Symmetrical deposition device

Abstract

The utility model discloses a symmetrical deposition device, which is used for simultaneously depositing and coating the front and back surfaces of a thin plate coiled material, and comprises two PECVD (Plasma Enhanced Chemical Vapor Deposition) mechanisms which are symmetrically arranged up and down, a deposition cavity for depositing and coating the front and back surfaces of the thin plate coiled material is formed between the two PECVD mechanisms, and the deposition cavity is provided with a through hole for the thin plate coiled material to pass through continuously; power supplies of the PECVD mechanisms are correspondingly and electrically connected with the two PECVD mechanisms respectively and are used for ionizing process gas to generate plasmas, and the plasmas generated by ionization enter a common deposition cavity of the two PECVD mechanisms to realize deposition coating of the sheet coiled material. As the front and back surfaces of the sheet coiled material are simultaneously positioned in the same deposition cavity, stable and uniform coating layers can be simultaneously formed on the front and back surfaces of the sheet coiled material.

Description

Technical Field

[0001] The utility model relates to a deposition structure for coating, in particular to a deposition structure for double-sided deposition coating of a thin plate coil. Background Art

[0002] With the rapid development of economic construction, microelectronics technology has developed rapidly, and the development and use of plasma enhanced chemical vapor deposition (PECVD) equipment has become increasingly widespread. PECVE equipment uses high-frequency power glow discharge to generate plasma chemical deposition equipment. Due to the presence of plasma, the deposition temperature is reduced. At present, PECVE equipment is widely used in the liquid crystal display industry, solar cell industry, semiconductor devices and large-scale integrated circuit manufacturing industries.

[0003] Plasma enhanced chemical vapor deposition (PECVD) is usually used to deposit coating layers on the A and B sides of a thin sheet coil to form a double-sided surface with a functional layer. The A side and the B side are the opposite sides of the thin sheet coil. For example, the coating layers are deposited on the A and B sides of the silicon substrate of the HIT battery. PECVD is usually completed by introducing a precursor gas or a gas mixture into a vacuum chamber containing a substrate, and applying radio frequency to the precursor gas or gas mixture so that it is energized (e.g., excited) into a plasma, which can react with each other or with the substrate surface material to deposit a coating layer.

[0004] At present, when deposition is required on both sides of a thin sheet coil, the thin sheet coil with one side deposited needs to be moved to another deposition device for deposition on the other side. This method of forming a double-sided deposited coating layer requires the thin sheet coil to be transferred to deposit both sides, and requires repeated repetitive operations, resulting in low deposition efficiency and cumbersome operations.

[0005] As can be seen from the above, at present, for the double-sided deposition coating of thin coils, coating can only be performed one side at a time, and it is impossible to achieve simultaneous deposition coating on both sides. With the development and demand of various flexible coils, thin coils with both the flexibility of coils and the stability of thin coils have emerged, and are widely used in the manufacturing process of various circuit boards and chips. Such as copper clad plate coating, PET coating, PU coating, PVC coating, PC coating, PI coating, TPU coating, etc., the physical and chemical properties of these thin coils after coating not only maintain the original mechanical properties but also have the special functions corresponding to the coating layer.

[0006] Therefore, there is an urgent need for a deposition structure that can simultaneously perform double-sided plasma deposition coating on a thin sheet coil. Utility Model Content

[0007] The utility model aims to provide a symmetrical deposition device which can perform double-sided plasma deposition coating on continuously input thin plate coils.

