Field effect transistor air pressure sensor
By growing a zinc oxide layer on the surface of the gate electrode layer of the field effect transistor air pressure sensor and setting a sawtooth structure, the problem of insufficient sensitivity of the air pressure sensor in the prior art is solved, and higher sensitivity and stability are achieved.
Patent Information
- Application Number
- CN202421801201.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-29
- Publication Date
- 2025-04-25
- Estimated Expiration
- 2034-07-29
AI Technical Summary
The existing semiconductor air pressure sensors based on field effect transistors have insufficient sensitivity and are difficult to meet the needs of technological development.
A zinc oxide layer is grown on the surface of the gate electrode layer through EBL, and a sawtooth structure is provided on the gate electrode layer to increase the contact area of the zinc oxide layer.
Improves the sensitivity of the air pressure sensor, making it more stable in high-frequency and high-power application environments.
Smart Images
Figure CN222800230U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of semiconductor technology, and in particular to a field effect transistor air pressure sensor. Background Art
[0002] The air pressure sensor is an instrument used to measure the absolute pressure of gas. It transmits the detected information in the form of electrical signals according to a certain rule. The main sensing element is a film that is sensitive to the strength of the air pressure sensor and a pin opening control. At the same time, a flexible resistor is also connected to the circuit. When the pressure of the measured gas changes, the change of the film also drives the change of the pin, causing the resistance value of the resistor to change. After the resistance value changes, it is converted and received by the data acquisition device and transmitted to the computer in an appropriate form. Semiconductor air pressure sensor is an important type of air pressure sensor, which has the advantages of simple structure, low preparation cost and easy interface circuit integration. This type of sensor mainly uses the physical properties of semiconductor materials to convert pressure signals into electrical signals. The semiconductor air pressure sensor has a field effect transistor structure. Under the action of external pressure, the carrier mobility of the transistor changes, which in turn causes the electrical properties of the transistor such as the output current to change, thereby realizing the measurement of environmental pressure. However, the sensitivity of the existing semiconductor air pressure sensor based on field effect transistor needs to be further improved to meet the needs of technological development. Utility Model Content
[0003] Based on this, in order to improve the sensitivity of a semiconductor pressure sensor based on a field effect transistor, an embodiment of the present application provides a field effect transistor pressure sensor, including a substrate layer, a carbon nanotube layer is arranged on one side of the substrate layer, a source electrode, a gate electrode and a drain electrode are arranged on the side of the carbon nanotube layer facing away from the substrate layer, a zinc oxide layer is arranged on the side of the gate electrode facing away from the carbon nanotube layer, and the zinc oxide layer is arranged as a sensor probe for detecting an object to be measured.
[0004] Preferably, a sawtooth structure is provided on a side of the gate electrode facing away from the carbon nanotube layer.
[0005] Preferably, the contact surface between the gate electrode and the zinc oxide layer is a sawtooth surface.
[0006] Preferably, the zinc oxide layer is grown on the surface of the gate electrode by EBL.
[0007] Preferably, the source electrode, the gate electrode and the drain electrode are made of any one of gold, platinum and palladium.
[0008] Preferably, the material of the substrate layer is any one of silicon dioxide, hafnium dioxide, polytetrafluoroethylene, and polyimide.
[0009] Compared with the prior art, the advantages of this application are:
[0010] In the present application, a zinc oxide layer is grown on the surface of the gate electrode layer through EBL, which can improve the sensitivity of the pressure sensor and can better adapt to high-frequency and high-power application environments. By setting a sawtooth structure on the surface of the gate electrode layer, the contact area between the gate electrode layer and the zinc oxide layer can be increased, so that the sensor has a larger contact surface area, further increasing the sensitivity of the product. BRIEF DESCRIPTION OF THE DRAWINGS
[0011] The present application is further described below in conjunction with the accompanying drawings and embodiments:
[0012] Figure 1 This is a schematic diagram of the overall structure of a field effect transistor air pressure sensor for this application;
[0013] Figure 2 A schematic diagram of another embodiment of a field effect transistor air pressure sensor of the present application;
[0014] in:
[0015] 1. Substrate layer, 2. Carbon nanotube layer, 3. Gate electrode, 4. Source electrode, 5. Drain electrode, 6. Zinc oxide layer, 31. Sawtooth structure. DETAILED DESCRIPTION
[0016] In order to make the purpose, technical scheme and advantages of the present application clearer, the embodiments of the present application will be further described in detail below in conjunction with the accompanying drawings. Obviously, the described embodiment is only one embodiment of the present application, not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application.
