Large-size high-uniformity plasma etching machine
By introducing a rotating plate and a rotating device into a plasma etching machine, the automatic rotation of the silicon wafer is achieved, solving the problem of cumbersome process of etching the surrounding edges of the silicon wafer in the prior art, and improving process efficiency and uniformity.
Patent Information
- Application Number
- CN202421829590.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-31
- Publication Date
- 2025-05-06
- Estimated Expiration
- 2034-07-31
AI Technical Summary
During the process of etching the surrounding edges of the existing plasma etching machines, they need to manually adjust the direction of the silicon wafer many times, resulting in cumbersome processes.
A large-size and high uniformity plasma etching machine is designed, using a rotating plate and a rotating device to enable the silicon wafer to rotate automatically, ensuring that each side can correspond to the exit direction of the plasma source.
The operation of manually adjusting the position of the silicon wafer is reduced, and the efficiency and uniformity of the etching of the surrounding edges of the silicon wafer is improved.
Smart Images
Figure CN222838789U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of etching equipment, in particular to a large-size and high-uniformity plasma etcher. Background Art
[0002] Silicon wafers are the carriers of solar cells. The quality of silicon wafers directly determines the conversion efficiency of solar cells. Solar cells require a large area of PN junction to achieve the conversion of light energy to electrical energy, and the diffusion furnace is a special equipment for manufacturing PN junctions of solar cells. During the diffusion process, even if back-to-back diffusion is used, all surfaces of the silicon wafer, including the edges, will inevitably be diffused with phosphorus. The photogenerated electrons collected on the front of the PN junction will flow along the edge of the phosphorus diffusion area to the back of the PN junction, causing a short circuit. Therefore, the doped silicon around the solar cell must be etched to remove the PN junction at the edge of the battery. This process is usually completed by a plasma etcher. Plasma etching is a process in which the parent molecules of the reaction gas CF4 are ionized and form plasma under the excitation of radio frequency power under low pressure. Plasma is composed of charged electrons and ions. Under the impact of electrons, the gas in the reaction chamber can not only be converted into ions, but also absorb energy and form a large number of active groups. The silicon wafer is placed inside the etching chamber, and the plasma reaches the SiO2 surface under the action of the electric field, where the surface of the etched material is etched.
[0003] When etching the edges of a silicon wafer, several silicon wafers are usually stacked on a placement plate, and then a pressing plate is used to press the silicon wafers onto the placement plate. The placement plate, several silicon wafers and the pressing plate are then placed together in the etching chamber of a plasma etcher to etch the edges of the silicon wafer.
[0004] In the related art, the etching direction of the plasma of the plasma etcher is usually fixed. That is to say, after etching one side edge of the silicon wafer, it is necessary to manually adjust the direction of the silicon wafer multiple times to facilitate etching the sides of the silicon wafer in different directions, which makes the process of etching the edges of the silicon wafer more cumbersome. Utility Model Content
[0005] The utility model aims to provide a large-size and high-uniformity plasma etcher to improve the problem that the process of etching the edges around silicon wafers is relatively complicated.
[0006] The utility model is realized by the following technical solutions:
[0007] A large-size high-uniformity plasma etcher comprises an etching chamber, a plasma source is arranged on one side of the interior of the etching chamber, a base is arranged on the bottom wall of the etching chamber, a rotating plate is rotatably arranged on the base, a placing plate is arranged on the rotating plate, the placing plate is used to place a silicon wafer, a pressing plate is also arranged on the placing plate, a pressing device is also arranged in the etching chamber, when a silicon wafer is placed on the placing plate, the pressing device is used to press the pressing plate onto the silicon wafer; a rotating device is arranged on the base, the rotating device is used to drive the rotating plate to rotate, the plasma source is located on one side of the silicon wafer, and in the process of the rotating plate driving the silicon wafer to rotate, each side of the silicon wafer can correspond to the emission direction of the plasma source.
[0008] Furthermore, the rotating device includes a rotating motor and a rotating shaft. The base is hollow inside, the rotating motor is located inside the base, one end of the rotating shaft vertically passes through the upper surface of the base and is rotatably connected to the base, the lower end of the rotating shaft is coaxially connected to the output shaft of the rotating motor, and the upper end is connected to the rotating plate.
