the nanomesh is circular, triangular, regular quadrilateral, regular pentagon or regular hexagon; when the central hole of the nanomesh is circular, the diameter of the nanomesh is 100nm to 950nm; when the central hole of the nanomesh is triangular, regular quadrilateral, regular pentagon or regular hexagon, the diameter of the circumscribed circle of the nanomesh is 100nm to 950nm.
[0011] Furthermore, the center spacing between adjacent nanogrids is 100nm to 5000nm; the depth of the nanogrid is 100nm to 2000nm; and the line thickness of the nanogrid is 100nm to 950nm.
[0012] Furthermore, the thickness of the shell layer is 40nm to 600nm.
[0013] Furthermore, the first electrode is an Au electrode or a Ti electrode.
[0014] Furthermore, the nanodot layer is graphene quantum dots or Au quantum dots.
[0015] Compared with the prior art, the beneficial effects of the present invention are:
[0016] 1. Adopt p-Si core nV 2 O 5 InP core-In heterostructure 2 O 3As a core component, the shell heterostructure can not only enhance the photoelectric response performance of the device and efficiently detect infrared light signals, making the detector have a wider detection range and higher sensitivity, but also further improve the photoelectric conversion efficiency of the detector by optimizing the combination of nanostructure and shell layer.
[0017] 2. By using p-Si core nV 2 O 5 InP core-In heterostructure 2 O 3 With the shell heterostructure as the core component, the infrared detector does not require complicated p-type and n-type doping processes and has a simple structure.
[0018] 3. The utility model adopts a bottom-up structural design, including a first electrode, a substrate, a core-shell structure, a nanodot layer and a second electrode, which can achieve a higher integration and reduce device costs.
[0019] The above general description and the following description are exemplary and explanatory only and are not intended to limit the present application. BRIEF DESCRIPTION OF THE DRAWINGS
[0020] Figure 1 This is the overall structure diagram of the infrared detector provided by the utility model;
[0021] Reference numerals: first electrode 110 ; substrate 120 ; core-shell structure 130 ; nanodot layer 140 ; second electrode 150 ; nanostructure 131 ; shell layer 132 . DETAILED DESCRIPTION
[0022] In order to make the purpose, technical solution and advantages of the utility model more clear, the utility model is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the utility model and are not used to limit the utility model.
[0023] It should be noted that, although the logical order is shown in the flowchart, in some cases, the steps shown or described can be performed in a different order from that in the flowchart. The terms "first", "second", etc. in the specification, claims and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings of this specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the limiting conditions that the present invention can be implemented, so they have no technical substantive significance. Any modification of the structure, change of the proportional relationship or adjustment of the size, without affecting the effects that the present invention can produce and the purposes that can be achieved, should still fall within the scope of the technical content disclosed by the present invention. At the same time, the terms such as "upper", "lower", "left", "right", "middle" and "one" quoted in this specification are only for the convenience of narration, and are not used to limit the scope of the implementation of the present invention. The change or adjustment of the relative relationship should also be regarded as the scope of the implementation of the present invention without substantially changing the technical content.
[0024] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art of the present invention. The terms used herein are only for the purpose of describing the present invention and are not intended to limit the present invention.
[0025] The traditional infrared detector preparation process usually requires p-type and n-type doping to form a pn junction structure to achieve effective separation of photogenerated carriers. However, this doping process is complicated, requires expensive equipment, and has a relatively long production cycle, which not only increases the preparation cost, but also limits the output and application scope of infrared detectors. In addition, traditional infrared detectors still have certain deficiencies in sensitivity and cannot meet certain high-precision detection requirements.
[0026] In view of this, the utility model provides an infrared detector, which adopts a p-Si core nV 2 O 5 InP core-In heterostructure 2 O 3 As a core component, the shell heterostructure can not only enhance the photoelectric response performance of the device and efficiently detect infrared light signals, making the detector have a wider detection range and higher sensitivity, but also further improve the photoelectric conversion efficiency of the detector by optimizing the combination of nanostructure and shell. 2 O 5 InP core n-In shell heterostructure 2 O 3The core-shell heterostructure is used as the core component, so the infrared detector does not need complicated p-type and n-type doping processes and has a simple structure. The utility model adopts a bottom-up structural design, including a first electrode, a substrate, a core-shell structure, a nanodot layer and a second electrode, which can achieve a higher integration and reduce device costs.