[0008] To achieve the above-mentioned purpose, the utility model provides a symmetrical deposition device, which is arranged between an external unwinding device and a winding device, and performs double-sided plasma deposition coating on continuously input thin plate coils, wherein the symmetrical deposition device includes two PECVD mechanisms symmetrically arranged in an upper and lower manner, and the PECVD mechanism includes a gas distribution box, an electrode member and a support frame. The gas distribution box is a hollow structure, and the hollow structure forms a gas source cavity. The gas distribution box is provided with an air inlet channel connected to the gas source cavity for the process gas to pass through. The bottom of the gas distribution box is a conductive structure, and a plurality of channels are opened through the bottom of the gas distribution box; the support frame is an insulating structure, and the support frame is connected to the bottom of the gas distribution box; the electrode member is a grid structure, and the electrode member Connected in the support frame, the bottom of the gas distribution box is arranged in parallel with the electrode member at a certain distance through the support frame, the bottom of the gas distribution box is insulated from the electrode member through the support frame, and the distance between the bottom of the gas distribution box and the electrode member forms an ionization glow zone for ionization of process gas; the gas source chamber is connected with the ionization glow zone through the channel; the support frames of the two PECVD mechanisms are connected to form a connecting piece, and the two support frames are connected to form a certain gap between the two electrode members, and the gap forms a deposition chamber, the ionization glow zone is connected with the deposition chamber through a grid structure, and the connecting piece is opened through the deposition chamber to allow the thin plate coil to continuously pass through the deposition chamber;

[0009] The connecting piece is provided with an air extraction hole for connecting with an external air extraction device, and the air extraction hole is connected with the deposition chamber;

[0010] A power source, the bottom of the air distribution box and the electrode member are electrically connected to the two poles of the power source respectively.

[0011] Compared with the prior art, before the implementation of the present invention, the starting end of the thin plate coil on the external unwinding device is first passed through the opening of the deposition chamber of the present invention, and the starting end of the thin plate coil passing through the opening is fixed on the external winding device, so that the thin plate coil is in a flat and taut state in the deposition chamber of the present invention. After completing the above operations before implementation, the external unwinding device and the winding device are started, so that the thin plate coil continuously passes through the deposition chamber; at the same time, the power supply of the present invention is started and the process gas is introduced into the air inlet channel; the process gas entering the gas source chamber enters the ionization glow zone through the channel and is ionized to generate plasma, and the ionized plasma enters the deposition chamber through the grid structure. Since the present invention adopts two symmetrically arranged PECVD mechanisms, and the two PECVD mechanisms share a deposition chamber, the thin plate coil passing through the deposition chamber through the opening is completely immersed in the plasma environment full of ionization, so that the deposition chamber of the present invention deposits and coats the front and back sides of the thin plate coil at the same time. Since the utility model adopts plasma deposition coating of PECVD technology, and two PECVD mechanisms are symmetrically arranged and share a deposition chamber, it not only ensures the stability of the coating layer adhesion, but also further ensures the uniformity and consistency of the coating layer on both sides, thereby effectively ensuring the quality of the double-sided plasma deposition coating of the thin plate coil by the utility model. Since the utility model adopts a PECVD mechanism to perform precipitation coating to form the coating layer, the thickness of the coating layer is at the nanometer level and will not affect the overall thickness of the thin plate coil. After the thin plate coil is coated by the utility model, its physical and chemical properties maintain the original mechanical properties while also adding the special functions corresponding to the coating layer material. In addition, it can be seen that the utility model sets up a gas source chamber, an ionization glow zone and a deposition chamber which are interconnected and independent, so that the ionization glow zone only ionizes the process gas; the plasma generated by the ionization enters the independent deposition chamber through the grid structure to deposit and coat the thin plate coil. The utility model completes the ionization and deposition of the process gas in independent areas, effectively avoiding the technical problem of plasma attacking the surface of the deposited film, and substantially solves the technical problem of the deposited film being attacked and causing serious defects caused by the simultaneous ionization and deposition of the process gas in the ionization glow zone in the prior art, further ensuring the uniformity and consistency of the double-sided deposition coating of the thin plate coil of the utility model, and greatly improving the quality of the deposited film. It is highly practical and suitable for wide promotion and use.

[0012] Preferably, in the symmetrical deposition device of the present invention, a plug hole is provided on the support frame corresponding to the grid structure of the electrode member, and the electrode member is detachably inserted into the plug hole.

[0013] Preferably, in the symmetrical deposition device of the present invention, the electrode member includes a conductive strip and an electrode strip, the electrode strips are equidistantly spaced and connected in parallel to the conductive strips, the electrode strips are equidistantly spaced to form the grid structure, and the free ends of the electrode strips are detachably inserted into the sockets.

