Semiconductor device

Abstract

The utility model provides a semiconductor device. The semiconductor device includes a semiconductor substrate; a first device region on the semiconductor substrate, where the first device region includes a first metal gate, and the first metal gate extends in a Y direction to a first end of the first metal gate; a second device region on the semiconductor substrate and separated from the first device region in an X direction, wherein the X direction is perpendicular to the Y direction; an insulating structure adjacent to the first device region and the second device region and located between the first device region and the second device region, wherein the insulating structure extends in the Y direction to a first end of the insulating structure; and a dielectric structure extending in the X direction, wherein the dielectric structure adjoins a first end of the first metal gate and a first end of the insulating structure.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor device, and more particularly to a semiconductor device having an isolation structure between device regions. Background Art

[0002] The electronics industry continues to have an increasing demand for smaller and faster electronic devices that can simultaneously support a greater number of more complex and high-tech functions. Therefore, a continuing trend in the semiconductor industry is to manufacture low-cost, high-performance, and low-power integrated circuits (ICs). To date, this goal has been largely achieved by reducing the size of semiconductor ICs (e.g., minimum feature size), thereby improving yields and reducing associated costs. However, the aforementioned reductions have also resulted in increased complexity in semiconductor processing. Therefore, understanding the continued advancement of semiconductor ICs and devices requires corresponding advances in semiconductor processing and technology.

[0003] To improve gate control, multi-gate devices are known that increase gate-channel coupling to reduce off-state current and reduce short-channel effects (SCEs). One such multi-gate device is known as the fin field-effect transistor (FinFET). FinFETs are named for the fin-like structures that extend from a substrate and are used to form the field effect transistor channel. Another multi-gate device that is used in part to describe the performance challenges associated with FinFETs is the gate-all-around (GAA) transistor. Gate-all-around devices are named because the gate structure extends to completely surround the channel, which provides better electrostatic control than FinFETs. FinFETs and gate-all-around devices are compatible with conventional complementary metal-oxide-semiconductor (CMOS) processes, and the aforementioned three-dimensional structures can continue to shrink while maintaining gate control and reducing short-channel effects. Utility Model Content

[0004] One aspect of the present disclosure provides a semiconductor device, which includes a semiconductor substrate; a first device region on the semiconductor substrate, wherein the first device region includes a first metal gate, and the first metal gate extends in the Y direction to a first end of the first metal gate; a second device region on the semiconductor substrate and separated from the first device region in the X direction, wherein the X direction is perpendicular to the Y direction; an insulating structure adjacent to the first device region and the second device region and located between the first device region and the second device region, wherein the insulating structure extends in the Y direction to a first end of the insulating structure; and a dielectric structure extending in the X direction, wherein the dielectric structure is adjacent to a first end of the first metal gate and a first end of the insulating structure.

[0005] Another aspect of the present disclosure is to provide a semiconductor device, which includes a semiconductor substrate; a first device region on the semiconductor substrate, wherein the first device region includes a first metal gate, and the first metal gate extends from the second end of the first metal gate to the first end of the first metal gate in the Y direction; a second device region on the semiconductor substrate and separated from the first device region in the X direction, wherein the X direction is perpendicular to the Y direction, the second device region includes a second metal gate, and the second metal gate extends from the second end of the second metal gate to the first end of the second metal gate in the Y direction; a third device region on the semiconductor substrate, wherein the third device region includes a third metal gate, and the third metal gate extends to the first end of the third metal gate in the Y direction; an insulating structure adjacent to the first device region and the second device region and located between the first device region and the second device region, wherein the third metal gate is colinear with the insulating structure, and the insulating structure extends from the second end of the insulating structure to the first end of the insulating structure in the Y direction; and a dielectric structure extending in the X direction, wherein the dielectric structure is adjacent to the first end of the first metal gate and the first end of the insulating structure.

[0006] Another aspect of the present disclosure is to provide a semiconductor device, which includes a semiconductor substrate; a first device region on the semiconductor substrate, wherein the first device region includes a first metal gate, and the first metal gate extends from the second end of the first metal gate to the first end of the first metal gate in the Y direction; a second device region on the semiconductor substrate and separated from the first device region in the X direction, wherein the X direction is perpendicular to the Y direction, the second device region includes a second metal gate, and the second metal gate extends from the second end of the second metal gate to the first end of the second metal gate in the Y direction; an insulating structure adjacent to the first device region and the second device region and located between the first device region and the second device region, wherein the insulating structure extends from the second end of the insulating structure to the first end of the insulating structure in the Y direction; and a first dielectric structure extending in the X direction, wherein the first dielectric structure is adjacent to the first end of the first metal gate, the first end of the second metal gate, and the first end of the insulating structure; and a second dielectric structure extending in the X direction, wherein the second dielectric structure is adjacent to the second end of the first metal gate, the second end of the insulating structure, and the second end of the second metal gate. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] The present disclosure is better understood by reading the following detailed description in conjunction with the accompanying drawings. It should be noted that, as is standard practice in the industry, many features are not drawn to scale. In fact, for the sake of clarity of discussion, the dimensions of many features may be arbitrarily scaled.

[0008] Figure 1 is a plan view illustrating a layout of a multi-gate device according to some embodiments;

[0009] Figure 2 is a flowchart illustrating a method according to some embodiments;

[0010] Figures 3 to 7 and Figures 9 and 10 is a cross-sectional view illustrating a multi-gate device at various stages of the process according to some embodiments;

[0011] Figure 8 is a diagram illustrating some embodiments of the present invention. Figure 7 A top view of the component at the process stage;

[0012] Fig.11 is a diagram illustrating some embodiments of the present invention. Fig.10 A top view of the component at the process stage;

[0013] Fig.12 and Fig.13 is a diagram illustrating some embodiments of the present invention. Fig.10 TEM image of a cross section of the multi-gate device along the Y-cut line.

