Low-stress central gate silicon controlled rectifier connecting bridge and silicon controlled rectifier structure

Abstract

The utility model provides a low-stress central gate silicon controlled rectifier connecting bridge and a silicon controlled rectifier structure in order to solve the problem of poor through-flow effect in the existing silicon controlled rectifier module, and the silicon controlled rectifier connecting bridge comprises a first connecting bridge and a second connecting bridge, wherein the first connecting bridge is used for being connected with one electrode of the silicon controlled rectifier; one end of the second connecting bridge is connected with the first connecting bridge; the first connecting bridge and the second connecting bridge are made of conductive materials; the first connecting bridge is in a sheet shape, and a plurality of hollow grooves used for stress unloading are formed in the first connecting bridge. The silicon controlled rectifier chip is connected with other elements, the structure is simple, and through-flow is stable.

Description

Technical Field

[0001] The utility model relates to the technical field of thyristors, in particular to a low-stress central gate thyristor bridge and a thyristor structure. Background Art

[0002] There are two main ways to lead out the K pole of the traditional gate thyristor structure. One is to weld a molybdenum sheet with a center hole on the surface of the K pole of the thyristor, and then weld a copper bridge from the molybdenum sheet to lead out the K pole to achieve connection with the external pin, such as the content shown in the patent with authorization announcement number CN210052739U; the other is to lead out after ultrasonic bonding with aluminum wire on the surface of the K pole of the thyristor. Among them, for the method of welding the molybdenum sheet, on the one hand, the thermal resistance of the molybdenum sheet is large, and the flow capacity will be weakened after the thyristor reaches the junction temperature. On the other hand, the cost of the molybdenum sheet is relatively high; for the method of using aluminum wire ultrasonic bonding, the thickness of the vaporized aluminum layer on the surface of the thyristor is required to be high. If the thickness of the aluminum layer is too thick, it will increase the difficulty of the overall process. If the aluminum layer is too thin, it is easy to cause damage to the thyristor chip. In addition, the flow capacity of the aluminum layer is also weak. Therefore, a low-stress center gate thyristor bridge and thyristor structure with stable flow and simple process is needed. Summary of the invention

[0003] The utility model aims to solve the deficiencies of the prior art and provide a low-stress central gate thyristor bridge and thyristor structure.

[0004] In order to solve the above problems, the utility model adopts the following solutions:

[0005] A low stress central gate thyristor bridge comprises a first bridge and a second bridge; wherein the first bridge is used to connect to an electrode of the thyristor; one end of the second bridge is connected to the first bridge; the first bridge and the second bridge are both made of conductive materials; the first bridge is in sheet shape and is provided with a plurality of hollow grooves for stress unloading.

[0006] Furthermore, the first connecting bridge and the second connecting bridge are both made of copper.

[0007] Furthermore, the thickness of the first bridge is in the range of 0.3 mm to 0.4 mm.

[0008] Furthermore, the thickness of the second bridge is greater than 0.5 mm.

[0009] Furthermore, a first connecting portion bent upward is provided on the side of the first connecting bridge close to the second connecting bridge, and the upper end of the first connecting portion is a horizontal first fitting surface; a second connecting portion bent upward is provided on the side of the second connecting bridge close to the first connecting bridge, and the upper end of the second connecting portion is a horizontal second fitting surface; the first fitting surface and the second fitting surface are fitted together.

[0010] Furthermore, the first connecting bridge and the second connecting bridge are connected by welding.

[0011] A central gate thyristor structure comprises the above-mentioned thyristor bridge and a thyristor chip; one pole of the thyristor chip is connected to a copper bottom plate, and the other pole is connected to a first bridge in the thyristor bridge.

[0012] Furthermore, a gate lead is provided in the middle area of ​​the thyristor chip; and a through hole corresponding to the gate lead is provided on the first bridge.

[0013] Furthermore, the anode of the thyristor chip is connected to the copper base plate, and the cathode is connected to the first bridge.

[0014] Furthermore, an electrode sheet is also arranged on the copper bottom plate.

[0015] The beneficial effects of the utility model are:

[0016] The thyristor bridge is formed by setting a low-stress first bridge and a high-current second bridge to achieve connection between the thyristor chip and other components, with a simple structure and stable current flow;

[0017] By setting the first connection part and the second connection part, the connection part of the thyristor bridge is lifted upward. When the current flows through the connection part, the unloading groove at the bottom arc starting point can release the stress and reduce the possibility of breakdown. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 The schematic diagram of the gate thyristor structure of Example 1;

[0019] Figure 2 An exploded view of the gate thyristor structure of Example 1;

[0020] Figure 3 This is a schematic diagram of the thyristor bridge of Example 1.

[0021] Description of the symbols in the accompanying drawings: first connecting bridge 1, hollow groove 11, first connecting part 12, first bonding surface 13, second connecting bridge 2, second connecting part 21, second bonding surface 22, thyristor chip 3, copper base plate 4, gate lead 5, electrode sheet 6. DETAILED DESCRIPTION

[0022] The following describes the implementation of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific implementations, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the following embodiments and features in the embodiments can be combined with each other without conflict.

[0023] It should be noted that the illustrations provided in the following embodiments are only schematic illustrations of the basic concept of the present invention, and the figures only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0024] Embodiment 1:

[0025] like Figures 1 to 3 As shown, a low stress center gate thyristor bridge comprises a first bridge 1 and a second bridge 2; wherein the first bridge 1 is used to connect to an electrode of the thyristor, in this example it is the K electrode, that is, the cathode of the thyristor; one end of the second bridge 2 is connected to the first bridge 1; the first bridge 1 and the second bridge 2 are both made of conductive materials, in this example the first bridge 1 and the second bridge 2 are both made of copper; the first bridge 1 is in sheet shape, and is provided with a plurality of hollow grooves 11 for stress unloading.

