Semiconductor laser inspection device
By designing a semiconductor laser inspection device, using control units, optical module units and photodiode units, effective screening and constant power control of semiconductor lasers are achieved, and laser problems that are difficult to screen out stability and consistency in the prior art are solved, and reliable screening of lasers and application requirements are achieved.
Patent Information
- Application Number
- CN202421809100.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-30
- Publication Date
- 2025-04-25
- Estimated Expiration
- 2034-07-30
AI Technical Summary
It is difficult for the prior art to effectively screen out semiconductor lasers that can be controlled in a constant power range within the product demand power range, especially optical pump type and high-energy electron beam type semiconductor lasers. Conventional inspection methods cannot ensure the stability and consistency of the laser.
A semiconductor laser inspection device is designed, including a control unit, an optical module unit and a photodiode unit. The controller collects temperature data, optical power feedback signal and temperature data of the TEC semiconductor chip to realize temperature control and constant power control, and a qualified laser is screened through swept current test and full-range closed-loop constant power test.
Effective screening of semiconductor lasers is achieved, ensuring that the laser has a stable optical power output within the product demand power range and meets the application requirements of reliable screening.
Smart Images
Figure CN222800323U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the field of instrument inspection, in particular to a semiconductor laser inspection device. Background Art
[0002] Semiconductor lasers are also called laser diodes. There are three main ways to excite them, namely, electric injection, optical pumping, and high-energy electron beam excitation. Electric injection semiconductor lasers are excited by injecting current along the forward bias; optical pumping semiconductor lasers are excited by the lasers emitted by other lasers; and high-energy electron beam excitation semiconductor lasers are excited by injecting high-energy electron beams from the outside. Electric injection semiconductor lasers have better performance and are more widely used.
[0003] When the forward current flows through the pn junction of the laser diode of the electrically injected semiconductor laser, the heat loss causes the junction area to rise in temperature. Near room temperature, the luminous intensity of the semiconductor laser will decrease by about 1% for every 1°C increase in temperature. Under the condition of constant temperature, the light output of the semiconductor laser will increase with the increase of current. The optically pumped semiconductor laser will be affected by the excitation light source and the pump crystal. The pump crystal is greatly affected by temperature, and the relationship between the optical power output of the laser and the current is very complicated.
[0004] Because the light output of an electrically injected diode laser increases with the increase of current when the temperature is constant, the conventional test is to provide a fixed current to the laser and then measure the corresponding light power output. Fig.15 , at a certain temperature, the values of a few points are measured to evaluate the maximum optical power of the laser, its linearity with the excitation current, the stability of the laser optical power, etc.
[0005] For optically pumped and high-energy electron beam semiconductor lasers, which are greatly affected by temperature, the factors affecting optical power are more complicated. Fig.16 Under constant temperature and constant current conditions, the optical power fluctuates greatly, and the characteristics of the laser cannot be determined by the values of the laser's excitation current and optical power.
[0006] Conventional inspection methods cannot screen out qualified lasers for existing semiconductor lasers with different performances, especially optically pumped and high-energy electron beam semiconductor lasers. For example, a 532nm optically pumped semiconductor laser uses an 808nm semiconductor laser as a pump source to pump Nd YVO4 crystals to generate 1064nm light, which is then passed through a frequency doubling crystal (KDP / LBO) to generate 532nm green light. The pump crystal and frequency doubling crystal are greatly affected by temperature, which affects their light-to-light conversion efficiency, causing the optical power of the 532nm laser to be very unstable. Therefore, constant temperature control and constant power control are required to ensure the stability of the power. However, due to the quality of the crystal, some lasers have sudden changes in power or low conversion power, which are not only not suitable for constant power control, but also have extremely poor consistency. If constant power control is performed, it needs to be screened repeatedly.
[0007] Moreover, in the product, the laser is first assembled with the structural parts and optical devices, then the optical path is initially debugged, and finally the laser structural parts and optical devices are cured together. Although such curing can prevent the optical path from deviating, if the subsequent test fails, the cured parts can only be scrapped, which easily leads to increased personnel and material costs and uncontrolled time costs.
[0008] There is currently no corresponding solution on the market. Summary of the invention
[0009] In view of the above technical problems in the related art, the utility model proposes a semiconductor laser inspection device that can screen out products within the power range required by the product and can perform constant power control before installation, which can overcome the above shortcomings of the prior art.