[0014] Preferably, in the symmetrical deposition device of the present invention, the air inlet channel is located at the center of the air distribution box.

[0015] Preferably, in the symmetrical deposition device of the present invention, the center of the bottom of the gas distribution box faces the air inlet channel, the channel has a hole-like structure, the channels are arranged in an array, and the apertures of the channels gradually increase from the center of the bottom of the gas distribution box outward.

[0016] Preferably, in the symmetrical deposition device of the present invention, the center of the bottom of the gas distribution box faces the air inlet channel, the channel is a strip-shaped through-groove structure, the channels are arranged side by side, and the slot width of the channel gradually increases from the center of the bottom of the gas distribution box to the outside. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a schematic diagram of the cross-sectional structure of the symmetrical deposition device of the utility model along the transmission direction of the thin plate coil.

[0018] Figure 2 is perpendicular to Figure 1 Schematic diagram of the cross-sectional structure in the direction.

[0019] Figure 3 It is a structural schematic diagram of the PECVD mechanism of the utility model.

[0020] Figure 4 yes Figure 3 Schematic diagram of the decomposition structure.

[0021] Figure 5 It is a schematic diagram of an equivalent structure formed by an ionized glow zone and a deposition chamber in a symmetrical deposition device of the utility model.

[0022] Figure 6 It is a schematic structural diagram of a first embodiment of a deposition port in a symmetrical deposition device of the utility model.

[0023] Figure 7 It is a schematic structural diagram of a second embodiment of a deposition port in a symmetrical deposition device of the utility model. DETAILED DESCRIPTION

[0024] The following is a clear and complete description of the technical solutions in the embodiments of the present application in conjunction with specific implementation examples and the accompanying drawings, and the technical solutions of the utility model are explained. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application. The specific implementation methods of the utility model are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are explained to facilitate a full understanding of the utility model. However, the utility model can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the utility model, so the utility model is not limited by the specific embodiments disclosed below. Now, embodiments of the utility model are described with reference to the accompanying drawings, and similar component numbers in the accompanying drawings represent similar components.

[0025] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0026] like Figure 1 As shown, the symmetrical deposition device 100 of the utility model is used to deposit coatings on both sides of the thin plate coil 200 at the same time, so that the physical and chemical properties of the thin plate coil 200 are increased with new functions on the basis of maintaining the original mechanical properties, and the increased new functions are the functions corresponding to the film layer material. Specifically, the symmetrical deposition device 100 of the utility model is arranged between an external unwinding device and a winding device, the unwinding device is used to unwind the thin plate coil 200 into the symmetrical deposition device 100 of the utility model for deposition coating, and the winding device is used to wind up the thin plate coil 200 that has completed coating. The cooperation between the unwinding device and the winding device enables the thin plate coil 200 to continuously pass through the symmetrical deposition device 100 of the utility model, thereby completing the continuous input deposition coating of the thin plate coil 200. The external unwinding device and winding device of the utility model can adopt the existing general roller structure unwinding device, and the rotation speed and roller size of the two are the same. The following is combined with Figure 1 - Figure 7 The symmetrical deposition device 100 of the present invention is further described in detail:

[0027] like Figure 1 - Figure 7As shown, the symmetrical deposition device 100 of the utility model is arranged between the unwinding device and the winding device of the outside world, and performs double-sided plasma deposition coating on the continuously input thin plate coil 200. The symmetrical deposition device 100 of the utility model includes two PECVD mechanisms 12 symmetrically arranged in the upper and lower parts. The PECVD mechanism 12 of the utility model includes a gas distribution box 13, an electrode member 14 and a support frame 15. The gas distribution box 13 of the utility model is a hollow structure, and the hollow structure of the gas distribution box 13 forms a gas source chamber 16. The gas distribution box 13 of the utility model is provided with an air inlet channel 17 connected to the gas source chamber 16 for the passage of process gas; the process gas is provided by the outside world. Specifically, according to the required function, the technicians in this field can select the process gas corresponding to the required function from the existing process gases without any creative labor, and use it as the process gas for PECVD deposition coating. The bottom 131 of the air distribution box 13 of the utility model is a conductive structure, and a plurality of channels 132 are opened through the bottom 131 of the air distribution box 13. Since the channels 132 are opened through the bottom 131 of the air distribution box 13, the channels 132 are connected to the gas source chamber 16. The support frame 15 of the utility model is an insulating structure, and the support frame 15 is fixedly connected to the bottom 131 of the air distribution box 13. The electrode member 14 of the utility model is a grid structure, and the electrode member 14 is connected to the support frame 15. The bottom 131 of the air distribution box 13 of the utility model is arranged in parallel with the electrode member 14 in a certain distance and facing each other by the support frame 15. Since the support frame 15 is an insulating structure and the electrode member 14 is arranged in the support frame 15, the bottom 131 of the air distribution box 13 of the utility model is insulated from the electrode member 14 by the support frame 15. The distance between the bottom 131 of the gas distribution box 13 of the utility model and the electrode member 14 forms an ionized glow zone 2 for ionizing the process gas. The gas source chamber 16 of the utility model is connected to the ionized glow zone 2 via the channel 132 on the bottom 131 of the gas distribution box 13. The support frames 15 of the two PECVD mechanisms 12 of the utility model are butt-jointed to form a connector 3; specifically, the connector 3 forms an integrated structure by butt-jointing and fixing the two support frames 15. The two support frames 15 are butt-jointed to form a certain gap between the electrode members 14 of the two PECVD mechanisms 12, and the gap forms a deposition chamber 4 for the thin plate coil 200 to pass through and perform PECVD deposition coating. The ionization glow zone 2 of the utility model is connected with the deposition chamber 4 through the grid structure of the electrode member 14. The well-known grid structure has a gap 14a, so the ionization glow zone 2 of the utility model is connected with the deposition chamber 4 through the gap 14a of the grid structure 14 of the electrode member 14; the connecting member 3 is provided with a through opening 31 for the thin plate coil 200 to pass through the deposition chamber 4 horizontally. The connecting member 3 of the utility model is provided with an exhaust hole 32 for communicating with an external exhaust device, and the exhaust hole 32 is connected with the deposition chamber 4.The utility model further comprises a power source 5 for ionizing the process gas, and the bottom 131 of the gas distribution box 13 and the electrode member 14 are electrically connected to the two poles of the power source 5 respectively. Figure 5 An embodiment is provided in which each PECVD mechanism 12 independently corresponds to a power source 5 ; in the utility model, two PECVD mechanisms 12 can also share a power source 5 .

[0028] like Figure 1 - Figure 4 As shown, specifically, a socket 151 is provided on the support frame 15 of the utility model corresponding to the grid structure of the electrode member 14, and the electrode member 14 is detachably inserted into the socket 151. The cooperation between the two is achieved by providing the socket 151 for inserting the grid structure of the electrode member 14 on the support frame 15, so that the electrode member 14 can be detachably installed in the support frame 15, and the installation efficiency and the convenience of maintenance and repair are also improved, and the practicality is strong. More specifically, the electrode member 14 of the utility model includes a conductive strip 141 and an electrode strip 142, and the electrode strips 142 are connected to the conductive strip 141 at equal intervals and in parallel, and the equal intervals between the electrode strips 142 form the grid structure, and the free end of the electrode strip 142 is detachably inserted into the socket 151 of the support frame 15. Furthermore, in order to facilitate the operation of inserting the electrode bar 142 into the socket 151, the conductive strip 141 protrudes outwardly with a graspable bump 143, and by grasping the bump 143, the grid structure electrode bar 142 can be quickly and conveniently inserted into the socket 151 or pulled out from the socket 151.

[0029] like Figure 1 - Figure 4 As shown, in order to further improve the uniformity of the deposited film on the thin plate coil 200, the air inlet channel 17 of the symmetrical deposition device 100 of the utility model is located at the center of the air distribution box 13. When the external process enters the air distribution box 13, it can be fully buffered in the gas source chamber 16 of the air distribution box 13, so that the density and flow rate of the process gas flowing from each channel 132 into the ionization glow area 2 are basically consistent, ensuring that the process gas can be uniformly ionized in the ionization glow area 2.