[0009] Furthermore, the clamping device includes a telescopic rod and multiple guide rods, the multiple guide rods are vertically arranged on the placement plate, the pressure plate is provided with multiple guide holes, the ends of the multiple guide rods away from the placement plate all pass through the corresponding guide holes and then slide with the pressure plate, one end of the telescopic rod is connected to the inner top wall of the etching cavity, and the other end is abutted against the upper surface of the pressure plate, and the telescopic rod is vertically arranged.
[0010] Furthermore, a plurality of positioning grooves are provided on the upper surface of the rotating plate, and a plurality of positioning posts are provided on the lower surface of the placing plate, and the plurality of positioning posts are all located in corresponding positioning grooves.
[0011] Furthermore, the opening end of the positioning groove is expanded, and the inner wall of the expanded hole of the positioning groove is inclined.
[0012] Furthermore, the plasma source includes a gas source and multiple gas pipes, the gas source is located on one side of the etching chamber, the multiple gas pipes are connected to the gas source, the gas outlet ends of the multiple gas pipes pass through the side wall of the etching chamber and are located inside the etching chamber, the gas outlet ends of the multiple gas pipes face the sides of multiple silicon wafers, and the multiple gas pipes are arranged in a matrix.
[0013] Compared with the prior art, the utility model has the following advantages and beneficial effects:
[0014] In the utility model, when it is necessary to etch the side of the silicon wafer, multiple silicon wafers are stacked on a placement plate, and then the placement plate and the silicon wafer are placed on a base inside the etching chamber, and then a pressing plate is placed above the multiple silicon wafers, and the pressing plate is pressed on the silicon wafer by a pressing device, and then plasma can be emitted to one side of the silicon wafer by a plasma source to achieve etching of the side of the silicon wafer. After the corresponding sides of the multiple silicon wafers are etched, the rotating plate is driven to rotate by a rotating device, and then the multiple silicon wafers are rotated with the rotating plate, so that the other side of the silicon wafer faces the plasma source, so that the plasma source can etch different sides of the silicon wafer, reducing the operation of manually adjusting the position of the silicon wafer. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] The drawings described herein are used to provide a further understanding of the embodiments of the present utility model, constitute a part of this application, and do not constitute a limitation of the embodiments of the present utility model.
[0016] In the attached picture:
[0017] Figure 1 It is a partial cross-sectional view of the utility model;
[0018] Figure 2 For the utility model Figure 1 Enlarged view of part A in the middle.
[0019] Marks and corresponding parts names in the attached drawings:
[0020] 1. Etching chamber; 2. Plasma source; 3. Base; 4. Rotating plate; 5. Placing plate; 6. Silicon wafer; 7. Pressing plate; 8. Rotating motor; 9. Rotating shaft; 10. Telescopic rod; 11. Guide rod; 12. Guide hole; 13. Positioning groove; 14. Positioning column; 15. Gas source; 16. Gas pipe. DETAILED DESCRIPTION
[0021] In order to make the purpose, technical solution and advantages of the utility model more clear, the utility model is further described in detail below in combination with the embodiments and drawings. The schematic implementation mode and description of the utility model are only used to explain the utility model and are not intended to limit the utility model. It should be noted that the utility model is already in the actual development and use stage.
[0022] Example 1
[0023] A large-scale, high-uniformity plasma etcher, referring to Figure 1 , Figure 2, including an etching chamber 1, a plasma source 2 is arranged on one side of the etching chamber 1, a base 3 is arranged on the bottom wall of the etching chamber 1, a rotating plate 4 is rotatably arranged on the base 3, a placing plate 5 is arranged on the rotating plate 4, the placing plate 5 is used to place a silicon wafer 6, a pressing plate 7 is also arranged on the placing plate 5, and a pressing device is also arranged in the etching chamber 1, when a silicon wafer 6 is placed on the placing plate 5, the pressing device is used to press the pressing plate 7 on the silicon wafer 6; a rotating device is arranged on the base 3, the rotating device is used to drive the rotating plate 4 to rotate, the plasma source 2 is located on one side of the silicon wafer 6, and in the process of the rotating plate 4 driving the silicon wafer 6 to rotate, each side of the silicon wafer 6 can correspond to the emission direction of the plasma source 2. The plasma etcher also includes a pre-vacuum chamber, a gas supply system and a vacuum system, and the above structures are common knowledge well known to those skilled in the art, so they are not described in detail in this embodiment.