[0027] The utility model will be further described below in conjunction with the accompanying drawings.
[0028] See also Figure 1 , Figure 1 This is the overall structure diagram of the infrared detector provided by the utility model. The infrared detector adopts a layered structure, including a first electrode 110, a substrate 120, a core-shell structure 130, a nanodot layer 140 and a second electrode 150. These components are connected layer by layer from bottom to top to form an infrared detector. Among them, the core-shell structure 130 includes a nanostructure 131 and a shell layer 132, the shell layer 132 covers the surface of the nanostructure 131, and the second electrode 150 is located on both sides of the core-shell structure 130.
[0029] In a feasible embodiment, the core-shell structure 130 may be a p-Si core nV 2 O 5 InP core-In heterostructure 2 O 3 Specifically, when the core-shell structure 130 adopts a p-Si core nV 2 O 5 In the case of a shell heterostructure, since the structure is composed of a p-Si nanorod array as the core layer (nanostructure 131), the outer layer is covered with V 2 O 5 As a shell layer (shell layer 132), the core-shell structure 130 can maintain the excellent performance of the p-Si nanorod array while being 2 O 5 The shell layer introduces new functional properties. Similarly, when the core-shell structure 130 adopts InP core n-In 2 O 3 In the case of a heterogeneous structure, the structure is composed of an InP nanostructure (nanostructure 131) as the core layer and an In 2 O 3 As a shell layer (shell layer 132). In this structure, the morphology of the nanostructure 131 can be diversified, including nanowire arrays, nanosheet arrays or nanogrids, and the selection of these morphologies depends on specific application requirements and performance optimization.
[0030] In a feasible embodiment, when the core-shell structure 130 is made of p-Si core nV 2 O 5In the case of a core-shell heterostructure, the substrate 120 is a Si substrate, the nanostructure 131 of the core-shell structure 130 is a p-Si nanocolumn array, and the shell 132 is a V 2 O 5 Shell layer, wherein the p-Si nanorod array is connected to the first electrode 110, V 2 O 5 The shell layer covers the surface of the p-Si nanocolumn array, forming an efficient pn junction structure, which can greatly improve the detector's absorption efficiency of light energy, allowing it to respond to infrared radiation more sensitively and accurately. In addition, the infrared detector does not contain any toxic elements or other environmentally prohibited materials, and has good environmental performance, which not only reduces environmental pollution during the production process, but also ensures that the product has minimal impact on the environment during use and disposal.
[0031] In a possible embodiment, V 2 O 5 The shell thickness can be from 40nm to 600nm, ensuring that the detector has stable performance output under various environmental conditions.
[0032] In a feasible embodiment, the shape of the nanopillars of the p-Si nanopillar array can be selected as circular, regular quadrilateral or regular hexagon. Specifically, for circular p-Si nanopillars, the diameter ranges from 10nm (nanometers) to 950nm; for non-circular p-Si nanopillars such as regular quadrilaterals or regular hexagons, the diameter range of the circumscribed circle is between 10nm and 950nm, ensuring the best balance between detection performance and preparation process. In addition, the center spacing between adjacent p-Si nanopillars is between 100nm and 5000nm, which helps to achieve higher light absorption efficiency and response sensitivity. At the same time, the height of the p-Si nanopillar is set in the range of 100nm to 10000nm, which can provide sufficient space for the detector to form an efficient pn junction structure, further enhancing the infrared detection performance.
[0033] In a feasible embodiment, the core-shell structure 130 is a p-Si core nV 2 O 5 The nanodot layer 140 of the infrared detector with a shell heterostructure can be composed of graphene quantum dots. It is understood that graphene quantum dots can improve the light absorption efficiency, increase the device photocurrent, and effectively reduce the dark current, greatly increase the switching ratio (usually several times or more), and improve the sensitivity of the device. By controlling the diameter of these graphene quantum dots within the range of 50nm to 200nm, it can be ensured that they can play an excellent photoelectric performance in the infrared detector.