[0017] "Embodiment" referred to herein refers to a specific feature, structure or characteristic that may be included in at least one implementation of the present application. In the description of the embodiment of the present application, it should be understood that the terms "first", "second" and "third" etc. are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, the features defined as "first", "second" and "third" etc. may include one or more of the features explicitly or implicitly. Moreover, the terms "first", "second" and "third" etc. are used to distinguish similar objects, and do not have to be used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable where appropriate, so that the embodiment of the present application described here can be implemented in an order other than illustrated or described here. In addition, the terms "including" and "for" and any of their variations are intended to cover non-exclusive inclusions.
[0018] like Figure 1 As shown, this embodiment provides a field effect transistor pressure sensor, including a substrate layer 1, the substrate layer 1 is made of SiO2, HfO2, PTFE, PI and other materials, a carbon nanotube layer 2 is arranged on the substrate layer 1, a gate electrode 3 is arranged on the side of the carbon nanotube layer 2 away from the substrate layer 1, a source electrode 4 and a drain electrode 5 are arranged on both sides of the gate electrode 3, respectively, the gate electrode 3, the source electrode 4 and the drain electrode 5 are made of gold, platinum, palladium and other materials, a zinc oxide layer 6 is arranged on the side of the gate electrode 3 away from the carbon nanotube layer 2, the zinc oxide layer 6 is produced on the gate electrode 3 by electron beam lithography (EBL), the zinc oxide layer 6 is set as a sensor probe, which is used to detect the object to be detected, and the zinc oxide layer 6 contacts the object to be detected, and the property information of the object to be detected is converted into an electrical disturbance signal, so as to obtain the property of the object to be detected, and realize the detection process.
[0019] Combination Figure 2 As shown, the side of the gate electrode 3 facing away from the carbon nanotube layer 2 is set as a sawtooth structure 31, and a zinc oxide layer 6 is grown on the gate electrode 3 of the sawtooth structure 31 by EBL, so that the gate electrode 3 can have a larger surface area, which can effectively increase the contact area with the zinc oxide layer 6. The zinc oxide layer 6 can be prepared by physical vapor deposition, chemical vapor deposition and electron beam plating. In this embodiment, in order to improve the preparation efficiency, the zinc oxide layer 6 is prepared by electron beam plating.
[0020] In the present application, a zinc oxide layer 6 is grown on the gate electrode of the FET device through EBL to realize the function of air pressure sensing. Moreover, since the zinc oxide layer 6 has good sensitivity and the sawtooth structure is used to further increase the contact surface area of the zinc oxide layer 6, the air pressure sensor can also have good stability in high-frequency and high-power application scenarios.
[0021] The above embodiments are only for illustrating the technical concept and features of the present application, and their purpose is to enable people familiar with this technology to understand the content of the present application and implement it accordingly, and they cannot be used to limit the scope of protection of the present application. For those skilled in the art, it is obvious that the present application is not limited to the details of the above exemplary embodiments, and the present application can be implemented in other specific forms without departing from the spirit or basic features of the present application. Therefore, no matter from which point of view, the embodiments should be regarded as exemplary and non-restrictive. The scope of the present application is limited by the attached claims rather than the above description, and it is intended to include all changes within the meaning and scope of the equivalent elements of the claims in the present application.
Claims
1. A field effect transistor air pressure sensor, characterized in that: It comprises a substrate layer, a carbon nanotube layer is arranged on one side of the substrate layer, a source electrode, a gate electrode and a drain electrode are arranged on the side of the carbon nanotube layer away from the substrate layer, a zinc oxide layer is arranged on the side of the gate electrode away from the carbon nanotube layer, and the zinc oxide layer is arranged as a sensor probe for detecting an object to be measured.
2. A field effect transistor air pressure sensor according to claim 1, characterized in that: A sawtooth structure is provided on a side of the gate electrode away from the carbon nanotube layer.
3. A field effect transistor air pressure sensor according to claim 2, characterized in that: The contact surface between the gate electrode and the zinc oxide layer is a sawtooth surface.
4. A field effect transistor air pressure sensor according to claim 2, characterized in that: The zinc oxide layer is grown on the surface of the gate electrode by EBL.
5. A field effect transistor air pressure sensor according to any one of claims 1 to 4, characterized in that: The source electrode, the gate electrode and the drain electrode are made of any one of gold, platinum and palladium.
6. A field effect transistor air pressure sensor according to any one of claims 1 to 4, characterized in that: The material of the substrate layer is any one of silicon dioxide, hafnium dioxide, polytetrafluoroethylene, and polyimide.