Silicon controlled rectifier for semiconductor integrated circuit

Abstract

The utility model relates to the field of semiconductors, and discloses a silicon controlled rectifier for a semiconductor integrated circuit, which comprises a silicon controlled rectifier body, a plurality of anode contact layers arranged up and down at the center of the front end face of the silicon controlled rectifier body, and a plurality of micro grooves arranged up and down at the center of the rear end face of the silicon controlled rectifier body. The center of the lower end face of the silicon controlled rectifier body is provided with an electrostatic protection layer. According to the utility model, through the combination of the metal gate layer, the dielectric isolation layer, the doping layer and the energy band layer, accurate control of the working state of the silicon controlled rectifier body is realized, and through the high dielectric constant and the insulating property of the dielectric isolation layer, charge flow between the metal gate layer and the doping layer is effectively isolated; according to the silicon controlled rectifier, the stability and the reliability of the device are ensured, the doping layer changes the conductive characteristic of a semiconductor through doping of specific impurities, and the energy band layer further improves the performance of the silicon controlled rectifier body by regulating and controlling an electronic energy band structure.

Description

Technical Field

[0001] The utility model relates to the field of semiconductors, in particular to a thyristor used in semiconductor integrated circuits. Background Art

[0002] Thyristor is a four-layer, three-terminal semiconductor device with controllable unidirectional conductivity. It is widely used in the field of power electronics, such as AC voltage regulation, motor control, inverters, power switches, etc. The invention of thyristor has provided an important technical foundation for the development of semiconductor integrated circuits.

[0003] Since traditional thyristors for semiconductor integrated circuits have a slow switching speed, this limits their use in applications that require fast switching. They may lack the ability to accurately control the operating state and cannot effectively isolate the flow of charge, resulting in insufficient device stability and reliability, which increases the complexity of the control circuit. Therefore, those skilled in the art provide a thyristor for semiconductor integrated circuits to solve the problems raised in the above background technology. Utility Model Content

[0004] The utility model aims to solve the shortcomings existing in the prior art, and proposes a thyristor for semiconductor integrated circuits. Through a metal gate layer, a dielectric isolation layer, a doping layer and an energy band layer, the combination of these layers not only realizes the precise control of the working state of the thyristor body, but also effectively isolates the charge flow between the metal gate layer and the doping layer through the high dielectric constant and insulation performance of the dielectric isolation layer, thereby ensuring the stability and reliability of the device. The doping layer changes the conductive properties of the semiconductor by the incorporation of specific impurities, and the energy band layer further improves the performance of the thyristor body by regulating the electronic energy band structure. The thyristor body is composed of an insulating layer and a barrier layer, wherein the barrier layer is directly and tightly combined with the side wall of the thyristor body, effectively blocking the invasion of external impurities, water vapor and chemical substances, and protecting the internal structure of the thyristor body from damage. The insulating layer ensures the stable flow of current and prevents the occurrence of side wall leakage or short circuit. By designing the anode contact layer at the center of the front end surface of the thyristor body into a sawtooth shape, the contact area with the external circuit is significantly increased. This design helps to reduce the contact resistance, thereby enabling the current to be transmitted more evenly and efficiently, thereby improving the overall current carrying capacity.

[0005] To achieve the above-mentioned purpose, the utility model provides the following technical solutions: a thyristor for semiconductor integrated circuits, comprising a thyristor body, a plurality of anode contact layers are arranged vertically at the center of the front end surface of the thyristor body, a plurality of micro grooves are arranged vertically at the center of the rear end surface of the thyristor body, an electrostatic protection layer is arranged at the center of the lower end surface of the thyristor body, both side walls of the thyristor body are provided with protection structures, and a gate structure is arranged at the center of the upper end surface of the thyristor body;

