I-type three-level circuit module and large storage converter module

Abstract

The utility model discloses an I-type three-level circuit module and a large storage converter module, and relates to the technical field of converters. According to the I-type three-level circuit module, the three IGBT half-bridge modules are arranged in the shape like the inverted Chinese character'pin ', the total length of the copper bar connecting the capacitor bank and the IGBT half-bridge modules and the copper bar connecting the three IGBT half-bridge modules can be shortest, stray inductance in the circuit can be reduced, peak voltage generated by the stray inductance when the IGBTs are turned off is reduced, and the service life of the circuit is prolonged. And the risk of damaging the IGBT and the switching loss are reduced.

Description

Technical Field

[0001] The utility model relates to the technical field of converters, in particular to an I-type three-level circuit module and a large-storage converter module. Background Art

[0002] The I-type three-level circuit module is generally composed of three IGBT half-bridge modules, which can generate three different levels. At present, the layout of the three IGBT half-bridge modules in the I-type three-level circuit module is unreasonable, and the copper busbar connecting the capacitor group and the IGBT half-bridge module and the copper busbar connecting the three IGBT half-bridge modules are long, resulting in large stray inductance in the circuit. When the IGBT is turned off, the spike voltage generated by the stray inductance is large, which increases the risk of damaging the IGBT and the switching loss. Utility Model Content

[0003] The utility model solves the technical problem of how to reduce the stray inductance in the I-type three-level circuit module by providing an I-type three-level circuit module and a large-storage converter module.

[0004] On the one hand, the utility model provides the following technical solutions:

[0005] An I-type three-level circuit module comprises a capacitor group, a first IGBT half-bridge module, a second IGBT half-bridge module and a third IGBT half-bridge module;

[0006] The first IGBT half-bridge module, the second IGBT half-bridge module and the third IGBT half-bridge module are arranged in an inverted triangle shape, the first IGBT half-bridge module and the second IGBT half-bridge module are located above the triangle shape, and the third IGBT half-bridge module is located below the triangle shape;

[0007] One end of the capacitor group is connected to the positive electrode of the first IGBT half-bridge module, the other end of the capacitor group is connected to the negative electrode of the second IGBT half-bridge module, the N end of the first IGBT half-bridge module and the N end of the second IGBT half-bridge module are both connected to the midpoint of the capacitor group, the AP end of the first IGBT half-bridge module is connected to the AP end of the third IGBT half-bridge module, and the AN end of the second IGBT half-bridge module is connected to the AN end of the third IGBT half-bridge module;

[0008] The positive electrode and N terminal of the first IGBT half-bridge module are both located at the upper part of the first IGBT half-bridge module, and the negative electrode and N terminal of the second IGBT half-bridge module are both located at the upper part of the first IGBT half-bridge module. From the first IGBT half-bridge module to the second IGBT half-bridge module, the positive electrode of the first IGBT half-bridge module, the N terminal of the first IGBT half-bridge module, the N terminal of the second IGBT half-bridge module, and the negative electrode of the second IGBT half-bridge module are in sequence;

[0009] The AP end of the first IGBT half-bridge module is located at the lower part of the first IGBT half-bridge module, the AN end of the second IGBT half-bridge module is located at the lower part of the second IGBT half-bridge module, the AP end and the AN end of the third IGBT half-bridge module are both located at the upper part of the third IGBT half-bridge module, and the AP end of the third IGBT half-bridge module is located on one side of the first IGBT half-bridge module, and the AN end of the third IGBT half-bridge module is located on one side of the second IGBT half-bridge module.

[0010] Optionally, the switch tube T1 in the first IGBT half-bridge module is turned on and T5 is turned off, the switch tube T6 in the second IGBT half-bridge module is turned on and T4 is turned off, and the switch tube T2 in the third IGBT half-bridge module is turned on and T3 is turned off.

[0011] Optionally, the switch tube T1 in the first IGBT half-bridge module is turned off and T5 is turned on, the switch tube T6 in the second IGBT half-bridge module is turned on and T4 is turned off, and the switch tube T2 in the third IGBT half-bridge module is turned on and T3 is turned off.

[0012] Optionally, the switch tube T1 in the first IGBT half-bridge module is disconnected and T5 is turned on, the switch tube T6 in the second IGBT half-bridge module is disconnected and T4 is turned on, and the switch tube T2 in the third IGBT half-bridge module is turned on and T3 is disconnected.

[0013] Optionally, the switch tube T1 in the first IGBT half-bridge module is disconnected and T5 is turned on, the switch tube T6 in the second IGBT half-bridge module is turned on and T4 is disconnected, and the switch tube T2 in the third IGBT half-bridge module is disconnected and T3 is turned on.

[0014] Optionally, the switch tube T1 in the first IGBT half-bridge module is turned on and T5 is turned off, the switch tube T6 in the second IGBT half-bridge module is turned on and T4 is turned off, and the switch tube T2 in the third IGBT half-bridge module is turned off and T3 is turned on.