[0014]

Explanation of symbols

[0015] 10: Base material

[0016] 11: Unit Cell

[0017] 12: Fins / remaining structure

[0018] 12': Fins

[0019] 13: Base material

[0020] 14: Shallow trench isolation feature

[0021] 15:Nanosheet channel layer

[0022] 16: Sacrificial layer

[0023] 17: Sacrificial layer / sacrificial gate structure / dummy gate structure

[0024] 17': Part

[0025] 18: Mask layer

[0026] 20: Active area

[0027] 30: Gate line

[0028] 40: Insulation structure / CPODE structure

[0029] 50: Ditch

[0030] 58: Outer layer

[0031] 59: Filling material

[0032] 60: Insulation structure

[0033] 61,62:End wall

[0034] 70: Holes

[0035] 71: Bottom of the hole

[0036] 78: First side wall

[0037] 79: Second side wall

[0038] 80:Metal gate / gate structure

[0039] 81: High K gate dielectric layer / liner / high K dielectric layer

[0040] 82: Filling material / metal layer

[0041] 85,86,87: Metal gate

[0042] 88,89: Gate structure / metal gate

[0043] 90: Source / drain region

[0044] 91: veil

[0045] 95: Opening

[0046] 99: Isolation Structure

[0047] 100: Installation

[0048] 101,102,103,104: Installation area

[0049] 180: Gate line

[0050] 181,182: Gate lines

[0051] 601: First end

[0052] 602: Second end

[0053] 811,812: terminal part

[0054] 819: Side part

[0055] 851,861,871,891: First end

[0056] 872,892: Second end

[0057] 200: Method

[0058] S202,S204,S206,S208,S210,S212,S214,S216: Blocks

[0059] 7-7,9-9: Line

[0060] a,b,c,d,e,f:width

[0061] g,h: depth

[0062] i:Height

[0063] j,k,l: size

[0064] m:Height

[0065] n,o: angle

[0066] X,Y: Direction DETAILED DESCRIPTION

[0067] The following disclosure provides many different embodiments or examples to implement different features of the novel invention. The specific examples of components and configurations described below are intended to simplify the disclosure. These are of course only examples and are not intended to be limiting. For example, the description of a first feature formed on or above a second feature includes embodiments in which the first feature and the second feature are in direct contact, and also includes embodiments in which other features are formed between the first feature and the second feature, so that the first feature and the second feature are not in direct contact. In addition, the disclosure repeats component symbols and / or letters in various specific examples. The purpose of this repetition is to simplify and clarify the description and does not indicate a relationship between the various discussed embodiments and / or configurations.

[0068] Furthermore, spatially relative terms, such as "over," "overlying," "above," "upper," "top," "under," "underlying," "below," "lower," "bottom," "side," etc., are used to facilitate description of the relationship of parts or features illustrated in the drawings to other parts or features. Spatially relative terms encompass different orientations of the elements in use or operation in addition to the orientation depicted in the drawings. The device may be otherwise oriented (rotated 90 degrees or at other orientations), and the spatially relative descriptors used in the disclosure may be interpreted so.

[0069] In certain embodiments of the present disclosure, a "material layer" is a layer comprising at least 50 wt.% of a specified material, such as at least 60 wt.% of a specified material, at least 75 wt.% of a specified material, at least 90 wt.% of a specified material, at least 95 wt.% of a specified material, at least 99 wt.% of a specified material, and a layer of "material" comprising at least 50 wt.% of a specified material, such as at least 60 wt.% of a specified material, at least 75 wt.% of a specified material, at least 90 wt.% of a specified material, at least 95 wt.% of a specified material, at least 99 wt.% of a specified material. For example, in certain embodiments, each titanium nitride layer and a layer of titanium nitride is a layer of, for example, at least 50 wt.%, at least 60 wt.%, at least 75 wt.%, at least 90 wt.%, at least 95 wt.%, or at least 99 wt.% titanium nitride.

[0070] For the purpose of brevity, conventional techniques related to the processes of conventional semiconductor devices are not described in detail herein. Furthermore, the various tasks and processes described in the present disclosure may be included in a broader process or a process with additional functions, which are not described in detail herein. In particular, the various processes of semiconductor devices are well known, so for the sake of brevity, many conventional processes are only briefly and or completely omitted in the present disclosure without providing details of the conventional processes. A person with ordinary knowledge in the art can understand after reading the present disclosure in detail that the structure disclosed herein can be used by various technologies and can be included in various semiconductor devices and products. Furthermore, it should be noted that the semiconductor device structure includes a large number of components, and a single component shown in the accompanying drawings can represent multiple components.

[0071] The present disclosure presents embodiments of semiconductor devices and methods for manufacturing the same. The methods described in the present disclosure can be easily integrated with existing processes.

[0072] The embodiments of the present disclosure provide advantages over conventional technologies. It should be understood that other embodiments may provide different advantages, but not all advantages need to be described here, and no particular advantages apply to all embodiments.

[0073] For the following explanation, Figure 1 A simplified top view layout diagram of a semiconductor device 100 (eg, a multi-gate device 100) is provided. The multi-gate device 100 includes a transistor having gate structures formed on at least two sides of a channel region. The multi-gate device may include a P-type MOS multi-gate device or an N-type MOS multi-gate device.

[0074] In various embodiments, the multi-gate device 100 may include a fin field-effect transistor device (FinFET), a gate-all-around (GAA) device, or other types of multi-gate devices. A gate-all-around device includes any device having a gate structure (or portion thereof) formed on four sides of a channel region (e.g., surrounding a portion of a channel region). The devices described in the present disclosure also include embodiments having a channel region disposed in a nanosheet channel, a nanowire channel, a rod-shaped channel, and / or other suitable channel configurations. In the present disclosure, a "nanosheet channel" includes a nanowire channel and a rod-shaped channel configuration. Embodiments of the device 100 presented in the present disclosure may have one or more channel regions (e.g., nanosheets) connected to a single and adjacent gate structure. However, a person having ordinary knowledge in the art should understand that this teaching can be applied to a single channel (e.g., a single nanosheet) or any number of channels. A person having ordinary knowledge in the art can understand that other examples of semiconductor devices can benefit from the aspects of the present disclosure.

[0075] The multi-gate device 100 is formed on a substrate 10. In some embodiments, the substrate 10 may be a semiconductor substrate, such as a silicon substrate. The substrate 10 may include various layers, including a conductive layer or an insulating layer formed on the semiconductor substrate. The substrate 10 may include various doping configurations according to design requirements known in the art. The substrate 10 may also include other semiconductors, such as germanium, silicon carbide (SiC), silicon germanium (SiGe), or diamond. In addition, the substrate 10 may include a compound semiconductor and / or an alloy semiconductor. Furthermore, the substrate 10 may optionally include an epitaxial layer, may be strained to improve performance, may include a silicon-on-insulator (SOI) structure, and / or have other suitable enhancement features.

[0076] Figure 1 1 is a top view of a unit cell 11 (i.e., a portion of a semiconductor substrate 10). As shown, parallel active regions 20 are separated from one another and extend in the X direction. Furthermore, parallel gate lines 30 are separated from one another and extend in the Y direction perpendicular to the X direction. The exemplary gate lines 30 are composed of a conductive material such as a metal and form a gate structure of the multi-gate device 100.

[0077] Further Figure 1 As shown, a cut region or trench is formed in a gate line 30 and filled with an insulator to form an insulating structure 40, which can isolate adjacent devices from one another, as described below. The terms "insulation", "isolation" and "dielectric" used in this disclosure are considered synonymous and are used in different examples for the sake of clarity.

