Single crystal furnace outer guide cylinder with double-layer oxygen reduction function
By providing an outer cavity on the outer periphery of the flow tube outside the single crystal furnace and connecting with the air conduit assembly to form a gas flow channel, the problem of low SiO removal efficiency in the prior art is solved, significantly reducing the oxygen content in the single crystal silicon rod and improving product quality.
Patent Information
- Application Number
- CN202421687532.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-17
- Publication Date
- 2025-04-25
- Estimated Expiration
- 2034-07-17
AI Technical Summary
The existing single crystal furnace thermal field diversion cylinder structure leads to a high oxygen content in the single crystal silicon rod, and the SiO removal efficiency is low during the crystal drawing process.
A single crystal furnace external flow tube with double-layer oxygen reduction is designed. An outer cavity is provided on the outer periphery of the outer flow tube to communicate with the air conduit assembly to form a gas flow channel, increase the flow rate of argon gas above the silicon liquid surface, and improve the removal efficiency of SiO.
Significantly reduce the oxygen content in the single crystal silicon rod, improve product quality, enhance the ability of argon to blow SiO, and improve the SiO take-away rate.
Smart Images

Figure CN222795789U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of single crystal silicon manufacturing, in particular to a single crystal furnace outer guide tube with double-layer oxygen reduction. Background Art
[0002] With the development of the industry, the quality of single crystal silicon has been gradually improved, among which the low oxygen content in single crystal silicon is particularly important. The oxygen content affects the quality of the finished single crystal silicon product. The oxygen content in the single crystal silicon rod needs to be reduced during the crystal pulling process. The existing single crystal furnace thermal field guide tube structure produces crystals with a high oxygen content, and the main flow of the guide tube bottom structure is a large angle. During the crystal pulling process, a large space is formed between the guide tube and the silicon liquid surface, and the argon blowing ability to carry away SiO is weakened. At the same time, SiO is mainly carried away from the exhaust pipe at the bottom. The efficiency of carrying away SiO during the crystal pulling process is low, resulting in a high oxygen content in the crystal. Utility Model Content
[0003] The utility model aims to provide an outer guide tube for a single crystal furnace with double-layer oxygen reduction, wherein an outer cavity is arranged on the outer periphery of the outer guide tube to form a gas flow channel with the outer guide tube, and the gas flow channel is connected with an air guide pipe assembly, so that the flow rate of argon gas above the silicon liquid surface is increased, and the efficiency of taking away SiO above the liquid surface is improved, so that the argon gas is discharged to the outside of the single crystal furnace through the first air guide pipe and the second air guide pipe, thereby reducing the oxygen content in the single crystal silicon rod, and solving the above-mentioned problems existing in the prior art.
[0004] In order to solve the above technical problems, the utility model adopts the following solutions:
[0005] A single crystal furnace outer guide tube with double-layer oxygen reduction comprises an outer guide tube, an outer cavity is arranged on the outer periphery of the tube body of the outer guide tube, the bottom of the outer cavity is fixedly connected to the bottom of the outer guide tube, the outer guide tube and the outer cavity form a gas flow channel, the outer cavity has an inclined surface, the inclined surface is provided with a plurality of first exhaust holes, the top of the outer guide tube extends horizontally outward to form a boss, and an air guide pipe assembly connected to the gas flow channel is assembled on the boss.
[0006] Preferably, the top of the outer cavity is fixedly connected to the bottom surface of the boss, and second exhaust holes are symmetrically provided in the diameter direction of the boss and are connected to the main pump through the air guide pipe assembly.
[0007] Preferably, the air guide tube assembly comprises a first air guide tube and a second air guide tube, the second exhaust hole is equipped with an L-shaped first air guide tube, and the second air guide tube is arranged between the outlet ends of the two first air guide tubes.
[0008] Preferably, the second air guide pipe avoids the diameter direction of the outer guide tube.
[0009] Preferably, the second air duct is provided with an air duct port connected to the main pump.
[0010] Preferably, the first exhaust holes are evenly arranged around the center of the outer cavity.
[0011] Preferably, the aperture of the first exhaust hole is smaller than the aperture of the second exhaust hole.
[0012] Preferably, the outer cavity is made of quartz, and the first air guide tube and the second air guide tube are made of stainless steel.
[0013] The utility model has the beneficial effects:
[0014] The utility model mainly adds an upper exhaust channel on the basis of the existing lower exhaust channel, and forms a gas channel by arranging an outer cavity on the outer periphery of the cylinder body of the outer guide cylinder. The silicon liquid surface is taken away through the first exhaust hole, the gas flow channel, the first gas guide pipe and the second gas guide pipe, so that the oxygen content of the single crystal silicon rod is significantly reduced, thereby improving the product quality. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] Figure 1 It is a schematic diagram of the structure of the utility model;
[0016] Figure 2 It is the front view of the utility model;
[0017] Figure 3 It is a schematic diagram of the top view structure of the utility model;
[0018] Figure 4 This is a schematic diagram of the structure of the utility model when viewed from above;
[0019] Figure 5 It is a schematic diagram of the use and assembly of the utility model.
