Gas reactor applied to semiconductor process waste gas treatment
By designing arc chamfers at the corners of the body extending on the top of the inner cavity of the gas reactor, and combining the cone structure and the design of the diverter and airway, the problems of waste gas accumulation and structural corrosion caused by the dead corners of the gas reactor are solved, and the effect of smooth airflow and extended equipment life is achieved.
Patent Information
- Application Number
- CN202421785585.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-26
- Publication Date
- 2025-04-25
- Estimated Expiration
- 2034-07-26
AI Technical Summary
The existing gas reactors form dead corners in the inner corner area at the top, resulting in waste gas accumulation and structural corrosion, shortening the service life of the equipment.
A gas reactor is designed, and the inner corner of the top extension of the inner cavity is designed with arc-surface chamfered design, combining a small upper and a large lower conical structure and a diverter and an airway in the inner cavity to ensure smooth gas guidance and reduce impurity accumulation.
The arc-surface chamfer design avoids gas retention, the conical cylinder structure promotes smooth airflow, and the diverter and airways uniformly divert the gas, increasing the contact area and thermal conductivity, effectively reducing structural wear and impurities accumulation, and extending the equipment life.
Smart Images
Figure CN222788893U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of waste gas treatment equipment, in particular to a gas reactor used for waste gas treatment in semiconductor manufacturing processes. Background Art
[0002] In the production process of the semiconductor industry, a large amount of chemicals and special gases are used, and a large amount of toxic and harmful process waste gas is continuously generated in the production process.
[0003] In the electric heating semiconductor waste gas treatment system, the top of the gas reactor is often set to a flat end face structure for the installation of the heater. For the convenience of processing, the inner corner of the outer edge of the top of the gas reactor is often made into a right angle, and the side air inlet is located below the inner corner. Therefore, the gas reactor forms a dead angle in the inner corner area of its top. A part of the waste gas enters the gas reactor and accumulates in the dead angle area for a long time, which makes the cavity structure in this area easy to be corroded. In fact, since the waste gas often carries impurities, some impurities will quickly reach the dead angle area after entering the gas reactor, causing impact on the inner wall of the dead angle area. The corrosion plus the physical impact will greatly accelerate the structural wear of this area and shorten the service life of the equipment. Utility Model Content
[0004] The utility model provides a gas reactor used for semiconductor process waste gas treatment, which is conducive to solving the problem that corrosive gas is easily accumulated at the air inlet end of some existing gas reactors, resulting in a greatly shortened service life of the equipment.
[0005] The utility model is achieved in this way:
[0006] A gas reactor used for semiconductor process waste gas treatment, comprising an inner cavity and an outer cavity arranged inside and outside, the inner cavity being a conical cylinder structure that is small at the top and large at the bottom, an inner cavity is arranged inside the inner cavity, an outer cavity is arranged between the inner cavity and the outer cavity, a diverter is arranged in the inner cavity, a plurality of air channels are evenly arranged on the diverter, the air channels penetrate the diverter longitudinally, an extension body extending upward is arranged on the top of the inner cavity, the top of the extension body is a horizontal end face, the inner corner of the top has an arc chamfer, an air inlet pipe is connected to the side wall of the extension body, the inner end of the air inlet pipe passes through the interior of the extension body and is connected to the inner cavity, and the outer end of the air inlet pipe is connected to an external air supply pipeline.
[0007] On the basis of the above technical solution, the outer periphery of the diverter is closely connected to the inner wall of the inner cavity.
[0008] On the basis of the above technical solution, the diverter and the inner cavity are connected in a detachable structure.
[0009] Based on the above technical solution, the inner end of the air intake pipe is located below the cambered surface.
[0010] Based on the above technical solution, a thermal insulation filler is provided in the outer cavity.
[0011] Based on the above technical solution, the inner hole of the airway is narrow at the top and wide at the bottom.
[0012] On the basis of the above technical solution, the inner hole of the airway is a conical through hole structure.
[0013] On the basis of the above technical solution, a flow guide structure is provided on the inner wall of the airway.
[0014] On the basis of the above technical solution, the guide structure is a guide blade with a spiral flange.
[0015] Compared with the prior art, the utility model has at least the following advantages:
[0016] 1. The utility model forms a smooth inner contour by setting the inner corner of the top extension of the inner cavity to a curved chamfer. When the gas enters this area, it can be smoothly guided by the smooth inner contour to avoid being trapped in the top corner area.