[0078] The method disclosed herein is directed to the formation of an insulating structure 40, such as a continuous poly on diffusion edge (CPODE) structure 40, which separates a fin into two. In certain embodiments, a portion of a selected fin structure is removed and replaced with an insulating material.

[0079] For the purpose of the present disclosure, a "diffusion edge" may be equivalent to an active region edge, for example, an active region edge adjacent to an active region. Furthermore, the active region includes a region formed by a transistor structure (e.g., including a source, a drain, and a gate / channel structure). In some specific examples, the active region may be disposed between insulating regions. The CPODE process may provide an isolation region between adjacent active regions, so that adjacent transistors are formed by performing a dry etching process along the edge of the active region (e.g., at the boundary of adjacent active regions) to form a cutting region and fill the cutting region with a dielectric (e.g., silicon nitride (SiN)).

[0080] Prior to the CPODE process, the edge of the active region may include a wraparound gate (GAA) dummy structure having a gate stack and multiple channels (e.g., nanosheet channels). Each of the multiple channels may include a chemical oxide layer formed thereon, and a high-K dielectric / metal gate layer may be formed on the chemical oxide layer and between adjacent channels of the multiple channels. In addition, an inner spacer may be disposed between adjacent channels at the lateral ends of the multiple channels. In various specific examples, the source / drain epitaxial (epi) layer of the adjacent active region is disposed on one side of the GAA dummy structure (formed at the edge of the active region) so that the adjacent source / drain epitaxial layer contacts the inner spacer and the multiple channels of the GAA dummy structure.

[0081] In an embodiment of the present disclosure, a pre-CPODE process method is used, i.e., before the metal gate is formed. Furthermore, the metal cutting process used to pattern the metal gate line into a separate metal gate structure can also be used to cut the line end of the CPODE insulating structure. In particular, the replacement metal gate formation process includes forming a high-K gate dielectric as an outer layer of the metal gate structure in a trench, which is partially defined by the formed CPODE insulating structure. Therefore, a layer of high-K gate dielectric is formed on the end wall of the CPODE insulating structure. When this layer is located near the source / drain region, this layer can cause parasitic capacitance. As used in the present disclosure, the "source / drain region(s)" can represent the source region or the drain region individually or collectively according to the full text. Furthermore, the aforementioned layer can cause a shift in the threshold voltage. The process described in the present disclosure removes the high-K gate dielectric layer located on the end wall of the CPODE insulating structure.

[0082] See also Figure 2 , which illustrates a method 200 for manufacturing a semiconductor device 100 (e.g., a multi-gate device) using a CPODE process according to various embodiments. The method 200 is described below with reference to a GAA device having a channel region, wherein the channel region can be regarded as a nanosheet and can include various shapes (e.g., cylindrical, rod-shaped) and sizes. However, it should be understood that the aspects of the method 200 (including the disclosed CPODE process) can also be applied to other types of multi-gate devices without departing from the scope of the present disclosure. In some embodiments, the method 200 can be used to make the multi-gate device 100, as described above with reference to Figure 1Thus, one or more aspects described above with reference to the multi-gate device 100 may also be applied to the method 200. It should be understood that the method 200 includes features of complementary metal-oxide-semiconductor (CMOS) technology and is therefore only briefly described herein. Furthermore, additional steps may be performed before, after, and / or during the method 200.

[0083] The following reference Figures 3 to 12 The method 200 is described, which illustrates the semiconductor device 100 at various stages of processing according to the method 200 . Figures 3 to 7 and Figures 9 and 10 Provide a plane substantially parallel to the plane defined by the Y-axis and passing through Figure 1 FIG. 1 is a cross-sectional view of a semiconductor device 100 according to an embodiment of the present invention. Figure 8 yes Figure 7 Top view of the process stages. Fig.11 yes Fig.10 Top view of the component at various process stages.

[0084] The semiconductor device 100 may include various other devices and features, such as other types of devices (e.g., additional transistors, bipolar junction transistors, resistors, capacitors, inductors, diodes, fuses, static random access memory (SRAM) and / or other logic circuits, etc.), but is simplified for easier understanding of the novel aspects of the present disclosure. In some embodiments, the semiconductor device 100 includes a plurality of interconnected semiconductor elements (e.g., transistors), including p-type field effect transistors (PFETs), n-type field effect transistors (NFETs), etc. Furthermore, it should be noted that the process steps of the method 200 (including any descriptions with reference to the accompanying drawings) are for illustration only and are not intended to limit the specific statements of the following claims.

[0085] The method 200 begins at block S202 by providing a partially fabricated multi-gate device 100. Figure 3As a specific example, in one embodiment of block S202, method 200 forms a structure 12 (e.g., fin 12) on a substrate 10. Fin 12 extends in the X direction and is separated from one another in the Y direction perpendicular to the X direction. In some embodiments, substrate 10 may be a semiconductor substrate, such as a silicon substrate. Substrate 10 may include layers, which include a conductive layer or an insulating layer formed on a semiconductor substrate. According to design requirements known in the art, substrate 10 may include various doping configurations. Substrate 10 may also include other semiconductors, such as germanium, silicon carbide (SiC), silicon germanium (SiGe), or diamond. In addition, substrate 10 may include compound semiconductors and / or alloy semiconductors. Furthermore, substrate 10 may selectively include an epitaxial layer, may be strained to improve performance, may include a silicon-on-insulator (SOI) structure, and / or have other suitable enhancement features.

[0086] The fin 12 may include a nanosheet channel layer, which is collectively identified by reference numeral “15”, and an intervening sacrificial layer, which is collectively identified by reference numeral “16”. In some embodiments, the nanosheet channel layer 15 may include silicon (Si), and the sacrificial layer 16 may include silicon germanium (SiGe). However, in some embodiments, the nanosheet channel layer 15 may include other materials such as germanium, compound semiconductors such as silicon carbide, gallium arsenide, indium phosphide, indium phosphide, indium arsenide and / or indium antimonide, alloy semiconductors such as silicon germanium (SiGe), gallium arsenide phosphide (GaAsP), aluminum indium arsenide (AlInAs), aluminum gallium arsenide (AlGaAs), gallium indium arsenide (GaInAs), gallium indium phosphide (GaInP) and / or gallium indium arsenide phosphide (GaInAsP), or combinations thereof. For example, the nanosheet channel layer 15 may be epitaxially grown by a molecular beam epitaxy (MBE) process, a metalorganic chemical vapor deposition (MOCVD) process, and / or other suitable epitaxial growth processes.