[0030] like Figure 1 , Figure 2 and Figure 6As shown, in order to further improve the uniformity of the deposited film on the thin plate coil 200. The center of the bottom 131 of the gas distribution box 13 of the symmetrical deposition device 100 of the utility model is directly opposite to the air inlet channel 17, and the channel 132 on the bottom 131 is a hole-like structure, and the channel 131 is arranged in an array; further, the aperture of the channel 131 gradually increases from the center of the bottom 131 of the gas distribution box 13 to the outside. The channel 131 designed as above can further make the process gas entering the ionization glow zone 2 more evenly distributed in the ionization glow zone 2, thereby ensuring that the process gas can be evenly ionized in the ionization glow zone 2.

[0031] like Figure 1 , Figure 2 and Figure 7 As shown, in order to further improve the uniformity of the deposited film on the thin plate coil 200. The center of the bottom 131 of the gas distribution box 13 of the symmetrical deposition device 100 of the utility model is directly opposite to the air inlet channel 17, and the channel 132 of the bottom 131 is a strip-shaped through-slot structure, and the channels 131 are arranged side by side; further, the slot width of the channel 131 gradually increases from the center of the bottom 131 of the gas distribution box 13 to the outside. The channel 131 designed as above can further make the process gas entering the ionization glow zone 2 more evenly distributed in the ionization glow zone 2, thereby ensuring that the process gas can be evenly ionized in the ionization glow zone 2.

[0032] Combination Figure 1 - Figure 7As shown, before the implementation of the present invention, the starting end of the thin plate coil 200 on the external unwinding device is first passed through the opening 31 of the deposition chamber 4 of the present invention, and the starting end of the thin plate coil 200 passing through the opening 31 is fixed on the external winding device, so that the thin plate coil 200 is in a flat and taut state in the deposition chamber 4 of the present invention. After completing the above operations before implementation, the external unwinding device and winding device are started, so that the thin plate coil 200 continuously passes through the deposition chamber 4; at the same time, the power supply 5 of the present invention is started and the process gas is introduced into the air inlet channel 17; the process gas entering the gas source chamber 16 enters the ionization glow zone 2 through the channel 132 and is ionized to generate plasma, and the ionized plasma enters the deposition chamber 4 through the grid structure. Since the utility model adopts two symmetrically arranged PECVD mechanisms 12, and the two PECVD mechanisms 12 share a deposition chamber 4, the thin plate coil 200 passing through the deposition chamber 4 through the opening 31 is completely immersed in the plasma environment full of ionization, so that the deposition chamber 4 of the utility model deposits and coats the front and back sides of the thin plate coil 200 at the same time. Since the utility model adopts plasma deposition coating of PECVD technology, and the two PECVD mechanisms 12 are symmetrically arranged and share a deposition chamber 4, the stability of the coating layer adhesion is ensured, and the uniformity and consistency of the coating layer on the front and back sides are further ensured, thereby effectively ensuring the quality of the double-sided plasma deposition coating of the thin plate coil 200 by the utility model. Since the utility model adopts the PECVD mechanism 12 to perform precipitation coating to form the coating layer, the thickness of the coating layer is at the nanometer level, which will not affect the overall thickness of the thin plate coil 200. After the thin plate coil 200 is coated by the utility model, its physical and chemical properties maintain the original mechanical properties while adding the special functions corresponding to the coating layer material. In addition, it can be seen that the utility model sets the gas source chamber 16, the ionization glow zone 2 and the deposition chamber 4 which are interconnected and independent, so that the ionization glow zone 4 only ionizes the process gas; the plasma generated by the ionization enters the independent deposition chamber 4 through the grid structure to deposit the thin plate coil 200. The utility model completes the ionization and deposition of the process gas in independent areas, effectively avoiding the occurrence of the technical problem of the plasma attacking the surface of the deposited film, and substantially solves the technical problem of the deposited film being attacked and causing serious defects caused by the ionization and deposition of the process gas in the ionization glow zone in the prior art, further ensuring the uniformity and consistency of the double-sided deposition coating of the thin plate coil by the utility model, and greatly improving the quality of the deposited film. It is highly practical and suitable for wide promotion and use.