[0024] In the present solution, when it is necessary to etch the side of the silicon wafer 6, multiple silicon wafers 6 are stacked on the placement plate 5, and then the placement plate 5 and the silicon wafer 6 are placed on the base 3 inside the etching chamber 1, and then the pressing plate 7 is placed above the multiple silicon wafers 6, and the pressing plate 7 is pressed on the silicon wafer 6 by a clamping device, and then plasma can be emitted to one side of the silicon wafer 6 by the plasma source 2 to achieve etching of the side of the silicon wafer 6. After the corresponding sides of the multiple silicon wafers 6 are etched, the rotating plate 4 is driven to rotate by the rotating device, and then the multiple silicon wafers 6 are rotated with the rotating plate 4, so that the other side of the silicon wafer 6 faces the plasma source 2, so that the plasma source 2 can etch different sides of the silicon wafer 6, reducing the operation of manually adjusting the position of the silicon wafer 6.
[0025] Specifically, the rotating device includes a rotating motor 8 and a rotating shaft 9. The base 3 is hollow inside, and the rotating motor 8 is located inside the base 3. One end of the rotating shaft 9 vertically passes through the upper surface of the base 3 and is rotatably connected to the top wall of the base 3 through a bearing. The lower end of the rotating shaft 9 is coaxially connected to the output shaft of the rotating motor 8, and the upper end is connected to the rotating plate 4. The rotation of the rotating motor 8 can drive the rotating shaft 9 to rotate, and the rotation of the rotating shaft 9 drives the rotating plate 4 above to rotate, thereby causing the placement plate 5, the pressing plate 7 and several silicon wafers 6 to rotate at the same time, which is convenient for quickly adjusting the orientation of the silicon wafer 6, and then convenient for etching the edges around the silicon wafer 6.
[0026] The clamping device includes a telescopic rod 10 and multiple guide rods 11. The multiple guide rods 11 are vertically arranged on the placement plate 5. A plurality of guide holes 12 are opened on the pressing plate 7. The ends of the multiple guide rods 11 away from the placement plate 5 all pass through the corresponding guide holes 12 and then slide with the pressing plate 7. One end of the telescopic rod 10 is connected to the inner top wall of the etching chamber 1, and the other end abuts against the upper surface of the pressing plate 7, and the telescopic rod 10 is vertically arranged. The telescopic rod 10 can be a cylinder, an electric cylinder or a hydraulic cylinder. After the placement plate 5, the silicon wafer 6 and the pressing plate 7 are placed in place, the telescopic rod 10 is extended, and the lower end of the telescopic rod 10 pushes the pressing plate 7, so that the pressing plate 7 and the placement plate 5 clamp a number of silicon wafers 6. In addition, since the pressing plate 7 vertically descends along a plurality of vertical guide rods 11 during the process of pushing and squeezing the pressing plate 7, the pressing plate 7 can uniformly squeeze different parts of the silicon wafer 6, so that a plurality of silicon wafers 6 can be closely attached to each other, and the situation that gaps between the silicon wafers 6 due to uneven squeezing of the silicon wafers 6 can be prevented. The gaps between the silicon wafers 6 can easily cause the two sides of the silicon wafer 6 to be over-etched. In this solution, additional structures are installed in the etching chamber 1, such as a base 3, a rotating device and a clamping device, so that the plasma etcher of this solution is larger in size than a conventional plasma etcher.
[0027] Example 2
[0028] Based on Example 1, in this example, reference Figure 1 , Figure 2 , a plurality of positioning grooves 13 are provided on the upper surface of the rotating plate 4, and a plurality of positioning posts 14 are provided on the lower surface of the placement plate 5, and the plurality of positioning posts 14 are all located in the corresponding positioning grooves 13. The rotating motor 8 can be a stepping motor or a servo motor, and the angular position of the rotating plate 4 can be regulated by the rotating motor 8, and the angular position of the silicon wafer 6 on the placement plate 5 can be adjusted by a ruler or other tools, but when the placement plate 5 is placed on the rotating plate 4 inside the etching chamber 1, it is troublesome to adjust the angular position of the placement plate 5. The positioning grooves 13 and the positioning posts 14 facilitate the more accurate positioning of the placement plate 5, so that the plasma source 2 can etch the side of the silicon wafer 6 directly.
[0029] Example 3
[0030] Based on Example 2, in this example, refer to Figure 1 , Figure 2 The opening end of the positioning groove 13 is expanded, and the inner wall of the expanded hole of the positioning groove 13 is inclined, that is, the positioning groove 13 is funnel-shaped, which is convenient for placing the placement plate 5 on the designated position of the rotating plate 4 more quickly.