[0087] In various embodiments, each fin 12 includes a substrate portion 13 formed from a substrate 10. It should be noted that when the fin 12 is illustrated as including three nanosheet channel layers 15, this is for illustrative purposes only and is not intended to be limiting of the specific statements of the claims. It should be understood that any number of nanosheet channel layers 15 may be formed, for example, the number of nanosheet channel layers 15 depends on the number of channel regions desired for a GAA device (e.g., device 100). In some embodiments, the number of nanosheet channel layers 15 is between 3 and 10.

[0088] Shallow trench isolation (STI) features 14 may also be formed to be inserted into the fins 12. In some embodiments, the shallow trench isolation features 14 include silicon dioxide (SiO2), silicon nitride, silicon oxynitride, fluorine-doped silicate glass (FSG), low-k dielectrics, combinations of the foregoing, and / or other suitable materials known in the art. In various embodiments, the dielectric layer used to form the shallow trench isolation features 14 may be formed by a chemical vapor deposition (CVD) process, a sub-atmospheric chemical vapor deposition (SACVD) process, a flowable CVD (FCVD) process, an atomic layer deposition (ALD) process, a physical vapor deposition (PVD) process, and / or other suitable processes.

[0089] Further Figure 3 As shown, the partially fabricated multi-gate device 100 further includes a sacrificial layer 17, such as a sacrificial gate structure 17 or a dummy gate structure 17 extending in the Y direction. The sacrificial gate structure 17 is separated from another in the X direction and is formed on a portion of the fin 12 that serves as a channel region. As shown, the sacrificial gate structure 17 may extend over a plurality of adjacent fins 12. The sacrificial gate structure 17 is directly located over the channel region of the GAA device to be formed and defines the channel region. Each of the sacrificial gate structures 17 may include a sacrificial gate dielectric layer and a sacrificial gate electrode on the sacrificial gate dielectric.

[0090] The sacrificial gate structure 17 is formed by first blanket depositing a sacrificial gate dielectric layer on the fin 12. Then, a sacrificial gate electrode layer is blanket deposited on the sacrificial gate dielectric layer and above the fin 12. The sacrificial gate dielectric layer comprises silicon oxide, silicon nitride, or a combination thereof. In some embodiments, the thickness of the sacrificial gate electrode layer is in the range of about 100 nm to about 200 nm. The sacrificial gate electrode layer comprises silicon, such as polysilicon or amorphous silicon. In some embodiments, the thickness of the sacrificial gate dielectric layer ranges from about 1 nm to about 5 nm. In some embodiments, the sacrificial gate structure 17 is planarized. The sacrificial gate dielectric layer and the sacrificial gate electrode layer are deposited by chemical vapor deposition (including low pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD)), physical vapor deposition, atomic layer deposition, or other suitable processes. The sacrificial gate dielectric layer and the sacrificial gate electrode layer may be masked and patterned to form the sacrificial gate structure 17.

[0091] As shown, a mask layer 18 is formed on the sacrificial gate structure 17. The mask layer 18 may include a mask layer such as silicon oxide and a mask layer such as silicon nitride.

[0092] Please also see Figure 2 and Figure 4 , the method 200 may proceed to block S204 to perform a CPODE etching process. In particular, before etching to remove a portion of the sacrificial gate structure 17, a mask layer is patterned on the selected fin 12' and the selected portion of the fin 12' is removed. Thus, a trench 50 is formed. In other words, the method 200 includes removing a portion of at least one fin 12' to form the trench 50. The trench 50 extends across the fin 12, i.e., in the Y direction.

[0093] Please also see Figure 2 and Figure 5 , method 200 may proceed to block S206 to form a CPODE insulating structure 60 in the trench. CPODE insulating structure 60 may include an outer layer 58 conformally deposited along the wall of the trench and a filling material 59 deposited on the outer layer 58. For example, layer 58 may be silicon nitride, and filling material 59 may be silicon oxide.

[0094] The CPODE insulating structure 60 extends from the first end wall 61 to the second end wall 62 in the Y direction. Therefore, each of the end wall 61 and the end wall 62 extends in the X direction. Figure 5As shown, the adjacent portion 17 ′ of the sacrificial gate structure 17 abuts the end wall 61 and the end wall 62 of the CPODE insulating structure 60 .

[0095] Therefore, method 200 forms an insulating material (CPODE insulating structure 60) in trench 50, and the insulating material (CPODE insulating structure 60) terminates at the first end wall 61, terminates at the second end wall 62, and extends from the first end wall 61 to the second end wall 62 in the Y direction.

[0096] Please also see Figure 2 and Figure 6 The method 200 may proceed to block S208 to remove the sacrificial gate structure 17 to form a gate hole 70. As shown, the gate hole 70 is partially defined by the end wall 61 and the end wall 62 of the CPODE insulating structure 60. Furthermore, the sacrificial layer 16 is removed, leaving the nanosheet channel layer 15 separated from the fin 12.

[0097] Please also see Figure 2 and Figure 7 The method 200 may proceed to block S210 to form a metal gate 80 in the gate hole 70. In particular, the method 200 may include lining the gate hole 70 with a liner 81. For example, the high-K gate dielectric layer 81 may be deposited along the end walls 61 and 62 extending in the X direction, and along the side walls of the hole extending in the Y direction (not shown). Figure 7 ), deposited on the hole bottom 71, and deposited around the nanosheet channel layer 15. Therefore, the liner 81 or high-K gate dielectric layer 81 includes an end portion 811 located on the end wall 61 of the CPODE insulating structure 60 and an end portion 812 located on the end wall 62 of the CPODE insulating structure 60. Each of the end portion 811 and the end portion 812 extends in the X direction.

[0098] The high-K gate dielectric used and described in the present disclosure includes a dielectric material having a high dielectric constant, such as a dielectric constant greater than that of thermal silicon oxide (about 3.9). An exemplary high-K gate dielectric layer 81 may include a high-K dielectric material, such as hafnium oxide (HfO2). In addition, the high-K gate dielectric layer 81 may include other high-K dielectric materials, such as titanium dioxide (TiO2), hafnium zirconium oxide (HfZrO), tantalum trioxide (Ta2O3), hafnium silicate (HfSiO4), zirconium oxide (ZrO2), silicon zirconium oxide (ZrSiO2), lanthanum oxide (LaO), aluminum oxide (AlO), titanium oxide (TiO), tantalum pentoxide (Ta2O5), yttrium oxide (Y2O3), strontium titanate (SrTiO3, STO), Barium (BaTiO3, BTO), barium zirconium oxide (BaZrO), hafnium lanthanum oxide (HfLaO), hafnium silicon oxide (HfSiO), lanthanum silicon oxide (LaSiO), aluminum silicon oxide (AlSiO), hafnium tantalum oxide (HfTaO), hafnium titanium oxide (HfTiO), barium strontium titanate ((Ba, Sr)TiO3, BST), aluminum oxide (Al2O3), silicon nitride (Si3N4), silicon oxynitride (SiON), a combination of the foregoing or other suitable materials. The high-K dielectric layer 81 may be formed by atomic layer deposition, physical vapor deposition, chemical vapor deposition, oxidation and / or other suitable methods.