[0020] Figure numerals: 1-external guide cylinder, 10-cylinder body, 11-boss, 12-second exhaust hole, 2-external cavity, 20-inclined surface, 21-first exhaust hole, 3-first air guide pipe, 4-second air guide pipe, 40-air guide port, 5-gas flow channel, 6-main pump. DETAILED DESCRIPTION
[0021] The present invention will be further described in detail below in conjunction with the embodiments and drawings, but the implementation manner of the present invention is not limited thereto.
[0022] In the description of the present utility model, it should be noted that the terms "center", "up", "down", "left", "right", "vertical", "longitudinal", "lateral", "horizontal", "inside", "outside", "front", "back", "top", "bottom", etc. indicate directions or positional relationships based on the directions or positional relationships shown in the accompanying drawings, or are the directions or positional relationships in which the utility model product is usually placed when in use. They are only for the convenience of describing the present utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as a limitation on the present utility model.
[0023] In the description of the present invention, it is also necessary to explain that, unless otherwise clearly specified and limited, the terms "set", "open", "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0024] Example
[0025] An embodiment of the utility model is an outer flow guide tube 1 for a single crystal furnace with double-layer oxygen reduction, comprising an outer flow guide tube 1, an outer cavity 2 is arranged on the outer periphery of a tube body 10 of the outer flow guide tube 1, the bottom of the outer cavity 2 is fixedly connected to the bottom of the outer flow guide tube 1, the outer flow guide tube 1 and the outer cavity 2 form a gas flow channel 5, the outer cavity 2 has an inclined surface 20, the inclined surface 20 is provided with a plurality of first exhaust holes 21, the top of the outer flow guide tube 1 extends horizontally outward to form a boss 11, and an air guide pipe assembly connected to the gas flow channel 5 is assembled on the boss 11.
[0026] Reference Figures 1 to 4 The present application mainly adds an upper exhaust channel on the basis of the existing lower exhaust channel, specifically, an outer cavity 2 is provided on the outer peripheral surface of the cylinder body 10 of the outer guide cylinder 1, and the space formed between the outer cavity 2 and the cylinder body 10 constitutes a gas flow channel 5, and an inclined surface 20 is provided at the bottom of the outer cavity 2 to connect with the bottom of the cylinder body 10, and the gas guide pipe assembly arranged on the boss 11 connects the gas flow channel 5 to form a SiO2 removal path above the silicon liquid surface, and at the same time, combined with the SiO2 removal path below the silicon liquid surface, the SiO2 removal rate is increased, thereby reducing the oxygen content in the single crystal silicon rod.
[0027] Specifically, the first exhaust hole 21 provided on the bottom slope 20 of the outer cavity 2 increases the flow rate of argon gas above the silicon liquid surface, so that the ability of argon gas to blow SiO is enhanced, so that SiO is taken away through the first exhaust hole 21, the gas flow channel 5 and the air guide tube assembly, thereby reducing the oxygen content in the silicon crystal.
[0028] It should be noted that the distance between the outer cavity 2 and the barrel 10 is set according to actual conditions to meet the need to take away SiO.
[0029] In some preferred embodiments, the top of the outer cavity 2 is fixedly connected to the bottom of the boss 11, and the boss 11 is symmetrically provided with second exhaust holes 12 in the diameter direction thereof, which are connected to the main pump 6 through an air pipe assembly. The air pipe assembly includes a first air pipe 3 and a second air pipe 4, wherein an L-shaped first air pipe 3 is installed in the second exhaust port, and a second air pipe 4 is arranged between the outlet ends of the two first air pipes 3.
[0030] Specifically, the bottom end of the first air duct 3 in the air duct assembly is assembled in the second exhaust hole 12, and the outlet ends of the two first air ducts 3 are connected to the second air duct 4, and the second air duct 4 is further connected to the main pump 6, and the main pump 6 provides power for the first air duct 3 and the second air duct 4 to carry away SiO.
[0031] In some preferred embodiments, in order not to affect the normal crystal pulling operation, the second air guide pipe 4 avoids the diameter direction of the outer guide tube 1. The second air guide pipe 4 is provided with an air guide port 40 connected to the main pump 6.