[0031] Example 4
[0032] Based on Example 3, in this example, refer to Figure 1 , Figure 2 The plasma source 2 includes a gas source 15 and a plurality of gas pipes 16. The gas source 15 is located at one side of the etching chamber 1. The plurality of gas pipes 16 are all connected to the gas source 15. The gas outlets of the plurality of gas pipes 16 pass through the side wall of the etching chamber 1 and are located inside the etching chamber 1. The gas outlets of the plurality of gas pipes 16 face the sides of the plurality of silicon wafers 6, and the plurality of gas pipes 16 are arranged in a matrix. The plurality of gas pipes 16 can make the plasma be more evenly delivered to the sides of the silicon wafers 6, so as to facilitate the etching of the sides of the plurality of silicon wafers 6 with high uniformity, and make the etching quality of the sides of the plurality of silicon wafers 6 more uniform.
[0033] The specific implementation methods described above further illustrate the purpose, technical solutions and beneficial effects of the utility model in detail. It should be understood that the above description is only the specific implementation method of the utility model and is not used to limit the protection scope of the utility model. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the utility model should be included in the protection scope of the utility model.
Claims
1. A large-size, high-uniformity plasma etcher, comprising an etching chamber (1), wherein a plasma source (2) is arranged on one side of the etching chamber (1), and characterized in that: The bottom wall of the etching chamber (1) is provided with a base (3), a rotating plate (4) is rotatably provided on the base (3), a placement plate (5) is provided on the rotating plate (4), the placement plate (5) is used to place a silicon wafer (6), a pressing plate (7) is also provided on the placement plate (5), and a pressing device is also provided in the etching chamber (1), when a silicon wafer (6) is placed on the placement plate (5), the pressing device is used to press the pressing plate (7) onto the silicon wafer (6); a rotating device is provided on the base (3), the rotating device is used to drive the rotating plate (4) to rotate, the plasma source (2) is located on one side of the silicon wafer (6), and in the process of the rotating plate (4) driving the silicon wafer (6) to rotate, each side edge of the silicon wafer (6) can correspond to the emission direction of the plasma source (2).
2. A large-size, high-uniformity plasma etcher according to claim 1, characterized in that: The rotating device comprises a rotating motor (8) and a rotating shaft (9); the interior of the base (3) is hollow, the rotating motor (8) is located inside the base (3), one end of the rotating shaft (9) vertically passes through the upper surface of the base (3) and is rotatably connected to the base (3); the lower end of the rotating shaft (9) is coaxially connected to the output shaft of the rotating motor (8), and the upper end is connected to the rotating plate (4).
3. A large-size, high-uniformity plasma etcher according to claim 2, characterized in that: The clamping device comprises a telescopic rod (10) and a plurality of guide rods (11), wherein the plurality of guide rods (11) are vertically arranged on the placement plate (5), and a plurality of guide holes (12) are opened on the pressure plate (7), and the ends of the plurality of guide rods (11) away from the placement plate (5) all pass through the corresponding guide holes (12) and then slide in cooperation with the pressure plate (7), one end of the telescopic rod (10) is connected to the inner top wall of the etching chamber (1), and the other end abuts against the upper surface of the pressure plate (7), and the telescopic rod (10) is vertically arranged.
4. A large-size, high-uniformity plasma etcher according to claim 3, characterized in that: The upper surface of the rotating plate (4) is provided with a plurality of positioning grooves (13), and the lower surface of the placing plate (5) is provided with a plurality of positioning posts (14), and the plurality of positioning posts (14) are all located in corresponding positioning grooves (13).
5. A large-size, high-uniformity plasma etcher according to claim 4, characterized in that: The opening end of the positioning groove (13) is arranged to be expanded, and the inner wall of the expanded hole of the positioning groove (13) is arranged to be inclined.
6. A large-size, high-uniformity plasma etcher according to claim 5, characterized in that: The plasma source (2) comprises a gas source (15) and a plurality of gas pipes (16); the gas source (15) is located at one side of the etching chamber (1); the plurality of gas pipes (16) are all connected to the gas source (15); the gas outlet ends of the plurality of gas pipes (16) pass through the side wall of the etching chamber (1) and are located inside the etching chamber (1); the gas outlet ends of the plurality of gas pipes (16) face the sides of the plurality of silicon wafers (6); and the plurality of gas pipes (16) are arranged in a matrix.