[0006] Through the above technical scheme, the combination of the metal gate layer, the dielectric isolation layer, the doping layer and the energy band layer not only realizes the precise control of the working state of the thyristor body, but also effectively isolates the charge flow between the metal gate layer and the doping layer through the high dielectric constant and insulation performance of the dielectric isolation layer, thereby ensuring the stability and reliability of the device. The doping layer changes the conductive properties of the semiconductor by the incorporation of specific impurities, while the energy band layer further improves the performance of the thyristor body by regulating the electronic energy band structure. The insulating layer and the barrier layer are composed, wherein the barrier layer is directly and tightly combined with the side wall of the thyristor body, effectively blocking the invasion of external impurities, water vapor and chemical substances, and protecting the internal structure of the thyristor body from damage. The insulating layer ensures the stable flow of current and prevents the occurrence of side wall leakage or short circuit. By designing the anode contact layer at the center of the front end surface of the thyristor body into a serrated shape, the contact area with the external circuit is significantly increased. This design helps to reduce the contact resistance, thereby enabling the current to be transmitted more evenly and efficiently, thereby improving the overall current carrying capacity.

[0007] Further, the protection structure comprises an insulating layer and a barrier layer, wherein the barrier layer is arranged on the side wall of the thyristor body, and the insulating layer is arranged on the side wall of the barrier layer;

[0008] Through the above technical scheme, the barrier layer is directly and tightly combined with the side wall of the thyristor body, and its main function is to block external impurities, water vapor, chemical substances, etc. from invading the interior of the thyristor body, thereby preventing these external factors from adversely affecting the performance and stability of the thyristor body. The insulating layer covers the outside of the barrier layer, and plays a good insulating role, preventing the current from leaking or short-circuiting at the side wall of the thyristor body, ensuring that the current can only flow inside the thyristor body according to a predetermined path, thereby enhancing the anti-interference ability of the thyristor body, enabling it to maintain good performance under harsh working conditions, extending the service life of the thyristor body, and reducing maintenance costs and the incidence of circuit failures.

[0009] Furthermore, the gate structure includes a metal gate layer, a dielectric isolation layer, a doped layer and an energy band layer, wherein the metal gate layer is arranged at the center of the upper end surface of the thyristor body, the dielectric isolation layer is arranged at the center of the upper end surface of the metal gate layer, the doped layer is arranged at the center of the upper end surface of the dielectric isolation layer, and the energy band layer is arranged at the center of the upper end surface of the doped layer;

[0010] Through the above technical solution, the metal gate layer receives the control signal input from the outside and affects the working state of the thyristor body through the change of its electric potential. The dielectric isolation layer mainly isolates the metal gate layer and the doping layer above it electrically to prevent unnecessary charge exchange and interference between them. The doping layer changes the conductive properties of the semiconductor by adding specific impurities. When the control signal of the metal gate layer acts, the conductivity of the doping layer will change accordingly, thereby affecting the conduction and cutoff of the thyristor body. The energy band layer is located above the doping layer. It further accurately controls the flow and energy state of electrons by regulating the electronic energy band structure to achieve fine adjustment of the performance of the thyristor body, which helps to improve the working efficiency of the thyristor body, reduce power consumption, and enhance stability, thereby meeting the requirements of modern semiconductor integrated circuits for high-performance devices.

[0011] Furthermore, the dielectric isolation layer is made of silicon nitride;

[0012] Through the above technical solution, silicon nitride has a high dielectric constant and good insulation performance. In the gate structure, it can effectively prevent the flow of charges between the metal gate layer and the doped layer above, thereby achieving a good isolation effect electrically.

[0013] Furthermore, the doping layer is made of boron-doped P-type silicon;

[0014] Through the above technical solution, boron is doped into silicon as an acceptor impurity to form a large number of holes, which makes the silicon exhibit P-type conductive properties. Under the control of the gate, the movement and distribution of these holes will change, affecting the conduction and cutoff of the current.

[0015] Furthermore, the energy band layer is made of semiconductor material;

[0016] Through the above technical solution, the energy band structure of the semiconductor material determines the energy distribution and motion state of electrons therein. During the operation of the thyristor body, the energy band layer can control the injection and extraction of electrons by regulating the electron energy, thereby affecting the flow of current.