[0033] For those skilled in the art, it is obvious that the utility model is not limited to the details of the above exemplary embodiments, and the utility model can be implemented in other specific forms without departing from the spirit or basic features of the utility model. Therefore, no matter from which point of view, the embodiments should be regarded as exemplary and non-restrictive. The scope of the utility model is limited by the attached claims rather than the above description, so it is intended to include all changes that fall within the meaning and scope of the equivalent elements of the claims in the utility model. Any figure mark in the claims should not be regarded as limiting the claims involved. At the same time, what is disclosed above is only the preferred embodiment of the utility model, and of course it cannot be used to limit the scope of rights of the utility model. Therefore, equivalent changes made according to the scope of the patent application of the utility model are still within the scope covered by the utility model.

Claims

1. A symmetrical deposition device, arranged between an unwinding device and a winding device in the outside, performs double-sided plasma deposition coating on a continuously input thin sheet coil, characterized in that: The symmetrical deposition device includes two PECVD mechanisms symmetrically arranged in an upper and lower manner, and the PECVD mechanism includes a gas distribution box, an electrode member and a support frame. The gas distribution box is a hollow structure, and the hollow structure forms a gas source cavity. The gas distribution box is provided with an inlet channel connected to the gas source cavity for the process gas to pass through. The bottom of the gas distribution box is a conductive structure, and a plurality of channels are opened through the bottom of the gas distribution box; the support frame is an insulating structure, and the support frame is connected to the bottom of the gas distribution box; the electrode member is a grid structure, and the electrode member is connected to the support frame, and the bottom of the gas distribution box is directly opposite to the electrode member through the support frame. The two support frames of the PECVD mechanism are arranged in parallel with each other at a certain distance, the bottom of the gas distribution box is insulated from the electrode member by the support frame, and the distance between the bottom of the gas distribution box and the electrode member forms an ionization glow zone for ionization of process gas; the gas source chamber is connected with the ionization glow zone through the channel; the support frames of the two PECVD mechanisms are butt-jointed to form a connecting member, and the two support frames are butt-jointed to form a certain gap between the two electrode members, and the gap forms a deposition chamber, the ionization glow zone is connected with the deposition chamber by a grid structure, and the connecting member is provided with a through-hole for the thin plate coil to continuously pass through the deposition chamber when it is facing the deposition chamber; The connecting piece is provided with an air extraction hole for connecting with an external air extraction device, and the air extraction hole is connected with the deposition chamber; A power source, the bottom of the air distribution box and the electrode member are electrically connected to the two poles of the power source respectively.

2. The symmetrical deposition device according to claim 1, characterized in that: The support frame is provided with an insertion hole corresponding to the grid structure of the electrode member, and the electrode member is detachably inserted into the insertion hole.

3. The symmetrical deposition device according to claim 2, characterized in that: The electrode member includes a conductive strip and an electrode strip, wherein the electrode strips are connected to the conductive strip in parallel and at equal intervals, and the electrode strips are arranged at equal intervals to form the grid structure, and the free ends of the electrode strips are detachably inserted into the jacks.

4. The symmetrical deposition device according to claim 1, characterized in that: The air inlet passage is located at the center of the air distribution box.

5. The symmetrical deposition device according to claim 4, characterized in that: The center of the bottom of the air distribution box faces the air inlet channel. The channel is a hole-shaped structure. The channels are arranged in an array. The apertures of the channels gradually increase from the center of the bottom of the air distribution box outward.

6. The symmetrical deposition device according to claim 4, characterized in that: The center of the bottom of the air distribution box faces the air inlet channel, and the channel is a strip-shaped through-slot structure. The channels are arranged side by side, and the slot width of the channel gradually increases from the center of the bottom of the air distribution box to the outside.

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