[0010] In order to achieve the above technical purpose, the technical solution of the utility model is implemented as follows:
[0011] The utility model provides a semiconductor laser inspection device, which comprises a control unit, an optical module unit and a photodiode unit;
[0012] The control unit includes a controller and a power supply, and the controller is communicatively connected to a PC terminal with a software terminal;
[0013] The optical module unit comprises a structural outer frame, a TEC semiconductor chip for temperature control is arranged at the bottom of the structural outer frame and a temperature sensor is arranged at the top, a laser to be tested and a filter are arranged inside the structural outer frame, and the filter is located directly in front of the laser to be tested;
[0014] The photodiode unit comprises a tube holder, on which a photodiode is arranged; the centers of the sensing surfaces of the laser to be tested, the filter, and the photodiode are all located in the optical axis of the same test optical path;
[0015] The controller is also connected to the temperature sensor, the TEC semiconductor chip, the laser to be tested, and the photodiode for communication. During implementation, the controller collects the temperature data signal of the temperature sensor, the optical power feedback signal of the laser to be tested, and the optical power feedback signal of the photodiode unit, collects the temperature data of the TEC semiconductor chip and controls the TEC semiconductor chip to perform temperature control; the controller transmits the collected sampling data to the PC end, and the PC end displays the sampling data in a graphical mode.
[0016] Preferably, the temperature sensor is connected to a laser temperature sampling circuit, the TEC semiconductor chip is connected to a TEC temperature control circuit, the laser to be tested is connected to a laser current closed-loop control circuit, and the photodiode is connected to a laser optical power sampling circuit. The above circuits are all implemented using existing technologies.
[0017] Preferably, the laser to be tested is fixed in the laser to be tested by a compression spring.
[0018] In one embodiment, the structural outer frame and the tube seat are adjusted by a fine-tuning device capable of adjusting the position and angle, so as to ensure that the centers of the sensing surfaces of the laser to be tested, the filter, and the photodiode are all located in the optical axis of the same test optical path. During implementation, the laser to be tested is lit, and the angle of the laser to be tested is adjusted and calibrated to ensure that the light spot generated by the laser to be tested is clearly captured in the middle of the sensing surface of the photodiode, that is, it is ensured to be located in the optical axis of the same test optical path.
[0019] Preferably, the structural outer frame is cylindrical, the filter is arranged on the inner wall of the structural outer frame, and the laser to be tested is located at the rear part inside the structural outer frame.
[0020] Preferably, the structural outer frame is provided with an opening for inserting or withdrawing the laser to be tested.
[0021] Preferably, the optical module unit and the photodiode unit are fixedly arranged on an optical plate.
[0022] Preferably, the reflection surface of the photodiode forms an angle of 45° with the optical axis, thereby preventing the reflected light from repeatedly entering the test optical path.
[0023] Preferably, the communication connection is realized by wireless communication or wire communication. For example, the PC terminal is connected to the control unit through RS485 bus; the controller can also be connected to the temperature sensor, TEC semiconductor chip, laser to be tested, and photodiode through wires.
[0024] Preferably, the photodiode is calibrated by calibrating the laser to ensure that the voltage and optical power of the photodiode are in a corresponding relationship, thereby more accurately testing the optical power of the laser to be tested.
[0025] The method for using the semiconductor laser inspection device of the utility model comprises the following steps: S1 start: start the power supply so that the power supply supplies power to the controller, thereby starting the test;
[0026] S2: Selecting a number of lasers to be tested;
[0027] S3: placing all the lasers to be tested in the structural outer frame in turn, and performing a sweep current test and a full-range closed-loop constant power test on each laser to be tested, and finally screening out the lasers to be tested whose current and optical power change smoothly, have similar trends, and whose optical power at maximum current is greater than the use requirement through the sweep current test, and screening out the lasers with stable optical power through the full-range closed-loop constant power test;
[0028] S4: Summarize all result data, turn off the power supply, and end the test.
[0029] Preferably, the specific process in S3 is:
[0030] S3.1: All the lasers to be tested are numbered in sequence, such as (24012601, 24012602, 24012603...24012625);
[0031] S3.2: placing the laser to be tested corresponding to the number in the structural outer frame in sequence;
[0032] S3.3: Record the laser to be tested currently placed in the structural outer frame as the laser with the current number;
[0033] S3.4: Perform a current sweep test on the laser with the current number, increase or decrease a fixed current at a fixed interval each time, so that the current increases from the initial current to the maximum current and then decreases to the initial current, and the optical power of the laser with the current number is recorded while the current changes; if the presented current and the optical power of the laser with the current number change smoothly, and the trends are similar, and the optical power at the maximum current is greater than the use requirements, it means that the laser with the current number meets the requirements and the relevant data is recorded; otherwise, it is not recorded and jumps directly to S3.6.