[0017] 2. The utility model configures the bottom area of the inner cavity to be a conical structure that is small at the top and large at the bottom, so that after the semiconductor process exhaust gas enters the gas reactor, the pressure gradually decreases toward the output end, which is conducive to smooth gas flow and does not cause the bottom inner wall to shrink to form an impurity accumulation bearing structure. Therefore, it can effectively reduce impurity accumulation.
[0018] 3. The utility model sets a diverter in the inner cavity and utilizes evenly distributed airways to evenly divert the gas, which is beneficial to evenly disperse the gas in each flowing area. The diverter can increase the contact area with the gas. The diverter can also serve as a heat-conducting structure, which can make the temperature distribution more uniform and stable in a heat-insulating environment. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] In order to more clearly illustrate the technical solution of the implementation mode of the utility model, the drawings required for use in the implementation mode will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the utility model and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying creative work.
[0020] Figure 1 A simplified structural diagram of a gas reactor in one embodiment;
[0021] Figure 2 for Figure 1 Schematic diagram of the structure of the middle splitter;
[0022] Figure 3 is a schematic diagram of the assembly structure of a gas reactor in one embodiment;
[0023] Figure 4 FIG. 4 is a schematic diagram of the structure of the airway in another embodiment.
[0024] Labels in the figure: 1. outer cavity; 11. outer cavity; 2. inner cavity; 21. inner cavity; 3. extension body; 31. arc chamfer; 4. air inlet pipe; 5. diverter; 6. air duct; 7. guide vane; a. frame; b. cooler; c. sprinkler. DETAILED DESCRIPTION
[0025] In order to make the purpose, technical scheme and advantages of the embodiments of the utility model clearer, the technical scheme in the embodiments of the utility model will be clearly and completely described below in conjunction with the drawings in the embodiments of the utility model. Obviously, the described embodiments are part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model. Therefore, the following detailed description of the embodiments of the utility model provided in the drawings is not intended to limit the scope of the utility model for which protection is claimed, but merely represents selected embodiments of the utility model.
[0026] In the description of the present invention, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.
[0027] It should be noted that when an element is referred to as being "fixed to" another element, it may be directly on the other element or there may be a central element. When an element is considered to be "connected to" another element, it may be directly connected to an element or there may be a central element at the same time. The terms "vertical", "horizontal", "left", "right" and similar expressions used herein are for illustrative purposes only and do not represent the only implementation method.
[0028] The utility model is further described in detail below with reference to the accompanying drawings and specific embodiments.
[0029] Example 1: Combination Figure 1-3 This embodiment discloses a gas reactor for treating waste gas in semiconductor manufacturing process, comprising an outer cavity 1, an inner cavity 2, an extension body 3, an air inlet pipe 4, a flow divider 5 and an air channel 6. Figure 3The assembled gas reactor is installed inside a frame a together with cooler b, sprayer c and other devices to form a complete equipment structure. Its overall structure and working principle are prior art and will not be described in detail here. Those skilled in the art can select and implement from the prior art according to actual operating conditions.
[0030] The inner cavity 2 and the outer cavity 1 are arranged inside and outside, and the outer cavity 1 serves as an outer wrapping structure of the inner cavity 2. Firstly, the outer cavity 1 can protect the inner cavity 2 and make the installation state of the inner cavity 2 more stable and reliable.
[0031] The inner cavity 2 is a conical structure that is small at the top and large at the bottom. An inner cavity 21 is provided inside the inner cavity 2 , and an outer cavity 11 is provided between the inner cavity 2 and the outer cavity 1 .
[0032] The inner cavity 21 is used for gas flow, and its structure of being small at the top and large at the bottom allows the pressure of the semiconductor process exhaust gas to gradually decrease toward the output end after entering the gas reactor. This is conducive to smooth gas flow, and there will be no situation where the inner wall of the bottom is shrunken to form an impurity accumulation bearing structure. Therefore, it can effectively reduce impurity accumulation.
[0033] The outer cavity 11 is used for filling the filler. In the present embodiment, the outer cavity 11 is provided with a thermal insulation filler, specifically thermal insulation cotton, which cooperates with the outer cavity 1 to form a thermal insulation layer structure for stabilizing the internal temperature conditions.