[0017] Furthermore, the plurality of anode contact layers are all in a sawtooth shape;

[0018] Through the above technical solution, the serrated structure increases the contact area between the anode contact layer and the external circuit. When current passes through, the larger contact area means lower contact resistance, and the current can be transmitted more evenly and efficiently.

[0019] The utility model has the following beneficial effects:

[0020] 1. In the utility model, the thyristor used in the semiconductor integrated circuit is composed of a metal gate layer, a dielectric isolation layer, a doped layer and an energy band layer. The combination of these layers not only realizes the precise control of the working state of the thyristor body, but also effectively isolates the charge flow between the metal gate layer and the doped layer through the high dielectric constant and insulation performance of the dielectric isolation layer, thereby ensuring the stability and reliability of the device. The doped layer changes the conductive properties of the semiconductor by the incorporation of specific impurities, while the energy band layer further improves the performance of the thyristor body by regulating the electronic band structure.

[0021] 2. In the utility model, the insulating layer and the barrier layer are composed, wherein the barrier layer is directly and tightly combined with the side wall of the thyristor body, effectively blocking the invasion of external impurities, water vapor and chemical substances, protecting the internal structure of the thyristor body from damage, and the insulating layer ensures the stable flow of current and prevents the occurrence of side wall leakage or short circuit.

[0022] 3. In the utility model, by designing the anode contact layer at the center of the front end surface of the thyristor body into a serrated shape, the contact area with the external circuit is significantly increased. This design helps to reduce the contact resistance, so that the current can be transmitted more evenly and efficiently, thereby improving the overall current carrying capacity. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 A three-dimensional diagram of a thyristor for a semiconductor integrated circuit proposed by the utility model;

[0024] Figure 2 A three-dimensional diagram of a thyristor for a semiconductor integrated circuit proposed by the utility model from another perspective;

[0025] Figure 3 A front cross-sectional view of a thyristor for a semiconductor integrated circuit proposed by the utility model;

[0026] Figure 4 The utility model is a side sectional view of a thyristor used in a semiconductor integrated circuit.

[0027] Legend:

[0028] 1. Thyristor body; 2. Anode contact layer; 3. Micro groove; 4. Electrostatic protection layer; 5. Protection structure; 501. Insulation layer; 502. Barrier layer; 6. Gate structure; 601. Metal gate layer; 602. Dielectric isolation layer; 603. Doping layer; 604. Energy band layer. DETAILED DESCRIPTION

[0029] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0030] Reference Figure 1-4 The utility model provides an embodiment: a thyristor for a semiconductor integrated circuit, comprising a thyristor body 1, a plurality of anode contact layers 2 are arranged vertically at the center of the front end face of the thyristor body 1, a plurality of micro grooves 3 are arranged vertically at the center of the rear end face of the thyristor body 1, an electrostatic protection layer 4 is arranged at the center of the lower end face of the thyristor body 1, a protection structure 5 is arranged on both side walls of the thyristor body 1, a gate structure 6 is arranged at the center of the upper end face of the thyristor body 1, the anode contact layer 2 is used to receive external current input, the plurality of anode contact layers 2 are arranged vertically to increase the contact points and contact surfaces of the current input, so that the current can enter the thyristor body 1 more evenly and stably, and the micro grooves 3 are arranged vertically at the center of the rear end face of the thyristor body 1, which may help to optimize the internal electric field distribution and improve the current input The efficiency and stability of the controllable silicon are improved. The electrostatic protection layer 4 is located at the center of the lower end surface of the thyristor body 1, which can effectively prevent static electricity from damaging the internal structure of the thyristor and protect the normal operation of the device. The protection structure 5 is arranged on the two side walls of the thyristor body 1 to prevent external impurities, water vapor, etc. from corroding and interfering with the side walls of the thyristor body 1, and ensure the normal transmission of internal electrons. The gate structure 6 is located at the center of the upper end surface of the thyristor body 1, and adjusts the on and off states of the thyristor by receiving external control signals, thereby realizing precise control of the current. The multiple anode contact layers 2 are all serrated, and the serrated structure increases the contact area between the anode contact layer 2 and the external circuit. When the current passes through, the larger contact area means a lower contact resistance, and the current can be transmitted more evenly and effectively.