[0034] S3.5: For the laser with the current number recorded in S3.4, a full-range closed-loop constant power test is performed, in which the power is increased from the initial power to the required maximum power at fixed power intervals, and each power point works for a fixed time; if the optical power of the laser with the current number is stable, the relevant data is recorded; otherwise, no data is recorded and the test is directly skipped to S3.6;
[0035] S3.6: End the test of the laser with the current number; if the laser with the current number is the last one, it means that the test of all the lasers to be tested has been completed, and jump to S3.7; otherwise, it means that the traversal has not yet ended, and return to S3.2;
[0036] S3.7: End the testing of all the lasers to be tested.
[0037] Beneficial effects of the utility model: Compared with the prior art, the semiconductor laser inspection device provided by this product has a simple structure and is easy to operate. It can easily perform sweep current test and full-range closed-loop constant power test on the laser to be tested. Through the combination of software and hardware of the utility model, lasers with stable optical power within the use range can be screened out, meeting the application requirements of reliable screening.
[0038] The photodiode unit of this product includes a tube holder, on which a photodiode is arranged; through the tube holder and other conditional devices, it is ensured that the centers of the sensing surfaces of the laser to be tested, the filter, and the photodiode are all located in the optical axis of the same test optical path. In particular, the reflection surface of the photodiode forms a 45° angle with the optical axis of the test optical path, thereby avoiding the reflected light from repeatedly entering the test optical path, thereby making the test results more accurate. BRIEF DESCRIPTION OF THE DRAWINGS
[0039] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.
[0040] FIG. 1 is a diagram showing the structure of the semiconductor laser inspection device described in the present application.
[0041] Figure 2 It is a communication connection diagram of the controller, temperature sensor, TEC semiconductor chip, laser to be tested, and photodiode described in this application.
[0042] Figure 3 is a qualified sweep current image in S3.4.
[0043] Figure 4is a qualified closed-loop constant power image in S3.5.
[0044] Figure 5 It is the unqualified scanning current image 1 in S3.4 (the scanning current power oscillates frequently).
[0045] Figure 6 This is the unqualified scanning current image 2 in S3.4 (the scanning current power changes vertically).
[0046] Figure 7 This is the unqualified sweep current image three in S3.4 (the sweep current power varies vertically).
[0047] Figure 8 It is the unqualified sweep current image 4 in S3.4 (the sweep current power varies vertically).
[0048] Fig. 9 It is the unqualified sweep current image 5 in S3.4 (power vertical variation).
[0049] Fig.10 It is the unqualified scan current image six (low power) in S3.4.
[0050] Fig.11 It is the unqualified scan current image seven in S3.4 (vertical variation of optical power).
[0051] Fig.12 It is the unqualified scan current image eight in S3.4 (low optical power).
[0052] Fig.13 It is the unqualified scan current image nine in S3.4 (vertical variation of optical power).
[0053] Fig.14 It is a qualified image in S3.4 (optical power oscillation is non-vertical).
[0054] Fig.15 It is a test schematic diagram of an existing electrically injected diode laser.
[0055] Fig.16 This is a schematic diagram of optical power fluctuation under the existing constant temperature and constant current conditions.
[0056] In the figure: 100-control unit, 101-controller, 102-power supply, 200-optical module unit, 201-temperature sensor, 202-TEC semiconductor chip, 203-laser to be tested, 204-filter, 205-structure frame, 300-photodiode unit, 301-photodiode, 302-tube holder; 400, optical flat plate; 500, PC terminal. DETAILED DESCRIPTION
[0057] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field belong to the scope of protection of the utility model.
[0058] like Figure 1-14 As shown, in order to facilitate understanding of the above technical solution of the present invention, the above technical solution of the present invention is described in detail below through specific usage methods.