[0034] In a feasible embodiment, graphene quantum dots can be evenly coated on the p-Si core nV2 O 5 Shell heterostructure, with V 2 O 5 The shells are tightly connected, thus achieving V 2 O 5 This connection method ensures that the graphene quantum dots can fully exert their optoelectronic properties and interact with the p-Si core nV 2 O 5 The shell heterostructure works together to further improve the overall performance of the infrared detector.
[0035] In a feasible embodiment, the core-shell structure 130 is a p-Si core nV 2 O 5 In the infrared detector with a shell heterostructure, the first electrode 110 can use a Ti layer with a thickness of 50nm as a P-type electrode to ensure efficient conduction of current. At the same time, the second electrode 150 can use an Au layer with a thickness of 100nm as an n-type electrode. This configuration helps to improve the stability of the overall structure and optimize the performance of the infrared detector.
[0036] In a feasible embodiment, when the core-shell structure 130 is made of InP core n-In 2 O 3 In the core-shell heterostructure, the substrate 120 is an InP substrate, which ensures the compatibility and stability of the structure. The nanostructure 131 of the core-shell structure 130 is an InP nanostructure, which is connected to the first electrode 110 and provides an efficient channel for current conduction. The shell layer 132 is composed of n-type In 2 O 3 The shell layer, In 2 O 3 Shell, In 2 O 3 The shell layer tightly covers the surface of the InP nanostructure, forming a high-quality heterointerface that facilitates the efficient separation and transport of photogenerated carriers. 2 O 3 The nanodot layer 140 is evenly distributed on the surface of the shell layer, which not only increases the light absorption area, but also further improves the sensitivity of the detector through the quantum effect generated by the nanodots. 2 O 3 The close connection of the shell layer ensures that the carriers can be efficiently transferred from the nanodot layer to the shell layer, and then reach the first electrode 110 via the InP nanostructure.
[0037] In a possible embodiment, In 2 O 3The shell thickness can be between 50nm and 150nm, ensuring that the detector has stable performance output under various environmental conditions.
[0038] In a feasible embodiment, the nanodot layer 140 is a thin layer uniformly distributed on the surface of the shell layer and can be composed of Au quantum dots (ie, Au nanoparticles). 2 O 3 The shell heterostructure and Au quantum dots together form a unique three-layer core-shell nanostructure. The structure has an InP nanostructure as the core, a shell layer as the middle layer, and Au quantum dots as the outermost layer. It is worth mentioning that these Au quantum dots can significantly reduce the dark current, significantly increase the photocurrent of the device, and greatly increase the switching ratio (usually by several times or more), thereby significantly enhancing the sensitivity of the device. In addition, the three-layer core-shell nanostructure, due to its pn junction structure and combined with the excellent surface plasmon enhancement effect of Au quantum dots, can greatly improve the photoelectric response performance of the device, with an improvement of 1 to 3 orders of magnitude.
[0039] In a feasible embodiment, when the InP nanostructure is a nanowire array, the shape of the nanowires of the nanowire array can be circular, triangular, regular quadrilateral, regular pentagon or regular hexagon. Specifically, for circular nanowires, the diameter ranges from 100nm to 950nm; for non-circular nanowires such as triangles, regular quadrilaterals, regular pentagons or regular hexagons, the diameter range of the circumscribed circle is between 100nm and 950nm, ensuring the best balance between detection performance and preparation process. In addition, the center spacing between adjacent nanowires is between 100nm and 5000nm, which helps to achieve higher light absorption efficiency and response sensitivity. At the same time, the height of the nanowire is set in the range of 100nm to 2000nm, which can provide enough space for the detector to form an efficient pn junction structure, further enhancing the infrared detection performance.
[0040] In a feasible embodiment, when the InP nanostructure is a nanosheet array, the thickness of the nanosheets in the nanosheet array ranges from 50nm to 200nm, the length ranges from 200nm to 10000nm, the height ranges from 100nm to 2000nm, and the center spacing between adjacent nanosheets is between 100nm and 5000nm.