[0031] The protection structure 5 includes an insulating layer 501 and a barrier layer 502. The barrier layer 502 is arranged on the side wall of the thyristor body 1. The insulating layer 501 is arranged on the side wall of the barrier layer 502. The barrier layer 502 is directly and tightly combined with the side wall of the thyristor body 1. Its main function is to prevent external impurities, water vapor, chemical substances, etc. from invading the inside of the thyristor body 1, and prevent these external factors from adversely affecting the performance and stability of the thyristor body 1. The insulating layer 501 covers the outside of the barrier layer 502, plays a good insulating role, prevents the current from leaking or short-circuiting on the side wall of the thyristor body 1, and ensures that the current can only flow inside the thyristor body 1 according to a predetermined path, thereby enhancing the anti-interference ability of the thyristor body 1, enabling it to maintain good performance under harsh working conditions, extending the service life of the thyristor body 1, and reducing maintenance costs and the incidence of circuit failures.

[0032] The gate structure 6 includes a metal gate layer 601, a dielectric isolation layer 602, a doped layer 603 and an energy band layer 604. The metal gate layer 601 is arranged at the center of the upper end surface of the thyristor body 1, the dielectric isolation layer 602 is arranged at the center of the upper end surface of the metal gate layer 601, the doped layer 603 is arranged at the center of the upper end surface of the dielectric isolation layer 602, and the energy band layer 604 is arranged at the center of the upper end surface of the doped layer 603. The metal gate layer 601 receives an external input control signal and affects the working state of the thyristor body 1 by changing its potential. The dielectric isolation layer 602 mainly functions to electrically isolate the metal gate layer 601 and the doped layer 603 above to prevent unnecessary charge exchange and interference between them. The doped layer 603 changes the conductive properties of the semiconductor by doping specific impurities.

[0033] When the control signal of the metal gate layer 601 acts, the conductivity of the doped layer 603 will change accordingly, thereby affecting the conduction and cutoff of the thyristor body 1. The energy band layer 604 is located on the doped layer 603. It further accurately controls the flow and energy state of electrons by regulating the electron energy band structure to achieve fine adjustment of the performance of the thyristor body 1, which helps to improve the working efficiency of the thyristor body 1, reduce power consumption, and enhance stability, thereby meeting the requirements of modern semiconductor integrated circuits for high-performance devices. The dielectric isolation layer 602 is made of silicon nitride, which has a high dielectric constant and good insulation properties. In the gate structure 6, it can effectively prevent Charge flows between the metal gate layer 601 and the doped layer 603 above, thereby achieving a good electrical isolation effect. The doped layer 603 is made of boron-doped P-type silicon. Boron is doped into silicon as an acceptor impurity to form a large number of holes, which makes the silicon exhibit P-type conductive properties. Under the control of the gate, the movement and distribution of these holes will change, affecting the conduction and cutoff of the current. The energy band layer 604 is made of semiconductor material. The energy band structure of the semiconductor material determines the energy distribution and movement state of the electrons therein. During the operation of the thyristor body 1, the energy band layer 604 can control the injection and extraction of electrons by regulating the electron energy, thereby affecting the flow of current.