[0015] Optionally, the switch tube T1 in the first IGBT half-bridge module is disconnected and T5 is turned on, the switch tube T6 in the second IGBT half-bridge module is disconnected and T4 is turned on, and the switch tube T2 in the third IGBT half-bridge module is disconnected and T3 is turned on.

[0016] On the other hand, the utility model also provides the following technical solutions:

[0017] A large-storage converter module comprises three I-type three-level circuit modules, wherein the three I-type three-level circuit modules are connected in parallel and arranged in parallel.

[0018] One or more technical solutions provided by the utility model have at least the following technical effects or advantages:

[0019] The three IGBT half-bridge modules of the I-type three-level circuit module of the utility model are arranged in an inverted triangular shape, and the total length of the copper busbar connecting the capacitor group and the IGBT half-bridge module and the copper busbar connecting the three IGBT half-bridge modules can be minimized, which can reduce the stray inductance in the circuit, thereby reducing the peak voltage generated by the stray inductance when the IGBT is turned off, reducing the risk of damaging the IGBT and the switching loss. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0021] Figure 1 This is a schematic diagram of the structure of a type I three-level circuit module in an embodiment of the utility model;

[0022] Figure 2 This is a circuit schematic diagram of a type I three-level circuit module in an embodiment of the utility model;

[0023] Figure 3 It is a structural schematic diagram of a large storage converter module in an embodiment of the utility model. DETAILED DESCRIPTION

[0024] The embodiment of the utility model solves the technical problem of how to reduce the stray inductance in the I-type three-level circuit module by providing an I-type three-level circuit module and a large-storage converter module.

[0025] In order to better understand the technical solution of the present invention, the technical solution of the present invention will be described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0026] like Figure 1As shown in the figure, the I-type three-level circuit module of the embodiment of the present utility model includes a capacitor bank, a first IGBT half-bridge module, a second IGBT half-bridge module, and a third IGBT half-bridge module; the first IGBT half-bridge module, the second IGBT half-bridge module, and the third IGBT half-bridge module are arranged in an inverted character shape, the first IGBT half-bridge module and the second IGBT half-bridge module are above the character shape, and the third IGBT half-bridge module is below the character shape; one end of the capacitor bank is connected to the positive electrode of the first IGBT half-bridge module, the other end of the capacitor bank is connected to the negative electrode of the second IGBT half-bridge module, the N terminals of the first IGBT half-bridge module and the second IGBT half-bridge module are both connected to the midpoint of the capacitor bank, the AP terminal of the first IGBT half-bridge module is connected to the AP terminal of the third IGBT half-bridge module, and the AN terminal of the second IGBT half-bridge module is connected to the AN terminal of the third IGBT half-bridge module.

[0027] The positive electrode and the N terminal of the first IGBT half-bridge module are both located in the upper part of the first IGBT half-bridge module, the negative electrode and the N terminal of the second IGBT half-bridge module are both located in the upper part of the first IGBT half-bridge module. From the direction of the first IGBT half-bridge module pointing to the second IGBT half-bridge module, they are successively the positive electrode of the first IGBT half-bridge module, the N terminal of the first IGBT half-bridge module, the N terminal of the second IGBT half-bridge module, and the negative electrode of the second IGBT half-bridge module; the AP terminal of the first IGBT half-bridge module is located in the lower part of the first IGBT half-bridge module, the AN terminal of the second IGBT half-bridge module is located in the lower part of the second IGBT half-bridge module, the AP terminal and the AN terminal of the third IGBT half-bridge module are both located in the upper part of the third IGBT half-bridge module, and the AP terminal of the third IGBT half-bridge module is located on one side of the first IGBT half-bridge module, and the AN terminal of the third IGBT half-bridge module is located on one side of the second IGBT half-bridge module.

[0028] As Figure 2 shown, the capacitor bank includes capacitors C1 and C2. The first IGBT half-bridge module internally consists of switching tubes T1 and T5 to form a half-bridge circuit, the second IGBT half-bridge module internally consists of switching tubes T6 and T4 to form a half-bridge circuit, and the third IGBT half-bridge module internally consists of switching tubes T2 and T3 to form a half-bridge circuit. The positive electrode of the first IGBT half-bridge module is terminal "+", and the AP terminal of the first IGBT half-bridge module is the connection point of switching tubes T1 and T5. The negative electrode of the second IGBT half-bridge module is terminal "-", and the AN terminal of the second IGBT half-bridge module is the connection point of switching tubes T6 and T4. The "O" terminal of the third IGBT half-bridge module is the connection point of switching tubes T2 and T3 and is the AC output terminal of the I-type three-level circuit module.

[0029] It can be seen that since the three IGBT half-bridge modules of the I-type three-level circuit module are arranged in an inverted triangular shape, the total length of the copper busbar connecting the capacitor group and the IGBT half-bridge module and the copper busbar connecting the three IGBT half-bridge modules can be the shortest, which can reduce the stray inductance in the circuit, thereby reducing the peak voltage generated by the stray inductance when the IGBT is turned off, reducing the risk of damaging the IGBT and the switching loss.