[0059] The utility model provides a semiconductor laser inspection device, which includes a control unit 100, an optical module unit 200 and a photodiode unit 300;
[0060] The control unit 100 includes a controller 101 and a power supply 102, and the controller 101 is communicatively connected to a PC terminal 500 with a software terminal;
[0061] The optical module unit 200 includes a structural outer frame 205, a TEC semiconductor chip 202 for temperature control is provided at the bottom of the structural outer frame 205 and a temperature sensor 201 is provided at the top, a laser to be tested 203 and a filter 204 are provided inside the structural outer frame 205, and the filter 204 is located directly in front of the laser to be tested 203;
[0062] The photodiode unit 300 includes a tube base 302, on which a photodiode 301 is disposed; the centers of the sensing surfaces of the laser 203 to be tested, the filter 204, and the photodiode 301 are all located in the optical axis of the same test optical path;
[0063] The controller 101 is also connected to the temperature sensor 201, the TEC semiconductor chip 202, the laser to be tested 203, and the photodiode 301. During implementation, the controller 101 collects the temperature data signal of the temperature sensor 201, the optical power feedback signal of the laser to be tested 203, and the optical power feedback signal of the photodiode unit 300, collects the temperature data of the TEC semiconductor chip 202 and controls the TEC semiconductor chip 202 to perform temperature control; the controller 101 transmits the collected sampling data to the PC terminal 500, and the PC terminal 500 displays the sampling data in a graphical mode.
[0064] In one embodiment, the temperature sensor 201 is connected to a laser temperature sampling circuit, the TEC semiconductor chip 202 is connected to a TEC temperature control circuit, the laser to be tested 203 is connected to a laser current closed-loop control circuit, and the photodiode 301 is connected to a laser optical power sampling circuit. The above circuits are all implemented using existing technologies.
[0065] In one embodiment, the laser to be tested 203 is fixed in the laser to be tested 203 by a compression spring.
[0066] In one embodiment, the structural outer frame 205 and the tube seat 302 are adjusted by a fine-tuning device capable of adjusting the position and angle, so as to ensure that the centers of the sensing surfaces of the laser 203 to be tested, the filter 204, and the photodiode 301 are all located in the optical axis of the same test optical path. During implementation, the laser 203 to be tested is lit, and the angle of the laser 203 to be tested is adjusted and calibrated to ensure that the light spot generated by the laser 203 to be tested is clearly captured in the middle position of the sensing surface of the photodiode 301, that is, it is ensured to be located in the optical axis of the same test optical path.
[0067] In one embodiment, the structural outer frame 205 is cylindrical, the filter 204 is disposed on the inner wall of the structural outer frame 205 , and the laser to be measured 203 is located at the rear part of the inner part of the structural outer frame 205 .
[0068] In one embodiment, the structural outer frame 205 is provided with an opening for inserting or withdrawing the laser 203 to be tested.
[0069] In one embodiment, the optical module unit 200 and the photodiode unit 300 are fixedly disposed on the optical plate 400 .
[0070] In one embodiment, the reflection surface of the photodiode 301 forms an angle of 45° with the optical axis, thereby preventing the reflected light from repeatedly entering the test optical path.
[0071] In one embodiment, the communication connection is realized by wireless communication or wire communication. For example, the PC terminal 500 is connected to the control unit 100 through RS485 bus; the controller 101 can also be connected to the temperature sensor 201, TEC semiconductor chip 202, laser to be tested 203, and photodiode 301 through wires.
[0072] In one embodiment, the photodiode 301 is calibrated by calibrating the laser to ensure that the voltage and optical power of the photodiode 301 are in a corresponding relationship, so as to more accurately test the optical power of the laser 203 to be tested.
[0073] The method for using the semiconductor laser inspection device of the utility model comprises the following steps: S1: Start the power supply 102 to enable the power supply 102 to supply power to the controller 101, thereby starting the test;
[0074] S2: Selecting a number of the lasers 203 to be tested;
[0075] S3: placing all the lasers 203 to be tested in the structural outer frame 205 in sequence, and performing a sweep current test and a full-range closed-loop constant power test on each laser 203 to be tested, and finally screening out the lasers 203 to be tested whose current and optical power change smoothly, have similar trends, and whose optical power at maximum current is greater than the use requirement through the sweep current test, and screening out the lasers with stable optical power through the full-range closed-loop constant power test;
[0076] S4: Summarize all result data, turn off the power supply 102, and end the test.