[0041] In a feasible embodiment, when the InP nanostructure is a nanomesh, the central hole of the nanomesh can be circular, triangular, regular quadrilateral, regular pentagon or regular hexagon. Specifically, for a nanomesh whose central hole is circular, its diameter ranges from 100nm to 950nm; for a nanomesh whose central hole is a non-circular shape such as a triangle, regular quadrilateral, regular pentagon or regular hexagon, the diameter of its circumscribed circle ranges from 100nm to 950nm. In addition, the center spacing between adjacent nanomeshes is between 100nm and 5000nm, the depth of the nanomesh is 100nm to 2000nm, and the line thickness of the nanomesh is 100nm to 950nm.
[0042] In a feasible embodiment, the core-shell structure 130 is an InP core n-In 2 O 3 The first electrode 110 and the second electrode 150 of the infrared detector with a shell heterostructure can both use Au layers with a thickness ranging from 100nm to 150nm, as P-type electrodes and n-type electrodes respectively, to ensure efficient conduction of current, help improve the stability of the overall structure and optimize the performance of the infrared detector.
[0043] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present invention. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but will conform to the widest scope consistent with the principles and novel features disclosed herein.
Claims
1. An infrared detector, characterized in that: include: From bottom to top, a first electrode, a substrate, a core-shell structure, a nanodot layer and a second electrode; the core-shell structure includes a nanostructure and a shell layer, and the shell layer covers the surface of the nanostructure; the second electrode is located on both sides of the core-shell structure; wherein the core-shell structure is a p-Si core n-V2O5 shell heterostructure or an InP core n-In2O3 shell heterostructure.
2. An infrared detector according to claim 1, characterized in that: When the core-shell structure is a p-Si core n-V2O5 shell heterostructure, the nanostructure is a nanocolumn array; when the core-shell structure is an InP core n-In2O3 shell heterostructure, the nanostructure is a nanowire array, a nanosheet array or a nanogrid.
3. An infrared detector according to claim 2, characterized in that: The nanostructure is a nanocolumn array, and the nanocolumns of the nanocolumn array are circular, regular quadrilateral or regular hexagonal; when the nanocolumns are circular, the diameter of the nanocolumns is 10nm to 950nm; when the nanocolumns are regular quadrilateral or regular hexagon, the diameter of the circumscribed circle of the nanocolumns is 10nm to 950nm; the height of the nanocolumns is 100nm to 10000nm, and the center spacing between adjacent nanocolumns is 100nm to 5000nm.
4. An infrared detector according to claim 2, characterized in that: The nanostructure is a nanowire array, and the nanowires of the nanowire array are circular, triangular, regular quadrilateral, regular pentagon or regular hexagon; when the nanowire is circular, the diameter of the nanowire is 100nm-950nm; when the nanowire is triangular, regular quadrilateral, regular pentagon or regular hexagon, the diameter of the circumscribed circle of the nanowire is 100nm to 950nm; the center spacing between adjacent nanowires is 100nm to 5000nm, and the height of the nanowire is 100nm to 2000nm.
5. The infrared detector according to claim 2, characterized in that: The nanostructure is a nanosheet array, the thickness of the nanosheets in the nanosheet array is 50nm to 200nm, the length is 200nm to 10000nm, the center distance between adjacent nanosheets is 100nm to 5000nm, and the height of the nanosheets is 100nm to 2000nm.
6. An infrared detector according to claim 2, characterized in that: The nanostructure is a nanogrid, and the central hole of the nanogrid is circular, triangular, regular quadrilateral, regular pentagon or regular hexagon; when the central hole of the nanogrid is circular, the diameter of the nanogrid is 100nm to 950nm; when the central hole of the nanogrid is triangular, regular quadrilateral, regular pentagon or regular hexagon, the diameter of the circumscribed circle of the nanogrid is 100nm to 950nm.
7. An infrared detector according to claim 6, characterized in that: The center spacing between adjacent nanogrids is 100nm to 5000nm; the depth of the nanogrid is 100nm to 2000nm; and the line thickness of the nanogrid is 100nm to 950nm.
8. The infrared detector according to claim 1, characterized in that: The thickness of the shell layer is 40nm to 600nm.
9. The infrared detector according to claim 1, characterized in that: The first electrode is an Au electrode or a Ti electrode.
10. The infrared detector according to claim 1, characterized in that: The nano dot layer is graphene quantum dots or Au quantum dots.