[0030] Combination Figure 2 The working process of the I-type three-level circuit module is described.

[0031] In the first stage, the switch tube T1 in the first IGBT half-bridge module can be controlled to be turned on and T5 can be turned off, the switch tube T6 in the second IGBT half-bridge module can be controlled to be turned on and T4 can be turned off, the switch tube T2 in the third IGBT half-bridge module can be controlled to be turned on and T3 can be turned off, and the output voltage of the I-type three-level circuit module is Vdc / 2; in the second stage, the switch tube T1 in the first IGBT half-bridge module can be controlled to be turned off and T5 can be turned on, the switch tube T6 in the second IGBT half-bridge module can be controlled to be turned on and T4 can be turned off, the switch tube T2 in the third IGBT half-bridge module can be controlled to be turned on and T3 can be turned off, and the output voltage of the I-type three-level circuit module is 0; in the third stage, the switch tube T1 in the first IGBT half-bridge module can be controlled to be turned off and T5 can be turned on, the switch tube T6 in the second IGBT half-bridge module can be turned off and T4 can be turned on, the switch tube T2 in the third IGBT half-bridge module can be controlled to be turned on and T3 can be turned off, and the output voltage of the I-type three-level circuit module is 0; In the fourth stage, the switch tube T1 in the first IGBT half-bridge module can be controlled to be turned off and T5 can be turned on, the switch tube T6 in the second IGBT half-bridge module can be turned on and T4 can be turned off, the switch tube T2 in the third IGBT half-bridge module can be turned off and T3 can be turned on, and the output voltage of the I-type three-level circuit module is 0; in the fifth stage, the switch tube T1 in the first IGBT half-bridge module can be controlled to be turned on and T5 can be turned off, the switch tube T6 in the second IGBT half-bridge module can be turned on and T4 can be turned off, the switch tube T2 in the third IGBT half-bridge module can be controlled to be turned off and T3 can be turned on, and the output voltage of the I-type three-level circuit module is -Vdc / 2. In this way, the output of three levels of the I-type three-level circuit module is realized.

[0032] like Figure 3 As shown, the utility model embodiment also provides a large storage converter module, including 3 Figure 1In the I-type three-level circuit module, three I-type three-level circuit modules are connected in parallel and arranged in parallel. The circuit principle of the large storage converter module is relatively mature and will not be introduced here. In the large storage converter module, since the layout and devices of the three I-type three-level circuit modules are consistent, the parasitic inductance and resistance of each circuit are consistent, which is conducive to improving the dynamic and static current sharing effects during the IGBT opening and closing process, and improving the utilization rate of the IGBT.

[0033] Although the preferred embodiments of the present invention have been described, those skilled in the art may make other changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications falling within the scope of the present invention.

[0034] Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.

Claims

1. A type I three-level circuit module, characterized in that: It includes a capacitor group, a first IGBT half-bridge module, a second IGBT half-bridge module and a third IGBT half-bridge module; The first IGBT half-bridge module, the second IGBT half-bridge module and the third IGBT half-bridge module are arranged in an inverted triangle shape, the first IGBT half-bridge module and the second IGBT half-bridge module are located above the triangle shape, and the third IGBT half-bridge module is located below the triangle shape; One end of the capacitor group is connected to the positive electrode of the first IGBT half-bridge module, the other end of the capacitor group is connected to the negative electrode of the second IGBT half-bridge module, the N end of the first IGBT half-bridge module and the N end of the second IGBT half-bridge module are both connected to the midpoint of the capacitor group, the AP end of the first IGBT half-bridge module is connected to the AP end of the third IGBT half-bridge module, and the AN end of the second IGBT half-bridge module is connected to the AN end of the third IGBT half-bridge module; The positive electrode and N terminal of the first IGBT half-bridge module are both located at the upper part of the first IGBT half-bridge module, and the negative electrode and N terminal of the second IGBT half-bridge module are both located at the upper part of the first IGBT half-bridge module. From the first IGBT half-bridge module to the second IGBT half-bridge module, the positive electrode of the first IGBT half-bridge module, the N terminal of the first IGBT half-bridge module, the N terminal of the second IGBT half-bridge module, and the negative electrode of the second IGBT half-bridge module are in sequence; The AP end of the first IGBT half-bridge module is located at the lower part of the first IGBT half-bridge module, the AN end of the second IGBT half-bridge module is located at the lower part of the second IGBT half-bridge module, the AP end and the AN end of the third IGBT half-bridge module are both located at the upper part of the third IGBT half-bridge module, and the AP end of the third IGBT half-bridge module is located on one side of the first IGBT half-bridge module, and the AN end of the third IGBT half-bridge module is located on one side of the second IGBT half-bridge module.

2. A large storage converter module, characterized in that: It comprises the three I-type three-level circuit modules as claimed in claim 1, wherein the three I-type three-level circuit modules are connected in parallel and arranged in parallel.

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