[0099] The formation of the metal gate 80 also includes filling the gate hole 70 with a filling material 82. The filling material 82 may include multiple layers of metal, metal alloy, or metal silicide. The filling material 82 may include a single layer or alternating multiple layers, such as a metal layer with a selected work function to improve device performance (work function metal layer), a liner, a wetting layer, an adhesion layer, various combinations of metal alloys or metal silicides. For example, the filling material 82 may include titanium (Ti), silver (Ag), aluminum (Al), titanium aluminum nitride (TiAlN), tantalum carbide (TaC), tantalum carbonitride (TaCN), tantalum silicon nitride (TaSiN), manganese (Mn), zirconium (Zr), titanium nitride (TiN), tantalum nitride (TaN), ruthenium (Ru), molybdenum (Mo), aluminum (Al), tungsten nitride (WN), copper (Cu), tungsten (W), rhenium (Re), iridium (Ir), cobalt (Co), nickel (Ni), other suitable metal materials, or combinations thereof. In various embodiments, the fill material 82 may be formed by atomic layer deposition, physical vapor deposition, chemical vapor deposition, electron beam evaporation, or other suitable processes. Furthermore, the fill material 82 may be formed to separate the N-type transistor and the P-type transistor, which may utilize different metal layers. In addition, the fill material 82 may provide an N-type work function or a P-type work function, may serve as a transistor gate electrode, and in at least some embodiments, the fill material 82 may include a polysilicon layer. In some embodiments, the fill material 82 may include a selectively grown tungsten (W) and / or fluorine-free tungsten (FFW) layer.

[0100] like Figure 7 As shown, a chemical mechanical planarization (CMP) process may be performed to define a metal gate 80 in the gate hole 70 .

[0101] In summary, in block S210, method 200 forms a first element (metal gate 80) adjacent to the first end wall 61, wherein a first end portion 811 of the first element (metal gate 80) contacts the first end wall 61, and forms a second element (metal gate 80) adjacent to the second end wall 62, wherein a second end portion 812 of the second element (metal gate 80) contacts the second end wall 62.

[0102] Please refer to Figure 8 , which is shown as Figure 7 A top view of a partially fabricated device 100 is shown, wherein Figure 7 The cross-sectional view is along Figure 8 Cut it along line 7-7.

[0103] Figure 8The metal gate 80 is shown to be formed as a metal gate line 180 extending in the Y direction, which includes a metal gate line 181 and an adjacent metal gate line 182. In each metal gate line 180, a side portion 819 of the high-K dielectric layer 81 forms a gate line sidewall 189 that also extends in the Y direction. As shown in the figure, the end portion 811 and the end portion 812 of the high-K dielectric layer 81 of the metal gate 80 are located at the end wall 61 and the end wall 62 of the CPODE insulating structure 60, that is, the end of the line. The end portion 811 and the end portion 812 extend in the X direction. It is understandable that when located close to the source / drain region 90, the end portion 811 and the end portion 812 of the high-K dielectric layer 81 will cause a shift in parasitic capacitance and / or threshold voltage. Therefore, the embodiment of the present disclosure removes the end portion 811 and the end portion 812 of the high-K dielectric layer 81.

[0104] like Figure 8 As shown, the metal gate 80 is formed in the gate hole 70. The gate hole 70 is formed in the gate line 181, and the hole 70 is defined by the end wall 61 of the insulating structure 60, the first side wall 78 extending outward from the end wall 61, and the second side wall 79 extending outward from the end wall 61.

[0105] In summary, after etching the selected portion of the fin 12, the trench 50 is located between the first remaining structure 12 or fin 12 in the device area 102 and the second remaining structure 12 or fin 12 in the device area 104, and the method 200 includes forming a first metal gate 80 on the first remaining structure 12 in the device area 102, and forming a second metal gate 80 on the second remaining structure 12 in the device area 104. As shown, the first metal gate 80 in the device area 102 and the second metal gate 80 in the device area 104 are aligned with the gate line 181 extending in the Y direction.

[0106] Please also see Figure 2 and Fig. 9, the method 200 may proceed to block S212 to remove the end portion 811 and the end portion 812 of the high-K dielectric layer 81. In particular, a mask 91 is formed and patterned on the partially fabricated device 100. Then, an etching process is performed to remove the end portion 811 and the end portion 812 of the high-K dielectric layer 81. The etching process may remove the end wall 61 and the end wall 62 of the CPODE insulating structure 60. Furthermore, the etching process may remove the portion of the metal fill material 82 adjacent to the end portion 811 and the end portion 812 of the high-K dielectric layer 81. At the same time, the etching process may remove the portion of the shallow trench isolation feature 14 that was previously located under the end portion 811 and the end portion 812 of the high-K dielectric layer 81. Due to the removal of the end portion 811 and the end portion 812 of the high-K dielectric layer 81, an opening 95 is formed. The opening 95 may extend to the shallow trench isolation feature 14.

[0107] In summary, in block S212 , the method 200 includes removing the first end portion 811 to form the first opening 95 , and removing the second end portion 812 to form the second opening 95 .

[0108] Please also see Figure 8 and Fig. 9 It should be noted that performing an etching process to remove the end portion 811 and the end portion 812 of the high-K dielectric layer 81 also includes removing a portion of the adjacent gate line 180. In particular, the etching process to remove the end portion 811 and the end portion 812 of the high-K dielectric layer 81 is part of the metal removal process to define the metal gate 80 to form the gate line 180.

[0109] Please also see Figure 2 and Fig.10 The method 200 may proceed to block S214 to form an isolation structure 99 in the opening 95. The end isolation structure 99 may be a cut metal isolation structure 99. In an exemplary embodiment, the end isolation structure 99 may include a single layer or multiple layers formed of silicon oxide and / or silicon nitride.

[0110] Next, the method 200 may continue with further processes at block S216 , such as performing middle end of line (MEOL) and back end of line (BEOL).

[0111] Please refer to Fig.11 , shown as Fig.10 A top view of the device 100, wherein Fig.10 The cross-sectional view is along Fig.11 Cut it along line 9-9. Figure 10 to Figure 11As shown, the end portion 811 and the end portion 812 of the high-K dielectric layer 81 are removed and replaced by the end isolation structure 99. The end isolation structure 99 extends across a plurality of gate lines 180 (including gate line 181 and gate line 182) and separates adjacent gate structures 80, such as gate structure 88 and gate structure 89, from one another in the gate line 180. The gate structure 88 and the gate structure 89 may be included in adjacent device regions 101 and 102. Therefore, the device regions 101 and 102 are separated from one another in the Y direction. Similarly, the CPODE insulation structure 60 isolates the adjacent device regions 101 and 103 from one another in the X direction.