[0026] The thickness of the first bridge 1 is in the range of 0.3mm to 0.4mm; the thickness of the second bridge 2 is greater than 0.5mm; the first bridge 1 is thinner and is provided with a hollow groove 11 for unloading, so the stress of the first bridge 1 is lower and the current allowed to pass is smaller; after the current reaches the second bridge 2, due to the thicker thickness of the second bridge 2, a larger current can pass.

[0027] A first connecting portion 12 bent upward is provided on the side of the first connecting bridge 1 close to the second connecting bridge 2, and the upper end of the first connecting portion 12 is a horizontal first bonding surface 13; a second connecting portion 21 bent upward is provided on the side of the second connecting bridge 2 close to the first connecting bridge 1, and the upper end of the second connecting portion 21 is a horizontal second bonding surface 22; the first bonding surface 13 and the second bonding surface 22 are bonded to each other; in this example, the first bonding surface 13 and the second bonding surface 22 are connected by welding.

[0028] A center gate thyristor structure includes the above-mentioned thyristor bridge and a thyristor chip 3; one of the electrodes of the thyristor chip 3 is connected to the copper bottom plate 4, and the other electrode is connected to the first bridge 1 in the thyristor bridge; in this example, the thyristor chip 3 is a sheet-shaped center gate thyristor chip 3, the anode of the thyristor chip 3 is connected to the copper bottom plate 4, and the cathode of the thyristor chip 3 is attached to the first bridge 1 in the thyristor bridge. A gate lead 5 is also provided in the middle area of ​​the thyristor chip 3; a through hole corresponding to the gate lead 5 is provided on the first bridge 1, and the gate lead 5 passes through the through hole to connect to the gate of the thyristor chip 3.

[0029] The copper bottom plate 4 is also provided with an electrode sheet 6 , which is connected to the electrode of the thyristor chip 3 through the copper bottom plate 4 or the copper bottom plate 4 and the thyristor bridge.

[0030] During the implementation process, a thyristor bridge is formed by setting a low-stress first bridge 1 and a high-current second bridge 2 to achieve connection between the thyristor chip 3 and other components, and the structure is simple and the current is stable. By setting the first connecting part 12 and the second connecting part 21, the connecting part of the thyristor bridge is lifted upward, and when the current flows through the connecting part 12, the unloading groove at the bottom arc starting point can release the stress and reduce the possibility of breakdown.

[0031] The above description is only a specific example of the utility model and does not constitute any limitation to the utility model. Obviously, for professionals in this field, after understanding the content and principle of the utility model, it is possible to make various modifications and changes in form and details without departing from the principle and structure of the utility model, but these modifications and changes based on the idea of ​​the utility model are still within the scope of protection of the claims of the utility model.

Claims

1. A low stress center gate thyristor bridge, characterized in that: The invention comprises a first connecting bridge (1) and a second connecting bridge (2); wherein the first connecting bridge (1) is used to connect to an electrode of a thyristor; one end of the second connecting bridge (2) is connected to the first connecting bridge (1); the first connecting bridge (1) and the second connecting bridge (2) are both made of conductive material; the first connecting bridge (1) is in the form of a sheet, and is provided with a plurality of hollow grooves (11) for stress relief.

2. A low stress central gate thyristor bridge according to claim 1, characterized in that: The first connecting bridge (1) and the second connecting bridge (2) are both made of copper.

3. A low stress central gate thyristor bridge according to claim 2, characterized in that: The thickness of the first bridge (1) ranges from 0.3 mm to 0.4 mm.

4. A low stress central gate thyristor bridge according to claim 3, characterized in that: The thickness of the second connecting bridge (2) is greater than 0.5 mm.

5. The low stress center gate thyristor bridge according to claim 1, characterized in that: A first connecting portion (12) bent upward is provided on a side of the first connecting bridge (1) close to the second connecting bridge (2), and the upper end of the first connecting portion (12) is a horizontal first fitting surface (13); a second connecting portion (21) bent upward is provided on a side of the second connecting bridge (2) close to the first connecting bridge (1), and the upper end of the second connecting portion (21) is a horizontal second fitting surface (22); the first fitting surface (13) and the second fitting surface (22) are fitted together.

6. A low stress central gate thyristor bridge according to claim 5, characterized in that: The first connecting bridge (1) and the second connecting bridge (2) are connected by welding.

7. A center gate thyristor structure, characterized in that: The thyristor bridge comprises the thyristor connecting bridge as claimed in any one of claims 1 to 6, and further comprises a thyristor chip (3); one pole of the thyristor chip (3) is connected to the copper base plate (4), and the other pole is connected to the first connecting bridge (1) in the thyristor connecting bridge.

8. A center gate thyristor structure according to claim 7, characterized in that: A gate lead (5) is provided in the middle area of ​​the thyristor chip (3); and a through hole corresponding to the gate lead (5) is provided on the first bridge (1).

9. A center gate thyristor structure according to claim 7, characterized in that: The anode of the thyristor chip (3) is connected to the copper bottom plate (4), and the cathode is connected to the first bridge (1).

10. A center gate thyristor structure according to claim 7, characterized in that: An electrode sheet (6) is also provided on the copper bottom plate (4).

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