[0032] Specifically, refer to Figure 2 The first air guide tube 3 is L-shaped, and the mounting end assembled with the second exhaust hole 12 is located in the diameter direction of the boss 11, and the outlet end of the first air guide tube 3 is bent away from the diameter direction of the boss 11. At the same time, the second air guide tube 4 is arranged. At this time, the second air guide tube 4 is located above the outer peripheral surface of the boss 11 and avoids the diameter direction of the boss 11, so as to avoid interference with the single crystal silicon ingot during seeding, so as to achieve both seeding and taking away SiO, improve work efficiency, and reduce the oxygen content in the single crystal silicon ingot. A pipeline is provided between the air guide port 40 and the main pump 6.
[0033] In some preferred embodiments, the first exhaust holes 21 are evenly arranged around the center of the outer cavity 2. The number and specific arrangement of the first exhaust holes 21 on the inclined surface 20 are set according to actual conditions, so as to quickly increase the argon gas flow rate above the silicon liquid surface, increase the argon gas carrying SiO from the first exhaust holes 21, the gas flow channel 5 and the gas guide tube assembly, and finally reduce the oxygen content in the silicon single crystal.
[0034] In some preferred embodiments, the aperture of the first exhaust hole 21 is smaller than that of the second exhaust hole 12, which is beneficial for transporting SiO through the first exhaust hole 21 and the gas flow channel 5.
[0035] In some preferred embodiments, the outer cavity 2 is made of quartz, and the first air guide tube 3 and the second air guide tube 4 are made of stainless steel. The outer cavity 2 made of quartz is made of the same material as the outer guide tube 1. The high-purity quartz material is not easy to react with silicon raw materials and graphite parts, and has a low impurity content, which can greatly improve the product quality of the single crystal silicon rod. At the same time, the stainless steel material has the advantages of low cost and long service life.
[0036] The working principle of the utility model is: when in use, refer to Figure 5 During crystal pulling, the main pump 6 is kept in an open state, and the argon gas flow rate above the silicon liquid surface increases, thereby increasing the blowing intensity of SiO, blowing SiO into the first exhaust hole 21 and entering the gas flow channel 5, and is taken away and removed through the second exhaust hole 12, the first air guide pipe 3, the second air guide pipe 4, and the air guide port 5. Combined with the exhaust path below the single crystal furnace, the efficiency of taking away SiO is improved, the oxygen content of the single crystal silicon rod is reduced, and the final single crystal silicon quality is improved.
[0037] The above is only a preferred embodiment of the utility model and does not limit the utility model in any form. According to the technical essence of the utility model, within the spirit and principles of the utility model, any simple modification, equivalent replacement and improvement made to the above embodiment still falls within the protection scope of the technical solution of the utility model.
Claims
1. A single crystal furnace outer guide tube with double-layer oxygen reduction, characterized in that: The invention comprises an outer guide tube (1), wherein an outer cavity (2) is arranged on the outer periphery of a tube body (10) of the outer guide tube (1), the bottom of the outer cavity (2) is fixedly connected to the bottom of the outer guide tube (1), the outer guide tube (1) and the outer cavity (2) form a gas flow channel (5), the outer cavity (2) has an inclined surface (20), the inclined surface (20) is provided with a plurality of first exhaust holes (21), the top of the outer guide tube (1) extends outward horizontally to form a boss (11), and an air guide tube assembly connected to the gas flow channel (5) is assembled on the boss (11).
2. The single crystal furnace outer guide tube with double-layer oxygen reduction according to claim 1, characterized in that: The top of the outer cavity (2) is fixedly connected to the bottom surface of the boss (11), and a second exhaust hole (12) is symmetrically provided in the diameter direction of the boss (11) and is connected to the main pump (6) through an air guide pipe assembly.
3. The single crystal furnace outer guide tube with double-layer oxygen reduction according to claim 2, characterized in that: The air guide tube assembly comprises a first air guide tube (3) and a second air guide tube (4); the second exhaust hole (12) is equipped with an L-shaped first air guide tube (3); and the second air guide tube (4) is arranged between the outlet ends of the two first air guide tubes (3).
4. The single crystal furnace outer guide tube with double-layer oxygen reduction according to claim 3 is characterized in that: The second air guide pipe (4) avoids the diameter direction of the outer air guide cylinder (1).
5. The single crystal furnace outer guide tube with double-layer oxygen reduction according to claim 3, characterized in that: The second air guide pipe (4) is provided with an air guide port (40) which is in communication with the main pump (6).
6. The single crystal furnace outer guide tube with double-layer oxygen reduction according to claim 3, characterized in that: The first exhaust holes (21) are evenly arranged around the center of the outer cavity (2).
7. The single crystal furnace outer guide tube with double-layer oxygen reduction according to claim 3, characterized in that: The aperture of the first exhaust hole (21) is smaller than the aperture of the second exhaust hole (12).
8. The single crystal furnace outer guide tube with double-layer oxygen reduction according to claim 3, characterized in that: The outer cavity (2) is made of quartz material, and the first air guide tube (3) and the second air guide tube (4) are made of stainless steel material.