[0112] Fig.11 The second gate line 182 extending in the Y direction is shown to be separated from the first gate line 181 in the X direction; the end isolation structure 99 formed in the first opening 95 is formed to extend through the first gate line 181 and the second gate line 182 to separate the device area 101 and the device area 102; and the end isolation structure 99 formed in the first opening 95 is formed to extend through the first gate line 181 and the second gate line 182 to separate the device area 101 and the device area 104.

[0113] like Fig.11 As shown, after the end portion 811 of the high-K dielectric layer 81 is removed, the high-K dielectric layer 81 remains on the first sidewall 78 and the second sidewall 79 of the gate hole 70 .

[0114] Furthermore, the high-K gate dielectric layer 81 is not located between the metal layer 82 and the isolation structure 99. In other words, the metal layer 82 directly contacts the isolation structure 99.

[0115] like Fig.10 and Fig.11 , method 200 manufactures a semiconductor device 100, which includes a semiconductor substrate 10; a first device region 101 on the semiconductor substrate 10, and includes a first metal gate 89 extending in the Y direction to a first end 891; a second device region 103 on the semiconductor substrate 10, and includes a second metal gate 87 extending in the Y direction to a first end 871 and separated from the first device region 101; an insulating structure 60 adjacent to the first device region 101 and the second device region 103 and located between the first device region 101 and the second device region 103, wherein the insulating structure 60 extends in the Y direction to a first end 601; and an isolation structure 99 extending in the X direction, wherein the isolation structure 99 is adjacent to the first end 891 of the first metal gate 89, adjacent to the first end 601 of the insulating structure 60, and adjacent to the first end 871 of the second metal gate 87.

[0116] As further shown in the figure, the first metal gate 89 extends from the second end 892 to the first end 891 in the Y direction; the second metal gate 87 extends from the second end 872 to the first end 871 in the Y direction; the insulating structure 60 extends from the second end 602 to the first end 601 in the Y direction; and the device 100 also includes an isolation structure 99 extending in the X direction, wherein the isolation structure 99 is adjacent to the second end 892 of the first metal gate 89, the second end 602 of the insulating structure 60, and the second end 872 of the second metal gate 87.

[0117] In some embodiments, the device 100 further includes a third device region 102 on the semiconductor substrate 10 , which includes a third metal gate 86 extending to a first end 861 in the Y direction, wherein the third metal gate 86 is colinear with the insulating structure 60 , and the isolation structure 99 is adjacent to the first end 861 of the third metal gate 86 .

[0118] In some embodiments, the device 100 further includes a fourth device region 104 on the semiconductor substrate 10 , which includes a fourth metal gate 85 extending to a first end 851 in the Y direction, wherein the fourth metal gate 85 is colinear with the insulating structure 60 , and the isolation structure 99 is adjacent to the first end 851 of the fourth metal gate 85 .

[0119] Due to the process and structure described in the present disclosure, embodiments are provided with reduced or decreased parasitic capacitance and no threshold voltage shift due to the high-K dielectric on the end walls of the CPODE insulation structure.

[0120] Please refer to Fig.12 and Fig.13 , providing a transmission electron microscope (TEM) image of a portion of the semiconductor device 100 .

[0121] exist Fig.12In the embodiment, after the cutting metal etching process, the device 100 has a maximum unit width "a" at the hard mask curtain, which is 156.9nm on average, 157.1nm on maximum, and 156.5nm on minimum; a maximum unit width "b" at the hard mask curtain, which is 103.6nm on average, 104.6nm on maximum, and 102.7nm on minimum; a maximum unit width "c" at the uppermost nanosheet, which is 152.2nm on average, 152.6nm on maximum, and 151.4nm on minimum; a maximum unit width "d" at the uppermost nanosheet, which is 107.7nm on average, 109nm on maximum, and 106.9nm on minimum; and ... There is a maximum unit width "e", which averages 146.5nm, has a maximum value of 147.1nm and a minimum value of 146.0nm; there is a maximum unit width "f" on the upper surface of the fin (i.e., on the platform), which averages 113.1nm, has a maximum value of 113.9nm and a minimum value of 111.8nm; the depth "g" of the cutting metal etching opening 95 averages 126.7nm, has a maximum value of 133.2nm and a minimum value of 121.1nm; the depth "h" of the CPODE etching trench 50 averages 173.0nm, has a maximum value of 187.4nm and a minimum value of 151.8nm; and the gate height "i" averages 23.5nm, has a maximum value of 24.8nm and a minimum value of 21.4nm.

[0122] exist Fig.13 In the figure, the device 100 has an average critical dimension "j" of the cutting metal area on the mask of 26.6nm, a maximum value of 27.2nm and a minimum value of 26.0nm; the average critical dimension "k" of the cutting metal area on the top nanosheet is 22.2nm, a maximum value of 22.8nm and a minimum value of 21.2nm; the average critical dimension "l" of the cutting metal area on the upper surface of the fin (i.e., on the platform) is 16.7nm, a maximum value of 17.7nm and a minimum value of 16.0nm; the average total height "m" of the nanosheet is 44.9nm, a maximum value of 46.5nm and a minimum value of 43.6nm; the average cutting metal area angle "n" of the top nanosheet is 46.6°, a maximum value of 49.5° and a minimum value of 43.2°; the average cutting metal area angle "o" on the upper surface of the fin (i.e., on the platform) is 69.6°, a maximum value of 71.0° and a minimum value of 67.9°.

[0123] In some embodiments, the maximum overlay offset for the end of the CPODE line is 4 nm. Therefore, the skiving metal gate etch process will compensate for any overlay offset to ensure that the end portion 811 and the end portion 812 are removed.

[0124] Therefore, one embodiment of the present disclosure describes a method, which includes forming a fin structure on a semiconductor material; forming a sacrificial layer on the semiconductor material; removing at least a portion of the fin structure and an upper portion of the sacrificial layer to form a trench, wherein the upper portion of the sacrificial layer is located on the aforementioned portion of the fin structure; forming an insulating structure in the trench, wherein an adjacent portion of the sacrificial layer is adjacent to an end wall of the insulating structure; removing an adjacent portion of the aforementioned sacrificial layer to form a hole, wherein the hole is partially defined by the end wall of the insulating structure; lining the hole with a pad, wherein an end portion of the pad is located on the end wall of the insulating structure; filling the hole with a filling material; removing the end portion of the pad to form an opening; and forming an end isolation structure in the opening.