[0034] Furthermore, an extension body 3 extending upward is provided at the top of the inner cavity 2. The longitudinal section profile of the extension body 3 is an "n"-shaped structure. The top of the extension body 3 is a horizontal end face, which is convenient for the assembly of the burner. The inner corner of the top has a curved chamfer 31. An air inlet pipe 4 is connected to the side wall of the extension body 3. The inner end of the air inlet pipe 4 passes through the interior of the extension body 3 and communicates with the inner cavity 21. The outer end of the air inlet pipe 4 is connected to the external air supply pipeline. The inner end of the air inlet pipe 4 is located below the curved chamfer 31. This structure forms a smooth inner contour. When the gas enters this area, it can be smoothly guided with the help of the smooth inner contour to avoid being trapped in the top corner area.
[0035] Furthermore, a flow divider 5 is provided in the inner cavity 21, referring to Figure 1 and Figure 2 The diverter 5 is evenly provided with a plurality of air channels 6, which penetrate the diverter 5 longitudinally, and the inner hole of each of the air channels 6 is narrow at the top and wide at the bottom, and the inner hole of the air channel 6 is a grid through-hole structure. The gas can be evenly diverted by using the evenly distributed air channels 6, which is conducive to evenly breaking up the gas in each flowing area, and the diverter 5 can increase the contact area with the gas, and the diverter 5 can also serve as a heat-conducting structure, which can make the temperature distribution more uniform and stable in a heat-insulating environment.
[0036] It should be noted that the outer periphery of the diverter 5 is fittedly connected to the inner wall of the inner cavity 2. In the present embodiment, the outer wall of the diverter 5 is tightly welded and fixed to the inner wall of the inner cavity 2. In other embodiments, the diverter 5 and the inner cavity 2 are connected by a detachable structure, such as a snap-fit, bolt or other connection structure.
[0037] Example 2: Based on Example 1, Figure 4 As shown, in this embodiment, the inner hole of the air channel 6 is a conical through hole structure, and a flow guide structure is provided on the inner wall of the air channel 6.
[0038] Furthermore, the guide structure is a guide blade 7 with a spiral flange, so that when the gas flows through the air duct 6, the guide blade 7 can have a certain degree of guide control effect on the airflow, so that the gas moves in a spiral shape. This method can improve the stability of the airflow direction and the airflow interaction effect, that is, the mixing effect, so that the exhaust gas and the functional gas can be fully mixed and contacted to produce a chemical reaction to achieve the purification effect.
[0039] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features may be replaced by equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims
1. A gas reactor for treating waste gas in semiconductor manufacturing process, characterized in that: The invention comprises an inner cavity (2) and an outer cavity (1) arranged inside and outside, wherein the inner cavity (2) is a conical structure with a small top and a large bottom, an inner cavity (21) is arranged inside the inner cavity (2), an outer cavity (11) is arranged between the inner cavity (2) and the outer cavity (1), a flow divider (5) is arranged in the inner cavity (21), a plurality of air passages (6) are evenly arranged on the flow divider (5), and the air passages (6) penetrate the flow divider (5) longitudinally, an extension body (3) extending upward is arranged on the top of the inner cavity (2), the top of the extension body (3) is a horizontal end face, and the inner corner of the top has a curved chamfer (31), an air inlet pipe (4) is connected to the side wall of the extension body (3), the inner end of the air inlet pipe (4) passes through the interior of the extension body (3) and communicates with the inner cavity (21), and the outer end of the air inlet pipe (4) is connected to an external air supply pipeline.
2. A gas reactor for treating waste gas in semiconductor manufacturing process according to claim 1, characterized in that: The outer periphery of the flow divider (5) is closely connected to the inner wall of the inner cavity (2).
3. A gas reactor for treating waste gas in semiconductor manufacturing process according to claim 2, characterized in that: The diverter (5) and the inner cavity (2) are connected in a detachable manner.
4. The gas reactor for treating waste gas in semiconductor manufacturing process according to claim 1, characterized in that: The inner end of the air inlet pipe (4) is located below the cambered corner (31).
5. The gas reactor for treating waste gas in semiconductor manufacturing process according to claim 1, characterized in that: The outer cavity (11) is provided with a heat-insulating filler.
6. The gas reactor for treating waste gas in semiconductor manufacturing process according to claim 1, characterized in that: The inner hole of the airway (6) is narrow at the top and wide at the bottom.
7. A gas reactor for treating waste gas in semiconductor manufacturing process according to claim 6, characterized in that: The inner hole of the air channel (6) is a conical through-hole structure.
8. The gas reactor for treating waste gas in semiconductor manufacturing process according to claim 7, characterized in that: A flow guiding structure is provided on the inner side wall of the air passage (6).
9. The gas reactor for treating waste gas in semiconductor manufacturing process according to claim 8, characterized in that: The flow guide structure is a flow guide blade (7) with a spiral flange.