[0034] Working principle: The anode contact layer 2 is used to receive external current input. Multiple anode contact layers 2 are arranged up and down to increase the contact points and contact surfaces of current input, so that the current can enter the thyristor body 1 more evenly and stably. The micro grooves 3 are arranged up and down at the center of the rear end face of the thyristor body 1, which may help to optimize the internal electric field distribution and improve the efficiency and stability of current output. The electrostatic protection layer 4 is located at the center of the lower end face of the thyristor body 1, which can effectively prevent static electricity from damaging the internal structure of the thyristor and protect the normal operation of the device. The barrier layer 502 is directly and tightly combined with the side wall of the thyristor body 1. Its main function is to The purpose is to block external impurities, water vapor, chemicals, etc. from invading the interior of the thyristor body 1, and prevent these external factors from having an adverse effect on the performance and stability of the thyristor body 1. The insulating layer 501 covers the outside of the blocking layer 502, which plays a good insulating role, prevents the current from leaking or short-circuiting at the side wall of the thyristor body 1, and ensures that the current can only flow inside the thyristor body 1 according to a predetermined path, thereby enhancing the anti-interference ability of the thyristor body 1, enabling it to maintain good performance under harsh working conditions, extending the service life of the thyristor body 1, and reducing maintenance costs and the incidence of circuit failures.

[0035] It receives external input control signals through the metal gate layer 601, and affects the working state of the thyristor body 1 through the change of its electric potential. The dielectric isolation layer 602 mainly functions to electrically isolate the metal gate layer 601 and the doping layer 603 above to prevent unnecessary charge exchange and interference between them. The doping layer 603 changes the conductive properties of the semiconductor by doping specific impurities. When the control signal of the metal gate layer 601 acts, the conductivity of the doping layer 603 will change accordingly, thereby affecting the conduction and cutoff of the thyristor body 1. The energy band layer 604 is located above the doping layer 603. It further accurately controls the flow and energy state of electrons by regulating the electronic energy band structure to achieve fine adjustment of the performance of the thyristor body 1, which helps to improve the working efficiency of the thyristor body 1, reduce power consumption, and enhance stability, thereby meeting the requirements of modern semiconductor integrated circuits for high-performance devices.

[0036] Finally, it should be noted that the above is only a preferred embodiment of the present invention and is not intended to limit the present invention. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art can still modify the technical solutions described in the aforementioned embodiments or make equivalent substitutions for some of the technical features therein. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A thyristor for a semiconductor integrated circuit, comprising a thyristor body (1), characterized in that: A plurality of anode contact layers (2) are arranged vertically at the center of the front end face of the thyristor body (1), a plurality of micro grooves (3) are arranged vertically at the center of the rear end face of the thyristor body (1), an electrostatic protection layer (4) is arranged at the center of the lower end face of the thyristor body (1), both side walls of the thyristor body (1) are provided with protection structures (5), and a gate structure (6) is arranged at the center of the upper end face of the thyristor body (1).

2. A thyristor for a semiconductor integrated circuit according to claim 1, characterized in that: The protection structure (5) comprises an insulating layer (501) and a blocking layer (502), wherein the blocking layer (502) is arranged on the side wall of the thyristor body (1), and the insulating layer (501) is arranged on the side wall of the blocking layer (502).

3. A thyristor for a semiconductor integrated circuit according to claim 1, characterized in that: The gate structure (6) comprises a metal gate layer (601), a dielectric isolation layer (602), a doping layer (603) and an energy band layer (604); the metal gate layer (601) is arranged at the center of the upper end surface of the thyristor body (1); the dielectric isolation layer (602) is arranged at the center of the upper end surface of the metal gate layer (601); the doping layer (603) is arranged at the center of the upper end surface of the dielectric isolation layer (602); and the energy band layer (604) is arranged at the center of the upper end surface of the doping layer (603).

4. A thyristor for a semiconductor integrated circuit according to claim 3, characterized in that: The dielectric isolation layer (602) is made of silicon nitride.

5. The thyristor for semiconductor integrated circuit according to claim 3, characterized in that: The doping layer (603) is made of boron-doped P-type silicon.

6. The thyristor for semiconductor integrated circuit according to claim 3, characterized in that: The energy band layer (604) is made of semiconductor material.

7. A thyristor for a semiconductor integrated circuit according to claim 1, characterized in that: The plurality of anode contact layers (2) are all in a sawtooth shape.

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