[0125] In some embodiments of the above method, the liner is a high-K gate dielectric layer, and the filling material is a metal gate material.

[0126] In some embodiments of the above method, the sacrificial layer is a sacrificial gate layer.

[0127] In some embodiments of the above method, the step of removing the end portion of the liner to form the opening includes removing a portion of a filling material and an end wall of an insulating structure.

[0128] In some embodiments of the above method, the steps of lining the hole with a pad and filling the hole with a filling material include forming a first gate pad, wherein a second gate pad is formed parallel to the first gate pad; performing a metal cutting process to remove an end portion of the pad to form an opening; and the metal cutting process also removes a portion of the second gate pad to form an opening.

[0129] In some embodiments of the above method, the insulating structure is a continuous poly on diffusion edge (CPODE) structure, and the terminal isolation structure is a cut metal isolation structure.

[0130] In some embodiments of the above method, the hole is defined by an end wall of an insulating structure, a first side wall extending from the end wall, and a second side wall extending from the end wall; lining the hole with a liner includes forming a liner on the end wall, the first side wall, and the second side wall; and after removing the end portion of the liner, the liner remains on the first side wall and the second side wall.

[0131] In another embodiment of the present disclosure, a method for manufacturing a semiconductor device is provided, which includes forming a plurality of structures on a semiconductor substrate, wherein the aforementioned structures extend in an X direction, and one of the structures is separated from another of the structures in a Y direction perpendicular to the X direction; removing a portion of at least one of the aforementioned structures to form a trench; forming an insulating material in the trench, wherein the insulating material stops at a first end wall, stops at a second end wall, and extends from the first end wall to the second end wall in the Y direction; forming a first element adjacent to the first end wall, wherein a first end portion of the first element contacts the first end wall; forming a second element adjacent to the second end wall, wherein a second end portion of the second element contacts the second end wall; and removing the first end portion to form a first opening, and removing the second end portion to form a second opening.

[0132] In some embodiments, the method further includes forming a first insulating region in the first opening; and forming a second insulating region in the second opening.

[0133] In some embodiments, the first end portion is a high-K dielectric and the second end portion is a high-K dielectric.

[0134] In some embodiments, the method further includes forming a shallow trench isolation layer on the semiconductor substrate and between the structures, wherein the first element is located on the shallow trench isolation layer and the second element is located on the shallow trench isolation layer; the step of removing the first end portion to form a first opening includes etching into the shallow trench isolation layer; and the step of removing the second end portion to form a second opening includes etching into the shallow trench isolation layer.

[0135] In some embodiments, a portion of at least one of the above-mentioned structures is located between a first remaining structure and a second remaining structure; the step of forming a first element includes forming a first metal gate on the first remaining structure; and the step of forming a second element includes forming a second metal gate on the second remaining structure, wherein the first metal gate and the second metal gate are aligned with a first gate pad extending in the Y direction.

[0136] In some embodiments, the method further includes forming a second gate pad, wherein the second gate pad extends in the Y direction and is separated from the first gate pad in the X direction, the first opening extends through the second gate pad, the second opening extends through the second gate pad, and the second gate structure is defined between the first opening and the second opening.

[0137] In some embodiments, the structure includes a plurality of fins; the method further includes forming a sacrificial gate on the fins; the step of removing a portion of at least one of the structures to form a trench includes etching a selected portion of at least one of the fins and a portion of the sacrificial gate, wherein the portion of the sacrificial gate is on the selected portion; the method further includes removing an adjacent portion of the sacrificial structure after forming an insulating material in the trench to form a gate hole; the first element is a first metal gate; and the step of forming the first element adjacent to the first end wall includes forming the first metal gate in the gate hole.

[0138] In another embodiment of the present disclosure, a semiconductor device includes a semiconductor substrate; a first device region on the semiconductor substrate, wherein the first device region includes a first metal gate, and the first metal gate extends in the Y direction to a first end of the first metal gate; a second device region on the semiconductor substrate and separated from the first device region in the X direction, wherein the X direction is perpendicular to the Y direction; an insulating structure adjacent to the first device region and the second device region and located between the first device region and the second device region, wherein the insulating structure extends in the Y direction to a first end of the insulating structure; and a dielectric structure extending in the X direction, wherein the dielectric structure is adjacent to a first end of the first metal gate and a first end of the insulating structure.

[0139] In some embodiments of the semiconductor device, the second device region includes a second metal gate extending in the Y direction to a first end, and the dielectric structure is adjacent to the first end of the first metal gate, the first end of the insulating structure, and the first end of the second metal gate.

[0140] In some embodiments of the semiconductor device, the first metal gate extends from the second end to the first end in the Y direction; the second metal gate extends from the second end to the first end in the Y direction; the insulating structure extends from the second end to the first end in the Y direction; the dielectric structure is a first dielectric structure, and the semiconductor device further includes a second dielectric structure extending in the X direction, and the second dielectric structure is adjacent to the second end of the first metal gate, the second end of the insulating structure and the second end of the second metal gate.

[0141] In some embodiments of the semiconductor device, the semiconductor device further includes a third device region on the semiconductor substrate, wherein the third device region includes a third metal gate, the third metal gate extends to the first end in the Y direction, the third metal gate is colinear with the insulating structure, and the dielectric structure is adjacent to the first end of the third metal gate.

[0142] In some embodiments of the semiconductor device, the third metal gate includes a high-K gate dielectric and a metal layer, and the high-K gate dielectric is not located between the metal layer and the dielectric structure.

[0143] In some embodiments of the semiconductor device, the third metal gate includes a high-K gate dielectric and a metal layer, and the metal layer directly contacts the dielectric structure.

[0144] In another embodiment of the present disclosure, a semiconductor device includes a semiconductor substrate; a first device region on the semiconductor substrate, wherein the first device region includes a first metal gate, and the first metal gate extends from the second end of the first metal gate to the first end of the first metal gate in the Y direction; a second device region on the semiconductor substrate and separated from the first device region in the X direction, wherein the X direction is perpendicular to the Y direction, the second device region includes a second metal gate, and the second metal gate extends from the second end of the second metal gate to the first end of the second metal gate in the Y direction; a third device region on the semiconductor substrate, wherein the third device region includes a third metal gate, and the third metal gate extends to the first end of the third metal gate in the Y direction; an insulating structure adjacent to the first device region and the second device region and located between the first device region and the second device region, wherein the third metal gate is collinear with the insulating structure, and the insulating structure extends from the second end of the insulating structure to the first end of the insulating structure in the Y direction; and a dielectric structure extending in the X direction, wherein the dielectric structure is adjacent to the first end of the first metal gate and the first end of the insulating structure.