[0077] In one embodiment, the specific process in S3 is:
[0078] S3.1: All the lasers to be tested 203 are numbered in sequence, such as (24012601, 24012602, 24012603...24012625);
[0079] S3.2: placing the laser to be tested 203 corresponding to the number in the structural outer frame 205 in sequence;
[0080] S3.3: The laser to be tested 203 currently placed in the structural outer frame is recorded as the current numbered laser;
[0081] S3.4: Perform a current sweep test on the laser with the current number, increase or decrease a fixed current at a fixed interval each time, so that the current increases from the initial current to the maximum current and then decreases to the initial current, and the optical power of the laser with the current number is recorded while the current changes; if the presented current and the optical power of the laser with the current number change smoothly, and the trends are similar, and the optical power at the maximum current is greater than the use requirements, it means that the laser with the current number meets the requirements and the relevant data is recorded; otherwise, it is not recorded and jumps directly to S3.6.
[0082] S3.5: For the laser with the current number recorded in S3.4, a full-range closed-loop constant power test is performed, in which the power is increased from the initial power to the required maximum power at fixed power intervals, and each power point works for a fixed time; if the optical power of the laser with the current number is stable, the relevant data is recorded; otherwise, no data is recorded and the test is directly skipped to S3.6;
[0083] S3.6: End the test of the currently numbered laser; if the currently numbered laser is the last one, it means that the test of all the lasers 203 to be tested has been completed, and jump to S3.7; otherwise, it means that the traversal has not yet ended, and return to S3.2;
[0084] S3.7: End the test work on all the lasers 203 to be tested.
[0085] The working principle of the embodiment is as follows: Figure 1 As shown in FIG. 4 , all components are fixed on the optical plate 400 by processing parts, the laser 203 to be tested is placed in the structural outer frame 205, and the laser 205 to be tested is pressed by a compression spring. The laser 203 to be tested is not an inherent component of the semiconductor laser inspection device, but a laser that needs to be tested, and the laser 203 to be tested is replaceable.
[0086] like Figure 1 After the PC is connected, the software of the PC terminal 500 is opened after the power is turned on. The laser 203 to be tested placed in the structure outer frame 205 is turned on, and the structure outer frame 205 and the tube holder 302 are adjusted so that the light spot of the laser 203 to be tested is just clearly captured in the middle position of the sensing surface of the photodiode 301, and then the laser 203 to be tested is turned off.
[0087] Figure 3 and Figure 4 is a sample image of a qualified laser to be tested, where Figure 3 and Figure 4 The tests S3.4 and S3.5 are respectively performed for the same laser 203 to be tested.
[0088] like Figure 3 Shown - S3.4 sweep current test. Initial current 130mA, maximum current 400mA, current increases by 1mA per second. Green waveform - structural frame temperature, unit 0.1℃, black waveform - working current of the laser to be tested, unit mA, red waveform - optical power of the laser to be tested, unit 0.1mW. In the figure, the temperature is stable, the current and power of the laser 203 to be tested change in the same trend, and at the maximum current, the optical power is greater than 50 mW. Only when the sweep current of the laser 203 to be tested is judged to be qualified can the closed-loop optical power test of S3.5 be continued.
[0089] like Figure 4 Figure 1 shows the closed-loop optical power test. The initial power is 6mW, the maximum power is 45 mW, and each power point works for one minute. The green waveform is the temperature of the structure frame 205, the unit is 0.01℃, the blue waveform is the laser working current, the unit is 0.01mA, and the red waveform is the laser optical power, the unit is 0.001mW. In the figure, when the temperature is stable, the optical power of the laser 203 to be tested is stable, and it is judged that the closed-loop power of the laser 203 to be tested is qualified and the test has passed.
[0090] Figures 5, 6, 7, and 8 are the corresponding diagrams of the swept current images and the laser closed-loop power images of the four lasers to be tested, wherein the corresponding position relationship between the power closed-loop failure and the swept current image is shown by the arrow.
[0091] In FIG5 , the power of a laser 203 to be tested oscillates frequently in a current sweep image and frequently in a power closed-loop image.
[0092] In Figures 6, 7, and 8, in the current scanning images of the other three lasers 203 to be tested, the power rises vertically, and the corresponding power points in the power closed-loop images oscillate.
[0093] In the figure 9, the power at position 1 changes vertically, and the laser 203 to be tested is judged to be unqualified, and no power closed-loop test is required. The power change trend at positions 2 and 3 does not match the current change trend, and power instability may exist in the power closed-loop control.
[0094] As shown in Figure 10, the maximum optical power is less than 50 mW, and the laser 203 to be tested is judged to be unqualified, and there is no need to perform a power closed-loop test.