[0145] In some embodiments of the semiconductor device, the third metal gate includes a high-K gate dielectric and a metal layer, and the high-K gate dielectric is not located between the metal layer and the dielectric structure.

[0146] In some embodiments of the semiconductor device, the semiconductor device further includes a fourth device region on the semiconductor substrate, wherein the fourth device region includes a fourth metal gate, the fourth metal gate extends in the Y direction to a first end of the fourth metal gate, and the fourth metal gate is colinear with the insulating structure.

[0147] In yet another embodiment of the present disclosure, a semiconductor device includes a semiconductor substrate; a first device region on the semiconductor substrate, wherein the first device region includes a first metal gate and the first metal gate extends from a second end of the first metal gate to a first end of the first metal gate in a Y direction; a second device region on the semiconductor substrate and separated from the first device region in an X direction, wherein the X direction is perpendicular to the Y direction, the second device region includes a second metal gate and the second metal gate extends from a second end of the second metal gate to a first end of the second metal gate in the Y direction; an insulating structure adjacent to the first device region and the second device region and located between the first device region and the second device region, wherein the insulating structure extends from a second end of the insulating structure to a first end of the insulating structure in the Y direction; and a first dielectric structure extending in the X direction, wherein the first dielectric structure is adjacent to a first end of the first metal gate, a first end of the second metal gate, and a first end of the insulating structure; and a second dielectric structure extending in the X direction, wherein the second dielectric structure is adjacent to a second end of the first metal gate, a second end of the insulating structure, and a second end of the second metal gate.

[0148] The above summarizes the features of many embodiments, so that those with ordinary knowledge in the art can better understand the aspects of the present disclosure. Those with ordinary knowledge in the art should understand that other processes and structures can be designed or modified based on the present disclosure to achieve the same purpose and / or achieve the same advantages as the embodiments described. Those with ordinary knowledge in the art should also understand that equivalent structures do not deviate from the spirit and scope of the present disclosure, and various changes, substitutions and modifications can be made without departing from the spirit and scope of the present disclosure.

Claims

1. A semiconductor device, characterized in that: Include: a semiconductor substrate; a first device region on the semiconductor substrate, wherein the first device region comprises a first metal gate, and the first metal gate extends in the Y direction to a first end of the first metal gate; a second device region on the semiconductor substrate and separated from the first device region in an X direction, wherein the X direction is perpendicular to the Y direction; an insulating structure adjacent to the first device region and the second device region and located between the first device region and the second device region, wherein the insulating structure extends in the Y direction to a first end of the insulating structure; and A dielectric structure extends in the X direction, wherein the dielectric structure is adjacent to the first end of the first metal gate and the first end of the insulating structure.

2. The semiconductor device according to claim 1, wherein The second device region includes a second metal gate extending in the Y direction to a first end of the second metal gate, and the dielectric structure is adjacent to the first end of the first metal gate, the first end of the insulating structure and the first end of the second metal gate.

3. The semiconductor device according to claim 2, wherein: in The first metal gate extends from a second end of the first metal gate to the first end of the first metal gate in the Y direction; The second metal gate extends from a second end of the second metal gate to the first end of the second metal gate in the Y direction; The insulating structure extends from a second end of the insulating structure to the first end of the insulating structure in the Y direction; The dielectric structure is a first dielectric structure. The semiconductor device further comprises: A second dielectric structure extends in the X direction, and the second dielectric structure is adjacent to the second end of the first metal gate, the second end of the insulation structure, and the second end of the second metal gate.

4. The semiconductor device according to claim 1, wherein: Also includes: A third device region is on the semiconductor substrate, wherein the third device region includes a third metal gate, the third metal gate extends in the Y direction to a first end of the third metal gate, the third metal gate is colinear with the insulating structure, and the dielectric structure is adjacent to the first end of the third metal gate.

5. The semiconductor device according to claim 4, wherein: The third metal gate includes a high-K gate dielectric and a metal layer, and the high-K gate dielectric is not located between the metal layer and the dielectric structure.

6. The semiconductor device according to claim 4, wherein: The third metal gate includes a high-K gate dielectric and a metal layer, and the metal layer directly contacts the dielectric structure.

7. A semiconductor device, characterized in that: Include: a semiconductor substrate; a first device region on the semiconductor substrate, wherein the first device region comprises a first metal gate, and the first metal gate extends from a second end of the first metal gate to a first end of the first metal gate in the Y direction; a second device region on the semiconductor substrate and separated from the first device region in an X direction, wherein the X direction is perpendicular to the Y direction, the second device region comprising a second metal gate extending from a second end of the second metal gate to the first end of the second metal gate in the Y direction; a third device region on the semiconductor substrate, wherein the third device region comprises a third metal gate extending in the Y direction to a first end of the third metal gate; an insulating structure adjacent to the first device region and the second device region and located between the first device region and the second device region, wherein the third metal gate is colinear with the insulating structure, and the insulating structure extends from a second end of the insulating structure to a first end of the insulating structure in the Y direction; and A dielectric structure extends in the X direction, wherein the dielectric structure is adjacent to the first end of the first metal gate and the first end of the insulating structure.

8. The semiconductor device according to claim 7, wherein: The third metal gate includes a high-K gate dielectric and a metal layer, and the high-K gate dielectric is not located between the metal layer and the dielectric structure.

9. The semiconductor device according to claim 7, wherein: Also includes: A fourth device region is on the semiconductor substrate, wherein the fourth device region includes a fourth metal gate, the fourth metal gate extends in the Y direction to a first end of the fourth metal gate, and the fourth metal gate is colinear with the insulating structure.

10. A semiconductor device, characterized in that: Include: a semiconductor substrate; a first device region on the semiconductor substrate, wherein the first device region comprises a first metal gate, and the first metal gate extends from a second end of the first metal gate to a first end of the first metal gate in the Y direction; a second device region on the semiconductor substrate and separated from the first device region in an X direction, wherein the X direction is perpendicular to the Y direction, the second device region comprising a second metal gate, and the second metal gate extends from a second end of the second metal gate to a first end of the second metal gate in the Y direction; an insulating structure adjacent to the first device region and the second device region and located between the first device region and the second device region, wherein the insulating structure extends from a second end of the insulating structure to a first end of the insulating structure in the Y direction; a first dielectric structure extending in the X direction, wherein the first dielectric structure is adjacent to the first end of the first metal gate, the first end of the second metal gate, and the first end of the insulating structure; and A second dielectric structure extends in the X direction, wherein the second dielectric structure is adjacent to the second end of the first metal gate, the second end of the insulating structure, and the second end of the second metal gate.

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