[0095] Figure 11 indicates vertical power changes at positions 1, 2, and 3. It is determined that the laser 203 to be tested is unqualified and no power closed-loop test is required.
[0096] In Figure 12, the maximum optical power is less than 50 mW, and the laser 203 to be tested is judged to be unqualified, and no power closed-loop test is required. In Figure 13, the power at positions 1 and 2 changes vertically. The laser 203 to be tested is judged to be unqualified, and no power closed-loop test is required.
[0097] As shown in Figure 14, there are multiple positions where the optical power and current change trends do not match, but the optical power does not have a vertical mutation, so the current sweep is determined to be qualified and the power closed-loop test can be entered. The power closed-loop test is qualified.
[0098] Table 1 and Table 2 below list the waveform data of 25 lasers 203 to be tested, numbered 24012601 to 24012625, during the implementation process, with an overall qualified rate of 44%. Among them, if the sweep current is qualified, the power closed-loop test qualified rate is 100%; if the optical power has a vertical mutation, the power closed-loop qualified rate is 0%; if the sweep current optical power oscillates, the power closed-loop qualified rate is 53.33%; if the optical power is lower than the set value, there is no need to perform a power closed-loop test, and it is directly judged as unqualified. Based on the above data, it can be concluded that if the optical power has a vertical mutation in the sweep current, the power closed-loop test must be unqualified, and the test result can be directly obtained in the sweep current stage; if the optical power oscillates in the sweep current and does not have a vertical mutation, an optical power closed-loop test must be performed to obtain the test result.
[0099]
[0100]
[0101] In summary, through the unique design of the utility model, compared with the prior art, the semiconductor laser inspection device provided by this product has a simple structure and is easy to operate, and can easily perform sweep current test and full-range closed-loop constant power test on the laser to be tested. Through the combination of software and hardware of the utility model, lasers with stable optical power within the use range can be screened out, meeting the application requirements of reliable screening.
[0102] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.
Claims
1. A semiconductor laser inspection device, characterized in that: It comprises a control unit (100), an optical module unit (200) and a photodiode unit (300); The control unit (100) comprises a controller (101) and a power supply (102), and the controller (101) is communicatively connected to a PC terminal (500) having a software terminal; The optical module unit (200) comprises a structural outer frame (205), a TEC semiconductor chip (202) for controlling the temperature of the structural outer frame (205) is provided at the bottom thereof and a temperature sensor (201) is provided at the top thereof, a laser to be tested (203) and a filter (204) are provided inside the structural outer frame (205), and the filter (204) is located directly in front of the laser to be tested (203); The photodiode unit (300) comprises a tube base (302), on which a photodiode (301) is disposed; the centers of the sensing surfaces of the laser to be tested (203), the filter (204), and the photodiode (301) are all located in the optical axis of the same test optical path; The controller (101) is also communicatively connected with the temperature sensor (201), the TEC semiconductor chip (202), the laser to be tested (203), and the photodiode (301).
2. The semiconductor laser inspection device according to claim 1, characterized in that: The laser to be tested (203) is fixed in the laser to be tested (203) via a compression spring.
3. The semiconductor laser inspection device according to claim 1, characterized in that: The structural outer frame (205) and the tube seat (302) are adjusted by a fine-tuning device capable of adjusting position and angle, thereby ensuring that the centers of the sensing surfaces of the laser (203), the filter (204) and the photodiode (301) to be tested are all located in the optical axis of the same test optical path.
4. The semiconductor laser inspection device according to claim 1, characterized in that: The structural outer frame (205) is cylindrical, the filter (204) is arranged on the inner wall of the structural outer frame (205), and the laser to be measured (203) is located at the rear part inside the structural outer frame (205).
5. The semiconductor laser inspection device according to claim 4, characterized in that: The structural outer frame (205) is provided with an opening for inserting or withdrawing the laser (203) to be tested.
6. The semiconductor laser inspection device according to claim 1, characterized in that: The optical module unit (200) and the photodiode unit (300) are fixedly arranged on the optical flat plate (400).
7. The semiconductor laser inspection device according to claim 1, characterized in that: The reflection surface of the photodiode (301) forms an angle of 45° with the optical axis, thereby preventing reflected light from repeatedly entering the test optical path.
8. The semiconductor laser inspection device according to claim 1, characterized in that: The communication connection is achieved by wireless communication or wire communication.